Rectifying circuit and control method therefor
Published 30 May 2002 · application patented
Current assignee: Funai Electric · originally Fuji Electric
Law firm: Law firm · Log in to unlock
Attorney: Attorney · Log in to unlock
Inventors: Kazuo Kuroki, Kazuaki Mino · Examiner: Rajinikant B. Patel · AU 2832 · TC 2800
Life of the application
5 dated eventsAbstract
A series circuit of two switching devices and a series circuit of two diodes are connected together in parallel to constitute a bi-directional switch circuit for one phase. N bi-directional switch circuits are provided, and the junction between the switching devices of each of the switch circuits is connected to an AC input terminal of a corresponding phase via a reactor. A cathode of the diode series circuit of each switch circuit is connected to a positive output terminal via a diode, and an anode of the diode series circuit of each switch circuit is connected to a negative output terminal via a diode. Two capacitors are connected in series between the positive and negative output terminals, and the junction between the diodes of each switch circuit is connected to the junction between the two capacitors.
Description
9 parts›BACKGROUND OF THE INVENTION AND RELATED ART STATEMENT
The present invention relates to a rectifying circuit for converting an N-phase (N being a natural number equal to or greater than 2) AC voltage into a DC voltage, as well as a control method therefor.
FIG. 14 shows a conventional rectifying circuit for converting a three-phase AC voltage into a DC voltage. This conventional technique is substantially described in Japanese Patent Publication (KOKAI) No. 9-182441. In FIG. 14, R, S and T denote AC input terminals; P and N denote DC output terminals; L 1 , L 2 and L 3 denote reactors; D 1 to D 18 denote diodes; S 1 to S 3 denote switching devices of corresponding phases; and C 1 and C 2 denote capacitors.
Next, the operation of this circuit will be described. In the following, names of elements may be omitted, with only their reference numerals shown. For example, when the switching devices S 1 and S 2 are turned on, current flows through a path R→L 1 →D 1 →S 1 →D 8 →D 9 →S 2 →D 4 →L 2 →S→R to accumulate energy in the reactors L 1 and L 2 . Furthermore, when S 1 is turned off with S 2 on, the energy from the reactors L 1 and L 2 is charged to the capacitor C 1 through the path R→L 1 →D 1 →D 13 →C 1 →D 9 →S 2 →D 4 →L 2 →S→R. On the other hand, when S 2 is turned off with S 1 on, current flows through a path R→L 1 →D 1 →S 1 →D 8 →C 2 →D 16 →D 4 →L 2 →S→R to charge the energy from the reactors L 1 and L 2 to the capacitor C 2 .
Further, when both S 1 and S 2 are turned off, current flows through a path R→L 1 →D 1 →D 13 →C 1 →C 2 →D 16 →D 4 →L 2 →S→R to charge the energy from the reactors L 1 and L 2 to both capacitors C 1 and C 2 . Repetition of such switching operations enables an AC voltage to be converted into a DC voltage while the input current is controlled at a high power factor. Further, the voltages of the two capacitors C 1 and C 2 can be individually regulated by adjusting the on-time of the switching devices S 1 to S 3 .
In the conventional three-phase input technique shown in FIG. 14, the number of semiconductor devices (switching devices and diodes) through which current passes is six for storage of energy in the reactors, five for individual charging of the capacitor C 1 or C 2 , and four for the simultaneous charging of both capacitors C 1 and C 2 . Thus, current passes through a large number of devices, thus increasing energy loss in the semiconductor devices. Further, the cooling parts for reducing heat generated by the energy loss must be large, thereby increasing the size and price of the apparatus. Additionally, a main circuit includes a large number of semiconductor devices, specifically 21 .
It is thus an object of the present invention to provide a rectifying circuit and control method therefor for reducing the number of semiconductor devices through which current passes as compared to the prior art, thereby reducing energy loss, and for reducing number of semiconductor device parts, making it possible to reduce the size, weight, and price of the apparatus.
Further objects and advantages of the invention will be apparent from the following description of the invention.
›SUMMARY OF THE INVENTION · 1 of 2
To attain the above object, the first aspect of the present invention is a rectifying circuit for converting an N-phase (N being a natural number equal to or greater than 2) AC voltage into a DC voltage. In the rectifying circuit, a series circuit of two switching devices having the same conductive direction and a series circuit of two diodes having the same conductive direction are connected together in parallel to constitute a bi-directional switch circuit for one phase. N bi-directional switch circuits are provided, and a junction between the switching devices of each bi-directional circuit is connected to an AC input terminal of a corresponding phase via a reactor. A cathode of the diode series circuit of each bi-directional switch circuit is connected to a positive DC output terminal via a diode, and an anode of the diode series circuits of each bi-directional switch circuit is connected to a negative DC output terminal via a diode. Two capacitors are connected in series between the positive and negative DC output terminals. The junction between the diodes of each bi-directional switch circuit is connected to a junction between the two capacitors.
In the second aspect of the present invention, two series circuits each comprising a diode and a switching device having different conductive directions are formed, and the first and second series circuits are connected together in parallel so that the cathodes of the diodes are connected together to constitute a bi-directional switch circuit for one phase. N bi-directional switch circuits are provided, and an internal junction of the first series circuit of each of the bi-directional switch circuits is connected to an AC input terminal of a corresponding phase via a reactor. The cathodes of the diodes of each bi-directional switch circuit are connected to a positive DC output terminal via a diode, and a junction between the switching devices of each bi-directional switch circuit is connected to a negative DC output terminal via a diode. Two capacitors are connected together in series between the positive and negative DC output terminals. All internal junctions of the second series circuits of the bi-directional switch circuits are connected to a junction between the two capacitors.
In the third aspect of the present invention, two series circuits each comprising a diode and a switching device having different conductive directions are formed, and the first and second series circuits are connected together in parallel so that the anodes of the diodes are connected together to constitute a bi-directional switch circuit for one phase. N bi-directional switch circuits are provided, and an internal junction of the first series circuit of each of the bi-directional switch circuits is connected to an AC input terminal of a corresponding phase via a reactor. A junction between the switching devices of each bi-directional switch circuit is connected to a positive DC output terminal via a diode, and the anodes of the diodes of each bi-directional switch circuit are connected to a negative DC output terminal via a diode. Two capacitors are connected together in series between the positive and negative DC output terminals via a diode. All internal junctions of the second series circuits of the bi-directional switch circuits are connected to a junction between the two capacitors.
In the fourth aspect of the present invention, a series circuit of two diodes having the same conductive direction and a series circuit of two switching devices having the same conductive direction are connected together in parallel to constitute a bi-directional switch circuit for one phase. N bi-directional switch circuits are provided, and a junction between the diodes of each bi-directional switch circuit is connected to an AC input terminal of corresponding phase via a reactor. A cathode of the diode series circuit of each bi-directional switch circuit is connected to a positive DC output terminal via a diode, and an anode of the diode series circuits of each bi-directional switch circuit is connected to a negative DC output terminal via a diode. Two capacitors are connected in series between the positive and negative DC output terminals, and a junction between the switching devices of each bi-directional switch circuit is connected to a junction between the two capacitors.
In the fifth aspect of the present invention, according to any of the second to fourth aspects, one of the two diodes constituting each bi-directional switch circuit is replaced with a thyrister and, when the interphase power is low, the thyrister is turned on to restrain a rush current to the capacitor when the power supply is turned on.
In the sixth aspect of the present invention, N+1 series circuits each comprising two switching devices are formed. The first to N+1-th switching-device series circuits are connected together in parallel, and a diode is connected inversely in parallel to each switching device. N series circuits each comprising two diodes are formed. The first to N-th diode series circuits are connected together in parallel so that the cathodes of the diodes are connected together, while the anodes thereof are connected together and the cathodes are connected to a positive DC output terminal. The anodes are connected to a negative DC output terminal. Two capacitors are connected in series between the positive and negative DC output terminals. A junction between the diodes of each of the first to N-th diode series circuits is connected to a junction between the switching devices of a corresponding one of the first to N-th switching-device series circuits, and the junction between the diodes of each of the first to N-th diode series circuit is connected to an AC input terminal of a corresponding phase via a reactor. A junction between the switching devices of the N+1-th switching-device series circuit is connected to a junction between the two capacitors.
In the seventh aspect of the present invention, N+1 series circuits each comprising two switching devices are formed. The first to N+1-th switching-device series circuits are connected together in parallel, and a diode is connected inversely in parallel to each switching device. The cathodes of the diodes of parallel-connection circuits of the first to N+1-th switching-device series circuits are connected to a positive DC output terminal via a diode, and the anodes of the diodes of the parallel-connection circuits of the first to N+1-th switching-device series circuits are connected to a negative DC output terminal via a diode. Two capacitors are connected in series between the positive and negative DC output terminals. A junction between the switching devices of each of the first to N-th switching-device series circuits is connected to an AC input terminal of a corresponding phase via a reactor. The junction between the switching devices of the N+1-th switching-device series circuit is connected to a junction between the two capacitors.
›SUMMARY OF THE INVENTION · 2 of 2
In the eighth aspect of the present invention, in the rectifying circuit according to any of the first to seventh aspects, detected voltage values for both capacitors connected between DC output terminals are fed back in response to each command value so that, on the basis of the deviation between the detected voltage values and the command value, the switching devices present in the corresponding charging paths of the two capacitors are independently controlled to individually control the voltages at the two capacitors.
›BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a circuit diagram showing a first embodiment of a rectifying circuit according to the present invention;
FIG. 2 is a circuit diagram showing a second embodiment of the rectifying circuit according to the present invention;
FIG. 3 is a circuit diagram showing a third embodiment of the rectifying circuit according to the present invention;
FIG. 4 is a circuit diagram showing a fourth embodiment of the rectifying circuit according to the present invention;
FIG. 5 is a view showing a configuration of a control circuit for controlling the rectifying circuit according to the present invention;
FIG. 6 is a circuit diagram showing a fifth embodiment of the rectifying circuit according to the present invention;
FIG. 7 is a circuit diagram showing a sixth embodiment of the rectifying circuit according to the present invention;
FIG. 8 is a circuit diagram showing a seventh embodiment of the rectifying circuit according to the present invention;
FIGS. 9 ( a ) and 9 ( b ) are explanatory diagrams of the operations of the fifth to seventh embodiments of the rectifying circuits according to the present invention;
FIG. 10 is a circuit diagram showing a first embodiment of a control method according to the present invention;
FIG. 11 is a circuit diagram showing an eighth embodiment of the rectifying circuit according to the present invention;
FIG. 12 is a circuit diagram showing a second embodiment of the control method according to the present invention;
FIG. 13 is a circuit diagram showing a ninth embodiment of the rectifying circuit according to the present invention; and
FIG. 14 is a circuit diagram showing a conventional technique.
›DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS · 1 of 5
Embodiments of the present invention will be described below with reference to the drawings. First, FIG. 1 shows a first embodiment of a rectifying circuit according to the present invention, corresponding to the embodiment set forth in the first aspect. In FIG. 1, R, S and T denote AC input terminals, P and N denote DC output terminals; L 1 , L 2 and L 3 denote reactors; S 1 to S 6 denote switching devices composed of MOSFETS; D 1 to D 12 denote diodes; C 1 and C 2 denote capacitors connected together in series between the DC output terminals P and N; and 101 , 201 and 301 denote bi-directional switch circuits.
The bi-directional switch circuits 101 , 201 and 301 have the same configurations. For example, the switch circuit 101 comprises a series circuit of the switching devices S 1 and S 2 , and a series circuit of the diodes D 1 and D 2 , the series circuits being connected together in parallel. The junction between the switching devices S 1 and S 2 is connected to one end of the reactor L 1 , and the junction between the diodes D 1 and D 2 is connected to the junction between the capacitors C 1 and C 2 . The opposite ends of the series circuit of the diodes D 1 and D 2 are connected to the corresponding ends of the series circuit of the capacitors C 1 and C 2 via the diodes D 7 and D 8 .
In addition, in other bi-directional switch circuits 201 and 301 , the opposite ends of the series circuit of the diodes D 3 and D 4 , and the opposite ends of the series circuit of the diodes D 5 and D 6 are connected to the corresponding ends of the series circuit of capacitors C 1 and C 2 via the diodes D 9 and D 10 , and diodes D 11 and D 12 , respectively. Furthermore, the junction between the diodes D 3 and D 4 and the junction between the diodes D 5 and D 6 are connected to the junction between the capacitors C 1 and C 2 .
Next, the operation of this circuit will be described. If, for example, the switching devices S 2 and S 3 are turned on, current flows through a path R→L 1 →S 2 →D 2 →D 3 →S 3 →L 2 →S→R to accumulate energy in the reactors L 1 and L 2 . When S 2 is turned off with S 3 on, current flows through a path R→L 1 →parasitic diode of S 1 →D 7 →C 1 →D 3 →S 3 →L 2 →S→R to charge the capacitor C 1 . On the other hand, when S 3 is turned off with S 2 on, current flows through a path R→L 1 →S 2 →D 2 →C 2 →D 10 →parasitic diode of S 4 →L 2 →S→R to charge the capacitor C 2 . Moreover, when S 2 and S 3 are simultaneously turned off, current flows through a path R→L 1 →parasitic diode of S 1 →D 7 →C 1 →C 2 →D 10 →parasitic diode of S 4 →L 2 →S→R to simultaneously charge the capacitors C 1 and C 2 .
Repeating such a switching operation enables the AC voltage to be converted into a DC voltage while controlling the input current at a high power factor. In this embodiment, the number of the semiconductor devices (switching devices and diodes) through which current passes is four for storage of energy in the reactors and four for charging the capacitors C 1 or C 2 ; less than that in the prior art. Therefore, energy loss in the semiconductor devices can be reduced to increase efficiency, while the size and weight of cooling parts are reduced as well. The total number of the semiconductor devices is also reduced to make it possible to reduce the size, weight and cost of the apparatus.
FIG. 2 shows a second embodiment of a rectifying circuit according to the present invention, corresponding to the embodiment set forth in the second aspect. With respect to bi-directional switch circuits 102 , 202 and 302 of this embodiment, for example, the switch circuit 102 will be described. The switch circuit 102 comprises a series circuit of a diode D 1 and a switching device S 1 , and a series circuit of a diode D 2 and a switching device S 2 , the series circuits being connected together in parallel. The other switch circuits 202 and 302 have similar configurations. Further, the junction between the diode D 1 and the switching device S 1 is connected to one end of the reactor L 1 , and the junction between the diode D 2 and the switching device S 2 is connected to the junction between the capacitors C 1 and C 2 . Furthermore, both cathodes of the diodes D 1 and D 2 are connected to an anode of the diode D 7 , and both drains of the switching devices S 1 and S 2 are connected to a cathode of the diode D 8 . The remaining parts of the configuration are similar to those of the first embodiment.
Next, the operation of this embodiment will be described. If, for example, the switching devices S 1 and S 4 are turned on, current flows through a path R→L 1 →S 1 →parasitic diode of S 2 →S 4 →parasitic diode of S 3 →L 2 →S→R to accumulate energy in the reactors L 1 and L 2 . When S 1 is turned off with S 4 on, current flows through a path R→L 1 →D 1 →D 7 →C 1 →S 4 →parasitic diode of S 3 →L 2 →S→R to charge the capacitor C 1 . On the other hand, when S 4 is turned off with S 1 on, current flows through a path R→L 1 →S 1 →parasitic diode of S 2 →C 2 →D 10 →parasitic diode of S 3 →L 2 →S→R to charge the capacitor C 2 . Moreover, when S 1 and S 4 are simultaneously turned off, current flows through a path R→L 1 →D 1 →D 7 →C 1 →C 2 →D 10 →parasitic diode of S 3 →L 2 →S→R to simultaneously charge the capacitors C 1 and C 2 .
Also in this embodiment, repetition of the above switching operations enables the AC voltage to be converted into a DC voltage while controlling the input current at a high power factor. The number of the semiconductor devices through which current passes in order to accumulate energy in the reactor or charge the capacitors is also reduced to lessen energy losses in the semiconductor devices, thus making it possible to increase efficiency and reduce the size, weight and cost of cooling parts. FIG. 3 shows a third embodiment of the rectifying circuit according to the present invention, corresponding to the embodiment set forth in the third aspect. With respect to bi-directional switch circuits 103 , 203 and 303 of this embodiment, for example, the switch circuit 103 will be described. The switch circuit 103 comprises a series circuit of a switching device S 1 and a diode D 1 , and a series circuit of a switching device S 2 and a diode D 2 , the series circuits being connected together in parallel, as in the embodiment shown in FIG. 2 . In this embodiment, however, the switching devices S 1 and S 2 are connected to an upper arm, and the diodes D 1 and D 2 are connected to a lower arm. That is, both sources of the switching devices S 1 and S 2 are connected to an anode of a diode D 7 , and both anodes of the diodes D 1 and D 2 are connected to a cathode of a diode D 8 . The other switch circuits 203 and 303 have similar configurations.
›DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS · 2 of 5
Next, the operation of this embodiment will be described. If, for example, the switching devices S 2 and S 3 are turned on, current flows through a path R→L 1 →parasitic diode of S 1 →S 2 →parasitic diode of S 4 →S 3 →L 2 →S→R to accumulate energy in the reactors L 1 and L 2 . When the switching device S 2 is turned off with S 3 on, current flows through a path R→L 1 →parasitic diode of S 1 →D 7 →C 1 →parasitic diode of S 4 →S 3 →L 2 →S→R to charge the capacitor C 1 . On the other hand, when S 3 is turned off with S 2 on, current flows through a path R→L 1 →parasitic diode of S 1 →S 2 →C 2 →D 10 →D 3 →L 2 →S→R to charge the capacitor C 2 . Moreover, when S 2 and S 3 are simultaneously turned off, current flows through a path R→L 1 →parasitic diode of S 1 →D 7 →C 1 →C 2 →D 10 →D 3 →L 2 →S→R to simultaneously charge the capacitors C 1 and C 2 . This embodiment provides effects similar to those of the above embodiments.
FIG. 4 shows a fourth embodiment of a rectifying circuit according to the present invention, corresponding to the embodiment set forth in the fourth aspect. With respect to bi-directional switch circuits 104 , 204 and 304 of this embodiment, for example, a switch circuit 104 will be described. In the switch circuit 104 , the series circuit of the switching devices S 1 and S 2 and the series circuit of the diodes D 1 and D 2 of the embodiment shown in FIG. 1 are replaced with each other, and the junction between the diodes D 1 and D 2 is connected to one end of the reactor L 1 , whereas the junction between the switching devices S 1 and S 2 is connected to the junction between the capacitors C 1 and C 2 . This also applies to other switches 204 and 304 .
Next, the operation of this embodiment will be described. If, for example, the switching devices S 1 and S 4 are turned on, current flows through a path R→L 1 →D 1 →S 1 →S 4 →D 4 →L 2 →S→R to accumulate energy in the reactors L 1 and L 2 . When S 1 is turned off with S 4 on, current flows through a path R→L 1 →D 1 →D 7 →C 1 →S 4 →D 4 →L 2 →S→R to charge the capacitor C 1 . On the other hand, when S 4 is turned off with S 1 on, current flows through a path R→L 1 →D 1 →S 1 →C 2 →D 10 →D 4 →L 2 →S→R to charge the capacitor C 2 . Moreover, when S 1 and S 4 are simultaneously turned off, current flows through a path R→L 1 →D 1 →D 7 →C 1 →C 2 →D 10 →D 4 →L 2 →S→R to simultaneously charge the capacitors C 1 and C 2 . This embodiment provides effects similar to those of each of the above embodiments.
Next, FIG. 5 shows a control circuit applicable to the above-described rectifying circuits shown in FIGS. 1 to 4 and in FIGS. 6 to 8 , which will be described later. In FIG. 5, reference numeral 400 denotes a control circuit, reference numeral 401 denotes sine-wave instructing means, reference numeral 402 denotes phase-detection means, reference numerals 403 to 406 denote PI regulation means, reference numerals 407 to 409 denote comparison means, reference numerals 410 to 415 denote AND operation means, and reference numeral 416 denotes gate-driving means.
Next, the operation of this control circuit will be described. The sine-wave instructing means 401 produces sine-wave instructions VR, VS and VT, the phases of which synchronize with the input voltages of corresponding phases, and the phase-detection means 402 produces signals RP, RN, SP, SN, TP and TN synchronized with the polarities of the input voltages. Further, a DC output voltage VC 1 detected from a main circuit is minor-fed back to a command value and multiplied by the sine-wave instructions VR, VS and VT via the PI regulation means 403 . The results of these multiplication operations and input currents IR, IS and IT of the corresponding phases detected from the main circuit are minor-fed back to the multiplication results and compared with a carrier signal by the comparison means 407 to 409 via the PI regulation means 404 to 406 , to obtain PWM signals.
Furthermore, the operation means 410 to 415 perform AND operations on the signals RP, RN, SP, SN, TP and TN synchronized with the input voltages and the PWM signals to create control signals for the switching devices S 1 to S 6 via the gate-driving means 416 . In this case, the control signal for the switching device S 1 is created on the basis of the comparison between the negative synchronizing signal RN of an R phase and the PWM signal, and the control signal for the switching device S 2 is created on the basis of a comparison between the positive synchronizing signal RP of the R phase and the PWM signal. Similarly, the control signal for the switching device S 3 is created on the basis of a comparison between the negative synchronizing signal SN of an S phase and the PWM signal, and the control signal for the switching device S 4 is created on the basis of a comparison between the positive synchronizing signal SP of the S phase and the PWM signal. Additionally, the control signal for the switching device S 5 is created on the basis of a comparison between the negative synchronizing signal TN of a T phase and the PWM signal, and the control signal for the switching device S 6 is created on the basis of a comparison between the positive synchronizing signal TP of the T phase and the PWM signal.
In this manner, the minor feedback control allows the input current to be controlled as a sine waveform synchronized with the input voltage, and, in turn, allows the output voltage to be controlled as a fixed DC voltage. Consequently, the AC voltage can be converted into a DC voltage while the input current is controlled at a high power factor.
The switching devices of the bi-directional switch circuits 101 to 104 , 201 to 204 , and 301 to 304 in the embodiments shown in FIGS. 1 to 4 may comprise IGBTs (insulated gate bipolar transistors) instead of the MOSFETs. In this case, the control circuit shown in FIG. 5 is applicable, but the outputs from the gate-driving means 416 corresponding to the switching devices of the different phases must be changed to those given in parentheses shown in FIG. 5 . For example, for the S phase, the control signal for S 1 is created on the basis of a comparison between the positive synchronizing signal RP of the R phase and the PWM signal, and the control signal for S 2 is created on the basis of a comparison between the negative synchronizing signal RP of the R phase and the PWM signal.
›DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS · 3 of 5
FIG. 6 shows a fifth embodiment of the rectifying circuit according to the present invention. In this figure, bi-directional switch circuits 105 , 205 and 305 comprise thyristers TH 1 , TH 2 and TH 3 instead of the diodes D 1 , D 3 and D 5 in the embodiment shown in FIG. 2 . The remaining parts of the configuration are the same as in FIG. 2 .
For example, in the embodiment shown in FIG. 2, if the voltages at the opposite ends (DC output terminals P and N) of the series circuit of the capacitors C 1 and C 2 are not equal to or greater than the input-line voltage before the power supply is turned on, when the power supply is turned on, current flows through a path R→L 1 →D 1 →D 7 →C 1 →C 2 →D 10 →parasitic diode of S 3 with the timing shown in FIG. 9 ( a ), to charge the capacitors C 1 and C 2 . This may cause an excessive rush current I to flow as shown in FIG. 9 ( a ), thereby damaging the apparatus.
Thus, in the fifth embodiment, the diodes D 1 , D 3 and D 5 shown in FIG. 2 are replaced with the thyristers TH 1 , TH 2 and TH 3 , and the thyrister TH 1 is turned on when the input-line voltage VRS is zero or close to zero as shown in FIG. 9 ( b ). The other thyristers TH 2 and TH 3 are turned on when the input-line voltages VST and VTR are zero or close to zero. If, for example, the thyrister TH 1 is turned on when the VRS is close to zero, the capacitors C 1 and C 2 can be gradually charged to restrain an excessive rush current. Furthermore, if the thyristers TH 2 and TH 3 are turned on after the voltages at the capacitors have been saturated, the process can be changed to an operation similar to that in the embodiment shown in FIG. 2 .
FIG. 7 shows a sixth embodiment of the rectifying circuit according to the present invention, and FIG. 8 shows a seventh embodiment. In these embodiments, the diodes D 1 , D 3 and D 5 of the embodiment shown in FIGS. 3 and 4 are replaced with the thyristers TH 1 , TH 2 and TH 3 . In FIGS. 7 and 8, reference numerals 106 , 107 , 206 , 207 , 306 and 307 denote bi-directional switch circuits. Also in the sixth and seventh embodiments, a rush current can be prevented from flowing into the capacitors by means of the phase of the power-supply potential. The embodiments shown in FIGS. 6 to 8 correspond to that of the present invention set forth in the fifth aspect.
FIG. 10 shows an embodiment of a control method according to the present invention, corresponding to an embodiment set forth in the eighth aspect. This control circuit is applicable to control the rectifying circuits shown in FIGS. 1 to 4 and 6 to 8 . For example, for the rectifying circuit shown in FIG. 1, this control circuit individually controls the voltages at the capacitors C 1 and C 2 by varying on/off pulse widths for the upper switching devices S 1 , S 3 and S 5 of the bi-directional switch circuits 101 , 201 and 301 so as to control the voltage at the capacitor C 1 , while varying on/off pulse widths for the lower switching devices S 2 , S 4 and S 6 so as to control the voltage at the capacitor C 2 . This serves to balance the capacitor voltages in order to prevent an intolerable voltage from being applied to the capacitors or semiconductor devices.
In FIG. 10, reference numeral 430 denotes a control circuit, reference numeral 401 denotes sine-wave instructing means, reference numeral 402 denotes phase-detection means, reference numerals 403 to 406 and 417 to 420 denote PI regulation means, reference numerals 407 to 409 and 421 to 423 denote comparison means, reference numerals 410 to 415 denote AND operation means, and reference numeral 416 denotes gate-driving means.
Next, the operation of this control circuit will be described. The sine-wave instructing means 401 produces sine-wave instructions VR, VS and VT, the phases of which synchronize with input voltages of the corresponding phases, and the phase-detection means 402 produces the signals RP, RN, SP, SN, TP and TN synchronized with the polarities of the input voltages. Further, the DC output voltage VC 1 detected from the main circuit is minor-fed back to the command value and multiplied by the sine-wave instructions VR, VS and VT via the PI regulation means 417 . Furthermore, the DC output voltage VC 2 detected from the main circuit is minor-fed back to the command value and multiplied by the sine-wave instructions VR, VS and VT via the PI regulation means 403 .
The results of these multiplication operations and the input currents IR, IS and IT of the corresponding phases detected from the main circuit are minor-fed back to the multiplication results and compared with the carrier signal by the comparison means 407 to 409 via the PI regulation means 404 to 406 , to obtain PWM signals for the switching devices S 2 , S 4 and S 6 . The input currents IR, IS and IT are also compared with the carrier signal by the comparison means 421 to 423 via the PI regulation means 418 to 420 , to obtain PWM signals for the switching devices S 1 , S 3 and S 5 . Furthermore, the operation means 410 to 415 perform AND operations on the signals RP, RN, SP, SN, TP and TN synchronized with the input voltages and the PWM signals to create control signals for the switching devices S 1 to S 6 via the gate-driving means 416 . For example, the control circuit 430 operates so that the pulse width for the switching device S 3 increases when the voltage at the capacitor C 1 decreases, and decreases when the voltage at the capacitor C 1 increases. Thus, the charging current for the capacitor C 1 flowing through a path R→L 1 →parasitic diode of S 1 →D 7 →C 1 →D 3 →S 3 →L 2 →S→R varies to maintain the voltage at the capacitor C 1 at a fixed value. Further, the control circuit 430 operates so that the pulse width for the switching device S 2 increases when the voltage at the capacitor C 2 decreases, and decreases when the voltage at the capacitor C 2 increases. Thus, a charging current for the capacitor C 2 flowing through a path R→L 1 →S 2 →D 2 →C 2 →D 10 →parasitic diode of S 4 →L 2 →S→R varies to maintain the voltage at the capacitor C 2 at a fixed value. Such operations enable the voltages at the capacitors C 1 and C 2 to be individually controlled.
›DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS · 4 of 5
Also in this embodiment, the minor feedback control allows the input current to be controlled as a sine waveform synchronized with the input voltage, and in turn, allows the output voltage to be controlled as a fixed DC voltage. Consequently, the AC voltage can be converted to a DC voltage while the input current is controlled at a high power factor.
FIG. 11 shows an eighth embodiment of the rectifying circuit according to the present invention, corresponding to the embodiment set forth in the sixth aspect. Although an embodiment shown in FIGS. 11 to 13 , which will be described later, shows an example in which IGBTs are used as the switching devices, MOSFETs can be used in these places. In FIG. 11, a series circuit of diodes D 1 and D 2 , a series circuit of diodes D 3 and D 4 , a series circuit of diodes D 5 and D 6 , and a series circuit of capacitors C 1 and C 2 are connected together in parallel. Further, a series circuit of switching devices S 1 and S 2 , a series circuit of switching devices S 3 and S 4 , a series circuit of switching devices S 5 and S 6 , and a series circuit of switching devices S 7 and S 8 are connected together in parallel. Diodes D 7 to D 14 are connected to the switching devices S 1 to S 8 inversely in parallel.
The junction between the diodes D 1 and D 2 is connected to one end of the reactor L 1 and to the junction between the switching devices S 1 and S 2 , the junction between the diodes D 3 and D 4 is connected to one end of the reactor L 2 and to the junction between the switching devices S 3 and S 4 , and the junction between the diodes D 5 and D 6 is connected to one end of the reactor L 3 and to the junction between the switching devices S 5 and S 6 . Further, the junction between the switching devices S 7 and S 8 is connected to the junction between the capacitors C 1 and C 2 .
Next, the operation of this embodiment will be described. If, for example, the switching device S 1 is turned on, current flows through a path R→L 1 →S 2 →D 10 , D 12 →L 2 , L 3 →S, T→R to accumulate energy in the reactors L 1 , L 2 and L 3 . Then, when the switching device S 2 is turned off, current flows through a path R→L 1 →D 1 →C 1 →C 2 →D 4 , D 6 →L 2 , L 3 →S, T→R to charge the capacitors C 1 and C 2 . At this time, if the switching device S 7 is on, current flows through a path R→L 1 →D 7 →S 7 →C 2 →D 4 , D 6 →L 2 , L 3 →S, T→R to charge the capacitor C 2 . On the other hand, if the switching device S 8 is on, current flows through a path R→L 1 →D 1 →C 1 →S 8 →D 10 , D 12 →L 2 , L 3 →S, T→R to charge the capacitor C 1 .
Repeating such a switching operation enables the AC voltage to be converted into a DC voltage while the input current is controlled at a high power factor. Further, when the on/off pulse widths for the switching devices S 7 and S 8 are adjusted, the voltages at the capacitors C 1 and C 2 can be individually controlled so as to be balanced, thereby preventing the voltages at the semiconductor devices or capacitors from exceeding their tolerable voltages. Moreover, the number of semiconductor devices (switching devices and diodes) through which current passes is two for the storage of energy in the reactors, two for the simultaneous charging of the capacitors C 1 and C 2 , and three for the charging of one of the capacitors. Consequently, as compared to the prior art, energy losses can be reduced to increase efficiency, while reducing the size, weight and costs of cooling parts.
FIG. 12 is a circuit diagram showing an embodiment of the control method according to the present invention, corresponding to the embodiment set forth in the eighth aspect. This control circuit is applicable to the rectifying circuits shown in FIGS. 11 and 13, which will be described later. In FIG. 12, reference numeral 440 denotes a control circuit, reference numeral 441 denotes sine-wave instructing means, reference numerals 442 and 443 denote PI regulation means, reference numerals 444 to 448 denote comparison means, and reference numeral 449 denotes gate-driving means.
Next, the operation of this control circuit will be described. The voltages VC 1 and VC 2 at the capacitors C 1 and C 2 detected from the main circuit are minor-fed back to the command values, deviations obtained are added via the PI regulation means 442 , and the result of the addition is multiplied by the sine-wave instructions VR, VS and VT to modulate the amplitudes of the sine-wave instructions. Further, an output signal from the PI regulation means 442 is compared with the carrier signal by the comparison means 447 and 448 to obtain PWM signals, from which control signals for the switching devices S 7 and S 8 are created via the gate-driving means 449 .
Furthermore, the input currents of the corresponding phases detected from the main circuit are minor-fed back to the sine-wave instructions with the amplitude thereof modulated, and the deviations obtained are input to the PI regulation means 443 and then compared with the carrier signal by the comparison means 444 to 446 to obtain PWM signals, from which control signals for the switching devices S 1 to S 6 are created via the gate-driving means 449 . In this manner, the minor feedback control allows the input current to be controlled as a sine waveform synchronized with the input voltage. The minor feedback control also enables the output voltage between the terminals P and N to be controlled as a fixed DC value, and the voltages at the capacitors C 1 and C 2 can be individually controlled. For example, the voltage at the capacitor C 1 can be set at a predetermined value by controlling the on/off pulse width for the switching device S 8 to control the charging current therefor, and the voltage at the capacitor C 2 can be set at a predetermined value by controlling the on/off pulse width for the switching device S 7 to control the charging current therefor. FIG. 13 shows a ninth embodiment of the rectifying circuit according to the present invention, corresponding to the embodiment set forth in the seventh aspect. The configuration of this embodiment will be described in comparison with FIG. 11 . That is, the diodes D 1 to D 6 shown in FIG. 11 are removed, and a circuit connected parallel comprising a series circuit of switching devices S 1 and S 2 , a series circuit of switching devices S 3 and S 4 , a series circuit of switching devices S 5 and S 6 , and a series circuit of switching devices S 7 and S 8 is connected to DC output terminals P and N via diodes D 1 and D 2 , respectively.
›DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS · 5 of 5
Next, the operation of this embodiment will be described. If, for example, the switching device S 2 is turned on, current flows through a path R→L 1 →S 2 →D 10 , D 12 →L 2 , L 3 →S, T→R to accumulate energy in the reactors L 1 , L 2 , and L 3 . Then, when the switching device S 2 is turned off, current flows through a path R→L 1 →D 7 →D 1 →C 1 →C 2 →D 2 →D 10 , D 12 →L 2 , L 3 →S, T→R to charge the capacitors C 1 and C 2 . At this time, if the switching device S 7 is on, current flows through a path R→L 1 →D 7 →S 7 →C 2 →D 2 →D 4 , D 6 →L 2 , L 3 →S, T→R to charge the capacitor C 2 . On the other hand, if the switching device S 8 is on, current flows through a path R→L 1 →D 7 →D 1 →C 1 →S 8 →D 10 , D 12 →L 2 , L 3 →S, T→R to charge the capacitor C 1 .
Repetition of such a switching operation enables the AC voltage to be converted into a DC voltage while the input current is controlled at a high power factor. Further, when the on/off pulse widths for the switching devices S 7 and S 8 are adjusted, the voltages at the capacitors C 1 and C 2 can be individually controlled so as to be balanced, thereby preventing the voltages at the semiconductor devices or capacitors from exceeding their tolerable voltages. In this embodiment, the number of semiconductor devices (switching devices and diodes) through which current passes increases as compared to that in FIG. 11, but the number of diodes within the entire circuit can be reduced by four, thus reducing the number of parts required and the size and weight of the circuit.
In the above embodiments, the 3-phase AC voltage is converted into DC voltage, but the present invention is generally applicable to the rectifying circuit that converts an N-phase (N denotes a natural number equal to or greater than 2) AC voltage into a DC voltage.
As described above, according to the rectifying circuit of the present invention, the number of the semiconductors through which current passes in order to accumulate energy in the reactors or charge the capacitors can be reduced as compared to that of the prior art. Therefore, energy loss and the number of the parts of the semiconductor device can be reduced to reduce the size, weight and price of the entire apparatus, including the cooling device. Moreover, according to the control method of the present invention, the voltages at the output capacitors can be individually controlled to protect the semiconductor devices or capacitors from overvoltage.
While the invention has been explained with reference to the specific embodiments of the invention, the explanation is illustrative and the invention is limited only by the appended claims.
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6 codes- H02M7/12
- H02M7/23
- H02M7/217
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