A mask design is generated for patterning a test wafer using a lithographic or etch process, the process is characterized based on the patterned test wafer, and a pattern-dependent model is used based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.

Claims

17 · 2 independent · depth 3

17 granted claims

›1.independentA method comprisingnfabricating a test wafer having a surface that has topographical variation as a result of underlying pattern dependencies and thic…+15

›2.↳ 1The method of claim 1 in which the lithographic or etch process is based on a mask design that comprises various line and space dimensions.d2

›3.↳ 1The method of claim 1 in which the lithographic or etch process is based on a mask design that includes multiple masks for multiple levels, each of th…d2

›4.↳ 1The method of claim 1 in which the process comprises a preselected lithography or etch tool or lithography or etch recipe.d2

›5.↳ 1The method of claim 1 in which the process comprises preselected power settings.d2

›6.↳ 1The method of claim 1 in which the process comprises preselected etch times.d2

›7.↳ 1The method of claim 1 in which the process comprises preselected polish times.d2

›8.↳ 1The method of claim 1 in which the process comprises preselected deposition times.d2

›9.↳ 1The method of claim 1 in which the process comprises preselected pressures.d2

›10.↳ 1The method of claim 1 also including using an electronics design automation (EDA) tool in conjunction with at least one of the fabricating and the cha…d2

›11.↳ 1The method of claim 1 in which at least one of the fabricating and the characterizing, is provided as a service in a network.d2+1

›13.↳ 1The method of claim 1 in which the process includes a preselected photoresist.d2

›14.↳ 1The method of claim 1 also including using a pattern dependent model based on the characterizing to predict characteristics of integrated circuits tha…d2

›16.↳ 1The method of claim 1 in which the topographical variation is produced by at least one of deposition and chemical mechanical polishing.d2

›17.↳ 1The method of claim 1 in which the characterizing includes measuring the feature dimenstion variations that depend on the topographical variation.d2

›15.independentA medium bearing instructions to enable a machine toncharacterize the impact that topographical variation of a surface of a test wafer that results fr…

Classifications

3 codes

IPC · International Patent Classification

Section G — Physics

G06F17/50

USPC · US Patent Classification

716/4716/19

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Pendency

3.5 y

1,274 days filing → grant

Office actions

non-final + final

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2 RCE

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Examiner

Stacy A. Whitmore

art unit 2812 · TC 2800

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1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20030229880 A1	11 Dec 2003

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