Distance measuring apparatus and method of operating the same

This application is a continuation of and claims priority to PCT/KR2017/008593 filed on Aug. 9, 2017, which claims priority to Korea Patent Application No. 10-2016-0114037 filed on Sep. 5, 2016, the entireties of which are both hereby incorporated by reference.

The present disclosure relates to semiconductor devices and, more particularly, to a distance measuring apparatus and a method of operating the same.

Various types of distance measuring apparatus have been used to measure a distance from a target object. For example, some of the distance measuring apparatuses may capture a target object with multiple pixels and measure a distance depending on an angular difference of the target object viewed from multiple pixels. Other distance measuring apparatus may irradiate a light to a target object and measure a distance to the target object using a time of flight (ToF) that the light is reflected and returns from the target object.

One of the important elements for a distance measuring apparatus is reliability. A high-reliability distance measuring apparatus may measure a distance with a relatively small error. On the other hand, a low-reliability distance measuring apparatus measures the distance with a relatively great error. To be useful in real life or industry, there is an increasing demand for research and development of a distance measuring apparatus having improved reliability.

Example embodiments of the present disclosure provide a distance measuring apparatus having improved reliability and a method of operating the same.

A distance measuring apparatus according to an example embodiment of the present disclosure includes an image sensor and an image sensor driver. The image sensor includes a photodiode, a first capacitor and a second capacitor, and a first transfer gate and a second transfer gate configured to transmit an output of the photodiode to the respective first and second capacitors. The image sensor driver is configured to complementarily drive the first transfer gate and the second transfer gate.

A method of operating a distance measuring apparatus according to an example embodiment of the present disclosure includes charging the first and second capacitors connected to a photodiode through first and second transfer gates, respectively, irradiating a light to a target object, decreasing a voltage of the first capacitor in proportion to the intensity of a light incident on the photodiode and in proportion to a time elapsed after the light is irradiated, decreasing a voltage of the second capacitor in proportion to the intensity of the light incident on the photodiode and in inverse proportion to the time elapsed after the light is irradiated, and measuring a distance between the target object and the distance measuring apparatus using the voltage of the first capacitor and the voltage of the second capacitor.

The present disclosure will become more apparent in view of the attached drawings and accompanying detailed description. The embodiments depicted therein are provided by way of example, not by way of limitation, wherein like reference numerals refer to the same or similar elements. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating aspects of the present disclosure.

FIG. 1 is a block diagram of a distance measuring apparatus according to an example embodiment of the present disclosure.

FIG. 2 is a circuit diagram illustrating an example of an image sensor in FIG. 1 .

FIG. 3 illustrates an example of a vertical cross-sectional view of first and second transfer gates and a photodiode in FIG. 2 .

FIG. 4 illustrates examples of voltages supplied to the image sensor in FIGS. 2 and 3 and voltages generated by the image sensor.

FIG. 5 illustrates examples of first and second gate voltages corresponding to a single duty time.

FIG. 6 illustrates a result of a simulation in which voltages of first and second detection nodes and first and second output voltages are measured by adjusting incident times of a second light when a duty time is 1 microsecond, and illustrates that outputs formed by lights incident at different times change in opposite directions in which the outputs increase or decrease at first and second output voltages.

FIG. 7 illustrates an example in which a difference between a first output voltage and a second output voltage varies depending on a time of flight.

FIG. 8 is a flowchart illustrating an example in which a distance measuring apparatus according to an example embodiment of the present disclosure measures a distance.

Example embodiments of the present disclosure will now be described below more fully with reference to accompanying drawings. The present disclosure may, however, be embodied in different forms and should not be constructed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

Reference numerals are indicated in detail in example embodiments of the present disclosure, and their examples are represented in reference drawings. In every possible case, like reference numerals are used for referring to the same or similar elements in the description and drawings.

FIG. 1 is a block diagram of a distance measuring apparatus 100 according to an example embodiment of the present disclosure. Referring to FIG. 1 , the distance measuring apparatus 100 includes a light source 110 , a light source driver 120 , an image sensor 130 , an image sensor driver 140 , and a controller 150 .

The light source 110 may irradiate a first light L 1 under the control of the light source driver 120 . For example, the light source 110 may irradiate a pulse-shaped first light L 1 to a target object 10 in response to a pulse signal PUL received from the light source driver 120 . For example, the light source 110 may be a pulsed laser light source.

The light source driver 120 may control the light source 110 under the control of the controller 150 . For example, the light source driver 120 receives a command, notifying a start of distance measurement, from the controller 150 and outputs the pulse signal PUL to the light source 110 when a predetermined time has elapsed since the command was received. As another example, the light source driver 120 may receive a command, requesting the controller 150 to output the pulse signal PUL, and may output the pulse signal PUL to the light source 110 according to the received command.

The image sensor 130 may operate under the control of the image sensor driver 140 . For example, the image sensor 130 may be reset in response to reset signals RST received from the image sensor driver 140 . Resetting the image sensor 130 may mean that previously collected information is discarded in the image sensor 130 and a preparation is performed to collect new information. The image sensor 130 may generate information on externally received light in response to a gate voltage VG received from the image sensor driver 140 . For example, the image sensor 130 may generate information on the intensity of a second light L 2 reflected from the target object 10 or information on the second light L 2 and an ambient light. The image sensor 130 may output the collected information to the image sensor driver 140 in response to selected signals SEL received from the image sensor driver 140 . For example, the collected information may be transmitted to output voltages VOUT.

The image sensor driver 140 may control the image sensor 130 under the control of the controller 150 . For example, the image sensor driver 140 may receive a command, notifying a start of distance measurement, from the controller 150 and may output reset signals RST, gate voltages VG, and selected signals SEL to the image sensor 130 when predetermined times have elapsed since the command was received. As another example, the image sensor driver 140 may receive commands, requesting the controller 150 to output reset signals RST, gate voltages VG, and selected signals SEL, from the controller 150 and may output the reset signals RST, the gate voltages VG, and the selected signals SEL to the image sensor 130 according to the received commands. The image sensor driver 140 may deliver the output voltages VOUT, received from the image sensor 130 , to the controller 150 .

The controller 150 may control the light source driver 120 and the image sensor driver 140 to perform the distance measurement. The controller 150 may receive the output voltages VOUT from the image sensor driver 140 and calculate a distance between the distance measuring apparatus 100 and the target object 10 from the output voltages VOUT. The controller 150 may display the calculated distance on a display unit such as a liquid crystal display (LCD) or may deliver the calculated distance to another device through a wired or wireless interface.

In FIG. 1 , the image sensor driver 140 has been described as delivering the output voltages VOUT to the controller 150 . However, the image sensor driver 140 may be applied to calculate distances from the output voltages VOUT and to deliver the calculated distances to the controller 150 .

FIG. 2 is a circuit diagram illustrating an example of the image sensor 130 in FIG. 1 . As an example, an example of a single pixel of the image sensor 130 is illustrated in FIG. 2 . The image sensor 130 may include a plurality of pixels as well. In this case, each of the plurality of pixels may have the same structure as shown in FIG. 2 . The image sensor 130 may be extended even further to include a conventional RGB pixel.

Referring to FIGS. 1 and 2 , the image sensor 130 includes first and second P-type transistors PT 1 and PT 2 , first to fourth N-type transistors NT 1 to NT 4 , first and second capacitors C 1 and C 2 , first and second transfer gates TG 1 and TG 2 , and a photodiode PD.

A cathode of the photodiode PD is commonly connected to first nodes (for example, sources) of the first and second transfer gates TG 1 and TG 2 . An anode of the photodiode PD is connected to a ground terminal. First and second gate voltages VG 1 and VG 2 are supplied to gates of the first and second transfer gates TG 1 and TG 2 , respectively. The first and second gate voltages VG 1 and VG 2 may be supplied from the image sensor driver 140 . Second nodes (for example, drains) of the first and second transfer gates TG 1 and TG 2 are connected to the first and second detection nodes FD 1 and FD 2 , respectively.

The first capacitor C 1 is connected between the first detection node FD 1 and the ground terminal. The first detection node FD 1 may be connected to the second node (e.g., a drain) of the first P-type transistor PT 1 and may be connected to the gate of the first N-type transistor NT 1 . The second capacitor C 2 is connected between the second detection node FD 2 and the ground terminal. The second detection node FD 2 may be connected to the second node (for example, a drain) of the second P-type transistor PT 2 and may be connected to a gate of the third N-type transistor NT 3 .

A first node (for example, a source) of the first P-type transistor PT 1 is connected to a power supply node to which the power source voltage VDD is supplied. A second node (for example, a drain) of the first P-type transistor PT 1 is connected to the first detection node FD 1 . The first reset signal RST 1 is supplied to the gate of the first P-type transistor PT 1 . The first reset signal RST 1 may be supplied from the image sensor driver 140 . A first node (for example, a source) of the second P-type transistor PT 2 is connected to the power supply node to which the power supply voltage VDD is supplied. A second node (for example, a drain) of the second P-type transistor PT 2 is connected to the second detection node FD 2 . The second reset signal RST 2 is supplied to the gate of the second P-type transistor PT 2 . The second reset signal RST 2 may be supplied from the image sensor driver 140 .

A first node (for example, a source) of the first N-type transistor NT 1 is connected to a first node (for example, a source) of the second N-type transistor NT 2 . A second node (for example, a drain) of the first N-type transistor NT 1 is connected to the power supply terminal. The gate of the first N-type transistor NT 1 is connected to the first detection node FD 1 . A first node (for example, a source) of the second N-type transistor NT 2 is connected to the first node (for example, a source) of the first N-type transistor NT 1 . A second node (for example, a drain) of the second n-type transistor NT 2 may be a first output terminal at which a first output voltage VOUT 1 is output. A first selection signal SEL 1 is supplied to a gate of the second N-type transistor NT 2 . The first selection signal SEL 1 may be supplied from the image sensor driver 140 .

A first node (for example, a source) of the third N-type transistor NT 3 is connected to a first node (for example, a source) of the fourth N-type transistor NT 4 . A second node (for example, a drain) of the third N-type transistor NT 3 is connected to the power supply terminal. A gate of the third N-type transistor NT 3 is connected to the second detection node FD 2 . A first node (for example, a source) of the fourth N-type transistor NT 4 is coupled to a first node (for example, a source) of the third N-type transistor NT 3 . A second node (for example, a drain) of the fourth N-type transistor NT 4 may be a second output terminal at which a second output voltage VOUT 2 is output. A second selection signal SEL 2 is supplied to a gate of the fourth N-type transistor NT 4 . The second selection signal SEL 2 may be supplied from the image sensor driver 140 .

As an example, the first and second P-type transistors PT 1 and PT 2 may be p-type metal oxide semiconductor field effect transistors (PMOSFETs). The first to fourth N-type transistors NT 1 to NT 4 may be N-type metal oxide semiconductor field effect transistors (NMOSFETs). The first and second transfer gates TG 1 and TG 2 may be NMOSFETs. However, a pixel of the image sensor 130 according to the present inventive concept is not limited to the structure illustrated in FIG. 2 . For example, the P-type transistors and the N-type transistors are interchangeable, and a power supply terminal and a ground terminal are interchangeable.

FIG. 3 illustrates an example of a vertical cross-sectional view of the first and second transfer gates TG 1 and TG 2 and the photodiode PD in FIG. 2 . Referring to FIGS. 2 and 3 , a P-type well 212 is formed in a P-type substrate 210 . For example, the P-type well 212 may be formed directly on a P-type substrate 210 or in a pocket p-well (not shown) formed in an N-type well. A doping concentration of the P-type well 212 may be higher than a doping concentration of the P-type substrate 210 .

First to third N-type regions 213 , 215 , and 217 are formed in the P-type well 212 . A first gate 214 is disposed on the P-type well 212 in a space between the first and second N-type regions 213 and 215 . A second gate 216 is disposed on the P-type well 212 in the space between the second and third N-type regions 215 and 217 . The first N-type region 213 , the second N-type region 215 , and the first gate 214 may constitute a first transfer gate TG 1 . The second N-type region 215 , the third N-type region 217 , and the second gate 216 may constitute a second transfer gate TG 2 . The second N-type region 215 and the P-type well 212 may constitute a photodiode PD.

When a second light L 2 is incident on the second N-type region 215 , a photoelectron is generated. When the first transfer gate TG 1 is turned on by a first gate voltage VG 1 , the photoelectrons may flow to the first detection node FD 1 through the first transfer gate TG 1 . When the second transfer gate TG 2 is turned on by a second gate voltage VG 2 , the photoelectrons may flow to the second detection node FD 2 through the second transfer gate TG 2 . An intensity of the second light L 2 incident on the second N-type region 215 may be measured by measuring a voltage variation at the first and second detection nodes FD 1 and FD 2 .

FIG. 4 illustrates examples of voltages supplied to the image sensor 130 in FIGS. 2 and 3 and voltages generated by the image sensor. Referring to FIGS. 1 to 3 , when the distance measuring apparatus 100 performs distance measurement, the image sensor driver 140 may initially activate reset signals RST 1 and RST 2 (for example, logic low) at a first time T 1 and may subsequently deactivate the reset signals RST 1 and RST 2 (for example, logic high). While the reset signals RST 1 and RST 2 are in the active state, the first and second P-type transistors PT 1 and PT 2 are turned on. When the first and second P-type transistors PT 1 and PT 2 are turned on, voltages of the first and second detection nodes FD 1 and FD 2 are charged to a power supply voltage VDD. Since the first and second capacitors C 1 and C 2 are connected to the first and second detection nodes FD 1 and FD 2 , respectively, the voltages of the first and second detection nodes FD 1 and FD 2 may be maintained at the power supply voltage VDD even when the first and second P-type transistors PT 1 and PT 2 are turned off. As an example, while the reset signals RST 1 and RST 2 are in the active state, the first and second output voltages VOUT 1 and VOUT 2 may be reset to an initial value, for example, a ground potential. While the reset signals RST 1 and RST 2 are in the active state, the second gate voltage VG 2 may be in a high and the first gate voltage VG 1 may be in a low. Accordingly, photoelectrons generated by a background light incident on the photodiode PD may be transmitted to the second detection nodes FD 2 by the second transfer gate TG 2 . Pulse widths of the reset signals RST 1 and RST 2 may be maintained time interval between a first time T 1 and a second time T 2 .

After the image sensor 130 is reset, for example, after the first and second capacitors C 1 and C 2 are charged to the power supply voltage VDD, the light source driver 120 output a pulse signal PUL at the second time T 2 . The light source 110 may irradiate a first light L 1 (for example, a laser) to the target object in a pulse form in response to the pulse signal PUL.

The first gate voltage VG 1 and the second gate voltage VG 2 may be complementarily or differentially controlled (or driven) at the second time T 2 in synchronization with the irradiation of the first light L 1 from the light source 110 . For example, the image sensor driver 140 may gradually increase the first gate voltage VG 1 from a low level to a high level during a predetermined duty period, for example, time interval between the second time T 2 and a fifth time T 5 . Also the image sensor driver 140 may gradually decreases the second gate voltage VG 2 from a high level to a low level during a predetermined duty period, for example, time interval between the second time T 2 and the fifth time T 5 .

While the first gate voltage VG 1 and the second gate voltage VG 2 are complementarily or differentially driven, the intensity of the light incident on the photodiode PD is transmitted to the first and second detection nodes PD 1 and PD 2 . For example, the second light L 2 may be incident on the photodiode PD during time interval between a third time T 3 and a fourth time T 4 . When there is no incident light L 2 , the photodiode PD generates only photoelectrons by an ambient light. When there is incident light L 2 , the photodiode PD generates the photoelectrons by the ambient light and the second light L 2 . Accordingly, the number of photoelectrons, generated in the photodiode PD while the second light L 2 is incident, is greater than the number of photoelectrons generated in the photodiode PD when the second light L 2 is not incident. While the first transfer gate TG 1 and the second transfer gate TG 2 are complementarily or differentially driven, they may operate as voltage control resistors. While the first transfer gate TG 1 and the second transfer gate TG 2 are complementarily or differentially driven, they may operate at a sub-threshold.

More specifically, a difference between a high level and a low level may be controlled within a threshold voltage in a voltage range lower than threshold voltages of the first transfer gate TG 1 and the second transfer gate TG 2 . For example, when the threshold voltage of the first transfer gate TG 1 and the second transfer gate TG 2 is 0.5 volt, the first gate voltage VG 1 may be swept from 0.1 volt to 0.4 volt during a time interval between the second time T 2 to the fifth time T 5 .

Voltages at the first and second detection nodes FD 1 and FD 2 or voltages charged to the first and second capacitors C 1 and C 2 may be gradually decreased by photoelectrons generated by an ambient light even when there is no incident light L 2 . While there is incident light L 2 , the voltages of the first and second detection nodes FD 1 and FD 2 or the voltages charged to the first and second capacitors C 1 and C 2 are more decreased by the photoelectrons generated by not only an ambient light but also the second light L 2 . That is, the voltages of the first and second detection nodes FD 1 and FD 2 are significantly decreased while there is incident light L 2 , as illustrated in FIG. 4 .

To significantly reduce noise generated due to the ambient light, a band-pass filter may be integrated. A transmission wavelength band of the band-pass filter may cover specific spectral band of the second light L 2 . Specifically, the second light L 2 is an infrared laser, and the band-pass filter may deliver precise transmission of specific infrared spectral bands while blocking out-of-band signals at higher and lower wavelengths. The first gate voltage VG 1 is gradually increased during a duty time. Accordingly, as the time at which the second light L 2 is incident is closer to the second time T 2 , that is, a time at which the first light L 1 is irradiated, the number of photoelectrons which may be transmitted through the first transfer gate TG 1 decreases. As the time at which the second light L 2 is incident is closer to the fifth time T 5 , that is, a time at which driving of the first gate voltage VG 1 is terminated, the number of the photoelectron which may be transmitted through the first transfer gate TG 1 increases. Similarly, the second gate voltage VG 2 gradually decreases during the duty time. Accordingly, as the time at which the second light L 2 is incident is closer to the second time T 2 , that is, the time at which the first light L 1 is irradiated, the number of photoelectrons which may be transmitted through the second transfer gate TG 2 increases. As the time at which the second light L 2 is incident is closer to the fifth time T 5 , that is, the time at which the driving of the second gate voltage VG 2 is terminated, the number of the photoelectrons which may be transmitted through the second transfer gate TG 2 decreases.

That is, the first transfer gate TG 1 may decrease a voltage at the first detection node FD 1 in proportion to the intensity of the light incident on the photodiode PD and in proportion to a time elapsed from the second time T 2 that the first light L 1 is irradiated or the first transfer gate TG 1 is driven by the first gate voltage VG 1 . The second transfer gate TG 2 may decrease a voltage at the second detection node FD 2 in proportion to the intensity of the light incident on the photodiode PD and in inverse proportion to a time elapsed from the second time T 2 that the first light L 1 is irradiated or the second transfer gate TG 2 is driven by second gate voltage VG 2 .

Referring to a first exposure interval EI 1 in which the second light L 2 is incident, a third time T 3 at which the second light L 2 is incident is closer to the first time T 1 than the fifth time T 5 between the second time T 2 and the fifth time T 5 . Accordingly, the number of photoelectrons transmitted through the second transfer gate TG 2 is greater than the number of photoelectrons transmitted through the first transfer gate TG 1 . A voltage at the second detection node FD 2 is further decreased a voltage at the first detection node FD 1 .

At the fifth time T 5 at which the duty time is terminated, the image sensor driver 140 may control the first and second gate voltages VG 1 and VG 2 in such a manner that the first and second gate voltages TG 1 and TG 2 are turned off. For example, the image sensor driver 140 may supply a ground voltage to the first and second gate voltages VG 1 and VG 2 .

At a sixth time T 6 , the image sensor driver 140 activates the first and second selection signals SEL 1 and SEL 2 . When the first and second selection signals SEL 1 and SEL 2 are activated, the voltages at the first and second detection nodes FD 1 and FD 2 are transmitted by the first and third N-type transistors NT 1 and NT 3 and are output through the second and fourth N-type transistors NT 2 and NT 4 . For example, the second and fourth N-type transistors NT 2 and NT 4 may output the first and second output voltages VOUT 1 and VOUT 2 .

At the seventh time T 7 , the first and second reset signals RST 1 and RST 2 may be received to measure the next distance. To measure the next distance at the seventh time T 7 , the second gate voltage VG 2 may rise to a high level to remove the photoelectrons accumulated in the photodiode PD by the ambient light.

For an eighth time T 8 to a twelfth time T 12 , the next distance measurement may be performed. Referring to a second exposure interval EI 2 in which the second light L 2 is incident during the next distance measurement, the time at which the second light L 2 is incident is a ninth time T 9 and a tenth time T 10 . The ninth and tenth times T 9 and T 10 are closer to the eleventh time T 11 , at which the duty time is terminated, than the eighth time T 8 at which the first light L 1 is irradiated. Thus, the first detection voltage FD 1 is further decreased than the second detection voltage FD 2 .

As described above, the photodiode PD generates photoelectrons in proportional to the intensity of an incident light, for example, the intensity of the second light L 2 . That is, the first and second transfer gates TG 1 and TG 2 decrease the voltages at the first and second detection nodes FD 1 and FD 2 in proportion to the intensity of the second light L 2 . The first and second gate voltages VG 1 and VG 2 are controlled complementarily or differentially. The first gate voltage VG 1 increases from a low level to a high level, and the second gate voltage VG 2 decreases from a high level to a low level. Accordingly, the first transfer gate TG 1 decreases the voltage at the first detection node FD 1 in proportion to a time elapsed from the time at which the first light L 1 is irradiated, and the second transfer gate TG 2 decreases the voltage at the second detection node FD 2 in inverse proportion to the time elapsed from the time at which the first detection node L 1 is irradiated.

The first output voltage VOUT 1 and the second output voltage VOUT 2 complementarily or differentially involve not only information on a luminance of the second light L 2 but also information on whether a time, at which the second light L 2 is incident, is close to a starting point or an ending point of duty of time. A time between the time, at which the first light L 1 is irradiated, and the time, at which the second light L 2 is incident, may be a time of flight (TOF). That is, the first output voltage VOUT 1 and the second output voltage VOUT 2 further include information on what percentage of the duty time in the flight time (TOF). Accordingly, when a distance is complementarily or differentially calculated using the first output voltage VOUT 1 and the second output voltage VOUT 2 , reliability of the calculated distance is improved.

For example, the distance measuring apparatus 100 calculates a distance using at least one of a ratio of the first output voltage VOUT 1 to the sum of the first output voltage VOUT 1 and the second output voltage VOUT 2 and a ratio of the second output voltage VOUT 2 to the sum of the first output voltage VOUT 1 and the second output voltage VOUT 2 .

FIG. 5 illustrates examples of the first and second gate voltages VG 1 and VG 2 corresponding to a single duty time DT. Referring to FIG. 5 , the first gate voltage VG 1 may gradually increase from a first positive voltage to a second positive voltage during the duty time DT. For example, the first gate voltage VG 1 may increases stepwise, as shown by an enlarged drawing ED. A first positive voltage of the first gate voltage VG 1 may have a voltage level in which the first transmission gate TG 1 is turned on.

The second gate voltage VG 2 may gradually decrease from a second positive voltage to a first positive voltage during the duty time DT. For example, the second gate voltage VG 2 may decrease stepwise. The first positive voltage of the second gate voltage VG 2 may have a voltage level in which the second transfer gate TG 2 is turned on.

As an example, a difference ΔV between a starting level and an ending level of the first gate voltage VG 1 or the second gate voltage VG 2 may controlled to be lower than 100 mV.

As an example, the duty time DT may be set in proportion to a maximum measuring distance of the distance measuring apparatus 100 (see FIG. 1 ). As the duty time DT increases, the maximum measurement distance increases. Meanwhile, as the duty time DT decreases, the maximum measurement distance may decrease. For example, the duty time DT is controlled to be 10 microseconds (μs) or less, and the maximum measuring distance of the distance measuring apparatus 100 may reach at approximately 1.5 km.

FIG. 6 illustrates a result of a simulation in which voltages of first and second detection nodes and first and second output voltages are measured by adjusting incident times of a second light when a duty time is 1 microsecond. Referring to FIGS. 2 and 6 , as the time at which the second light L 2 is incident is closer to the second time T 2 , the voltage at the first detection node FD 1 is less decreased while the voltage at the second detection node FD 2 is further decreased. That is, as the time at which the second light L 2 is incident is closer to the second time T 2 , the first output voltage VOUT 1 becomes high level while the second output voltage VOUT 2 becomes low level.

Similarly, as the time at which the second light L 2 is incident is closer to the fifth time T 5 , the voltage at the first detection node FD 1 is further decreased while the voltage at the second detection node FD 2 is less decreased. That is, as the time at which the second light L 2 is incident is closer to the second time T 2 , the first output voltage VOUT 1 becomes lower while the second output voltage VOUT 2 becomes higher.

FIG. 7 illustrates an example in which a difference between the first output voltage VOUT 1 and the second output voltage VOUT varies depending on a time of flight (TOF). In FIG. 7 , a horizontal axis denotes a time of flight (TOF), and a unit thereof is time T. A vertical axis denotes a value obtained by subtracting the second output voltage VOUT 2 from the first output voltage VOUT 1 , and a unit thereof is a voltage V.

Referring to FIGS. 4 and 7 , as the time of flight (TOF) decreases, the first output voltage VOUT 1 increases while the second output voltage VOUT 2 decreases. Accordingly, as the time of flight (TOF) decreases, the value obtained by subtracting the second output voltage VOUT 2 from the first output voltage VOUT 1 increases. As the time of flight (TOF) increases, the first output voltage VOUT 1 decreases while the second output voltage VOUT 2 increases. Accordingly, as the time of flight (TOF) increases, the value obtained by subtracting the second output voltage VOUT 2 from the first output voltage VOUT 1 decreases. That is, the value obtained by subtracting the second output voltage VOUT 2 from the first output voltage VOUT 1 is in inverse proportion to the time of flight (TOF), and the time of flight (TOF) may be calculated according to the value obtained by subtracting the second output voltage VOUT 2 from the first output voltage VOUT 1 .

FIG. 8 is a flowchart illustrating an example in which a distance measuring apparatus according to an example embodiment of the present disclosure measures a distance. Referring to FIGS. 1, 2 and 8 , in operation S 110 , the image sensor driver 140 may activate the first and second reset signals RST 1 and RST 2 . As the first and second reset signals RST 1 and RST 2 are activated, the first and second capacitors C 1 and C 2 connected to the photodiode PD through the first and second transfer gates TG 1 and TG 2 may be charged to the power supply voltage VDD.

In operation S 120 , the light source driver 120 may output the pulse signal PUL in such a manner that the light source 110 irradiates the first light L 1 . The image sensor driver 140 may drive the first and second gate voltages VG 1 and VG 2 in synchronization with output of the pulse signal PUL.

In operation S 130 , the image sensor driver 140 may control the first transfer gate TG 1 through the first gate voltage VG 1 in such a manner that a voltage of the first capacitor C 1 decreases in proportion to the intensity of a light incident on the photodiode PD and in proportion to a time elapsed after the first light L 1 is irradiated.

In operation S 140 , the image sensor driver 140 may control the second transfer gate TG 2 through the second gate voltage VG 2 in such a manner that a voltage of the second capacitor C 2 decreases in proportion to the intensity of a light incident on the photodiode PD and in inverse proportion to a time elapsed after the first light L 1 is irradiated.

In operation S 150 , the controller 150 may measure a distance using the voltages of the first capacitor C 1 and the second capacitor C 2 . For example, the image sensor driver 140 may control the image sensor 130 in such a manner that the voltage of the first capacitor C 1 and the voltage of the second capacitor C 2 are amplified to be output to the first output voltage VOUT 1 and the second output voltage VOUT 2 . The controller 150 or the image sensor driver 140 may measure (or calculate) a distance using the first output voltage VOUT 1 and the second output voltage VOUT 2 .

According to example embodiments of the present disclosure, lights incident on a photodiode are measured as voltages through transfer gates which are differentially or complementarily controlled. Since a distance value is complementarily or differentially measured, a distance measuring apparatus having improved reliability and a method of operating the same are provided.

Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the following claims.