A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO.sub.2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.

Claims

10 · 2 independent · depth 2

10 granted claims

›1.independentA composition for CMP, chemical/mechanical planarization, of a semiconductor substrate having silicon dioxide underlying a layer of metal to be remove…+4

›6.independentA method for polishing by CMP, chemical/mechanical planarization, a semiconductor substrate having silicon dioxide underlying a layer of metal to be r…+4

›7.↳ 6The method as recited in claim 6 wherein the step of inhibiting removal of the silicon dioxide further includes the step of: inhibiting removal of the…d2

›8.↳ 6The method as recited in claim 6 wherein the step of inhibiting removal of the silicon dioxide further includes the step of: inhibiting removal of the…d2

›9.↳ 6The method as recited in claim 6 wherein the step of inhibiting removal of the silicon dioxide further includes the step of: inhibiting removal of the…d2

›10.↳ 6The method as recited in claim 6 wherein the step of inhibiting removal of the silicon dioxide further includes the step of: inhibiting removal of the…d2

Classifications

4 codes

USPC · US Patent Classification

451/41451/60106/3513/9

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2.5 y

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Joseph J. Hail, III

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