Static random access memory cell and operating method thereof capable of reducing leakage current

1. Field of the Invention

The invention is related to a static random access memory cell and an operating method thereof, and more particularly to a static random access memory cell and an operating method thereof for effectively reducing half select disturb and leakage current.

2. Description of the Prior Art

Static random access memory (SRAM) is widely used for caches of processors for computers, workstations, electronic devices, hard disk buffers, router buffers . . . etc.

In recent years with rapid development of technology, the ratio of SRAM to the total area of the chip is getting higher, and many portable electronic devices are increasingly demanding longer battery life. Therefore, circuits are designed to reduce the overall power consumption with low operating voltage. Hence, reducing the operating voltage of the SRAM becomes extremely important. However, the circuit of conventional SRAM cannot operate at a low voltage because it causes problems such as half select disturb and leakage current. Therefore, a new type of SRAM design is needed to make improvement.

An embodiment discloses a static random access memory cell including first and second cross-coupled inverters, a write transistor and a read transistor. The first inverter has a first latch node and the second inverter has a second latch node. The write transistor is coupled in series with a wordline transistor between the first latch node of the first inverter and a bitline. The read transistor is coupled between the bitline and a reference terminal and has a control terminal coupled to the first latch node of the first inverter.

Another embodiment discloses a method of operating the static random access memory cell. The method includes enabling the wordline transistor during a write operation, and enabling the write transistor during the write operation. The reference terminal is set to floating during the write operation.

These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.

FIG. 1 is a diagram of an embodiment of a static random access memory cell.

FIG. 2 is a diagram of voltage variations during the read and write operation of the static random access memory cell.

FIG. 3 is a diagram of another embodiment of a static random access memory cell.

FIG. 4 is a diagram of another embodiment of a static random access memory cell.

FIG. 5 is a diagram of another embodiment of a static random access memory cell.

FIG. 6 is a flowchart of a method for operating the static random access memory cells of FIGS. 1 and 4 .

FIG. 7 is a flowchart of a method for operating the static random access memory cells of FIGS. 3 and 5 .

FIG. 1 is a diagram of an embodiment of a static random access memory (SRAM) cell 100 . The SRAM cell 100 comprises a first inverter 102 , a second inverter 104 , a first write transistor 106 , a second write transistor 108 , a first wordline transistor 110 , a second wordline transistor 112 and a first read transistor 114 .

The first inverter 102 comprises an output coupled to a first latch node Q and an input coupled to a second latch node QB. The second inverter 104 comprises an output coupled to a second latch node QB and an input coupled to the first latch node Q. The first wordline 110 comprises a first terminal coupled to a first bitline BL, a second terminal and a control terminal coupled to a wordline WL. The first write transistor 106 comprises a first terminal coupled to the second terminal of the first wordline transistor 110 , a second terminal coupled to the first latch node Q, and a control terminal coupled to a write line WWL. The second write transistor 108 comprises a first terminal coupled to the second latch node QB, a second terminal, and a control terminal coupled to the write line WWL. The second wordline transistor 112 comprises a first terminal coupled to the second terminal of the second write transistor 108 , a second terminal coupled to a second bitline BLB, and a control terminal coupled to the wordline WL. The first read transistor 114 comprises a first terminal coupled to the first bitline BL, a second terminal coupled to a reference terminal VGND, and a control terminal coupled to the first latch node Q. The first write transistor 106 , the second write transistor 108 , the first wordline transistor 110 , the second wordline transistor 112 and the first read transistor 114 may all be n-type transistors.

The first inverter 102 comprises a pull-up transistor 122 and a pull-down transistor 124 . The pull-up transistor 122 can be a p-type transistor and the pull-down transistor 124 can be an n-type transistor. The pull-up transistor 122 comprises a first terminal coupled to a first voltage source VDD, a second terminal coupled to the first latch node Q and a control terminal coupled to the second latch node QB. The pull-down transistor 124 comprises a first terminal coupled to the first latch node Q, a second terminal coupled to a second voltage source VSS and a control terminal coupled to the second latch node QB. The first voltage source VDD can provide a system voltage and the second voltage source VSS can provide a ground voltage.

The second inverter 104 comprises a pull-up transistor 126 and a pull-down transistor 128 . The pull-up transistor 126 can be a p-type transistor and the pull-down transistor 128 can be an n-type transistor. The pull-up transistor 126 comprises a first terminal coupled to a first voltage source VDD, a second terminal coupled to the second latch node QB and a control terminal coupled to the first latch node Q. The pull-down transistor 128 comprises a first terminal coupled to the second latch node QB, a second terminal coupled to a second voltage source VSS and a control terminal coupled to the first latch node Q.

FIG. 2 is a diagram of voltage variations during the read and write operation of the SRAM cell 100 . During the write operation, a wordline signal enables the first wordline transistor 110 and the second wordline transistor 112 through the wordline WL, and a write signal enables the first write transistor 106 and the second write transistor 108 through the write line WWL. In addition, the reference terminal VGND is set to floating. In this way, the first wordline transistor 110 and the first write transistor 106 establishes conduction between the first latch node Q and the first bitline BL. The second wordline transistor 112 and the second write transistor 108 establishes conduction between the second latch node QB and the second bitline BLB. It allows the value of the first bitline BL ( 0 or 1 ) to be transmitted the first latch node Q and stored in the SRAM cell 100 .

During the read operation, a wordline signal disables the first wordline transistor 110 and the second wordline transistor 112 via the wordline WL, and a write signal disables the first write transistor 106 and the second write transistor 108 via the write line WWL. The first bitline BL can be precharged to a high voltage and the reference terminal VGND can be set to a low voltage. If the value stored in the first latch node Q is 1 and the value stored in the second latch node QB is 0, then the first read transistor 114 is enabled and the voltage of the first bitline BL would be pulled down to low by the reference terminal VGND. The value stored in the SRAM cell 100 can be obtained by comparing the voltage of the first bitline BL with a predetermined voltage set between the high voltage and the low voltage. If the value stored in the first latch node Q is 0 and the value stored in the second latch node QB is 1, then the first read transistor 114 is disabled and the first bitline BL maintains the high voltage. The value stored in the SRAM cell 100 can be obtained by comparing the voltage of the first bitline BL with the predetermined voltage set between the high voltage and the low voltage.

FIG. 3 is a diagram of another embodiment of an SRAM cell 200 . It differs from the SRAM cell 100 in that the SRAM cell 200 further comprises a second read transistor 116 . The second read transistor 116 comprises a first terminal coupled to the second bitline BLB, a second terminal coupled to the reference terminal VGND and a control terminal coupled to the second latch node QB.

The write operation of the SRAM cell 200 is identical to the SRAM cell 100 , yet the read operation is different. During the read operation, a wordline signal disables the first wordline transistor 110 and the second wordline transistor 112 via the wordline WL, and a write signal disables the first write transistor 106 and the second write transistor 108 via the write line WWL. The first bitline BL and the second bitline BLB can be precharged to a high voltage and the reference terminal VGND can be set to a low voltage. If the value stored in the first latch node Q is 1 and the value stored in the second latch node QB is 0, then the first read transistor 114 is enabled and the voltage of the first bitline BL would be pulled down to low by the reference terminal VGND. Because the second read transistor 116 is disabled, the second bitline BLB maintains the high voltage. If the value stored in the first latch node Q is 0 and the value stored in the second latch node QB is 1, then the second read transistor 116 is enabled and the voltage of the second bitline BLB would be pulled down to low by the reference terminal VGND. Because the first read transistor 114 is disabled, the first bitline BL maintains the high voltage. Therefore, the value stored in the SRAM cell 200 can be obtained.

FIG. 4 is a diagram of another embodiment of an SRAM cell 300 . It differs from the SRAM cell 100 in that the control terminal of the first read transistor 114 is coupled to the second latch node QB.

The write operation of the SRAM cell 300 is identical to the SRAM cell 100 , yet the read operation is different. During the read operation, a wordline signal disables the first wordline transistor 110 and the second wordline transistor 112 via the wordline WL, and a write signal disables the first write transistor 106 and the second write transistor 108 via the write line WWL. The first bitline BL can be precharged to a high voltage and the reference terminal VGND can be set to a low voltage. If the value stored in the first latch node Q is 0 and the value stored in the second latch node QB is 1, then the first read transistor 114 is enabled and the voltage of the first bitline BL would be pulled down to low by the reference terminal VGND. The value stored in the SRAM cell 300 can be obtained by comparing the voltage of the first bitline BL with a predetermined voltage set between the high voltage and the low voltage. If the value stored in the first latch node Q is 1 and the value stored in the second latch node QB is 0, then the first read transistor 114 is disabled and the first bitline BL maintains the high voltage. The value stored in the SRAM cell 300 can be obtained by comparing the voltage of the first bitline BL with the predetermined voltage set between the high voltage and the low voltage.

FIG. 5 is a diagram of another embodiment of an SRAM cell 400 . It differs from the SRAM cell 300 in that the SRAM cell 400 further comprises a second read transistor 116 . The second read transistor 116 comprises a first terminal coupled to the second bitline BLB, a second terminal coupled to the reference terminal VGND and a control terminal coupled to the first latch node Q.

The write operation of the SRAM cell 400 is identical to the SRAM cell 300 , yet the read operation is different. During the read operation, a wordline signal disables the first wordline transistor 110 and the second wordline transistor 112 via the wordline WL, and a write signal disables the first write transistor 106 and the second write transistor 108 via the write line WWL. The first bitline BL and the second bitline BLB can be precharged to a high voltage and the reference terminal VGND can be set to a low voltage. If the value stored in the first latch node Q is 0 and the value stored in the second latch node QB is 1, then the first read transistor 114 is enabled and the voltage of the first bitline BL would be pulled down to low by the reference terminal VGND. Because the second read transistor 116 is disabled, the second bitline BLB maintains the high voltage. If the value stored in the first latch node Q is land the value stored in the second latch node QB is 0, then the second read transistor 116 is enabled and the voltage of the second bitline BLB would be pulled down to low by the reference terminal VGND. Because the first read transistor 114 is disabled, the first bitline BL maintains the high voltage. Therefore, the value stored in the SRAM cell 400 can be obtained.

The connection between the first bitline BL, the second bitline BLB and the first inverter 102 , the second inverter 104 can be deactivated during the read operation of the SRAM cells 100 , 200 , 300 and 400 . Therefore, it can diminish the effect of half select write disturb and leakage current on the SRAM cells 100 , 200 , 300 and 400 .

FIG. 6 is a flowchart of a method for operating the SRAM cells 100 and 300 . It can include the following steps:

S 600 : During the write operation, enable the first wordline transistor 110 , the second wordline transistor 112 , the first write transistor 106 and the second write transistor 108 so as to transmit the value of the first bitline BL and the second bitline BLB to the first latch node Q and the second latch node QB. The reference terminal VGND is set to floating.

S 602 : Precharge the first bitline BL.

S 604 : During the read operation, disable the first wordline transistor 110 , the second wordline transistor 112 , the first write transistor 106 and the second write transistor 108 . The reference terminal VGND is set to voltage ground.

S 606 : Compare the voltage of the first bitline BL with a predetermined voltage to obtain the value stored in the SRAM cell 100 or 300 .

FIG. 7 is a flowchart of a method for operating the SRAM cells 200 and 400 . It can include the following steps:

S 700 : During the write operation, enable the first wordline transistor 110 , the second wordline transistor 112 , the first write transistor 106 and the second write transistor 108 so as to transmit the value of the first bitline BL and the second bitline BLB to the first latch node Q and the second latch node QB. The reference terminal VGND is set to floating.

S 702 : Precharge the first bitline BL and the second bitline BLB.

S 704 : During the read operation, disable the first wordline transistor 110 , the second wordline transistor 112 , the first write transistor 106 and the second write transistor 108 . The reference terminal VGND is set to voltage ground.

S 706 : Read the value of the first bitline BL and/or the second bitline BLB.

Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.