Active matrix liquid crystal display device

An active matrix device comprising:na crystalline semiconductor film formed over a substrate;a first insulating film adjacent to the crystalline semiconductor film;a gate line adjacent to the first insulating film;a second insulating film formed over the gate line;a source line formed over the second insulating film;a drain electrode formed above the gate line, wherein the drain electrode is positioned in a same layer as the source line;a first transistor having a first channel forming region arranged at an intersection of the gate line and the source line; anda second transistor having a second channel forming region arranged at an intersection of the gate line and the drain electrode,wherein the first channel forming region is covered with the source line,wherein the second channel forming region is partially covered with the drain electrode, andwherein the first channel forming region and the second channel forming region are included in a stretch of the crystalline semiconductor film.

An active matrix device comprising:na crystalline semiconductor film formed over a substrate;a first insulating film adjacent to the crystalline semiconductor film;a gate line adjacent to the first insulating film;a second insulating film formed over the gate line;a source line formed over the second insulating film;a drain electrode formed above the gate line, wherein the drain electrode is positioned in a same layer as the source line; anda multi channel transistor having a plurality of channel forming regions electrically connected to the source line and the drain electrode,wherein a first of the plurality of channel forming regions is covered with the source line,wherein a second of the plurality of channel forming regions is partially covered with the drain electrode, andwherein the first of the plurality of channel forming regions and the second of the plurality of channel forming regions are included in a stretch of the crystalline semiconductor film.

An active matrix device comprising:na crystalline semiconductor film formed over a substrate;a gate line adjacent to the crystalline semiconductor film;a source line formed over the gate line;a drain electrode formed above the gate line, wherein the drain electrode is positioned in a same layer as the source line; anda multi channel transistor having a plurality of channel forming regions electrically connected to the source line and the drain electrode,wherein a first of the plurality of channel forming regions is covered with the source line,wherein a second of the plurality of channel forming regions is partially covered with the drain electrode, andwherein the first of the plurality of channel forming regions and the second of the plurality of channel forming regions are included in a stretch of the crystalline semiconductor film.