Solid-state imaging device, manufacturing method thereof, and camera with alternately arranged pixel combinations having differing on-chip lenses

A solid-state imaging device, comprising:na semiconductor substrate; anda pixel unit having a plurality of pixels on the semiconductor substrate,wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups,wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element,wherein a lens unit is formed on the semiconductor substrate and includes a plurality of on-chip lenses, andwherein the on-chip lenses formed on the first pixel groups are different in size from the on-chip lenses formed on the second pixel groups.

A solid-state imaging system comprising:na solid-state imaging device in which a plurality of pixels are integrated on a light sensing surface;an optical system which guides incident light to an imaging unit of the solid-state imaging device; anda signal processing circuit which processes output signals of the solid-state imaging device,wherein the solid-state imaging device includes:na semiconductor substrate; anda pixel unit having a plurality of pixels on the semiconductor substrate,wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups,wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element,wherein a lens unit is formed on the semiconductor substrate and includes a plurality of on-chip lenses, andwherein the on-chip lenses formed on the first pixel groups are different in size from the on-chip lenses formed on the second pixel groups.