A semiconductor device includes a semiconductor substrate, a surface of which is provided with: a source region having a first conductivity type is formed in a body region having a second conductivity type opposite to the first conductivity type; a main electrode connected to the source region and the body region; and a gate electrode, to which a voltage for controlling a current flowing through the main electrode is applied, and the semiconductor device includes: a recess formed in the surface of the semiconductor substrate, wherein the source region is exposed on an inner surface of the recess and the main electrode is connected to the source region at the inner surface of the recess.

Claims

6 · 1 independent · depth 3

6 granted claims

›1.independentA semiconductor device comprising:na semiconductor substrate, a surface of the semiconductor substrate provided with:na source region having a first c…+5

›2.↳ 1The semiconductor device according to claim 1,nwherein a body-region-connecting region to which the body region and the main electrode are connected i…d2+2

›5.↳ 1The semiconductor device according to claim 1,nwherein a body-region-connecting region to which the body region and the main electrode are connected i…d2

›6.↳ 1The semiconductor device according to claim 1,nwherein the main electrode and at least one of the source region and the body region are connected to e…d2

Classifications

7 codes

IPC · International Patent Classification

Section H — Electricity

H01L27/108
H01L31/119
H01L29/76
H01L29/78
H01L29/417
H01L29/45
H01L29/94

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Pendency

1.0 y

355 days filing → grant

Office actions

non-final + final

Responses

no RCE

Examiner

Hoai V Pham

art unit 2892 · TC 2800

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Citations: 5 back · 0 forward

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20150091082 A1	2 Apr 2015

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