Sensing display apparatus

This application claims the priority benefits of Taiwan application serial no. 107131348, filed on Sep. 6, 2018 and Taiwan application serial no. 107146277, filed on Dec. 20, 2018. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of specification.

The disclosure relates to a sensing display apparatus, and more particularly to a sensing display apparatus having a shielding layer.

At present, in order to improve the convenience of product use, many manufacturers install sensing device in products. For example, fingerprint sensors are often included in existing mobile phones. In the existing fingerprint identification technology, the sensing device detects the light reflected by the fingerprint of finger, and the topography of the fingerprint has different intensity of reflected light, so different fingerprint patterns are distinguished by the sensing apparatus.

However, when the sensing device substrate is mounted in the display apparatus, the electric field generated by the sensing device substrate is very likely to affect the display quality of the display apparatus. For example, the liquid crystal in the liquid crystal display apparatus may rotate due to the electric field generated by the sensing device substrate, which causes occurrence of light leakage. Therefore, there is a need for a method that can solve the aforementioned problems.

The present disclosure provides a sensing display apparatus capable of improving the problem that an electric field generated by a sensing device substrate affects display quality.

At least one embodiment of the disclosure provides a sensing display apparatus including a pixel array substrate, a sensing device substrate and a display medium layer. The sensing device substrate faces the pixel array substrate, and includes a first substrate, a sensing device, a first signal line, a second signal line, a third signal line, and a shielding layer. The sensing device is disposed on the first substrate. The first signal line, the second signal line, and the third signal line are disposed on the first substrate. The sensing device includes a first switching element, an electrically conductive layer, an electrode layer and a photo-sensitive layer. The first switching element is electrically connected to the first signal line and the second signal line. The electrically conductive layer is electrically connected to the third signal line. The electrode layer is electrically connected to the first switching element. The photo-sensitive layer is disposed between the electrode layer and the electrically conductive layer. The shielding layer is disposed between the first signal line and the pixel array substrate, between the second signal line and the pixel array substrate, and between the third signal line and the pixel array substrate. The sensing display apparatus has a plurality of light transmitting regions and a light shielding region surrounding the light transmitting regions. The sensing device, the first signal line, the second signal line and the third signal line are disposed in the light shielding region. The display medium layer is disposed between the pixel array substrate and the sensing device substrate.

At least one embodiment of the disclosure provides a sensing display apparatus including a pixel array substrate, a sensing device substrate and a display medium layer. The sensing device substrate faces the pixel array substrate. The display medium layer is disposed between the pixel array substrate and the sensing device substrate. The sensing device substrate includes a first substrate, a sensing device, a first signal line, a second signal line, a third signal line and a shielding layer. The sensing device is disposed on the first substrate. The first signal line, the second signal line and the third signal line are disposed on the first substrate. The sensing device includes a first switching element, an electrically conductive layer, an electrode layer and a photo-sensitive layer. The first switching element is electrically connected to the first signal line and the second signal line. The electrically conductive layer is electrically connected to the third signal line. The electrode layer is electrically connected to the first switching element. The photo-sensitive layer is disposed between the electrode layer and the electrically conductive layer. The shielding layer is disposed between the first signal line and the pixel array substrate, between the second signal line and the pixel array substrate and between the third signal line and the pixel array substrate.

Based on the above, the configuration of the shielding layer may improve the problem that the electric field generated by the sensing device substrate affects the display quality.

In order to make the aforementioned features and advantages of the disclosure more comprehensible, embodiments accompanying figures are described in detail below.

FIG. 1 is a cross-sectional view of a display apparatus according to an embodiment of the disclosure.

FIG. 2 is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure.

FIG. 3A is a schematic cross-sectional view of FIG. 2 taken along sectional line AA′.

FIG. 3B is a schematic cross-sectional view of FIG. 2 taken along sectional line BB′.

FIG. 3C is a schematic cross-sectional view of FIG. 2 taken along sectional line CC′.

FIG. 4A is a schematic top view of a pixel array substrate of a display apparatus according to an embodiment of the disclosure.

FIG. 4B is schematic side view of a second signal line and a data line according to an embodiment of the disclosure.

FIG. 5 is a schematic cross-sectional view of FIG. 4A taken along sectional line DD′.

FIG. 6 is a schematic cross-sectional view of a pixel array substrate of a display apparatus according to an embodiment of the disclosure.

FIG. 7 is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure.

FIG. 8 is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure.

FIG. 9 is a schematic cross-sectional view of FIG. 8 taken along sectional line EE′.

FIG. 10A is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure.

FIG. 10B is a circuit diagram of the sensing device substrate in FIG. 10A .

FIG. 11A is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure.

FIG. 11B is a schematic cross-sectional view of FIG. 11A taken along sectional line FF′.

FIG. 1 is a cross-sectional view of a display apparatus according to an embodiment of the disclosure. For simplicity of explanation, FIG. 1 omits some of the components of the sensing device substrate 10 and the pixel array substrate 20 . FIG. 2 is a schematic bottom view of a sensing device substrate 10 of a display apparatus according to an embodiment of the disclosure. For simplicity of explanation, FIG. 2 omits illustration of some of the components in the sensing device substrate 10 . FIG. 3A is a schematic cross-sectional view of FIG. 2 taken along sectional line AA′. FIG. 3B is a schematic cross-sectional view of FIG. 2 taken along sectional line BB′. FIG. 3C is a schematic cross-sectional view of FIG. 2 taken along sectional line CC′.

A sensing display apparatus 1 has a light transmitting region OR and a circuit region CR, and includes a sensing device substrate 10 , a pixel array substrate 20 , and a display medium layer LC. In some embodiments, the circuit region CR overlaps a black matrix (not shown), and the circuit region CR may also be referred to as a light-shielding region CR. In some embodiments, the black matrix is disposed in the sensing device substrate 10 . In other embodiments, the black matrix is disposed in the pixel array substrate 20 . The sensing device substrate 10 faces the pixel array substrate 20 . The display medium layer LC is disposed between the pixel array substrate 20 and the sensing device substrate 10 . In some embodiments, the display medium layer LC includes a negative liquid crystal, but the disclosure is not limited thereto.

Referring to FIG. 1 , FIG. 2 , FIG. 3A , FIG. 3B and FIG. 3C , the sensing device substrate 10 includes a first substrate SB 1 , a sensing device D, a first signal line L 1 , a second signal line L 2 , and a third signal line L 3 and a shielding layer SM.

The material of the first substrate SB 1 may be glass, quartz or an organic polymer or the like. The sensing device D is disposed on the first substrate SB 1 . The sensing device D, the first signal line L 1 , the second signal line L 2 , and the third signal line L 3 are disposed in the circuit region CR. The first signal line L 1 , the second signal line L 2 , and the third signal line L 3 are disposed on the first substrate SB 1 , and are electrically connected to the sensing device D.

The sensing device D includes a switching element T 1 , an electrically conductive layer C 1 , a photo-sensitive layer R, and an electrode layer C 2 . The switching element T 1 is electrically connected to the first signal line L 1 and the second signal line L 2 . The light shielding layer M 1 is disposed between the first substrate SB 1 and the switching element T 1 . The material of the light shielding layer M 1 includes, for example, metal, resin, graphite, or other suitable materials. The light shielding layer M 1 may improve the problem of light leakage generated by the switching element T 1 , for example. The insulating layer I 1 covers the light shielding layer M 1 and the first substrate SB 1 , and the light shielding layer M 1 is disposed between the insulating layer I 1 and the first substrate SB 1 .

In the embodiment, the switching element T 1 includes a gate G 1 , a source S 1 , a drain D 1 , and a semiconductor channel layer CH 1 . The gate G 1 overlaps the semiconductor channel layer CH 1 , and an insulating layer I 2 is interposed between the gate G 1 and the semiconductor channel layer CH 1 . The gate G 1 is electrically connected to the first signal line L 1 . In this embodiment, the gate G 1 , the first signal line L 1 and the third signal line L 3 belong to the same conductive film layer, but the disclosure is not limited thereto. The insulating layer I 3 is disposed on the insulating layer I 2 and covers the gate G 1 . The source S 1 and the drain D 1 are disposed above the insulating layer I 3 , and the source S 1 is electrically connected to the second signal line L 2 . In this embodiment, the source S 1 , the drain D 1 , and the second signal line L 2 belong to the same conductive film layer, but the disclosure is not limited thereto. The source S 1 and the drain D 1 are electrically connected to the semiconductor channel layer CH 1 through the openings H 1 and H 2 respectively, and the openings H 1 and H 2 are disposed, for example, in the insulating layer I 3 and the insulating layer I 2 . The above-described switching element T 1 is exemplified as a top gate type thin film transistor, but the disclosure is not limited thereto. According to other embodiments, the switching element T 1 described above may also be a bottom gate type thin film transistor or other suitable thin film transistors.

The insulating layer B covers the switching element T 1 . The electrically conductive layer C 1 is disposed on the insulating layer B 1 . The electrically conductive layer C 1 is electrically connected to the third signal line L 3 . For example, the electrically conductive layer C 1 is electrically connected to the third signal line L 3 through the opening O 1 , and the opening O 1 is disposed, for example, in the insulating layer B 1 and the insulating layer I 3 . The material of the electrically conductive layer C 1 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxide or a stacked layer of at least two of the above.

The photo-sensitive layer R covers the top surface C 1 t of the electrically conductive layer C 1 , the first side surface C 1 a of the electrically conductive layer C 1 , and the second side surface C 1 b of the electrically conductive layer C 1 . In this embodiment, the electrically conductive layer C 1 further has a third side surface C 1 c , the third side surface C 1 c connects the first side surface C 1 a and the second side surface C 1 b , and the photo-sensitive layer R covers the third side surface C 1 c of the electrically conductive layer C 1 . The material of the photo-sensitive layer R is, for example, a silicon-rich oxide (SRO) or other suitable material. In this embodiment, the shape of the photo-sensitive layer R vertically projected on the first substrate SB 1 is a rectangle, and the long side of the photo-sensitive layer R is parallel to the first signal line L 1 and the third signal line L 3 , but the disclosure is not limited thereto.

The electrode layer C 2 covers the photo-sensitive layer R. The photo-sensitive layer R is disposed between the electrode layer C 2 and the electrically conductive layer C 1 . The photo-sensitive layer R is disposed between the top surface C 1 t of the electrically conductive layer C 1 and the electrode layer C 2 . The electrode layer C 2 is farther from the first substrate SB 1 than the electrically conductive layer C 1 . The electrode layer C 2 is closer to the pixel array substrate 20 than the electrically conductive layer C 1 .

The electrode layer C 2 is electrically connected to the switching element T 1 . For example, the electrode layer C 2 is electrically connected to the switching element T 1 through the opening O 2 , and the opening O 2 is, for example, disposed in the insulating layer B 1 . The material of the electrode layer C 2 is, for example, molybdenum, aluminum, titanium, copper, gold, silver or other conductive material or a stack of two or more of the above. In some embodiments, the electrode layer C 2 may be used as a reflective layer, thereby increasing the light that can be received by the photo-sensitive layer R.

In some embodiments, the sensing device D may include two or more switching elements. For example, the sensing device D includes two switching elements electrically connected together and the electrically conductive layer C 1 , the photo-sensitive layer R and the electrode layer C 2 electrically connected to the switching elements.

In the embodiment, although the third signal line L 3 is electrically connected to the electrically conductive layer C 1 , the disclosure is not limited thereto. In other embodiments, other signal lines having the same extending direction as the first signal line L 1 may also be used as the signal lines electrically connected to the electrically conductive layer C 1 . In some embodiments, the sensing device D is electrically connected to three or more signal lines, and the manner in which the sensing device D is connected to the signal line is not limited to the configuration illustrated in FIG. 2 .

In this embodiment, the third signal line L 3 and the first signal line L 1 belong to the same conductive film layer, and the sensing device D is disposed between the third signal line L 3 and the first signal line L 1 , thereby improving the area of the light transmitting region OR.

The shielding layer SM is disposed between the first signal line L 1 and the pixel array substrate 20 , between the second signal line L 2 and the pixel array substrate 20 , and between the third signal line L 3 and the pixel array substrate 20 . In some embodiments, the shielding layer SM and the electrically conductive layer C 1 are the same conductive film layer. The shielding layer SM and the electrically conductive layer C 1 are electrically connected to different signal sources.

The problem that the electric field generated by the sensing device substrate 10 affects the liquid crystal molecules in the display medium layer LC is improved by the shielding layer SM, and the display quality of the display apparatus 1 may be improved.

Referring to FIG. 3B and FIG. 3C , in the embodiment, the width W 1 of the shielding layer SM extending from the circuit region CR into the light transmitting region OR is greater than or equal to 1.5 μm. For example, the shielding layer SM overlaps the first signal line L 1 , the second signal line L 2 and the third signal line L 3 , and extends toward the light transmitting region OR from the first signal line L 1 , the second signal line L 2 and the third signal line L 3 . The width W 2 of the shielding layer SM overlapping the first signal line L 1 and the third signal line L 3 is greater than or equal to 1.5 μm, and the width W 1 of the shielding layer SM overlapping the light transmitting region OR is greater than or equal to 1.5 μm. In this embodiment, a portion of the first signal line L 1 and a portion of the third signal line L 3 do not overlap the shielding layer SM. In an embodiment, the non-overlapping portion is disposed on a side closer to the electrically conductive layer C 1 . A portion of the first signal line L 1 not overlapping the shielding layer SM is closer to the electrically conductive layer C 1 than a portion of the first signal line L 1 overlapping the shielding layer SM. A portion of the third signal line L 3 not overlapping the shielding layer SM is closer to the electrically conductive layer C 1 than a portion of the third signal line L 3 overlapping the shielding layer SM. In other words, the vertical projection of the first signal line L 1 and the third signal line L 3 on the first substrate SB 1 is deviated from the vertical projection of the shielding layer SM on the first substrate SB 1 . Therefore, more adequate spacing may be provided between the shielding layer SM and the electrically conductive layer C 1 . In the embodiment, more than 50% of the area of the light transmitting region OR does not overlap the shielding layer SM. In the embodiment, at the sectional line BB′, the shielding layer SM completely overlaps the second signal line L 2 , and the width W 1 of the shielding layer SM overlapping the light transmitting region OR is greater than or equal to 1.5 μm, wherein the shielding layer SM overlaps the second signal line L 2 .

In the embodiment, the sensing device substrate 10 further includes a passivation layer B 2 . The passivation layer B 2 covers the electrically conductive layer C 1 , the electrode layer C 2 , the shielding layer SM and the insulating layer B 1 . The passivation layer B 2 is disposed, for example, between the electrode layer C 2 and the display medium layer LC (shown in FIG. 1 ).

FIG. 4A is a schematic top view of a pixel array substrate of a display apparatus according to an embodiment of the disclosure. For simplicity of explanation, FIG. 4A omits some components of the pixel array substrate 20 . FIG. 5 is a schematic cross-sectional view of FIG. 4A taken along sectional line DD′.

Referring to FIG. 1 , FIG. 4A and FIG. 5 , the pixel array substrate 20 includes a second substrate SB 2 , a thin film transistor array AR, a plurality of pixel electrodes PE, and a common electrode CE.

The thin film transistor array AR, the pixel electrode PE, and the common electrode CE are disposed on the second substrate SB 2 . The thin film transistor array AR includes a plurality of switching elements T 2 , a plurality of scan lines SL, and a plurality of data lines DL.

The switching element T 2 is, for example, disposed on the insulating layer I 1 ′. In some embodiments, a light shielding layer M 2 is interposed between the switching element T 2 and the second substrate SB 2 . The switching element T 2 includes a gate G 2 , a source S 2 , a drain D 2 , and a semiconductor channel layer CH 2 . The semiconductor channel layer CH 2 is disposed on the insulating layer I 1 ′. The gate G 2 overlaps the semiconductor channel layer CH 2 , and an insulating layer I 2 ′ is interposed between the gate G 2 and the semiconductor channel layer CH 2 . The gate G 2 is electrically connected to the scan line SL. In the embodiment, the gate G 2 and the scan line SL belong to the same conductive film layer, but the disclosure is not limited thereto. The insulating layer I 3 ′ is disposed on the insulating layer I 2 ′ and covers the gate G 2 and the scan line SL. The source S 2 and the drain D 2 are disposed above the insulating layer I 3 ′, and the source S 2 is electrically connected to the data line DL. In this embodiment, the source S 2 and the data line DL belong to the same conductive film layer, but the disclosure is not limited thereto. The source S 2 and the drain D 2 are electrically connected to the semiconductor channel layer CH 2 through the openings H 1 ′, H 2 ′ respectively, and the openings H 1 ′, H 2 ′ are disposed, for example, in the insulating layer I 3 ′ and the insulating layer I 2 ′. The insulating layer B 1 ′ is disposed above the source S 2 and the drain D 2 . The above-mentioned thin film transistor T 2 is exemplified as a top gate type thin film transistor, but the disclosure is not limited thereto. According to other embodiments, the thin film transistor T 2 described above may also be a bottom gate type thin film transistor.

Please refer to FIG. 4B , in the embodiment, the second signal line L 2 overlaps the data line DL in the direction (may also be referred to as the direction perpendicular to the second substrate SB 2 ) perpendicular to the first substrate SB 1 , thereby improving the aperture ratio of the sensing display apparatus 1 .

In the embodiment, the pixel array substrate 20 further includes a common electrode line CL. The common electrode line CL is disposed on the insulating layer B 1 ′. In the embodiment, the extending direction of the common electrode line CL is the same as the extending direction of the data line DL. In some embodiments, the common electrode line CL overlaps the data line DL in the direction (may also be referred to as the direction perpendicular to the second substrate SB 2 ) perpendicular to the first substrate SB 1 , thereby improving the aperture ratio of the sensing display apparatus 1 .

The insulating layer I 4 covers the common electrode line CL. The common electrode CE is disposed on the insulating layer I 4 , and is electrically connected to the common electrode line CL through the opening H 3 , and the opening H 3 is disposed in the insulating layer I 4 . In some embodiments, the common electrode CE includes a touch electrode. In some embodiments, the common electrode CE and the shielding layer SM on the first substrate SB 1 are electrically connected to the same signal source. It can also be that the same signal is applied to the common electrode CE and the shielding layer SM, thereby further improving the problem that the electric field generated by the sensing device substrate 20 affects the display quality.

The insulating layer I 5 is disposed on the common electrode CE. The pixel electrode PE is disposed on the insulating layer I 5 , the pixel electrode PE overlaps the common electrode CE, and the pixel electrode PE is separated from the common electrode CE. The pixel electrode PE is electrically connected to the drain D 2 of the thin film transistor T 2 through the opening O 3 . In the embodiment, the opening O 3 passes through the insulating layer B 1 ′, the insulating layer I 4 , the insulating layer I 5 , and the common electrode CE, but the disclosure is not limited thereto. In some embodiments, the pixel array substrate 20 may drive liquid crystals using Fringe Field Switching (FFS) technology or In-Plane-Switching (IPS) technology.

Referring to FIG. 1 , the display apparatus 1 may further include a backlight module BL. The backlight module BL is disposed under the pixel array substrate 20 , and it may be that the pixel array substrate 20 is disposed between the backlight module BL and the sensing device substrate 10 . When a finger F approaches the sensing device substrate 10 , the light LR emitted by the backlight module BL is reflected by the finger F to the photo-sensitive layer R.

FIG. 6 is a schematic cross-sectional view of a pixel array substrate of a display apparatus according to an embodiment of the disclosure. It is to be explained that, the embodiment of FIG. 6 has adopted component notations and part of the contents from the embodiment of FIG. 5 , wherein the same notations are used for representing the same or similar components, and descriptions of the same technical contents are omitted. The descriptions regarding the omitted part may be referred to the previous embodiments, and thus are not repeated herein.

Referring to FIG. 6 , in the embodiment, the common electrode line CL of the pixel array substrate 20 a is disposed on the insulating layer I 3 ′. In the embodiment, the common electrode line CL and the data line DL belong to the same conductive film layer, and the common electrode line CL and the data line DL extend in the same direction.

The insulating layer B 1 ′ covers the common electrode line CL, the data line DL, the source S 2 , and the drain D 2 . The common electrode CE is disposed on the insulating layer B 1 ′, and is electrically connected to the common electrode line CL through the opening H 3 , and the opening H 3 is disposed in the insulating layer B 1 ′.

By using the same process to form the common electrode line CL, the data line DL, the source S 2 , and the drain D 2 , the number of masks required in the manufacturing process may be saved.

FIG. 7 is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure. It is to be explained that, the embodiment of FIG. 7 has adopted component notations and part of the contents from the embodiments of FIG. 2 to FIG. 3C , wherein the same notations are used for representing the same or similar components, and descriptions of the same technical contents are omitted. The descriptions regarding the omitted part may be referred to the previous embodiments, and thus are not repeated herein.

Referring to FIG. 7 , in the embodiment, the shielding layer SM covers the entire light transmitting region OR. The problem that the electric field generated by the sensing device substrate 10 a affects the liquid crystal molecules in the display medium layer LC is improved by the shielding layer SM, and the display quality of the display apparatus 1 may be improved.

In this embodiment, the common electrode CE in the pixel array substrate corresponding to the sensing device substrate 10 a is not used as the touch electrode. Therefore, it is not necessary to take into consideration the problem that the touch function is affected due to that the shielding layer SM covers the entire light transmitting region OR.

FIG. 8 is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure. FIG. 9 is a schematic cross-sectional view of FIG. 8 taken along sectional line EE′. It is to be explained that, the embodiments of FIG. 8 and FIG. 9 have adopted component notations and part of the contents from the embodiments of FIG. 2 to FIG. 3C , wherein the same notations are used for representing the same or similar components, and descriptions of the same technical contents are omitted. The descriptions regarding the omitted part may be referred to the previous embodiments, and thus are not repeated herein.

Referring to FIG. 8 and FIG. 9 , in the embodiment, the photo-sensitive layer R is disposed between the top surface C t of the electrically conductive layer C 1 and the electrode layer C 2 , between the first side surface C 1 a of the electrically conductive layer C 1 and the electrode layer C 2 , and between the second side C 1 b of the electrically conductive layer C 1 and the electrode layer C 2 . In this embodiment, the photo-sensitive layer R is further disposed between the third side surface C 1 c of the electrically conductive layer C 1 and the electrode layer C 2 . The electrode layer C 2 is farther from the first substrate SB 1 than the electrically conductive layer C 1 . The electrode layer C 2 is closer to the pixel array substrate 20 than the electrically conductive layer C 1 .

In this embodiment, the side photosensitive area of the photo-sensitive layer R may be increased, thereby increasing the ratio of the photocurrent to the dark current when the sensing device substrate 10 b senses the object, and improving the problem that the sensing device substrate 10 b is insufficient in sensitivity.

FIG. 10A is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure. FIG. 10B is a circuit diagram of the sensing device substrate in FIG. 10A .

Referring to FIG. 10A and FIG. 10B , the sensing device D of the sensing device substrate 10 c includes the switching element T 1 , a switching element T 1 a , the electrically conductive layer C 1 , the photo-sensitive layer R, and the electrode layer C 2 .

The switching element T 1 a includes a gate G 1 a , a source S 1 a , a drain D 1 a , and a semiconductor channel layer CH 1 a . In the embodiment, a light shielding layer M 1 a is further included between the switching element T 1 a and the first substrate SB 1 , but the disclosure is not limited thereto.

The gate G 1 a overlaps the semiconductor channel layer CH 1 a . The gate G 1 a is electrically connected to the switching element T 1 and the electrode layer C 2 . For example, the drain D 1 of the switching element T 1 is electrically connected to the gate G 1 a through the opening H 4 , and the electrode layer C 2 is electrically connected to the gate G 1 a through the drain D 1 . In this embodiment, the gate G 1 a , the first signal line L 1 and the third signal line L 3 belong to the same conductive film layer, but the disclosure is not limited thereto. The source S 1 a is electrically connected to the fourth signal line L 4 . In some embodiments, the second signal line L 2 is electrically connected to the signal VSS, and the fourth signal line L 4 is electrically connected to the signal VDD. The drain D 1 a is electrically connected to the fifth signal line L 5 . In this embodiment, the source S 1 a , the drain D 1 a , the second signal line L 2 , the fourth signal line L 4 , and the fifth signal line L 5 belong to the same conductive film layer, but the disclosure is not limited thereto. The source S 1 a and the drain D 1 a are electrically connected to the semiconductor channel layer CH 1 a through the openings H 1 a and H 2 a respectively, and such design allows the signal to be improved. The above-described switching element T 1 a is exemplified as a top gate type thin film transistor, but the disclosure is not limited thereto. According to other embodiments, the above-mentioned switching element T 1 a may also be a bottom gate type thin film transistor or other suitable thin film transistors.

In this embodiment, a portion of the shielding layer SM extends toward the position of the switching element T 1 a , which further improves the problem that the electric field generated by the sensing device substrate 10 c affects the liquid crystal molecules in the display medium layer LC.

FIG. 11A is a schematic bottom view of a sensing device substrate of a display apparatus according to an embodiment of the disclosure. FIG. 11B is a schematic cross-sectional view of FIG. 11A taken along sectional line FF′. It should be noted that the embodiments of FIG. 11A and FIG. 11B adopt the reference numerals and some content mentioned in the embodiments of FIG. 2 - FIG. 3C , wherein the same or similar elements are denoted by the same or similar reference numerals, and the same technical content is omitted. The omitted content may be derived from the above embodiments and thus not repeated herein.

Referring to FIG. 11A and FIG. 11B , in the embodiment, the electrically conductive layer C 1 of the sensing device substrate 10 d is closer to the pixel array substrate than the electrode layer C 2 .

In the embodiment, the electrode layer C 2 is electrically connected to the switching element T 1 . The material of the electrode layer C 2 is preferably a transparent conductive material such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxide or a stacked layer of at least two of the above. In the embodiment, the shielding layer SM and the electrode layer C 2 are the same conductive film layer.

The material of the electrically conductive layer C 1 is, for example, a stack of molybdenum, aluminum, titanium, copper, gold, silver or other conductive material or a combination of two or more of the above. In some embodiments, the electrode layer C 1 may be used as a reflective layer, thereby increasing the light that can be received by the photo-sensitive layer R.

It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed embodiments without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the disclosure covers modifications and variations provided that they fall within the scope of the following claims and their equivalents.