Memory device

This application claims the priority benefit of Chinese Application serial no. 201811582708.7, filed Dec. 24, 2018, the full disclosure of which is incorporated herein by reference.

The present disclosure relates to a memory device. More particularly, the present disclosure relates to a phase change memory device.

In memory technology, a resistive random-access memory includes a phase change memory (PCM), which can change a resistance value of a component by a crystal phase change of the material thereof, so as to store information by a change in resistance value. When the material in the memory element is crystalline, it exhibits a low resistance value, and conversely, when the material in the memory element is in an amorphous state, it exhibits a high resistance value, thereby storing data such as “1” or “0”.

In the prior art, when reading the data of the memory unit in the memory device, the single memory unit is turned on, and the current corresponding to the single memory unit is compared with the reference current to determine whether a single data stored in the memory unit is “1” or “0”. However, comparisons with current values may cause errors due to different bias voltages. Furthermore, the judgment of data reading with a single memory unit is liable to cause errors.

For details, reference is made to FIG. 1 . In the prior art, a row decoding circuit (row decoder) and a column decoding circuit (column decoder) are located at a periphery of a cell array, and a read/write circuit (R/W circuit), which includes the sense amplifier circuit (sense amplifier) for reading the bit data, is located at a periphery of a column decoding circuit. When reading the resistive random-access memory component, the currents of the memory element and the reference current are compared by the sense amplifier circuit to determine whether the information of the memory element is “1” or “0”. Existing memory architectures include at least two major problems: (1) the reference circuit is located in the read/write circuit, in which typically a transistor is configured to generate a reference current. The position difference between the location of the transistor and the location of the memory cell is too large, and the magnitude of the currents generated at different positions of different memory cells are slightly different, which causes different noise margins for determining logic “1” or “0” of each cell and makes the optimization of memory performance be unreachable. Furthermore, the reference current is generated by the transistor, but the current of the resistive random-access memory cell is determined by the effective resistance of the memory cell. The process variation mechanism of the memory cell is different from that of the transistor, so the reference current cannot accurately adapt to the variation of the memory cell. (2) In the prior art, since the read/write circuit is located at the periphery of the column decoding circuit, when reading the memory unit, due to the loading effect of the bit line, the reading speed of the memory unit farthest from the reading circuit is the slowest. Therefore, the speed of the entire memory is decided by the slowest memory unit.

An aspect of the present disclosure is to provide a memory device. The memory device includes a memory array, a bit line driving circuit, a word line driving circuit, a read/write circuit, a controller, and a reference driving circuit. The memory array includes several memory units. The bit line driving circuit is configured to interpret a memory bit address and to drive a bit line. The word line driving circuit is configured to interpret a memory word address and to drive a word line. The read/write circuit is configured to read, write, or reset the memory units. The controller is configured to switch the memory array to work in a single memory unit mode or a dual memory unit mode. The reference driving circuit is configured to drive a reference line, wherein the reference line comprises several reference units, and the reference line and the reference units are located in the memory array.

Another aspect of the present disclosure is to provide a memory device. A memory device includes a memory array, a bit line driving circuit, and a word line driving circuit. The memory array includes a plurality of first bit lines, a plurality of second bit lines, a plurality of word lines, and a plurality of memory unit groups. The first bit lines and the second bit lines are aligned sequentially. Each of the plurality of memory unit groups couples to one of the word lines, wherein each of the memory unit groups includes a first memory unit and a second memory unit. The first memory unit is coupled to one of the first bit lines. The second memory unit is coupled to one of the second bit lines. The bit line driving circuit includes a first decoding circuit, a second decoding circuit, and a read/write circuit. The first decoding circuit is coupled to the first bit lines. The second decoding circuit is coupled to the second bit lines. The read/write circuit is coupled to the first decoding circuit and the second decoding circuit, and the read/write circuit is configured to read or write the memory units. The word line driving circuit is coupled to the word lines.

In sum, embodiments of this disclosure are to provide a memory device, and in particular, a phase change memory device. After the chip is completed, the user is still able to adopt single memory unit mode or dual memory unit mode according to his own needs. When the memory is operated in the single memory unit mode, the memory may obtain the maximum design capacity; in addition, since the reference current is generated by using the reference resistor, and the reference resistor is formed by the same material and process of the resistive random-access element, therefore, the process variation mechanism of the reference resistor is the same as that of the resistive random-access element of the memory unit. Therefore, the resistance variation of the resistive random-access element may be almost the same as the variation of the process, which results in more reading accuracy than the prior art. When operating in the dual memory unit mode, the data stored in the dual memory unit is read to determine whether the data stored in the memory unit is “1” or “0” so as to increase the accuracy of the data of the memory unit. The dual memory operation mode eliminates the loading effect of the memory unit, thus improving the reading speed of the memory.

The present disclosure can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:

FIG. 1 is a current technology.

FIG. 2 is a schematic diagram of a memory device according to some embodiments of the present disclosure.

FIG. 3 is a schematic diagram of a read/write circuit in accordance with some embodiments of the present disclosure.

FIG. 4 is a reference unit in accordance with some embodiments of the present disclosure.

FIG. 5 is a memory unit in accordance with some embodiments of the present disclosure.

In order to make the description of the disclosure more detailed and comprehensive, reference will now be made in detail to the accompanying drawings and the following embodiments. However, the provided embodiments are not used to limit the ranges covered by the present disclosure; orders of step description are not used to limit the execution sequence either. Any devices with equivalent effect through rearrangement are also covered by the present disclosure.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” or “includes” and/or “including” or “has” and/or “having” when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof.

In this document, the term “coupled” may also be termed as “electrically coupled,” and the term “connected” may be termed as “electrically connected.” “Coupled” and “connected” may also be used to indicate that two or more elements cooperate or interact with each other.

Reference is made to FIG. 2 . FIG. 2 is a schematic diagram of a memory device 100 according to some embodiments of the present disclosure. Take phase change memory (PCM) as an example, as illustrated in FIG. 2 , the memory device 100 includes a memory array 110 , the bit line driving circuit 130 , the word line driving circuit 150 , the read/write circuit 136 , and the controller 170 . The memory array 110 includes several word lines WL 1 to WLN and several bit lines BLA 1 , BLA 2 , BLB 1 , BLB 2 to BLAM, BLBM. The bit line driving circuit 130 is configured to decode the read and/or write address inputted to the memory and to drive one of the bit lines. The word line driving circuit 150 is configured to decode the read and/or write address inputted to the memory and drive one of the word lines. The controller 170 control the read/write circuit 136 and is configured to distinguish the bit address from the word address of a set of read/write address which is inputted to the controller, and the read/write circuit The memory array 110 includes several memory units MA 11 to MANM, MB 11 to MBNM. The bit line driving circuit 130 includes the first decoding circuit 132 A and the second decoding circuit 132 B.

In the connection configuration, the controller 170 is coupled to the bit line driving circuit 130 and the word line driving circuit 150 . The word line driving circuit 150 is coupled to several word lines WL 1 to WLN. The bit line driving circuit 130 is coupled to several bit lines BLA 1 to BLAM, BLB 1 to BLBM. Furthermore, the read/write circuit 136 is coupled to the first decoding circuit 132 A and the second decoding circuit 132 B.

In details, the memory units MA 1 to MANM are first memory units, and the memory units MB 11 to MBNM are the second memory units. The bit lines BLA 1 to BLAM are the first bit lines, and the bit lines BLB 1 to BLBM are the second bit lines. The first bit lines BLA 1 to BLAM and the second bit lines BLB 1 to BLBM are arranged in order. For example, as illustrated in FIG. 2 , the arranged order of the bit lines is the first bit line BLA 1 , the second bit line BLB 1 , the bit line BLA 2 , the second bit line BLB 2 , and so on.

Each of the first memory units MA 11 to MANM couples to one of the first bit lines BLA 1 to BLAM. To be more detailed, the memory units MA 11 to MAN 1 couple to the bit line BLA 1 , the memory units MA 12 to MAN 2 couple to the bit line BLA 2 , the memory units MA 13 to MAN 3 couple to the bit line BLA 3 , and so on, and the first bit lines BLA 1 to BLAM couple to the first decoding circuit 132 A. On the other hand, each of the second memory units MB 11 to MBNM couples to one of the second bit lines BLB 1 to BLBM. To be more detailed, memory units MB 11 to MBN 1 couple to the bit line BLB 1 , memory units MB 12 to MBN 2 couple to the bit line BLB 2 , memory units MB 13 to MBN 3 couple to the bit line BLB 3 , and so on, and the second bit lines BLB 1 to BLBM couple to the second decoding circuit 132 B. Each of the first memory units MA 11 to MANM and the second memory units MB 11 to MBNM couples to one of the word lines WL 1 to WLN. To be more detailed, memory units from MA 11 and MB 11 to MA 1 M and MB 1 M are coupled to the word line WL 1 , memory units from MA 21 and MB 21 to MA 2 M and MB 2 M are coupled to the word line WL 2 , memory units from MAN 1 and MBN 1 to MANM and MBNM are coupled to word line WLN.

For example, the first memory unit MA 11 is coupled to the word line WL 1 and the first bit line BLA 1 , the first bit line BLA 1 is further coupled to the first decoding circuit 132 A, and so on. The second memory unit MB 11 is coupled to the word line WL 1 and the second bit line BLB 1 , the second bit line BLB 1 is further coupled to the second decoding circuit 132 B, and so on.

The several memory units MA 11 to MANM, MB 11 to MBNM include several memory unit groups MG 11 to MGNM. Each of the memory unit groups MG 11 to MGNM includes one of the first memory units MA 11 to MANM and one of the second memory units MB 11 to MBNM. For example, the memory unit group MG 11 includes the first memory unit MA 11 and the second memory unit MB 11 , and the memory unit group MG 21 includes the first memory unit MA 21 and the second memory unit MB 21 , and so on. The first memory unit and the second memory unit in the same memory unit group are adjacent to each other. For example, the first memory unit MA 11 and the second memory unit MB 11 of the memory unit group MG 11 are adjacent to each other, and the first memory unit MA 12 and the second memory unit MB 12 of the memory unit group MG 12 are adjacent to each other, and so on.

In the operation configuration, the read/write circuit 136 is configured to read or write information to the memory units MA 11 to MANM, MB 11 to MBNM. Every one of the memory units MA 11 to MANM, MB 11 to MBNM includes a memory layer (not shown). The memory layer is made of specific material, in which the specific material may change its internal status based on external operating conditions (for example: crystalline, amorphous, magnetic field, etc.) and includes different electrical properties. Thus, according to different electrical properties (for example: resistance, magnetoresistance, etc.) presented by the memory layer, memory units MA 11 to MANM, MB 11 to MBNM store different data equivalently. For example, in some embodiments, the memory units MA 11 to MANM, MB 11 to MBNM may be phase change random access memory units, and the memory layer may be implemented by a material such as a chalcogenide, but the embodiments of the present disclosure are not limited thereto. At different operating temperatures, the memory layer has different crystalline states to store different data equivalently.

The above-mentioned memory units MA 11 to MANM, MB 11 to MBNM, and the implementation materials thereof are merely examples. Other forms of memory that can be used to implement memory units MA 11 to MANM, MB 11 to MBNM, for example, variable resistance random access memory (ReRAM), magneto resistive random access memory (MRAM), etc., are within the scope of the embodiments of the present disclosure.

The number of bit lines BLA 1 to BLAM, BLB 1 to BLBM, word lines WL 1 to WLN, and memory units MA 11 to MANM, MB 11 to MBNM in FIG. 2 mentioned above are for illustrative purposes only, and the embodiments of the present disclosure are not limited thereto.

For ease of explanation, the following paragraphs are explained by implementing the memory units MA 11 to MANM and MB 11 to MBNM by phase change memory units, but as described above, the memory units MA 11 to MANM and MB 11 to MBNM of the present disclosure are for illustrative purposes only, and the embodiments of the present disclosure are not limited thereto.

In some embodiments, in the case of phase change memory, when reading memory units MA 11 to MANM, MB 11 to MBNM, a read pulse can be applied to the memory units MA 11 to MANM, MB 11 to MBNM, and the current value of the memory units MA 11 to MANM, MB 11 to MBNM are distinguished so as to identify whether the stored data is data “1” or data “0”.

Furthermore, if a reset pulse is applied to the memory units MA 11 to MANM, MB 11 to MBNM, the operating voltage of the memory units MA 11 to MANM, MB 11 to MBNM may increase rapidly, and the temperature of the phase change materials of the memory units MA 11 to MANM, MB 11 to MBNM rises to the molten state accordingly. And then the operating voltage is rapidly dropped, so that the phase change materials of the memory units MA 11 to MANM, MB 11 to MBNM become amorphous states. Under the condition, the memory units MA 11 to MANM, MB 11 to MBNM are of high resistance values.

On the other hand, if a set pulse is applied to the memory units MA 11 to MANM and MB 11 to MBNM, and because of the voltage soaring of the set pulse, the operating temperature of the memory layer of the memory units MA 11 to MANM and MB 11 to MBNM exceeds a specific temperature within a certain period of time. Under those conditions, the component state of the memory layer transforms into crystalline state. Therefore, the memory units MA 11 to MANM and MB 11 to MBNM are of low resistance values.

In some embodiments, the data corresponding to the high resistance value is logic “1”, and the data corresponding to the low resistance value is logic “0”. In some other embodiments, the data corresponding to the high resistance value is logic “0”, and the data corresponding to the low resistance value is logic “1”.

Reference is made to FIG. 2 again. In some embodiments, each of the memory unit groups MG 11 to MGNM represents a memory data. When the read/write circuit 136 reads the data stored in each of the memory unit groups MG 11 to MGNM, the read/write circuit 136 determines the data stored in the memory unit groups MG 11 to MGNM according to the first memory unit and the second memory unit of each memory unit groups MG 11 to MGNM.

For example, the read/write circuit 136 determines the data stored in the memory unit group MG 11 according to the first memory unit MA 11 and the second memory unit MB 11 of the memory unit group MG 11 . The read/write circuit 136 determines the data stored in the memory unit group MG 12 according to the first memory unit MA 12 and the second memory unit MB 12 of the memory unit group MG 12 , and so on.

In some embodiments, the data stored in the first memory unit and the data stored in the second memory unit of each of the memory unit groups MG 11 to MGNM are complementary to each other, which is configured to represent a memory data. When the resistance value of the first memory unit corresponds to the data of 1, and the resistance value of the second memory unit corresponds to the data of 0, the read write/circuit 136 determines that the memory data of the one of the memory unit groups MG 11 to MGNM is 1. When the resistance value of the first memory unit corresponds to the data of 0, the resistance value of the second memory unit corresponds to the data of 1; the read write/circuit 136 determines that the memory data of the one of the memory unit groups MG 11 to MGNM is 0.

For example, when the resistance value of the first memory unit MA 11 corresponds to the data of 1, and the resistance value of the second memory unit MB 11 corresponds to the data of 0, the read/write circuit 136 determines that the memory data of the memory unit group MG 11 is 1. On the contrary, when the resistance value of the first memory unit MA 11 corresponds to the data of 0, and the resistance value of the second memory unit MB11 corresponds to the data of 1, the read/write circuit 136 determines that the memory data of the memory unit group MG 11 is 0.

In some embodiments, when reading the data of the memory unit groups MG 11 to MGNM, the first decoding circuit 132 A reads the data of the first memory unit, and the second decoding circuit 132 B reads the data of the second memory unit, and then the read write/circuit 136 determines the memory data of one of the memory unit groups MG 11 to MGNM according to the data read by the first decoding circuit 132 A and the second decoding circuit 132 B. Next, the first decoding circuit 132 A and the second decoding circuit 132 B respectively transmit the read data to the read write/circuit 136 , so as to let the read/write circuit 136 determine the data stored in one of the memory unit groups MG 11 to MGNM.

In the embodiments of the present disclosure, as described above, the memory device 100 may be operated in a single memory unit mode or in a dual memory unit mode. The dual memory unit mode refers to the mode of operation in which a data unit is stored in two memory units, as described in the previous paragraph. On the other hand, the single memory unit mode refers to an operation mode in which a data is stored in a single memory unit, which will be described in the following paragraphs.

Reference is made to FIG. 2 . In some embodiments, the memory array 110 further includes a reference line 115 . The reference line 115 includes several reference units RU 1 , RU 2 to RUM. In the connection relationship, each of the reference units RU 1 , RU 2 to RUM couples to the first decoding circuit 132 A and the second decoding circuit 132 B. As illustrated in the figure, the reference line is located at the top of the memory array, which is for illustrative purposes only, in some other embodiments, the reference line may be located at any place of the memory array, for example, located at the bottom or the middle of the memory array.

In some embodiments, when the memory device 100 is operated in the single memory unit mode, each of the memory units MA 11 to MANM, MB 11 to MBNM represents a data. When the read/write circuit 136 reads the data of one of the second memory units MB 11 to MBNM, the first decoding circuit 132 A reads the reference data of one of the reference units RU 1 to RUM, and the second decoding circuit 132 B reads the data of one of the second memory units MB 11 to MBNM. Next, the first decoding circuit 132 A and the second decoding circuit 132 B respectively transmit the read data to the read/write circuit 136 . And then, according to the reference data of one of the reference units RU 1 to RUM and the data of the one of the second memory units MB 11 to MBNM, the read/write circuit 136 determines the data of the one of the second memory units MB 11 to MBNM.

Similarly, when the read/write circuit 136 reads a data of one of the first memory units MA 11 to MANM, the first decoding circuit 132 A reads a data of one of the first memory units MA 11 to MANM, and the second decoding circuit 132 B reads the reference data of one of the reference units RU 1 to RUM. Next, the first decoding circuit 132 A and the second decoding circuit 132 B respectively transmit the read data to the read/write circuit 136 . And then, according to the reference data of one of the reference units RU 1 to RUM and the data of the one of the second memory units MA 11 to MANM, the read/write circuit 136 determines the data of the one of the second memory units MA 11 to MANM.

For example, when the read/write circuit 136 reads the data of the first memory unit MA 11 , the first decoding circuit 132 A reads the data of the first memory unit MA 11 , and the second decoding circuit 132 B reads the reference data of the reference unit RU 1 . The read/write circuit 136 determines the data of the first memory unit MA 11 depending on the reference data of the reference unit RU 1 and the data of the first memory unit MA 11 .

On the other hand, when the read/write circuit 136 reads the data of the second memory unit MB 11 , the second decoding circuit 132 B reads the data of the second memory unit MB 11 , and the first decoding circuit 132 A reads the reference data of the reference unit RU 1 . The read/write circuit 136 determines the data of the second memory unit MB 11 according to the reference data of the reference unit RU 1 and the data of the second memory unit MB 11 .

In some embodiments, the first decoding circuit 132 A and the second decoding circuit 132 B respectively include several switches (not shown). When the memory device 100 is operated in single memory unit mode, the switches control the first decoding circuit 132 A to read the data of one of the bit lines BLA 1 to BLAM and control the second decoding circuit 132 B to read the reference data of one of the reference units RU 1 to RUM. Or, the switches control the first decoding circuit 132 A to read the reference data of one of the reference units RU 1 to RUM and control the second decoding circuit 132 B to read the data of one of the bit lines BLB 1 to BLBM. On the other hand, when the memory device 100 is operated in the dual memory unit mode, the switches control the first decoding circuit 132 A to read the data of one of the bit lines BLA 1 to BLAM and control the second decoding circuit 132 B to read the data of one of the bit lines BLB 1 to BLBM.

Reference is made to FIG. 2 again. In some embodiments, the memory device 100 further includes the reference driving circuit 152 , which is coupled to the reference line 115 and is configured to drive the reference line 115 . In some embodiments, the memory device 100 further includes the controller 170 , which is coupled to the bit line driving circuit 150 and the word line driving circuit 130 , and the memory device 100 is configured to control the bit line driving circuit 150 and the word line driving circuit 130 .

Reference is made to FIG. 3 . FIG. 3 is a schematic diagram of a read/write circuit 136 in accordance with some embodiments of the present disclosure. As illustrated in FIG. 3 , the read/write circuit 136 includes a sense amplifier circuit 137 and a write-in driver 139 .

The sense amplifier circuit 137 is coupled to the first decoding circuit 132 A and the second decoding circuit 132 B as illustrated in FIG. 2 . The sense amplifier circuit 137 is configured to determine the memory data according to the data transmitted from the first decoding circuit 132 A and the second decoding circuit 132 B. To be more detailed, the first input terminal of the sense amplifier circuit 137 is configured to receive the data transmitted from the first decoding circuit 132 A, the second input terminal of the sense amplifier circuit 137 is configured to receive the data transmitted from the second decoding circuit 132 B, and the output terminal of the sense amplifier circuit 137 is configured to output the output data DOUT after determination.

The write-in driver 139 is coupled to the first decoding circuit 132 A and the second decoding circuit 132 B. In the operational, the write-in driver 139 receives the write-in data DWRITE, and, through the first decoding circuit 132 A and/or the second decoding circuit 132 B, write the write-in data DWRITE to the memory units MA 11 to MANM, MBAA to MBNM.

To be more detailed, when the memory device 100 is operated in the dual memory unit mode, the write-in driver 139 writes data into the first memory units MA 11 to MANM through the first decoding circuit 132 A and writes data to the second memory unit MBAA to MBNM through the second decoding circuit 132 B. The data written into the first memory units and the second memory units of the same memory units MG 11 to MGNM are complementary to each other. For example, the data written into the first memory unit MA 11 and the data written into the second memory unit MB 11 are complementary to each other. That is, when the data written into the first memory unit MA 11 is 0, the data written into the second memory unit MB 11 is 1. On the contrary, when the data written into the first memory unit MA 11 is 1, the data write in to the second memory unit MB 11 is 0.

It should be noted that, the comparison unit 137 determines the memory data according to the received current, voltage, or the resistance value.

Reference is made to FIG. 4 . FIG. 4 is a reference unit RU in accordance with some embodiments of the present disclosure. The reference unit RU as illustrated in FIG. 4 may represents the reference units RU 1 to RUM as illustrated in FIG. 2 .

The reference unit RU includes the resistor R 1 and the switch S 1 . The resistor R 1 may be the resistor formed by the set operation or the reset operation of the memory layer in the reference units RU 1 to RUM. The control terminal of the switch S 1 is coupled to the reference word line RWL as illustrated in FIG. 2 . The first terminal of the switch S 1 is connected to ground, the second terminal of the switch S 1 is coupled to the first terminal of the resistor R 1 , and the second terminal of the resistor R 1 is coupled to the reference bit line RBL. The reference bit line RBL may represent the reference bit line RBL 1 as illustrated in FIG. 4 .

Reference is made to FIG. 5 . FIG. 5 is a memory unit in accordance with some embodiments of the present disclosure. The memory unit M as illustrated in FIG. 5 may represent the memory units MA 11 to MANM or the MB 11 to MBNM as illustrated in FIG. 2 .

The memory unit M includes a resistor R 2 and a switch S 2 . The resistor R 2 may represent the resistor formed after the set operation or the reset operation of the memory layer in the memory units MA 11 to MANM or MB 11 to MBNM. The control terminal of the switch S 2 is coupled to the word line WL. The first terminal of the switch S 2 is connected to ground, the second terminal of the switch S 2 is coupled to the first terminal of the resistor R 2 , and the second terminal of the resistor R 2 is coupled to the bit line BL. The word line WL may represent the word lines WL 1 to WLN in FIG. 2 . The bit line BL may represent the bit lines BLA 1 to BLAM, BLB 1 to BLBM in FIG. 2 .

Based on the aforementioned embodiments, the present disclosure provides a memory device, and in particular, a phase change memory device. By reading the data of the dual memory unit to determine whether the data stored in the memory unit is “1” or “0”, the accuracy of determining the data of the memory unit is increased. Furthermore, in the embodiments of the present disclosure, the memory may be adjusted to the single memory operation mode as needed to increase the capacity of the memory device. Namely, the user may adopt single memory unit mode or dual memory unit mode according to his own needs.

Although the present disclosure has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.

In addition, the above illustrations comprise sequential demonstration operations, but the operations need not be performed in the order shown. The execution of the operations in a different order is within the scope of this disclosure. In the spirit and scope of the embodiments of the present disclosure, the operations may be increased, substituted, changed and/or omitted as the case may be.

It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present disclosure without departing from the scope or spirit of the present disclosure. In view of the foregoing, it is intended that the present disclosure cover modifications and variations of the present disclosure provided they fall within the scope of the following claims.