Data is written to cells of a resistance-based, non-volatile memory. An activity metric is tracked since the writing of the data to the cells. In response to the activity metric satisfying a threshold, a bias signal is applied to the cells to reverse a resistance shift of the cells.

Claims

20 · 3 independent · depth 2

20 granted claims

›1.independentA method comprising:nwriting data to cells of a resistance-based, non-volatile memory;tracking an activity metric since the writing of the data to the…+8

›2.↳ 1The method of claim 1, wherein the activity metric comprises at least one of an elapsed time, a temperature, and a number of read operations targeted …d2

›3.↳ 1The method of claim 1, wherein a polarity of the bias signal is the reverse of a programming signal polarity used on the cells.d2

›4.↳ 1The method of claim 1, wherein the cells comprise phase change memory cells, and wherein the bias results in keeping the cells in a crystalline state.d2

›5.↳ 1The method of claim 1, wherein the cells comprise resistive random access memory (RRAM) cells, and wherein the bias results in reversing an ion migrat…d2

›6.↳ 1The method of claim 1, further comprising tracking an age of the cells, and wherein at least one of the threshold and an amount of bias signal is modi…d2

›7.↳ 1The method of claim 1, wherein the tracking of the elapsed time and the applying of the bias signal is performed repeatedly over a life of the resista…d2

›8.↳ 1The method of claim 1, further comprising:ndetermining resistance shift data from a reference cell of the resistance-based, non-volatile memory that s…d2

›19.↳ 1The method of claim 1, further comprising, in response to the second activity metric of the neighboring cells, applying a second bias signal to the ne…d2

›9.independentAn apparatus comprising:na controller configured to read from and write to in a resistance-based, non-volatile memory unit, the controller configured …+7

›10.↳ 9The apparatus of claim 9, wherein the activity metric comprises at least one of an elapsed time, a temperature, and a number of read operations target…d2

›11.↳ 9The apparatus of claim 9, wherein a polarity of the bias signal is the reverse of a programming signal polarity used on the cells.d2

›12.↳ 9The apparatus of claim 9, wherein the cells comprise phase change memory cells, and wherein the bias results in keeping the cells in a crystalline sta…d2

›13.↳ 9The apparatus of claim 9, wherein the cells comprise resistive random access memory (RRAM) cells, and wherein the bias results in reversing an ion mig…d2

›14.↳ 9The apparatus of claim 9, wherein the controller further performs tracking an age of the cells, and wherein at least one of the threshold and an amoun…d2

›15.↳ 9The apparatus of claim 9, wherein the controller further performs:ndetermining resistance shift data from a reference cell of the resistance-based, no…d2

›20.↳ 9The apparatus of claim 9, wherein the controller is further configured to perform, in response to the data access activity of neighboring cells, apply…d2

›16.independentAn apparatus comprising:na resistance-based, non-volatile memory unit;a storage controller configured to apply a bias signal to cells of the memory un…+2

Classifications

2 codes

IPC · International Patent Classification

Section G — Physics

G11C13/00

USPC · US Patent Classification

365/148

Claim changes

Soon

Coming soonHow the claims changed between publication and grant

See which claims were amended, added or cancelled during examination, with every added and removed word marked.

AmendedAddedCancelledUnchanged

The published claims of this patent are not paired with the granted ones in what we hold.

File wrapper

⤢ drag to zoom

USPTOApplicanthover for detail · click to open

Pendency

2.2 y

817 days filing → grant

Office actions

non-final + final

Responses

no RCE

Examiner

Hoai V Ho

art unit 2827 · TC 2800

Law firm

Law firm · Log in to unlock

Citations: 12 back · 0 forward

See the full prosecution history — every USPTO and applicant action on this file, in order.

Term & fees

See the term timeline — pendency span, in-force span, the maintenance fees paid and both computed expiry dates.

Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20140219001 A1	7 Aug 2014

Validity challenges

See the validity challenges on record — reexaminations, IPRs and PGRs, with their institution decisions and outcomes.

Citations

See every patent this one cites and every patent that cites it back — publication, assignee, and how each one was found.