Semiconductor integrated circuit having an integrated resistance region

The present application is based on Japanese priority application No. 2000-085323 filed on Mar. 24, 2000, the entire contents of which are hereby incorporated by reference.

The present invention generally relates to semiconductor devices and more particularly to a semiconductor integrated circuit including a resistance region formed on a substrate integrally with an active device and a fabrication process thereof.

Generally, semiconductor devices are provided in the form of a semiconductor integrated circuit in which active devices such as transistors are formed on a substrate monolithically together with passive devices including resistances and/or capacitances.

In the fabrication process of semiconductor integrated circuits, it is preferable that these passive devices are formed simultaneously with the active devices, without increasing the number of the fabrication steps. Further, it is preferable that the active devices are formed with minimum size for maximizing the operational speed thereof.

FIGS. 1A and 1B are diagrams showing the construction of a compound semiconductor integrated circuit device 10 of a related art in which a hetero-bipolar transistor (HBT) and a cooperating resistance element are integrated, wherein FIG. 1A shows the semiconductor integrated circuit in a plan view, while FIG. 1B shows the semiconductor integrated circuit in a cross-sectional view taken along a line 1 - 1 ′ of FIG. 1 A.

Referring to the cross-sectional view of FIG. 1B, it can be seen that a semi-insulating GaAs substrate 11 is provided with a collector layer 11 A of n-type GaAs, and a base layer 12 of thin p-type GaAs is formed epitaxially on the semi-insulating GaAs substrate 11 . Further, an emitter layer 13 of n + -type GaInP is formed on the base layer 12 epitaxially.

The substrate 11 is divided into an active device region 10 A and a resistance-element region 10 B by a device-isolation trench 11 B, wherein it can be seen that a device-isolation region 11 C of high resistance is formed inside the device-isolation trench 11 B by an ion implantation process. Thus, the device-isolation trench 11 B thus formed defines the mesa structure for the active device region 10 A and also the mesa structure for the resistance-element region 10 B.

In the active device region 10 A, it should be noted that the emitter layer 13 forms an emitter pattern of a reduced lateral size on the base layer 12 so as to minimize the base-emitter capacitance, and a ring-shaped base electrode 15 A is formed on the surface of the base layer 12 thus exposed as represented in FIG. 1 A. Further, an emitter electrode 14 is formed on the emitter pattern 13 , wherein the emitter electrode 14 extends laterally as a result of the lateral etching process applied to the emitter pattern 13 for reducing the size, and hence the area, thereof. Thereby, the emitter electrode 14 forms an overhang structure on the emitter pattern 13 .

On the resistance-element region 10 B, on the other hand, electrodes 15 C and 15 D are formed on the same base layer 12 . Thereby, there is formed a resistance element having a resistor body provided by the base layer 12 and the electrodes 15 C and 15 D as terminals. In the description hereinafter, the resistance element thus formed in the region 10 B will be designated also by a numeral 10 B. Similarly, the HBT formed on the active region 10 A will be designated also by a numeral 10 A.

In such a semiconductor integrated circuit of FIGS. 1A and 1B, it is preferable to form the resistance element and the active device simultaneously by a common process. Thus, there is proposed a process to form the base electrode 15 A of the HBT 10 A and the electrodes 15 C and 15 D of the resistance element 10 B simultaneously.

In more detail, deposition of a conductive layer constituting the base electrode 15 A is made on the active device region 10 A while using the emitter electrode 14 as a mask, after the step of forming the emitter pattern 13 on the base layer 12 and after the step of forming the emitter electrode. As a result of the deposition of the conductive layer thus conducted while using the emitter electrode 14 as a self-alignment mask, an electrode pattern 15 B of the same composition as the base electrode 15 A is formed also on the emitter electrode 14 .

As a result of the deposition of the conductive layer, the electrodes 15 C and 15 D are formed at the same time, as noted previously. In view of the fact that the electrodes 15 C and 15 D are used as the different terminals of the resistance element, it is necessary that the electrodes 15 C and 15 D are isolated from each other, and thus, it has been necessary to apply a patterning process using a mask for forming the electrodes 15 C and 15 D.

In view of the circumstances noted above, it has been necessary to use a mask having mask openings P 1 -P 3 corresponding respectively to the electrode patterns 15 A, 15 C and 15 D as represented in FIG. 2A for patterning the electrodes 15 C and 15 D, while no such a mask is actually needed for patterning the base electrode 15 A. It should be noted that the emitter electrode 14 can be used as a self-aligned mask during the process of forming base electrode 15 A of the HBT 10 A.

In the fabrication process of the semiconductor integrated circuit 10 of the related art, it should be noted that another mask process, using a mask pattern having mask openings Q 1 and Q 2 respectively corresponding to the mesa region 10 A and the mesa region 10 B represented in FIG. 2B, is necessary for forming the device isolation trench 11 B.

Thus, the fabrication process of the semiconductor integrated circuit 10 of the related art includes two different mask processes, one using the mask pattern of FIG. 2A for forming the electrodes 15 A, 15 C and 15 D, and the other using the mask pattern of FIG. 2B for forming the mesa regions 10 A and 10 B.

In such a process that uses two different mask processes, there inevitably arises the problem of mask misalignment. Thus, in order to tolerate possible mask misalignment, it has been necessary to secure a sufficiently large area for the mesa regions 10 A and 10 B, while such an increase of the mesa area invites unwanted increase of parasitic capacitance and resultant decrease of the operational speed of the HBT. In FIGS. 1A and 1B it should be noted that the drawings represent resist patterns 16 A and 16 B that are formed by the mask pattern of FIG. 2B, wherein the resist pattern 16 A corresponds to the resist opening Q 1 while the resist pattern 16 B corresponds to the resist opening Q 2 .

The foregoing problem of increased parasitic capacitance of HBT may be eliminated when a self-alignment mask similar to that used for the active device region 10 A is provided also in the resistance-element region 10 B and make the electrodes 15 C and 15 D separate as a result of use of such a self-alignment mask. In this case, the mask process for patterning the electrodes 15 C and 15 D by using the mask of FIG. 2A can be omitted. Thus, when successful, such a process would minimize the area of the HBT 10 A and simultaneously simplify the fabrication process of the semiconductor integrated circuit 10 .

FIGS. 3A-3C represents the case of fabricating a semiconductor integrated circuit device by using a self-alignment mask also in the resistance-element region 10 B according to the foregoing approach. It should be noted that FIGS. 3A-3C merely represent one possible option of eliminating the problem pertinent to the fabrication process of the semiconductor integrated circuit 10 of FIGS. 1A and 1B and does not represent a known or prior art process. In FIGS. 3A-3C, those parts corresponding to the parts described previously are designated by the same reference numerals and the description thereof will be omitted.

Referring to FIGS. 3A and 3B, it can be seen that the resistance-element region 10 B of the semiconductor integrated circuit 10 now includes a dummy emitter region 13 A having a reduced lateral size, and a dummy-emitter electrode 14 A corresponding to the emitter electrode 14 is formed on the dummy emitter region 13 A so as to form an overhang structure.

According to the process of FIGS. 3A and 3B, a conductive layer is deposited on the base layer 12 in correspondence to the resistance-element region 10 B simultaneously to the step of forming the base electrode 15 A of the HBT 10 A, while using the dummy-emitter electrode 14 A as a self-alignment mask. As a result of use of the self-alignment mask 14 A, the deposited conductive layer form the electrode 15 C at one side of the mask 14 A and the electrode 15 D at the other side of the mask 14 A. In order to assume separation of the electrodes 15 C and 15 D from each other, the dummy-emitter electrode 14 A is formed to have a width slightly larger than the width of the electrodes 15 C or 15 D. Associated with the formation of the electrodes 15 C and 15 D, a dummy electrode pattern 15 E having a substantially identical composition with the electrodes 15 C and 15 D is formed on the dummy-emitter electrode 14 A.

After formation of the base electrode 15 A and the terminal electrodes 15 C and 15 D, the mesa regions 10 A and 10 B are formed by an ion milling process or a dry etching process while using a resist mask including resist patterns Q 1 and Q 2 respectively in correspondence to the mesa regions 10 A and 10 B as represented in FIG. 3 C.

According to such an approach, it is no longer necessary to use two masks in two separate steps and the area of the active device region 10 A for the HBT should be minimized.

However, the semiconductor integrated circuit thus formed by the process of FIGS. 3A and 3B has a serious problem of a conductive pattern 15 X which may be formed so as to surround the mesa region 10 B as represented in FIGS. 4A-4C associated with the patterning step of forming the mesa region for the resistance-element region 10 B. Thus, there is a substantial risk in such a semiconductor integrated circuit that the resistance element cause short-circuit. In FIGS. 4A-4C, it should be noted that those parts corresponding to the parts described previously are designated by the same reference numerals and the description thereof will be omitted. In the drawings, it should be noted that FIG. 4A represents the resistance-element region 10 B in a plan view while FIG. 4B represents the same resistance-element region 10 B in a cross-sectional view taken along a line A-A′ in FIG. 4 A. Further, FIG. 4C represents the resistance-element region 10 B in a cross-sectional view taken along a line B-B′ represented in FIG. 4 C.

Referring to FIGS. 4A-4C. it should be noted that the mesa patterning process using the resist pattern 16 B may cut a part of the electrode patterns 15 C and 15 D as represented in FIG. 4 B. In such a case, the conductive pattern 15 X can be formed on the sidewall of the mesa structure 10 B as a patterning residue as represented in FIGS. 4A and 4C. As noted previously, such a patterning residue 15 X can cause the problem of short-circuit of the electrodes 15 C and 15 D.

Accordingly, it is a general object of the present invention to provide a novel and useful semiconductor integrated circuit wherein the foregoing problems are eliminated.

Another and more specific object of the present invention is to provide a semiconductor integrated circuit device having an active device and a resistance element formed monolithically on a substrate wherein the area of the active device is minimized and the risk of short-circuit of the resistance element is eliminated at the same time.

Another object of the present invention is to provide a semiconductor integrated circuit device, comprising:

a substrate carrying thereon an epitaxial layer;

a resistance element formed on a first region of said epitaxial layer; and

an active device formed on a second region of said epitaxial layer,

said first and second regions comprising first and second mesa regions respectively,

said first region carrying at least a first electrode defined by first and second, mutually opposing sidewalls and a second electrode defined by third and fourth, mutually opposing sidewalls,

said first and second sidewalls of said first electrode being in a relationship with respect to a sidewall of said first mesa region such that each of said first and second sidewalls is offset away from a hypothetical extension of said sidewall of said first mesa region in an inward direction of said first mesa region,

said fourth sidewall of said second electrode being in a flush relationship with said sidewall of said first mesa region.

Another object of the present invention is to provide a semiconductor integrated circuit device, comprising:

a substrate carrying thereon an epitaxial layer;

a resistance element formed on a first region of said epitaxial layer;

an active device formed on a second region of said epitaxial layer, said first and second regions comprising first and second mesa regions respectively;

a dummy pattern provided over said first mesa region such that said dummy pattern includes therein one or more openings with a separation from a mesa sidewall defining said first mesa structure;

a first electrode provided on said epitaxial layer in correspondence to said opening; and

a second electrode provided on said epitaxial layer outside of said dummy pattern.

Another object of the present invention is to provide a semiconductor integrated circuit device, comprising:

a substrate carrying thereon an epitaxial layer;

a resistance element formed on a first region of said epitaxial layer;

an active device formed on a second region of said epitaxial layer, said first and second regions comprising first and second mesa regions respectively;

a dummy pattern provided over said first mesa region such that said dummy pattern extends across a lateral boundary of said first mesa region at one or more locations;

a first electrode provided on said first mesa region at a first side of said dummy pattern; and

a second electrode provided on said first mesa region at a second, opposite side of said dummy pattern,

said dummy pattern forming a closed ring-shaped pattern.

Another object of the present invention is to provide a method of fabricating a semiconductor integrated circuit device, comprising the steps of:

forming a semiconductor layer and a first metal layer consecutively on a base layer formed epitaxially on a substrate;

patterning said first metal layer and said semiconductor layer consecutively to form a bipolar transistor in a first region of said base layer and a dummy pattern on a second region of said base layer, such that said bipolar transistor comprises an emitter layer formed from said semiconductor layer and an emitter electrode formed from said metal layer and such that said dummy pattern comprises a dummy emitter layer formed from said semiconductor layer and a dummy emitter electrode formed from said metal layer;

depositing a second metal layer on said base layer so as to cover said first and second regions while using said emitter electrode in said first region as a self-alignment mask and using said dummy emitter electrode in said second region as a self-alignment mask; and

forming a first mesa structure in said first region and a second mesa structure in said second region while using a mask having a first mask opening corresponding to said first region and a second mask opening corresponding to said second region.

According to the present invention, it is possible to form at least one of the electrodes constituting a terminal of a resistance element in a resistance-element region in such a manner that the electrode is offset away from the sidewall surface of the mesa structure that provides the resistance-element region. In such a construction, the problem of short circuit of the resistance element is positively eliminated even in such a case in which a patterning residue remains on the mesa sidewall surface at the time of self-aligned patterning process of the electrodes of the resistance terminals, which is conducted by using a dummy pattern as a self-alignment mask. The process of forming such a dummy pattern can be conducted simultaneously to the process of forming an emitter electrode. Thus, the process of the present invention can avoid extraneous process steps.

Other objects and further features of the present invention will become apparent from the following detailed description when read in conjunction with the attached drawings.

FIGS. 1A and 1B are diagrams showing the construction of a semiconductor integrated circuit device according to a related art;

FIGS. 2A and 2B are diagrams showing a mask used in the fabrication process of the semiconductor integrated circuit device of FIGS. 1A and 1B;

FIGS. 3A-3C are diagrams showing a possible improvement of the semiconductor integrated circuit device of FIGS. 1A and 1B;

FIGS. 4A-4C are diagrams showing the problems predicted in the semiconductor integrated circuit of FIGS. 3A-3C;

FIGS. 5A-5C are diagrams showing the construction of a semiconductor integrated circuit device according to a first embodiment of the present invention;

FIGS. 6A-6E are diagrams showing the fabrication process of the semiconductor integrated circuit device of the first embodiment;

FIGS. 7A-7C are diagrams showing the construction of a semiconductor integrated circuit according to a second embodiment of the present invention;

FIGS. 8A and 8B are diagrams showing the construction of a semiconductor integrated circuit according to a third embodiment of the present invention;

FIGS. 9A and 9B are diagrams showing the construction of a semiconductor integrated circuit according to a fourth embodiment of the present invention; and

FIGS. 10A-10D are diagrams showing the construction of a semiconductor integrated circuit according to a fifth embodiment of the present invention.

First Embodiment

FIGS. 5A-5C show the construction of a semiconductor integrated circuit device 20 according to a first embodiment of the present invention, wherein FIG. 5A shows the semiconductor integrated circuit device 20 in a plan view while FIG. 5B shows the semiconductor integrated circuit device 20 in a cross-sectional view taken along a line 5 - 5 ′ of FIG. 5 A.

Referring to FIG. 5A, a semi-insulating GaAs substrate 21 is covered with a collector layer 21 A of n-type GaAs and a thin base layer 22 of p-type GaAs is formed on the collector layer 21 A epitaxially. Further, an emitter pattern 23 E of n + -type GaInP is formed on the base layer 22 epitaxially.

The substrate 21 includes an active device region 20 A and a resistance-element region 20 B divided from each other by a device isolation trench 21 B, and the active device region 20 A and the resistance-element region 20 B thus defined by the device isolation trench 21 B form respective mesa structures. Although not illustrated, there is provided a collector contact layer of n + -type underneath the active device region in the form of a buried layer.

In the active device region 20 A, it should be noted that the emitter pattern 23 E forms reduced size area (designated hereinafter as “emitter pattern 23 ”) so as to minimize the base-emitter parasitic capacitance, and a ring-shaped base electrode 25 A is formed on the exposed surface of the base layer 22 similarly to the base electrode 15 A of FIG. 1 A. Further, an emitter electrode 24 E is formed on the emitter pattern 23 E noted above. As a result of the lateral etching process applied to the emitter pattern 23 E for reducing the lateral size thereof, the emitter electrode 24 E extends laterally beyond the outer periphery of the emitter pattern 23 E and forms an overhang structure. It should be noted that the emitter electrode 24 E is used also for the self-alignment mask at the time of forming the base electrode 25 A. In the present embodiment, a conductive layer 25 B substantially identical in composition with the base electrode 25 A is deposited on the emitter electrode 24 E at the time of forming the base electrode 25 A while using the emitter electrode 24 E as the self-aligned mask.

In the resistance-element region 20 B, on the other hand, electrodes 25 C and 25 D are formed on the same base layer 22 , and thus, there is formed a resistance element in the resistance-element region 20 B such that the resistance element has terminals provided by the electrodes 25 C and 25 D and the resistance medium provided by the base layer 22 . In the description hereinafter, the resistance element thus formed in the resistance-element region 20 B will be referred to also by the same reference numeral 20 B and the HBT formed in the active device region 20 A will be referred to also by the same reference numeral 20 A.

As will be understood from FIGS. 5A and 5B, there is formed a dummy emitter pattern 23 DM in the resistance-element region 20 B in correspondence to the emitter pattern 23 E formed in the active device region 20 A. Similarly, a dummy emitter electrode 24 DM is formed on the dummy emitter pattern 23 DM in correspondence to the emitter electrode 24 E. The electrodes 25 C and 25 D are formed in correspondence to openings 24 Ma and 24 Mb formed in the dummy pattern 24 M respectively. The dummy emitter electrode 24 DM carries thereon a conductive layer 25 DM in correspondence to the conductive layer 25 B. In such a structure, there is formed a resistance element between the electrodes 25 C and 25 D with the resistance body provided by the base layer 22 .

It should be noted that the structure of FIGS. 5A and 5B further includes resist patterns 26 A and 26 B formed by a mask having mask openings MA and MB represented in FIG. 5C such that the resist pattern 26 A corresponds to the mask opening MA and the resist pattern 26 B corresponds to the mask opening MB. By patterning the structure the base layer 22 including the conductive layer thereon, the collector layer 21 A underneath the base layer 22 and further a part of the substrate 21 while using the resist patterns 26 A and 26 B as an etching mask, it can be seen that there is formed a first mesa structure in correspondence to the active device region 20 A and a second mesa structure in correspondence to the resistance-element region 20 B. In the description hereinafter, the first mesa region may be designated also by the reference numeral 20 A and the second mesa region may be designated also by the reference numeral 20 B.

As a result of the formation of the first and second mesa structures 20 A and 20 B conducted by using the mask of FIG. 5C, it can be seen that the base electrode 25 A is formed on the mesa structure 20 A with a ring-shaped form surrounding the emitter electrode 24 as represented in the plan view of FIG. 5 A. On the mesa structure 20 B, on the other hand, there is formed a ring-shaped conductive pattern 25 E as a result of the patterning process with a composition identical with those of the electrodes 25 C and 25 D such that the ring-shaped conductive pattern 25 E extends along the sidewall surface of the mesa structure 20 B.

In the semiconductor integrated circuit 20 of the present embodiment, it should be noted that not only the base electrode 25 A but also the electrodes 25 C and 25 D of the resistance element are formed as a result of the self-alignment process. Thus, there is no need of employing a mask process other than the mask process for forming the mesa structures 20 A and 20 B. Further, it should be noted that there is no need of securing a tolerance for possible mask misalignment, and the area of the mesa region 20 A on which the HBT is to be formed can be successfully minimized.

In the structure of FIGS. 5A and 5B, there is a possibility that a conductive residue is formed on the mesa sidewall surface associated with the patterning process of the electrode 25 E at the time of formation of the mesa region 20 B conducted by an ion milling process. However, such a formation of the patterning residue does not cause a problem at all in the present embodiment as the electrodes 25 C and 25 D of the resistance element are formed on the inner area of the mesa region 20 B at the location away from the mesa sidewall surface. Further, it is possible to form the resistance element between the electrode 25 C or 25 D and the electrode 25 E.

FIGS. 6A-6E show the fabrication process of the semiconductor integrated circuit device of the present embodiment. In the drawings, those parts corresponding to the parts described previously are designated by the same reference numerals and the description thereof will be omitted.

Referring to FIG. 6A, the collector layer 21 A of n-type GaAs is formed on the semi-insulating substrate 21 epitaxially, and the base layer 22 of p-type GaAs is formed on the collector layer 21 A epitaxially. Further, the emitter layer 23 of n + -type InGaP is formed on the base layer 22 epitaxially, and the emitter layer 23 is covered by the electrode layer 24 .

Next, in the step of FIG. 6B, resist patterns RA and RB are formed on the electrode layer 24 by a resist process respectively in corresondence to the active device region 20 A and the resistance-element region 20 B, and the electrode layer 24 and the underlying emitter layer 23 are patterned while using the resist patterns RA and RB as a mask. As a result of the patterning process, the emitter pattern 23 E and the emitter electrode 24 E are formed in the device region 20 A and the dummy emitter electrode 24 DM and the dummy emitter pattern 23 DM are formed in the resistance-element region 20 B.

The left drawing of FIG. 6B represents the dummy emitter electrode 24 DM thus formed in a plan view. As can be seen from FIG. 6B, the dummy emitter electrode 24 DM includes the openings 24 Ma and 24 Mb so as to expose the surface of the base layer 22 .

After the formation of the emitter pattern 23 E and the dummy emitter pattern 23 DM, the emitter pattern 23 E and the dummy emitter pattern 23 DM are subjected to a lateral etching process.

Next, in the step of FIG. 6C, the resist patterns RA and RB are removed and the conductive layer 25 is deposited on the base layer 22 while using the emitter electrode 24 E and the dummy emitter electrode 24 DM as a self-alignment mask. As a result, the conductive layer 25 is formed on the base layer 22 at both lateral sides of the emitter electrode 24 E in the active device region 20 A. In the resistance-element region 20 B, on the other hand, the conductive layer 25 forms a uniform conductive layer outside the dummy-emitter electrode 24 DM. In the inner side of the dummy-emitter electrode 24 DM, the electrodes 25 C and 25 D are formed in correspondence to the openings 24 Ma and 24 Mb of FIG. 6B in a self-alignment manner.

Associated with the deposition of the conductive layer 25 , the conductive pattern 25 B and the conductive pattern 25 DM are formed respectively on the emitter electrode 24 and on the dummy-emitter electrode 24 DM.

Next, in the step of FIG. 6D, the mask of FIG. 5C is used and the resist patterns 26 A and 26 B are formed respectively on the active device region 20 A and on the resistance-element region 20 B. Thereby, it should be noted that the electrodes 25 C and 25 D are completely included in the resist pattern 26 B together with the dummy-emitter pattern 24 DM.

Next, in the step of FIG. 6E, an ion milling process or a dry etching process is applied while using the resist patterns 26 A and 26 B as a mask, and the first and second mesa structures are formed respectively in correspondence to the active device region 20 A and the resistance-element region 20 B. As a result of formation of the mesa structures, the conductive layer 25 also undergoes patterning and the base electrode 25 A is formed in the active device region 20 A. In the resistance-element region 20 B, the ring-shaped electrode 25 E is formed.

As explained previously, the semiconductor integrated circuit device 20 of the foregoing construction is free from the problem of the short circuit of the resistance element even in such a case a conductive residue is deposited on the sidewall surface of the mesa structure 20 B due to the fact that the electrodes 25 C and 25 D of the resistance element are formed inside the area of the mesa structure 20 B with an offset from the mesa sidewall surface. Further, it is possible to form a resistance element R′ between the electrode 25 E and the electrode 25 C or 25 D as represented in FIG. 6 D.

In view of the fact that the base electrodes 25 A and the electrodes 25 C and 25 D are formed in a self-alignment process, there is no additional mask process other than the mask process for forming the mesa structure, contrary to the fabrication process of the semiconductor integrated circuit 10 of the related art, and there is no need for alignment of the masks. Thus, the present invention can successfully minimize the area of the mesa region, and hence the base-collector capacitance in the active device region 20 A.

Second Embodiment

FIGS. 7A and 7B show the construction of a semiconductor integrated circuit device 30 according to a second embodiment of the present invention respectively in a plan view and in a cross-sectional view. FIGS. 7A and 7B show in particular the construction of the resistance-element region 20 B used therein. In the drawings, those parts corresponding to the parts described previously are designated by the same reference numerals and the description thereof will be omitted.

Referring to FIGS. 7A and 7B, the present embodiment utilizes the electrode 25 E formed along the outer periphery of the mesa region 20 B also for the electrode of the resistance element, in addition to the electrode 25 C. Associated with this, the number of the dummy emitter electrodes 24 DM is reduced to two when viewed in the cross-section of FIG. 7B, contrary to the previous embodiment. Further, the number of the openings in the dummy-emitter electrode 24 DM is reduced to one.

In the present embodiment, an interlayer insulation film 27 is provided so as to cover the dummy-emitter electrode 24 DM and the conductive layer 25 DM thereon as represented in FIG. 7B, wherein the interlayer insulation film 27 is provided with contact holes 27 A and 27 B so as to expose the electrodes 25 C and 25 E respectively. Further, there is provided a conductor pattern 28 A on the interlayer insulation film 27 in contact with the electrode 25 C at the contact hole 27 A, and another conductor pattern 28 B is formed on the interlayer insulation film 27 in contact with the electrode 25 E at the contact hole 27 B.

In such a construction, too, there occurs no problem of short-circuit in the resistance element even in such a case a conductive patterning residue remains on the sidewall surface of the mesa region 20 B as the electrode 25 C is formed inside the mesa region 20 B.

FIGS. 7C shows an equivalent circuit diagram of the resistance element of FIGS. 7A and 7B.

As can be seen from FIG. 7C, a resistor having the electrodes 25 C and 25 E as terminals is obtained.

Third Embodiment

FIG. 8A represents the construction of a semiconductor integrated circuit device 40 according to a third embodiment of the present invention, particularly the construction of the resistance-element region 20 B used therein, while FIG. 8B shows the equivalent circuit of the resistance element formed in the resistance-element region 20 B. In the drawings, those parts corresponding to the parts described previously are designated by the same reference numerals and the description thereof will be omitted.

Referring to FIG. 8A, it can be seen that there is formed a pair of dummy-emitter electrodes 24 DM each having an opening on the resistance-device region 20 B of the mesa structure and that the electrodes 25 C and 25 D are formed in correspondence to these openings respectively.

The resistance-element device of FIG. 8A is also covered with an interlayer insulation film (not shown) similarly to the construction of FIG. 7B and a conductor pattern corresponding to the conductor pattern 28 A of FIG. 7B makes a contact with the electrode 25 C via a contact hole and a conductor pattern corresponding to the conductor pattern 28 B of FIG. 7B makes a contact with the electrode 25 E. Further, a conductor pattern corresponding to the conductor pattern 28 C makes a contact with the electrode 25 D via a contact hole.

As a result, there is formed a resistance element having an equivalent circuit diagram as represented in FIG. 8B, wherein it can be seen that two resistors each having a resistance body provided by the base layer 22 are connected in series.

Fourth Embodiment

FIG. 9A shows the construction of a semiconductor integrated circuit device 50 according to a fourth embodiment of the present invention, particularly to the construction of the resistance-element region 20 B used therein, while FIG. 9B shows the resistance element thus formed in the resistance-element region 20 B in an equivalent circuit diagram. In the drawings, those parts corresponding to the parts described previously are designated by the same reference numerals and the description thereof will be omitted.

Referring to FIG. 9A, it can be seen that a first ring-shaped dummy-emitter electrode ( 24 DM) 1 is provided on the mesa structure that constitutes the resistance-element region 20 B in such a manner that a single opening is formed inside the first ring-shaped electrode ( 24 DM) 1 , and a second ring-shaped electrode ( 24 DM) 2 having a single opening therein is provided inside the opening of the first ring-shaped electrode ( 24 DM) 1 in a concentric relationship with respect to the first ring-shaped electrode ( 24 DM) 1 . Thereby, the electrode 25 C now extends in a ring-shaped form in correspondence to the ring-shaped gap between the first ring-shaped dummy-emitter electrode ( 24 DM) 1 and the second ring-shaped dummy-emitter electrode ( 24 DM) 2 , and the electrode 25 D is now formed in correspondence to the foregoing central opening in the dummy-emitter electrode ( 24 DM) 2 .

It should be noted that the resistance element of FIG. 9A is covered also by an interlayer insulation film similar to that explained with reference to FIG. 7B, and a conductor pattern (not shown) on the interlayer insulation film makes a contact with the electrode 25 C via a corresponding contact hole. Further, another conductor pattern (not shown) on the interlayer insulation film makes a contact with the electrode 25 E via a contact hole, and a further conductor pattern (not shown) on the interlayer insulation film makes a contact with the electrode 25 D via a corresponding contact hole.

As a result, a resistance element having an equivalent circuit diagram as represented in FIG. 9B is obtained in which it can be seen that two resistors each having a resistance body provided by the base layer 22 are connected in series.

Fifth Embodiment

FIGS. 10A and 10B show the construction of a semiconductor integrated circuit device 60 according to a fifth embodiment of the present invention, particularly the construction of the resistance-element region 20 B used therein, wherein FIG. 10A shows the resistance-element region 20 B in a plan view taken along a line X-X′ while FIG. 10B shows the resistance-element region 20 B taken along a line Y-Y′. In the drawings, those parts corresponding to the parts described previously are designated by the same reference numerals and the description thereof will be omitted.

Referring to FIG. 10A, the dummy-emitter electrode 24 DM of the present embodiment is formed to have an elongated ring-shaped form and a first resistance element carrying the electrodes 15 C and 15 D and having the cross-section of FIG. 10B is formed so as to intersect with a part of the ring-shaped dummy-emitter electrode 24 DM. Further, there is formed a second resistance element carrying the electrode 25 C and 25 D and having the cross-section of FIG. 10C is formed with an offset from the first resistance element.

It should be noted that the cross-section of FIG. 10C corresponds to the cross-section of FIG. 7B explained previously, while the cross-section of FIG. 10B corresponds to the cross-section explained previously with reference to FIG. 3 B.

In the resistance element of FIG. 3B, there is a possibility of short circuit in the event there remains a conductive patterning residue on the sidewall surface of the mesa structure. In the resistance element of FIG. 10A, on the other hand, there occurs no such a short-circuit even when there remains a conductive residue, as the dummy-emitter electrode 24 DM forms a closed ring-shaped form dividing the interior region of the ring from the exterior region of the ring. Thus, even when a patterning residue remains on the inner mesa sidewall surface, the patterning residue is spatially as well as electrically isolated from the patterning residue on the outer mesa sidewall surface, and no problem of short-circuit is caused. Thus, there is provided a single resistor having terminals 15 C and 15 D as represented in the equivalent circuit diagram of FIG. 10 A.

It should be noted that the cross-sectional structure of FIG. 10C is distinct over the cross-sectional structure of FIG. 7B in the point that the ring-shaped electrode 25 E of FIG. 7B is now divided into a first electrode pattern 25 E 1 and a second electrode pattern 25 E 2 . Thus, there is formed another resistance element represented in FIG. 10D in which two resistors are connected in series.

In the present invention, it should be noted that the active device is by no means limited to an HBT as explained before, but other active devices including an ordinary bipolar transistor or an FET may be formed for the active device of the integrated circuit device.

Further, the present invention is not limited to the embodiments described heretofore, but various variations and modifications may be made without departing from the scope of the invention.