A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

Claims

13 · 2 independent · depth 3

13 granted claims

›1.independentA pattern forming method, comprising:n(A) coating a substrate with a positive resist composition of which solubility in a positive developer increases…+11

›2.↳ 1The pattern forming method according to claim 1, which further comprises:n(C) developing the resist film with a positive developer.d2

›3.↳ 1The pattern forming method according to claim 1, which further comprises:n(E) beating the resist film after (B) exposing the resist film.d2+1

›5.↳ 1The pattern forming method according to claim 1,nwherein (D) developing the resist film with a negative developer is performing development with a dev…d2

›6.↳ 1The pattern forming method according to claim 1,nwherein (D) developing the resist film with a negative developer is performing development with a dev…d2

›7.↳ 1The pattern forming method according to claim 1,nwherein (D) developing the resist film with a negative developer is performing development with a dev…d2

›8.↳ 1The pattern forming method according to claim 1,nwherein (D) developing the resist film with a negative developer is performing development with a dev…d2

›9.↳ 1The pattern forming method according to claim 1, which further comprises:n(F) washing the resist film with a rinsing solution containing an organic so…d2

›10.↳ 1The pattern forming method according to claim 1, wherein the exposing step (B) is performed using a KrF excimer laser, an ArF excimer laser or an. EUV…d2

›11.↳ 1The pattern forming method according to claim 1, wherein the resin has no aromatic group.d2

›12.↳ 1The pattern forming method according to claim 1, wherein the resin is the alicyclic hydrocarbon-based acid-decomposable resin (ii) having a lactone gr…d2

›13.independentA pattern forming method, comprising:n(A) coating a substrate with a positive resist composition of which solubility in a positive developer increases…

Classifications

7 codes

IPC · International Patent Classification

Section G — Physics

G03F7/039
G03F7/32
G03F7/30

USPC · US Patent Classification

430/434430/435430/326430/436

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5.1 y

1,876 days filing → grant

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non-final + final

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3 RCE

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Anca Eoff

art unit 1722 · TC 1700

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20080261150 A1	23 Oct 2008

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