The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23Â° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23Â° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

Claims

13 · 1 independent · depth 4

13 granted claims

›1.independentA film for back surface of flip-chip semiconductor, which is to be formed on a back surface of a semiconductor element flip-chip connected onto an adh…+12

›2.↳ 1The film for back surface of flip-chip semiconductor according to claim 1, wherein a blending proportion of the thermoplastic resin component having a…d2

›3.↳ 1The film for back surface of flip-chip semiconductor according to claim 1, wherein the thermoplastic resin component having a glass transition tempera…d2

›4.↳ 1The film for back surface of flip-chip semiconductor according to claim 1, further comprising at least a layer formed of at least a thermosetting resi…d2+1

›6.↳ 1The film for back surface of flip-chip semiconductor according to claim 1, wherein the thermosetting resin component includes an epoxy resin.d2

›7.↳ 1The film for back surface of flip-chip semiconductor according to claim 1, wherein the layer further comprises a coloring agent.d2

›8.↳ 1The film for back surface of flip-chip semiconductor according to claim 1, wherein a thickness of the film for back surface of flip-chip semiconductor…d2

›9.↳ 1The film for back surface of flip-chip semiconductor according to claim 1, wherein a thickness of the semiconductor element falls within a range of fr…d2

›10.↳ 1A dicing tape-integrated film for back surface of semiconductor, which comprises:na dicing tape including a base material and a pressure-sensitive adh…d2+3

Classifications

13 codes

IPC · International Patent Classification

Section H — Electricity

H01L23/00
H01L21/78
H01L29/40
H01L21/50
H01L23/31
H01L23/48
H01L23/52
H01L23/544
H01L21/683

USPC · US Patent Classification

257/783257/782438/118257/E21.514

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Pendency

3.6 y

1,317 days filing → grant

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2 RCE

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Chris Chu

art unit 2815 · TC 2800

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›Priority documents — 1

Type	Document	Date
related publication	US 20130099394 A1	25 Apr 2013

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