Magnetic sensor and diagnostic device

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-167630, filed on Sep. 13, 2019, and Japanese Patent Application No. 2020-040055, filed on Mar. 9, 2020; the entire contents of which are incorporated herein by reference.

Embodiments described herein relate generally to a magnetic sensor and a diagnostic device.

There is a magnetic sensor using a magnetic layer. There is a diagnostic device using the magnetic sensor. It is desirable to increase the sensitivity of the magnetic sensor.

FIG. 1A and FIG. 1B are schematic views illustrating a magnetic sensor according to a first embodiment;

FIG. 2 is a table illustrating characteristics of the magnetic sensor;

FIG. 3 is a graph illustrating a characteristic of the magnetic sensor according to the first embodiment;

FIG. 4A to FIG. 4C are graphs illustrating characteristics of the magnetic sensor according to the first embodiment;

FIG. 5A and FIG. 5B are schematic views illustrating detection circuits of magnetic sensors according to the first embodiment;

FIG. 6 is a schematic cross-sectional view illustrating a magnetic sensor according to the first embodiment;

FIG. 7 is a schematic cross-sectional view illustrating a magnetic sensor according to the first embodiment;

FIG. 8 is a schematic plan view illustrating a magnetic sensor according to the first embodiment;

FIG. 9A and FIG. 9B are schematic views illustrating the magnetic sensor according to the first embodiment;

FIG. 10A and FIG. 10B are schematic views illustrating the magnetic sensor according to the first embodiment;

FIG. 11A and FIG. 11B are schematic views illustrating the magnetic sensor according to the first embodiment;

FIG. 12A and FIG. 12B are schematic cross-sectional views illustrating magnetic sensors according to the first embodiment;

FIG. 13A and FIG. 13B are schematic views illustrating a magnetic sensor according to a second embodiment;

FIG. 14 is a schematic plan view illustrating the magnetic sensor according to the second embodiment;

FIG. 15 is a graph illustrating a characteristic of the magnetic sensor according to the second embodiment;

FIG. 16A to FIG. 16D are schematic views illustrating portions of the magnetic sensor according to the second embodiment;

FIG. 17A to FIG. 17D are schematic views illustrating portions of the magnetic sensor according to the second embodiment;

FIG. 18 is a schematic plan view illustrating a magnetic sensor according to the second embodiment;

FIG. 19A and FIG. 19B are schematic views illustrating the magnetic sensor according to the second embodiment;

FIG. 20 is a schematic view illustrating the magnetic sensor according to the second embodiment;

FIG. 21A and FIG. 21B are schematic views illustrating the magnetic sensor according to the second embodiment;

FIG. 22 is a schematic view illustrating the magnetic sensor according to the second embodiment;

FIG. 23A and FIG. 23B are schematic views illustrating the magnetic sensor according to the second embodiment;

FIG. 24 is a schematic view illustrating the magnetic sensor according to the second embodiment;

FIG. 25 is a schematic perspective view showing an application example of the magnetic sensor according to the embodiment;

FIG. 26 is a schematic plan view showing the application example of the magnetic sensor according to the embodiment;

FIG. 27 is a schematic view showing a magnetic sensor and a diagnostic device according to a third embodiment;

FIG. 28 is a schematic view showing the magnetic sensor according to the third embodiment;

FIG. 29A to FIG. 29D are schematic views illustrating a magnetic sensor according to a fourth embodiment;

FIG. 30A to FIG. 30D are schematic views illustrating a magnetic sensor according to the fourth embodiment;

FIG. 31 is a schematic plan view illustrating a magnetic sensor according to the fourth embodiment;

FIG. 32 is a schematic plan view illustrating a magnetic sensor according to the fourth embodiment;

FIG. 33A to FIG. 33C are schematic views illustrating a magnetic sensor according to the fourth embodiment;

FIG. 34A to FIG. 34C are schematic views illustrating a magnetic sensor according to the fourth embodiment;

FIG. 35A to FIG. 35C are schematic views illustrating a magnetic sensor according to the fourth embodiment;

FIG. 36 is a schematic view illustrating the magnetic sensor according to the fourth embodiment;

FIG. 37A to FIG. 37C are schematic views illustrating a magnetic sensor according to the fourth embodiment;

FIG. 38 is a schematic view illustrating the magnetic sensor according to the fourth embodiment;

FIG. 39A to FIG. 39D are schematic views illustrating a magnetic sensor according to the fourth embodiment;

FIG. 40A to FIG. 40D are schematic views illustrating a magnetic sensor according to the fourth embodiment;

FIG. 41 is a schematic plan view illustrating a magnetic sensor according to the fourth embodiment;

FIG. 42A to FIG. 42C are schematic views illustrating a magnetic sensor according to the fourth embodiment;

FIG. 43A to FIG. 43C are schematic views illustrating a magnetic sensor according to the fourth embodiment; and

FIG. 44 is a schematic view illustrating a magnetic sensor according to the fourth embodiment.

According to one embodiment, a magnetic sensor comprises a first structure body. The first structure body including a first magnetic part, a second magnetic part, a first conductive member, a first magnetic layer, a second magnetic layer, a first nonmagnetic portion, and a second nonmagnetic portion. The first magnetic part includes a first portion, a second portion, and a third portion. A direction from the second portion toward the third portion is aligned with a first direction. The first portion is between the second portion and the third portion in the first direction. The first portion has a first length and a second length. The first length is along a second direction crossing the first direction. The second length is along a third direction crossing a plane including the first direction and the second direction. The second portion has at least one of a third length along the second direction or a fourth length along the third direction. The third length is longer than the first length. The fourth length is longer than the second length. The third portion has at least one of a fifth length along the second direction or a sixth length along the third direction. The fifth length is longer than the first length. The sixth length is longer than the second length. The second magnetic part includes a fourth portion, a fifth portion, and a sixth portion. A direction from the fifth portion toward the sixth portion is aligned with the first direction. The fourth portion is between the fifth portion and the sixth portion in the first direction. The fourth portion has a seventh length along the second direction and an eighth length along the third direction. The fifth portion has at least one of a ninth length along the second direction or a tenth length along the third direction. The ninth length is longer than the seventh length. The tenth length is longer than the eighth length. The sixth portion has at least one of an eleventh length along the second direction or a twelfth length along the third direction. The eleventh length is longer than the seventh length. The twelfth length is longer than the eighth length. A direction from a portion of the first portion toward a portion of the first conductive member is aligned with the second direction. A direction from a portion of the fourth portion toward an other portion of the first conductive member is aligned with the second direction. The first magnetic layer is provided between the portion of the first portion and the portion of the first conductive member. The second magnetic layer is provided between the portion of the fourth portion and the other portion of the first conductive member. The first nonmagnetic portion is provided between the first magnetic layer and the portion of the first portion. The second nonmagnetic portion is provided between the second magnetic layer and the portion of the fourth portion.

Various embodiments are described below with reference to the accompanying drawings.

The drawings are schematic and conceptual; and the relationships between the thickness and width of portions, the proportions of sizes among portions, etc., are not necessarily the same as the actual values. The dimensions and proportions may be illustrated differently among drawings, even for identical portions.

In the specification and drawings, components similar to those described previously or illustrated in an antecedent drawing are marked with like reference numerals, and a detailed description is omitted as appropriate.

First Embodiment

FIG. 1A and FIG. 1B are schematic views illustrating a magnetic sensor according to a first embodiment.

FIG. 1A is a plan view as viewed along arrow AR of FIG. 1B . FIG. 1B is a line A 1 -A 2 cross-sectional view of FIG. 1A .

As shown in FIG. 1A and FIG. 1B , the magnetic sensor 110 according to the embodiment includes a first element E 1 . The first element E 1 includes a first magnetic part 10 A, a first magnetic layer 11 L, a first nonmagnetic portion 11 n , and a first intermediate magnetic layer 11 i.

The first magnetic part 10 A includes a first portion p 1 , a second portion p 2 , and a third portion p 3 . The direction from the second portion p 2 toward the third portion p 3 is aligned with a first direction D 1 .

The first direction D 1 is taken as an X-axis direction. One direction perpendicular to the X-axis direction is taken as a Z-axis direction. A direction perpendicular to the X-axis direction and the Z-axis direction is taken as a Y-axis direction.

The first portion p 1 is between the second portion p 2 and the third portion p 3 in the first direction D 1 . The first portion p 1 has a first length L 1 and a second length L 2 . The first length L 1 is the length along a second direction D 2 of the first portion p 1 .

The second direction D 2 crosses the first direction D 1 . The second direction D 2 is, for example, the Z-axis direction. Hereinbelow, the second direction D 2 is taken as the Z-axis direction.

The second length L 2 is the length along a third direction D 3 of the first portion p 1 . The third direction D 3 crosses a plane including the first direction D 1 and the second direction D 2 . The third direction D 3 is, for example, the Y-axis direction. Hereinbelow, the third direction D 3 is taken as the Y-axis direction.

The second portion p 2 has at least one of a third length L 3 along the second direction D 2 that is longer than the first length L 1 , or a fourth length L 4 along the third direction D 3 that is longer than the second length L 2 . In the example, the third length L 3 is longer than the first length L 1 ; and the fourth length L 4 is longer than the second length L 2 .

The third portion p 3 has at least one of a fifth length L 5 along the second direction D 2 that is longer than the first length L 1 , or a sixth length L 6 along the third direction D 3 that is longer than the second length L 2 . In the example, the fifth length L 5 is longer than the first length L 1 ; and the sixth length L 6 is longer than the second length L 2 .

The direction from the first portion p 1 toward the first magnetic layer 11 L is aligned with the second direction D 2 . The first nonmagnetic portion 11 n is provided between the first portion p 1 and the first magnetic layer 11 L. The first nonmagnetic portion 11 n includes, for example, MgO. The first intermediate magnetic layer 11 i is provided between the first portion p 1 and the first nonmagnetic portion 11 n . The first intermediate magnetic layer 11 i includes, for example, CoFeB. For example, the magnetization of the first intermediate magnetic layer 11 i is aligned with the magnetization of the first magnetic part 10 A. For example, the magnetization of the first intermediate magnetic layer 11 i and the magnetization of the first magnetic part 10 A are aligned with the third direction D 3 when the external magnetic field is substantially zero. The first intermediate magnetic layer 11 i , the first nonmagnetic portion 11 n , and the first magnetic layer 11 L are included in a first stacked body SB 1 .

The external magnetic field which is the detection object is applied along the first direction D 1 to the first element E 1 . The external magnetic field enters the first magnetic part 10 A; and the magnetic field concentrates in the first portion p 1 . The magnetization of the first intermediate magnetic layer 11 i is affected by the first portion p 1 where the concentration occurs. On the other hand, a magnetization 11 LM of the first magnetic layer 11 L is substantially fixed. The angle between the magnetization of the first intermediate magnetic layer 11 i and the magnetization 11 LM of the first magnetic layer 11 L change due to the external magnetic field. The electrical resistance between the first magnetic part 10 A and the first magnetic layer 11 L changes according to the magnetic field (the external magnetic field) applied to the first element E 1 . The external magnetic field that is applied to the first element E 1 can be detected by detecting the electrical resistance between the first magnetic part 10 A and the first magnetic layer 11 L.

For example, the first magnetic part 10 A functions as a MFC (Magnetic Field Concentrator). For example, the first stacked body SB 1 which includes the first intermediate magnetic layer 11 i , the first nonmagnetic portion 11 n , and the first magnetic layer 11 L functions as a TMR (Tunnel Magneto Resistance Effect) element.

The first magnetic part 10 A includes, for example, at least one selected from the group consisting of a Co-based amorphous alloy and a NiFe alloy. The soft magnetic properties of these materials are good. For example, a high permeability is obtained by using these materials. For example, the first intermediate magnetic layer 11 i is magnetically coupled with the first magnetic part 10 A. For example, the first intermediate magnetic layer 11 i is in contact with the first magnetic part 10 A.

As recited above, a change of the length (the width or the thickness) is provided in the first magnetic part 10 A. Thereby, the magnetic field concentrates easily in the first portion p 1 . High sensitivity is obtained thereby. According to the embodiment, a magnetic sensor can be provided in which the sensitivity can be increased.

As shown in FIG. 1B , the first magnetic part 10 A may include a first layer portion 10 p and a second layer portion 10 q . The second portion p 2 and the third portion p 3 include the first layer portion 10 p and the second layer portion 10 q . The first portion p 1 includes the first layer portion 10 p but does not include the second layer portion 10 q . Multiple portions that have mutually-different thicknesses (lengths in the second direction D 2 ) are obtained using the first layer portion 10 p and the second layer portion 10 q . The boundary between the first layer portion 10 p and the second layer portion 10 q may be indistinct.

An example of simulation results of characteristics of the magnetic sensor will now be described. In the model of the simulation, a length Lx 1 in the first direction D 1 of the first portion p 1 (referring to FIG. 1B ) is 5 μm. The length Lx 1 corresponds to the distance between the second portion p 2 and the third portion p 3 . A length Lx 2 along the first direction D 1 of the stacked body SB 1 (referring to FIG. 1B ) is 4 μm. A length Lx 3 along the first direction D 1 of the first magnetic part 10 A is 2000 μm. A thickness t 1 of the first layer portion 10 p (referring to FIG. 1B ) is 0.02 μm. A thickness t 2 of the second layer portion 10 q (referring to FIG. 1B ) is modified. The thickness t 1 corresponds to the first length L 1 of the first portion p 1 . The sum of the thickness t 1 and the thickness t 2 corresponds to the third length L 3 of the second portion p 2 . The fifth length L 5 is the same as the third length L 3 . The fourth length L 4 of the second portion p 2 (referring to FIG. 1A ) is 1000 μm. The sixth length L 6 of the third portion p 3 is the same as the fourth length L 4 of the second portion p 2 . The second length L 2 of the first portion p 1 (referring to FIG. 1A ) is modified. The length changes linearly between the fourth length L 4 and the second length L 2 . The length changes linearly between the sixth length L 6 and the second length L 2 .

The relative permeability of the first magnetic part 10 A is 2000. The magnetic properties of NiFe are applied to the magnetic properties of the first magnetic part 10 A. The thickness of the first intermediate magnetic layer 11 i is 2 nm. The ratio of the thickness t 1 (20 nm) of the first layer portion 10 p of the first magnetic part 10 A to the thickness of the first intermediate magnetic layer 11 i is 10. For example, when the thickness of the first intermediate magnetic layer 11 i is thin and the ratio of the thickness t 1 of the first layer portion 10 p of the first magnetic part 10 A to the thickness of the first intermediate magnetic layer 11 i is high (about 10 times or more), a high permeability similar to that of NiFe is obtained even when the first intermediate magnetic layer 11 i includes CoFeB because the first intermediate magnetic layer 11 i is magnetically coupled with the first magnetic part 10 A.

FIG. 2 is a table illustrating characteristics of the magnetic sensor.

The fourth length L 4 , the second length L 2 , the thickness t 1 , and the thickness t 2 for first to eighth models MD 1 to MD 8 are shown in FIG. 2 . In the first model MD 1 , the fourth length L 4 is the same as the second length L 2 ; and the thickness t 2 is 0. A gain G that is referenced to the rotation rate of the magnetization of the first intermediate magnetic layer 11 i is used for the first model MD 1 . The gain G corresponds to the increase factor of the rotation rate increase. The gain G of the first model MD 1 is 1.

It can be seen from the first to fourth models MD 1 to MD 4 that the gain G increases as the second length L 2 shortens. It can be seen from the fifth to eighth models MD 5 to MD 8 that the gain G increases as the thickness t 2 increases. An extremely large gain G is obtained for the eighth model MD 8 . The gain G of the eighth model MD 8 is 103.

According to the embodiment, a large gain G is obtained. A magnetic sensor is obtained in which the sensitivity can be increased.

In the embodiment, the change of the length between the third length L 3 and the first length L 1 may be continuous or step-like. For example, the length increases monotonously from the first length L 1 toward the third length L 3 . The change of the length between the fourth length L 4 and the second length L 2 may be continuous or step-like. For example, the length increases monotonously from the second length L 2 toward the fourth length L 4 .

In the embodiment, the change of the length between the fifth length L 5 and the first length L 1 may be continuous or step-like. For example, the length increases monotonously from the first length L 1 toward the fifth length L 5 . The change of the length between the sixth length L 6 and the second length L 2 may be continuous or step-like. For example, the length increases monotonously from the second length L 2 toward the sixth length L 6 .

For example, the magnetization 11 LM of the first magnetic layer 11 L is aligned with the third direction D 3 .

The magnetization of the first portion p 1 is aligned with the orientation of a magnetization p 2 M of the second portion p 2 and aligned with the orientation of a magnetization p 3 M of the third portion p 3 . For example, when the external magnetic field is substantially zero, the orientation of the magnetization p 2 M of the second portion p 2 is aligned with the third direction D 3 . The orientation of the magnetization p 3 M of the third portion p 3 is aligned with the third direction D 3 .

For example, the external magnetic field is aligned with the X-axis direction. The orientation of the magnetization of the first magnetic part 10 A changes due to the external magnetic field. Thereby, the orientation of the magnetization of the first intermediate magnetic layer 11 i changes. For example, when the external magnetic field is 0, the angle between the magnetization of the first intermediate magnetic layer 11 i and the magnetization 11 LM of the first magnetic layer 11 L is substantially 0. At this time, the resistance (the electrical resistance between the first magnetic part 10 A and the first magnetic layer 11 L) is low. When the external magnetic field is not 0, the angle between the magnetization of the first intermediate magnetic layer 11 i and the magnetization 11 LM of the first magnetic layer 11 L increases. At this time, the resistance is high.

For example, the first element E 1 includes a first terminal T 1 and a second terminal T 2 . The first terminal T 1 is electrically connected to the first magnetic part 10 A. The second terminal T 2 is electrically connected to the first magnetic layer 11 L.

As shown in FIG. 1B , the magnetic sensor 110 may further include a circuit part 70 . The circuit part 70 includes, for example, a detection circuit 70 d . The detection circuit 70 d is configured to detect a value corresponding to the electrical resistance between the first magnetic part 10 A and the first magnetic layer 11 L. The detection circuit 70 d includes, for example, a bias voltage application part 70 da and a detector 70 dd . For example, the bias voltage application part 70 da applies a bias voltage Vb between the first terminal T 1 and the second terminal T 2 . The detector 70 dd detects a value (a signal) corresponding to the electrical resistance between the first terminal T 1 and the second terminal T 2 .

For example, the first element E 1 includes a first interconnect 51 . The first interconnect 51 includes a portion 51 p extending along the third direction D 3 . For example, at least a portion of the first interconnect 51 overlaps at least a portion of the first portion p 1 in the second direction D 2 . A current magnetic field that is based on a current flowing in the first interconnect 51 is applied efficiently to the first stacked body SB 1 .

As shown in FIG. 1A , the circuit part 70 may include a current supply circuit 70 a . The current supply circuit 70 a is configured to supply an alternating current to the first interconnect 51 . The external magnetic field and the current magnetic field due to the alternating current flowing in the first interconnect 51 are applied to the first intermediate magnetic layer 11 i . A change of the electrical resistance occurs according to the current magnetic field and the external magnetic field. As described below, the noise can be reduced by processing a signal corresponding to the change of the electrical resistance.

FIG. 3 is a graph illustrating a characteristic of the magnetic sensor according to the first embodiment.

The horizontal axis of FIG. 3 is the intensity of an external magnetic field Hex applied to the first element E 1 . The vertical axis is an electrical resistance Rx between the first magnetic part 10 A and the first magnetic layer 11 L. For example, the electrical resistance Rx corresponds to the electrical resistance between the first terminal T 1 and the second terminal T 2 . FIG. 3 corresponds to the R-H characteristic.

As shown in FIG. 3 , the electrical resistance Rx between the first magnetic part 10 A and the first magnetic layer 11 L has an even-function characteristic of a magnetic field (the external magnetic field Hex; e.g., a magnetic field in the first direction D 1 ) applied to the first element E 1 . For example, the electrical resistance Rx has a first value R 1 when a first magnetic field Hex 1 is applied to the first element E 1 . The electrical resistance Rx has a second value R 2 when a second magnetic field Hex 2 is applied to the first element E 1 . The electrical resistance Rx has a third value R 3 when a third magnetic field Hex 3 is applied to the first element E 1 . The absolute value of the first magnetic field Hex 1 is less than the absolute value of the second magnetic field Hex 2 and less than the absolute value of the third magnetic field Hex 3 . For example, the first magnetic field Hex 1 is substantially 0. The orientation of the second magnetic field Hex 2 is the reverse of the orientation of the third magnetic field Hex 3 . The first value R 1 is smaller than the second value R 2 and smaller than the third value R 3 .

An example of the change of the electrical resistance Rx when an alternating current is supplied to the first interconnect 51 and an alternating-current magnetic field due to the alternating current is applied to the first element E 1 will now be described.

FIG. 4A to FIG. 4C are graphs illustrating characteristics of the magnetic sensor according to the first embodiment.

FIG. 4A shows characteristics when a signal magnetic field Hsig (the external magnetic field) applied to the first element E 1 is 0. FIG. 4B shows characteristics when the signal magnetic field Hsig is positive. FIG. 4C shows characteristics when the signal magnetic field Hsig is negative. These figures show the relationship between a magnetic field H and a resistance R (corresponding to the electrical resistance Rx).

As shown in FIG. 4A , when the signal magnetic field Hsig is 0, the resistance R has a characteristic that is symmetric with respect to the positive and negative magnetic field H. When an alternating-current magnetic field Hac is zero, the resistance R is a low resistance Ro. The magnetization of the first intermediate magnetic layer 11 i (e.g., a free layer) rotates substantially identically to the positive and negative magnetic field H. Therefore, a symmetric resistance increase characteristic is obtained. The fluctuation of the resistance R with respect to the alternating-current magnetic field Hac has the same value between the positive and negative polarities. The period of the change of the resistance R is 2 times the period of the alternating-current magnetic field Hac. The change of the resistance R substantially does not include the frequency component of the alternating-current magnetic field Hac.

As shown in FIG. 4B , the characteristic of the resistance R shifts to the positive magnetic field H side when a positive signal magnetic field Hsig is applied. The resistance R becomes large for the alternating-current magnetic field Hac on the positive side. The resistance R becomes small for the alternating-current magnetic field Hac on the negative side.

As shown in FIG. 4C , the characteristic of the resistance R shifts to the negative magnetic field H side when a negative signal magnetic field Hsig is applied. The resistance R becomes small for the alternating-current magnetic field Hac on the positive side. The resistance R becomes large for the alternating-current magnetic field Hac on the negative side.

Resistances R having mutually-different fluctuation occur for the positive and negative alternating-current magnetic field Hac when a signal magnetic field Hsig of a prescribed magnitude is applied. The period of the fluctuation of the resistance R with respect to the positive and negative alternating-current magnetic field Hac is the same as the period of the alternating-current magnetic field Hac. An output voltage that has an alternating current frequency component corresponding to the signal magnetic field Hsig is generated.

The characteristics recited above are obtained in the case where the signal magnetic field Hsig does not change temporally. The case where the signal magnetic field Hsig changes temporally is as follows. The frequency of the signal magnetic field Hsig is taken as a signal frequency fsig. The frequency of the alternating-current magnetic field Hac is taken as an alternating current frequency fac. In such a case, an output that corresponds to the signal magnetic field Hsig at frequencies of fac±fsig is generated.

In the case where the signal magnetic field Hsig changes temporally, the signal frequency fsig is, for example, 1 kHz or less. On the other hand, the alternating current frequency fac is sufficiently higher than the signal frequency fsig. For example, the alternating current frequency fac is not less than 10 times the signal frequency fsig.

For example, there is an application in which the magnetic field generated from a living body is detected using the magnetic sensor 110 . When detecting such a biological magnetic field (e.g., neuromagnetism, cardiomagnetism, a neuron, etc.), the signal frequency fsig is 1 kHz or less. In such a case, the alternating current frequency fac is, for example, 100 kHz or more.

In the magnetic sensor 110 according to the embodiment, the external magnetic field Hex (the signal magnetic field Hsig) which is the detection object can be detected with high sensitivity by using such characteristics. An example of the detection will now be described.

FIG. 5A and FIG. 5B are schematic views illustrating detection circuits of magnetic sensors according to the first embodiment.

A frequency generator 72 G is provided in a magnetic sensor 110 A and a magnetic sensor device 210 A shown in FIG. 5A . The frequency generator 72 G generates a signal having the alternating current frequency fac (a first frequency). This signal is supplied to the current supply circuit 70 a . The current supply circuit 70 a supplies, to the first interconnect 51 , an alternating current having the alternating current frequency fac (the first frequency).

On the other hand, a direct current is supplied by the bias voltage application part 70 da applying the bias voltage Vb to the first stacked body SB 1 .

In the example, the detector 70 dd includes a lock-in amplifier 73 a . The signal that is generated by the frequency generator 72 G and has the alternating current frequency fac (the first frequency) is input to the lock-in amplifier 73 a . For example, the lock-in amplifier 73 a detects an alternating current signal having a frequency in a range including the first frequency (the alternating current frequency fac). In the example, the output of the lock-in amplifier 73 a is output as an output signal SO 1 via a low-pass filter 73 b . Thereby, the output signal SO 1 is a signal corresponding to the signal magnetic field Hsig.

A band-pass filter 73 c and a PSD (phase sensitive detector) circuit 73 d are provided in a magnetic sensor 110 B and a magnetic sensor device 210 B shown in FIG. 5B . A signal that corresponds to the electrical resistance Rx is input to the band-pass filter 73 c . For example, the band-pass filter 73 c attenuates signals of frequencies not less than 2 times the first frequency (the alternating current frequency fac). The output of the band-pass filter 73 c is input to the PSD circuit 73 d . In the example, the output of the band-pass filter 73 c is input to an amplifier 73 e ; and the output of the amplifier 73 e is input to the PSD circuit 73 d . The signal that is generated by the frequency generator 72 G and has the alternating current frequency fac (the first frequency) is input to the PSD circuit 73 d.

For example, the highest frequency of the signal magnetic field Hsig is taken as a maximum frequency fsigm. In such a case, for example, the band-pass filter 73 c transmits frequencies in the range of fac±fsigm. Also, the band-pass filter 73 c attenuates (e.g., cuts) frequency components that are not less than 2 times the alternating current frequency fac.

In such a case as well, the output of the PSD circuit 73 d is output as the output signal SO 1 via the low-pass filter 73 b . Thereby, the output signal SO 1 is a signal corresponding to the signal magnetic field Hsig.

In the embodiment, the detector 70 dd and the detection circuit 70 d may have any configuration.

FIG. 6 is a schematic cross-sectional view illustrating a magnetic sensor according to the first embodiment.

In the magnetic sensor 110 a as shown in FIG. 6 , the first element E 1 may further include a first magnetic member 11 M. Otherwise, the configuration of the magnetic sensor 110 a may be similar to the configuration of the magnetic sensor 110 .

The first magnetic member 11 M is, for example, an antiferromagnetic body. The first magnetic layer 11 L is between the first nonmagnetic portion 11 n and the first magnetic member 11 M in the second direction D 2 . The magnetization of the first magnetic layer 11 L is substantially fixed by the first magnetic member 11 M.

The first magnetic member 11 M includes, for example, at least one selected from the group consisting of Ir—Mn, Pt—Mn, and NiMn.

FIG. 7 is a schematic cross-sectional view illustrating a magnetic sensor according to the first embodiment.

In the magnetic sensor 110 b as shown in FIG. 7 , the first magnetic layer 11 L includes a first magnetic film 11 f , a second magnetic film 12 f , and a first nonmagnetic film 11 nf . Otherwise, the configuration of the magnetic sensor 110 b may be similar to the configuration of the magnetic sensor 110 a.

The second magnetic film 12 f is provided between the first magnetic film 11 f and the first magnetic member 11 M in the second direction D 2 . The first nonmagnetic film 11 nf is provided between the first magnetic film 11 f and the second magnetic film 12 f . For example, the first magnetic film 11 f and the second magnetic film 12 f have antiferromagnetic coupling with each other. A stable magnetization 11 LM of the first magnetic layer 11 L is easier to obtain.

For example, the second magnetic film 12 f includes a CoFe alloy, etc. The first nonmagnetic film 11 nf includes, for example, Ru, etc. The first magnetic film 11 f includes, for example, a stacked film including a CoFeB alloy film and a CoFe alloy film. The CoFe alloy film is provided between the CoFeB alloy film and the first nonmagnetic film 11 nf.

FIG. 8 is a schematic plan view illustrating a magnetic sensor according to the first embodiment.

FIG. 9A , FIG. 9B , FIG. 10A , FIG. 10B , FIG. 11A , and FIG. 11B are schematic views illustrating the magnetic sensor according to the first embodiment.

FIG. 9A is a plan view as viewed along arrow AR of FIG. 9B . FIG. 9B is a line B 1 -B 2 cross-sectional view of FIG. 9A . FIG. 10A is a plan view as viewed along arrow AR of FIG. 10B . FIG. 10B is a line C 1 -C 2 cross-sectional view of FIG. 10A . FIG. 11A is a plan view as viewed along arrow AR of FIG. 11B . FIG. 11B is a line D 1 -D 2 cross-sectional view of FIG. 11A .

As shown in FIG. 8 , the magnetic sensor 111 according to the embodiment further includes a second element E 2 , a third element E 3 , and a fourth element E 4 in addition to the first element E 1 . Configurations similar to the configurations of the first element E 1 in the magnetic sensors 110 , 110 a , and 110 b are applicable to the first element E 1 of the magnetic sensor 111 . Configurations similar to the configurations of the first element E 1 in the magnetic sensors 110 , 110 a , and 110 b are applicable to the second element E 2 , the third element E 3 , and the fourth element E 4 .

As shown in FIG. 9A and FIG. 9B , the second element E 2 includes a second magnetic part 10 B, a second magnetic layer 12 L, a second nonmagnetic portion 12 n , a second intermediate magnetic layer 12 i , and a second interconnect 52 .

The second magnetic part 10 B includes a fourth portion p 4 , a fifth portion p 5 , and a sixth portion p 6 . The direction from the fifth portion p 5 toward the sixth portion p 6 is aligned with a fourth direction D 4 . The fourth direction D 4 is, for example, the X-axis direction. The fourth portion p 4 is between the fifth portion p 5 and the sixth portion p 6 in the fourth direction D 4 . The fourth portion p 4 has a seventh length L 7 along a fifth direction D 5 crossing the fourth direction D 4 , and an eighth length L 8 along a sixth direction D 6 crossing a plane including the fourth direction D 4 and the fifth direction D 5 . The fifth direction D 5 is, for example, the Z-axis direction. The sixth direction D 6 is, for example, the Y-axis direction.

The fifth portion p 5 has at least one of a ninth length L 9 along the fifth direction D 5 that is longer than the seventh length L 7 , or a tenth length L 10 along the sixth direction D 6 that is longer than the eighth length L 8 . The sixth portion p 6 has at least one of an eleventh length L 11 along the fifth direction D 5 that is longer than the seventh length L 7 , or a twelfth length L 12 along the sixth direction D 6 that is longer than the eighth length L 8 .

The direction from the fourth portion p 4 toward the second magnetic layer 12 L is aligned with the fifth direction D 5 . The second nonmagnetic portion 12 n is provided between the fourth portion p 4 and the second magnetic layer 12 L. The second intermediate magnetic layer 12 i is provided between the fourth portion p 4 and the second nonmagnetic portion 12 n . The second interconnect 52 includes a portion 52 p extending along the sixth direction D 6 .

The second intermediate magnetic layer 12 i , the second nonmagnetic portion 12 n , and the second magnetic layer 12 L are included in a second stacked body SB 2 . The electrical resistance of the second stacked body SB 2 changes according to a magnetic field applied to the second element E 2 .

As shown in FIG. 10A and FIG. 10B , the third element E 3 includes a third magnetic part 10 C, a third magnetic layer 13 L, a third nonmagnetic portion 13 n , a third intermediate magnetic layer 13 i , and a third interconnect 53 .

The third magnetic part 10 C includes a seventh portion p 7 , an eighth portion p 8 , and a ninth portion p 9 . The direction from the eighth portion p 8 toward the ninth portion p 9 is aligned with a seventh direction D 7 . The seventh direction D 7 is, for example, the X-axis direction. The seventh portion p 7 is between the eighth portion p 8 and the ninth portion p 9 in the seventh direction D 7 . The seventh portion p 7 has a thirteenth length L 13 along an eighth direction D 8 crossing the seventh direction D 7 , and a fourteenth length L 14 along a ninth direction D 9 crossing a plane including the seventh direction D 7 and the eighth direction D 8 . The eighth direction D 8 is, for example, the Z-axis direction. The ninth direction D 9 is, for example, the Y-axis direction.

The eighth portion p 8 has at least one of a fifteenth length L 15 along the eighth direction D 8 that is longer than the thirteenth length L 13 , or a sixteenth length L 16 along the ninth direction D 9 that is longer than the fourteenth length L 14 .

The ninth portion p 9 has at least one of a seventeenth length L 17 along the eighth direction D 8 that is longer than the thirteenth length L 13 , or an eighteenth length L 18 along the ninth direction D 9 that is longer than the fourteenth length L 14 .

The direction from the seventh portion p 7 toward the third magnetic layer 13 L is aligned with the eighth direction D 8 . The third nonmagnetic portion 13 n is provided between the seventh portion p 7 and the third magnetic layer 13 L. The third intermediate magnetic layer 13 i is provided between the seventh portion p 7 and the third nonmagnetic portion 13 n . The third interconnect 53 includes a portion 53 p extending along the ninth direction D 9 .

The third intermediate magnetic layer 13 i , the third nonmagnetic portion 13 n , and the third magnetic layer 13 L are included in a third stacked body SB 3 . The electrical resistance of the third stacked body SB 3 changes according to a magnetic field applied to the third element E 3 .

As shown in FIG. 11A and FIG. 11B , the fourth element E 4 includes a fourth magnetic part 10 D, a fourth magnetic layer 14 L, a fourth nonmagnetic portion 14 n , a fourth intermediate magnetic layer 14 i , and a fourth interconnect 54 .

The fourth magnetic part 10 D includes a tenth portion p 10 , an eleventh portion p 11 , and a twelfth portion p 12 . The direction from the eleventh portion p 11 toward the twelfth portion p 12 is aligned with a tenth direction D 10 . The tenth direction D 10 is, for example, the X-axis direction. The tenth portion p 10 is between the eleventh portion p 11 and the twelfth portion p 12 in the tenth direction D 10 .

The tenth portion p 10 has a nineteenth length L 19 along an eleventh direction D 11 crossing the tenth direction D 10 , and a twentieth length L 20 along a twelfth direction D 12 crossing a plane including the tenth direction D 10 and the eleventh direction D 11 . The eleventh direction D 11 is, for example, the Z-axis direction. The twelfth direction D 12 is, for example, the Y-axis direction.

The eleventh portion p 11 has at least one of a twenty-first length L 21 along the eleventh direction D 11 that is longer than the nineteenth length L 19 , or a twenty-second length L 22 along the twelfth direction D 12 that is longer than the twentieth length L 20 .

The twelfth portion p 12 has at least one of a twenty-third length L 23 along the eleventh direction D 11 that is longer than the nineteenth length L 19 , or a twenty-fourth length L 24 along the twelfth direction D 12 that is longer than the twentieth length L 20 .

The direction from the tenth portion p 10 toward the fourth magnetic layer 14 L is aligned with the eleventh direction D 11 . The fourth nonmagnetic portion 14 n is provided between the tenth portion p 10 and the fourth magnetic layer 14 L. The fourth intermediate magnetic layer 14 i is provided between the tenth portion p 10 and the fourth nonmagnetic portion 14 n . The fourth interconnect 54 includes a portion 54 p extending along the twelfth direction D 12 .

The fourth intermediate magnetic layer 14 i , the fourth nonmagnetic portion 14 n , and the fourth magnetic layer 14 L are included in a fourth stacked body SB 4 . The electrical resistance of the fourth stacked body SB 4 changes according to a magnetic field applied to the fourth element E 4 .

As shown in FIG. 9A , for example, a magnetization 12 LM of the second magnetic layer 12 L is aligned with the orientation of a magnetization p 5 M of the fifth portion p 5 or the reverse orientation of the magnetization p 5 M. The magnetization 12 LM of the second magnetic layer 12 L is aligned with the orientation of a magnetization p 6 M of the sixth portion p 6 or the reverse orientation of the magnetization p 6 M.

The magnetization of the fourth portion p 4 is aligned with the orientation of the magnetization p 5 M of the fifth portion p 5 and aligned with the orientation of the magnetization p 6 M of the sixth portion p 6 . For example, the orientation of the magnetization p 5 M of the fifth portion p 5 is aligned with the third direction D 3 . The orientation of the magnetization p 6 M of the sixth portion p 6 is aligned with the third direction D 3 . For example, the electrical resistance between the second magnetic part 10 B and the second magnetic layer 12 L has an even-function characteristic of the magnetic field applied to the second element E 2 .

As shown in FIG. 10A , for example, a magnetization 13 LM of the third magnetic layer 13 L is aligned with the orientation of a magnetization p 8 M of the eighth portion p 8 or the reverse orientation of the magnetization p 8 M. The magnetization 13 LM of the third magnetic layer 13 L is aligned with the orientation of a magnetization p 9 M of the ninth portion p 9 or the reverse orientation of the magnetization p 9 M.

The magnetization of the seventh portion p 7 is aligned with the orientation of the magnetization p 8 M of the eighth portion p 8 and aligned with the orientation of the magnetization p 9 M of the ninth portion p 9 . For example, the orientation of the magnetization p 8 M of the eighth portion p 8 is aligned with the third direction D 3 . The orientation of the magnetization p 9 M of the ninth portion p 9 is aligned with the third direction D 3 . For example, the electrical resistance between the third magnetic part 10 C and the third magnetic layer 13 L has an even-function characteristic of the magnetic field applied to the third element E 3 .

As shown in FIG. 11A , for example, a magnetization 14 LM of the fourth magnetic layer 14 L is aligned with the orientation of a magnetization p 11 M of the eleventh portion p 11 or the reverse orientation of the magnetization p 11 M. The magnetization 14 LM of the fourth magnetic layer 14 L is aligned with the orientation of a magnetization p 12 M of the twelfth portion p 12 or the reverse orientation of the magnetization p 12 M.

The magnetization of the tenth portion p 10 is aligned with the orientation of the magnetization p 11 M of the eleventh portion p 11 and aligned with the orientation of the magnetization p 12 M of the twelfth portion p 12 . For example, the orientation of the magnetization p 11 M of the eleventh portion p 11 is aligned with the third direction D 3 . The orientation of the magnetization p 12 M of the twelfth portion p 12 is aligned with the third direction D 3 . For example, the electrical resistance between the fourth magnetic part 10 D and the fourth magnetic layer 14 L has an even-function characteristic of the magnetic field applied to the fourth element E 4 .

As shown in FIG. 9B , for example, a third terminal T 3 is electrically connected to the second magnetic part 10 B. A fourth terminal T 4 is electrically connected to the second magnetic layer 12 L. As shown in FIG. 10B , for example, a fifth terminal T 5 is electrically connected to the third magnetic part 10 C. A sixth terminal T 6 is electrically connected to the third magnetic layer 13 L. As shown in FIG. 11B , for example, a seventh terminal T 7 is electrically connected to the fourth magnetic part 10 D. An eighth terminal T 8 is electrically connected to the fourth magnetic layer 14 L.

As shown in FIG. 8 , the magnetic sensor 111 includes the circuit part 70 . The circuit part 70 includes the current supply circuit 70 a . The current supply circuit 70 a supplies a first alternating current Ia 1 to the first interconnect 51 . The current supply circuit 70 a supplies a second alternating current Ia 2 to the second interconnect 52 . The current supply circuit 70 a supplies a third alternating current Ia 3 to the third interconnect 53 . The current supply circuit 70 a supplies a fourth alternating current Ia 4 to the fourth interconnect 54 .

At the same time, the orientation of the first alternating current Ia 1 and the orientation of the second alternating current Ia 2 are reverse orientations. At the same time, the orientation of a first current magnetic field H 1 generated by the first alternating current Ia 1 and applied to the first portion p 1 is the reverse of the orientation of a second current magnetic field H 2 generated by the second alternating current Ia 2 and applied to the fourth portion p 4 .

At the same time, the orientation of the third alternating current Ia 3 and the orientation of the first alternating current Ia 1 are reverse orientations. At the same time, the orientation of a third current magnetic field H 3 generated by the third alternating current Ia 3 and applied to the seventh portion p 7 is the reverse of the orientation of the first current magnetic field H 1 generated by the first alternating current Ia 1 and applied to the first portion p 1 .

At the same time, the orientation of the fourth alternating current Ia 4 and the orientation of the first alternating current Ia 1 are the same orientation. At the same time, the orientation of a fourth current magnetic field H 4 generated by the fourth alternating current Ia 4 and applied to the tenth portion p 10 is the same as the orientation of the first current magnetic field H 1 generated by the first alternating current Ia 1 and applied to the first portion p 1 .

For example, the bias voltage application part 70 da applies the bias voltage Vb to the first to fourth stacked bodies SB 1 to SB 4 . The first element E 1 and the third element E 3 are connected in series by a current path including the second terminal T 2 , the first terminal T 1 , the fifth terminal T 5 , and the sixth terminal T 6 . The second element E 2 and the fourth element E 4 are connected in series by a current path including the fourth terminal T 4 , the third terminal T 3 , the seventh terminal T 7 , and the eighth terminal T 8 . For example, the bias voltage application part 70 da supplies a direct current to the current path of the first element E 1 and the third element E 3 and the current path of the second element E 2 and the fourth element E 4 .

For example, the detector 70 dd detects a potential difference Vout between an intermediate portion (a first connection point CN 1 ) of the first terminal T 1 and the fifth terminal T 5 and an intermediate portion (a second connection point CN 2 ) of the third terminal T 3 and the seventh terminal T 7 as a signal Vsig. The resistances of the first to fourth elements E 1 to E 4 are the same resistance when the signal magnetic field Hsig is zero. At this time, a potential is not generated between the first connection point CN 1 and the second connection point CN 2 . When the signal magnetic field Hsig is applied, the same resistance fluctuation occurs in the first element E 1 and the fourth element E 4 . The same resistance fluctuation occurs in the second element E 2 and the third element E 3 . The resistance fluctuation of the first element E 1 and the fourth element E 4 and the resistance fluctuation of the second element E 2 and the third element E 3 are the reverse of each other. The potential difference Vout is generated thereby.

The orientation of the first current magnetic field H 1 generated by the first alternating current Ia 1 and applied to the first portion p 1 has a reverse component of the orientation of the second current magnetic field H 2 generated by the second alternating current Ia 2 and applied to the fourth portion p 4 , and has a reverse component of the orientation of the third current magnetic field H 3 generated by the third alternating current Ia 3 and applied to the seventh portion p 7 .

The orientation of the fourth current magnetic field H 4 generated by the fourth alternating current Ia 4 and applied to the tenth portion p 10 has a reverse component of the orientation of the second current magnetic field H 2 , and has a reverse component of the orientation of the third current magnetic field H 3 .

The circuit part 70 further includes the detection circuit 70 d . In the example, for example, the detection circuit 70 d is electrically connected to the first connection point CN 1 and the second connection point CN 2 . The detection circuit 70 d outputs the signal Vsig corresponding to the potential difference Vout between the first connection point CN 1 and the second connection point CN 2 . At the first connection point CN 1 , a first current path c 1 which includes the first magnetic part 10 A and the first magnetic layer 11 L and a third current path c 3 which includes the third magnetic part 10 C and the third magnetic layer 13 L are electrically connected to each other in series. At the second connection point CN 2 , a second current path c 2 which includes the second magnetic part 10 B and the second magnetic layer 12 L and a fourth current path c 4 which includes the fourth magnetic part 10 D and the fourth magnetic layer 14 L are electrically connected to each other in series.

The first current path c 1 which includes the first magnetic part 10 A and the first magnetic layer 11 L and the third current path c 3 which includes the third magnetic part 10 C and the third magnetic layer 13 L are connected in series to each other. The detection circuit 70 d applies the bias voltage Vb to the first current path c 1 and the third current path c 3 connected in series. The second current path c 2 which includes the second magnetic part 10 B and the second magnetic layer 12 L and the fourth current path c 4 which includes the fourth magnetic part 10 D and the fourth magnetic layer 14 L are connected in series to each other. The detection circuit 70 d applies the bias voltage Vb to the second current path c 2 and the fourth current path c 4 connected in series.

Thus, a bridge circuit is formed of the first to fourth elements E 1 to E 4 . The potential difference between the first connection point CN 1 and the second connection point CN 2 corresponds to the potential difference Vout. The detection circuit 70 d is configured to output the signal Vsig corresponding to the potential difference Vout. The signal Vsig includes a signal corresponding to the external magnetic field which is the detection object.

As recited above, the orientation of the first current magnetic field H 1 and the orientation of the fourth current magnetic field H 4 have a reverse component of the orientation of the second current magnetic field H 2 , and have a reverse component of the orientation of the third current magnetic field H 3 . For example, the phase of the alternating-current magnetic field applied to the first portion p 1 and the tenth portion p 10 is the reverse of the phase of the alternating-current magnetic field applied to the fourth portion p 4 and the seventh portion p 7 . For example, when only the alternating-current magnetic field due to the first interconnect 51 is applied to the element (the magnetic field from the outside such as the signal magnetic field Hsig or the like is zero), the voltage that is generated at the first connection point CN 1 can be suppressed drastically (zero if the resistances of the elements are the same); therefore, for example, the unnecessary voltage of the alternating current frequency component due to the detector 70 dd can be reduced. The potential difference Vout of the first connection point CN 1 generated according to the signal magnetic field Hsig in the magnetic sensor 111 is 2 times that of the magnetic sensor 110 .

Thus, for example, the detection circuit 70 d detects the electrical signal of the connection point CN 1 at which the first current path c 1 , the second current path c 2 , the third current path c 3 , and the fourth current path c 4 are connected to each other. For the signal Vsig output from the detection circuit 70 d , the output is increased; and the noise is suppressed. High sensitivity is obtained in the magnetic sensor 111 .

FIG. 12A and FIG. 12B are schematic cross-sectional views illustrating magnetic sensors according to the first embodiment.

FIG. 12A and FIG. 12B correspond to FIG. 1B .

In a magnetic sensor 112 as shown in FIG. 12A , a portion of the first intermediate magnetic layer 11 i overlaps the second portion p 2 and the third portion p 3 in the second direction D 2 . Another portion of the first intermediate magnetic layer 11 i overlaps the first portion p 1 in the second direction D 2 . The thickness of the portion of the first intermediate magnetic layer 11 i recited above may be thinner than the thickness of the other portion of the first intermediate magnetic layer 11 i recited above. Otherwise, the configuration of the magnetic sensor 112 may be similar to that of the magnetic sensor 110 .

In a magnetic sensor 113 as shown in FIG. 12B as well, the first magnetic part 10 A includes the first portion p 1 . The first portion p 1 includes a portion overlapping the first magnetic layer 11 L in the second direction D 2 , and a portion not overlapping the first magnetic layer 11 L in the second direction D 2 . The thickness (the length along the second direction D 2 ) of the portion overlapping the first magnetic layer 11 L in the second direction D 2 is thicker than the thickness (the length along the second direction D 2 ) of the portion not overlapping the first magnetic layer 11 L in the second direction D 2 . Thus, the first portion p 1 may include portions having mutually-different thicknesses. In such a case, the thickness (the length along the second direction D 2 ) of the portion overlapping the first magnetic layer 11 L in the second direction D 2 may be used as the thickness (the first length L 1 ) of the first portion p 1 . Otherwise, the configuration of the magnetic sensor 113 may be similar to that of the magnetic sensor 110 .

In the magnetic sensors 112 and 113 as well, a magnetic sensor can be provided in which the sensitivity can be increased.

Second Embodiment

FIG. 13A and FIG. 13B are schematic views illustrating a magnetic sensor according to a second embodiment.

FIG. 14 is a schematic plan view illustrating the magnetic sensor according to the second embodiment.

FIG. 13A is a plan view as viewed along arrow AR of FIG. 13B . FIG. 13B is an Ax 1 -Ax 2 line cross-sectional view of FIG. 13A . FIG. 14 illustrates a portion of the magnetic sensor 120 .

As shown in FIG. 13A and FIG. 13B , the magnetic sensor 120 according to the embodiment includes the first element E 1 . The first element E 1 includes the first magnetic part 10 A, a first counter magnetic part 10 Ac, the first nonmagnetic portion 11 n , the first intermediate magnetic layer 11 i , and a first counter intermediate magnetic layer 11 ic.

The first magnetic part 10 A includes the first portion p 1 , the second portion p 2 , and the third portion p 3 . The direction from the second portion p 2 toward the third portion p 3 is aligned with the first direction D 1 . The first direction D 1 is, for example, the X-axis direction. The first portion p 1 is between the second portion p 2 and the third portion p 3 in the first direction D 1 .

The first portion p 1 has the first length L 1 along the second direction D 2 crossing the first direction D 1 , and the second length L 2 along the third direction D 3 crossing a plane including the first direction D 1 and the second direction D 2 . The second direction D 2 is, for example, the Z-axis direction. The third direction D 3 is, for example, the Y-axis direction.

The second portion p 2 has at least one of the third length L 3 along the second direction D 2 that is longer than the first length L 1 , or the fourth length L 4 along the third direction D 3 that is longer than the second length L 2 . The third portion p 3 has at least one of the fifth length L 5 along the second direction D 2 that is longer than the first length L 1 , or the sixth length L 6 along the third direction D 3 that is longer than the second length L 2 .

The first counter magnetic part 10 Ac includes the fourth portion p 4 , the fifth portion p 5 , and the sixth portion p 6 . The direction from the first portion p 1 toward the fourth portion p 4 is aligned with the second direction D 2 . The direction from the second portion p 2 toward the fifth portion p 5 is aligned with the second direction D 2 . The direction from the third portion p 3 toward the sixth portion p 6 is aligned with the second direction D 2 . The fourth portion p 4 is between the fifth portion p 5 and the sixth portion p 6 in the first direction D 1 .

The fourth portion p 4 has the seventh length L 7 along the second direction D 2 and the eighth length L 8 along the third direction D 3 . The fifth portion p 5 has at least one of the ninth length L 9 along the second direction D 2 that is longer than the seventh length L 7 , or the tenth length L 10 along the third direction D 3 that is longer than the eighth length L 8 . The sixth portion p 6 has at least one of the eleventh length L 11 along the second direction D 2 that is longer than the seventh length L 7 , or the twelfth length L 12 along the third direction D 3 that is longer than the eighth length L 8 .

The first nonmagnetic portion 11 n is provided between the first portion p 1 and the fourth portion p 4 . The first intermediate magnetic layer 11 i is provided between the first portion p 1 and the first nonmagnetic portion 11 n . The first counter intermediate magnetic layer 11 ic is provided between the first nonmagnetic portion 11 n and the fourth portion p 4 .

In the magnetic sensor 120 , by using the first magnetic part 10 A and the first counter magnetic part 10 Ac having the configurations recited above, the external magnetic field Hex which is the detection object can be concentrated efficiently in the first portion p 1 and the fourth portion p 4 . According to the embodiment, a magnetic sensor can be provided in which the sensitivity can be increased.

For example, a magnetization p 1 M of the first portion p 1 is aligned with the orientation of the magnetization p 2 M of the second portion p 2 and the orientation of the magnetization p 3 M of the third portion p 3 . For example, a magnetization p 4 M of the fourth portion p 4 is aligned with the orientation of the magnetization p 5 M of the fifth portion p 5 and the orientation of the magnetization p 6 M of the sixth portion p 6 .

For example, the magnetization p 5 M of the fifth portion p 5 is aligned with the reverse orientation of the magnetization p 2 M of the second portion p 2 . The magnetization p 6 M of the sixth portion p 6 is aligned with the reverse orientation of the magnetization p 3 M of the third portion p 3 .

For example, the first terminal T 1 is electrically connected to the first magnetic part 10 A. The second terminal T 2 is electrically connected to the first counter magnetic part 10 Ac. The electrical resistance between the first magnetic part 10 A and the first counter magnetic part 10 Ac corresponds to the electrical resistance between the first terminal T 1 and the second terminal T 2 .

For example, the electrical resistance Rx between the first magnetic part 10 A and the first counter magnetic part 10 Ac has an even-function characteristic of the magnetic field (e.g., the magnetic field along the first direction D 1 ) applied to the first element E 1 .

FIG. 15 is a graph illustrating a characteristic of the magnetic sensor according to the second embodiment.

The horizontal axis of FIG. 15 is the intensity of the external magnetic field Hex applied to the first element E 1 . The vertical axis is the electrical resistance Rx between the first magnetic part 10 A and the first magnetic layer 11 L. For example, the electrical resistance Rx corresponds to the electrical resistance between the first terminal T 1 and the second terminal T 2 . FIG. 15 corresponds to the R-H characteristic.

As shown in FIG. 15 , for example, the electrical resistance Rx between the first magnetic part 10 A and the first counter magnetic part 10 Ac has the first value R 1 when the first magnetic field Hex 1 is applied to the first element E 1 , has the second value R 2 when the second magnetic field Hex 2 is applied to the first element E 1 , and has the third value R 3 when the third magnetic field Hex 3 is applied to the first element E 1 . The absolute value of the first magnetic field Hex 1 is less than the absolute value of the second magnetic field Hex 2 and less than the absolute value of the third magnetic field Hex 3 . The orientation of the second magnetic field Hex 2 is the reverse of the orientation of the third magnetic field Hex 3 . The first value R 1 is larger than the second value R 2 and larger than the third value R 3 .

For example, the first element E 1 further includes the first interconnect 51 . The first interconnect 51 includes the portion 51 p extending along the third direction D 3 . For example, at least a portion of the first interconnect 51 overlaps at least a portion of the first portion p 1 in the second direction D 2 . At least a portion of the first interconnect 51 overlaps at least a portion of the fourth portion p 4 in the second direction D 2 .

The magnetic sensor 120 further includes the circuit part 70 . The circuit part 70 includes the current supply circuit 70 a and the detection circuit 70 d . The current supply circuit 70 a is configured to supply an alternating current to the first interconnect 51 . The detection circuit 70 d is configured to detect a value corresponding to the electrical resistance Rx.

The noise can be suppressed by utilizing the electrical resistance Rx having an even-function characteristic of the magnetic field applied to the first element E 1 . In the magnetic sensor 120 , for example, the magnetization of the first intermediate magnetic layer 11 i and the magnetization of the first counter intermediate magnetic layer 11 ic rotate according to the signal magnetic field Hsig. For example, the angle difference between the magnetization of the first intermediate magnetic layer 11 i and the magnetization of the first counter intermediate magnetic layer 11 ic in the magnetic sensor 120 is 2 times the change of the angle of the magnetization in the magnetic sensor 110 . Thereby, the output of the magnetic sensor 120 is 2 times that of the magnetic sensor 110 . For example, the magnetic field detection sensitivity of the magnetic sensor 120 is 2 times.

FIG. 16A to FIG. 16D and FIG. 17A to FIG. 17D are schematic views illustrating portions of the magnetic sensor according to the second embodiment.

FIG. 16A is a plan view. FIG. 16B is an Ay 1 -Ay 2 line cross section of FIG. 16A . FIG. 16C is a By 1 -By 2 line cross section of FIG. 16A . FIG. 17A is a plan view. FIG. 17B is a Cy 1 -Cy 2 line cross section of FIG. 17A . FIG. 17C is a Dy 1 -Dy 2 line cross section of FIG. 17A .

As shown in FIG. 17A and FIG. 17B , the second portion p 2 includes a first partial region pr 1 and a second partial region pr 2 . The direction from the first partial region pr 1 toward the second partial region pr 2 is aligned with the third direction D 3 . For example, the first partial region pr 1 is an end portion of the second portion p 2 in the third direction D 3 . For example, the second partial region pr 2 is another end portion of the second portion p 2 in the third direction D 3 .

As shown in FIG. 16A and FIG. 16B , the fifth portion p 5 includes a third partial region pr 3 and a fourth partial region pr 4 . The direction from the third partial region pr 3 toward the fourth partial region pr 4 is aligned with the third direction D 3 . For example, the third partial region pr 3 is an end portion of the fifth portion p 5 in the third direction D 3 . For example, the fourth partial region pr 4 is another end portion of the fifth portion p 5 in the third direction D 3 .

The first element E 1 further includes a first magnetic member 61 , a second magnetic member 62 , a third magnetic member 63 , and a fourth magnetic member 64 . The first magnetic member 61 , the second magnetic member 62 , the third magnetic member 63 , and the fourth magnetic member 64 include at least one selected from the group consisting of Ir—Mn, Pt—Mn, and Ni—Mn.

The direction from the first partial region pr 1 toward the first magnetic member 61 , the direction from the second partial region pr 2 toward the second magnetic member 62 , the direction from the third partial region pr 3 toward the third magnetic member 63 , and the direction from the fourth partial region pr 4 toward the fourth magnetic member 64 are aligned with the second direction D 2 .

As shown in FIG. 17B , the first element E 1 includes a first film 61 n and a second film 62 n . The first film 61 n is provided between the first partial region pr 1 and the first magnetic member 61 . The second film 62 n is provided between the second partial region pr 2 and the second magnetic member 62 .

As shown in FIG. 16B , the first element E 1 includes a third film 63 n and a fourth film 64 n . The third film 63 n is provided between the third partial region pr 3 and the third magnetic member 63 . The fourth film 64 n is provided between the fourth partial region pr 4 and the fourth magnetic member 64 .

The first film 61 n and the second film 62 n include one of a first material or a second material. The third film 63 n and the fourth film 64 n include the other of the first material or the second material. The first material includes at least one of Ru, Ir, or Rh. The second material includes at least one of Co, Fe, or Ni. The second material is a ferromagnetic material.

For example, when the first film 61 n and the second film 62 n include the first material recited above, the thicknesses of the first film 61 n and the second film 62 n each are, for example, about 0.8 nm (e.g., not less than 0.5 nm and not more than 1.1 nm). In such a case, for example, the first partial region pr 1 and the first magnetic member 61 are magnetically coupled antiferromagnetically with each other. For example, the second partial region pr 2 and the second magnetic member 62 are magnetically coupled antiferromagnetically with each other. For example, a CoFe film is provided at the interface with the first partial region pr 1 ; and a CoFe film is provided at the interface with the first magnetic member 61 . Thereby, the first partial region pr 1 and the first magnetic member 61 are magnetically coupled antiferromagnetically with each other. A CoFe film is provided at the interface with the second partial region pr 2 ; and a CoFe film is provided at the interface with the second magnetic member 62 . Thereby, for example, the second partial region pr 2 and the second magnetic member 62 are magnetically coupled antiferromagnetically with each other.

For example, the first film 61 n and the second film 62 n each include a first CoFe film 69 a , a second CoFe film 69 c , and a Ru film 69 b (a film of the first material) provided between the first CoFe film 69 a and the second CoFe film 69 c (referring to FIG. 17D ).

The first film 61 n and the second film 62 n are, for example, antiferromagnetically-coupled films. The third film 63 n and the fourth film 64 n are, for example, ferromagnetically-coupled films. The materials of the first film 61 n and the second film 62 n are different from the materials of the third film 63 n and the fourth film 64 n.

For example, heat treatment at 250° C. to 300° C. is performed while applying a magnetic field along the third direction D 3 . Thereby, the magnetization of the third partial region pr 3 and the magnetization of the fourth partial region pr 4 are fixed by the first to fourth magnetic members 61 to 64 to the same orientation as the magnetic field of the heat treatment. The magnetization of the first partial region pr 1 and the magnetization of the second partial region pr 2 are fixed to the reverse orientation of the magnetic field of the heat treatment.

As a result, when there is no external magnetic field, magnetizations of reverse orientations are obtained easily in the first magnetic part 10 A and the first counter magnetic part 10 Ac.

As shown in FIG. 17C , for example, the third portion p 3 includes a fifth partial region pr 5 and a sixth partial region pr 6 . The direction from the fifth partial region pr 5 toward the sixth partial region pr 6 is aligned with the third direction D 3 .

As shown in FIG. 16C , for example, the sixth portion p 6 includes a seventh partial region pr 7 and an eighth partial region pr 8 . The direction from the seventh partial region pr 7 toward the eighth partial region pr 8 is aligned with the third direction D 3 .

The first element E 1 further includes a fifth magnetic member 65 , a sixth magnetic member 66 , a seventh magnetic member 67 , and an eighth magnetic member 68 . The fifth magnetic member 65 , the sixth magnetic member 66 , the seventh magnetic member 67 , and the eighth magnetic member 68 include at least one selected from the group consisting of Ir—Mn, Pt—Mn, and Ni—Mn.

As shown in FIG. 17C , the first element E 1 further includes a fifth film 65 n and a sixth film 66 n . The fifth film 65 n is provided between the fifth partial region pr 5 and the fifth magnetic member 65 . The sixth film 66 n is provided between the sixth partial region pr 6 and the sixth magnetic member 66 .

As shown in FIG. 16C , the first element E 1 further includes a seventh film 67 n and an eighth film 68 n . The seventh film 67 n is provided between the seventh partial region pr 7 and the seventh magnetic member 67 . The eighth film 68 n is provided between the eighth partial region pr 8 and the eighth magnetic member 68 .

The fifth film 65 n and the sixth film 66 n include the one of the first material or the second material recited above. The seventh film 67 n and the eighth film 68 n include the other of the first material or the second material recited above. The fifth film 65 n and the sixth film 66 n include the same material as the first film 61 n and the second film 62 n . The seventh film 67 n and the eighth film 68 n include the same material as the third film 63 n and the fourth film 64 n.

For example, when the fifth film 65 n and the sixth film 66 n include the first material recited above, the thicknesses of the fifth film 65 n and the sixth film 66 n each are, for example, about 0.8 nm (e.g., not less than 0.5 nm and not more than 1.1 nm). In such a case, for example, the fifth partial region pr 5 and the fifth magnetic member 65 are magnetically coupled antiferromagnetically with each other. For example, the sixth partial region pr 6 and the sixth magnetic member 66 are magnetically coupled antiferromagnetically with each other.

For example, as shown in FIG. 16D , the fifth film 65 n and the sixth film 66 n each include, for example, a first CoFe film 69 d , a second CoFe film 69 f , and a Ru film 69 e (a film of the first material) provided between the first CoFe film 69 d and the second CoFe film 69 f . In such a case, the seventh film 67 n and the eighth film 68 n each include, for example, CoFe (the second material).

The fifth film 65 n and the sixth film 66 n are, for example, antiferromagnetically-coupled films. The seventh film 67 n and the eighth film 68 n are, for example, ferromagnetically-coupled films. The materials of the fifth film 65 n and the sixth film 66 n are different from the materials of the seventh film 67 n and the eighth film 68 n.

For example, the third film 63 n , the fourth film 64 n , the seventh film 67 n , and the eighth film 68 n each may include, for example, the first CoFe film 69 d , the second CoFe film 69 f , and the Ru film 69 e (a film of the first material) provided between the first CoFe film 69 d and the second CoFe film 69 f . In such a case, the first film 61 n , the second film 62 n , the fifth film 65 n , and the sixth film 66 n each include CoFe.

By such a configuration, a stable magnetization is easier to obtain in the third portion p 3 ; and a stable magnetization is easier to obtain in the sixth portion p 6 . The magnetization p 6 M of the sixth portion p 6 easily is aligned with the reverse orientation of the magnetization p 3 M of the third portion p 3 .

FIG. 18 is a schematic plan view illustrating a magnetic sensor according to the second embodiment.

FIG. 19A , FIG. 19B , FIG. 20 , FIG. 21A , FIG. 21B , FIG. 22 , FIG. 23A , FIG. 23B , and FIG. 24 are schematic views illustrating the magnetic sensor according to the second embodiment.

FIG. 19A is a plan view as viewed along arrow AR of FIG. 19B . FIG. 19B is a Bx 1 -Bx 2 line cross-sectional view of FIG. 19A . FIG. 20 is a plan view illustrating a portion of the magnetic sensor. FIG. 21A is a plan view as viewed along arrow AR of FIG. 21B . FIG. 21B is a Cx 1 -Cx 2 line cross-sectional view of FIG. 21A . FIG. 22 is a plan view illustrating a portion of the magnetic sensor. FIG. 23A is a plan view as viewed along arrow AR of FIG. 23B . FIG. 23B is a Dx 1 -Dx 2 line cross-sectional view of FIG. 23A . FIG. 24 is a plan view illustrating a portion of the magnetic sensor.

As shown in FIG. 18 , the magnetic sensor 121 according to the embodiment includes the second element E 2 , the third element E 3 , and the fourth element E 4 in addition to the first element E 1 . The magnetic sensor 121 further includes the circuit part 70 . As described above, the first element E 1 includes the portion 51 p extending along the third direction D 3 . The configurations of the first element E 1 described in reference to the magnetic sensors 120 and 121 are applicable to the second element E 2 , the third element E 3 , and the fourth element E 4 .

The magnetic sensor 121 includes, for example, the current supply circuit 70 a . The current supply circuit 70 a supplies the first alternating current Ia 1 to the first interconnect 51 . The current supply circuit 70 a supplies the second alternating current Ia 2 to the second interconnect 52 . The current supply circuit 70 a supplies the third alternating current Ia 3 to the third interconnect 53 .

At the same time, the orientation of the first alternating current Ia 1 and the orientation of the second alternating current Ia 2 are reversed. At the same time, the orientation of the first current magnetic field H 1 generated by the first alternating current Ia 1 and applied to the first portion p 1 is the reverse of the orientation of the second current magnetic field H 2 generated by the second alternating current Ia 2 and applied to the fourth portion p 4 .

At the same time, the orientation of the third alternating current Ia 3 and the orientation of the first alternating current Ia 1 are reversed. At the same time, the orientation of the third current magnetic field H 3 generated by the third alternating current Ia 3 and applied to the seventh portion p 7 is the reverse of the orientation of the first current magnetic field H 1 generated by the first alternating current Ia 1 and applied to the first portion p 1 .

At the same time, the orientation of the fourth alternating current Ia 4 and the orientation of the first alternating current Ia 1 are the same. At the same time, the orientation of the fourth current magnetic field H 4 generated by the fourth alternating current Ia 4 and applied to the tenth portion p 10 is the same as the orientation of the first current magnetic field H 1 generated by the first alternating current Ia 1 and applied to the first portion p 1 .

For example, the second element E 2 includes the second magnetic part 10 B, a second counter magnetic part 10 Bc, the second nonmagnetic portion 12 n , the second intermediate magnetic layer 12 i , a second counter intermediate magnetic layer 12 ic , and the second interconnect 52 .

The second magnetic part 10 B includes the seventh portion p 7 , the eighth portion p 8 , and the ninth portion p 9 . The direction from the eighth portion p 8 toward the ninth portion p 9 is aligned with the fourth direction D 4 . The seventh portion p 7 is between the eighth portion p 8 and the ninth portion p 9 in the fourth direction D 4 . The seventh portion p 7 has the thirteenth length L 13 along the fifth direction D 5 crossing the fourth direction D 4 , and the fourteenth length L 14 along the sixth direction D 6 crossing a plane including the fourth direction D 4 and the fifth direction D 5 .

The eighth portion p 8 has at least one of the fifteenth length L 15 along the fifth direction D 5 that is longer than the thirteenth length L 13 , or the sixteenth length L 16 along the sixth direction D 6 that is longer than the fourteenth length L 14 . The ninth portion p 9 has at least one of the seventeenth length L 17 along the fifth direction D 5 that is longer than the thirteenth length L 13 , or the eighteenth length L 18 along the sixth direction D 6 that is longer than the fourteenth length L 14 . For example, the fourth direction D 4 is aligned with the first direction D 1 ; the fifth direction D 5 is aligned with the second direction D 2 ; and the sixth direction D 6 is aligned with the third direction D 3 .

The second counter magnetic part 10 Bc includes the tenth portion p 10 , the eleventh portion p 11 , and the twelfth portion p 12 . The direction from the seventh portion p 7 toward the tenth portion p 10 is aligned with the fifth direction D 5 . The direction from the eighth portion p 8 toward the eleventh portion p 11 is aligned with the fifth direction D 5 . The direction from the ninth portion p 9 toward the twelfth portion p 12 is aligned with the fifth direction D 5 . The tenth portion p 10 is between the eleventh portion p 11 and the twelfth portion p 12 in the fourth direction D 4 .

The tenth portion p 10 has the nineteenth length L 19 along the fifth direction D 5 and the twentieth length L 20 along the sixth direction D 6 . The eleventh portion p 11 has at least one of the twenty-first length L 21 along the fifth direction D 5 that is longer than the nineteenth length L 19 , or the twenty-second length L 22 along the sixth direction D 6 that is longer than the twentieth length L 20 . The twelfth portion p 12 has at least one of the twenty-third length L 23 along the fifth direction D 5 that is longer than the nineteenth length L 19 , or the twenty-fourth length L 24 along the sixth direction D 6 that is longer than the twentieth length L 20 .

The second nonmagnetic portion 12 n is provided between the seventh portion p 7 and the tenth portion p 10 . The second intermediate magnetic layer 12 i is provided between the seventh portion p 7 and the second nonmagnetic portion 12 n . The second counter intermediate magnetic layer 12 ic is provided between the second nonmagnetic portion 12 n and the tenth portion p 10 . The second interconnect 52 includes the portion 52 p extending along the sixth direction D 6 . For example, at least a portion of the second interconnect 52 overlaps at least a portion of the seventh portion p 7 in the fifth direction D 5 . At least a portion of the second interconnect 52 overlaps at least a portion of the tenth portion p 10 in the fifth direction D 5 .

For example, a magnetization p 7 M of the seventh portion p 7 is aligned with the orientation of the magnetization p 8 M of the eighth portion p 8 and the orientation of the magnetization p 9 M of the ninth portion p 9 . For example, a magnetization p 10 M of the tenth portion p 10 is aligned with the orientation of the magnetization p 11 M of the eleventh portion p 11 and the orientation of the magnetization p 12 M of the twelfth portion p 12 .

For example, the magnetization p 11 M of the eleventh portion p 11 is aligned with the reverse orientation of the magnetization p 8 M of the eighth portion p 8 . The magnetization p 12 M of the twelfth portion p 12 is aligned with the reverse orientation of the magnetization p 9 M of the ninth portion p 9 .

The third element E 3 includes the third magnetic part 10 C, a third counter magnetic part 10 Cc, the third nonmagnetic portion 13 n , the third intermediate magnetic layer 13 i , a third counter intermediate magnetic layer 13 ic , and the third interconnect 53 .

The third magnetic part 10 C includes a thirteenth portion p 13 , a fourteenth portion p 14 , and a fifteenth portion p 15 . The direction from the fourteenth portion p 14 toward the fifteenth portion p 15 is aligned with the seventh direction D 7 . The thirteenth portion p 13 is between the fourteenth portion p 14 and the fifteenth portion p 15 in the seventh direction D 7 .

The thirteenth portion p 13 has a twenty-fifth length L 25 along the eighth direction D 8 crossing the seventh direction D 7 , and a twenty-sixth length L 26 along the ninth direction D 9 crossing a plane including the seventh direction D 7 and the eighth direction D 8 .

The fourteenth portion p 14 has at least one of a twenty-seventh length L 27 along the eighth direction D 8 that is longer than the twenty-fifth length L 25 , or a twenty-eighth length L 28 along the ninth direction D 9 that is longer than the twenty-sixth length L 26 . The fifteenth portion p 15 has at least one of a twenty-ninth length L 29 along the eighth direction D 8 that is longer than the twenty-fifth length L 25 , or a thirtieth length L 30 along the ninth direction D 9 that is longer than the twenty-sixth length L 26 . For example, the seventh direction D 7 is aligned with the first direction D 1 ; the eighth direction D 8 is aligned with the second direction D 2 ; and the ninth direction D 9 is aligned with the third direction D 3 .

The third counter magnetic part 10 Cc includes a sixteenth portion p 16 , a seventeenth portion p 17 , and an eighteenth portion p 18 . The direction from the thirteenth portion p 13 toward the sixteenth portion p 16 is aligned with the eighth direction D 8 . The direction from the fourteenth portion p 14 toward the seventeenth portion p 17 is aligned with the eighth direction D 8 . The direction from the fifteenth portion p 15 toward the eighteenth portion p 18 is aligned with the eighth direction D 8 . The sixteenth portion p 16 is between the seventeenth portion p 17 and the eighteenth portion p 18 in the seventh direction D 7 .

The sixteenth portion p 16 has a thirty-first length L 31 along the eighth direction D 8 and a thirty-second length L 32 along the ninth direction D 9 . The seventeenth portion p 17 has at least one of a thirty-third length L 33 along the eighth direction D 8 that is longer than the thirty-first length L 31 , or a thirty-fourth length L 34 along the ninth direction D 9 that is longer than the thirty-second length L 32 . The eighteenth portion p 18 has at least one of a thirty-fifth length L 35 along the eighth direction D 8 that is longer than the thirty-first length L 31 , or a thirty-sixth length L 36 along the ninth direction D 9 that is longer than the thirty-second length L 32 .

The third nonmagnetic portion 13 n is provided between the thirteenth portion p 13 and the sixteenth portion p 16 . The third intermediate magnetic layer 13 i is provided between the thirteenth portion p 13 and the third nonmagnetic portion 13 n . The third counter intermediate magnetic layer 13 ic is provided between the third nonmagnetic portion 13 n and the sixteenth portion p 16 . The third interconnect 53 includes the portion 53 p extending along the ninth direction D 9 . For example, at least a portion of the third interconnect 53 overlaps at least a portion of the thirteenth portion p 13 in the eighth direction D 8 . At least a portion of the third interconnect 53 overlaps at least a portion of the sixteenth portion p 16 in the eighth direction D 8 .

For example, a magnetization p 13 M of the thirteenth portion p 13 is aligned with the orientation of a magnetization p 14 M of the fourteenth portion p 14 and the orientation of a magnetization p 15 M of the fifteenth portion p 15 . For example, a magnetization p 16 M of the sixteenth portion p 16 is aligned with the orientation of a magnetization p 17 M of the seventeenth portion p 17 and the orientation of a magnetization p 18 M of the eighteenth portion p 18 .

For example, the magnetization p 17 M of the seventeenth portion p 17 is aligned with the reverse orientation of the magnetization p 14 M of the fourteenth portion p 14 . The magnetization p 18 M of the eighteenth portion p 18 is aligned with the reverse orientation of the magnetization p 15 M of the fifteenth portion p 15 .

The fourth element E 4 includes the fourth magnetic part 10 D, a fourth counter magnetic part 10 Dc, the fourth nonmagnetic portion 14 n , the fourth intermediate magnetic layer 14 i , a fourth counter intermediate magnetic layer 14 ic , and the fourth interconnect 54 .

The fourth magnetic part 10 D includes a nineteenth portion p 19 , a twentieth portion p 20 , and a twenty-first portion p 21 . The direction from the twentieth portion p 20 toward the twenty-first portion p 21 is aligned with the tenth direction D 10 . The nineteenth portion p 19 is between the twentieth portion p 20 and the twenty-first portion p 21 in the tenth direction D 10 . The nineteenth portion p 19 has a thirty-seventh length L 37 along the eleventh direction D 11 crossing the tenth direction D 10 , and a thirty-eighth length L 38 along the twelfth direction D 12 crossing a plane including the tenth direction D 10 and the eleventh direction D 11 . For example, the tenth direction D 10 is aligned with the first direction D 1 ; the eleventh direction D 11 is aligned with the second direction D 2 ; and the twelfth direction D 12 is aligned with the third direction D 3 .

The twentieth portion p 20 has at least one of a thirty-ninth length L 39 along the eleventh direction D 11 that is longer than the thirty-seventh length L 37 , or a fortieth length L 40 along the twelfth direction D 12 that is longer than the thirty-eighth length L 38 . The twenty-first portion p 21 has at least one of a forty-first length L 41 along the eleventh direction D 11 that is longer than the thirty-seventh length L 37 , or a forty-second length L 42 along the twelfth direction D 12 that is longer than the thirty-eighth length L 38 .

The fourth counter magnetic part 10 Dc includes a twenty-second portion p 22 , a twenty-third portion p 23 , and a twenty-fourth portion p 24 . The direction from the nineteenth portion p 19 toward the twenty-second portion p 22 is aligned with the eleventh direction D 11 . The direction from the twentieth portion p 20 toward the twenty-third portion p 23 is aligned with the eleventh direction D 11 . The direction from the twenty-first portion p 21 toward the twenty-fourth portion p 24 is aligned with the eleventh direction D 11 . The twenty-second portion p 22 is between the twenty-third portion p 23 and the twenty-fourth portion p 24 in the tenth direction D 10 .

The twenty-second portion p 22 has a forty-third length L 43 along the eleventh direction D 11 and a forty-fourth length L 44 along the twelfth direction D 12 . The twenty-third portion p 23 has at least one of a forty-fifth length L 45 along the eleventh direction D 11 that is longer than the forty-third length L 43 , or a forty-sixth length L 46 along the twelfth direction D 12 that is longer than the forty-fourth length L 44 . The twenty-fourth portion p 24 has at least one of a forty-seventh length L 47 along the eleventh direction D 11 that is longer than the forty-third length L 43 , or a forty-eighth length L 48 along the twelfth direction D 12 that is longer than the forty-fourth length L 44 .

The fourth nonmagnetic portion 14 n is provided between the nineteenth portion p 19 and the twenty-second portion p 22 . The fourth intermediate magnetic layer 14 i is provided between the nineteenth portion p 19 and the fourth nonmagnetic portion 14 n . The fourth counter intermediate magnetic layer 14 ic is provided between the fourth nonmagnetic portion 14 n and the twenty-second portion p 22 . The fourth interconnect 54 includes the portion 54 p extending along the twelfth direction D 12 . For example, at least a portion of the fourth interconnect 54 overlaps at least a portion of the nineteenth portion p 19 in the eleventh direction D 11 . At least a portion of the fourth interconnect 54 overlaps at least a portion of the twenty-second portion p 22 in the eleventh direction D 11 .

For example, a magnetization p 19 M of the nineteenth portion p 19 is aligned with the orientation of a magnetization p 20 M of the twentieth portion p 20 and the orientation of a magnetization p 21 M of the twenty-first portion p 21 . For example, a magnetization p 22 M of the twenty-second portion p 22 is aligned with the orientation of a magnetization p 23 M of the twenty-third portion p 23 and the orientation of a magnetization p 24 M of the twenty-fourth portion p 24 .

For example, the magnetization p 23 M of the twenty-third portion p 23 is aligned with the reverse orientation of the magnetization p 20 M of the twentieth portion p 20 . The magnetization p 24 M of the twenty-fourth portion p 24 is aligned with the reverse orientation of the magnetization p 21 M of the twenty-first portion p 21 .

For example, the third terminal T 3 is electrically connected to the second magnetic part 10 B. The fourth terminal T 4 is electrically connected to the second counter magnetic part 10 Bc. The electrical resistance between the second magnetic part 10 B and the second counter magnetic part 10 Bc corresponds to the electrical resistance between the third terminal T 3 and the fourth terminal T 4 .

For example, the fifth terminal T 5 is electrically connected to the third magnetic part 10 C. The sixth terminal T 6 is electrically connected to the third counter magnetic part 10 Cc. The electrical resistance between the third magnetic part 10 C and the third counter magnetic part 10 Cc corresponds to the electrical resistance between the fifth terminal T 5 and the sixth terminal T 6 .

For example, the seventh terminal T 7 is electrically connected to the fourth magnetic part 10 D. The eighth terminal T 8 is electrically connected to the fourth counter magnetic part 10 Dc. The electrical resistance between the fourth magnetic part 10 D and the fourth counter magnetic part 10 Dc corresponds to the electrical resistance between the seventh terminal T 7 and the eighth terminal T 8 .

The bias voltage Vb is applied to the first to fourth elements E 1 to E 4 by the bias voltage application part 70 da . The first element E 1 and the third element E 3 are connected in series by a current path including the second terminal T 2 , the first terminal T 1 , the fifth terminal T 5 , and the sixth terminal T 6 . The second element E 2 and the fourth element E 4 are connected in series by a current path including the fourth terminal T 4 , the third terminal T 3 , the seventh terminal T 7 , and the eighth terminal T 8 . For example, the bias voltage application part 70 da supplies a direct current to the current path of the first element E 1 and the third element E 3 and the current path of the second element E 2 and the fourth element E 4 .

For example, the detector 70 dd detects, as the signal Vsig, the potential difference Vout between an intermediate portion (the first connection point CN 1 ) of the first terminal T 1 and the fifth terminal T 5 and an intermediate portion (the second connection point CN 2 ) of the third terminal T 3 and the seventh terminal T 7 . When the signal magnetic field Hsig is zero, the resistances of the first to fourth elements E 1 to E 4 are the same resistance. At this time, a potential is not generated between the first connection point CN 1 and the second connection point CN 2 . When the signal magnetic field Hsig is applied, the same resistance fluctuation occurs in the first element E 1 and the fourth element E 4 . The same resistance fluctuation occurs in the second element E 2 and the third element E 3 . The resistance fluctuation of the first element E 1 and the fourth element E 4 and the resistance fluctuation of the second element E 2 and the third element E 3 are the reverse of each other. The potential difference Vout is generated thereby.

As shown in FIG. 18 , for example, the circuit part 70 includes the current supply circuit 70 a . The current supply circuit 70 a is configured to supply the first alternating current Ia 1 to the first interconnect 51 . The current supply circuit 70 a is configured to supply the second alternating current Ia 2 to the second interconnect 52 . The current supply circuit 70 a is configured to supply the third alternating current Ia 3 to the third interconnect 53 . The current supply circuit 70 a is configured to supply the fourth alternating current Ia 4 to the fourth interconnect 54 .

The orientation of the first current magnetic field H 1 generated by the first alternating current Ia 1 and applied to the first portion p 1 has a reverse component of the orientation of the second current magnetic field H 2 generated by the second alternating current Ia 2 and applied to the seventh portion p 7 . The orientation of the first current magnetic field H 1 has a reverse component of the orientation of the third current magnetic field H 3 generated by the third alternating current Ia 3 and applied to the thirteenth portion p 13 . The orientation of the fourth current magnetic field H 4 generated by the fourth alternating current Ia 4 and applied to the nineteenth portion p 19 has the reverse component of the orientation of the second current magnetic field H 2 . The orientation of the fourth current magnetic field H 4 has a reverse component of the orientation of the third current magnetic field H 3 . The effects of the noise can be suppressed by using such an alternating current and by using a bridge circuit such as that shown in FIG. 18 .

As shown in FIG. 18 , a bridge circuit is formed of the first to fourth elements E 1 to E 4 . For example, the circuit part 70 includes the detection circuit 70 d . For example, the detection circuit 70 d is electrically connected to the first connection point CN 1 and the second connection point CN 2 . The detection circuit 70 d outputs the signal Vsig corresponding to the potential difference Vout between the first connection point CN 1 and the second connection point CN 2 . At the first connection point CN 1 , the first current path c 1 which includes the first magnetic part 10 A and the first magnetic layer 11 L and the third current path c 3 which includes the third magnetic part 10 C and the third magnetic layer 13 L are electrically connected to each other in series. At the second connection point CN 2 , the second current path c 2 which includes the second magnetic part 10 B and the second magnetic layer 12 L and the fourth current path c 4 which includes the fourth magnetic part 10 D and the fourth magnetic layer 14 L are electrically connected to each other in series.

In the first embodiment and the second embodiment, for example, at least one of the first to fourth nonmagnetic portions 11 n to 14 n includes magnesium and oxygen. For example, at least one of the first to fourth nonmagnetic portions 11 n to 14 n includes MgO. For example, a high MR ratio is obtained; and high sensitivity is obtained.

An example of simulation results of characteristics of the magnetic sensor 121 will now be described.

In the simulation, the sensor has the bridge configuration illustrated in FIG. 8 . One element has the configuration of the eighth model MD 8 illustrated in FIG. 2 . The gain G of the eighth model MD 8 is 103. The values of the alternating currents supplied to the first to fourth interconnects 51 to 54 are set to values corresponding to the external magnetic field Hex at which the maximum slope is obtained in the R-H characteristic illustrated in FIG. 15 . A frequency f of the alternating current is 1 MHz. The magnetoresistance change rate (ΔR/R) is 200% for each of the first to fourth elements E 1 to E 4 . A saturation magnetic field Hs is 0.5 mT for each of the first to fourth magnetic parts 10 A to 10 D. The bias voltage Vb is 0.5 V.

For each of the first to fourth magnetic layers 11 L to 14 L, the length in the X-axis direction is 15 μm; and the length in the Y-axis direction is 20 μm. The major noise generated in the sensor is the 1/f noise; and the other noise is sufficiently small. The Hooge constant α of the 1/f noise is 2×10 −9 m 2 . The 1/f noise Vn and the signal Vsig obtained as the output are obtained by the following formulas.

Vsig= 2× Vb×G ×(Δ R/R )/ Hs

Vn =(α× Vd×Vd/A/f ) 1/2

In the formulas recited above, “A” is the surface area in the X-Y plane of each of the first to fourth stacked bodies SB 1 to SB 4 and is 18×18 μm 2 . As a result of the simulation, a signal Vsig of 0.2 μV/pT is obtained; and the 1/f noise Vn of 0.08 μV/(Hz) 1/2 is obtained. The minimum detected magnetic field at which the SN ratio is 1 is 0.4 pT. Thus, according to the embodiment, it is possible to detect a micro magnetic field of 1 pT or less.

An example of an application of the magnetic sensor according to the embodiment will now be described.

FIG. 25 is a schematic perspective view showing an application example of the magnetic sensor according to the embodiment.

FIG. 26 is a schematic plan view showing the application example of the magnetic sensor according to the embodiment.

As shown in FIG. 25 and FIG. 26 , the magnetic sensor 150 a according to the embodiment may be used with a battery 610 . For example, a battery system 600 includes the battery 610 and the magnetic sensor 150 a . The magnetic sensor 150 a can detect a magnetic field generated by a current flowing in the battery 610 .

For example, as shown in FIG. 26 , the magnetic sensor 150 a includes multiple magnetic sensors according to the embodiment. In the example, the magnetic sensor 150 a includes the multiple magnetic sensors 110 (or 110 A, 110 B, 110 a , 110 b , 111 , 120 , 121 , etc.). For example, the multiple magnetic sensors are arranged in two directions (e.g., the X-axis direction and the Y-axis direction). For example, the multiple magnetic sensors 110 are provided on a substrate 80 s.

The magnetic sensor 150 a can detect the magnetic field generated by the current flowing in the battery 610 . For example, there are cases where an abnormal current flows in the battery 610 when the battery 610 approaches an abnormal state. The change of the state of the battery 610 can be known by the magnetic sensor 150 a detecting the abnormal current. For example, the entire battery 610 can be inspected in a short period of time by using bidirectional sensor group drive means in a state in which the magnetic sensor 150 a is placed proximally to the battery 610 . The magnetic sensor 150 a may be used to inspect the battery 610 in the manufacturing of the battery 610 .

For example, the magnetic sensor according to the embodiment is applicable to a diagnostic device, etc. An example of a diagnostic device using the magnetic sensor according to the embodiment will now be described.

Third Embodiment

FIG. 27 is a schematic view showing a magnetic sensor and a diagnostic device according to a third embodiment.

As shown in FIG. 27 , the diagnostic device 500 includes the magnetic sensor 150 . The magnetic sensor 150 includes the magnetic sensors (and the magnetic sensor devices) described in reference to the first embodiment and the second embodiment and modifications of the magnetic sensors (and the magnetic sensor devices).

In the diagnostic device 500 , the magnetic sensor 150 is, for example, a magnetoencephalograph device. The magnetoencephalograph device detects a magnetic field generated by cranial nerves. In the case where the magnetic sensor 150 is included in a magnetoencephalograph device, the size of the magnetic element included in the magnetic sensor 150 is, for example, not less than 1 mm but less than 10 mm. The size is, for example, the length including the MFC.

As shown in FIG. 27 , the magnetic sensor 150 (the magnetoencephalograph device) is mounted to, for example, the head of a human body. The magnetic sensor 150 (the magnetoencephalograph device) includes a sensor part 301 (a first sensor part SU 1 or the like). The magnetic sensor 150 (the magnetoencephalograph device) may include multiple sensor parts 301 (the first sensor part SU 1 , a second sensor part SU 2 , etc.). The number of the multiple sensor parts 301 is, for example, about 100 (e.g., not less than 50 and not more than 150). The multiple sensor parts 301 are provided in a base body 302 that is pliable.

The magnetic sensor 150 may include, for example, a circuit for differential detection, etc. The magnetic sensor 150 may include a sensor other than a magnetic sensor (e.g., a potential terminal, an acceleration sensor, etc.).

The size of the magnetic sensor 150 (the magnetic sensors described in reference to the first embodiment and the second embodiment) is small compared to the size of a conventional SQUID magnetic sensor. Therefore, the mounting of the multiple sensor parts 301 is easy. The mounting of the multiple sensor parts 301 and the other circuits is easy. It is easy for the multiple sensor parts 301 to coexist with the other sensors.

The base body 302 may include, for example, an elastic body such as a silicone resin, etc. For example, the multiple sensor parts 301 are linked to each other and provided in the base body 302 . For example, the base body 302 can be closely adhered to the head.

An input/output cord 303 of the sensor part 301 is connected to a sensor driver 506 and a signal input/output part 504 of the diagnostic device 500 . Magnetic field measurement is performed in the sensor part 301 based on the electrical power from the sensor driver 506 and the control signal from the signal input/output part 504 . The result is input to the signal input/output part 504 . The signal that is obtained by the signal input/output part 504 is supplied to a signal processor 508 . Processing such as, for example, the removal of noise, filtering, amplification, signal calculation, etc., are performed in the signal processor 508 . The signal that is processed by the signal processor 508 is supplied to a signal analyzer 510 . For example, the signal analyzer 510 extracts a designated signal for magnetoencephalography. For example, signal analysis to match the signal phases is performed in the signal analyzer 510 .

The output of the signal analyzer 510 (the data for which the signal analysis has ended) is supplied to a data processor 512 . Data analysis is performed in the data processor 512 . It is possible to include image data such as, for example, MRI (Magnetic Resonance Imaging), etc., in the data analysis. It is possible to include, for example, scalp potential information such as an EEG (Electroencephalogram), etc., in the data analysis. For example, nerve firing point analysis, inverse analysis, or the like is performed by the data analysis.

For example, the result of the data analysis is supplied to an imaging diagnostic part 516 . Imaging is performed by the imaging diagnostic part 516 . The diagnosis is supported by the imaging.

For example, the series of operations recited above is controlled by a control mechanism 502 . For example, necessary data such as preliminary signal data, metadata partway through the data processing, or the like is stored in a data server. The data server and the control mechanism may be integrated.

The diagnostic device 500 according to the embodiment includes the magnetic sensor 150 , and a processor that processes the output signal obtained from the magnetic sensor 150 . The processor includes, for example, at least one of the signal processor 508 or the data processor 512 . The processor includes, for example, a computer, etc.

In the magnetic sensor 150 shown in FIG. 27 , the sensor part 301 is mounted to the head of a human body. The sensor part 301 may be mounted to the chest of the human body. Magnetocardiography is possible thereby. For example, the sensor part 301 may be mounted to the abdomen of a pregnant woman. Palmoscopy of the fetus can be performed thereby.

It is favorable for the magnetic sensor device including the participant to be mounted inside a shielded room. For example, the effects of geomagnetism or magnetic noise can be suppressed thereby.

For example, a mechanism may be provided to locally shield the sensor part 301 or the measurement section of the human body. For example, a shield mechanism may be provided in the sensor part 301 . For example, the signal analysis or the data processing may be effectively shielded.

In the embodiment, the base body 302 may be pliable or substantially may not be pliable. In the example shown in FIG. 27 , the base body 302 is a continuous film that is patterned into a hat-like configuration. The base body 302 may have a net configuration. For example, good wearability is obtained thereby. For example, the adhesion of the base body 302 with the human body improves. The base body 302 may have a hard helmet-like configuration.

FIG. 28 is a schematic view showing the magnetic sensor according to the third embodiment.

FIG. 28 is an example of a magnetic detection instrument. In the example shown in FIG. 28 , the sensor part 301 is provided on a hard base body 305 having a flat plate configuration.

The input and output of the signal obtained from the sensor part 301 in the example shown in FIG. 28 is similar to the input and output described in reference to FIG. 27 . The processing of the signal obtained from the sensor part 301 in the example shown in FIG. 28 is similar to the processing described in reference to FIG. 27 .

There is a reference example in which a SQUID (Superconducting Quantum Interference Device) magnetic sensor is used as a device to measure a faint magnetic field such as a magnetic field generated from a living body, etc. Because superconductivity is used in the reference example, the device is large; and the power consumption is large. The burden on the measurement object (the patient) is large.

According to the embodiment, the device can be small. The power consumption can be suppressed. The burden on the measurement object (the patient) can be reduced. According to the embodiment, the SN ratio of the magnetic field detection can be improved. The sensitivity can be increased.

The embodiments may include the following configurations (e.g., technological proposals).

Configuration 1

A magnetic sensor, comprising a first element,

the first element including:

a first magnetic part including a first portion, a second portion, and a third portion, a direction from the second portion toward the third portion being aligned with a first direction, the first portion being between the second portion and the third portion in the first direction, the first portion having a first length and a second length, the first length being along a second direction crossing the first direction, the second length being along a third direction crossing a plane including the first direction and the second direction, the second portion having at least one of a third length along the second direction or a fourth length along the third direction, the third length being longer than the first length, the fourth length being longer than the second length, the third portion having at least one of a fifth length along the second direction or a sixth length along the third direction, the fifth length being longer than the first length, the sixth length being longer than the second length; a first magnetic layer, a direction from the first portion toward the first magnetic layer being aligned with the second direction; a first nonmagnetic portion provided between the first portion and the first magnetic layer; a first intermediate magnetic layer provided between the first portion and the first nonmagnetic portion; and a first interconnect including a portion extending along the third direction and overlapping at least a portion of the first portion in the second direction.

Configuration 2

The magnetic sensor according to Configuration 1, wherein a magnetization of the first magnetic layer is aligned with the third direction.

Configuration 3

The magnetic sensor according to Configuration 1 or 2, wherein an electrical resistance between the first magnetic part and the first magnetic layer has an even-function characteristic of a magnetic field applied to the first element.

Configuration 4

The magnetic sensor according to Configuration 1 or 2, wherein

an electrical resistance between the first magnetic part and the first magnetic layer has a first value when a first magnetic field is applied to the first element, has a second value when a second magnetic field is applied to the first element, and has a third value when a third magnetic field is applied to the first element,

an absolute value of the first magnetic field is less than an absolute value of the second magnetic field and less than an absolute value of the third magnetic field,

an orientation of the second magnetic field is the reverse of an orientation of the third magnetic field, and

the first value is less than the second value and less than the third value.

Configuration 5

The magnetic sensor according to Configuration 3 or 4, further comprising a circuit part,

the circuit part including:

a current supply circuit configured to supply an alternating current to the first interconnect; and a detection circuit configured to detect a value corresponding to the electrical resistance.

Configuration 6

The magnetic sensor according to any one of Configurations 1 to 5, wherein a portion of the first intermediate magnetic layer overlaps the second portion and the third portion in the second direction.

Configuration 7

The magnetic sensor according to any one of Configurations 1 to 6, wherein

the first element further includes a first magnetic member,

the first magnetic member includes at least one selected from the group consisting of Ir—Mn, Pt—Mn, and Ni—Mn, and the first magnetic layer is between the first nonmagnetic portion and the first magnetic member in the second direction.

Configuration 8

The magnetic sensor according to any one of Configurations 1 to 4, further comprising a second element, a third element, and a fourth element,

the first element further including the first interconnect including a portion extending along the third direction,

the second element including a second magnetic part, a second magnetic layer, a second nonmagnetic portion, a second intermediate magnetic layer, and a second interconnect,

the second magnetic part including a fourth portion, a fifth portion, and a sixth portion, a direction from the fifth portion toward the sixth portion being aligned with a fourth direction, the fourth portion being between the fifth portion and the sixth portion in the fourth direction, the fourth portion having a seventh length and an eighth length, the seventh length being along a fifth direction crossing the fourth direction, the eighth length being along a sixth direction crossing a plane including the fourth direction and the fifth direction, the fifth portion having at least one of a ninth length along the fifth direction or a tenth length along the sixth direction, the ninth length being longer than the seventh length, the tenth length being longer than the eighth length, the sixth portion having at least one of an eleventh length along the fifth direction or a twelfth length along the sixth direction, the eleventh length being longer than the seventh length, the twelfth length being longer than the eighth length,

a direction from the fourth portion toward the second magnetic layer being aligned with the fifth direction,

the second nonmagnetic portion being provided between the fourth portion and the second magnetic layer,

the second intermediate magnetic layer being provided between the fourth portion and the second nonmagnetic portion,

the second interconnect including a portion extending along the sixth direction,

the third element including a third magnetic part, a third magnetic layer, a third nonmagnetic portion, a third intermediate magnetic layer, and a third interconnect,

the third magnetic part including a seventh portion, an eighth portion, and a ninth portion, a direction from the eighth portion toward the ninth portion being aligned with a seventh direction, the seventh portion being between the eighth portion and the ninth portion in the seventh direction, the seventh portion having a thirteenth length and a fourteenth length, the thirteenth length being along an eighth direction crossing the seventh direction, the fourteenth length being along a ninth direction crossing a plane including the seventh direction and the eighth direction, the eighth portion having at least one of a fifteenth length along the eighth direction or a sixteenth length along the ninth direction, the fifteenth length being longer than the thirteenth length, the sixteenth length being longer than the fourteenth length, the ninth portion having at least one of a seventeenth length along the eighth direction or an eighteenth length along the ninth direction, the seventeenth length being longer than the thirteenth length, the eighteenth length being longer than the fourteenth length,

a direction from the seventh portion toward the third magnetic layer being aligned with the eighth direction,

the third nonmagnetic portion being provided between the seventh portion and the third magnetic layer,

the third intermediate magnetic layer being provided between the seventh portion and the third nonmagnetic portion,

the third interconnect including a portion extending along the ninth direction,

the fourth element including a fourth magnetic part, a fourth magnetic layer, a fourth nonmagnetic portion, a fourth intermediate magnetic layer, and a fourth interconnect,

the fourth magnetic part including a tenth portion, an eleventh portion, and a twelfth portion, a direction from the eleventh portion toward the twelfth portion being aligned with a tenth direction, the tenth portion being between the eleventh portion and the twelfth portion in the tenth direction,

the tenth portion having a nineteenth length and a twentieth length, the nineteenth length being along an eleventh direction crossing the tenth direction, the twentieth length being along a twelfth direction crossing a plane including the seventh direction and the eighth direction,

the eleventh portion having at least one of a twenty-first length along the eleventh direction or a twenty-second length along the twelfth direction, the twenty-first length being longer than the nineteenth length, the twenty-second length being longer than the twentieth length,

the twelfth portion having at least one of a twenty-third length along the eleventh direction or a twenty-fourth length along the twelfth direction, the twenty-third length being longer than the nineteenth length, the twenty-fourth length being longer than the twentieth length,

a direction from the tenth portion toward the fourth magnetic layer being aligned with the eleventh direction,

the fourth nonmagnetic portion being provided between the tenth portion and the fourth magnetic layer,

the fourth intermediate magnetic layer being provided between the tenth portion and the fourth nonmagnetic portion,

the fourth interconnect including a portion extending along the twelfth direction.

Configuration 9

The magnetic sensor according to Configuration 8, further comprising a circuit part,

the circuit part including a current supply circuit,

the current supply circuit being configured to supply a first alternating current to the first interconnect, configured to supply a second alternating current to the second interconnect, configured to supply a third alternating current to the third interconnect, and configured to supply a fourth alternating current to the fourth interconnect,

an orientation of a first current magnetic field having a reverse component of an orientation of a second current magnetic field and having a reverse component of an orientation of a third current magnetic field, the first current magnetic field being generated by the first alternating current and applied to the first portion, the second current magnetic field being generated by the second alternating current and applied to the fourth portion, the third current magnetic field being generated by the third alternating current and applied to the seventh portion,

an orientation of a fourth current magnetic field having the reverse component of the orientation of the second current magnetic field and having the reverse component of the orientation of the third current magnetic field, the fourth current magnetic field being generated by the fourth alternating current and applied to the tenth portion.

Configuration 10

The magnetic sensor according to Configuration 9, wherein

the circuit part further includes a detection circuit,

the detection circuit being configured to output a signal corresponding to a potential difference between a first connection point and a second connection point,

a first current path and a third current path are electrically connected to each other in series at the first connection point, the first current path including the first magnetic part and the first magnetic layer, the third current path including the third magnetic part and the third magnetic layer, and

a second current path and a fourth current path are electrically connected to each other in series at the second connection point, the second current path including the second magnetic part and the second magnetic layer, the fourth current path including the fourth magnetic part and the fourth magnetic layer.

Configuration 11

A magnetic sensor, comprising a first element,

the first element including:

a first magnetic part including a first portion, a second portion, and a third portion, a direction from the second portion toward the third portion being aligned with a first direction, the first portion being between the second portion and the third portion in the first direction, the first portion having a first length and a second length, the first length being along a second direction crossing the first direction, the second length being along a third direction crossing a plane including the first direction and the second direction, the second portion having at least one of a third length along the second direction or a fourth length along the third direction, the third length being longer than the first length, the fourth length being longer than the second length, the third portion having at least one of a fifth length along the second direction or a sixth length along the third direction, the fifth length being longer than the first length, the sixth length being longer than the second length, a first counter magnetic part including a fourth portion, a fifth portion, and a sixth portion, a direction from the first portion toward the fourth portion being aligned with the second direction, a direction from the second portion toward the fifth portion being aligned with the second direction, a direction from the third portion toward the sixth portion being aligned with the second direction, the fourth portion being between the fifth portion and the sixth portion in the first direction, the fourth portion having a seventh length along the second direction and an eighth length along the third direction, the fifth portion having at least one of a ninth length along the second direction or a tenth length along the third direction, the ninth length being longer than the seventh length, the tenth length being longer than the eighth length, the sixth portion having at least one of an eleventh length along the second direction or a twelfth length along the third direction, the eleventh length being longer than the seventh length, the twelfth length being longer than the eighth length, a first nonmagnetic portion provided between the first portion and the fourth portion, a first intermediate magnetic layer provided between the first portion and the first nonmagnetic portion; a first counter intermediate magnetic layer provided between the first nonmagnetic portion and the fourth portion; and a first interconnect including a portion extending along the third direction and overlapping the first portion in the second direction.

Configuration 12

The magnetic sensor according to Configuration 11, wherein

a magnetization of the fifth portion is aligned with a reverse orientation of a magnetization of the second portion, and

a magnetization of the sixth portion is aligned with a reverse orientation of a magnetization of the third portion.

Configuration 13

The magnetic sensor according to Configuration 11 or 12, wherein an electrical resistance between the first magnetic part and the first counter magnetic part has an even-function characteristic of a magnetic field applied to the first element.

Configuration 14

The magnetic sensor according to Configuration 11 or 12, wherein

an electrical resistance between the first magnetic part and the first counter magnetic part has a first value when a first magnetic field is applied to the first element, has a second value when a second magnetic field is applied to the first element, and has a third value when a third magnetic field is applied to the first element,

an absolute value of the first magnetic field is less than an absolute value of the second magnetic field and less than an absolute value of the third magnetic field,

an orientation of the second magnetic field is the reverse of an orientation of the third magnetic field, and

the first value is greater than the second value and greater than the third value.

Configuration 15

The magnetic sensor according to Configuration 13 or 14, further comprising a circuit part,

the circuit part including:

a current supply circuit configured to supply an alternating current to the first interconnect; and a detection circuit configured to detect a value corresponding to the electrical resistance.

Configuration 16

The magnetic sensor according to any one of Configurations 11 to 15, wherein

the first element further includes a first film, a second film, a third film, and a fourth film,

the first film and the second film include one of a first material or a second material,

the third film and the fourth film include the other of the first material or the second material,

the first material includes at least one of Ru, Ir, or Rh,

the second material includes at least one of Co, Fe, or Ni,

the second portion includes a first partial region and a second partial region, a direction from the first partial region toward the second partial region being aligned with the third direction,

the fifth portion includes a third partial region and a fourth partial region, a direction from the third partial region toward the fourth partial region being aligned with the third direction,

the first element further includes a first magnetic member, a second magnetic member, a third magnetic member, and a fourth magnetic member,

the first magnetic member, the second magnetic member, the third magnetic member, and the fourth magnetic member include at least one selected from the group consisting of Ir—Mn, Pt—Mn, and Ni—Mn,

the first film is provided between the first partial region and the first magnetic member,

the second film is provided between the second partial region and the second magnetic member,

the third film is provided between the third partial region and the third magnetic member, and

the fourth film is provided between the fourth partial region and the fourth magnetic member.

Configuration 17

The magnetic sensor according to Configuration 16, wherein

the first element further includes a fifth film, a sixth film, a seventh film, and an eighth film,

the fifth film and the sixth film include the one of the first material or the second material,

the seventh film and the eighth film include the other of the first material or the second material,

the third portion includes a fifth partial region and a sixth partial region, a direction from the fifth partial region toward the sixth partial region being aligned with the third direction,

the sixth portion includes a seventh partial region and an eighth partial region, a direction from the seventh partial region toward the eighth partial region being aligned with the third direction,

the first element further includes a fifth magnetic member, a sixth magnetic member, a seventh magnetic member, and an eighth magnetic member,

the fifth magnetic member, the sixth magnetic member, the seventh magnetic member, and the eighth magnetic member include at least one selected from the group consisting of Ir—Mn, Pt—Mn, and Ni—Mn,

the fifth film is provided between the fifth partial region and the fifth magnetic member,

the sixth film is provided between the sixth partial region and the sixth magnetic member,

the seventh film is provided between the seventh partial region and the seventh magnetic member, and

the eighth film is provided between the eighth partial region and the eighth magnetic member.

Configuration 18

The magnetic sensor according to any one of Configurations 11 to 14, further comprising a circuit part, a second element, a third element, and a fourth element,

the second element including a second magnetic part, a second counter magnetic part, a second nonmagnetic portion, a second intermediate magnetic layer, a second counter intermediate magnetic layer, and a second interconnect,

the second magnetic part including a seventh portion, an eighth portion, and a ninth portion, a direction from the eighth portion toward the ninth portion being aligned with a fourth direction, the seventh portion being between the eighth portion and the ninth portion in the fourth direction, the seventh portion having a thirteenth length and a fourteenth length, the thirteenth length being along a fifth direction crossing the fourth direction, the fourteenth length being along a sixth direction crossing a plane including the fourth direction and the fifth direction, the eighth portion having at least one of a fifteenth length along the fifth direction or a sixteenth length along the sixth direction, the fifteenth length being longer than the thirteenth length, the sixteenth length being longer than the fourteenth length, the ninth portion having at least one of a seventeenth length along the fifth direction or an eighteenth length along the sixth direction, the seventeenth length being longer than the thirteenth length, the eighteenth length being longer than the fourteenth length,

the second counter magnetic part including a tenth portion, an eleventh portion, and a twelfth portion, a direction from the seventh portion toward the tenth portion being aligned with the fifth direction, a direction from the eighth portion toward the eleventh portion being aligned with the fifth direction, a direction from the ninth portion toward the twelfth portion being aligned with the fifth direction, the tenth portion being between the eleventh portion and the twelfth portion in the fourth direction, the tenth portion having a nineteenth length along the fifth direction and a twentieth length along the sixth direction, the eleventh portion having at least one of a twenty-first length along the fifth direction or a twenty-second length along the sixth direction, the twenty-first length being longer than the nineteenth length, the twenty-second length being longer than the twentieth length, the twelfth portion having at least one of a twenty-third length along the fifth direction or a twenty-fourth length along the sixth direction, the twenty-third length being longer than the nineteenth length, the twenty-fourth length being longer than the twentieth length,

the second nonmagnetic portion being provided between the seventh portion and the tenth portion,

the second intermediate magnetic layer being provided between the seventh portion and the second nonmagnetic portion,

the second counter intermediate magnetic layer being provided between the second nonmagnetic portion and the tenth portion,

the second interconnect including a portion extending along the sixth direction,

the third element including a third magnetic part, a third counter magnetic part, a third nonmagnetic portion, a third intermediate magnetic layer, a third counter intermediate magnetic layer, and a third interconnect,

the third magnetic part including a thirteenth portion, a fourteenth portion, and a fifteenth portion, a direction from the fourteenth portion toward the fifteenth portion being aligned with a seventh direction, the thirteenth portion being between the fourteenth portion and the fifteenth portion in the seventh direction, the thirteenth portion having a twenty-fifth length and a twenty-sixth length, the twenty-fifth length being along an eighth direction crossing the seventh direction, the twenty-sixth length being along a ninth direction crossing a plane including the seventh direction and the eighth direction, the fourteenth portion having at least one of a twenty-seventh length along the eighth direction or a twenty-eighth length along the ninth direction, the twenty-seventh length being longer than the twenty-fifth length, the twenty-eighth length being longer than the twenty-sixth length, the fifteenth portion having at least one of a twenty-ninth length along the eighth direction or a thirtieth length along the ninth direction, the twenty-ninth length being longer than the twenty-fifth length, the thirtieth length being longer than the twenty-sixth length,

the third counter magnetic part including a sixteenth portion, a seventeenth portion, and an eighteenth portion, a direction from the thirteenth portion toward the sixteenth portion being aligned with the eighth direction, a direction from the fourteenth portion toward the seventeenth portion being aligned with the eighth direction, a direction from the fifteenth portion toward the eighteenth portion being aligned with the eighth direction, the sixteenth portion being between the seventeenth portion and the eighteenth portion in the seventh direction, the sixteenth portion having a thirty-first length along the eighth direction and a thirty-second length along the ninth direction, the seventeenth portion having at least one of a thirty-third length along the eighth direction or a thirty-fourth length along the ninth direction, the thirty-third length being longer than the thirty-first length, the thirty-fourth length being longer than the thirty-second length, the eighteenth portion having at least one of a thirty-fifth length along the eighth direction or a thirty-sixth length along the ninth direction, the thirty-fifth length being longer than the thirty-first length, the thirty-sixth length being longer than the thirty-second length,

the third nonmagnetic portion being provided between the thirteenth portion and the sixteenth portion,

the third intermediate magnetic layer being provided between the thirteenth portion and the third nonmagnetic portion,

the third counter intermediate magnetic layer being provided between the third nonmagnetic portion and the sixteenth portion,

the third interconnect including a portion extending along the ninth direction,

the fourth element including a fourth magnetic part, a fourth counter magnetic part, a fourth nonmagnetic portion, a fourth intermediate magnetic layer, a fourth counter intermediate magnetic layer, and a fourth interconnect,

the fourth magnetic part including a nineteenth portion, a twentieth portion, and a twenty-first portion, a direction from the twentieth portion toward the twenty-first portion being aligned with a tenth direction, the nineteenth portion being between the twentieth portion and the twenty-first portion in the tenth direction, the nineteenth portion having a thirty-seventh length and a thirty-eighth length, the thirty-seventh length being along an eleventh direction crossing the tenth direction, the thirty-eighth length being along a twelfth direction crossing a plane including the tenth direction and the eleventh direction, the twentieth portion having at least one of a thirty-ninth length along the eleventh direction or a fortieth length along the twelfth direction, the thirty-ninth length being longer than the thirty-seventh length, the fortieth length being longer than the thirty-eighth length, the twenty-first portion having at least one of a forty-first length along the eleventh direction or a forty-second length along the twelfth direction, the forty-first length being longer than the thirty-seventh length, the forty-second length being longer than the thirty-eighth length,

the fourth counter magnetic part including a twenty-second portion, a twenty-third portion, and a twenty-fourth portion, a direction from the twenty-third portion toward the twenty-fourth portion being aligned with the eleventh direction, a direction from the twentieth portion toward the twenty-third portion being aligned with the eleventh direction, a direction from the twenty-first portion toward the twenty-fourth portion being aligned with the eleventh direction, the twenty-second portion being between the twenty-third portion and the twenty-fourth portion in the tenth direction, the twenty-second portion having a forty-third length along the eleventh direction and a forty-fourth length along the twelfth direction, the twenty-third portion having at least one of a forty-fifth length along the eleventh direction or a forty-sixth length along the twelfth direction, the forty-fifth length being longer than the forty-third length, the forty-sixth length being longer than the forty-fourth length, the twenty-fourth portion having at least one of a forty-seventh length along the eleventh direction or a forty-eighth length along the twelfth direction, the forty-seventh length being longer than the forty-third length, the forty-eighth length being longer than the forty-fourth length,

the fourth nonmagnetic portion being provided between the nineteenth portion and the twenty-second portion,

the fourth intermediate magnetic layer being provided between the nineteenth portion and the fourth nonmagnetic portion,

the fourth counter intermediate magnetic layer being provided between the fourth nonmagnetic portion and the twenty-second portion,

the fourth interconnect including a portion extending along the twelfth direction,

the circuit part including a current supply circuit,

the current supply circuit being configured to supply a first alternating current to the first interconnect, configured to supply a second alternating current to the second interconnect, configured to supply a third alternating current to the third interconnect, and configured to supply a fourth alternating current to the fourth interconnect,

an orientation of a first current magnetic field having a reverse component of an orientation of a second current magnetic field and having a reverse component of an orientation of a third current magnetic field, the first current magnetic field being generated by the first alternating current and applied to the first portion, the second current magnetic field being generated by the second alternating current and applied to the seventh portion, the third current magnetic field being generated by the third alternating current and applied to the thirteenth portion,

an orientation of a fourth current magnetic field having the reverse component of the orientation of the second current magnetic field and having the reverse component of the orientation of the third current magnetic field, the fourth current magnetic field being generated by the fourth alternating current and applied to the nineteenth portion.

Configuration 19

The magnetic sensor according to Configuration 18, wherein

the circuit part further includes a detection circuit,

the detection circuit configured to output a signal corresponding to a potential difference between a first connection point and a second connection point,

a first current path and a third current path are electrically connected to each other in series at the first connection point, the first current path including the first magnetic part and the first magnetic layer, the third current path including the third magnetic part and the third magnetic layer, and

a second current path and a fourth current path are electrically connected to each other in series at the second connection point, the second current path including the second magnetic part and the second magnetic layer, the fourth current path including the fourth magnetic part and the fourth magnetic layer.

Configuration 20

The magnetic sensor according to any one of Configurations 1 to 19, wherein the first nonmagnetic portion includes magnesium and oxygen.

Configuration 21

A diagnostic device, comprising:

the magnetic sensor according to any one of Configurations 1 to 20; and

a processor processing an output signal obtained from the magnetic sensor.

Fourth Embodiment

FIG. 29A to FIG. 29D are schematic views illustrating a magnetic sensor according to a fourth embodiment.

FIG. 29A is a plan view as viewed along arrow AR of FIG. 29C and FIG. 29D . FIG. 29B is a line B 1 -B 2 cross-sectional view of FIG. 29A . FIG. 29C is a line A 1 -A 2 cross-sectional view of FIG. 29A . FIG. 29D is a line A 3 -A 4 cross-sectional view of FIG. 29A .

As shown in FIG. 29A to FIG. 29D , the magnetic sensor 130 according to the embodiment includes a first structure body 81 . The first structure body 81 includes the first magnetic part 10 A, the second magnetic part 10 B, a first conductive member 21 , the first magnetic layer 11 L, the second magnetic layer 12 L, the first nonmagnetic portion 11 n , and the second nonmagnetic portion 12 n.

The first magnetic part 10 A includes the first portion p 1 , the second portion p 2 , and the third portion p 3 . The direction from the second portion p 2 toward the third portion p 3 is aligned with the first direction D 1 . The first portion p 1 is between the second portion p 2 and the third portion p 3 in the first direction D 1 . The first direction D 1 is, for example, the X-axis direction.

The first portion p 1 has the first length L 1 along the second direction D 2 crossing the first direction D 1 , and the second length L 2 along the third direction D 3 crossing a plane including the first direction D 1 and the second direction D 2 . The second direction D 2 is, for example, the Z-axis direction. The third direction D 3 is, for example, the Y-axis direction.

The second portion p 2 includes at least one of the third length L 3 along the second direction D 2 that is longer than the first length L 1 , or the fourth length L 4 along the third direction D 3 that is longer than the second length L 2 . In the example, the third length L 3 is longer than the first length L 1 .

The third portion p 3 has at least one of the fifth length L 5 along the second direction D 2 that is longer than the first length L 1 , or the sixth length L 6 along the third direction D 3 that is longer than the second length L 2 . In the example, the fifth length L 5 is longer than the first length L 1 .

The second magnetic part 10 B includes the fourth portion p 4 , the fifth portion p 5 , and the sixth portion p 6 . The direction from the fifth portion p 5 toward the sixth portion p 6 is aligned with the first direction D 1 . The fourth portion p 4 is between the fifth portion p 5 and the sixth portion p 6 in the first direction D 1 .

The fourth portion p 4 has the seventh length L 7 along the second direction D 2 and the eighth length L 8 along the third direction D 3 . The fifth portion p 5 has at least one of the ninth length L 9 along the second direction D 2 that is longer than the seventh length L 7 , or the tenth length L 10 along the third direction D 3 that is longer than the eighth length L 8 . The sixth portion p 6 has at least one of the eleventh length L 11 along the second direction D 2 that is longer than the seventh length L 7 , or the twelfth length L 12 along the third direction D 3 that is longer than the eighth length L 8 .

For example, the first conductive member 21 opposes the first portion p 1 of the first magnetic part 10 A and the fourth portion p 4 of the second magnetic part 10 B in the Z-axis direction.

For example, the direction from a portion of the first portion p 1 toward a portion 21 p of the first conductive member 21 is aligned with the second direction D 2 . The direction from a portion of the fourth portion p 4 toward another portion 21 q of the first conductive member 21 is aligned with the second direction D 2 .

The first magnetic layer 11 L is provided between the portion of the first portion p 1 recited above and the portion 21 p of the first conductive member 21 . The second magnetic layer 12 L is provided between the portion of the fourth portion p 4 recited above and the other portion 21 q of the first conductive member 21 .

The first nonmagnetic portion 11 n is provided between the portion of the first portion p 1 recited above and the first magnetic layer 11 L. The second nonmagnetic portion 12 n is provided between the portion of the fourth portion p 4 recited above and the second magnetic layer 12 L.

For example, the first magnetic part 10 A and the second magnetic part 10 B function as MFCs. For example, the first portion p 1 and the fourth portion p 4 function as free magnetic layers. The first magnetic layer 11 L and the second magnetic layer 12 L function as reference layers. For example, the first magnetic layer 11 L and the second magnetic layer 12 L are fixed magnetic layers.

The portion of the first portion p 1 recited above, the first magnetic layer 11 L, and the first nonmagnetic portion 11 n are included in one element. The portion of the fourth portion p 4 recited above, the second magnetic layer 12 L, and the second nonmagnetic portion 12 n are included in another one element. The electrical resistances of these elements can change according to an external magnetic field. These elements are connected in series by the first conductive member 21 . The effects of the noise can be suppressed. A magnetic sensor can be provided in which the sensitivity can be increased further. By providing multiple elements (e.g., TMR elements) in the magnetic sensor 130 , the element surface area (e.g., the TMR junction surface area) is large. High sensitivity is obtained easily thereby.

As shown in FIG. 29A to FIG. 29D , the magnetic sensor 130 according to the embodiment may further include the first interconnect 51 . At least a portion of the first interconnect 51 is along the third direction D 3 . For example, the first interconnect 51 includes the portion 51 p extending along the third direction D 3 . In the example, at least a portion (the portion 51 p ) of the first interconnect 51 overlaps at least a portion of the first portion p 1 and at least a portion of the fourth portion p 4 in the second direction D 2 . For example, higher sensitivity is obtained by providing such a first interconnect 51 and by applying the configuration described in reference to FIG. 3 and FIG. 4A to FIG. 4C . The magnetic field (the current magnetic field) generated by the current flowing through the first interconnect 51 is applied to the first magnetic layer 11 L. For example, the position in the Z-axis direction of the portion 51 p is different from the position in the Z-axis direction of the first conductive member 21 . The position in the Z-axis direction of the portion 51 p is different from the position in the Z-axis direction of the first magnetic layer 11 L.

For example, the magnetic sensor 130 may include the circuit part 70 , and the circuit part may include the current supply circuit 70 a configured to supply an alternating current to the first interconnect 51 . The circuit part may include the detection circuit 70 d configured to detect a value corresponding to an electrical resistance between the first magnetic part 10 A and the first magnetic layer 11 L.

Multiple configurations including the first magnetic part 10 A and the second magnetic part 10 B illustrated in FIG. 29A may be provided. For example, the magnetic sensor 130 may include multiple first structure bodies 81 . For example, the multiple first structure bodies 81 are arranged along the third direction D 3 . The first magnetic part 10 A of one of the multiple first structure bodies 81 and the second magnetic part 10 B of another one of the multiple first structure bodies 81 are electrically connected to each other. The electrical connection is performed by a magnetic layer (e.g., a magnetic layer similar to the first magnetic layer 11 L).

FIG. 30A to FIG. 30D are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 30A is a plan view as viewed along arrow AR of FIG. 30 C and FIG. 30D . FIG. 30B is a line B 1 -B 2 cross-sectional view of FIG. 30A . FIG. 30C is a line A 1 -A 2 cross-sectional view of FIG. 30A . FIG. 30D is a line A 3 -A 4 cross-sectional view of FIG. 30A .

As shown in FIG. 30A to FIG. 30D , the magnetic sensor 131 according to the embodiment also includes the first structure body 81 . The configurations of the first magnetic part 10 A and the second magnetic part 10 B of the magnetic sensor 131 are different from those of the magnetic sensor 130 . Otherwise, the configuration of the magnetic sensor 131 is similar to the configuration of the magnetic sensor 130 .

In the example as shown in FIG. 30A and FIG. 30C , the second portion p 2 has the third length L 3 along the second direction D 2 that is longer than the first length L 1 , and the fourth length L 4 along the third direction D 3 that is longer than the second length L 2 . The third portion p 3 has the fifth length L 5 along the second direction D 2 that is longer than the first length L 1 , and the sixth length L 6 along the third direction D 3 that is longer than the second length L 2 .

The fifth portion p 5 has the ninth length L 9 along the second direction D 2 that is longer than the seventh length L 7 , and the tenth length L 10 along the third direction D 3 that is longer than the eighth length L 8 . The sixth portion p 6 has the eleventh length L 11 along the second direction D 2 that is longer than the seventh length L 7 , and the twelfth length L 12 along the third direction D 3 that is longer than the eighth length L 8 .

In the magnetic sensor 131 as well, a magnetic sensor can be provided in which the sensitivity can be increased further.

FIG. 31 is a schematic plan view illustrating a magnetic sensor according to the fourth embodiment.

As shown in FIG. 31 , the magnetic sensor 132 according to the embodiment includes multiple second structure bodies 82 . For example, one of the multiple second structure bodies 82 includes multiple first structure bodies 81 . The multiple first structure bodies 81 are arranged along the third direction D 3 .

The first magnetic part 10 A of one of the multiple first structure bodies 81 and the second magnetic part 10 B of another one of the multiple first structure bodies 81 are electrically connected to each other. For example, the electrical connection is performed by one of the multiple first conductive members 21 . The other one of the multiple first structure bodies 81 is next to the one of the multiple first structure bodies 81 .

The multiple second structure bodies 82 are arranged along the first direction D 1 . One of the multiple second structure bodies 82 and another one of the multiple second structure bodies 82 are electrically connected to each other. For example, the electrical connection is performed by one of the multiple first conductive members 21 . The multiple second structure bodies 82 are connected in a meandering configuration.

In such a magnetic sensor 132 , for example, the noise can be reduced further.

In the magnetic sensor 132 , the direction from the first magnetic part 10 A included in one of the multiple second structure bodies 82 toward the first magnetic part 10 A included in another one of the multiple second structure bodies 82 is aligned with the first direction D 1 . Two first magnetic parts 10 A that are arranged along the first direction D 1 are insulated from each other. In such a case, it is favorable for the magnetic flux to pass between the two first magnetic parts 10 A arranged along the first direction D 1 substantially without attenuating. For example, the distance (the gap) between the two first magnetic parts 10 A arranged along the first direction D 1 is set appropriately.

For example, as shown in FIG. 31 , the distance along the first direction D 1 between the first magnetic part 10 A of one of the multiple first structure bodies 81 included in one of the multiple second structure bodies 82 and the first magnetic part 10 A of another one of the multiple first structure bodies 81 included in another one of the multiple second structure bodies 82 is taken as a distance Ls. In the embodiment, it is favorable for the distance Ls to be shorter than at least one of the third length L 3 (referring to FIG. 29C ) or the fifth length L 5 (referring to FIG. 29C ). The other one of the multiple second structure bodies 82 is next to the one of the multiple second structure bodies 82 . Thereby, the magnetic flux easily passes between the two adjacent first magnetic parts 10 A substantially without attenuating. The external magnetic field can inflow into the element more effectively.

As shown in FIG. 31 , the magnetic field sensor 132 includes the multiple first structure bodies 81 . For example, the multiple first structure bodies 81 are arranged along the first direction D 1 . For example, the distance Ls along the first direction D 1 between the first magnetic part 10 A of one of the multiple first structure bodies 81 and the first magnetic part 10 A of another one of the multiple first structure bodies 81 is shorter than at least one of the third length L 3 or the fifth length L 5 . The other one of the multiple first structure bodies 81 is next to the one of the multiple first structure bodies 81 .

FIG. 32 is a schematic plan view illustrating a magnetic sensor according to the fourth embodiment.

As shown in FIG. 32 , the magnetic sensor 132 a according to the embodiment includes the multiple second structure bodies 82 . For example, one of the multiple second structure bodies 82 includes the multiple first structure bodies 81 . The multiple first structure bodies 81 are arranged along the third direction D 3 . The multiple second structure bodies 82 are electrically connected in parallel in the magnetic sensor 132 a . In the magnetic sensor 132 a as well, for example, the noise can be reduced further.

FIG. 33A to FIG. 33C are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 33A is a plan view as viewed along arrow AR of FIG. 33B and FIG. 33C . FIG. 33B is a line A 1 -A 2 cross-sectional view of FIG. 33A . FIG. 33C is a line A 3 -A 4 cross-sectional view of FIG. 33A .

As shown in FIG. 33A to FIG. 33C , the magnetic sensor 133 according to the embodiment includes the first element E 1 , the second element E 2 , the third element E 3 , the fourth element E 4 , and a first magnetic section 85 . Each of the first element E 1 , the second element E 2 , the third element E 3 , and the fourth element E 4 include the first magnetic part 10 A, the first conductive member 21 , and the first magnetic layer 11 L. These elements each may further include the first nonmagnetic portion 11 n (referring to FIG. 29B ).

The first magnetic part 10 A includes the first portion p 1 , the second portion p 2 , and the third portion p 3 . The direction from the second portion p 2 toward the third portion p 3 is aligned with the first direction D 1 . The first portion p 1 is between the second portion p 2 and the third portion p 3 in the first direction D 1 .

The first portion p 1 has the first length L 1 along the second direction D 2 crossing the first direction D 1 , and the second length L 2 along the third direction D 3 crossing a plane including the first direction D 1 and the second direction D 2 . The second portion p 2 has at least one of the third length L 3 along the second direction D 2 that is longer than the first length L 1 , or the fourth length L 4 along the third direction D 3 that is longer than the second length L 2 . The third portion p 3 has at least one of the fifth length L 5 along the second direction D 2 that is longer than the first length L 1 , or the sixth length L 6 along the third direction D 3 that is longer than the second length L 2 . In the example, the third length L 3 is longer than the first length L 1 . The fifth length L 5 is longer than the first length L 1 .

Similarly to the magnetic sensor 130 , the first magnetic layer 11 L is between at least a portion of the first portion p 1 and at least a portion of the first conductive member 21 in the second direction D 2 . The first nonmagnetic portion 11 n is between the first magnetic layer 11 L and at least a portion of the first portion p 1 in the second direction D 2 .

As shown in FIG. 33A , the direction from the first element E 1 toward the second element E 2 is aligned with the first direction D 1 . The direction from the third element E 3 toward the fourth element E 4 is aligned with the first direction D 1 . In the example, the direction from the third element E 3 toward the first element E 1 is aligned with the third direction D 3 . The direction from the fourth element E 4 toward the second element E 2 is aligned with the third direction D 3 .

In the example as shown in FIG. 33B , the third portion p 3 of the first element E 1 is continuous with the second portion p 2 of the second element E 2 . As shown in FIG. 33C , the third portion p 3 of the third element E 3 is continuous with the second portion p 2 of the fourth element E 4 .

As shown in FIG. 33B , the direction from the third portion p 3 of the first magnetic part 10 A of the first element E 1 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 . The direction from the second portion p 2 of the first magnetic part 10 A of the second element E 2 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 .

As shown in FIG. 33C , the direction from the third portion p 3 of the first magnetic part 10 A of the third element E 3 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 . The direction from the second portion p 2 of the first magnetic part 10 A of the fourth element E 4 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 .

For example, the external magnetic field which is the detection object is applied to the first magnetic section 85 . For example, the external magnetic field may have a component in the second direction D 2 . The magnetic flux that has the component in the second direction D 2 enters the first magnetic section 85 , enters the first magnetic part 10 A, becomes magnetic flux having a component in the first direction D 1 , and concentrates in the first portion p 1 . For example, the orientation of the magnetic flux applied to the first portion p 1 of the first element E 1 is the reverse of the orientation of the magnetic flux applied to the first portion p 1 of the second element E 2 . The orientation of the magnetic flux applied to the first portion p 1 of the third element E 3 is the reverse of the orientation of the magnetic flux applied to the first portion p 1 of the fourth element E 4 . The orientation of the magnetic flux applied to the first portion p 1 of the first element E 1 is the same as the orientation of the magnetic flux applied to the first portion p 1 of the third element E 3 . The orientation of the magnetic flux applied to the first portion p 1 of the second element E 2 is the same as the orientation of the magnetic flux applied to the first portion p 1 of the fourth element E 4 . For example, the first magnetic section 85 functions as a MFC.

The first magnetic section 85 may be considered to be a portion of the first magnetic part 10 A. In such a case, for example, the sum of the fifth length L 5 and the thickness along the second direction D 2 of the first magnetic section 85 may be considered to be the “length along the second direction of the third portion”.

In the example, the first magnetic section 85 contacts the first magnetic part 10 A. In the embodiment, a gap may be provided between the first magnetic section 85 and the first magnetic part 10 A. If the gap is sufficiently small compared to the size where the first magnetic part 10 A and the first magnetic section 85 contact each other (e.g., the width of the region where the first magnetic part 10 A and the first magnetic section 85 contact each other), the magnetic flux can pass between the first magnetic section 85 and the first magnetic part 10 A substantially without attenuating.

As shown in FIG. 33A , the first conductive member 21 of the first element E 1 is electrically connected to the first conductive member 21 of the fourth element E 4 . The first conductive member 21 of the second element E 2 is electrically connected to the first conductive member 21 of the third element E 3 . These electrical connections are performed by an interconnect 78 , etc.

In the example, each of the first element E 1 , the second element E 2 , the third element E 3 , and the fourth element E 4 includes multiple first magnetic parts 10 A. One of the multiple first magnetic layers 11 L is between a portion of one first conductive member 21 and one of the multiple first magnetic parts 10 A. Another one of the multiple first magnetic layers 11 L is between another portion of the one first conductive member 21 and another one of the multiple first magnetic parts 10 A. The other one of the multiple first magnetic parts 10 A is next to the one of the multiple first magnetic parts 10 A.

A bridge is formed of the first to fourth elements E 1 to E 4 . For example, a detection can be performed in which the noise is suppressed by detecting the potential (the signal) between the connection point between the first element E 1 and the fourth element and the connection point between the second element E 2 and the third element E 3 .

The circuit part 70 is provided in the example. The circuit part 70 includes, for example, the bias voltage application part 70 da and the detector 70 dd . The circuit part 70 (e.g., the bias voltage application part 70 da ) supplies a current to the first element E 1 , the second element E 2 , the third element E 3 , and the fourth element E 4 .

In the example, a voltage (e.g., a direct current voltage) is applied to the first conductive member 21 of the first element E 1 and the first conductive member 21 of the second element E 2 by the bias voltage application part 70 da . The first conductive member 21 of the third element E 3 and the first conductive member 21 of the fourth element E 4 are electrically connected to a ground GND.

The orientation of the current flowing through the first conductive member 21 of the first element E 1 includes a component having the same orientation as the current flowing through the first conductive member 21 of the second element E 2 . The orientation of the current flowing through the first conductive member 21 of the first element E 1 includes a component having the same orientation as the current flowing through the first conductive member 21 of the fourth element E 4 . The orientation of the current flowing through the first conductive member 21 of the third element E 3 includes a component having the same orientation as the current flowing through the first conductive member 21 of the second element E 2 . For example, the current flowing through the first conductive member 21 of the first element E 1 , the current flowing through the first conductive member 21 of the second element E 2 , the current flowing through the first conductive member 21 of the third element E 3 , and the current flowing through the first conductive member 21 of the fourth element E 4 are along the third direction D 3 .

For example, the detector 70 dd detects the potential (the signal) between the connection point between the first element E 1 and the fourth element E 4 and the connection point between the second element E 2 and the third element E 3 .

A detection can be performed in which the noise is suppressed.

In the example, a portion of the first magnetic section 85 is between the first magnetic layer 11 L of the first element E 1 and the first magnetic layer 11 L of the second element E 2 in the first direction D 1 . Another portion of the first magnetic section 85 is between the first magnetic layer 11 L of the third element E 3 and the first magnetic layer 11 L of the fourth element E 4 in the first direction D 1 .

FIG. 34A to FIG. 34C are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 34A is a plan view as viewed along arrow AR of FIG. 34B and FIG. 34C . FIG. 34B is a line A 1 -A 2 cross-sectional view of FIG. 34A . FIG. 34C is a line A 3 -A 4 cross-sectional view of FIG. 34A .

As shown in FIG. 34A to FIG. 34C , the magnetic sensor 134 according to the embodiment also includes the first element E 1 , the second element E 2 , the third element E 3 , the fourth element E 4 , and the first magnetic section 85 . The configuration of the first magnetic part 10 A of the magnetic sensor 134 is different from that of the magnetic sensor 133 . Otherwise, the configuration of the magnetic sensor 134 may be the same as the configuration of the magnetic sensor 133 .

In the magnetic sensor 134 as shown in FIG. 34A and FIG. 34B , the second portion p 2 has the third length L 3 along the second direction D 2 that is longer than the first length L 1 and the fourth length L 4 along the third direction D 3 that is longer than the second length L 2 . The third portion p 3 has the fifth length L 5 along the second direction D 2 that is longer than the first length L 1 , and the sixth length L 6 along the third direction D 3 that is longer than the second length L 2 .

In the magnetic sensors 133 and 134 as well, a magnetic sensor can be provided in which the sensitivity can be increased.

FIG. 35A to FIG. 35C and FIG. 36 are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 35A and FIG. 36 are plan views when viewed along arrow AR of FIG. 35B and FIG. 35C . FIG. 35B is a line A 1 -A 2 cross-sectional view of FIG. 35A . FIG. 35C is a line A 3 -A 4 cross-sectional view of FIG. 35A .

As shown in FIG. 35A to FIG. 35C , the magnetic sensor 135 according to the embodiment includes the first element E 1 , the second element E 2 , the third element E 3 , the fourth element E 4 , the first magnetic section 85 , and a second magnetic section 86 . The first to fourth interconnects 51 to 54 are provided in the magnetic sensor 135 . The electrical connections of the first to fourth elements E 1 to E 4 of the magnetic sensor 135 are different from those of the magnetic sensor 133 . Otherwise, the configuration of the magnetic sensor 135 (e.g., the configurations of the first to fourth elements E 1 to E 4 ) may be the same as the configuration of the magnetic sensor 133 .

For example, in the magnetic sensor 135 as well, the first magnetic layer 11 L is between at least a portion of the first portion p 1 and at least a portion of the first conductive member 21 in the second direction D 2 . For example, the direction from the first element E 1 toward the second element E 2 is aligned with the first direction D 1 . The direction from the third element E 3 toward the fourth element E 4 is aligned with the first direction D 1 .

As shown in FIG. 35B , the direction from the third portion p 3 of the first magnetic part 10 A of the first element E 1 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 . The direction from the second portion p 2 of the first magnetic part 10 A of the second element E 2 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 . As shown in FIG. 35C , the direction from the third portion p 3 of the first magnetic part 10 A of the third element E 3 toward a portion of the second magnetic section 86 is aligned with the second direction D 2 . The direction from the second portion p 2 of the first magnetic part 10 A of the fourth element E 4 toward a portion of the second magnetic section 86 is aligned with the second direction D 2 .

As shown in FIG. 35A , the first conductive member 21 of the first element E 1 is electrically connected to the first conductive member 21 of the fourth element E 4 . The first conductive member 21 of the second element E 2 is electrically connected to the first conductive member 21 of the third element E 3 . These electrical connections are performed by the interconnect 78 , etc.

For example, the circuit part 70 is provided as shown in FIG. 35A . The circuit part 70 includes, for example, the bias voltage application part 70 da and the detector 70 dd . The circuit part 70 (e.g., the bias voltage application part 70 da ) supplies a current to the first element E 1 , the second element E 2 , the third element E 3 , and the fourth element E 4 .

The orientation of the current flowing through the first conductive member 21 of the first element E 1 includes a reverse component of the orientation of the current flowing through the first conductive member 21 of the second element E 2 . The orientation of the current flowing through the first conductive member 21 of the first element E 1 includes a component having the same orientation as the current flowing through the first conductive member 21 of the fourth element E 4 . The orientation of the current flowing through the first conductive member 21 of the third element E 3 includes a component having the same orientation as the current flowing through the first conductive member 21 of the second element E 2 .

For example, the detector 70 dd detects the potential (the signal) between the connection point between the first element E 1 and the fourth element and the connection point between the second element E 2 and the third element E 3 . A detection can be performed in which the noise is suppressed.

In the magnetic sensor 135 as shown in FIG. 35B , the first magnetic section 85 is between the first magnetic layer 11 L of the first element E 1 and the first magnetic layer 11 L of the second element E 2 in the first direction D 1 . As shown in FIG. 35C , the second magnetic section 86 is between the first magnetic layer 11 L of the third element E 3 and the first magnetic layer 11 L of the fourth element E 4 in the first direction D 1 .

In the example as shown in FIG. 35A to FIG. 35C , at least a portion (e.g., the portion 51 p ) of the first interconnect 51 overlaps the first portion p 1 of the first magnetic part 10 A of the first element E 1 and the first portion p 1 of the first magnetic part 10 A of the second element E 2 in the second direction D 2 . In the example, at least a portion of the second interconnect 52 overlaps the first portion p 1 of the first magnetic part 10 A of the second element E 2 and the first portion p 1 of the first magnetic part 10 A of the fourth element E 4 in the second direction D 2 . The current that flows through at least a portion (e.g., the portion 51 p ) of the first interconnect 51 and the current that flows through at least a portion of the second interconnect 52 are along the third direction D 3 .

For example, the magnetic field that is generated by the current flowing through the first interconnect 51 is applied to the first element E 1 . The magnetic field that is generated by the current flowing through the second interconnect 52 is applied to the second element E 2 . For example, the magnetic field that is generated by the current flowing through the third interconnect 53 is applied to the third element E 3 . For example, the magnetic field that is generated by the current flowing through the fourth interconnect 54 is applied to the fourth element E 4 . For example, the position in the Z-axis direction of the first interconnect 51 is different from the position in the Z-axis direction of the first element E 1 . For example, the position in the Z-axis direction of the second interconnect 52 is different from the position in the Z-axis direction of the second element E 2 . For example, the position in the Z-axis direction of the third interconnect 53 is different from the position in the Z-axis direction of the third element E 3 . For example, the position in the Z-axis direction of the fourth interconnect 54 is different from the position in the Z-axis direction of the fourth element E 4 .

As shown in FIG. 36 , one end of the first interconnect 51 is electrically connected to one end of the fourth interconnect 54 . One end of the second interconnect 52 is electrically connected to one end of the third interconnect 53 . These electrical connections are performed by an interconnect 78 a and an interconnect 78 b.

The magnetic sensor 135 includes the current supply circuit 70 a . For example, the current supply circuit 70 a supplies an alternating current to a current path including the first interconnect 51 and the fourth interconnect 54 and supplies an alternating current to a current path including the second interconnect 52 and the third interconnect 53 . As shown in FIG. 36 , for example, the connections between the current supply circuit 70 a and these current paths are performed by an interconnect 78 c and an interconnect 78 d . For example, the connections between the ground GND and these current paths are performed by, for example, an interconnect 78 e and an interconnect 78 f.

The alternating currents are supplied to the first to fourth interconnects 51 to 54 thus connected; and the first to fourth elements E 1 to E 4 have a bridge connection. For example, the alternating current magnetic field that is applied to the first element E 1 has the same phase as the alternating current magnetic field applied to the fourth element E 4 . For example, the alternating current magnetic field that is applied to the second element E 2 has the same phase as the alternating current magnetic field applied to the third element E 3 . The alternating current magnetic field that is applied to the first element E 1 and the alternating current magnetic field that is applied to the fourth element E 4 have the reverse phases of the alternating current magnetic field applied to the second element E 2 and the alternating current magnetic field applied to the third element E 3 . The noise can be reduced further. The sensitivity can be increased further.

FIG. 37A to FIG. 37C and FIG. 38 are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 37A and FIG. 38 are plan views when viewed along arrow AR of FIG. 37B and FIG. 37C . FIG. 37B is a line A 1 -A 2 cross-sectional view of FIG. 37A . FIG. 37C is a line A 3 -A 4 cross-sectional view of FIG. 37A .

As shown in FIG. 37A to FIG. 37C , the magnetic sensor 136 according to the embodiment also includes the first element E 1 , the second element E 2 , the third element E 3 , the fourth element E 4 , the first magnetic section 85 , and the second magnetic section 86 . The positions of the first magnetic section 85 and the second magnetic section 86 of the magnetic sensor 136 are different from those of the magnetic sensor 135 . Otherwise, the configuration of the magnetic sensor 136 may be the same as the configuration of the magnetic sensor 135 .

In the magnetic sensor 136 as shown in FIG. 37B and FIG. 37C , the first magnetic section 85 is between the first interconnect 51 and the second interconnect 52 in the first direction D 1 . The second magnetic section 86 is between the third interconnect 53 and the fourth interconnect 54 in the first direction D 1 .

In the magnetic sensor 136 as shown in FIG. 38 as well, an alternating current is supplied to the first to fourth interconnects 51 to 54 ; and the first to fourth elements E 1 to E 4 have a bridge connection. The noise can be reduced further thereby. The sensitivity can be increased further.

In the magnetic sensors 135 and 136 as well, a magnetic sensor can be provided in which the sensitivity can be increased. The first to fourth interconnects 51 to 54 are provided proximally to the first magnetic section 85 and the second magnetic section 86 . For example, the magnetic field that is due to the current flowing in the first interconnect 51 and the second interconnect 52 is applied to the first magnetic section 85 . For example, the magnetic field that is due to the current flowing in the third interconnect 53 and the fourth interconnect 54 is applied to the second magnetic section 86 . The first to fourth interconnects 51 to 54 respectively may not overlap the first to fourth elements E 1 to E 4 in the second direction D 2 .

FIG. 39A to FIG. 39D are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 39A is a plan view as viewed along arrow AR of FIG. 39C and FIG. 39D . FIG. 39B is a line B 1 -B 2 cross-sectional view of FIG. 39A . FIG. 39C is a line A 1 -A 2 cross-sectional view of FIG. 39A . FIG. 39D is a line A 3 -A 4 cross-sectional view of FIG. 39A .

As shown in FIG. 39A to FIG. 39D , the magnetic sensor 137 a according to the embodiment includes the first structure body 81 . The first structure body 81 includes the first magnetic part 10 A, the second magnetic part 10 B, the first magnetic layer 11 L, the first nonmagnetic portion 11 n , and the second nonmagnetic portion 12 n.

The configurations of the first magnetic part 10 A and the second magnetic part 10 B of the magnetic sensor 133 are applicable to the first magnetic part 10 A and the second magnetic part 10 B of the magnetic sensor 137 a.

As shown in FIG. 39B and FIG. 39C , for example, the direction from a portion of the first portion p 1 toward the portion 11 Lp of the first magnetic layer 11 L is aligned with the second direction D 2 . As shown in FIG. 39B and FIG. 39D , for example, the direction from a portion of the fourth portion p 4 toward the other portion 11 Lq of the first magnetic layer 11 L is aligned with the second direction D 2 .

The first nonmagnetic portion 11 n is provided between the portion of the first portion p 1 recited above and the portion 11 Lp of the first magnetic layer 11 L recited above. The second nonmagnetic portion 12 n is provided between the portion of the fourth portion p 4 recited above and the other portion 11 Lq of the first magnetic layer 11 L recited above.

The portion of the first portion p 1 recited above, the portion 11 Lp of the first magnetic layer 11 L recited above, and the first nonmagnetic portion 11 n are included in one element. The portion of the fourth portion p 4 recited above, the other portion 11 Lq of the first magnetic layer 11 L recited above, and the second nonmagnetic portion 12 n are included in another one element. The electrical resistances of these elements can change according to an external magnetic field. These elements are connected in series by the first magnetic layer 11 L. The effects of the noise can be suppressed. A magnetic sensor can be provided in which the sensitivity can be increased further.

FIG. 40A to FIG. 40D are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 40A is a plan view as viewed along arrow AR of FIG. 40C and FIG. 40D . FIG. 40B is a line B 1 -B 2 cross-sectional view of FIG. 40A . FIG. 40C is a line A 1 -A 2 cross-sectional view of FIG. 40A . FIG. 40D is a line A 3 -A 4 cross-sectional view of FIG. 40A .

As shown in FIG. 40A to FIG. 40D , the magnetic sensor 137 b according to the embodiment also includes the first structure body 81 . The configurations of the first magnetic part 10 A and the second magnetic part 10 B of the magnetic sensor 137 b are different from those of the magnetic sensor 137 a . Otherwise, the configuration of the magnetic sensor 137 b is similar to the configuration of the magnetic sensor 137 a.

In the example as shown in FIG. 40A and FIG. 40C , the second portion p 2 has the third length L 3 along the second direction D 2 that is longer than the first length L 1 , and the fourth length L 4 along the third direction D 3 that is longer than the second length L 2 . The third portion p 3 has the fifth length L 5 along the second direction D 2 that is longer than the first length L 1 , and the sixth length L 6 along the third direction D 3 that is longer than the second length L 2 .

The fifth portion p 5 has the ninth length L 9 along the second direction D 2 that is longer than the seventh length L 7 , and the tenth length L 10 along the third direction D 3 that is longer than the eighth length L 8 . The sixth portion p 6 has the eleventh length L 11 along the second direction D 2 that is longer than the seventh length L 7 , and the twelfth length L 12 along the third direction D 3 that is longer than the eighth length L 8 .

FIG. 41 is a schematic plan view illustrating a magnetic sensor according to the fourth embodiment.

As shown in FIG. 41 , the magnetic sensor 137 c according to the embodiment includes the multiple second structure bodies 82 . For example, one of the multiple second structure bodies 82 includes the multiple first structure bodies 81 . The multiple first structure bodies 81 are arranged along the third direction D 3 .

The first magnetic part 10 A of one of the multiple first structure bodies 81 and the second magnetic part 10 B of another one of the multiple first structure bodies 81 are electrically connected to each other. For example, the electrical connection is performed by one of the multiple first magnetic layers 11 L. The other one of the multiple first structure bodies 81 is next to the one of the multiple first structure bodies 81 .

The multiple second structure bodies 82 are arranged along the first direction D 1 . One of the multiple second structure bodies 82 and another one of the multiple second structure bodies 82 are electrically connected to each other. For example, the electrical connection is performed by one of the multiple first magnetic layers 11 L.

In the magnetic sensor 137 c , it is favorable for the distance Ls to be shorter than at least one of the third length L 3 or the fifth length L 5 .

FIG. 42A to FIG. 42C are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 42A is a plan view as viewed along arrow AR of FIG. 42B and FIG. 42C . FIG. 42B is a line A 1 -A 2 cross-sectional view of FIG. 42A . FIG. 42C is a line A 3 -A 4 cross-sectional view of FIG. 42A .

As shown in FIG. 42A to FIG. 42C , the magnetic sensor 137 d according to the embodiment includes the first element E 1 , the second element E 2 , the third element E 3 , the fourth element E 4 , and the first magnetic section 85 . Each of the first element E 1 , the second element E 2 , the third element E 3 , and the fourth element E 4 includes the first magnetic part 10 A, the first magnetic layer 11 L, and the first nonmagnetic portion 11 n.

The configurations of the first magnetic part 10 A and the second magnetic part 10 B of the magnetic sensor 133 are applicable to the first magnetic part 10 A and the second magnetic part 10 B of the magnetic sensor 137 d.

As shown in FIG. 42B , the direction from the third portion p 3 of the first magnetic part 10 A of the first element E 1 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 . The direction from the second portion p 2 of the first magnetic part 10 A of the second element E 2 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 .

As shown in FIG. 42C , the direction from the third portion p 3 of the first magnetic part 10 A of the third element E 3 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 . The direction from the second portion p 2 of the first magnetic part 10 A of the fourth element E 4 toward a portion of the first magnetic section 85 is aligned with the second direction D 2 .

FIG. 43A to FIG. 43C are schematic views illustrating a magnetic sensor according to the fourth embodiment.

FIG. 43A is a plan view as viewed along arrow AR of FIG. 43B and FIG. 43C . FIG. 43B is a line A 1 -A 2 cross-sectional view of FIG. 43A . FIG. 43C is a line A 3 -A 4 cross-sectional view of FIG. 43A .

As shown in FIG. 43A to FIG. 43C , the magnetic sensor 137 e according to the embodiment also includes the first element E 1 , the second element E 2 , the third element E 3 , the fourth element E 4 , and the first magnetic section 85 . The configuration of the first magnetic part 10 A of the magnetic sensor 137 e is different from that of the magnetic sensor 137 d . Otherwise, the configuration of the magnetic sensor 137 e may be the same as the configuration of the magnetic sensor 137 d.

In the magnetic sensor 137 e as shown in FIG. 43A and FIG. 43B , the second portion p 2 has the third length L 3 along the second direction D 2 that is longer than the first length L 1 , and the fourth length L 4 along the third direction D 3 that is longer than the second length L 2 . The third portion p 3 has the fifth length L 5 along the second direction D 2 that is longer than the first length L 1 , and the sixth length L 6 along the third direction D 3 that is longer than the second length L 2 .

In the magnetic sensors 137 a to 137 e as well, a magnetic sensor can be provided in which the sensitivity can be increased.

As in the magnetic sensor 137 a , the first conductive member 21 may not be provided in one element in at least one of the magnetic sensor 135 or the magnetic sensor 136 . As in the magnetic sensor 137 a , one element may include a portion of the first portion p 1 , the portion 11 Lp of the first magnetic layer 11 L, and the first nonmagnetic portion 11 n in at least one of the magnetic sensor 135 or the magnetic sensor 136 . As in the magnetic sensor 137 a , one element may include a portion of the fourth portion p 4 , the portion 11 Lq of the first magnetic layer 11 L, and the second nonmagnetic portion 12 n . In such a magnetic sensor as well, a magnetic sensor can be provided in which the sensitivity can be increased.

FIG. 44 is a schematic view illustrating a magnetic sensor according to the fourth embodiment.

FIG. 44 illustrates the configuration of a portion of the circuit part 70 . In the example, the first element E 1 and the fourth element E 4 are connected electrically in series. The second element E 2 and the third element E 3 are connected electrically in series. The potential difference between the connection point between the first element E 1 and the fourth element E 4 and the connection point between the second element E 2 and the third element E 3 is input to an amplifier 75 a . The amplifier 75 a is, for example, a differential amplifier. The output of the amplifier 75 a is electrically connected to the ground GND via a resistance 75 b and an inductor 75 c . For example, the inductor 75 c corresponds to the first to fourth interconnects 54 , etc. Such a circuit is, for example, a negative feedback circuit. By using such a circuit, the detection of the magnetic field which is the detection object is possible in a state in which the feedback of the change of the characteristics of these elements, e.g., the fluctuation of the operating points of the first to fourth elements E 1 to E 4 due to the magnetic field, is suppressed. For example, the operating point fluctuation of the elements is suppressed; and a stable detection output is obtained. Such a circuit is applicable to any magnetic sensor recited above.

The magnetic sensors 130 to 136 and 137 a to 137 e may be included in a diagnostic device 500 . The diagnostic device 500 according to the embodiment includes the magnetic sensor according to the fourth embodiment, and a processor processing an output signal obtained from the magnetic sensor. The processor includes, for example, at least one of a signal processor 508 or a data processor 512 . The processor includes, for example, a computer, etc.

The embodiments may include the following configurations (e.g., technological proposals).

Configuration A12

A magnetic sensor, comprising a first structure body,

the first structure body including:

a first magnetic part including a first portion, a second portion, and a third portion, a direction from the second portion toward the third portion being aligned with a first direction, the first portion being between the second portion and the third portion in the first direction, the first portion having a first length and a second length, the first length being along a second direction crossing the first direction, the second length being along a third direction crossing a plane including the first direction and the second direction, the second portion having at least one of a third length along the second direction or a fourth length along the third direction, the third length being longer than the first length, the fourth length being longer than the second length, the third portion having at least one of a fifth length along the second direction or a sixth length along the third direction, the fifth length being longer than the first length, the sixth length being longer than the second length;

a second magnetic part including a fourth portion, a fifth portion, and a sixth portion, a direction from the fifth portion toward the sixth portion being aligned with the first direction, the fourth portion being between the fifth portion and the sixth portion in the first direction, the fourth portion having a seventh length along the second direction and an eighth length along the third direction, the fifth portion having at least one of a ninth length along the second direction or a tenth length along the third direction, the ninth length being longer than the seventh length, the tenth length being longer than the eighth length, the sixth portion having at least one of an eleventh length along the second direction or a twelfth length along the third direction, the eleventh length being longer than the seventh length, the twelfth length being longer than the eighth length;

a first conductive member, a direction from a portion of the first portion toward a portion of the first conductive member being aligned with the second direction, a direction from a portion of the fourth portion toward an other portion of the first conductive member being aligned with the second direction;

a first magnetic layer provided between the portion of the first portion and the portion of the first conductive member;

a second magnetic layer provided between the portion of the fourth portion and the other portion of the first conductive member;

a first nonmagnetic portion provided between the first magnetic layer and the portion of the first portion; and

a second nonmagnetic portion provided between the second magnetic layer and the portion of the fourth portion.

Configuration A13

The magnetic sensor according to Configuration A12, further comprising a first interconnect,

at least a portion of the first interconnect being along the third direction.

Configuration A14

The magnetic sensor according to Configuration A12 or A13, comprising a plurality of the first structure bodies,

the plurality of first structure bodies being arranged along the third direction,

the first magnetic part of one of the plurality of first structure bodies and the second magnetic part of an other one of the plurality of first structure bodies being electrically connected to each other.

Configuration A15

The magnetic sensor according to Configuration A12, further comprising a plurality of second structure bodies,

one of the plurality of second structure bodies including a plurality of the first structure bodies,

the plurality of first structure bodies being arranged along the third direction,

the first magnetic part of one of the plurality of first structure bodies and the second magnetic part of an other one of the plurality of first structure bodies being electrically connected to each other,

the plurality of second structure bodies being arranged along the first direction,

one of the plurality of second structure bodies and an other one of the plurality of second structure bodies being electrically connected to each other.

Configuration A16

The magnetic sensor according to Configuration A15, wherein a distance along the first direction between the first magnetic part of one of the plurality of first structure bodies included in the one of the plurality of second structure bodies and the first magnetic part of an other one of the plurality of first structure bodies included in the other one of the plurality of second structure bodies is shorter than at least one of the third length or the fifth length.

Configuration A17

A magnetic sensor, comprising:

a first element;

a second element;

a third element;

a fourth element; and

a first magnetic section,

each of the first element, the second element, the third element, and the fourth element including a first magnetic part, a first conductive member, and a first magnetic layer,

the first magnetic part including a first portion, a second portion, and a third portion, a direction from the second portion toward the third portion being aligned with a first direction, the first portion being between the second portion and the third portion in the first direction, the first portion having a first length and a second length, the first length being along a second direction crossing the first direction, the second length being along a third direction crossing a plane including the first direction and the second direction, the second portion having at least one of a third length along the second direction or a fourth length along the third direction, the third length being longer than the first length, the fourth length being longer than the second length, the third portion having at least one of a fifth length along the second direction or a sixth length along the third direction, the fifth length being longer than the first length, the sixth length being longer than the second length,

the first magnetic layer being between at least a portion of the first portion and at least a portion of the first conductive member in the second direction,

a direction from the first element toward the second element being aligned with the first direction,

a direction from the third element toward the fourth element being aligned with the first direction,

a direction from the third portion of the first magnetic part of the first element toward a portion of the first magnetic section being aligned with the second direction,

a direction from the second portion of the first magnetic part of the second element toward a portion of the first magnetic section being aligned with the second direction,

a direction from the third portion of the first magnetic part of the third element toward a portion of the first magnetic section being aligned with the second direction,

a direction from the second portion of the first magnetic part of the fourth element toward a portion of the first magnetic section being aligned with the second direction,

the first conductive member of the first element being electrically connected to the first conductive member of the fourth element,

the first conductive member of the second element being electrically connected to the first conductive member of the third element.

Configuration A18

The magnetic sensor according to Configuration A17, further comprising a circuit part,

the circuit part being configured to supply a current to the first element, the second element, the third element, and the fourth element,

an orientation of the current flowing through the first conductive member of the first element includes a component having a same orientation as the current flowing through the first conductive member of the second element,

the orientation of the current flowing through the first conductive member of the first element includes a component having a same orientation as the current flowing through the first conductive member of the fourth element,

an orientation of the current flowing through the first conductive member of the third element includes a component having the same orientation as the current flowing through the first conductive member of the second element.

Configuration A19

A magnetic sensor, comprising:

a first element;

a second element;

a third element;

a fourth element;

a first magnetic section; and

a second magnetic section,

each of the first element, the second element, the third element, and the fourth element including a first magnetic part, a first conductive member, and a first magnetic layer,

the first magnetic part including a first portion, a second portion, and a third portion, a direction from the second portion toward the third portion being aligned with a first direction, the first portion being between the second portion and the third portion in the first direction, the first portion having a first length and a second length, the first length being along a second direction crossing the first direction, the second length being along a third direction crossing a plane including the first direction and the second direction, the second portion having at least one of a third length along the second direction or a fourth length along the third direction, the third length being longer than the first length, the fourth length being longer than the second length, the third portion having at least one of a fifth length along the second direction or a sixth length along the third direction, the fifth length being longer than the first length, the sixth length being longer than the second length,

the first magnetic layer being between at least a portion of the first portion and at least a portion of the first conductive member in the second direction,

a direction from the first element toward the second element being aligned with the first direction,

a direction from the third element toward the fourth element being aligned with the first direction,

a direction from the third portion of the first magnetic part of the first element toward a portion of the first magnetic section being aligned with the second direction,

a direction from the second portion of the first magnetic part of the second element toward a portion of the first magnetic section being aligned with the second direction,

a direction from the third portion of the first magnetic part of the third element toward a portion of the second magnetic section being aligned with the second direction,

a direction from the second portion of the first magnetic part of the fourth element toward a portion of the second magnetic section being aligned with the second direction,

the first conductive member of the first element being electrically connected to the first conductive member of the fourth element,

the first conductive member of the second element being electrically connected to the first conductive member of the third element.

Configuration A20

The magnetic sensor according to Configuration A17, further comprising a circuit part,

the circuit part being configured to supply a current to the first element, the second element, the third element, and the fourth element,

an orientation of the current flowing through the first conductive member of the first element includes a reverse component of an orientation of the current flowing through the first conductive member of the second element,

the orientation of the current flowing through the first conductive member of the first element includes a component having a same orientation as the current flowing through the first conductive member of the fourth element,

an orientation of the current flowing through the first conductive member of the third element includes a component having the same orientation as the current flowing through the first conductive member of the second element.

Configuration A21

The magnetic sensor according to Configuration A20, further comprising:

a first interconnect;

a second interconnect;

a third interconnect;

a fourth interconnect; and

a current supply circuit,

one end of the first interconnect being electrically connected to one end of the fourth interconnect,

one end of the second interconnect being electrically connected to one end of the third interconnect,

the current supply circuit being configured to supply an alternating current to a current path including the first interconnect and the fourth interconnect, and supplying an alternating current to a current path including the second interconnect and the third interconnect.

Configuration A22

A magnetic sensor, comprising a first structure body,

the first structure body including:

a first magnetic part including a first portion, a second portion, and a third portion, a direction from the second portion toward the third portion being aligned with a first direction, the first portion being between the second portion and the third portion in the first direction, the first portion having a first length and a second length, the first length being along a second direction crossing the first direction, the second length being along a third direction crossing a plane including the first direction and the second direction, the second portion having at least one of a third length along the second direction or a fourth length along the third direction, the third length being longer than the first length, the fourth length being longer than the second length, the third portion having at least one of a fifth length along the second direction or a sixth length along the third direction, the fifth length being longer than the first length, the sixth length being longer than the second length; a second magnetic part including a fourth portion, a fifth portion, and a sixth portion, a direction from the fifth portion toward the sixth portion being aligned with the first direction, the fourth portion being between the fifth portion and the sixth portion in the first direction, the fourth portion having a seventh length along the second direction and an eighth length along the third direction, the fifth portion having at least one of a ninth length along the second direction or a tenth length along the third direction, the ninth length being longer than the seventh length, the tenth length being longer than the eighth length, the sixth portion having at least one of an eleventh length along the second direction or a twelfth length along the third direction, the eleventh length being longer than the seventh length, the twelfth length being longer than the eighth length; a first magnetic layer, a direction from a portion of the first portion toward a portion of the first magnetic layer being aligned with the second direction, a direction from a portion of the fourth portion toward an other portion of the first magnetic layer being aligned with the second direction; a first nonmagnetic portion provided between the portion of the first portion and the portion of the first magnetic layer; and a second nonmagnetic portion provided between the portion of the fourth portion and the other portion of the first magnetic layer.

Configuration A23

The magnetic sensor according to Configuration A22, further comprising a first interconnect,

at least a portion of the first interconnect being along the third direction.

Configuration A24

The magnetic sensor according to Configuration A22 or A23, comprising a plurality of the first structure bodies,

the plurality of first structure bodies being arranged along the third direction,

the first magnetic part of one of the plurality of first structure bodies and the second magnetic part of an other one of the plurality of first structure bodies being electrically connected to each other.

Configuration A25

The magnetic sensor according to Configuration A22, further comprising a plurality of second structure bodies,

one of the plurality of second structure bodies including a plurality of the first structure bodies,

the plurality of first structure bodies being arranged along the third direction,

the first magnetic part of one of the plurality of first structure bodies and the second magnetic part of an other one of the plurality of first structure bodies being electrically connected to each other,

the plurality of second structure bodies being arranged along the first direction,

one of the plurality of second structure bodies and an other one of the plurality of second structure bodies being electrically connected to each other,

a distance along the first direction between the first magnetic part of one of the plurality of first structure bodies included in the one of the plurality of second structure bodies and the first magnetic part of an other one of the plurality of first structure bodies included in the other one of the plurality of second structure bodies being shorter than at least one of the third length or the fifth length.

Configuration A26

A magnetic sensor, comprising:

a first element;

a second element;

a third element;

a fourth element; and

a magnetic section,

each of the first element, the second element, the third element, and the fourth element including a first magnetic part, a first magnetic layer, and a first nonmagnetic portion,

the first magnetic part including a first portion, a second portion, and a third portion, a direction from the second portion toward the third portion being aligned with a first direction, the first portion being between the second portion and the third portion in the first direction, the first portion having a first length and a second length, the first length being along a second direction crossing the first direction, the second length being along a third direction crossing a plane including the first direction and the second direction, the second portion having at least one of a third length along the second direction or a fourth length along the third direction, the third length being longer than the first length, the fourth length being longer than the second length, the third portion having at least one of a fifth length along the second direction or a sixth length along the third direction, the fifth length being longer than the first length, the sixth length being longer than the second length,

the first nonmagnetic portion being between at least a portion of the first portion and at least a portion of the first magnetic layer in the second direction,

a direction from the first element toward the second element being aligned with the first direction,

a direction from the third element toward the fourth element being aligned with the first direction,

a direction from the third portion of the first magnetic part of the first element toward a portion of the magnetic section being aligned with the second direction,

a direction from the second portion of the first magnetic part of the second element toward a portion of the magnetic section being aligned with the second direction,

a direction from the third portion of the first magnetic part of the third element toward a portion of the magnetic section being aligned with the second direction,

a direction from the second portion of the first magnetic part of the fourth element toward a portion of the magnetic section being aligned with the second direction,

the first magnetic layer of the first element being electrically connected to the first magnetic layer of the fourth element,

the first magnetic layer of the second element being electrically connected to the first magnetic layer of the third element.

Configuration A27

A magnetic sensor, comprising:

a first element;

a second element;

a third element;

a fourth element;

a first magnetic section; and

a second magnetic section,

each of the first element, the second element, the third element, and the fourth element including a first magnetic part, a first conductive member, and a first magnetic layer,

the first magnetic part including a first portion, a second portion, and a third portion, a direction from the second portion toward the third portion being aligned with a first direction, the first portion being between the second portion and the third portion in the first direction, the first portion having a first length and a second length, the first length being along a second direction crossing the first direction, the second length being along a third direction crossing a plane including the first direction and the second direction, the second portion having at least one of a third length along the second direction or a fourth length along the third direction, the third length being longer than the first length, the fourth length being longer than the second length, the third portion having at least one of a fifth length along the second direction or a sixth length along the third direction, the fifth length being longer than the first length, the sixth length being longer than the second length,

the first magnetic layer being between at least a portion of the first portion and at least a portion of the first conductive member in the second direction,

a direction from the first element toward the second element being aligned with the first direction,

a direction from the third element toward the fourth element being aligned with the first direction,

a direction from the third portion of the first magnetic part of the first element toward a portion of the first magnetic section being aligned with the second direction,

a direction from the second portion of the first magnetic part of the second element toward a portion of the first magnetic section being aligned with the second direction,

a direction from the third portion of the first magnetic part of the third element toward a portion of the second magnetic section being aligned with the second direction,

a direction from the second portion of the first magnetic part of the fourth element toward a portion of the second magnetic section being aligned with the second direction,

the first magnetic layer of the first element being electrically connected to the first magnetic layer of the fourth element,

the first magnetic layer of the second element being electrically connected to the first magnetic layer of the third element.

Configuration A28

The magnetic sensor according to Configuration A27, further comprising:

a first interconnect;

a second interconnect;

a third interconnect;

a fourth interconnect; and

a current supply circuit.

Configuration A29

A diagnostic device, comprising:

the magnetic sensor according to any one of Configurations A12 to A28; and

a processor processing an output signal obtained from the magnetic sensor.

According to the embodiments, a magnetic sensor and a diagnostic device can be provided in which the sensitivity can be increased.

In the specification of the application, “perpendicular” and “parallel” refer to not only strictly perpendicular and strictly parallel but also include, for example, the fluctuation due to manufacturing processes, etc. It is sufficient to be substantially perpendicular and substantially parallel.

Hereinabove, exemplary embodiments of the invention are described with reference to specific examples. However, the embodiments of the invention are not limited to these specific examples. For example, one skilled in the art may similarly practice the invention by appropriately selecting specific configurations of components included in magnetic sensors such as magnetic layers, nonmagnetic portions, interconnects, resistance portions, circuit parts, etc., from known art. Such practice is included in the scope of the invention to the extent that similar effects thereto are obtained.

Further, any two or more components of the specific examples may be combined within the extent of technical feasibility and are included in the scope of the invention to the extent that the purport of the invention is included.

Moreover, all magnetic sensors, and diagnostic devices practicable by an appropriate design modification by one skilled in the art based on the magnetic sensors, and the diagnostic devices described above as embodiments of the invention also are within the scope of the invention to the extent that the purport of the invention is included.

Various other variations and modifications can be conceived by those skilled in the art within the spirit of the invention, and it is understood that such variations and modifications are also encompassed within the scope of the invention.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.