The present invention has the objects to provide a novel material for forming Si-containing film, especially a material containing a cyclic siloxane compound suitable to a PECVD equipment for low dielectric constant insulating film, and to provide an Si-containing film using the same, and a semiconductor device containing those films. The present invention relates to a material for forming Si-containing film, containing a cyclic siloxane compound represented by the following general formula (1) [structure] (In the formula, A represents a group containing at least one selected from the group consisting of an oxygen atom, a boron atom and a nitrogen atom, n is 1 or 2, and x is an integer of from 2 to 10.), and its use.

Claims

13 · 3 independent · depth 5

13 granted claims

›1.independentA material for forming Si-containing film, characterized by containing a cyclic siloxane compound represented by the following general formula (20)+9

›2.↳ 1The material for forming Si-containing film as claimed in claim 1, characterized in that an amount of impurities other than silicon, carbon, oxygen, h…d2

›3.↳ 1A production method of an Si-containing film, characterized by using the material for forming Si-containing film as claimed in claim 1 as a raw materi…d2+7

›11.independentA cyclic siloxane compound, characterized by being represented by the following general formula (20)+1

›13.independentThe material for forming Si-containing film as claimed in 1, characterized in that the compound represented by the general formula (20) is 2,4,6-tris(…

Classifications

3 codes

IPC · International Patent Classification

Section C — Chemistry; metallurgy

C07F7/00

USPC · US Patent Classification

556/460556/450

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Pendency

6.1 y

2,212 days filing → grant

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after a restriction

Responses

1 RCE

Examiner

Jennifer C Sawyer

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20100052114 A1	4 Mar 2010

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