›1.independentA method of using a floating gate transistor having a floating gate electrode and an adjacent amorphous silicon carbide (a-SiC) gate insulator between…+3
A method of using a floating gate transistor having a floating gate electrode and an adjacent amorphous silicon carbide (a-SiC) gate insulator between the floating gate electrode and substrate, the method comprising:nstoring data by changing a charge of the floating gate electrode; reading data by detecting a current between a source and a drain in the substrate; and refreshing data based on a data charge retention time for the floating gate transistor that depends upon a barrier energy at an interface between the floating gate electrode and the gate insulator.
›2.↳ 1The method of claim 1, wherein reading data further comprises detecting an amplified current signal between the source and the drain.d2
The method of claim 1, wherein reading data further comprises detecting an amplified current signal between the source and the drain.
›3.↳ 1The method of claim 1, wherein the detected current is based on the charge of the floating gate electrode and a transconductance gain of the floating …d2
The method of claim 1, wherein the detected current is based on the charge of the floating gate electrode and a transconductance gain of the floating gate transistor.
›23.↳ 1The method of claim 1 wherein reading data comprises reading data by detecting a current between a source and a drain in a silicon substrate.d2
The method of claim 1 wherein reading data comprises reading data by detecting a current between a source and a drain in a silicon substrate.
›4.independentA method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the following gate transistor by placing a charge o…+5
A method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the following gate transistor by placing a charge on the floating gate electrode, wherein the floating gate transistor has a barrier energy between the floating gate electrode and a silicon carbide (SiC) gate insulator separating the floating gate electrode from a substrate, the barrier energy being less than approximately 3.3 eV; and reading the floating gate transistor by placing a read voltage on a control gate and detecting current in a channel between a source region and a drain region in the substrate.
›5.↳ 4The method of claim 4 wherein programming a floating gate electrode further comprises causing hot electron injection from the channel through an amorp…d2
The method of claim 4 wherein programming a floating gate electrode further comprises causing hot electron injection from the channel through an amorphous silicon carbide (a-SiC) gate insulator to the floating gate electrode.
›6.↳ 4The method of claim 4, further comprising erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is l…d2
The method of claim 4, further comprising erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is less than 12 Volts.
›7.↳ 4The method of claim 4, further comprising refreshing the charge placed on the floating gate electrode.d2+2
The method of claim 4, further comprising refreshing the charge placed on the floating gate electrode.
›8.↳ 7The method of claim 7, wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time int…d3
The method of claim 7, wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time intervals of less than 40 seconds.
›9.↳ 7The method of claim 7, wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time int…d3
The method of claim 7, wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time intervals.
›10.independentA method for operating a floating gate transistor connected to a control line and a data line, the method comprising:nstoring data on a floating gate …+3
A method for operating a floating gate transistor connected to a control line and a data line, the method comprising:nstoring data on a floating gate electrode in the floating gate transistor by providing a control voltage on the control line and a write voltage on the data line such that charge is carried from a substrate to the floating gate electrode through a silicon carbide (SiC) gate insulator, wherein a barrier energy between the silicon carbide (SiC) gate insulator and the floating gate electrode is less than 3.3 eV; reading the data stored on the floating gate electrode by placing a read voltage on the control line and detecting the current in the floating gate transistor at the data line; and erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is less than 12 Volts.
›11.↳ 10The method of claim 10 wherein storing data further comprises causing the charge to be carried from the substrate to the floating gate electrode throu…d2
The method of claim 10 wherein storing data further comprises causing the charge to be carried from the substrate to the floating gate electrode through an amorphous silicon carbide (a-SiC) gate insulator.
›12.↳ 10The method of claim 10, further comprising refreshing the charge placed on the floating gate electrode.d2+1
The method of claim 10, further comprising refreshing the charge placed on the floating gate electrode.
›14.↳ 12The method of claim 12 wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time int…d3
The method of claim 12 wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time intervals.
›13.independentThe method of calim 12 wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time int…
The method of calim 12 wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time intervals of less than 40 seconds.
›15.independentA method for operating a floating gate transistor comprising:nprogramming the floating gate transistor by inducing charge to migrate from a channel in…+4
A method for operating a floating gate transistor comprising:nprogramming the floating gate transistor by inducing charge to migrate from a channel in a substrate through an amorphous silicon carbide (a-SiC) gate insulator to a floating gate electrode in the floating gate transistor; and erasing the floating gate transistor by inducing charge to migrate from the floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel.
›16.↳ 15The method of claim 15 wherein:nprogramming comprises programming the floating gate transistor by inducing hot electron injection from a channel in a …d2
The method of claim 15 wherein:nprogramming comprises programming the floating gate transistor by inducing hot electron injection from a channel in a substrate through the amorphous silicon carbide (a-SiC) gate insulator to a polysilicon floating gate electrode in the floating gate transistor; and erasing comprises erasing the floating gate transistor by inducing charge to migrate from the polysilicon floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel through Fowler-Nordheim tunneling.
›17.↳ 15The method of claim 15, further comprising reading the floating gate transistor by detecting current in the floating gate transistor.d2
The method of claim 15, further comprising reading the floating gate transistor by detecting current in the floating gate transistor.
›18.↳ 15The method of claim 15, further comprising refreshing the floating gate transistor at regular time intervals.d2
The method of claim 15, further comprising refreshing the floating gate transistor at regular time intervals.
›24.↳ 15The method of claim 15 wherein programming comprises programming the floating gate transistor by inducing charge to migrate from a channel between a s…d2
The method of claim 15 wherein programming comprises programming the floating gate transistor by inducing charge to migrate from a channel between a source and a drain in a silicon substrate through an amorphous silicon carbide (a-SiC) gate insulator to a floating gate electrode in the floating gate transistor.
›19.independentA method for operating a floating gate transistor connected to a control line and a data line, the method comprising:nprogramming the floating gate tr…+4
A method for operating a floating gate transistor connected to a control line and a data line, the method comprising:nprogramming the floating gate transistor by providing a control voltage on the control line and a write voltage on the data line to induce charge to migrate from a channel in a substrate through an amorphous silicon carbide (a-SiC) gate insulator to a floating gate electrode in the floating gate transistor; and erasing the floating gate transistor by inducing charge to migrate from the floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel.
›20.↳ 19The method of claim 19 wherein:nprogramming comprises programming the floating gate transistor by providing a control voltage on the control line and …d2
The method of claim 19 wherein:nprogramming comprises programming the floating gate transistor by providing a control voltage on the control line and a write voltage on the data line to induce hot electron injection from a channel in a substrate through the amorphous silicon carbide (a-SiC) gate insulator to a polysilicon floating gate electrode in the floating gate transistor; and erasing comprises applying an erase voltage of less than 12 Volts to the floating gate transistor to erase the floating gate transistor by inducing charge to migrate from the polysilicon floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel through Fowler-Nordheim tunneling.
›21.↳ 19The method of claim 19, further comprising reading the floating gate transistor by placing a read voltage on the control line and detecting current in…d2
The method of claim 19, further comprising reading the floating gate transistor by placing a read voltage on the control line and detecting current in the floating gate transistor.
›22.↳ 19The method of claim 19, further comprising refreshing the floating gate transistor at regular time intervals of less than 40 seconds.d2
The method of claim 19, further comprising refreshing the floating gate transistor at regular time intervals of less than 40 seconds.
›25.↳ 19The method of claim 19 wherein programming comprises programming the floating gate transistor by providing a control voltage on the control line and a…d2
The method of claim 19 wherein programming comprises programming the floating gate transistor by providing a control voltage on the control line and a write voltage on the data line to induce charge to migrate from a channel between a source and a drain in a silicon substrate through an amorphous silicon carbide (a-SiC) gate insulator to o floating gate electrode.
›26.independentA method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the floating gate transistor by placing a charge on…+4
A method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the floating gate transistor by placing a charge on the floating gate electrode, wherein the floating gate transistor has a barrier energy between the floating gate electrode and an amorphous silicon carbide (a-SiC) gate insulator separating the floating gate electrode from a substrate, the barrier energy being less than approximately 3.3 eV; and reading the floating gate transistor by placing a read voltage on a control gate and detecting current in a channel between a source region and a drain region in the substrate.
›27.↳ 26The method of claim 26, further comprising erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is …d2
The method of claim 26, further comprising erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is less than 12 Volts.
›28.↳ 26The method of claim 26, further comprising refreshing the charge placed on the floating gate electrode.d2+1
The method of claim 26, further comprising refreshing the charge placed on the floating gate electrode.
›29.↳ 28The method of claim 28, wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time in…d3
The method of claim 28, wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time intervals.
›30.↳ 26The method of claim 26 wherein programming further comprises programming the floating gate electrode by inducing charge to migrate from a channel betw…d2
The method of claim 26 wherein programming further comprises programming the floating gate electrode by inducing charge to migrate from a channel between a source region and a drain region in a silicon substrate through the amorphous silicon carbide (a-SiC) gate insulator to the floating gate electrode.
›31.independentA method for operating a floating gate transistor connected to a control line and a data line, the method comprising:nstoring data on a floating gate …+4
A method for operating a floating gate transistor connected to a control line and a data line, the method comprising:nstoring data on a floating gate electrode in the floating gate transistor by providing a control voltage on the control line and a write voltage on the data line such that charge is carried from a substrate to the floating gate electrode through an amorphous silicon carbide (a-SiC) gate insulator, wherein a barrier energy between the amorphous silicon carbide (a-SiC) gate insulator and the floating gate electrode is less than 3.3 eV; reading the data stored on the floating gate electrode by placing a read voltage on the control line and detecting the current in the floating gate transistor at the data line; and erasing the floating gate transistor by applying an erase voltage to the floating gate transistor.
›32.↳ 31The method of claim 31, further comprising refreshing the charge placed on the floating gate electrode.d2+1
The method of claim 31, further comprising refreshing the charge placed on the floating gate electrode.
›33.↳ 32The method of claim 32 wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time int…d3
The method of claim 32 wherein refreshing the charge placed on the floating gate electrode further comprises refreshing the charge at regular time intervals.
›34.↳ 31The method of claim 31 wherein erasing comprises erasing the floating gate transistor by applying an erase voltage to the floating gate transistor whi…d2
The method of claim 31 wherein erasing comprises erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is less than 12 Volts.
›35.↳ 31The method of claim 31 wherein storing data further comprises storing data on the floating gate electrode in the floating gate transistor by providing…d2
The method of claim 31 wherein storing data further comprises storing data on the floating gate electrode in the floating gate transistor by providing a control voltage on the control line and a write voltage on the data line such that charge is carried from a channel between a source region and a drain region in a silicon substrate to the floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator.
›36.independentA method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the floating gate transistor by placing a charge on…+1
A method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the floating gate transistor by placing a charge on the floating gate electrode, wherein the floating gate transistor has a barrier energy between the floating gate electrode and a silicon carbide (SiC) gate insulator separating the floating gate electrode from a substrate, the barrier energy being less than approximately 3.3 eV; reading the floating gate transistor by placing a read voltage on a control gate and detecting current in a channel between a source region and a drain region in the substrate; and erasing the floating gate transistor.
›37.↳ 36The method of claim 36 wherein:nprogramming a floating gate electrode further comprises causing hot electron injection from the channel through an amo…d2
The method of claim 36 wherein:nprogramming a floating gate electrode further comprises causing hot electron injection from the channel through an amorphous silicon carbide (a-SiC) gate insulator to the floating gate electrode; erasing the floating gate transistor comprises erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is less than 12 Volts; and further comprising refreshing the charge placed on the floating gate electrode at regular time intervals.
›38.independentA method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the floating gate transistor by placing a charge on…+1
A method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the floating gate transistor by placing a charge on the floating gate electrode, wherein the floating gate transistor has a barrier energy between the floating gate electrode and a silicon carbide (SiC) gate insulator separating the floating gate electrode from a substrate, the barrier energy being less than approximately 3.3 eV; reading the floating gate transistor by placing a read voltage on a control gate and detecting current in a channel between a source region and a drain region in the substrate; and refreshing the charge placed on the floating gate electrode.
›39.↳ 38The method of claim 38 wherein:nprogramming a floating gate electrode further comprises causing hot electron injection from the channel through an amo…d2
The method of claim 38 wherein:nprogramming a floating gate electrode further comprises causing hot electron injection from the channel through an amorphous silicon carbide (a-SiC) gate insulator to the floating gate electrode; refreshing the charge comprises refreshing the charge placed on the floating gate electrode at regular time intervals; and further comprising erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is less than 12 Volts.
›40.independentA method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the floating gate transistor by placing a charge on…+1
A method of using a floating gate transistor, comprising:nprogramming a floating gate electrode of the floating gate transistor by placing a charge on the floating gate electrode, wherein the floating gate transistor has a barrier energy between the floating gate electrode and a silicon carbide (SiC) gate insulator separating the floating gate electrode from a substrate, the barrier energy being less than approximately 3.3 eV; reading the floating gate transistor by placing a read voltage on a control gate and detecting current in a channel between a source region and a drain region in the substrate; refreshing the charge placed on the floating gate electrode; and erasing the floating gate transistor.
›41.↳ 40The method of claim 40 wherein:nprogramming a floating gate electrode further comprises causing hot electron injection from the channel through an amo…d2
The method of claim 40 wherein:nprogramming a floating gate electrode further comprises causing hot electron injection from the channel through an amorphous silicon carbide (a-SiC) gate insulator to the floating gate electrode; refreshing the charge comprises refreshing the charge placed on the floating gate electrode at regular time intervals; and erasing the floating gate transistor comprises erasing the floating gate transistor by applying an erase voltage to the floating gate transistor which is less than 12 Volts.
›42.independentA method for operating a floating gate transistor comprising:nprogramming the floating gate transistor by inducing charge to migrate from a channel in…+1
A method for operating a floating gate transistor comprising:nprogramming the floating gate transistor by inducing charge to migrate from a channel in a substrate through an amorphous silicon carbide (a-SiC) gate insulator to a floating gate electrode in the floating gate transistor; reading the floating gate transistor; and erasing the floating gate by inducing charge to migrate from the floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel.
›43.↳ 42The method of claim 42 wherein:nprogramming comprises programming the floating gate transistor by inducing hot electron injection from a channel in a …d2
The method of claim 42 wherein:nprogramming comprises programming the floating gate transistor by inducing hot electron injection from a channel in a substrate through the amorphous silicon carbide (a-SiC) gate insulator to a polysilicon floating gate electrode in the floating gate transistor; reading the floating gate transistor comprises reading the floating gate transistor by detecting current in the floating gate transistor; erasing comprises erasing the floating gate transistor by inducing charge to migrate from the polysilicon floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel through Fowler-Nordheim tunneling; and further comprising refreshing the floating gate transistor at regular time intervals.
›44.independentA method for operating a floating gate transistor comprising:nprogramming the floating gate transistor by inducing charge to migrate from a channel in…+1
A method for operating a floating gate transistor comprising:nprogramming the floating gate transistor by inducing charge to migrate from a channel in a substrate through an amorphous silicon carbide (a-SiC) gate insulator to a floating gate electrode in the floating gate transistor; refreshing the floating gate transistor; and erasing the floating gate transistor by inducing charge to migrate from the floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel.
›45.↳ 44The method of claim 44 wherein:nprogramming comprises programming the floating gate transistor by inducing hot electron injection from a channel in a …d2
The method of claim 44 wherein:nprogramming comprises programming the floating gate transistor by inducing hot electron injection from a channel in a substrate through the amorphous silicon carbide (a-SiC) gate insulator to a polysilicon floating gate electrode in the floating gate transistor; erasing comprises erasing the floating gate transistor by inducing charge to migrate from the polysilicon floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel through Fowler-Nordheim tunneling; refreshing the floating gate transistor comprises refreshing the floating gate transistor at regular time intervals; and further comprising reading the floating gate transistor by detecting current in the floating gate transistor.
›46.independentA method for operating a floating gate transistor comprising:nprogramming the floating gate transistor by inducing charge to migrate from a channel in…+1
A method for operating a floating gate transistor comprising:nprogramming the floating gate transistor by inducing charge to migrate from a channel in a substrate through an amorphous silicon carbide (a-SiC) gate insulator to a floating gate electrode in the floating gate transistor; refreshing the floating gate transistor; reading the floating gate transistor; and erasing the floating gate transistor by inducing charge to migrate from the floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel.
›47.↳ 46The method of claim 46 wherein:nprogramming comprises programming the floating gate transistor by inducing hot electron injection from a channel in a …d2
The method of claim 46 wherein:nprogramming comprises programming the floating gate transistor by inducing hot electron injection from a channel in a substrate through the amorphous silicon carbide (a-SiC) gate insulator to a polysilicon floating gate electrode in the floating gate transistor; erasing comprises erasing the floating gate transistor by inducing charge to migrate from the polysilicon floating gate electrode through the amorphous silicon carbide (a-SiC) gate insulator to the channel through Fowler-Nordheim tunneling; and refreshing the floating gate transistor comprises refreshing the floating gate transistor at regular time intervals; and reading the floating gate transistor comprises reading the floating gate transistor by detecting current in the floating gate transistor.
