Clock distribution circuit and semiconductor device including the clock distribution circuit

The present application is a continuation-in-part application of U.S. patent application Ser. No. 16/104,776, filed on Aug. 17, 2018, and claims priority under 35 U.S.C. § 119(a) to Korean application number 10-2018-0016550, filed on Feb. 9, 2018, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.

1. Technical Field

Various embodiments generally relate to a semiconductor device, and more particularly, to a clock distribution circuit and a semiconductor device including the clock distribution circuit.

2. Related Art

A semiconductor device includes a clock distribution circuit for distributing an external clock signal to various internal circuits, the external clock signal including a clock signal provided from a host.

The clock distribution circuit includes logic circuits for receiving the external clock signal and processing or retransmitting the received clock signal such that the clock signal can be used in the internal circuits, and the logic circuits may be operated according to a bias voltage.

Therefore, in order to raise the operation efficiency and performance of the semiconductor device, the level of the bias voltage provided to the logic circuits needs to be efficiently controlled.

In an embodiment, a clock distribution circuit may be provided. The clock distribution circuit may include a data clock generation circuit configured to be input a power source voltage and configured to generate an internal clock signal according to an external clock signal; and a global distribution circuit includes a first circuit and a second circuit coupled to a global line, configured to be input a power source voltage and configured to receive the internal clock signal through the first circuit and distribute the internal clock signal to an exterior of the clock distribution circuit through the second circuit, wherein a first bias voltage provided to the first circuit and a second bias voltage provided to the second circuit are controlled independently of each other.

In an embodiment, a semiconductor device may be provided. The semiconductor device may include a clock distribution circuit including first and second circuits, configured to be input a power source voltage and configured to distribute an internal clock signal to global lines, the internal clock signal being generated based on an external clock signal; a plurality of DQ arrays; and a plurality of local networks configured to be input the power source voltage and configured to distribute the internal clock signal transmitted through the global lines to the plurality of DQ arrays, wherein a second bias voltage is provided to the second circuit directly coupled to the global lines, and a first bias voltage is provided to the first circuit coupled to the second circuit, and wherein the first and second bias voltages are controlled independently of each other

FIG. 1 illustrates the configuration of a data processing system in accordance with an embodiment.

FIG. 2 illustrates the configuration of a semiconductor device including a clock distribution circuit in accordance with an embodiment.

FIG. 3 illustrates the configuration of a local network of FIG. 2 .

FIG. 4 illustrates the configuration of a repeater of FIG. 3 .

FIG. 5 illustrates the configuration of a converter of FIG. 3 .

FIG. 6 illustrates the configuration of a clock distributor of FIG. 3 .

FIG. 7 illustrates the configuration of a data clock generation circuit of FIG. 2 .

FIG. 8 illustrates the configuration of a global distribution circuit of FIG. 2 .

FIG. 9 illustrates the configuration of a bias distribution circuit of FIG. 2 .

FIG. 10 illustrates the configuration of a first digital-analog converter of FIG. 9 .

Hereinafter, a clock distribution circuit and a semiconductor device including the clock distribution circuit according to the present disclosure will be described below with reference to the accompanying drawings through examples of embodiments.

Various embodiments may be directed to a clock distribution circuit capable of efficiently controlling a bias voltage and a semiconductor device including the same.

FIG. 1 illustrates the configuration of a data processing system in accordance with an embodiment.

Referring to FIG. 1 , the data processing system 10 in accordance with an embodiment may include a host 11 and a semiconductor device 100 .

The host 11 may provide clock signals HCK and WCK/WCKB and a command and address signal CA to the semiconductor device 100 , and perform data communication with the semiconductor device 100 .

Hereafter, the clock signals HCK and WCK/WCKB will be referred to as external clock signals based on the semiconductor device 100 .

The host 11 may include a memory controller such as a central processing unit (CPU) or graphic processing unit (GPU), for example.

The first external clock signal HCK, which is a clock signal related to the command and address signal CA, may be used as a reference signal when the semiconductor device 100 receives the command and address signal CA.

The second external clock signal WCK/WCKB is a clock signal related to data DATA. In an embodiment, a differential clock signal may be used, but a single phase clock signal can be used. The second external clock signal WCK/WCKB may be used as a reference signal when the semiconductor device 100 receives the data DATA.

The second external clock signal WCK/WCKB may have a higher frequency than the first external clock signal HCK.

The second external clock signal WCK/WCKB may have a frequency of 8 GHz, for example, but the first external clock signal HCK may have a lower frequency than the second external clock signal WCK/WCKB, for example, a frequency of 1 GHz.

The semiconductor device 100 may include a memory apparatus such as a graphic memory, for example.

Logic circuits may be divided into current mode logic (CML) circuits and complementary metal-oxide semiconductor (CMOS) circuits, depending on their signal processing methods.

The regions of the semiconductor device 100 may be divided into a first region in which the CML circuits are arranged and a second region in which the CMOS circuits are arranged.

For convenience of description, the regions of the semiconductor device 100 may be divided into a center region and local regions. The center region may correspond to the first region, and the local regions may correspond to the second region.

The circuits of the center region may be maintained in an active state regardless of a read/write operation of the semiconductor device.

However, a part of CML-level clock signals may be partially deactivated according to a power down mode or a command such as a refresh command.

The circuits of the local region may be enabled or disabled to according to a read/write operation of the semiconductor device.

Each of the CML circuits of the center region transfers a signal inputted thereto to another CML circuit closer to the CML circuit than the local regions, but each of the CMOS circuits of the local regions needs to receive a signal processed at the CML level in the center region through a global line having larger loading than an internal signal line of the center region, and convert the received signal into the CMOS level.

Therefore, when the bias voltages of circuits which transfer signals to the circuits of the local regions through the global line, among the circuits of the center region, are controlled to the same level as the other circuits of the center region, the clock signaling characteristic of the semiconductor device may be degraded.

Furthermore, when the bias voltages of circuits which transfer signals to other circuits of the center region, among the circuits of the center region, are set to the same level as the bias voltages of circuits which directly transfer signals to the circuits of the local region, power efficiency may be reduced by unnecessary power consumption.

The clock distribution circuit of the semiconductor device in accordance with an embodiment may be configured to independently control the bias voltages of a part of the circuits, for example, the circuits which transfer signals to the local regions through the global line, among the circuits of the center region, and the bias voltages of the other circuits.

FIG. 2 illustrates the configuration of a semiconductor device including a clock distribution circuit in accordance with an embodiment.

Referring to FIG. 2 , the semiconductor device 100 in accordance with an embodiment may include a plurality of DQ arrays 201 , 301 , 401 and 501 , a plurality of local networks 202 , 302 , 402 and 502 , a plurality of data clock generation circuits 601 and 701 , a plurality of global distribution circuits 602 and 702 , a mode register set (MRS) 800 and a bias generation circuit 900 .

The clock distribution circuit in accordance with an embodiment may include the plurality of data clock generation circuits 601 and 701 , the plurality of global distribution circuits 602 and 702 and the bias generation circuit 900 .

A power supply voltage VDD is applied to the plurality of DQ arrays 201 , 301 , 401 and 501 .

The power supply voltage VDD and a third bias voltage BIAS 3 are applied to the plurality of local networks 202 , 302 , 402 and 502 .

The power supply voltage VDD and a first bias voltage BIAS 1 are applied to the plurality of data clock generation circuits 601 and 701 .

The power supply voltage VDD, the first bias voltage BIAS 1 and a second bias voltage BIAS 2 are applied to the plurality of global distribution circuits 602 and 702 .

The power supply voltage VDD is applied to the mode register set 800 and the bias generation circuit 900 .

The plurality of DQ arrays 201 , 301 , 401 and 501 and the plurality of local networks 202 , 302 , 402 and 502 may be arranged in the local region.

The plurality of data clock generation circuits 601 and 701 , the plurality of global distribution circuits 602 and 702 , the MRS 800 and the bias generation circuit 900 may be arranged in the center region.

The configuration in which the MRS 800 and the bias generation circuit 900 are arranged in the center region is only an example, and the MRS 800 and the bias generation circuit 900 may be arranged in the local region.

The plurality of DQ arrays 201 , 301 , 401 and 501 may be configured in the same manner.

Each of the DQ arrays 201 , 301 , 401 and 501 may include a plurality of DQ circuits.

The DQ circuits, which are data input/output terminals of the semiconductor device 100 , may include a pad, a receiver for receiving data through the pad, and a driver for driving data outputted from the semiconductor device to the pad.

The number of DQ circuits included in each of the DQ arrays 201 , 301 , 401 and 501 may be changed depending on the bandwidth option (X16 or X32) of the semiconductor device. The number of DQ circuits included in each of the DQ arrays 201 , 301 , 401 and 501 may be changed depending on the bandwidth option (X16 or X32) of the semiconductor device.

The plurality of local networks 202 , 302 , 402 and 502 may be configured in the same manner.

The plurality of local networks 202 , 302 , 402 and 502 may convert a second internal clock signal iWCK 2 /iWCK 2 B transmitted from the center region through the global line GIO to the CMOS level, and distribute the adjusted clock signal to the plurality of DQ arrays 201 , 301 , 401 and 501 according to the power supply voltage VDD.

The plurality of local networks 202 , 302 , 402 and 502 may control swing width of its own outputs according to a third bias voltage BIAS 3 .

The plurality of data clock generation circuits 601 and 701 may be configured in the same manner.

The plurality of data clock generation circuits 601 and 701 may generate a first internal clock signal iWCK 1 /iWCK 1 B using an external clock signal or a second external clock signal WCK/WCKB provided from the host 11 , according to the power supply voltage VDD.

The plurality of data clock generation circuits 601 and 701 may control a swing width of the first internal clock signal iWCK 1 /iWCK 1 B according to the first bias voltage BIAS 1 .

The plurality of global distribution circuits 602 and 702 may be configured in the same manner.

The plurality of global distribution circuits 602 and 702 may generate the second internal clock signal iWCK 2 /iWCK 2 B by driving the first internal clock signal iWCK 1 /iWCK 1 B according to the power supply voltage VDD, and may distribute the second internal clock signal iWCK 2 /iWCK 2 B to an exterior of the clock distribution circuit through the global line GIO.

The plurality of global distribution circuits 602 and 702 may control a swing width of one output of internal signals according to the first bias voltage BIAS 1 and control a swing width of another output of the internal signals according to the second bias voltage BIAS 2 .

Each of the global distribution circuits 602 and 702 may provide the second bias voltage BIAS 2 to a logic circuit which drives the second internal clock signal iWCK 2 /iWCK 2 B to the global line GIO, among internal logic circuits thereof, and provide the first bias voltage BIAS 1 to the other logic circuits.

The MRS 800 may store and output a first bias code CODE1<0:M>, a second bias code CODE2<0:N> and a third bias code CODE3<0:L>.

The first bias code CODE1<0:M>, the second bias code CODE2<0:N> and the third bias code CODE3<0:L> may have specific initial values which can be varied.

The host 11 may independently adjust the values of the first bias code CODE1<0:M>, the second bias code CODE2<0:N> and the third bias code CODE3<0:L> by changing the settings of the MRS 800 using the command and address signal CA.

The bias generation circuit 900 may generate the first to third bias voltages BIAS 1 to BIAS 3 at independent levels, according to the first bias code CODE1<0:M>, the second bias code CODE2<0:N> and the third bias code CODE3<0:L> using the power supply voltage VDD.

The bias generation circuit 900 may generate the first bias voltage BIAS 1 according to the first bias code CODE1<0:M>, generate the second bias voltage BIAS 2 according to the second bias code CODE2<0:N>, and generate the third bias voltage BIAS 3 according to the third bias code CODE2<0:L>.

FIG. 3 illustrates the configuration of the local network of FIG. 2 .

Since the plurality of local networks 202 , 302 , 402 and 502 are configured in the same manner, the configuration of one of the local networks 202 , 302 , 402 and 502 will be representatively described.

Referring to FIG. 3 , the local network 202 may include a converter 220 and a clock distributor 230 .

Since the second internal clock signal iWCK 2 /iWCK 2 B is transferred through the global line GIO, the signal characteristic may be reduced.

Therefore, the local network 202 may further include a repeater 210 for compensating for the reduction in signal characteristic of the second internal clock signal iWCK 2 /iWCK 2 B.

The repeater 210 may amplify the second internal dock signal iWCK 2 /iWCK 2 B according to the power supply voltage VDD, and retransmit the amplified signal.

The repeater 210 may control swing width of its own output according to the third bias BIAS 3 .

The converter 220 and the clock distributor 230 may be implemented with CMOS logic circuits.

The converter 220 may generate an output signal iWCK 2 _CMOS/iWCK 2 B_CMOS by converting the second internal clock signal iWCK 2 /iWCK 2 B transmitted at the CML level into the CMOS level.

The clock distributor 230 may distribute the output signal iWCK 2 _CMOS/iWCK 2 B_CMOS of the converter 220 to the DQ circuits of the DQ array 201 according to a read enable signal Read_EN and write enable signal Write_EN.

FIG. 4 illustrates the configuration of the repeater of FIG. 3 .

As illustrated in FIG. 4 , the repeater may include a first amplification circuit 211 and a second amplification circuit 212 .

The first amplification circuit 211 may amplify the second internal clock signal iWCK 2 /iWCK 2 B according to the power supply voltage VDD, and output the amplified signal.

The first amplification circuit 211 may be activated according to an enable signal EN.

The first amplification circuit 211 may control a swing width of its own output OUT/OUTB according to the third bias voltage BIAS 3 .

The first amplification circuit 211 may control the swing width of its own output applying the third bias voltage BIAS 3 to gates of current sink transistors 211 - 1 - 211 - 2 coupled to a ground terminal.

The second amplification circuit 212 may amplify the output of the first amplification circuit 211 according to the power supply voltage VDD, and output the amplified signal.

The second amplification circuit 212 may be activated according to an enable signal EN.

The second amplification circuit 212 may control a swing width of its own output OUT/OUTB according to the third bias voltage BIAS 3 .

The second amplification circuit 212 may control the swing width of its own output OUT/OUTB by applying the third bias voltage BIAS 3 to gates of current sink transistors 212 - 1 - 212 - 2 coupled to a ground terminal.

FIG. 5 illustrates the configuration of the converter of FIG. 3 .

As illustrated in FIG. 5 , the converter 220 may include a plurality of capacitors 211 , a plurality of resistors 212 and a plurality of inverters 213 , and generate the output signal iWCK 2 _CMOS/iWCK 2 B_CMOS by converting the second internal clock signal iWCK 2 /iWCK 2 B into the CMOS level.

FIG. 6 illustrates the configuration of the clock distributor of FIG. 3 .

As illustrated in FIG. 6 , the clock distributor 230 may include a plurality of NAND gates 221 and a plurality of inverters 222 .

When the read enable signal Read_EN or the write enable signal Write_EN is activated, the clock distributor 230 may transmit the output signal iWCK 2 _CMOS/iWCK 2 B_CMOS of the converter 220 to the DQ circuits of the DQ array 201 through independent paths, that is, a first path 223 for a read operation and a second path 224 for a write operation.

FIG. 7 illustrates the configuration of the data clock generation circuit of FIG. 2 .

Since the plurality of data clock generation circuits 601 and 701 are configured in the same manner, the configuration of one of the data clock generation circuits 601 and 701 will be representatively described.

Referring to FIG. 6 , the data clock generation circuit 601 may include a receiver 610 and a divider 611 .

The receiver 610 and the divider 611 may be implemented with CML circuits.

The receiver 610 may receive an external clock signal WCK/WCKB according to the power supply voltage VDD, and output the received signal.

The receiver 610 may control a swing width of its own output according to the first bias voltage BIAS 1 .

The divider 611 may divide the output of the receiver 610 according to the power supply voltage VDD, and output the divided signal as the first internal clock signal iWCK 1 /iWCK 1 B.

The divider 611 may control a swing width of the first internal clock signal iWCK 1 /iWCK 1 B according to the first bias voltage BIAS 1 .

As described above, the external clock signal WCK/WCKB, which is a high-speed clock signal having a frequency of 8 GHz, for example, may have a timing margin which is not enough to be used for signal processing in the semiconductor device 100 . Therefore, the clock distribution circuit in accordance with an embodiment may use the first internal clock signal iWCK 1 /iWCK 1 B obtained by dividing the external clock signal WCK/WCKB at a predetermined division ratio (for example, 1/2, 1/4 or 1/8).

FIG. 8 illustrates the configuration of the global distribution circuit of FIG. 2 .

Since the plurality of global distribution circuits 602 and 702 are configured in the same manner, the configuration of one of the global distribution circuits 602 and 702 will be representatively described.

Referring to FIG. 8 , the global distribution circuit 602 may include a repeater 620 and a plurality of buffers 621 and 622 .

The repeater 620 and the plurality of buffers 621 and 622 may be implemented with CML circuits.

The repeater 620 may be configured on the same manner of the repeater 210 of FIG. 4 .

The repeater 620 may amplify the first internal clock signal iWCK 1 /iWCK 1 B according to the power supply voltage VDD, and retransmit the amplified signal.

The repeater 620 may control swing width of its own output according to the first bias BIAS 1 .

The plurality of buffers 621 and 622 may transmit the output signal of the repeater 620 as the second internal clock signal iWCK 2 /iWCK 2 B to the local networks 202 and 320 through the global line GIO according to the power supply voltage VDD.

The plurality of buffers 621 and 622 may control swing width of the second internal clock signal iWCK 2 /iWCK 2 B according to the second bias voltage BIAS 2 .

As described above, the clock distribution circuit of the semiconductor device in accordance with an embodiment can provide the second bias voltage BIAS 2 to logic circuits (the buffers 621 and 622 of the global distribution circuit 602 ) which transfer signals to the local region through the global line, among the logic circuits of the center region, provide the first bias voltage BIAS 1 to the other logic circuits (the data clock generation circuit 601 and the repeater 620 of the global distribution circuit 602 ), and independently control the levels of the first and second bias voltages BIAS 1 and BIAS 2 .

FIG. 9 illustrates the configuration of the bias generation circuit of FIG. 2 .

Referring to FIG. 9 , the bias generation circuit 900 may include a first digital-analog converter DAC1 910 , a second digital-analog converter DAC2 920 , and a third digital-analog converter DAC3 930 .

The first digital-analog converter 910 may convert a digital signal or the first bias code CODE1<0:M> into an analog voltage or the first bias voltage BIAS 1 according to the power supply voltage VDD.

The second digital-analog converter 920 may convert a digital signal or the second bias code CODE2<0:N> into an analog voltage or the second bias voltage BIAS 2 according to the power supply voltage VDD.

The third digital-analog converter 930 may convert a digital signal or the third bias code CODE3<0:L> into an analog voltage or the third bias voltage BIAS 3 according to the power supply voltage VDD.

The first to third bias voltages BIAS 1 to BIAS 3 may have independent or different levels or the same level, depending on the values of the first bias code CODE1<0:M>, the second bias code CODE2<0:N> and the third bias code CODE3<0:L>.

Since the plurality of buffers 621 and 622 transmit a signal from the center region to the local region through the global line GIO, the plurality of buffers 621 and 622 may require higher drivability than the other circuits of the center region. Therefore, the values of the first bias code CODE1<0:M> and the second bias code CODE2<0:N> may be set in such a manner that the second bias voltage BIAS 2 provided to the plurality of buffers 621 and 622 has a higher level than the first bias voltage BIAS 1 .

Since the repeater 210 of the local network 202 among the logic circuits of the local region receives the clock signal at the CML level, the repeater 210 may independently control the level of the third bias voltage BIAS 3 regardless of the first and second bias voltages BIAS 1 and BIAS 2 . Depending on the circuit design and operation environment, the repeater 210 can control the third bias voltage BIAS 3 to the same level as the first or second bias voltage BIAS 1 or BIAS 2 .

As described above, the values of the first bias code CODE1<0:M>, the second bias code CODE2<0:N> and the third bias code CODE3<0:L> may be adjusted by the host 11 .

The first to third digital-analog converters 910 , 920 and 930 may be configured in the same manner. Therefore, the configuration of one of the first to third digital-analog converters 910 , 920 and 930 will be representatively described.

FIG. 10 illustrates the configuration of the first digital-analog converter of FIG. 9 .

As illustrated in FIG. 10 , the first digital-analog converter may include an amplifier 911 , lag circuits 912 and 913 and resistors 914 .

The lag circuits 912 and 913 may operate according to the power supply voltage VDD.

One of the lag circuits 912 and 913 may be basically set in an operation state regardless of the first bias code CODE1<0:M>, and thus referred to as a reference lag circuit.

The amplifier 911 may be operated to equalize an output level of the reference lag circuit 912 to a reference voltage VREF.

The other lag circuits 913 may be selectively operated according to the respective signal bits of the first bias code CODE1<0:M>, such that the first bias voltage BIAS 1 has a value corresponding to the first bias code CODE1<0:M>.

While various embodiments have been described above, it will be understood to those skilled in the art that the embodiments described are examples only. Accordingly, the operating method of a data storage device described herein should not be limited based on the described embodiments.