A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

Claims

9 · 2 independent · depth 3

9 granted claims

›1.independentA pattern forming method, comprising:napplying, to a substrate, a resist composition of which solubility in a positive developer which is an alkali de…+7

›2.↳ 1The pattern forming method according to claim 1,nwherein the resin has a lactone group.d2

›3.↳ 1The pattern forming method according to claim 1, further comprising:nwashing the resist film with a rinsing solution containing an organic solvent aft…d2+2

›6.↳ 1The pattern forming method according to claim 1,nwherein the resist composition further contains a basic compound.d2

›7.↳ 1The pattern forming method according to claim 1,nwherein the resist composition further contains a fluorine-containing surfactant, a silicon-containin…d2

›8.↳ 1The pattern forming method according to claim 1,nwherein the exposing of the resist film is performed with light having a wavelength of 193 nm.d2

›9.independentA pattern forming method, comprising:napplying, to a substrate, a resist composition of which solubility in a positive developer which is an alkali de…

Classifications

6 codes

IPC · International Patent Classification

Section G — Physics

G03F7/30
G03F7/039
G03F7/32

USPC · US Patent Classification

430/434430/326430/331

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3.0 y

1,078 days filing → grant

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Anca Eoff

art unit 1722 · TC 1700

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20100323305 A1	23 Dec 2010

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