USPatentGranted
B1

Method for programming non-volatile memory with self-adjusting maximum program loop

Granted 9 Jan 2007 · no office action yet

Current assignee: SANDISK TECHNOLOGIES INC. · originally Western Digital

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Inventors: Jun Wan, Jeffrey W. Lutze · Examiner: Son T. Dinh · AU 2824 · TC 2800

Application
11/194,439
filed 1 Aug 2005
Publication
Not published
not published
Patent· this page
US 7,161,836
granted 9 Jan 2007

Life of the patent

6 dated events
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Abstract

The maximum allowable number of voltage programming pulses to program memory elements of a non-volatile memory device is adjusted to account for changes in the memory elements which occur over time. Programming pulses are applied until the threshold voltage of one or more memory elements reaches a certain verify level, after which a defined maximum number of additional pulses may be applied to other memory elements to allow them to also reach associated target threshold voltage levels. The technique enforces a maximum allowable number of programming pulses that can change over time as the memory is cycled.

Claims

26 · 3 independent · depth 3
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26 granted claims

Classifications

5 codes
IPC · International Patent Classification
Section G — Physics
  • G11C7/00
  • G11C11/34
USPC · US Patent Classification
365/185.22365/185.19365/185.18

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File wrapper

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Pendency
1.4 y
526 days filing → grant
Office actions
0
none on record
Responses
0
1 RCE
Examiner
Son T. Dinh
art unit 2824 · TC 2800
Citations: 25 back · 1 forward

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