Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device

A method for producing a semiconductor device using a dicing tape-integrated film for semiconductor back surface, the method comprising:nattaching a non-circuit surface of a semiconductor wafer onto a film for semiconductor back surface in a dicing tape-integrated film for semiconductor back surface,wherein the dicing tape integrated film for semiconductor back surface comprises a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, anda film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape,wherein a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, andwherein the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm,dicing the semiconductor wafer to form a semiconductor chip,separating the semiconductor chip together with the film for semiconductor back surface from the second pressure-sensitive adhesive layer of the dicing tape, and flip chip-connecting the semiconductor chip onto an adherend.