Electronic circuit and semiconductor device

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2020-044333, filed on Mar. 13, 2020, the entire contents of which are incorporated herein by reference.

Embodiments described herein relate generally to an electronic circuit and a semiconductor device, in particular a semiconductor storage device, equipped with the electronic circuit.

In a semiconductor device, particularly in a semiconductor storage device, in order to generate a voltage higher than the power supply voltage, a boosting operation using the power supply voltage may be performed with a charge pump circuit. Therefore, an electronic circuit that can appropriately perform the boosting operation using a power supply voltage is desired.

FIG. 1 is a diagram illustrating a configuration of a semiconductor device equipped with an electronic circuit according to an embodiment.

FIGS. 2A to 2B are diagrams illustrating a configuration of a memory cell array according to the embodiment.

FIG. 3 is a circuit diagram illustrating a configuration of the memory cell array according to the embodiment.

FIG. 4 is a circuit diagram illustrating a configuration of a charge pump circuit according to the embodiment.

FIG. 5 is a waveform diagram illustrating an operation of the charge pump circuit (when the output voltage is low) according to the embodiment.

FIGS. 6A to 6C are diagrams illustrating the operation of the charge pump circuit according to the embodiment.

FIG. 7 is a waveform diagram illustrating an operation of the charge pump circuit (when the output voltage is medium) according to the embodiment.

FIG. 8 is a waveform diagram illustrating an operation of the charge pump circuit (when the output voltage is high) according to the embodiment.

FIG. 9 is a circuit diagram illustrating a configuration of a charge pump circuit according to a first modification example of the embodiment.

FIG. 10 is a circuit diagram illustrating a configuration of a charge pump circuit according to a second modification example of the embodiment.

FIG. 11 is a circuit diagram illustrating a configuration of a charge pump circuit according to a third modification example of the embodiment.

FIGS. 12A to 12D are diagrams illustrating characteristics of the charge pump circuit according to the embodiment and the first to third modification examples thereof.

FIG. 13 is a circuit diagram illustrating a configuration of a charge pump circuit according to a fourth modification example of the embodiment.

In general, embodiments provide an electronic circuit that can appropriately perform a boosting operation using a power supply voltage, and a semiconductor device, in particular a semiconductor storage device, equipped with the electronic circuit.

According to one embodiment, an electronic circuit including a charge pump circuit is provided. The charge pump circuit includes a first transistor having a drain connected to an input node, and a source connected to a first node; a second transistor having a drain connected to the first node, and a source connected to an output node; a first capacitive element having one end connected to the first node, and the other end connected to a second node; a first inverter which includes an input node to which a clock signal is supplied and an output node which is connected to the second node via a first line; a first voltage detection circuit which includes an input node electrically connected to the first line; a third transistor having a source connected to a third node, and a drain connected to the second node; a second inverter which includes an input node which is electrically connected to the first voltage detection circuit and an output node which is connected to a fourth node via a second line; and a second capacitive element having one end connected to the fourth node and the other end connected to the third node.

Hereinafter, an electronic circuit and a semiconductor device equipped with the electronic circuit are described with reference to the drawings. The present disclosure is not limited to the disclosed embodiments.

(Embodiment)

The semiconductor device equipped with the electronic circuit according to the embodiment includes a charge pump circuit and may perform a boosting operation using a power supply voltage with a charge pump circuit in order to generate a voltage higher than the power supply voltage. The semiconductor device may be a semiconductor storage device including a memory cell array. For example, in the semiconductor storage device, in order to control a memory cell array at a voltage higher than the power supply voltage, a boosting operation using the power supply voltage with a charge pump circuit may be performed.

A semiconductor storage device 100 equipped with the electronic circuit according to the embodiment is, for example, a nonvolatile memory such as a NAND-type flash memory, and is configured as illustrated in FIG. 1 .

The semiconductor storage device 100 includes a memory cell array 130 and a peripheral circuit 150 .

The peripheral circuit 150 includes an I/O control unit 110 , a logical control unit 111 , a control unit 112 , a voltage generating circuit 113 , a command register 114 , an address register 115 , a status register 116 , a column address buffer 117 , a column decoder 118 , a data register 119 , a sense amplifier 120 , a row address buffer 121 , a row decoder 122 , a power supply circuit 141 , and a clock generation circuit 142 .

The logical control unit 111 receives inputs of various control signals via input pins of various control signals (such as CE and ALE). The I/O control unit 110 assigns registers of storage targets of I/O signals based on the control signals received by the logical control unit 111 . The logical control unit 111 transfers received control signals to the control unit 112 . The input pin CE (shown as/CE) of the logical control unit 111 is a chip enable pin of the semiconductor storage device 100 .

The control unit 112 controls all the operations of the semiconductor storage device 100 including an operation of a state transition circuit (state machine) that transitions a state based on the various control signals received via the logical control unit 111 .

The I/O control unit 110 is a buffer circuit for transmitting and receiving I/O signals and strobe signals to and from a controller (not shown) via I/O signal pins I/O 0 to I/O 7 and strobe pins DQS and /DQS. Commands, addresses, data (write data) obtained by the I/O control unit 110 as the I/O signals via the I/O signal pins I/O 0 to I/O 7 are distributed and stored in the address register 115 , the command register 114 , and the data register 119 , respectively.

The power supply circuit 141 receives, for example, power supply voltages Vcc, Vccq, and Vss from the controller via a power supply pin and supplies these voltages to each unit in the semiconductor storage device 100 . The power supply voltage Vccq is, for example, a power supply voltage used in the operation of the I/O control unit 110 . The power supply voltage Vss is, for example, a ground voltage.

The control unit 112 instructs a voltage value to be generated and a power supply timing to the voltage generating circuit 113 . The control unit 112 includes the clock generation circuit 142 . The clock generation circuit 142 supplies a clock signal CLK to, for example, a charge pump circuit 1 . In addition, the control unit 112 transmits a ready/busy signal R/B to the controller.

The voltage generating circuit 113 generates a voltage according to the control of the control unit 112 . The voltage generating circuit 113 includes the charge pump circuit 1 . The charge pump circuit 1 receives, for example, the power supply voltage Vcc from the power supply circuit 141 and receives the clock signal CLK from the clock generation circuit 142 . When generating a voltage higher than the power supply voltage Vcc, the voltage generating circuit 113 performs a boosting operation with the charge pump circuit 1 . The voltage generating circuit 113 generates a predetermined voltage by the boosting operation of the charge pump circuit 1 . The voltage generating circuit 113 supplies the generated voltage to the memory cell array 130 , the row decoder 122 , and the sense amplifier 120 .

For example, the voltage generating circuit 113 supplies a voltage of about 5 V to 10 V to the row decoder 122 during a read operation and supplies a voltage of about 15 V to 25 V to the row decoder 122 during a write operation. That is, the charge pump circuit 1 is used for generating output voltages of different levels.

The status register 116 stores status information indicating whether the writing to the memory cell array 130 has succeeded and status information indicating whether reading from the memory cell array 130 has succeeded. The status information is transmitted as a response signal to the controller by the I/O control unit 110 .

In the memory cell array 130 , a plurality of memory cells are arranged. The memory cell array 130 stores write data from a host (not illustrated).

The row decoder 122 , the column decoder 118 , and the sense amplifier 120 access the memory cell array 130 based on the control by the control unit 112 . The row decoder 122 selects a word line corresponding to a row address and activates the selected word line. The column decoder 118 selects a bit line corresponding to a column address and activates the bit line. The sense amplifier 120 applies a voltage to the bit line selected by the column decoder 118 and writes data stored in the data register 119 to a memory cell transistor positioned at an intersection of the word line selected by the row decoder 122 and the bit line selected by the column decoder 118 . The sense amplifier 120 reads the data stored in the memory cell transistor positioned at the intersection of the word line selected by the row decoder 122 and the bit line selected by the column decoder 118 via the bit line and stores the read data in the data register 119 . The data stored in the data register 119 is sent to the I/O control unit 110 through a data line and transferred to the outside of the I/O control unit 110 (for example, to a controller).

FIGS. 2A to 2B are diagrams illustrating a configuration of the memory cell array 130 . FIG. 2A is a perspective view illustrating a schematic configuration of the memory cell array 130 , and FIG. 2B is a cross-sectional view illustrating a schematic configuration of a part of memory cells MC of FIG. 2 A. In the example of FIGS. 2A to 2B , four layers of the memory cells MC are stacked, and the four memory cells MC are connected in series so that memory strings MS are formed. In FIGS. 2A to 2B , for the sake of simplicity, an interlayer insulating film formed between impurity-added silicon layers 2 via a diffusion preventing layer 3 is not depicted.

In FIGS. 2A to 2B , a source side select gate electrode SGS is formed on a semiconductor substrate SUB. Instead of the semiconductor substrate SUB, a conductive layer may be used. A plurality of layers of word lines are stacked on the source side select gate electrode SGS. In FIGS. 2A to 2B , an example in which four layers of word lines WL 0 to WL 3 are stacked is illustrated. Drain side select gate electrodes SGD 0 to SGD 3 are formed on the uppermost layer of the word line WL 3 .

An extending direction of the drain side select gate lines SGD 0 to SGD 3 may be referred to as a “row” direction. The row direction is orthogonal with respect to a stacking direction of the source side select gate line SGS, the word lines WL 0 to WL 3 , and the drain side select gate lines SGD 0 to SGD 3 .

Columnar bodies 12 are formed to penetrate the drain side select gate lines SGD 0 to SGD 3 , the word lines WL 0 to WL 3 , and the source side select gate electrode SGS. String units SU include the drain side select gate electrodes SGD 0 to SGD 3 , respectively. That is, the string unit SU is a unit that includes the plurality of memory strings MS arranged along the row direction and can be selectively accessed by the drain side select gate electrodes SGD 0 to SGD 3 .

Bit lines BL 0 to BL 2 are formed on the drain side select gate electrodes SGD 0 to SGD 3 . The extending direction of the bit lines BL 0 to BL 2 may be referred to as a “column” direction. The column direction is orthogonal with respect to the stacking direction of the source side select gate line SGS, the word lines WL 0 to WL 3 , and the drain side select gate lines SGD 0 to SGD 3 and orthogonal with respect to the row direction. The columnar body 12 extends, for example, from the semiconductor substrate SUB to the bit lines BL 0 to BL 2 .

The columnar body 12 is formed in a through via hole 4 penetrating the source side select gate electrode SGS, the word lines WL 0 to WL 3 , and the drain side select gate lines SGD 0 to SGD 3 . A columnar insulator 11 is formed in the center of the columnar body 12 . As a material of the columnar insulator 11 , for example, a silicon oxide film may be used.

The columnar insulator 11 is formed in the center of the columnar body 12 . As the material of the columnar insulator 11 , for example, a silicon oxide film may be used. A channel layer 7 is formed between the external surface of the columnar insulator 11 and the inner surface of the through via hole 4 ; a tunnel insulating film 8 is formed between the inner surface of the through via hole 4 and the channel layer 7 ; a charge trap layer 9 is formed between the inner surface of the through via hole 4 and the tunnel insulating film 8 ; and a block insulating film 6 is formed between the inner surface of the through via hole 4 and the charge trap layer 9 . For example, the channel layer 7 , the tunnel insulating film 8 , the charge trap layer 9 , and the block insulating film 6 are configured to penetrate the source side select gate electrode SGS, the word lines WL 0 to WL 3 , and the drain side select gate lines SGD 0 to SGD 3 , respectively. The channel layer 7 may include, for example, a semiconductor such as Si. The tunnel insulating film 8 and the block insulating film 6 may include, for example, a silicon oxide film. For example, a silicon nitride film or an ONO film (a three-layer structure of a silicon oxide film, a silicon nitride film, and a silicon oxide film) may be used for the charge trap layer 9 .

FIGS. 2A to 2B depict a configuration in which four layers of the memory cells MC are stacked, and n layers (n is an integer of two or more) of the memory cells MC may be stacked.

According to the embodiment of FIGS. 2A to 2B , the columnar insulator 11 is formed in the center of the columnar body 12 to penetrate the source side select gate electrode SGS, the word lines WL 0 to WL 3 , and the drain side select gate lines SGD 0 to SGD 3 , and a columnar semiconductor may be embedded instead of the columnar insulator 11 .

The memory cell array 130 includes a plurality of blocks. Each block includes a plurality of memory cells at an intersecting position of a plurality of word lines and a plurality of bit lines. FIG. 3 is a circuit diagram illustrating a configuration example of one block.

A block BLK includes the plurality of string units SU 0 to SU 3 . The plurality of string units SU 0 to SU 3 each include a corresponding one of drain side select gate lines SGD 0 to SGD 3 and share the source side select gate line SGS. The string units SU 0 to SU 3 can be selectively accessed by the drain side select gate lines SGD 0 to SGD 3 . Each of the string units SU 0 to SU 3 includes the plurality of memory strings MS.

Each of the memory strings MS includes, for example, 64 memory cell transistors MT (MT 0 to MT 63 ) and select transistors SDT and SST. The memory cell transistor MT includes a control gate and a charge storage film, and stores data in a nonvolatile manner. Also, the 64 memory cell transistors MT (MT 0 to MT 63 ) are connected in series between the source of the select transistor SDT and the drain of the select transistor SST. The number of the memory cell transistors MT in the memory strings MS is not limited to 64.

Bit lines BL 0 to BLp (denoted by BL when each bit line is not distinguished from one another) are connected to the memory strings MS. When the select transistor SDT is turned on, a channel area of each of the memory cell transistors MT in the memory strings MS is electrically connected to the bit line BL. Among a plurality of sense amplifiers SA 0 to SAp in a sense amplifier circuit SAC, the corresponding sense amplifier SA is connected to each of the bit lines BL.

Word lines WL 0 to WL 63 (denoted by WL when each word line is not distinguished from one another) commonly connect control gates of the memory cell transistors MT between the memory strings MS in each of the string units SU in each of the physical blocks BLK. That is, the control gates of the memory cell transistors MT which are in the same row across all of the string units SU in the physical block BLK are connected to the same word line WL. That is, the string unit SU of the physical block BLK includes a plurality of memory cell groups MCG corresponding to the plurality of word lines WL, and each of the memory cell groups MCG includes (p+1) memory cell transistors MT connected to the same word line WL. When each of the memory cell transistors MT is configured to store a value of 1 bit (when the memory cell transistor MT is operated in a single-level cell (SLC) mode), the (p+1) memory cell transistors MT connected to the same word line WL (that is, the memory cell group MCG) are handled as one physical page, and a data write operation and a data read operation are performed for each physical page.

Each of the memory cell transistors MT may be configured to store a value of a plurality of bits. For example, when each of the memory cell transistors MT is configured to store a value of n (n≥2) bits, the storage capacity per the word line WL becomes the same as the size for n physical pages. That is, each of the memory cell groups MCG is handled as n physical pages. For example, in a multi-level cell (MLC) mode in which each of the memory cell transistors MT stores a value of 2 bits, data for two physical pages is stored in the memory cell transistors connected to each of the word lines WL. Otherwise, in a triple-level cell (TLC) mode in which each of the memory cell transistors MT stores a value of 3 bits, data for three physical pages is stored in the memory cell transistors connected to each of the word lines WL.

As illustrated in FIG. 1 , the voltage generating circuit 113 of the semiconductor storage device 100 includes the charge pump circuit 1 . The charge pump circuit 1 is a circuit that can generate a voltage, for example, higher than the power supply voltage Vcc. Generally, the power supply voltage of the semiconductor storage device 100 is about several volts. In contrast, the semiconductor storage device 100 may use a voltage of about ten to several tens of volts in a read operation, a write operation, and an erasing operation.

Here, for example, during the read operation, the voltage of about 5 V to 10 V is supplied from the voltage generating circuit 113 to the row decoder 122 . For example, during the write operation, the voltage of about 15 V to 25 V is supplied from the voltage generating circuit 113 to the row decoder 122 . Therefore, it is required that the charge pump circuit 1 can generate output voltages of different levels.

The charge pump circuit is configured, for example, by connecting capacitive elements and rectifying elements in multiple stages. With respect to the input voltage, a larger output voltage can be obtained by increasing the number of connection stages of the capacitive elements and the rectifying elements. For example, by the connection of the capacitive elements and the rectifying elements in N stages (N is an integer of 2 or more), the voltage corresponding to N+1 times the power supply voltage, can be generated.

However, in order to satisfy the output voltage range required by the specification of the charge pump circuit, when the number of connection stages in the charge pump circuit is simply increased, current consumption which is unnecessary may occur. An operation of the charge pumps of N stages corresponds to the preparation and the cascade connection of N sets of the charge pumps of a single stage, and at this time, the same charge and discharge currents of the capacitive elements are generated in the N sets for outputting a certain current, so there is current efficiency. For example, when the output voltage of the charge pump circuit is low (for example, when an output voltage corresponding to one to two times the power supply voltage may be obtained), a desired output voltage can be obtained by using only the capacitive element for one stage. However, in the case of the cascade connection of N stages, since it is required to transfer the current to the output end via all the capacitive elements for N stages, unnecessary current consumption is generated by the charge and discharge of the capacitive elements for (N−1) stages. Therefore, in order to provide a highly effective charge pump circuit, it is required to perform the operation in the appropriate number of stages according to the voltage required at the output end.

Here, according to the present embodiment, by enabling the number of stages of the capacitive elements and the rectifying elements used in the charge pump circuit 1 to be dynamically changed, the current efficiency of the charge pump circuit 1 is improved.

Specifically, the charge pump circuit 1 is configured as a series boost type in which a voltage detection circuit is added between the capacitive elements of the plurality of stages. That is, an intermediate node to which one end of the capacitive element of the first stage is connected is connected to an output node via a diode-connected transistor (which is equivalently, a diode). The charge pump circuit 1 charges the other end of the capacitive element of the first stage with electric charges for a predetermined period. At this time, the voltage detection circuit detects the voltage of the other end of the capacitive element of the first stage. If the output voltage is low, the diode-connected transistor is easily turned on, and a current path from the diode-connected transistor to the output node via the capacitive element of the first stage, is generated. In order to raise the voltage of the other end of the capacitive element of the first stage, it is required to supply electric charges transferred from the one end to the output node. Therefore, the capacitive load at the other end of the capacitive element of the first stage becomes large, and the time constant becomes large such that the electric charge is charged at a low speed. Since the electric charge is charged at the low speed with the large time constant at the other end of the capacitive element of the first stage, the detected voltage of the voltage detection circuit does not exceed the threshold voltage for a predetermined period, and the voltage detection circuit maintains outputting a signal in a non-active level to thereby deactivate the capacitive element of the second stage. A boosting operation using the capacitive element of one stage (of one step) is performed without using the capacitive element of the second stage. If the output voltage is raised, the diode-connected transistor is less likely to be turned on, and the current flowing from one end of the capacitive element of the first stage to the output node becomes smaller. In addition, the capacitive load at the other end becomes smaller, and the time constant becomes small such that the electric charge is charged at a high speed. Since the electric charge is charged at the high speed with the small time constant at the other end of the capacitive element of the first stage, the detected voltage of the voltage detection circuit exceeds the threshold voltage within the predetermined period, and the voltage detection circuit outputs a signal of an active level according to the detected voltage to thereby activate the capacitive element of the second stage. In the capacitive element of the second stage, one end is connected to the other end of the capacitive element of the first stage via the transfer transistor. If the capacitive element of the second stage is activated, the charge pump circuit 1 charges the other end of the capacitive element of the second stage with the electric charge, turns on the transfer transistor, and transfers the voltage accumulated in the capacitive element of the second stage to the other end of the capacitive element of the first stage. Therefore, a boosting operation of two steps using the capacitive elements of two stages is performed. As a result, since the charge pump circuit 1 can dynamically adjust the number of stages of the capacitive element and the number of steps of the boosting operation used according to the magnitude of the output voltage, the operation of the extra capacitive element can be prevented, and the generation of the excessive power consumption can be prevented. Therefore, the current efficiency of the charge pump circuit 1 can be improved.

Specifically, the charge pump circuit 1 may be configured as illustrated in FIG. 4 . FIG. 4 is a circuit diagram illustrating a configuration of the charge pump circuit 1 . The charge pump circuit 1 includes a transistor Tr 1 , a transistor Tr 2 , a capacitive element C 1 , a charge and discharge circuit 2 , a voltage detection circuit 10 , a transistor Tr 3 , a transistor Tr 62 , a capacitive element C 2 , and a charge and discharge circuit 3 .

The transistor Tr 1 and the transistor Tr 2 are electrically connected in series between an input node Nin and an output node Nout of the charge pump circuit 1 . The input node Nin is a node to which the power supply voltage Vcc is supplied. The output node Nout is a node to which a load circuit, which is to be an output target of the charge pump circuit 1 (for example, the row decoder 122 illustrated in FIG. 1 ), is electrically connected.

The transistor Tr 1 and the transistor Tr 2 are respectively diode-connected. The transistor Tr 1 is configured, for example, with an NMOS transistor, a gate and a drain are electrically connected to each other and also electrically connected to the input node Nin, and a source is electrically connected to a node N 1 . The transistor Tr 1 functions as a diode having a direction from the input node Nin to the node N 1 as a forward direction. The transistor Tr 2 is configured, for example, with an NMOS transistor, a gate and a drain are electrically connected to each other and connected to the node N 1 , and a source is electrically connected to the output node Nout. The transistor Tr 2 functions as a diode having a direction from the input node N 1 to the output node Nout as a forward direction.

The capacitive element C 1 functions as the capacitive element of the first stage in the charge pump circuit 1 . The capacitive element C 1 is disposed between the node N 1 and a node N 2 . In the capacitive element C 1 , one end is electrically connected to the node N 1 , and the other end is electrically connected to the node N 2 .

In the charge and discharge circuit 2 , an input node is electrically connected to a clock node N CLK of the charge pump circuit 1 , and an output node is electrically connected to the node N 2 . The clock node N CLK is a node to which the clock signal CLK is supplied. The charge and discharge circuit 2 supplies the electric charge to the node N 2 by using the power supply voltage Vcc. The charge and discharge circuit 2 can charge the other end of the capacitive element C 1 to the power supply voltage Vcc.

The charge and discharge circuit 2 includes an inverter INV 1 and a transistor Tr 61 . The inverter INV 1 includes an input node INV 1 a and an output node INV 1 b . The input node INV 1 a is electrically connected to the clock node N CLK , and the clock signal CLK is supplied thereto. The output node INV 1 b can be connected to the node N 2 via a line L 1 and the transistor Tr 61 and is electrically connected to the node N 2 when the transistor Tr 61 is turned on.

The inverter INV 1 includes a transistor Tr 11 and a transistor Tr 12 . The transistor Tr 11 and the transistor Tr 12 are connected to each other via an inverter. The transistor Tr 11 is, for example, a PMOS transistor, having a source connected to the power supply voltage Vcc, a drain connected to the output node INV 1 b , and a gate connected to the input node INV 1 a . The transistor Tr 12 is, for example, an NMOS transistor, having a source connected to a ground voltage, a drain connected to the output node INV 1 b , and a gate connected to the input node INV 1 a.

The transistor Tr 61 is, for example, an NMOS transistor, having a source connected to the output node INV 1 b , a drain connected to the node N 2 , and a gate to which a predetermined signal is supplied. For example, the predetermined signal supplied to the gate of the transistor Tr 61 is a signal obtained from the clock signal CLK. More specifically, when the clock signal CLK is in a period of the L level, the predetermined signal becomes an active level (for example, a voltage of Vcc+Vth), and when the clock signal CLK is in a period of the H level, the predetermined signal becomes a non-active level (for example, a ground voltage).

The transistor Tr 61 has a function of alleviating a voltage load applied to the transistor Tr 11 and the transistor Tr 12 and improving breakdown voltage characteristics of the circuit. The transistor Tr 61 has a function of preventing backflow of the current from the node N 2 to the inverter INV 1 .

The voltage detection circuit 10 includes an input node 10 a and an output node 10 b . The input node 10 a is electrically connected to a signal line L 1 and is connected, for example, to a node between the output node INV 1 b and the transistor Tr 61 in the signal line L 1 . The voltage detection circuit 10 can detect a voltage of the other end of the capacitive element C 1 via the voltage of the signal line L 1 . The output node 10 b is electrically connected to the charge and discharge circuit 3 . The voltage detection circuit 10 can supply the detection result to the charge and discharge circuit 3 .

The voltage detection circuit 10 is configured, for example, as an inverter INV 11 . The inverter INV 11 includes an input node INV 11 a and an output node INV 11 b . The input node INV 11 a is connected to the input node 10 a , and the output node INV 11 b is connected to the output node 10 b.

The transistor Tr 3 is disposed between the node N 2 and a node N 3 . The transistor Tr 3 functions as a transfer transistor for transferring the electric charge from the node N 3 to the node N 2 . The transistor Tr 3 is, for example, a PMOS transistor, having a source connected to the node N 3 , and a drain connected to the node N 2 .

The transistor Tr 62 functions as a transistor for initializing the node N 3 to a voltage Vcc. The transistor Tr 62 is, for example, an NMOS transistor, having a gate connected to the clock node N CLK , a source connected to the power supply voltage Vcc, and a drain connected to the node N 3 .

The capacitive element C 2 functions as a capacitive element of the second stage in the charge pump circuit 1 . The capacitive element C 2 is disposed between the node N 3 and a node N 4 . In the capacitive element C 2 , one end is electrically connected to the node N 3 , and the other end is electrically connected to the node N 4 . One end of the capacitive element C 2 can be connected to the other end of the capacitive element C 1 via the transistor Tr 3 and the node N 2 .

The charge and discharge circuit 3 includes an input node 3 a , an input node 3 b , and an output node 3 c . The input node 3 a is electrically connected to the output node 10 b of the voltage detection circuit 10 . The input node 3 b is electrically connected to the clock node N CLK . The output node 3 c is electrically connected to the node N 4 via a line L 2 . The charge and discharge circuit 3 can charge the other end of the capacitive element C 2 with the electric charge according to the detection result of the voltage detection circuit 10 .

The charge and discharge circuit 3 includes an OR gate OR 1 and an inverter INV 2 . In the OR gate OR 1 , a first input node is electrically connected to the input node 3 a , a second input node is electrically connected to the input node 3 b , and an output node is electrically connected to the inverter INV 2 . The inverter INV 2 includes an input node INV 2 a and an output node INV 2 b . The input node INV 2 a is electrically connected to the output of the OR gate OR 1 , and the output node INV 2 b is electrically connected to the line L 2 via the output node 3 c.

The inverter INV 2 includes a transistor Tr 21 and a transistor Tr 22 . The transistor Tr 21 and the transistor Tr 22 are connected to each other via an inverter. The transistor Tr 21 is, for example, a PMOS transistor, having a source connected to a power supply node INV 2 b , a drain connected to an output node INV 2 c , and a gate connected to the input node INV 2 a . The transistor Tr 22 is, for example, an NMOS transistor, having a source connected to a ground voltage, a drain connected to the output node INV 2 c , and a gate connected to the input node INV 2 a.

In the configuration illustrated in FIG. 4 , in the charge pump circuit 1 , the number of stages of the operation can be dynamically adjusted as illustrated in FIGS. 5 to 8 . FIG. 5 is a waveform diagram illustrating an operation of the charge pump circuit (when the output voltage is low). FIGS. 6A to 6C are diagrams illustrating the operation of the charge pump circuit. FIG. 7 is a waveform diagram illustrating an operation of the charge pump circuit (when the output voltage is medium). FIG. 8 is a waveform diagram illustrating an operation of the charge pump circuit (when the output voltage is high).

In the operation according to the present embodiment, as illustrated in FIG. 5 , one cycle of the clock signal CLK includes an initialization phase ϕ 1 and a transfer phase ϕ 2 . The initialization phase ϕ 1 is a period when the clock signal CLK is maintained to be at the H level, and the transfer phase ϕ 2 is a period when the clock signal CLK is maintained to be at the L level. In the initialization phase ϕ 1 , one end of the capacitive elements C 1 and C 2 of each stage (a terminal on the upper side in FIG. 4 ) is connected to the power supply voltage Vcc, and the other end (a terminal on the lower side in FIG. 4 ) is connected to a ground, respectively. In the transfer phase ϕ 2 , if the other end of the capacitive element is boosted to a voltage higher than the power supply voltage Vcc, the voltage of the one end of the capacitive element is raised, and the electric charge is transferred from the output node Nout to the output target.

For example, when a load of an output voltage Vout is small and is about equal to the power supply voltage Vcc (e.g., about 1.25 in FIG. 5 ), the charge pump circuit 1 operates as illustrated in FIG. 5 .

In a timing t 1 when the initialization phase ϕ 1 starts, if the clock signal CLK transitions from the L level to the H level, the transistor Tr 11 is turned off as illustrated in FIG. 6A , and the transistor Tr 12 is turned on. The transistor Tr 61 is turned on, and the electric charge of the node N 2 is discharged to the ground voltage via the transistor Tr 61 and the transistor Tr 12 . In addition, the voltage of the node N 2 decreases from the level of about the power supply voltage Vcc. At this time, the capacitive element C 1 maintains the stored voltage, and thus the voltage of the node N 1 decreases from the level of the output voltage Vout.

At a timing t 2 illustrated in FIG. 5 , the voltage of the node N 2 decreases to the ground voltage Vss and is maintained to be at the ground voltage Vss. According to this, the capacitive element C 1 maintains the stored voltage, and thus the voltage of the node N 1 decreases to the level slightly lower than the power supply voltage Vcc. While the transistor Tr 2 is maintained to be in the off state, the transistor Tr 1 is turned on, and thereafter, the voltage of the node N 1 returns to the level of the power supply voltage Vcc. For simplification of the example, the threshold voltage of the transistor Tr 2 is assumed to be set at a sufficiently low level.

In the initialization phase ϕ 1 , since the transistor Tr 3 is maintained to be in the off state, and the transistor Tr 62 is maintained to be in the on state, and the node N 3 is maintained to be at the level of the power supply voltage Vcc. Since the clock signal CLK is at the H level, and the OR gate OR 1 outputs the H level, the transistor Tr 21 is turned off, and the transistor Tr 22 is turned on. Therefore, the node N 4 is maintained to be at the ground voltage Vss.

At a timing t 3 when the transfer phase ϕ 2 starts, if the clock signal CLK transitions from the H level to the L level as illustrated in FIG. 5 , the transistor Tr 11 is turned on and the transistor Tr 12 is turned off, as illustrated in FIG. 6B . The transistor Tr 61 is turned on, and the electric charge is charged at the node N 2 via the transistor Tr 11 and the transistor Tr 61 in accordance with the power supply voltage Vcc. In addition, the voltage of the node N 2 is raised from the ground voltage Vss. The capacitive element C 1 maintains the stored voltage, and thus the voltage of the node N 1 is raised from the power supply voltage Vcc.

According to this, at a timing t 4 , the capacitive element C 1 maintains the stored voltage, and the voltage of the node N 1 is raised to a level higher than the output voltage Vout, but the transistor Tr 2 (which is equivalently, a diode) is turned on, and a part of the electric charge starts to be transferred from one end of the capacitive element C 1 to the output node Nout side. Therefore, the current path is generated from the power supply voltage Vcc to the output node Nout via the line L 1 and the capacitive element C 1 , and the transistor Tr 2 .

For the period of the timings t 4 to t 5 , in order to raise the voltage of the node N 2 , it is required to supply the current transferred to the output node Nout side, and thus, the capacitive load in the node N 2 becomes large. Consequently, the time constant becomes large, and the capacitive element C 1 is charged at a low speed. Simultaneously, the voltage of the node N 1 is discharged from the level higher than the output voltage Vout to the output voltage Vout. The electric charge of the node N 1 stored in the capacitive element C 1 is transferred to the output node Nout side via the transistor Tr 2 . At this time, if the charging speed of the capacitive element C 1 is low, and the voltage of the node N 2 does not reach the set voltage, the voltage detection circuit 10 (the inverter INV 11 ) continuously outputs the signal of the H level. Then, the OR gate OR 1 also continuously outputs the H level, such that the transistor Tr 21 is turned off, and the transistor Tr 22 is turned on. Accordingly, the node N 4 is maintained to be at the ground voltage Vss. At this time, the transistor Tr 3 is turned off. Therefore, the voltages of the node N 3 and the node N 4 do not change together, and the capacitive element C 2 remains deactivated.

The boosting operation of one step using the capacitive element C 1 of one stage is performed without using the capacitive element C 2 of the second stage. In the operation of FIG. 5 , the charge pump operates as a charge pump of one stage for the relatively long period of the timings t 4 to t 5 to output the current.

After the timing t 5 , an operation which is the same as the operation for the timings t 1 to t 5 is performed.

For example, when the output voltage Vout is higher and about 1.5 times (about 1.65 times in FIG. 7 ) the power supply voltage Vcc, the charge pump circuit 1 operates as illustrated in FIG. 7 .

At a timing t 11 when the initialization phase ϕ 1 starts, if the clock signal CLK transitions from the L level to the H level, the transistor Tr 11 is turned off and the transistor Tr 12 is turned on, as illustrated in FIG. 6A . The transistor Tr 61 is turned on, the electric charge of the node N 2 is discharged to the ground voltage via the transistor Tr 61 and the transistor Tr 12 , and the voltage of the node N 2 decreases from the level slightly lower than the output voltage Vout. At this time, since the capacitive element C 1 maintains the stored voltage, the voltage of the node N 1 decreases from the level of the output voltage Vout. Since the transistor Tr 3 which is turned on is turned off, the voltage of the node N 3 decreases from the level slightly lower than the output voltage Vout.

At a timing t 12 illustrated in FIG. 7 , the voltage of the node N 3 decreases to the level lower than the power supply voltage Vcc, but since the transistor Tr 62 is turned on, thereafter, the voltage of the node N 3 returns to the level of the power supply voltage Vcc.

At a timing t 13 , the voltage of the node N 1 decreases to the level slightly lower than the power supply voltage Vcc. Therefore, while the transistor Tr 2 is maintained to be in the off state, the transistor Tr 1 is turned on, and thereafter, the voltage of the node N 1 returns to the level of the power supply voltage Vcc.

At a timing t 14 , the voltage of the node N 2 decreases to the ground voltage Vss and thereafter is maintained to be at the ground voltage Vss. Though not illustrated, since the clock signal CLK is at the H level, and the OR gate OR 1 outputs the H level, the transistor Tr 21 is turned off, and the transistor Tr 22 is turned on. Therefore, the node N 4 is maintained to be at the ground voltage Vss.

At a timing t 15 when the transfer phase ϕ 2 starts, if the clock signal CLK transitions from the H level to the L level, the transistor Tr 11 is turned on and the transistor Tr 12 is turned off, as illustrated in FIG. 6B . The transistor Tr 61 is turned on, the electric charge is charged at the node N 2 via the transistor Tr 11 and the transistor Tr 61 in accordance with the power supply voltage Vcc, and the voltage of the node N 2 is raised from the ground voltage Vss.

According to this, at a timing t 16 , since the capacitive element C 1 maintains the stored voltage, the voltage of the node N 1 is raised from the power supply voltage Vcc to the level higher than the output voltage Vout, but the transistor Tr 2 (which is equivalently, the diode) is turned on, a part of the electric charge starts to be transferred from one end of the capacitive element C 1 to the output node Nout side. At this time, compared with the case of FIG. 5 , the current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely generated.

For the period of the timings t 16 to t 17 , since the voltage of the node N 2 is raised, the current transferred to the output node Nout side is supplied more easily than in the case of FIG. 5 , and the capacitive load in the node N 2 becomes smaller. Consequently, the time constant becomes smaller than in the case of FIG. 5 , the capacitive element C 1 is charged at a high speed. Simultaneously, the voltage of the node N 1 is discharged from the level higher than the output voltage Vout to the level of the output voltage Vout. Together with this, the electric charge of the node N 1 stored in the capacitive element C 1 is transferred to the output node Nout side via the transistor Tr 2 . At this time, the charging speed of the node N 2 is faster than in the case of FIG. 5 , and the voltage is raised more quickly than in the case of FIG. 5 . Therefore, the boosting operation of the first step is performed.

Therefore, at the timing t 17 , the voltage of the node N 2 reaches a certain set voltage, the detected voltage of the voltage detection circuit 10 (the inverter INV 11 ) exceeds the threshold voltage, and according to this, the signal of the L level is output to the OR gate OR 1 as illustrated in FIG. 6C . Since the OR gate OR 1 outputs the L level, the transistor Tr 21 is turned on, and the transistor Tr 22 is turned off. The electric charge is charged at the node N 4 via the transistor Tr 21 in accordance with the power supply voltage Vcc, and the voltage of the node N 4 is raised from the ground voltage Vss to the power supply voltage Vcc. According to this, since the capacitive element C 2 maintains the stored voltage, the voltage of the node N 3 is raised from the power supply voltage Vcc to the level higher than the output voltage Vout. At this time, if the transistors Tr 61 and Tr 62 are turned off and the transistor Tr 3 is turned on, the electric charge of the node N 3 is transferred to the node N 2 via the transistor Tr 3 , the node N 2 is charged, and the voltage of the node N 2 is raised. According to this, since the capacitive element C 1 maintains the stored voltage, the voltage of the node N 1 is raised from the level that is about equal to the output voltage Vout.

At a timing t 18 , since the capacitive element C 1 maintains the stored voltage, if the voltage of the node N 1 is raised to the level higher than the output voltage Vout, the transistor Tr 2 (which is equivalently, the diode) is turned on, a part of the electric charge starts to be transferred from one end of the capacitive element C 1 to the output node Nout side. At this time, compared with the case of FIG. 5 , the current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely generated.

Therefore, for the period of the timings t 18 to t 19 , the electric charge transferred from the node N 2 to the output node Nout side is more easily compensated than in the case of FIG. 5 , and the capacitive load in the node N 2 becomes smaller. Consequently, the time constant becomes smaller than in the case of FIG. 5 , and the capacitive element C 1 is charged at a higher speed. Simultaneously, the voltage of the node N 1 is discharged from the level higher than the output voltage Vout to the level of the output voltage Vout. Together with this, the electric charge of the node N 1 stored in the capacitive element C 1 is transferred to the output node Nout side via the transistor Tr 2 . The electric charge of the node N 3 stored in the capacitive element C 2 is transferred to the node N 2 . At this time, the charging speed of the node N 2 is faster than that in the case of FIG. 5 , and the voltage is raised more quickly than that in the case of FIG. 5 . Accordingly, the boosting operation of the second step is performed.

At the timing t 19 , the voltage of the node N 2 reaches the level slightly lower than the output voltage Vout, and the voltage of the node N 3 reaches the level slightly lower than the output voltage Vout, and the node N 2 and the node N 3 can be almost the same voltage.

Accordingly, the boosting operation of two steps is performed by using the capacitive element C 1 of one stage and the capacitive elements C 1 and C 2 of two stages. Therefore, in the operation of FIG. 7 , the operation as the charge pump of one stage is performed for the period of the timings t 16 to t 17 , the operation as the charge pump of two stages is performed for the period of the timings t 18 to t 19 , and the current is output.

After the timing t 19 , the operation which is the same as the operation to the timings t 11 to t 19 is performed.

For example, when the load of the output voltage Vout is large and is about two times the power supply voltage Vcc (about 2.25 times in FIG. 8 ), the charge pump circuit 1 operations as illustrated in FIG. 8 .

At a timing t 21 , when the initialization phase ϕ 1 starts, if the clock signal CLK transitions from the L level to the H level, the transistor Tr 11 is turned off and the transistor Tr 12 is turned on, as illustrated in FIG. 6A . The transistor Tr 61 is turned on, the electric charge of the node N 2 is discharged to the ground voltage via the transistor Tr 61 and the transistor Tr 12 , the voltage of the node N 2 decreases from the level of about the intermediate of the output voltage Vout and the power supply voltage Vcc. At this time, since the capacitive element C 1 maintains the stored voltage, the voltage of the node N 1 decreases from the level of the output voltage Vout. Since the transistor Tr 3 which is turned on is turned off, the voltage of the node N 3 decreases from the level of about the intermediate of the output voltage Vout and the power supply voltage Vcc.

At a timing t 22 illustrated in FIG. 8 , since the voltage of the node N 3 decreases to the level lower than the power supply voltage Vcc, the transistor Tr 62 is turned on, and thereafter, the voltage of the node N 3 returns to the power supply voltage Vcc.

At the timing t 23 , the voltage of the node N 1 decreases to the level slightly lower than the power supply voltage Vcc. While the transistor Tr 2 is maintained to be in the off state, the transistor Tr 1 is turned on, and thereafter, the voltage of the node N 1 returns to the power supply voltage Vcc.

At a timing t 24 , the voltage of the node N 2 decreases to the ground voltage Vss, and thereafter, is maintained to be at the ground voltage Vss. Though not illustrated, since the clock signal CLK is at the H level and the OR gate OR 1 outputs the H level, the transistor Tr 21 is turned off, and the transistor Tr 22 is turned on. Therefore, the node N 4 is maintained to be at the ground voltage Vss.

At a timing t 25 when the transfer phase ϕ 2 starts, if the clock signal CLK transitions from the H level to the L level, the transistor Tr 11 is turned on and the transistor Tr 12 is turned off, as illustrated in FIG. 6B . The transistor Tr 61 is turned on, the electric charge is charged at the node N 2 via the transistor Tr 11 and the transistor Tr 61 in accordance with the power supply voltage Vcc, and the voltage of the node N 2 is raised from the ground voltage Vss. According to this, since the capacitive element C 1 maintains the stored voltage, the voltage of the node N 1 is raised from the power supply voltage Vcc.

At a timing t 26 , since the capacitive element C 1 maintains the stored voltage, the voltage of the node N 1 is raised to the level slightly lower than the output voltage Vout, but the transistor Tr 2 (which is equivalently, the diode) is turned off, and a part of the electric charge is less likely to be transferred from one end of the capacitive element C 1 to the output node Nout side. At this time, the current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely to be generated compared with the case of FIG. 7 .

For the period of the timings t 26 to t 27 , the capacitive load in the node N 2 is small. Consequently, the time constant becomes smaller, and charging is performed at a high speed. Simultaneously, the voltage of the node N 1 almost maintains the level slightly lower than the output voltage Vout. At this time, the charging speed of the node N 2 is the high speed, and the voltage is raised more quickly than that in the case of FIG. 7 . Therefore, the boosting operation of the first step is performed.

At a timing t 27 , the voltage of the node N 2 reaches the level of about the power supply voltage Vcc, and the detected voltage of the voltage detection circuit 10 (the inverter INV 11 ) exceeds the threshold voltage, and according to this, the signal of the L level is output to the OR gate OR 1 , as illustrated in FIG. 6C . Since the OR gate OR 1 outputs the L level, the transistor Tr 21 is turned on, and the transistor Tr 22 is turned off. The electric charge is charged at the node N 4 via the transistor Tr 21 in accordance with the power supply voltage Vcc, and the voltage of the node N 4 is raised from the ground voltage Vss to the power supply voltage Vcc. According to this, since the capacitive element C 2 maintains the stored voltage, the voltage of the node N 3 is raised from the power supply voltage Vcc to the level slightly lower than the output voltage Vout. At this time, if the transistors Tr 61 and Tr 62 are turned off, and the transistor Tr 3 is turned on, the electric charge of the node N 3 is transferred to the node N 2 via the transistor Tr 3 , the node N 2 is charged, and the voltage of the node N 2 is raised. According to this, since the capacitive element C 1 maintains the stored voltage, the voltage of the node N 1 is raised from the level slightly lower than the output voltage Vout.

At a timing t 28 , since the capacitive element C 1 maintains the stored voltage, if the voltage of the node N 1 is raised to the level higher than the output voltage Vout, the transistor Tr 2 (which is equivalently, the diode) is turned on, and a part of the electric charge starts to be transferred from one end of the capacitive element C 1 to the output node Nout side. At this time, the current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely to be generated compared with the case of FIG. 7 .

For the period of the timings t 28 to t 29 , the charging time for raising the voltage of the node N 2 is short. Consequently, the time constant becomes smaller, and charging is performed at a high speed. Simultaneously, the voltage of the node N 1 is discharged from the level higher than the output voltage Vout to the level of the output voltage Vout. Together with this, the electric charge of the node N 1 is discharged to the output node Nout side via the transistor Tr 2 . Since the discharging speed from the node N 3 is fast, discharging from the node N 3 is performed with a large time constant at a high speed. At this time, the charging speed to the node N 2 is the high speed, and the voltage is raised more quickly compared with the case of FIG. 7 . Therefore, the boosting operation of the second step is performed.

At a timing t 29 , the voltage of the node N 2 reaches the level of about the intermediate of the output voltage Vout and the power supply voltage Vcc, the voltage of the node N 3 reaches the level of about the intermediate of the output voltage Vout and the power supply voltage Vcc, and the node N 2 and the node N 3 can have almost the same voltage.

Therefore, the boosting operations of two steps using the capacitive element C 1 of one stage and the capacitive elements C 1 and C 2 of two stages are performed. In the operation of FIG. 8 , the operation as the charge pump of one stage is performed for the period of the timings t 26 to t 27 , the operation as the charge pump of two stages is performed for period of the timings t 28 to t 29 , and the current is output.

After the timing t 29 , the operation which is the same as the operation to the timings t 21 to t 29 is performed.

As described above, in the first embodiment, the capacitive element used in the charge pump circuit 1 and the number of stages of the rectifying element can be dynamically changed. For example, the charge pump circuit 1 includes the basic configuration of a charge pump of the series boost type, while the voltage detection circuit 10 is added between the capacitive elements C 1 to C 2 of the multiple stages. Since the charge pump circuit 1 can dynamically adjust the number of stages of the capacitive element and the number of steps of the boosting operations used according to the magnitude of the output voltage, an operation of an extra capacitive element can be prevented, and the generation of the excessive power consumption can be prevented. Therefore, the current efficiency of the charge pump circuit 1 can be improved.

As illustrated in FIG. 9 , a voltage detection circuit between the capacitive elements C 1 to C 3 of three stages may be added to a charge pump circuit 101 . FIG. 9 is a circuit diagram illustrating a configuration of the charge pump circuit 101 according to a first modification example of the embodiment.

The charge pump circuit 101 includes a charge and discharge circuit 103 instead of the charge and discharge circuit 3 (refer to FIG. 4 ) and further includes a voltage detection circuit 120 , a transistor Tr 4 , a capacitive element C 3 , and a charge and discharge circuit 104 .

The charge and discharge circuit 103 includes a transistor Tr 63 in addition to the OR gate OR 1 and the inverter INV 2 . The transistor Tr 63 is, for example, an NMOS transistor, having a source connected to an output node of the inverter INV 2 , a drain connected to the node N 4 , and a gate to which a predetermined signal is supplied. For example, the predetermined signal supplied to the gate of the transistor Tr 63 is a signal obtained from the clock signal CLK. More specifically, when the clock signal CLK is in a period of the L level, the predetermined signal becomes an active level (for example, a voltage of Vcc+Vth), and when the clock signal CLK is in a period of the H level, the predetermined signal becomes a non-active level (for example, a ground voltage).

The transistor Tr 63 has a function of alleviating the voltage load applied to the transistor Tr 21 and the transistor Tr 22 and improving the breakdown voltage characteristics of the circuit. The transistor Tr 63 has a function of preventing backflow of the current from the node N 4 to the inverter INV 2 .

The voltage detection circuit 120 has an input node 120 a and an output node 120 b . The input node 120 a is electrically connected to the signal line L 2 , and is connected, for example, to a node between an output node of the inverter INV 2 and the transistor Tr 63 in the signal line L 2 . Accordingly, the voltage detection circuit 120 can detect the voltage of the other end of the capacitive element C 2 via the voltage of the signal line L 2 . The output node 120 b is electrically connected to the charge and discharge circuit 104 . The voltage detection circuit 120 can supply the detection result to the charge and discharge circuit 104 .

The voltage detection circuit 120 includes an inverter INV 21 . The inverter INV 21 includes an input node INV 21 a and an output node INV 21 b . The input node INV 21 a is connected to the input node 120 a , and the output node INV 21 b is connected to the output node 120 b.

The transistor Tr 4 is disposed between the node N 4 and a node N 5 . The transistor Tr 4 is, for example, a PMOS transistor, having a source connected to the node N 5 , and a drain connected to the node N 4 .

A transistor Tr 64 functions as a transistor for initializing the node N 5 to the voltage Vcc. The transistor Tr 64 is, for example, an NMOS transistor, having a gate connected to the clock node N CLK , a source connected to a power supply voltage Vcc, and a drain connected to the node N 5 .

The capacitive element C 3 functions as the capacitive element at the third stage in the charge pump circuit 101 . The capacitive element C 3 is disposed between the node N 5 and a node N 6 . In the capacitive element C 3 , one end is electrically connected to the node N 5 , and the other end is electrically connected to the node N 6 . One end of the capacitive element C 3 can be connected to the other end of the capacitive element C 2 via the transistor Tr 4 and the node N 4 .

The charge and discharge circuit 104 includes an input node 104 a , an input node 104 b , and an output node 104 c . The input node 104 a is electrically connected to the output node 120 b of the voltage detection circuit 120 . The input node 104 b is electrically connected to the clock node N CLK . The output node 104 c is electrically connected to the node N 6 via the line L 2 . The charge and discharge circuit 104 can charge the electric charge at the other end of the capacitive element C 3 according to the detection result of the voltage detection circuit 120 .

The charge and discharge circuit 104 includes an OR gate OR 2 and an inverter INV 3 . In the OR gate OR 2 , a first input node is electrically connected to the input node 104 a , a second input node is electrically connected to the input node 104 b , and an output node is electrically connected to the inverter INV 3 . The inverter INV 3 includes an input node INV 3 a and an output node INV 3 b . The input node INV 3 a is electrically connected to the OR gate OR 2 , and the output node INV 3 b is electrically connected to a line L 3 via the output node 104 c.

The inverter INV 3 includes a transistor Tr 31 and a transistor Tr 32 . The transistor Tr 31 and the transistor Tr 32 are connected to each other via an inverter. The transistor Tr 31 is, for example, a PMOS transistor, having a source connected to the power supply voltage Vcc, a drain connected to the output node INV 3 b , and a gate connected to the input node INV 3 a . The transistor Tr 32 is, for example, an NMOS transistor, having a source connected to a ground voltage, a drain connected to the output node INV 3 b , and a gate connected to the input node INV 3 a.

In the charge pump circuit 101 illustrated in FIG. 9 , the charge pump circuit 101 charges the electric charge at the node N 2 of the other end of the capacitive element C 1 of the first stage in the transfer phase ϕ 2 of the clock cycle. At this time, the voltage detection circuit 10 detects the voltage of the node N 2 of the other end of the capacitive element C 1 of the first stage.

If the output voltage is lower than V 0 (for example, about 1.5 times the power supply voltage Vcc), since the transistor Tr 2 is easily turned on, the electric charge is easily transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side, and the current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is easily generated. Thus, it is necessary to supply the current transferred to the output node Nout side in order to raise the voltage of the other end of the capacitive element C 1 of the first stage, so that the capacitive load at the other end of the capacitive element C 1 of the first stage becomes large. Consequently, since the time constant becomes large, and the capacitive element C 1 is charged at a low speed, the voltage detection circuit 10 continuously outputs the signal of the non-active level and the capacitive element C 2 of the second stage remains deactivated. The voltage detection circuit 120 continuously outputs the signal of the non-active level, and the capacitive element C 3 at the third stage remains deactivated. The boosting operation (of one step) using the capacitive element C 1 of one stage is performed without using the capacitive element C 2 of the second stage and the capacitive element C 3 of the third stage.

If the output voltage is a value higher than V 0 and lower than V 1 (refer to FIG. 12B ), the transistor Tr 2 is less likely to be turned on, and the electric charge is less likely to be transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side. The current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely to be generated, and the capacitive load at the other end of the capacitive element C 1 of the first stage becomes smaller. Consequently, since the time constant becomes smaller and the capacitive element C 1 is charged at a high speed, the voltage detection circuit 10 outputs the signal of the active level and the capacitive element C 2 of the second stage is activated. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 101 charges the electric charge at the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, the capacitive load at the other end of the capacitive element C 2 is relatively large, and the rising speed of the voltage of the line L 2 is slow. The voltage detection circuit 120 continuously outputs the signal of the non-active level and the capacitive element C 3 of the third stage remains deactivated. The boosting operation of two steps using the capacitive elements C 1 and C 2 of two stages is performed without using the capacitive element C 3 of the third stage.

If the output voltage is a value higher than V 1 , the transistor Tr 2 is much less likely to be turned on, the electric charge is less likely to be transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side. The current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely to be generated, and the capacitive load at the other end of the capacitive element C 1 of the first stage becomes smaller. Consequently, since the time constant becomes smaller, and charging is performed at the high speed, the voltage detection circuit 10 outputs the signal of the active level and the capacitive element C 2 of the second stage is activated. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 101 charges the electric charge at the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on, so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, the capacitive load at the other end of the capacitive element C 2 is relatively small, and the rising speed of the voltage of the line L 2 is fast. The voltage detection circuit 120 outputs the signal of the active level, and the capacitive element C 3 of the third stage is activated. Therefore, the boosting operation of three steps is performed by using the capacitive elements C 1 to C 3 of three stages.

In this manner, also in the configuration in which the voltage detection circuits 10 and 120 are added between the capacitive elements C 1 to C 3 of three stages, the number of stages of the capacitive element and the number of steps of the boosting operation used according to the magnitude of the output voltage can be dynamically adjusted. As a result, the operation of an extra capacitive element can be prevented, and the generation of excessive power consumption can be prevented. Therefore, the current efficiency of the charge pump circuit 101 can be improved.

Otherwise, as illustrated in FIG. 10 , a charge pump circuit 201 may be configured to add a voltage detection circuit between the capacitive elements C 1 to C 4 of four stages. FIG. 10 is a circuit diagram illustrating a configuration of the charge pump circuit 201 according to a second modification example of the embodiment.

The charge pump circuit 201 includes a charge and discharge circuit 204 instead of the charge and discharge circuit 104 (refer to FIG. 9 ), and further includes a voltage detection circuit 230 , a transistor Tr 5 , a capacitive element C 4 , and a charge and discharge circuit 205 .

The charge and discharge circuit 204 includes a transistor Tr 66 in addition to the OR gate OR 2 and the inverter INV 3 . A transistor Tr 65 is, for example, an NMOS transistor, having a source connected to an output node of the inverter INV 3 , a drain connected to the node N 6 , and a gate to which a predetermined signal is supplied. For example, the predetermined signal supplied to the gate of the transistor 65 is a signal obtained from the clock signal CLK. More specifically, when the clock signal CLK is in a period of the L level, the predetermined signal becomes an active level (for example, a voltage of Vcc+Vth), and when the clock signal CLK is in a period of the H level, the predetermined signal becomes a non-active level (for example, a ground voltage).

The transistor Tr 65 has a function of alleviating the voltage load applied to the transistor Tr 31 and the transistor Tr 32 and improving the breakdown voltage characteristics of the circuit. The transistor Tr 65 has a function of preventing backflow of the current from the node N 6 to the inverter INV 3 .

The voltage detection circuit 230 includes an input node 230 a and an output node 230 b . The input node 230 a is electrically connected to the signal line L 3 , and is connected, for example, to a node between the output node of the inverter INV 3 and the transistor Tr 66 in the signal line L 3 . The voltage detection circuit 230 can detect the voltage of the other end of the capacitive element C 3 via the voltage of the signal line L 3 . The output node 230 b is electrically connected to the charge and discharge circuit 205 . The voltage detection circuit 230 can supply the detection result to the charge and discharge circuit 205 .

The voltage detection circuit 230 is configured, for example, as an inverter INV 31 . The inverter INV 31 includes an input node INV 31 a and an output node INV 31 b . The input node INV 31 a is connected to the input node 230 a , and the output node INV 31 b is connected to the output node 230 b.

The transistor Tr 5 is disposed between the node N 6 and a node N 7 . The transistor Tr 5 is, for example, a PMOS transistor, having a source connected to the node N 7 , and a drain connected to the node N 6 .

The transistor Tr 66 functions as a transistor for initializing the node N 7 to the voltage Vcc. The transistor Tr 66 is, for example, an NMOS transistor, having a gate connected to the clock node N CLK , a source connected to the power supply voltage Vcc, and a drain connected to the node N 7 .

The capacitive element C 4 functions as the capacitive element of the fourth stage in the charge pump circuit 201 . The capacitive element C 4 is disposed between the node N 7 and a node N 8 . In the capacitive element C 4 , one end is electrically connected to the node N 7 , and the other end is electrically connected to the node N 8 . One end of the capacitive element C 4 can be connected to the other end of the capacitive element C 3 via the transistor Tr 5 and the node N 8 .

The charge and discharge circuit 205 includes an input node 205 a , an input node 205 b , and an output node 205 c . The input node 205 a is electrically connected to the output node 230 b of the voltage detection circuit 230 . The input node 205 b is electrically connected to the clock node N CLK . The output node 205 c is electrically connected to the node N 8 via a line L 4 . The charge and discharge circuit 205 can charge the electric charge at the other end of the capacitive element C 4 according to the detection result of the voltage detection circuit 230 .

The charge and discharge circuit 205 includes an OR gate OR 3 and the inverter INV 4 . In the OR gate OR 3 , a first input node is electrically connected to the input node 205 a , a second input node is electrically connected to the input node 205 b , and an output node is electrically connected to the inverter INV 4 . The inverter INV 4 includes an input node INV 4 a and an output node INV 4 b . The input node INV 4 a is electrically connected to the OR gate OR 3 , and the output node INV 4 b is electrically connected to the line L 4 via the output node 205 c.

The inverter INV 4 includes a transistor Tr 41 and a transistor Tr 42 . The transistor Tr 41 and the transistor Tr 42 are connected to each other via an inverter. The transistor Tr 41 is, for example, a PMOS transistor, having a source connected to the power supply voltage Vcc, a drain connected to the output node INV 4 b , and a gate connected to the input node INV 4 a . The transistor Tr 42 is, for example, an NMOS transistor, having a source connected to a ground voltage, a drain connected to the output node INV 4 b , and a gate connected to the input node INV 4 a.

In the charge pump circuit 201 illustrated in FIG. 10 , the charge pump circuit 201 charges the electric charge at the node N 2 of the other end of the capacitive element C 1 of the first stage in the transfer phase ϕ 2 of the clock cycle. At this time, the voltage detection circuit 10 detects the voltage of the node N 2 of the other end of the capacitive element C 1 of the first stage.

If the output voltage is lower than V 0 , the transistor Tr 2 is easily turned on, the electric charge is easily transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side, and thus the current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is easily generated. The capacitive load at the other end of the capacitive element C 1 of the first stage becomes large. Consequently, since the time constant becomes large, and the capacitive element C 1 is charged at a low speed, the voltage detection circuit 10 continuously outputs the signal of the non-active level, and the capacitive element C 2 of the second stage remains deactivated. The voltage detection circuit 120 continuously outputs the signal of the non-active level, and the capacitive element C 3 of the third stage remains deactivated. The voltage detection circuit 230 continuously outputs the signal of the non-active level, and the capacitive element C 4 of the fourth stage remains deactivated. The boosting operation (of one step) using the capacitive element C 1 of one stage is performed without using the capacitive element C 2 of the second stage, the capacitive element C 3 of the third stage, and the capacitive element C 4 of the fourth stage.

If the output voltage becomes a value higher than V 0 and lower than V 1 (refer to FIG. 12C ), the transistor Tr 2 is less likely to be turned on, and the electric charge is less likely to be transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side. The capacitive load at the other end of the capacitive element C 1 of the first stage becomes smaller. Consequently, since the time constant becomes smaller, and the capacitive element C 1 is charged at a high speed, the voltage detection circuit 10 outputs the signal of the active level, and activates the capacitive element C 2 of the second stage. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 201 charges the electric charge at the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on, so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, capacitive load is comparatively large at the other end of the capacitive element C 2 , and the rising speed of voltage of the line L 2 is slow. The voltage detection circuit 120 continuously outputs the signal of the non-active level, and the capacitive element C 3 of the third stage remains deactivated. The voltage detection circuit 230 continuously outputs the signal of the non-active level, and the capacitive element C 4 of the fourth stage remains deactivated. The boosting operation of two steps using the capacitive elements C 1 and C 2 of two stages is performed without using the capacitive element C 3 of the third stage and the capacitive element C 4 of the fourth stage.

If the output voltage is a value higher than V 1 and lower than V 2 (refer to FIG. 12C ), the transistor Tr 2 is much less likely to be turned on, and the electric charge is less likely to be transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side. The capacitive load at the other end of the capacitive element C 1 of the first stage becomes smaller. Consequently, since the time constant becomes smaller, and the capacitive element C 1 is charged at a high speed, the voltage detection circuit 10 outputs the signal of the active level and activates the capacitive element C 2 of the second stage. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 201 charges the electric charge at the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on, so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, capacitive load at the other end of the capacitive element C 2 is relatively small, and the rising speed of the voltage of the line L 2 is fast. The voltage detection circuit 120 outputs the signal of the active level, and the capacitive element C 3 of the third stage is activated. If the capacitive element C 3 of the third stage is activated, the charge pump circuit 201 charges the electric charge at the node N 6 of the other end of the capacitive element C 3 of the third stage, and thereafter, the transistor Tr 4 is turned on, so that the electric charge accumulated in the capacitive element C 3 of the third stage is transferred to the other end of the capacitive element C 2 of the second stage. At this time, the capacitive load at the other end of the capacitive element C 3 is comparatively large, and the rising speed of the voltage of the line L 3 is slow. The voltage detection circuit 230 continuously outputs the signal of the non-active level, and the capacitive element C 4 of the fourth stage remains deactivated. Therefore, the boosting operation of three steps using the capacitive elements C 1 to C 3 of three stages is performed without using the capacitive element C 4 of the fourth stage.

If the output voltage is a value higher than V 2 , the transistor Tr 2 is much less likely to be turned on, and the electric charge is less likely to be transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side. The charging time for raising voltage of the other end of the capacitive element C 1 of the first stage becomes shorter. Consequently, since the time constant becomes smaller, and charging is performed at a high speed, the voltage detection circuit 10 outputs the signal of the active level, and the capacitive element C 2 of the second stage is activated. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 201 charges the electric charge at the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on, so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, the capacitive load at the other end of the capacitive element C 2 is relatively small, and the rising speed of the voltage of the line L 2 is fast. The voltage detection circuit 120 outputs the signal of the active level, and the capacitive element C 3 of the third stage is activated. If the capacitive element C 3 of the third stage is activated, the charge pump circuit 201 charges the electric charge at the node N 6 of the other end of the capacitive element C 3 of the third stage, and thereafter, the transistor Tr 4 is turned on, so that the electric charge accumulated in the capacitive element C 3 of the third stage is transferred to the other end of the capacitive element C 2 of the second stage. At this time, the capacitive load at the other end of the capacitive element C 3 is relatively small, and the rising speed of the voltage of the line L 3 is fast. Therefore, the voltage detection circuit 230 outputs the signal of active level, and the capacitive element C 4 of the fourth stage is activated. If the capacitive element C 4 of the fourth stage is activated, the charge pump circuit 201 charges the electric charge at the node N 8 of the other end of the capacitive element C 4 of the fourth stage, and thereafter, the transistor Tr 5 is turned on so that the electric charge accumulated in the capacitive element C 4 of the fourth stage is transferred to the other end of the capacitive element C 3 of the third stage. Therefore, the boosting operation of four steps using the capacitive elements C 1 to C 4 of four stages is performed.

As described above, also in the configuration in which the voltage detection circuits 10 , 120 , and 230 are added between the capacitive elements C 1 to C 4 of four stages, the number of stages of the capacitive element and the number of steps of the boosting operation used according to the magnitude of the output voltage can be dynamically adjusted. As a result, the operation of an extra capacitive element can be prevented, and the generation of excessive power consumption can be prevented. Therefore, the current efficiency of the charge pump circuit 201 can be improved.

Otherwise, as illustrated in FIG. 11 , a voltage detection circuit between the capacitive elements C 1 to C 5 of five stages may be added to a charge pump circuit 301 . FIG. 11 is a circuit diagram illustrating a configuration of the charge pump circuit 301 according to a third modification example of the embodiment.

The charge pump circuit 301 includes a charge and discharge circuit 305 instead of the charge and discharge circuit 205 (refer to FIG. 10 ), and further includes a voltage detection circuit 340 , a transistor Tr 6 , a capacitive element C 5 , and a charge and discharge circuit 306 .

The charge and discharge circuit 305 includes the transistor Tr 66 in addition to the OR gate OR 3 and the inverter INV 4 . A transistor Tr 67 is, for example, an NMOS transistor, having a source connected to an output node of the inverter INV 4 , a drain connected to the node N 8 , and a gate to which a predetermined signal is supplied. For example, the predetermined signal supplied to the gate of the transistor Tr. 67 is a signal obtained from the clock signal CLK. More specifically, when the clock signal CLK is in a period of the L level, the predetermined signal becomes an active level (for example, a voltage of Vcc+Vth), and when the clock signal CLK is in a period of the H level, the predetermined signal becomes a non-active level (for example, a ground voltage).

The transistor Tr 67 has a function of alleviating the voltage load applied to the transistor Tr 41 and the transistor Tr 42 and improving breakdown voltage characteristics of the circuit. The transistor Tr 67 has a function of preventing backflow of the current from the node N 8 to the inverter INV 4 .

The voltage detection circuit 340 has an input node 340 a and an output node 340 b . The input node 340 a is electrically connected to the signal line L 4 , and is connected, for example, to a node between the output node of the inverter INV 4 and the transistor Tr 67 in the signal line L 4 . The voltage detection circuit 340 can detect the voltage of the other end of the capacitive element C 4 via the voltage of the signal line L 4 . The output node 340 b is electrically connected to the charge and discharge circuit 306 . Therefore, the voltage detection circuit 340 can supply the detection result to the charge and discharge circuit 306 .

The voltage detection circuit 340 is configured, for example, as the inverter INV 41 . The inverter INV 41 includes an input node INV 41 a and an output node INV 41 b . The input node INV 41 a is connected to the input node 340 a , and the output node INV 41 b is connected to the output node 340 b.

The transistor Tr 6 is disposed between the node N 8 and a node N 9 . The transistor Tr 6 is, for example, a PMOS transistor, having a source connected to the node N 9 , and a drain connected to the node N 8 .

The capacitive element C 5 functions as a capacitive element of the fifth stage in the charge pump circuit 301 . The capacitive element C 5 is disposed between the node N 9 and a node N 10 . In the capacitive element C 5 , one end is electrically connected to the node N 9 , and the other end is electrically connected to the node N 10 . One end of the capacitive element C 5 can be connected to the other end of the capacitive element C 4 via the transistor Tr 6 and the node N 10 .

The charge and discharge circuit 306 includes an input node 306 a , an input node 306 b , and an output node 306 c . The input node 306 a is electrically connected to the output node 340 b of the voltage detection circuit 340 . The input node 306 b is electrically connected to the clock node N CLK . The output node 306 c is electrically connected to the node N 10 via a line L 5 . The charge and discharge circuit 306 can charge the electric charge at the other end of the capacitive element C 5 according to the detection result of the voltage detection circuit 340 .

The charge and discharge circuit 306 includes an OR gate OR 4 and an inverter INV 5 . In the OR gate OR 4 , the first input node is electrically connected to the input node 306 a , the second input node is electrically connected to the input node 306 b , and the output node is electrically connected to the inverter INV 5 . The inverter INV 5 includes an input node INV 5 a and an output node INV 5 b . The input node INV 5 a is electrically connected to the OR gate OR 4 , and the output node INV 5 b is electrically connected to the line L 5 via the output node 306 c.

The inverter INV 5 includes a transistor Tr 51 and a transistor Tr 52 . The transistor Tr 51 and the transistor Tr 52 are connected to each other via an inverter. The transistor Tr 51 is, for example, a PMOS transistor, having a source connected to the power supply voltage Vcc, a drain connected to the output node INV 5 b , and a gate connected to the input node INV 5 a . The transistor Tr 52 is, for example, an NMOS transistor, having a source connected to a ground voltage, a drain connected to the output node INV 5 b , and a gate connected to the input node INV 5 a.

In the charge pump circuit 301 illustrated in FIG. 11 , the charge pump circuit 301 charges the electric charge at the node N 2 of the other end of the capacitive element C 1 of the first stage in the transfer phase ϕ 2 of the clock cycle. At this time, the voltage detection circuit 10 detects the voltage of the node N 2 of the other end of the capacitive element C 1 of the first stage.

If the output voltage is lower than V 0 , since the transistor Tr 2 is easily turned on, and the electric charge is easily transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side, the current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is easily generated. The capacitive load in the capacitive element C 1 of the first stage becomes large. Consequently, since the time constant becomes large, and the capacitive element C 1 is charged at a low speed, the voltage detection circuit 10 continuously outputs the signal of the non-active level, and the capacitive element C 2 of the second stage remains deactivated. The voltage detection circuit 120 continuously outputs the signal of the non-active level, and the capacitive element C 3 of the third stage remains deactivated. The voltage detection circuit 230 continuously outputs the signal of the non-active level, and the capacitive element C 4 of the fourth stage remains deactivated. The voltage detection circuit 340 continuously outputs the signal of the non-active level, and the capacitive element C 5 of the fifth stage remains deactivated. Therefore, the boosting operation (of one step) using the capacitive element C 1 of one stage is performed without using the capacitive element C 2 of the second stage, the capacitive element C 3 of the third stage, the capacitive element C 4 of the fourth stage, and the capacitive element C 5 of the fifth stage.

If the output voltage is a value higher than V 0 and lower than V 1 (refer to FIG. 12D ), the transistor Tr 2 is less likely to be turned on, and the electric charge is less likely to be transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side. The current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely to be generated, and the capacitive load in the capacitive element C 1 of the first stage becomes smaller. Consequently, since the time constant becomes smaller, and the capacitive element C 1 is charged at a high speed, the voltage detection circuit 10 outputs the signal of the active level, and the capacitive element C 2 of the second stage is activated. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 301 charges the electric charge at the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on, so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, the capacitive load at the other end of the capacitive element C 2 is comparatively large, and the rising speed of the voltage of the line L 2 is slow. The voltage detection circuit 120 continuously outputs the signal of the non-active level, and the capacitive element C 3 of the third stage remains deactivated. The voltage detection circuit 230 continuously outputs the signal of the non-active level, and the capacitive element C 4 of the fourth stage remains deactivated. The voltage detection circuit 340 continuously outputs the signal of the non-active level, and the capacitive element C 5 of the fifth stage remains deactivated. Therefore, the boosting operation of two steps using the capacitive elements C 1 and C 2 of two stages is performed without using the capacitive element C 3 of the third stage, the capacitive element C 4 of the fourth stage, and the capacitive element C 5 of the fifth stage.

If the output voltage is a value higher than V 1 and lower than V 2 (refer to FIG. 12D ), the transistor Tr 2 is much less likely to be turned on, and the electric charge is less likely to be transferred from one end of the capacitive element C 1 of the first stage to the output node Nout side. The current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely to be generated, and capacitive load in the capacitive element C 1 of the first stage becomes smaller. Consequently, since the time constant becomes smaller, and the capacitive element C 1 is charged at a high speed, the voltage detection circuit 10 outputs the signal of the active level, and the capacitive element C 2 of the second stage is activated. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 301 charges the electric charge to the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on, so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, the capacitive load at the other end of the capacitive element C 2 is relatively small, and the rising speed of the voltage of the line L 2 is fast. The voltage detection circuit 120 outputs the signal of the active level, and the capacitive element C 3 of the third stage is activated. If the capacitive element C 3 of the third stage is activated, the charge pump circuit 301 charges the electric charge at the node N 6 of the other end of the capacitive element C 3 of the third stage, and thereafter, the transistor Tr 4 is turned on, so that the electric charge accumulated in the capacitive element C 3 of the third stage is transferred to the other end of the capacitive element C 2 of the second stage. At this time, the capacitive load at the other end of the capacitive element C 3 is comparatively large, and the rising speed of the voltage of the line L 3 is slow. Therefore, the voltage detection circuit 230 continuously outputs the signal of the non-active level, and the capacitive element C 4 of the fourth stage remains deactivated. The voltage detection circuit 340 continuously outputs the signal of the non-active level, and the capacitive element C 5 of the fifth stage remains deactivated. Therefore, the boosting operation of three steps using the capacitive elements C 1 to C 3 of three stages is performed without using the capacitive element C 4 of the fourth stage and the capacitive element C 5 of the fifth stage.

If the output voltage is a value higher than V 2 and lower than V 3 (refer to FIG. 12D ), the transistor Tr 2 is much less likely to be turned on, and thus the electric charge from one end of the capacitive element C 1 of the first stage is less likely to be transferred to the output node Nout side. The current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely to be generated, and the capacitive load in the capacitive element C 1 of the first stage becomes smaller. Consequently, since the time constant becomes smaller, and the capacitive element C 1 is charged at a high speed, the voltage detection circuit 10 outputs the signal of the active level, and the capacitive element C 2 of the second stage is activated. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 301 charges the electric charge to the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on, so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, the capacitive load at the other end of the capacitive element C 2 is relatively small, and the rising speed of the voltage of the line L 2 is fast. The voltage detection circuit 120 outputs the signal of the active level, and the capacitive element C 3 of the third stage is activated. If the capacitive element C 3 of the third stage is activated, the charge pump circuit 301 charges the electric charge at the node N 6 of the other end of the capacitive element C 3 of the third stage, and thereafter, the transistor Tr 4 is turned on, the electric charge accumulated in the capacitive element C 3 of the third stage is transferred to the other end of the capacitive element C 2 of the second stage. At this time, the capacitive load at the other end of the capacitive element C 3 is relatively small, and the rising speed of the voltage of the line L 3 is fast. The voltage detection circuit 230 outputs the signal of the active level, and the capacitive element C 4 of the fourth stage is activated. If the capacitive element C 4 of the fourth stage is activated, the charge pump circuit 301 charges the electric charge at the node N 8 of the other end of the capacitive element C 4 of the fourth stage, and thereafter, the transistor Tr 5 is turned on, so that the electric charge accumulated in the capacitive element C 4 of the fourth stage is transferred to the other end of the capacitive element C 3 of the third stage. The voltage detection circuit 340 continuously outputs the signal of the non-active level, the capacitive element C 5 of the fifth stage remains deactivated. Therefore, the boosting operation of four steps using the capacitive elements C 1 to C 4 of four stages is performed without using the capacitive element C 5 of the fifth stage.

If the output voltage is a value higher than V 3 , the transistor Tr 2 is much less likely to be turned on, and the electric charge from one end of the capacitive element C 1 of the first stage is less likely to be transferred to the output node Nout side. The current path from the power supply voltage Vcc to the output node Nout via the line L 1 , the capacitive element C 1 , and the transistor Tr 2 , is less likely to be generated, and the capacitive load in the capacitive element C 1 of the first stage becomes smaller. Consequently, since the time constant becomes smaller, and the capacitive element C 1 is charged at a high speed, the voltage detection circuit 10 outputs the signal of the active level, and the capacitive element C 2 of the second stage is activated. If the capacitive element C 2 of the second stage is activated, the charge pump circuit 301 charges the electric charge to the node N 4 of the other end of the capacitive element C 2 of the second stage, and thereafter, the transistor Tr 3 is turned on, so that the electric charge accumulated in the capacitive element C 2 of the second stage is transferred to the other end of the capacitive element C 1 of the first stage. At this time, the capacitive load at the other end of the capacitive element C 2 is relatively small, and the rising speed of the voltage of the line L 2 is fast. Therefore, the voltage detection circuit 120 outputs the signal of the active level, the capacitive element C 3 of the third stage is activated. If the capacitive element C 3 of the third stage is activated, the charge pump circuit 301 charges the electric charge at the node N 6 of the other end of the capacitive element C 3 of the third stage, and thereafter, the transistor Tr 4 is turned on, so that the electric charge accumulated in the capacitive element C 3 of the third stage is transferred to the other end of the capacitive element C 2 of the second stage. At this time, capacitive load at the other end of the capacitive element C 3 is relatively small, and the rising speed of the voltage of the line L 3 is fast. The voltage detection circuit 230 outputs the signal of the active level, and the capacitive element C 4 of the fourth stage is activated. If the capacitive element C 4 of the fourth stage is activated, the charge pump circuit 301 charges the electric charge at the node N 8 of the other end of the capacitive element C 4 of the fourth stage, and thereafter, the transistor Tr 5 is turned on, the electric charge accumulated in the capacitive element C 4 of the fourth stage is transferred to the other end of the capacitive element C 3 of the third stage. At this time, the capacitive load at the other end of the capacitive element C 4 is relatively small, and the rising speed of the voltage of the line L 4 is fast. The voltage detection circuit 340 outputs the signal of the active level, and the capacitive element C 5 of the fifth stage is activated. If the capacitive element C 5 of the fifth stage is activated, the charge pump circuit 301 charges the electric charge at the node N 10 of the other end of the capacitive element C 5 of the fifth stage, and thereafter, the transistor Tr 6 is turned on, so that the electric charge accumulated in the capacitive element C 5 of the fifth stage is transferred to the other end of the capacitive element C 4 of the fourth stage. Therefore, the boosting operation of five steps using the capacitive elements C 1 to C 5 of five stages is performed.

As described above, also in the configuration in which the voltage detection circuits 10 , 120 , 230 , and 340 are added between the capacitive elements C 1 to C 5 of five stages, the number of stages of the capacitive element and the number of steps of the boosting operation used according to the magnitude of the output voltage can be dynamically adjusted. As a result, the operation of an extra capacitive element can be prevented, and the generation of excessive power consumption can be prevented. Therefore, the current efficiency of the charge pump circuit 301 can be improved.

Subsequently, a relationship between the number of stages of the capacitive element and the pump characteristics in the charge pump circuit is described with reference to FIGS. 12A to 12D . FIGS. 12A to 12D are diagrams illustrating characteristics of the charge pump circuit according to the embodiment and the first to third modification examples thereof.

If the number of stages of the capacitive element in the charge pump circuit is M, effective current efficiency I eff of the charge pump circuit is expressed by Expression 1.

I eff ∝1/( M+ 1)  Expression 1

A maximum voltage that can be generated by the charge pump circuit is set as V max and is expressed by Expression 2.

V max =( M+ 1)×Vcc  Expression 2

As expressed by Expressions 1 and 2, if the number of stages M of the capacitive element is increased, the effective current efficiency I eff decreases, but the maximum voltage V max can be raised.

For example, in the case of M=2 (that is, in a case of the configuration of FIG. 4 ), as illustrated in FIG. 12A , there is tendency in that as the output voltage is raised, the current efficiency decreases, and there is tendency in that the current efficiency rapidly decreases near the maximum voltage of 2 Vcc.

In the case of M=3 (that is, in a case of the configuration of FIG. 9 ), as illustrated in FIG. 12B , there is tendency in that the output voltage is raised, and the current efficiency decreases. However, if the output voltage exceeds V 1 , the boosting operation of two stages illustrated by the dotted line is dynamically substituted with the boosting operation of three stages illustrated by the alternate long and short dash line. The decrease of the current efficiency is prevented, and the higher maximum voltage of 3 Vcc can be generated. V 1 is a value between Vcc and 2 Vcc.

In the case of M=4 (that is, in a case of the configuration of FIG. 10 ), as illustrated in FIG. 12C , there is tendency in that the output voltage is raised, and the current efficiency is decreased. However, if the output voltage exceeds V 1 , the boosting operation of two stages illustrated by the dotted line is dynamically substituted with the boosting operation of three stages illustrated by the alternate long and short dash line. If the output voltage exceeds V 2 , the boosting operation of three stages illustrated by the alternate long and short dash line is dynamically substituted with the boosting operation of four stages illustrated by the alternate long and two short dashes line. Therefore, the decrease of the current efficiency is prevented in a stepwise manner, and the higher maximum voltage of 4 Vcc can be generated. V 2 is a value between 2 Vcc and 3 Vcc.

In the case of M=5 (that is, in a case of the configuration of FIG. 11 ), as illustrated in FIG. 12D , there is tendency in that the output voltage is raised, and the current efficiency decreases. However, if the output voltage exceeds V 1 , the boosting operation of two stages illustrated by the dotted line is dynamically substituted with the boosting operation of three stages illustrated by the alternate long and short dash line. If the output voltage exceeds V 2 , the boosting operation of three stages illustrated by the alternate long and short dash line is dynamically substituted with the boosting operation of four stages illustrated by the alternate long and two short dashes line. If the output voltage exceeds V 3 , the boosting operation of four stages illustrated by the alternate long and two short dashes line is dynamically substituted with the boosting operation of five stages illustrated by the dotted line. Therefore, the decrease of the current efficiency is prevented in a stepwise manner, and the higher maximum voltage of 5 Vcc can be generated. V 3 is a value between 3 Vcc and 4 Vcc.

As illustrated in FIG. 13 , a charge pump circuit 401 may be configured as a threshold cancel type. FIG. 13 is a circuit diagram illustrating a configuration of the charge pump circuit 401 according to a fourth modification example of the embodiment.

The charge pump circuit 401 includes a main charge pump circuit 1 a and a sub-charge pump circuit 1 i . The main charge pump circuit 1 a can be obtained by substituting the diode-connected transistors Tr 1 and Tr 2 in the charge pump circuit 1 illustrated in FIG. 4 with transistors Tr 1 a and Tr 2 a that are not diode-connected. The sub-charge pump circuit 1 i can be obtained by omitting the transistor Tr 2 in the charge pump circuit 1 illustrated in FIG. 4 . The voltage detection circuit 10 is used in common in the main charge pump circuit 1 a and the sub-charge pump circuit 1 i . Alternatively, the voltage detection circuits 10 may be separately provided.

In the transistor Tr 1 a , a gate is not connected to a drain, and an active level (for example, Vcc+Vth) is supplied to a gate. In the transistor Tr 1 , a gate is not connected to the drain, and the node N 1 of the sub-charge pump circuit 1 i is connected to the gate. That is, the node N 1 connected to the drain of the transistor Tr 2 and N 1 connected to the gate in the charge pump circuit 1 illustrated in FIG. 4 are electrically separated in the transistor Tr 2 a . Accordingly, even if the electric charge is transferred from the node N 1 to the output node Nout via the drain and the source of the transistor Tr 2 a , the electric charge is stored in the gate of the transistor Tr 2 a , and thus the voltage between the gate and the source of the transistor Tr 2 a can be secured, so that the operation of the transistor Tr 2 a can be stabilized.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosure. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure. In the above embodiments, the semiconductor storage device including a memory cell array is exemplified and described, but the present disclosure can be appropriately applied to a semiconductor device including a charge pump. For example, the above embodiments may be applied to a discrete (single-function) semiconductor device that professionally provides a function as a charge pump. The electronic circuit according to the above embodiments may not be mounted on the semiconductor substrate and may be mounted on an electronic device.