Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes

A method to make a contact, comprising:ndepositing a dielectric layer on a substrate having a transistor;etching a first opening in the dielectric layer that extends to a source region;forming an insulator on the source region;forming a contact metal on the insulator, the insulator and contact metal formed by a conformal deposition process the insulator separating the contact metal from the source region wherein the insulator at least partially release the metal Fermi level from the semiconductor source or drain region; andfilling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.