Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector

An assembly comprising at least one detector, each of the at least one detector comprising:na substrate having a doped region of a first conduction type;a layer of dopant material of a second conduction type located on the substrate;a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material;na first electrode connected to the layer of dopant material; anda second electrode connected to the substrate;wherein the diffusion layer is arranged to form a radiation sensitive surface.

A tool comprising at least one detector, each of the at least one detector comprising:na substrate having a doped region of a first conduction type;a layer of dopant material of a second conduction type located on the substrate;a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material;na first electrode connected to the layer of dopant material; anda second electrode connected to the substrate;wherein the diffusion layer is arranged to form a radiation sensitive surface.

A lithographic apparatus, comprising:nan illumination system configured to produce a beam of radiation;a support device configured to support a patterning device that is configured to pattern the beam of radiation;a projection system configured to project the patterned beam onto a substrate; anda detector comprising,na substrate having a doped region of a first conduction type;a layer of dopant material of a second conduction type located on the substrate;a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material;a first electrode connected to the layer of dopant material; anda second electrode connected to the substrate;wherein the diffusion layer is arranged to form a radiation sensitive surface.

A method, comprising:ndepositing a layer of dopant material of a first conduction type on top of a surface of a substrate, such that in the substrate a diffusion layer is formed and so that the dopant layer is arranged to form a radiation sensitive surface, and such that a doping profile, which is representative of a doping concentration of the diffusion layer, increases from the surface of the substrate to the dopant layer;wherein the substrate has a doped region of a second conduction type and wherein the diffusion layer is in contact with the layer of dopant material and the doped region of the substrate;partly covering the dopant layer with a first contact comprising a conducting material, such that first regions and second regions are formed, such that the dopant layer remains exposable to the radiation in the second regions;covering the dopant layer with the first contact material in the first regions; anddepositing a second contact comprising a conducting material at a second surface side of the substrate.

A method in a lithographic apparatus having a support structure for a patterning device and a substrate table for supporting a substrate, comprising:nreceiving a signal from an assembly comprising at least one detector, the detector comprising:na substrate having a doped region of a first conduction type;a layer of dopant material of a second conduction type located on the substrate;a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material;na first electrode connected to the layer of dopant material; anda second electrode connected to the substrate, wherein the diffusion layer is arranged to form a radiation sensitive surface; anddetermining a position of the patterning device with respect to the substrate table based on the signal; andaligning the substrate to the patterning device based on the position of the patterning device with respect to the substrate table.

A method in a lithographic apparatus having a patterning device, comprising:napplying electromagnetic radiation to a surface of a substrate using the patterning device;receiving a signal from an assembly comprising at least one detector based on the applied electromagnetic radiation, the detector comprising:na substrate having a doped region of a first conduction type;a layer of dopant material of a second conduction type located on the substrate;a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material;na first electrode connected to the layer of dopant material; anda second electrode connected to the substrate, wherein the diffusion layer is arranged to font a radiation sensitive surface; anddetermining a dose of the electromagnetic radiation based on the received signal.