USPatent applicationPatented

Detachable gas injector used for semiconductor equipment

Granted 12 May 2020 · 1 office action

Life of the application

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Abstract

A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

Description

6 parts
›CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Taiwan Patent Application No. 106108613, filed on Mar. 15, 2017, the entire contents of which are herein expressly incorporated by reference.

›BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a detachable gas injector adaptable to semiconductor equipment, and more particularly to a detachable gas injector having gas output layers adaptable to a chemical vapor deposition (CVD) system.

2. Description of Related Art

The gas injector of conventional chemical vapor deposition (CVD) systems includes a connection channel constructed with connected plates having cavities. The diameter of the connection channel may be adjusted to regulate flow and uniformity.

The connected plates are commonly fixed by welding and thus cannot be detached for cleaning residues. Some composing parts cannot flexibly be replaced to regulate flow according to specific process requirements. Due to complexity of the connected plates and the connection channel, the conventional gas injector has high cost, and cleaning is time-consuming and laborious.

A need has thus arisen to propose a detachable gas injector that is capable of individually transferring reaction gases and being detached for cleaning or replacement.

›SUMMARY OF THE INVENTION

In view of the foregoing, it is an object of the embodiment of the present invention to provide a detachable gas injector adaptable to chemical vapor deposition (CVD) system of semiconductor process that is capable of individually transferring reaction gases through layers such that the gasses can be evenly injected to a chamber, thus improving quality and yield of thin film deposition.

According to one embodiment, a detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The top cover has a first air intake passage, a second air intake passage and a third air intake passage for inputting a first reaction gas, a second reaction gas and a third reaction gas respectively, the top cover having a convex part disposed at bottom of the top cover, through which the third air intake passage passes. The hollow sleeve receives the convex part, a top surface of the hollow sleeve being connected to a bottom surface of the top cover, thus forming a first transmission passage between an inner side wall of the hollow sleeve and an outer side wall of the convex part, the first transmission passage communicating with the first air intake passage. The top housing has a center hole for accommodating the hollow sleeve, a cover surface of the top cover being disposed on a top surface of the top housing, thus forming a second transmission passage between an outer side wall of the hollow sleeve and an inner side wall of the center hole, the second transmission passage communicating with the second air intake passage. The gas output unit is connected to a bottom surface of the hollow sleeve, the gas output unit including a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer for outputting the second reaction gas, the first reaction gas and the third reaction gas respectively.

›BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows a cross-sectional view illustrating a detachable gas injector adaptable to semiconductor equipment according to a first embodiment of the present invention;

FIG. 1B shows an exploded view illustrating the detachable gas injector adaptable to semiconductor equipment according to the first embodiment of the present invention;

FIG. 1C shows a gas flow diagram illustrating the detachable gas injector adaptable to semiconductor equipment according to the first embodiment of the present invention;

FIG. 1D shows a perspective view illustrating the first partition plate according to one embodiment of the present invention;

FIG. 1E shows a perspective view illustrating the first partition plate according to another embodiment of the present invention;

FIG. 1F shows a perspective view illustrating the flow guide cover according to one embodiment of the present invention;

FIG. 1G shows a perspective view illustrating a bolt according to one embodiment of the present invention;

FIG. 2A shows a cross-sectional view illustrating a detachable gas injector adaptable to semiconductor equipment according to a second embodiment of the present invention;

FIG. 2B shows an exploded view illustrating the detachable gas injector adaptable to semiconductor equipment according to the second embodiment of the present invention; and

FIG. 2C shows a gas flow diagram illustrating the detachable gas injector adaptable to semiconductor equipment according to the second embodiment of the present invention.

›DETAILED DESCRIPTION OF THE INVENTION · 1 of 2

FIG. 1A , FIG. 1B and FIG. 1C respectively show a cross-sectional view, an exploded view, and a gas flow diagram of a detachable gas injector 100 adaptable to semiconductor equipment according to a first embodiment of the present invention. The detachable gas injector 100 of the embodiment may include a top cover 110 , a hollow sleeve 120 , a top housing 130 and a gas output unit 140 . The top cover 110 may include a first air intake passage 114 A, a second air intake passage 114 B and a third air intake passage 114 C configured to input first reaction gas, second reaction gas and third reaction gas, respectively. The top cover 110 may also include a convex part 112 disposed at bottom of the top cover 110 , through which the third air intake passage 114 C passes. The hollow sleeve 120 receives the convex part 112 . A top surface of the hollow sleeve 120 is connected to a bottom surface of the top cover 110 , thus forming a first transmission passage 160 A between an inner side wall of the hollow sleeve 120 and an outer side wall of the convex part 112 , the first transmission passage 160 A communicating with the first air intake passage 114 A. The top housing 130 has a center hole 132 for accommodating the hollow sleeve 120 . A cover surface of the top cover 110 is disposed on a top surface of the top housing 130 , thus forming a second transmission passage 160 B between an outer side wall of the hollow sleeve 120 and an inner side wall of the center hole 132 , the second transmission passage 160 B communicating with the second air intake passage 114 B. The gas output unit 140 is connected to a bottom surface of the hollow sleeve 120 . The gas output unit 140 may include a first partition plate 141 and a second partition plate 142 , which form a first gas output layer 143 A, a second gas output layer 143 B and a third gas output layer 143 C, from top to bottom, configured to output the second reaction gas 150 B, the first reaction gas 150 A and the third reaction gas 150 C, respectively.

In the embodiment, the top cover 110 , the hollow sleeve 120 , the top housing 130 and the gas output unit 140 may be assembled to form the gas injector 100 , and may be detached for replacement or cleaning. The top cover 110 , the hollow sleeve 120 , the top housing 130 and the gas output unit 140 may be fixed, for example, by fastening, plugging or other suitable methods.

A first flow guide plate 162 A disposed across the first transmission passage 160 A has evenly distributed first flow guide holes 164 A configured to evenly diffuse the first reaction gas 150 A (from the first air intake passage 114 A) into the first transmission passage 160 A. Similarly, a second flow guide plate 162 B disposed across the second transmission passage 160 B has evenly distributed second flow guide holes 164 B configured to evenly diffuse the second reaction gas 150 B (from the second air intake passage 114 B) into the second transmission passage 160 B.

In one embodiment, the top housing 130 may include a cooling unit 134 configured to circulate cooling liquid 136 around the center hole 132 , thus providing a temperature control scheme for conditioning temperature of the top cover 110 , the hollow sleeve 120 and the top housing 130 .

As shown in FIG. 1C , the first partition plate 141 of the gas output unit 140 is connected to a bottom surface of the hollow sleeve 120 , which is lower than a bottom surface of the top housing 130 . The first gas output layer 143 A is disposed between a top surface of the first partition plate 141 and a bottom surface of the top housing 130 .

The second partition plate 142 is connected to a bottom surface of the convex part 112 of the top cover 110 , which is lower than the bottom surface of the hollow sleeve 120 . The second gas output layer 143 B is disposed between a top surface of the second partition plate 142 and a bottom surface of the first partition plate 141 .

FIG. 1D shows a perspective view illustrating the first partition plate 141 according to one embodiment of the present invention. The first partition plate 141 may include flow guide blocks 141 A radially and evenly disposed around a center area of the first partition plate 141 , thus forming flow guide passages 141 C for evenly injecting the second reaction gas 150 B.

FIG. 1E shows a perspective view illustrating the first partition plate 141 according to another embodiment of the present invention. The first partition plate 141 may include flow guide plates 141 B radially and evenly disposed around a center area of the first partition plate 141 , thus forming flow guide passages 141 C for evenly injecting the second reaction gas 150 B. It is appreciated that the second partition plate 142 may be made similar to the first partition plate 141 as shown in FIG. 1D or FIG. 1E .

Referring back to FIG. 1B and FIG. 1C , the gas output unit 140 may further include a flow guide cover 144 disposed at an output of the third air intake passage 114 C. A top surface of the flow guide cover 144 is connected to a bottom surface of the second partition plate 142 for guiding the third reaction gas 150 C. Specifically, the flow guide cover 144 is embedded in a heat spreader. The third gas output layer 143 C is disposed between a bottom surface of the second partition plate 142 and a top surface of the heat spreader 170 .

In the embodiment, the first partition plate 141 , the second partition plate 142 and the flow guide cover 144 may be assembled to form the gas output unit 140 . The first partition plate 141 , the second partition plate 142 and the flow guide cover 144 may be fixed, for example, by fastening, plugging or other suitable methods.

FIG. 1F shows a perspective view illustrating the flow guide cover 144 according to one embodiment of the present invention. The flow guide cover 144 may have flow guide grooves 144 A for evenly transferring the third reaction gas 150 C to the third gas output layer 143 C, and finally evenly be injected to a chamber.

›DETAILED DESCRIPTION OF THE INVENTION · 2 of 2

FIG. 1G shows a perspective view illustrating a bolt 145 included in the gas output unit 140 and disposed at an output of the third air intake passage 114 C according to one embodiment of the present invention. The bolt 145 has a through hole 145 A for providing vacuum, thus preventing residual gas from entering into other passages. Accordingly, the bolt 145 and the flow guide cover 144 may be configured by a user according to different reaction gases.

FIG. 2A , FIG. 2B and FIG. 2C respectively show a cross-sectional view, an exploded view, and a gas flow diagram of a detachable gas injector 100 adaptable to semiconductor equipment according to a second embodiment of the present invention. The detachable gas injector 100 of the embodiment may include a top cover 110 , a first hollow sleeve 120 A, a second hollow sleeve 120 B, a top housing 130 and a gas output unit 140 . The top cover 110 may include a first air intake passage 114 A, a second air intake passage 114 B and a third air intake passage 114 C configured to input first reaction gas, second reaction gas and third reaction gas, respectively. The top cover 110 may also include a convex part 112 disposed at bottom of the top cover 110 , through which the third air intake passage 114 C passes. The first hollow sleeve 120 A receives the convex part 112 . A top surface of the first hollow sleeve 120 A is connected to a bottom surface of the top cover 110 , thus forming a first transmission passage 160 A between an inner side wall of the first hollow sleeve 120 A and an outer side wall of the convex part 112 , the first transmission passage 160 A communicating with the first air intake passage 114 A. The second hollow sleeve 120 B receives the first hollow sleeve 120 A. A top surface of the second hollow sleeve 112 B is connected to a bottom surface of the top cover 110 , thus forming a second transmission passage 160 B between an inner side wall of the second hollow sleeve 120 B and an outer side wall of the first hollow sleeve 120 A, the second transmission passage 160 B communicating with the second air intake passage 114 B. The top housing 130 has a center hole 132 for accommodating the second hollow sleeve 120 B. A cover surface of the top cover 110 is disposed on a top surface of the top housing 130 . The gas output unit 140 is connected to bottom surfaces of the first hollow sleeve 120 A and the second hollow sleeve 120 B. The gas output unit 140 may include a first partition plate 141 and a second partition plate 142 , which form a first gas output layer 143 A, a second gas output layer 143 B and a third gas output layer 143 C, from top to bottom, configured to output the second reaction gas 150 B, the first reaction gas 150 A and the third reaction gas 150 C, respectively.

Specifically, in the embodiment, the first partition plate 141 of the gas output unit 140 is connected to a bottom surface of the first hollow sleeve 120 A, which is lower than a bottom surface of the top housing 130 . The second hollow sleeve 120 B and the top housing 130 have a common bottom surface. The first gas output layer 143 A is disposed between a top surface of the first partition plate 141 and the common bottom surface of the second hollow sleeve 120 B and the top housing 130 .

The second partition plate 142 is connected to a bottom surface of the convex part 112 of the top cover 110 , which is lower than a bottom surface of the first hollow sleeve 120 A. The second gas output layer 143 B is disposed between a top surface of the second partition plate 142 and a bottom surface of the first partition plate 141 . Other aspects of the gas injector 100 of the embodiment are similar to the previous embodiment, and details of the present embodiment are thus omitted for brevity.

Although specific embodiments have been illustrated and described, it will be appreciated by those skilled in the art that various modifications may be made without departing from the scope of the present invention, which is intended to be limited solely by the appended claims.

Claims as granted

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Classifications

5 codes
IPC · International Patent Classification
Section C — Chemistry; metallurgy
  • C23C16/455
  • C23C16/40
Section H — Electricity
  • H01J37/32
  • H10P14/60
  • H10P72/00

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Pendency
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791 days filing → grant
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Examiner
Rudy Zervigon
art unit 1716 · TC 1700
Citations: 54 back · 1 forward

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