The invention is directed to firm bonding between semiconductor dies etc bonded to a lead frame and wire-bonding portions of the lead frame by ultrasonic Al wire bonding, and the prevention of shortcircuit between the semiconductor dies etc due to a remaining portion of the outer frame of the lead frame after the outer frame is cut. By extending the wire-bonding portion etc on the lead frame in a wire-bonding direction and connecting the wire-bonding portion etc to the outer frame of the lead frame through a connection lead etc, the ultrasonic vibration force in the ultrasonic Al wire bonding is prevented from dispersing and the Al wire and the wire-bonding portion etc are firmly bonded. The outer frame is cut after a resin sealing process is completed. Even when a portion of the outer frame remains on the side surface of the resin package, connection between the connection lead etc and other hanging lead etc are prevented by providing a notch etc in the outer frame between the connection lead etc and the hanging lead etc.

Claims

20 · 3 independent · depth 4

20 granted claims

›1.independentA method of making a semiconductor device, the method comprising:nproviding a lead frame, the lead frame comprising:nan internal region comprising an …+9

›2.↳ 1The method of claim 1, wherein the internal region comprises two or more islands.d2

›3.↳ 1The method of claim 1, wherein cutting the lead frame forms two or more semiconductor devices.d2

›4.↳ 1The method of claim 1, wherein electrically connecting the semiconductor die and the lead frame comprises wire-bonding the semiconductor die to a wire…d2+3

›8.↳ 1The method of claim 1, wherein substantially all of the two connection portions that have the notch formed in-between are sealed in the encapsulating …d2

›9.↳ 1The method of claim 1, wherein two or more semiconductor dies are die-bonded to different portions of the internal region of the lead frame.d2

›10.↳ 1The method of claim 1, wherein the two or more connecting portions each connect different islands in the internal region to the outer frame, and where…d2

›11.independentA method of making a semiconductor device, the method comprising:nproviding an assembly, the assembly comprising:nan encapsulating resin;a lead frame …+5

›12.↳ 11The method of claim 11, wherein cutting the lead frame forms two or more semiconductor devices.d2

›13.↳ 11The method of claim 11, wherein the internal region of the lead frame comprises a wire-bonding portion, a first connection portion extending in a firs…d2+1

›15.↳ 11The method of claim 11, wherein the internal region of the lead frame comprises a wire-bonding portion, a first connection portion extending in a firs…d2

›16.↳ 11The method of claim 11, wherein the assembly comprises two or more semiconductor dies, wherein each of the semiconductor dies are disposed on differen…d2

›17.independentA method of making a semiconductor device, the method comprising:nproviding a lead frame, the lead frame comprising:nan internal region comprising a f…+3

Classifications

7 codes

IPC · International Patent Classification

Section B — Performing operations; transporting

B23K20/00
B23K20/10

Section H — Electricity

H01L21/00
H01L21/82
H01L23/495
H01L21/56
H01L23/00

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Pendency

1.5 y

565 days filing → grant

Office actions

non-final + final

Responses

no RCE

Examiner

Ajay K Arora

art unit 2892 · TC 2800

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Citations: 19 back · 0 forward

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20140179063 A1	26 Jun 2014

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