Spin-orbit torque MRAMs and method for fabricating the same

This Application claims priority of Taiwan Patent Application No. 106141350, filed on Nov. 28, 2017, the entirety of which is incorporated by reference herein.

The disclosure relates to a spin-orbit torque MRAM, and relates to a spin-orbit torque MRAM with a uniform ultra-thin metal layer and a method for fabricating the same.

A spin-orbit torque (SOT) MRAM is a magnetic memory technology which is able to improve an operating speed to 1 ns and achieve an unlimited number of operations, and is considered as an important technology to undertake the spin torque transfer (STT) MRAM. The highest efficiency of the spin Hall effect can be achieved in a 3-nm ultra-thin heavy metal layer. Therefore, how to fabricate a 3-nm metal layer structure with high uniformity is the key to mass production.

For a magnetic tunnel junction (MTJ) device with a top pinned layer, an etching process stops at an ultra-thin spin Hall metal layer. The bottom ultra-thin heavy metal layer of the average spin-orbit torque (SOT) MRAM can become damaged during the etching process, and this may result in uneven operation characteristics and component failure. In order to overcome this problem, the disclosure provides a spin-orbit torque (SOT) MRAM with a uniform ultra-thin heavy metal layer and a method for fabricating the SOT MRAM.

In accordance with one embodiment of the disclosure, a spin-orbit torque (SOT) MRAM is provided. The spin-orbit torque MRAM comprises a spin Hall metal layer, a free magnetic layer, a barrier layer, and a pinned layer. The free magnetic layer is disposed on the spin Hall metal layer. The barrier layer is disposed on the free magnetic layer. The barrier layer comprises a first area and a second area located on both sides of the first area, and the thickness of the second area is equal to or smaller than that of the first area. The pinned layer is disposed on the first area of the barrier layer.

In accordance with one embodiment of the disclosure, a spin-orbit torque (SOT) MRAM is provided. The spin-orbit torque MRAM comprises a spin Hall metal layer, a free magnetic layer, a barrier layer, and a pinned layer. The free magnetic layer is disposed on the spin Hall metal layer. The free magnetic layer comprises a first area and a second area located on both sides of the first area, and the thickness of the second area is equal to or smaller than that of the first area. The barrier layer is disposed on the first area of the free magnetic layer. The pinned layer is disposed on the barrier layer.

In accordance with one embodiment of the disclosure, a high-efficiency method for fabricating a spin-orbit torque (SOT) MRAM is provided, comprising the following steps. A spin Hall metal layer is provided. A free magnetic layer is disposed on the spin Hall metal layer. The free magnetic layer comprises a first area and a second area located on both sides of the first area. A barrier layer is disposed on the free magnetic layer. The barrier layer comprises a first area and a second area located on both sides of the first area. The first area of the barrier layer is disposed on the first area of the free magnetic layer. The second area of the barrier layer is disposed on the second area of the free magnetic layer. A pinned layer is disposed on the barrier layer. A patterned photoresist layer is disposed on the pinned layer. The pinned layer is etched using the patterned photoresist layer as a mask to expose the second area of the barrier layer.

The present disclosure provides a top-pinned layer MTJ structure which is able to terminate etching processes at either any thickness position of a barrier layer or any thickness position of a bottom free magnetic layer, used as a component to develop the optimized process technology of the spin-orbit torque (SOT) MRAM. The uniformity of various layers can be achieved using etch selectivity ratios between various materials, for example, the etch selectivity ratio between the top pinned layer and the barrier oxide layer or between the barrier oxide layer and the free magnetic layer. In addition, a bottom ultra-thin heavy metal layer can be protected by the residual material of the barrier layer or the free magnetic layer. This component structure not only generates the splitting of the upper and lower spin currents by spin Hall effect, but it also achieves the magnetic moment reversal of the free magnetic layer by the spin-orbit effect. Simultaneously, this component structure can overcome problems with the bottom ultra-thin metal layer of a top-pinned layer MTJ of a conventional spin-orbit torque (SOT) structure getting damaged in the etching process and causing uneven operation characteristics and component failure. This process-optimized component structure can significantly improve the production yield of the spin-orbit torque (SOT) MRAM.

A detailed description is given in the following embodiments with reference to the accompanying drawings.

The present disclosure can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:

FIG. 1 is a cross-sectional view of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIGS. 2A-2B are cross-sectional views of a method for fabricating a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIG. 3 is a cross-sectional view of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIGS. 4A-4B are cross-sectional views of a method for fabricating a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIG. 5 is a cross-sectional view of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIGS. 6A-6B are cross-sectional views of a method for fabricating a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIG. 7 is a cross-sectional view of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIGS. 8A-8B are cross-sectional views of a method for fabricating a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIG. 9 is a top view of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIG. 10 is a top view of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIGS. 11A-11D are top views of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIGS. 12A-12D are top views of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure;

FIG. 13 is an electrical test chart of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure; and

FIG. 14 is an electrical test chart of a spin-orbit torque (SOT) MRAM in accordance with one embodiment of the disclosure.

The following description is of the best-contemplated mode of carrying out the disclosure. This description is made for the purpose of illustrating the general principles of the disclosure and should not be taken in a limiting sense. The scope of the disclosure is best determined by reference to the appended claims.

Referring to FIG. 1 , in accordance with one embodiment of the disclosure, a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIG. 1 is a cross-sectional view of the SOT MRAM 10 .

In this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 , a free magnetic layer 14 , a barrier layer 16 , and a pinned layer 18 .

The free magnetic layer 14 is disposed on the spin Hall metal layer 12 . The free magnetic layer 14 comprises a first area 20 and a second area 22 . The second area 22 is located on both sides of the first area 20 . The thickness h 2 of the second area 22 is equal to the thickness h 1 of the first area 20 .

The barrier layer 16 comprises a first area 24 and a second area 26 . The second area 26 is located on both sides of the first area 24 . The first area 24 of the barrier layer 16 is disposed on the first area 20 of the free magnetic layer 14 . The second area 26 of the barrier layer 16 is disposed on the second area 22 of the free magnetic layer 14 .

The pinned layer 18 is disposed on the first area 24 of the barrier layer 16 .

The thickness h 4 of the second area 26 is equal to the thickness h 3 of the first area 24 of the barrier layer 16 .

In some embodiments, the spin Hall metal layer 12 comprises heavy metal materials capable of producing large spin Hall effect, for example, tantalum (Ta), platinum (Pt), hafnium (Hf), tungsten (W), zirconium (Zr), or an alloy thereof.

In some embodiments, the thickness of the spin Hall metal layer 12 is smaller than about 10 nm.

In some embodiments, the free magnetic layer 14 may comprise a single layer or a composite layer.

In some embodiments, the free magnetic layer 14 may comprise a single layer of, for example, iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), cobalt iron boron (CoFeB) alloy, or cobalt iron (CoFe) alloy.

In some embodiments, the free magnetic layer 14 may comprise a composite layer of, for example, cobalt iron boron (CoFeB) alloy/tantalum (Ta)/cobalt iron boron (CoFeB) alloy or cobalt iron (CoFe) alloy/tantalum (Ta)/cobalt iron (CoFe).

In some embodiments, the thickness h 1 of the first area 20 of the free magnetic layer 14 is in a range from about 1 nm to about 3 nm.

In some embodiments, the barrier layer 16 may comprise magnesium oxide (MgO) or aluminum oxide (AlOx).

In some embodiments, the thickness h 3 of the first area 24 of the barrier layer 16 is in a range from about 0.5 nm to about 2 nm.

In some embodiments, the pinned layer 18 may comprise a single layer or a composite layer.

In some embodiments, the pinned layer 18 may comprise a single layer of, for example, cobalt iron (CoFe) alloy, cobalt iron boron (CoFeB) alloy, or cobalt nickel (CoNi) alloy.

In some embodiments, the pinned layer 18 may comprise a composite layer of, for example, cobalt (Co)/platinum (Pt), cobalt (Co)/nickel (Ni), or cobalt (Co)/palladium (Pd).

In the SOT MRAM 10 , the free magnetic layer 14 , the barrier layer 16 and the pinned layer 18 form a magnetic tunnel junction (MTJ) device 30 .

In this embodiment, the shape of the patterned pinned layer 18 may be a circle, an ellipse, a square, or a rectangle, from a top view.

In some embodiments, the magnetic tunnel junction (MTJ) device 30 may be disposed at any position on the spin Hall metal layer 12 without limitation.

Referring to FIGS. 2A-2B , in accordance with one embodiment of the disclosure, a method for fabricating a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIGS. 2A-2B are cross-sectional views of the fabrication method of the SOT MRAM 10 .

As shown in FIG. 2A , a spin Hall metal layer 12 is provided.

Next, a free magnetic layer 14 is disposed on the spin Hall metal layer 12 . The free magnetic layer 14 comprises a first area 20 and a second area 22 . The second area 22 is located on both sides of the first area 20 .

Next, a barrier layer 16 is disposed on the free magnetic layer 14 . The barrier layer 16 comprises a first area 24 and a second area 26 . The second area 26 is located on both sides of the first area 24 . The first area 24 of the barrier layer 16 is disposed on the first area 20 of the free magnetic layer 14 . The second area 26 of the barrier layer 16 is disposed on the second area 22 of the free magnetic layer 14 .

Next, a pinned layer 18 is disposed on the barrier layer 16 .

Next, a patterned photoresist layer 28 is disposed on the pinned layer 18 .

Next, the pinned layer 18 is etched using the patterned photoresist layer 28 as a mask to expose the second area 26 of the barrier layer 16 . The patterned photoresist layer 28 is then removed, as shown in FIG. 2B .

In some embodiments, the pinned layer 18 is etched by, for example, a plasma etching (PE) process, a reactive ion etching (RIE) process, an ion beam etching (IBE) process, or an inductively coupled plasma etching (ICPE) process.

In some embodiments, the pinned layer 18 is etched by, for example, a reactive ion etching (RIE) process.

In some embodiments, the etching gas used in the reactive ion etching (RIE) process may comprise carbon monoxide (CO), ammonia (NH 3 ), oxygen, hydrogen, or fluorine (F 2 ) and argon (Ar).

In this embodiment, the stop time of the etching process is controlled and determined by the difference in the etching rate between various materials, and by simultaneously employing an end point detector (EPD) so that the second area 26 of the barrier layer 16 can maintain the desired thickness; that is, the thickness h 4 of the second area 26 corresponds to the thickness h 3 of the first area 24 of the barrier layer 16 .

Thus, the SOT MRAM 10 is completed.

Referring to FIG. 3 , in accordance with one embodiment of the disclosure, a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIG. 3 is a cross-sectional view of the SOT MRAM 10 .

In this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 , a free magnetic layer 14 , a barrier layer 16 , and a pinned layer 18 .

The free magnetic layer 14 is disposed on the spin Hall metal layer 12 . The free magnetic layer 14 comprises a first area 20 and a second area 22 . The second area 22 is located on both sides of the first area 20 . The thickness h 2 of the second area 22 is equal to the thickness h 1 of the first area 20 .

The barrier layer 16 comprises a first area 24 and a second area 26 . The second area 26 is located on both sides of the first area 24 . The first area 24 of the barrier layer 16 is disposed on the first area 20 of the free magnetic layer 14 . The second area 26 of the barrier layer 16 is disposed on the second area 22 of the free magnetic layer 14 .

The pinned layer 18 is disposed on the first area 24 of the barrier layer 16 .

The thickness h 4 of the second area 26 is smaller than the thickness h 3 of the first area 24 of the barrier layer 16 . For example, the thickness h 4 of the second area 26 is about half the thickness h 3 of the first area 24 of the barrier layer 16 .

In some embodiments, when the thickness h 4 of the second area 26 is smaller than the thickness h 3 of the first area 24 of the barrier layer 16 , the thickness h 4 of the second area 26 may be any proportionality to the thickness h 3 of the first area 24 of the barrier layer 16 .

In some embodiments, the spin Hall metal layer 12 comprises heavy metal materials capable of producing large spin Hall effect, for example, tantalum (Ta), platinum (Pt), hafnium (Hf), tungsten (W), zirconium (Zr), or an alloy thereof.

In some embodiments, the thickness of the spin Hall metal layer 12 is smaller than about 10 nm.

In some embodiments, the free magnetic layer 14 may comprise a single layer or a composite layer.

In some embodiments, the free magnetic layer 14 may comprise a single layer of, for example, iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), cobalt iron boron (CoFeB) alloy, or cobalt iron (CoFe) alloy.

In some embodiments, the free magnetic layer 14 may comprise a composite layer of, for example, cobalt iron boron (CoFeB) alloy/tantalum (Ta)/cobalt iron boron (CoFeB) alloy or cobalt iron (CoFe) alloy/tantalum (Ta)/cobalt iron (CoFe).

In some embodiments, the thickness h 1 of the first area 20 of the free magnetic layer 14 is in a range from about 1 nm to about 3 nm.

In some embodiments, the barrier layer 16 may comprise magnesium oxide (MgO) or aluminum oxide (AlOx).

In some embodiments, the thickness h 3 of the first area 24 of the barrier layer 16 is in a range from about 0.5 nm to about 2 nm.

In some embodiments, the pinned layer 18 may comprise a single layer or a composite layer.

In some embodiments, the pinned layer 18 may comprise a single layer of, for example, cobalt iron (CoFe) alloy, cobalt iron boron (CoFeB) alloy, or cobalt nickel (CoNi) alloy.

In some embodiments, the pinned layer 18 may comprise a composite layer of, for example, cobalt (Co)/platinum (Pt), cobalt (Co)/nickel (Ni), or cobalt (Co)/palladium (Pd).

In the SOT MRAM 10 , the free magnetic layer 14 , the barrier layer 16 and the pinned layer 18 form a magnetic tunnel junction (MTJ) device 30 .

In this embodiment, the shape of the patterned pinned layer 18 and the first area 24 of the barrier layer 16 may comprise a circle, an ellipse, a square, or a rectangle, from a top view.

In some embodiments, the magnetic tunnel junction (MTJ) device 30 may be disposed at any position on the spin Hall metal layer 12 without limitation.

Referring to FIGS. 4A-4B , in accordance with one embodiment of the disclosure, a method for fabricating a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIGS. 4A-4B are cross-sectional views of the fabrication method of the SOT MRAM 10 .

As shown in FIG. 4A , a spin Hall metal layer 12 is provided.

Next, a free magnetic layer 14 is disposed on the spin Hall metal layer 12 . The free magnetic layer 14 comprises a first area 20 and a second area 22 . The second area 22 is located on both sides of the first area 20 .

Next, a barrier layer 16 is disposed on the free magnetic layer 14 . The barrier layer 16 comprises a first area 24 and a second area 26 . The second area 26 is located on both sides of the first area 24 . The first area 24 of the barrier layer 16 is disposed on the first area 20 of the free magnetic layer 14 . The second area 26 of the barrier layer 16 is disposed on the second area 22 of the free magnetic layer 14 .

Next, a pinned layer 18 is disposed on the barrier layer 16 .

Next, a patterned photoresist layer 28 is disposed on the pinned layer 18 .

Next, the pinned layer 18 is etched using the patterned photoresist layer 28 as a mask to expose the second area 26 of the barrier layer 16 .

Next, the second area 26 of the barrier layer 16 is continuously etched such that the thickness h 4 of the second area 26 is smaller than the thickness h 3 of the first area 24 of the barrier layer 16 .

The patterned photoresist layer 28 is then removed, as shown in FIG. 4B .

In some embodiments, the pinned layer 18 and the barrier layer 16 are etched by, for example, a plasma etching (PE) process, a reactive ion etching (RIE) process, an ion beam etching (IBE) process, or an inductively coupled plasma etching (ICPE) process.

In some embodiments, the pinned layer 18 and the barrier layer 16 are etched by, for example, a reactive ion etching (RIE) process.

In some embodiments, the etching gas used in the reactive ion etching (RIE) process may comprise carbon monoxide (CO), ammonia (NH 3 ), oxygen, hydrogen, or fluorine (F 2 ) and argon (Ar).

In some embodiments, the etch selectivity ratio between the pinned layer 18 and the barrier layer 16 is about 3:1 or above.

In this embodiment, the stop time of the etching process is controlled and determined by the difference in the etching rate between various materials and by simultaneously employing an end point detector (EPD) so that the second area 26 of the barrier layer 16 can maintain the desired thickness; that is, the thickness h 4 of the second area 26 is smaller than the thickness h 3 of the first area 24 of the barrier layer 16 .

Thus, the SOT MRAM 10 is completed.

Referring to FIG. 5 , in accordance with one embodiment of the disclosure, a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIG. 5 is a cross-sectional view of the SOT MRAM 10 .

In this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 , a free magnetic layer 14 , a barrier layer 16 , and a pinned layer 18 .

The free magnetic layer 14 is disposed on the spin Hall metal layer 12 . The free magnetic layer 14 comprises a first area 20 and a second area 22 . The second area 22 is located on both sides of the first area 20 . The thickness h 2 of the second area 22 is equal to the thickness h 1 of the first area 20 .

The barrier layer 16 is disposed on the first area 20 of the free magnetic layer 14 .

The pinned layer 18 is disposed on the barrier layer 16 .

The barrier layer 16 does not cover the second area 22 of the free magnetic layer 14 . That is, the thickness of the second area 26 of the barrier layer 16 is substantially zero in this embodiment.

In some embodiments, the spin Hall metal layer 12 comprises heavy metal materials capable of producing large spin Hall effect, for example, tantalum (Ta), platinum (Pt), hafnium (Hf), tungsten (W), zirconium (Zr), or an alloy thereof.

In some embodiments, the thickness of the spin Hall metal layer 12 is smaller than about 10 nm.

In some embodiments, the free magnetic layer 14 may comprise a single layer or a composite layer.

In some embodiments, the free magnetic layer 14 may comprise a single layer of, for example, iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), cobalt iron boron (CoFeB) alloy, or cobalt iron (CoFe) alloy.

In some embodiments, the free magnetic layer 14 may comprise a composite layer of, for example, cobalt iron boron (CoFeB) alloy/tantalum (Ta)/cobalt iron boron (CoFeB) alloy or cobalt iron (CoFe) alloy/tantalum (Ta)/cobalt iron (CoFe).

In some embodiments, the thickness h 1 of the first area 20 of the free magnetic layer 14 is in a range from about 1 nm to about 3 nm.

In some embodiments, the barrier layer 16 may comprise magnesium oxide (MgO) or aluminum oxide (AlOx).

In some embodiments, the thickness of the barrier layer 16 is in a range from about 0.5 nm to about 2 nm.

In some embodiments, the pinned layer 18 may comprise a single layer or a composite layer.

In some embodiments, the pinned layer 18 may comprise a single layer of, for example, cobalt iron (CoFe) alloy, cobalt iron boron (CoFeB) alloy, or cobalt nickel (CoNi) alloy.

In some embodiments, the pinned layer 18 may comprise a composite layer of, for example, cobalt (Co)/platinum (Pt), cobalt (Co)/nickel (Ni), or cobalt (Co)/palladium (Pd).

In the SOT MRAM 10 , the free magnetic layer 14 , the barrier layer 16 and the pinned layer 18 form a magnetic tunnel junction (MTJ) device 30 .

In this embodiment, the shape of the patterned pinned layer 18 and the barrier layer 16 may comprise a circle, an ellipse, a square, or a rectangle, from a top view.

In some embodiments, the magnetic tunnel junction (MTJ) device 30 may be disposed at any position on the spin Hall metal layer 12 without limitation.

Referring to FIGS. 6A-6B , in accordance with one embodiment of the disclosure, a method for fabricating a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIGS. 6A-6B are cross-sectional views of the fabrication method of the SOT MRAM 10 .

As shown in FIG. 6A , a spin Hall metal layer 12 is provided.

Next, a free magnetic layer 14 is disposed on the spin Hall metal layer 12 . The free magnetic layer 14 comprises a first area 20 and a second area 22 . The second area 22 is located on both sides of the first area 20 .

Next, a barrier layer 16 is disposed on the free magnetic layer 14 . The barrier layer 16 comprises a first area 24 and a second area 26 . The second area 26 is located on both sides of the first area 24 . The first area 24 of the barrier layer 16 is disposed on the first area 20 of the free magnetic layer 14 . The second area 26 of the barrier layer 16 is disposed on the second area 22 of the free magnetic layer 14 .

Next, a pinned layer 18 is disposed on the barrier layer 16 .

Next, a patterned photoresist layer 28 is disposed on the pinned layer 18 .

Next, the pinned layer 18 is etched using the patterned photoresist layer 28 as a mask to expose the second area 26 of the barrier layer 16 .

Next, the second area 26 of the barrier layer 16 is continuously etched until the second area 22 of the free magnetic layer 14 is exposed.

The patterned photoresist layer 28 is then removed, as shown in FIG. 6B .

In some embodiments, the pinned layer 18 and the barrier layer 16 are etched by, for example, a plasma etching (PE) process, a reactive ion etching (RIE) process, an ion beam etching (IBE) process, or an inductively coupled plasma etching (ICPE) process.

In some embodiments, the pinned layer 18 and the barrier layer 16 are etched by, for example, a reactive ion etching (RIE) process.

In some embodiments, the etching gas used in the reactive ion etching (RIE) process may comprise carbon monoxide (CO), ammonia (NH 3 ), oxygen, hydrogen, or fluorine (F 2 ) and argon (Ar).

In some embodiments, the etch selectivity ratio between the pinned layer 18 and the barrier layer 16 is about 3:1 or above.

In this embodiment, the stop time of the etching process is controlled and determined by the difference in the etching rate between various materials and by simultaneously employing an end point detector (EPD) so that the second area 22 of the free magnetic layer 14 can maintain the desired thickness; that is, the thickness h 2 of the second area 22 corresponds to the thickness h 1 of the first area 20 of the free magnetic layer 14 .

Thus, the SOT MRAM 10 is completed.

Referring to FIG. 7 , in accordance with one embodiment of the disclosure, a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIG. 7 is a cross-sectional view of the SOT MRAM 10 .

In this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 , a free magnetic layer 14 , a barrier layer 16 , and a pinned layer 18 .

The free magnetic layer 14 is disposed on the spin Hall metal layer 12 . The free magnetic layer 14 comprises a first area 20 and a second area 22 . The second area 22 is located on both sides of the first area 20 .

The barrier layer 16 is disposed on the first area 20 of the free magnetic layer 14 .

The pinned layer 18 is disposed on the barrier layer 16 .

The thickness h 2 of the second area 22 is smaller than the thickness h 1 of the first area 20 of the free magnetic layer 14 . For example, the thickness h 2 of the second area 22 is about half the thickness h 1 of the first area 20 of the free magnetic layer 14 .

In some embodiments, when the thickness h 2 of the second area 22 is smaller than the thickness h 1 of the first area 20 of the free magnetic layer 14 , the thickness h 2 of the second area 22 may be any proportionality to the thickness h 1 of the first area 20 of the free magnetic layer 14 .

In some embodiments, the spin Hall metal layer 12 comprises heavy metal materials capable of producing large spin Hall effect, for example, tantalum (Ta), platinum (Pt), hafnium (Hf), tungsten (W), zirconium (Zr), or an alloy thereof.

In some embodiments, the thickness of the spin Hall metal layer 12 is smaller than about 10 nm.

In some embodiments, the free magnetic layer 14 may comprise a single layer or a composite layer.

In some embodiments, the free magnetic layer 14 may comprise a single layer of, for example, iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), cobalt iron boron (CoFeB) alloy, or cobalt iron (CoFe) alloy.

In some embodiments, the free magnetic layer 14 may comprise a composite layer of, for example, cobalt iron boron (CoFeB) alloy/tantalum (Ta)/cobalt iron boron (CoFeB) alloy or cobalt iron (CoFe) alloy/tantalum (Ta)/cobalt iron (CoFe).

In some embodiments, the thickness h 1 of the first area 20 of the free magnetic layer 14 is in a range from about 1 nm to about 3 nm.

In some embodiments, the barrier layer 16 may comprise magnesium oxide (MgO) or aluminum oxide (AlOx).

In some embodiments, the thickness of the barrier layer 16 is in a range from about 0.5 nm to about 2 nm.

In some embodiments, the pinned layer 18 may comprise a single layer or a composite layer.

In some embodiments, the pinned layer 18 may comprise a single layer of, for example, cobalt iron (CoFe) alloy, cobalt iron boron (CoFeB) alloy, or cobalt nickel (CoNi) alloy.

In some embodiments, the pinned layer 18 may comprise a composite layer of, for example, cobalt (Co)/platinum (Pt), cobalt (Co)/nickel (Ni), or cobalt (Co)/palladium (Pd).

In the SOT MRAM 10 , the free magnetic layer 14 , the barrier layer 16 and the pinned layer 18 form a magnetic tunnel junction (MTJ) device 30 .

In this embodiment, the shape of the patterned pinned layer 18 , the barrier layer 16 and the first area 20 of the free magnetic layer 14 may comprise a circle, an ellipse, a square, or a rectangle, from a top view.

In some embodiments, the magnetic tunnel junction (MTJ) device 30 may be disposed at any position on the spin Hall metal layer 12 without limitation.

Referring to FIGS. 8A-8B , in accordance with one embodiment of the disclosure, a method for fabricating a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIGS. 8A-8B are cross-sectional views of the fabrication method of the SOT MRAM 10 .

As shown in FIG. 8A , a spin Hall metal layer 12 is provided.

Next, a free magnetic layer 14 is disposed on the spin Hall metal layer 12 . The free magnetic layer 14 comprises a first area 20 and a second area 22 . The second area 22 is located on both sides of the first area 20 .

Next, a barrier layer 16 is disposed on the free magnetic layer 14 . The barrier layer 16 comprises a first area 24 and a second area 26 . The second area 26 is located on both sides of the first area 24 . The first area 24 of the barrier layer 16 is disposed on the first area 20 of the free magnetic layer 14 . The second area 26 of the barrier layer 16 is disposed on the second area 22 of the free magnetic layer 14 .

Next, a pinned layer 18 is disposed on the barrier layer 16 .

Next, a patterned photoresist layer 28 is disposed on the pinned layer 18 .

Next, the pinned layer 18 is etched using the patterned photoresist layer 28 as a mask to expose the second area 26 of the barrier layer 16 .

Next, the second area 26 of the barrier layer 16 is continuously etched until the second area 22 of the free magnetic layer 14 is exposed. The second area 22 of the free magnetic layer 14 is then continuously etched such that the thickness h 2 of the second area 22 is smaller than the thickness h 1 of the first area 20 of the free magnetic layer 14 .

The patterned photoresist layer 28 is then removed, as shown in FIG. 8B .

In some embodiments, the pinned layer 18 , the barrier layer 16 and the free magnetic layer 14 are etched by, for example, a plasma etching (PE) process, a reactive ion etching (RIE) process, an ion beam etching (IBE) process, or an inductively coupled plasma etching (ICPE) process.

In some embodiments, the pinned layer 18 , the barrier layer 16 and the free magnetic layer 14 are etched by, for example, a reactive ion etching (RIE) process.

In some embodiments, the etching gas used in the reactive ion etching (RIE) process may comprise carbon monoxide (CO), ammonia (NH 3 ), oxygen, hydrogen, or fluorine (F 2 ) and argon (Ar).

In some embodiments, the etch selectivity ratio between the pinned layer 18 and the barrier layer 16 is about 3:1 or above.

In some embodiments, the etch selectivity ratio between the barrier layer 16 and the free magnetic layer 14 is about 1:3 or above.

In this embodiment, the stop time of the etching process is controlled and determined by the difference in the etching rate between various materials and by simultaneously employing an end point detector (EPD) so that the second area 22 of the free magnetic layer 14 can maintain the desired thickness; that is, the thickness h 2 of the second area 22 is smaller than the thickness h 1 of the first area 20 of the free magnetic layer 14 .

Thus, the SOT MRAM 10 is completed.

In some embodiments, the spin Hall metal layer 12 comprises heavy metal materials capable of producing large spin Hall effect, for example, tantalum (Ta), platinum (Pt), hafnium (Hf), tungsten (W), zirconium (Zr), or an alloy thereof.

In some embodiments, the thickness of the spin Hall metal layer 12 is smaller than about 10 nm.

In some embodiments, the free magnetic layer 14 may comprise a single layer or a composite layer.

In some embodiments, the free magnetic layer 14 may comprise a single layer of, for example, iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), cobalt iron boron (CoFeB) alloy, or cobalt iron (CoFe) alloy.

In some embodiments, the free magnetic layer 14 may comprise a composite layer of, for example, cobalt iron boron (CoFeB) alloy/tantalum (Ta)/cobalt iron boron (CoFeB) alloy or cobalt iron (CoFe) alloy/tantalum (Ta)/cobalt iron (CoFe).

In some embodiments, the thickness of the free magnetic layer 14 is in a range from about 1 nm to about 3 nm.

In some embodiments, the barrier layer 16 may comprise magnesium oxide (MgO) or aluminum oxide (AlOx).

In some embodiments, the thickness of the barrier layer 16 is in a range from about 0.5 nm to about 2 nm.

In some embodiments, the pinned layer 18 may comprise a single layer or a composite layer.

In some embodiments, the pinned layer 18 may comprise a single layer of, for example, cobalt iron (CoFe) alloy, cobalt iron boron (CoFeB) alloy, or cobalt nickel (CoNi) alloy.

In some embodiments, the pinned layer 18 may comprise a composite layer of, for example, cobalt (Co)/platinum (Pt), cobalt (Co)/nickel (Ni), or cobalt (Co)/palladium (Pd).

In the SOT MRAM 10 , the free magnetic layer 14 , the barrier layer 16 and the pinned layer 18 form a magnetic tunnel junction (MTJ) device 30 .

In this embodiment, the shape of the patterned pinned layer 18 , the barrier layer 16 and the free magnetic layer 14 may comprise a circle, an ellipse, a square, or a rectangle, from a top view.

In some embodiments, the magnetic tunnel junction (MTJ) device 30 may be disposed at any position on the spin Hall metal layer 12 without limitation.

Referring to FIG. 9 , in accordance with one embodiment of the disclosure, a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIG. 9 is a top view of the SOT MRAM 10 .

In this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is circular from a top view.

In this embodiment, the SOT MRAM 10 is arranged with a vertical magnetic tunnel junction (MTJ) device.

Referring to FIG. 10 , in accordance with one embodiment of the disclosure, a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIG. 10 is a top view of the SOT MRAM 10 .

In this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is elliptical from a top view.

In this embodiment, the SOT MRAM 10 is arranged with a horizontal magnetic tunnel junction (MTJ) device.

Referring to FIGS. 11A-11D , in accordance with one embodiment of the disclosure, a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIGS. 11A-11D are top views of the SOT MRAM 10 .

As shown in FIG. 11A , in this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is elliptical from a top view.

In this embodiment, the magnetic tunnel junction (MTJ) device 30 is disposed at a central position of the spin Hall metal layer 12 .

As shown in FIG. 11B , in this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is elliptical from a top view.

In this embodiment, the magnetic tunnel junction (MTJ) device 30 is disposed at an upper-left position of the spin Hall metal layer 12 .

As shown in FIG. 11C , in this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is elliptical from a top view.

In this embodiment, the magnetic tunnel junction (MTJ) device 30 is disposed at a lower-left position of the spin Hall metal layer 12 .

As shown in FIG. 11D , in this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is elliptical from a top view.

In this embodiment, the magnetic tunnel junction (MTJ) device 30 is disposed on the right side of the spin Hall metal layer 12 .

Referring to FIGS. 12A-12D , in accordance with one embodiment of the disclosure, a spin-orbit torque magnetoresistive random access memory (SOT MRAM) 10 is provided. FIGS. 12A-12D are top views of the SOT MRAM 10 .

As shown in FIG. 12A , in this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is circular from a top view.

In this embodiment, the magnetic tunnel junction (MTJ) device 30 is disposed at a central position of the spin Hall metal layer 12 .

As shown in FIG. 12B , in this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is circular from a top view.

In this embodiment, the magnetic tunnel junction (MTJ) device 30 is disposed at an upper-left position of the spin Hall metal layer 12 .

As shown in FIG. 12C , in this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is circular from a top view.

In this embodiment, the magnetic tunnel junction (MTJ) device 30 is disposed at a lower-left position of the spin Hall metal layer 12 .

As shown in FIG. 12D , in this embodiment, the SOT MRAM 10 comprises a spin Hall metal layer 12 and a magnetic tunnel junction (MTJ) device 30 .

The magnetic tunnel junction (MTJ) device 30 is disposed on the spin Hall metal layer 12 .

In this embodiment, the magnetic tunnel junction (MTJ) device 30 comprises a free magnetic layer, a barrier layer and a pinned layer (not shown).

In this embodiment, the shape of the magnetic tunnel junction (MTJ) device 30 is circular from a top view.

In this embodiment, the magnetic tunnel junction (MTJ) device 30 is disposed on the right side of the spin Hall metal layer 12 .

The Electrical Test of the SOT MRAM (1)

The electrical test was performed on the spin-orbit torque (SOT) MRAM 10 as shown in FIG. 1 .

By applying a magnetic field, the magnetic tunnel junction (MTJ) device 30 of the SOT structure was read and written to obtain a complete R-H loop, as shown in FIG. 13 . It represents that this process-optimized component can conduct normal read and write operations.

The Electrical Test of the SOT MRAM (2)

The electrical test was performed on the spin-orbit torque (SOT) MRAM 10 as shown in FIG. 1 .

By applying current on the spin Hall metal layer 12 and the spin Hall effect to generate the spin Hall current, the magnetic tunnel junction (MTJ) device 30 was read and written to obtain a complete R-J loop, as shown in FIG. 14 . It represents that this process-optimized component can conduct read and write operations by the SOT operation mechanism.

The present disclosure provides a top-pinned layer MTJ structure which is able to terminate an etching process at either any thickness position of a barrier layer or any thickness position of a bottom free magnetic layer, used as a component to develop the optimized process technology of the spin-orbit torque (SOT) MRAM. The uniformity of various layers can be achieved using etch selectivity ratios formed between various materials, for example, the etch selectivity ratio between the top pinned layer and the barrier oxide layer or between the barrier oxide layer and the free magnetic layer. In addition, a bottom ultra-thin heavy metal layer can be protected by the residual material of the barrier layer or the free magnetic layer. This component structure not only generates the splitting of the upper and lower spin currents by spin Hall effect, but also achieves the characteristics of the magnetic moment reversal of the free magnetic layer by the spin-orbit effect. Simultaneously, this component structure can overcome the problems that, due to an etching process, a bottom ultra-thin metal layer of a top-pinned layer MTJ of a conventional spin-orbit torque (SOT) structure is damaged which results in uneven operation characteristics and component failure. This process-optimized component structure can significantly improve the production yield of the spin-orbit torque (SOT) MRAM.

While the disclosure has been described by way of example and in terms of preferred embodiment, it is to be understood that the disclosure is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.