Power semiconductor module

The present invention relates to a power semiconductor module suitably used in a power device apparatus.

Patent Literature 1 described below discloses a power semiconductor module for a railroad vehicle use including a first element pair formed by connecting a diode element and a MOS-type switching element in antiparallel, the first element pair operating as a positive-side arm in a power converting apparatus, and a second element pair formed by connecting a diode element and a MOS-type switching element in antiparallel, the second element pair operating as a negative-side arm in the power converting apparatus. The first and second element pairs are housed in one module and configured as a 2-in-1 module. The power semiconductor module includes an external electrode terminal that enables series connection of the first and second element pairs.

Patent Literature

Patent Literature 1: Japanese Patent No. 4902029

Technical Problem

The related art described above discloses a circuit example in changing a connection form of a power semiconductor module mounted with a MOSFET or an IGBT connected in series to be easily driven and applying the power semiconductor module to power converting apparatuses for railroad vehicles having different overhead wire voltages. However, the related art does not directly disclose the configuration of the power semiconductor module itself. Therefore, in the related art, in application to various power converting apparatuses for railroad vehicles, a circuit configuration obtained by combining a plurality of power semiconductor modules is necessary. There is room of improvement in terms of versatility.

The present invention has been devised in view of the above, and an object of the present invention is to provide a power semiconductor module having versatility in application to various power converting apparatuses for railroad vehicles.

Solution to Problem

To solve the problems and achieve the object, a power semiconductor module according to the present invention includes: a core module in which a first element pair formed by connecting a diode element and a switching element in antiparallel and a second element pair formed by connecting a diode element and a switching element in antiparallel are connected in series and the first element pair and the second element pair are sealed by resin; and a cover with terminals including a direct-current positive electrode terminal, a direct-current negative electrode terminal, and an alternating-current terminal. In the core module, a first electrode electrically connected to a positive-side electrode of the switching element configuring the first element pair, a second electrode electrically connected to a negative-side electrode of the switching element configuring the first element pair, a third electrode electrically connected to a positive-side electrode of the switching element configuring the second element pair, and a fourth electrode electrically connected to a negative-side electrode of the switching element configuring the second element pair are exposed to a surface. The positive electrode terminal of the cover with terminals is electrically connected to the first electrode. The negative-electrode terminal of the cover with terminals is electrically connected to the fourth electrode. The alternating-current terminal of the cover with terminals is electrically connected to the second electrode and the third electrode.

Advantageous Effects of Invention

According to the present invention, there is an effect that it is possible to provide a power semiconductor module of high withstanding voltage specifications that has versatility and can obtain a mass production effect.

FIG. 1 is a diagram illustrating a schematic functional configuration of a power converting apparatus mounted with a power semiconductor module according to an embodiment.

FIG. 2 is a perspective view illustrating a schematic shape of a core module, which is a basic unit in configuring the power semiconductor module according to the embodiment.

FIG. 3 is a diagram illustrating electric wiring inside the core module illustrated in FIG. 2 .

FIGS. 4A to 4C are exploded perspective views illustrating the exterior configuration of a 500A-rated one-phase module, which is an example of the power semiconductor module according to the first embodiment.

FIG. 5 is a perspective view at the time when a cover with terminals 20 A illustrated in FIG. 4A is visually recognized from the rear surface side and the lower side.

FIG. 6 is a diagram illustrating electric wiring inside a cover with terminals in the 500A-rated one-phase module illustrated in FIGS. 4A to 4C .

FIG. 7 is a perspective view illustrating the exterior configuration of a 1000A-rated one-phase module, which is an example of a power semiconductor module according to a second embodiment.

FIG. 8 is a diagram illustrating electric wiring inside a cover with terminals in the 1000A-rated one-phase module illustrated in FIG. 7 .

FIG. 9 is a perspective view illustrating the exterior configuration of a 500A-rated single-phase module, which is an example of a power semiconductor module according to a third embodiment.

FIG. 10 is a diagram illustrating electric wiring inside a cover with terminals in the 500A-rated single-phase module illustrated in FIG. 9 .

FIG. 11 is a perspective view illustrating the exterior configuration of a 1500A-rated one-phase module, which is an example of a power semiconductor module according to a fourth embodiment.

FIG. 12 is a diagram illustrating electric wiring inside a cover with terminals in the 1500A-rated one-phase module illustrated in FIG. 11 .

FIG. 13 is a perspective view illustrating the exterior configuration of a 500A-rated three-phase module, which is an example of a power semiconductor module according to a fifth embodiment.

FIG. 14 is a diagram illustrating electric wiring inside a cover with terminals in the 500A-rated three-phase module illustrated in FIG. 13 .

FIG. 15 is a perspective view illustrating the exterior configuration of a 500A-rated one-phase three-level module, which is an example of a power semiconductor module according to a sixth embodiment.

FIG. 16 is a diagram illustrating electric wiring inside a cover with terminals in the 500A-rated one-phase three-level module illustrated in FIG. 15 .

FIG. 17 is a perspective view illustrating the exterior configuration of a 2000A-rated one-phase module, which is an example of a power semiconductor module according to a seventh embodiment.

FIG. 18 is a diagram illustrating electric wiring inside a cover with terminals in the 2000A-rated one-phase module illustrated in FIG. 17 .

FIG. 19 is a perspective view illustrating the exterior configuration of a composite module, which is an example of a power semiconductor module according to an eighth embodiment.

FIG. 20 is a diagram illustrating electric wiring inside a cover with terminals in the composite module illustrated in FIG. 19 .

Power semiconductor modules according to embodiments of the present invention are explained in detail below with reference to the drawings. Note that the present invention is not limited by the embodiments explained below.

First Embodiment

FIG. 1 is a diagram illustrating a schematic functional configuration of a power converting apparatus mounted with a power semiconductor module according to a first embodiment. A configuration example of a power converting apparatus 150 mounted on a railroad vehicle 100 is illustrated. As illustrated in FIG. 1 , the power converting apparatus 150 includes a converter 110 , a capacitor 120 , and an inverter 130 . The railroad vehicle 100 is mounted with a transformer 106 disposed on an input end side of the power converting apparatus 150 and connected to the converter 110 and an electric motor 140 disposed on an output end side of the power converting apparatus 150 , connected to the inverter 130 , and configured to receive power supply from the power converting apparatus 150 to drive the vehicle. Note that, as the electric motor 140 , an induction electric motor or a synchronous electric motor is suitable.

One end of a primary winding of the transformer 106 is connected to an overhead wire 101 via a power collecting device 102 . The other end of the transformer 106 is connected to a rail 104 , which is ground potential, via a wheel 103 . Electric power supplied from the overhead wire 101 is input to the primary winding of the transformer 106 via the power collecting device 102 . Electric power generated in a secondary winding of the transformer 106 is input to the converter 110 .

The converter 110 includes circuit units (hereinafter referred to as “legs”) in which positive-side arms configured by semiconductor elements UPC and VPC (e.g., in a U phase, UPC) and negative-side arms configured by semiconductor elements UNC and VNC (e.g., in the U phase, UNC) are respectively connected in series. That is, in the converter 110 , a single-phase bridge circuit including two sets (for the U phase and for a V phase) of legs is configured. Note that, as explained below, in general, the semiconductor elements UPC, VPC, UNC, and VNC have a configuration including a switching element and a diode element connected in antiparallel to the switching element.

The converter 110 performs PWM control of the semiconductor elements UPC, VPC, UNC, and VNC to covert an input alternating-current voltage into a desired direct-current voltage and output the direct-current voltage.

The capacitor 120 functioning as a direct-current power supply is connected in parallel and the inverter 130 that receives a direct-current voltage of the capacitor 120 as an input and converts the direct-current voltage into an alternating-current voltage having any voltage and any frequency and outputs the alternating-current voltage is connected to an output end of the converter 110 .

The inverter 130 includes legs in which positive-side arms configured by semiconductor elements UPI, VPI, and WPI (e.g., in the U phase, UPI) and negative-side arms configured by semiconductor elements UNI, VNI, and WNI (e.g., in the U phase, UNI) are respectively connected in series. That is, in the inverter 130 , a three-phase bridge circuit including three sets (for the U phase, for the V phase, and for a W phase) of legs is configured. Note that, as in the converter 110 , in general, the semiconductor elements UPI, VPI, WPI, UNI, VNI, and WNI have a configuration including a switching element and a diode element connected in antiparallel to the switching element.

The inverter 130 performs PWM control of the semiconductor elements UPI, VPI, WPI, UNI, VNI, and WNI to convert an input direct-current voltage into a desired alternating-current voltage and output the alternating-current voltage.

Note that, in FIG. 1 , as a suitable example of the power converting apparatus according to the first embodiment, an example is explained in which the power converting apparatus is applied to an electric vehicle of alternating-current input. However, the power converting apparatus can also be applied to an electric vehicle of a direct-current input frequently used in a subway, a suburban electric vehicle, or the like. Note that, because the configuration of the electric vehicle of direct-current input is publicly known, explanation of the configuration is omitted.

The power semiconductor module according to the first embodiment is explained. FIG. 2 is a perspective view illustrating a schematic shape of a core module, which is a basic unit in configuring the power semiconductor module according to the first embodiment. FIG. 3 is a diagram illustrating electric wiring inside the core module illustrated in FIG. 2 .

As illustrated in FIG. 2 and FIG. 3 , in a core module 10 , which is the basic unit of the power semiconductor module according to the first embodiment, a first element pair 12 formed by connecting a MOS-Field-Effect-Transistor (MOSFET) 12 a , which is a Metal-Oxide-Semiconductor (MOS)-type switching element, and a Fly Wheel Diode (hereinafter described as “FWD”) 12 b in antiparallel and a second element pair 14 formed by connecting a MOSFET 14 a and a FWD 14 b in antiparallel are sealed by resin and formed. In this way, the core module 10 , which is the basic unit, configures a so-called 2-in-1 module in which two element pairs are housed in one module. Note that, in this embodiment, the MOS-type switching element is used as a switching element. However, other power semiconductor switching elements such as an Insulated Gate Bipolar Transistor (IGBT) can also be used.

In the first element pair 12 , a drain (a positive-side electrode) of the MOSFET and a cathode of the FWD are connected in the module, a connection end of the drain and the cathode is drawn out to the outer side of a portion sealed by resin to configure a first drain electrode D 1 (also referred to as first electrode) in the core module 10 , a source (a negative-side electrode) of the MOSFET and an anode of the FWD are connected in the module, and a connection end of the source and the anode is drawn out to the outer side of the portion sealed by resin to configure a first source electrode S 1 (also referred to as second electrode) in the core module 10 . Similarly, in the second element pair 14 , a drain (a positive-side electrode) of the MOSFET and a cathode of the FWD are connected in the module, a connection end of the drain and the cathode is drawn out to the outer side of a portion sealed by resin to configure a second drain electrode D 2 (also referred to as third electrode) in the core module 10 , and a source (a negative-side electrode) of the MOSFET and an anode of the FWD are connected in the module, and a connection end of the source and the anode is drawn out to the outer side of the portion sealed by resin to configure a second source electrode S 2 (also referred to as fourth electrode) in the core module 10 . As illustrated in FIG. 2 , the first drain electrode D 1 , the first source electrode S 1 , the second drain electrode D 2 , and the second source electrode S 2 of the core module 10 are respectively provided to be exposed to the surface of the core module 10 sealed by resin. That is, electrodes corresponding to each of the positive-side electrodes and the negative-side electrodes of the switching element incorporated in the core module 10 and electrically connected to the electrodes are provided on the surface of the core module 10 .

FIG. 4C is an exploded perspective view illustrating the exterior configuration of a 500A-rated one-phase module, which is an example of the power semiconductor module according to the first embodiment. The 500A-rated one-phase module illustrated in FIG. 4C is configured by using a cover with terminals 20 A illustrated in FIG. 4A and the core module 10 illustrated in FIG. 4B . The cover with terminals 20 A has a box-shaped structure opened in a second surface (in an example illustrated in FIGS. 4A to 4C , the bottom surface) opposed to a first surface (in the example illustrated in FIGS. 4A to 4C , the top surface). On the first surface, a positive planar electrode 24 P configuring a part of a direct-current positive electrode terminal 22 P, a negative planar electrode 24 N configuring a part of a direct-current negative electrode terminal 22 N, and an alternating-current planar electrode 24 AC configuring a part of an alternating-current terminal 22 AC are formed. Note that at least one of the positive planar electrode 24 P, the negative planar electrode 24 N, and the alternating-current planar electrode 24 AC can be formed on another surface other than the first surface.

FIG. 5 is a perspective view at the time when the cover with terminals 20 A illustrated in FIG. 4A is visually recognized from the rear surface side and the lower side. On the inside of the cover with terminals 20 A, as illustrated in FIG. 5 , a positive projecting electrode 26 P, a negative projecting electrode 26 N, an alternating-current projecting first electrode 26 AC 1 , and an alternating-current projecting second electrode 26 AC 2 projecting inward are formed and a positive coupling electrode 28 P for electrically connecting the positive projecting electrode 26 P and the positive planar electrode 24 P, a negative coupling electrode 28 N for electrically connecting the negative projecting electrode 26 N and a negative planar electrode 24 N, and an alternating coupling electrode 28 AC for electrically connecting each of the alternating-current projecting first electrode 26 AC 1 and the alternating-current projecting second electrode 26 AC 2 and the alternating-current planar electrode 24 AC are formed. The positive projecting electrode 26 P and the positive coupling electrode 28 P configure a part of the direct-current positive electrode terminal 22 P. The negative projecting electrode 26 P and the negative coupling electrode 28 N configure a part of the direct-current negative electrode terminal 22 N. The alternating-current projecting first electrode 26 AC 1 , the alternating-current projecting second electrode 26 AC 2 , and the alternating-current coupling electrode 28 AC configure a part of the alternating-current terminal 22 AC.

In the power semiconductor module according to the first embodiment, when the cover with terminals 20 A is put on an upper part of the core module 10 , that is, a side where the first and second drain electrodes (D 1 and D 2 ) and the first and second source electrodes (S 1 and S 2 ) are exposed, the positive projecting electrode 26 P formed on the cover with terminals 20 A and the first drain electrode D 1 come into contact, the negative projecting electrode 26 N and the second source electrode S 2 come into contact, the alternating-current projecting first electrode 26 AC 1 and the first source electrode S 1 come into contact, and the alternating-current projecting second electrode 26 AC 2 and the second drain electrode D 2 come into contact. Electric wiring between the core module 10 and the cover with terminals 20 A is formed by the contact of the electrodes. The 500A-rated one-phase module illustrated in FIG. 4C is obtained.

FIG. 6 is a diagram illustrating electric wiring inside the cover with terminals 20 A in the 500A-rated one-phase module illustrated in FIGS. 4A to 4C . In FIG. 6 , a circuit configuration of the core module 10 illustrated in FIG. 3 is illustrated. On the inside of the cover with terminals 20 A, the first drain electrode D 1 of the core module 10 and the positive planar electrode 24 P forming the direct-current positive electrode terminal 22 P of the cover with terminals 20 A are connected by the positive projecting electrode 26 P and the positive coupling electrode 28 P and the second source electrode S 2 of the core module 10 and the negative planar electrode 24 N forming the direct-current negative electrode terminal 22 N of the cover with terminals 20 A are connected by the negative projecting electrode 26 N and the negative coupling electrode 28 N. The first source electrode S 1 of the core module 10 and the alternating-current projecting first electrode 26 AC 1 forming the alternating-current terminal 22 AC of the cover with terminals 20 A are connected and the second drain electrode D 2 of the core module 10 and the alternating-current projecting second electrode 26 AC 2 forming the alternating-current terminal 22 AC of the cover with terminals 20 A are connected. The first source electrode S 1 and the second drain electrode D 2 are connected to an alternating-current planar electrode 24 AC forming the alternating-current terminal 22 AC via the alternating-current coupling electrode 28 AC electrically connected to the alternating-current projecting first electrode 26 AC 1 and the alternating-current projecting second electrode 26 AC 2 . In this way, electric wiring between each of the direct-current positive electrode terminal 22 P, the direct-current negative electrode terminal 22 N, and the alternating-current terminal 22 AC and the first and second drain electrodes (D 1 and D 2 ) and first and second source electrodes (S 1 and S 2 ) corresponding to the terminal is formed. The core module 10 is configured.

The 500A-rated one-phase module illustrated in FIGS. 4A, 4B, 4C and FIG. 6 can be used in a leg for one phase configuring an inverter circuit or a leg for one phase configuring a converter circuit. For example, in the configuration illustrated in FIG. 1 , the inverter 130 can be used in a set of each of the semiconductor elements UPI and UNI, the semiconductor elements VPI and VNI, and the semiconductor elements WPI and WNI. The converter 110 can be used in a set of each of the semiconductor elements UPC and UNC and the semiconductor elements VPC and VNC.

Second Embodiment

FIG. 7 is a perspective view illustrating the exterior configuration of a 1000A-rated one-phase module, which is an example of a power semiconductor module according to a second embodiment. FIG. 8 is a diagram illustrating electric wiring inside a cover with terminals 20 B in the 1000A-rated one-phase module illustrated in FIG. 7 .

The 1000A-rated one-phase module is implemented by, as illustrated in FIG. 7 , disposing a pair of the core modules 10 illustrated in FIG. 2 side by side and putting the cover with terminals 20 B on a side where electrodes are exposed in the two core modules 10 . On the inside of the cover with terminals 20 B, projecting electrodes and coupling electrodes (hereinafter referred to as “electrode members”) same as those in the cover with terminals 20 A illustrated in FIG. 5 are configured. The planar electrodes ( 24 P, 24 N, and 24 AC) and the electrodes (D 1 , D 2 , S 1 , and S 2 ) in the two core modules 10 are electrically connected via the electrode members.

On the inside of the cover with terminals 20 B, as illustrated in FIG. 8 , the two core modules 10 are connected in parallel. Therefore, a one-phase module having a double capacity, that is, the 1000A-rated one-phase module is configured.

The 1000A-rated one-phase module illustrated in FIG. 7 and FIG. 8 can be used in a positive-side arm and a negative-side arm for one phase configuring an inverter circuit or a positive-side arm and a negative-side arm for one phase configuring a converter circuit. For example, in the configuration illustrated in FIG. 1 , the inverter 130 can be used in a set of each of the semiconductor elements UPI and UNI, the semiconductor elements VPI and VNI, and semiconductor elements WPI and WNI. The converter 110 can be used in a set of each of the semiconductor elements UPC and UNC and the semiconductor elements VPC and VNC. In both the configurations, it is possible to secure a current capacity twice as large as a current capacity secured when the 500A-rated one-phase module is used.

Third Embodiment

FIG. 9 is a perspective view illustrating the exterior configuration of a 500A-rated single-phase module, which is an example of a power semiconductor module according to a third embodiment. FIG. 10 is a diagram illustrating electric wiring inside a cover with terminals 20 C in the 500A-rated single-phase module illustrated in FIG. 9 .

The 500A-rated single-phase module is implemented by, as illustrated in FIG. 9 , disposing a pair of the core modules 10 illustrated in FIG. 2 side by side and putting the cover with terminals 20 B on a side where electrodes are exposed in the two core modules 10 . On the inside of the cover with terminals 20 C, electrode members same as those in the cover with terminals 20 A illustrated in FIG. 5 are configured. Planar electrodes ( 24 P, 24 N, 24 AC 1 , and 24 AC 2 ) and the electrodes (D 1 , D 2 , S 1 , and S 2 ) in the two core modules 10 are electrically connected via the electrode members.

On the inside of the cover with terminals 20 C, as illustrated in FIG. 10 , the two core modules 10 are connected in parallel and, on the other hand, two alternating-current terminals (S 1 and D 2 ) are not electrically connected to each other and are electrically connected to two individual alternating-current terminals ( 22 AC 1 and 22 AC 2 ) in the cover with terminals 20 C. Consequently, the 500A-rated single-phase module in which 500A-rated one-phase modules are connected in parallel is configured.

The 500A-rated single-phase module illustrated in FIG. 9 and FIG. 10 can be used in a bridge circuit configuring a single-phase inverter circuit or a bridge circuit configuring a single-phase converter circuit. For example, the configuration of the power converting apparatus 150 illustrated in FIG. 1 can be directly used in the converter 110 .

Fourth Embodiment

FIG. 11 is a perspective view illustrating the exterior configuration of a 1500A-rated one-phase module, which is an example of a power semiconductor module according to a fourth embodiment. FIG. 12 is a diagram illustrating electric wiring inside a cover with terminals 20 D in the 1500A-rated one-phase module illustrated in FIG. 11 .

The 1500A-rated one-phase module is implemented by, as illustrated in FIG. 11 , disposing a trio of the core modules 10 illustrated in FIG. 2 side by side and putting the cover with terminals 20 D on a side where electrodes are exposed in the three core modules 10 . On the inside of the cover with terminals 20 D, electrode members same as those in the cover with terminals 20 A illustrated in FIG. 5 are configured. The planar electrodes ( 24 P, 24 N, and 24 AC) and the electrodes (D 1 , D 2 , S 1 , and S 2 ) in the three core modules 10 are electrically connected via the electrode members.

On the inside of the cover with terminals 20 D, as illustrated in FIG. 12 , the three core modules 10 are connected in parallel. Therefore, a one-phase module having a triple capacity, that is, the 1500A-rated one-phase module is configured.

The 1500A-rated one-phase module illustrated in FIG. 11 and FIG. 12 can be used in a leg for each one phase configuring an inverter circuit or a leg for one phase configuring the converter circuit. For example, in the configuration illustrated in FIG. 1 , the inverter 130 can be used in a set of each of the semiconductor elements UPI and UNI, the semiconductor elements VPI and VNI, and the semiconductor elements WPI and WNI. The converter 110 can be used in a set of each of the semiconductor elements UPC and UNC and the semiconductor elements VPC and VNC. In all the configurations, it is possible to secure a current capacity three times as large as a current capacity secured when the 500A-rated one-phase module is used.

Fifth Embodiment

FIG. 13 is a perspective view illustrating the exterior configuration of a 500A-rated three-phase module, which is an example of a power semiconductor module according to a fifth embodiment. FIG. 14 is a diagram illustrating electric wiring inside a cover with terminals 20 E in the 500A-rated three-phase module illustrated in FIG. 13 .

The 500A-rated three-phase module is implemented by, as illustrated in FIG. 13 , disposing a trio of the core modules 10 illustrated in FIG. 2 side by side and putting the cover with terminals 20 E on a side where electrodes are exposed in the three core modules 10 . On the inside of the cover with terminals 20 E, electrode members same as those in the cover with terminals 20 A illustrated in FIG. 5 are configured. Planar electrodes ( 24 P, 24 N, 24 AC 1 , 24 AC 2 , and 24 AC 3 ) and the electrodes (D 1 , D 2 , S 1 , and S 2 ) in the three core modules 10 are electrically connected via the electrode members.

On the inside of the cover with terminals 20 E, as illustrated in FIG. 14 , the three core modules 10 are connected in parallel and, on the other hand, three alternating-current terminals (S 1 and D 2 ) are not electrically connected to one another and are electrically connected to three individual alternating-current terminals ( 24 AC 1 , 24 AC 2 , and 24 AC 3 ) in the cover with terminals 20 E. Consequently, the 500A-rated three-phase module in which three 500A-rated one-phase modules are connected in parallel is configured.

The 500A-rated three-phase module illustrated in FIG. 13 and FIG. 14 can be used in a bridge circuit configuring a three-phase inverter circuit or a bridge circuit configuring a three-phase converter circuit. For example, the configuration of the power converting apparatus 150 illustrated in FIG. 1 can be directly used in the inverter 130 .

All of the power semiconductor modules explained above are application examples to a two-level circuit. However, in the following examples, application examples to a three-level circuit are explained.

Sixth Embodiment

FIG. 15 is a perspective view illustrating the exterior configuration of a 500A-rated one-phase three-level module, which is an example of a power semiconductor module according to a sixth embodiment. FIG. 16 is a diagram illustrating electric wiring inside a cover with terminals 20 F in the 500A-rated one-phase three-level module illustrated in FIG. 15 . Note that, in FIG. 16 , for convenience, three core modules 10 are distinguished by adding suffices “a”, “b”, and “c” thereto.

The 500A-rated one-phase three-level module is implemented by, as illustrated in FIG. 15 , disposing a trio of the core modules 10 illustrated in FIG. 2 side by side and putting the cover with terminals 20 F on a side where electrodes are exposed in the three core modules 10 . On the inside of the cover with terminals 20 F, electrode members same as those in the cover with terminals 20 A illustrated in FIG. 5 are configured. Planar electrodes ( 24 P, 24 C, 24 N, and 24 AC) and the electrodes (D 1 , D 2 , S 1 , and S 2 ) in the three core modules 10 are electrically connected via the electrode members. Note that the planar electrode 24 C is an electrode configuring a part of a direct-current midpoint terminal 22 C.

On the inside of the cover with terminals 20 F, as illustrated in FIG. 16 , the first drain electrode D 1 of a first core module 10 a among the three core modules 10 and a direct-current positive electrode terminal 22 P of the cover with terminals 20 F are electrically connected, the second source electrode S 2 of the first core module 10 a , the first drain electrode D 1 of a second core module 10 b , and the direct-current midpoint terminal 22 C are electrically connected, the second source electrode S 2 of the second core module 10 b and a direct-current negative electrode terminal 22 N of the cover with terminals 20 F are electrically connected, and the first source electrode S 1 of a third core module 10 c , the second drain electrode D 2 of the third core module 10 c , and the alternating-current terminal 22 AC are electrically connected. Among the three core modules, the first source electrode S 1 of the first core module 10 a , the second drain electrode D 2 of the first core module 10 a , and the first drain electrode D 1 of the third core module 10 c are connected and the first source electrode S 1 of the second core module 10 b , the second drain electrode D 2 of the second core module 10 b , and the second source electrode S 2 of the third core module 10 c are connected by electrode members formed to electrically connect the electrodes. By the connection of the electrodes, the 500A-rated one-phase three level module in which three 500A-rated one-phase modules are used is configured.

The 500A-rated one-phase three-level module illustrated in FIG. 15 and FIG. 16 can be used in a leg for each one phase configuring a three-level inverter circuit and a leg for one phase configuring a three-level converter circuit.

The power semiconductor module explained above is an example in which the two or three core modules 10 , which are basic units, are used. However, a power semiconductor module can be configured using four or more core modules 10 . An example in which a power semiconductor module is configured using four core modules 10 is explained below.

Seventh Embodiment

FIG. 17 is a perspective view illustrating the exterior configuration of a 2000A-rated one-phase module, which is an example of a power semiconductor module according to a seventh embodiment. FIG. 18 is a diagram illustrating electric wiring inside a cover with terminals 20 G in the 2000A-rated one-phase module illustrated in FIG. 17 .

The 2000A-rated one-phase module is implemented by, as illustrated in FIG. 17 , disposing a quartet of the core modules 10 illustrated in FIG. 2 side by side and putting the cover with terminals 20 G on a side where electrodes are exposed in the four core modules 10 . On the inside of the cover with terminals 20 G, electrode members same as those in the cover with terminals 20 A illustrated in FIG. 5 are configured. The planar electrodes ( 24 P, 24 N, and 24 AC) and the electrodes (D 1 , D 2 , S 1 , and S 2 ) in the four core modules 10 are electrically connected via the electrode members.

On the inside of the cover with terminals 20 G, as illustrated in FIG. 18 , the four core modules 10 are connected in parallel. Therefore, a one-phase module having a quadruple capacity, that is, the 2000A-rated one-phase module is configured.

The 2000A-rated one-phase module illustrated in FIG. 17 and FIG. 18 can be used in a leg for each one phase configuring an inverter circuit or a leg for one phase configuring the converter circuit. For example, in the configuration illustrated in FIG. 1 , the inverter 130 can be used in a set of each of the semiconductor elements UPI and UNI, the semiconductor elements VPI and VNI, and the semiconductor elements WPI and WNI. The converter 110 can be used in a set of each of the semiconductor elements UPC and UNC and the semiconductor elements VPC and VNC. In all the configurations, it is possible to secure a current capacity four times as large as a current capacity secured when the 500A-rated one-phase module is used.

Eighth Embodiment

FIG. 19 is a perspective view illustrating the exterior configuration of a composite module, which is an example of a power semiconductor module according to an eighth embodiment. FIG. 20 is a diagram illustrating electric wiring inside a cover with terminals 20 H in the composite module illustrated in FIG. 19 .

The composite module illustrated in FIG. 20 is implemented by disposing a quartet of the core modules 10 illustrated in FIG. 2 side by side and putting the cover with terminals 20 H on a side where electrodes are exposed in the four core modules 10 . On the inside of the cover with terminals 20 H, electrode members same as those in the cover with terminals 20 A illustrated in FIG. 5 are configured. The planar electrodes ( 24 P, 24 N, and 24 AC) and the electrodes (D 1 , D 2 , S 1 , and S 2 ) in the four core modules 10 are electrically connected via the electrode members.

On the inside of the cover with terminals 20 H, as illustrated in FIG. 20 , the four core modules 10 are connected in parallel and, on the other hand, four alternating-current terminals (S 1 and D 2 ) are not electrically connected to one another and are electrically connected to four individual alternating-current terminals (( 24 AC 1 , 24 AC 2 , 24 AC 3 , and 24 AC 4 ) in the cover with terminals 20 H. Consequently, the composite module in which four 500A-rated one-phase modules are connected in parallel is configured.

In the composite module illustrated in FIG. 19 and FIG. 20 , a circuit configured by any three core modules 10 among the four core modules 10 can be used as a 500A-rated three-phase inverter circuit. The remaining one core module 10 can be used as, for example, a chopper circuit.

As explained above, with the power semiconductor module according to this embodiment, the power semiconductor module is configured by the core module 10 , on the surface of which the electrodes respectively connected to the positive-side electrode and the negative-side electrode of the switching element of the first element pair and the positive-side electrode and the negative-side electrode of the switching element of the second element pair are exposed, and the cover with terminals 20 in which the electrodes of the core module 10 are internally wired and drawn out as module terminals according to each use. Consequently, it is possible to configure an optimum power semiconductor module corresponding to a current capacity and a two-level or three-level use simply by manufacturing a cover with terminals adapted to each use and changing the number of common core modules 10 . Therefore, versatility is high and manufacturing cost can be reduced.

With the power semiconductor module according to this embodiment, various power conversion modules including the 500A-rated one-phase module, the 1000A-rated one-phase module, the 500A-rated single-phase module, the 1500A-rated one-phase module, the 500A-rated three-phase module, the 500A-rated one-phase three-level module, the 2000A-rated one-phase module, and the composite module (a 500A-rated three-phase+ chopper circuit) can be configured by changing electric wiring on the inside of the cover with terminals using one or a plurality of core modules. Therefore, it is possible to reduce the manufacturing cost of the power converting apparatus and reduce the size of the power converting apparatus.

Note that, in this embodiment, the example is explained in which a rated current of one core module is 500 amperes. However, the rated current is not limited to 500 amperes. For example, a module having any rated current can be formed by changing the size of the core module.

As the material of the MOSFET and the FWD configuring the core module 10 , for example, silicon (hereinafter described as “Si”) or silicon carbide (hereinafter described as “SiC”) can be used. In particular, the SiC has a characteristic that the SiC can be used at high temperature. Therefore, it is possible to increase an allowable operating temperature of a module to temperature higher than an allowable operating temperature in the case of the Si. Therefore, it is possible to further reduce a chip occupied area in each element pair. It is possible to further reduce a module size.

In the case of the SiC, because chip thickness can also be reduced, there is also an advantage that heat resistance decreases. Further, when the SiC is used as the FWD, an ON voltage can be reduced. Therefore, an effect that it is possible to greatly reduce a recovery loss is also obtained. Therefore, even if a chip size is reduced, it is possible to reduce a loss while preventing a temperature rise.

Note that the SiC is an example of a semiconductor called a wide bandgap semiconductor. Besides the SiC, for example, a semiconductor formed using a gallium nitride-based material or diamond also belongs to the wide bandgap semiconductor. Therefore, a configuration in which the wide bandgap semiconductor other than the SiC is used also constitute the gist of the present invention.

In this embodiment, the application to the power converting apparatus for the railroad vehicle is explained. However, inverter circuits and converter circuits having the same configurations are used in power converting apparatuses used for an industrial machine use, an electric automobile use, a hybrid car use, a power conditioner use, and the like. Therefore, it goes without saying that the present invention is applicable to a large number of these applications.

Further, in this embodiment, the application of the present invention to the AC-DC converter, the single-phase inverter, or the three-phase inverter is explained as the example. However, it is also possible to apply the present invention to other power converting apparatuses such as a step-up chopper circuit or a step-down chopper circuit.

10 core module; 12 first element pair; 14 second element pair; 12 a , 14 a MOSFET; 12 b , 14 b FWD; 16 a , 16 b , 16 c , 16 d conductor wire; 20 A, 20 B, 20 C, 20 d , 20 E, 20 F, 20 G, 20 H cover with terminals; 22 P direct-current positive electrode terminal; 22 N direct-current negative electrode terminal; 22 C direct-current midpoint terminal; 22 AC alternating-current terminal; 24 AC 1 first alternating-current terminal; 24 AC 2 second alternating-current terminal; 24 AC 3 third alternating-current terminal; 24 AC 4 fourth alternating-current terminal; 24 P positive planar electrode; 28 P positive coupling electrode; 24 N negative planar electrode; 26 P positive projecting electrode; 26 N negative projecting electrode; 26 AC 1 alternating-current projecting first electrode; 26 AC 2 alternating-current projecting second electrode; 28 N negative coupling electrode; 24 AC alternating-current planar electrode; 28 AC alternating-current coupling electrode; 100 railroad vehicle; 101 overhead wire; 102 power collecting device; 103 wheel; 104 rail; 106 transformer; 110 converter; 120 capacitor; 130 inverter; 140 electric motor; 150 power converting apparatus; D 1 first drain electrode; D 2 second drain electrode; S 1 first source electrode; S 2 second source electrode; UNC, VNC, UNI, VNI, WNI, UPC, VPC, UPI, VPI, WPI semiconductor element.