Power semiconductor module and electric power conversion device

An electric power conversion device according to the present embodiment can be applied to a hybrid car or a pure electric car. A vehicle drive inverter device converts DC power supplied from a vehicle-mounted battery or a vehicle-mounted generating device configuring a vehicle-mounted power supply to predetermined AC power, and supplies the obtained AC power to a vehicle drive motor to control drive of the vehicle drive motor. In addition, since the vehicle drive motor has also a function as a generator, the vehicle drive inverter device has also a function of converting AC power generated by the vehicle drive motor to DC power, depending on an operation mode. Incidentally, the configuration of the present embodiment is optimal as a vehicle drive electric power conversion device for a car or a truck, and can also be applied to other electric power conversion devices, for example, an electric power conversion device for a train, a ship, or an airplane, and further to an industrial electric power conversion device used as a control device for a motor for driving factory equipment, or to a household use electric power conversion device used for a control device for a motor for driving a household solar power generation system or a household appliance.

An electric circuit configuration of an inverter device 140 will be described with reference to FIG. 1 .

An inverter circuit 144 is provided with three upper and lower arms series circuits 150 each including an IGBT 328 and a diode 156 operating as an upper arm, and an IGBT 330 and a diode 166 operating as a lower arm, for three phases (U phase, V phase, W phase) corresponding to respective phase winding lines of armature winding lines of a motor generator 192 . Each upper and lower arms series circuit 150 is connected to an AC power line (AC bus bar) 186 to the motor generator 192 through an AC terminal 159 and an AC connector 188 from a midpoint portion (intermediate electrode 169 ) of the circuit.

A collector electrode 153 of the IGBT 328 of the upper arm is electrically connected to an electrode of a capacitor in a positive electrode side of a capacitor module 500 via a positive electrode terminal (P terminal) 157 , and an emitter electrode of the IGBT 330 of the lower arm is electrically connected to an electrode of the capacitor in a negative electrode side of the capacitor module 500 via a negative electrode terminal (N terminal) 158 .

The IGBT 328 includes the collector electrode 153 , a gate electrode 154 , and an emitter electrode for signal 155 . In addition, the IGBT 330 includes a collector electrode 163 , a gate electrode 164 , and an emitter electrode for signal 165 . The diode 156 is electrically connected in parallel with the IGBT 328 . In addition, the diode 166 is electrically connected in parallel with the IGBT 330 . As a switching power semiconductor device, a metal oxide semiconductor field effect transistor (MOSFET) may be used, and in this case, the diode 156 and the diode 166 are not necessary. The capacitor module 500 is electrically connected to a positive electrode side capacitor terminal 506 and a negative electrode side capacitor terminal 504 via a DC connector 138 . Incidentally, the inverter device 140 is connected to the positive electrode side capacitor terminal 506 via a DC positive electrode terminal 314 , and connected to the negative electrode side capacitor terminal 504 via a DC negative electrode terminal 316 .

Incidentally, the gate electrode 154 and the emitter electrode for signal 155 in FIG. 1 correspond to a signal connection terminal 327 U in FIGS. 2( a ) to 2( d ) described later. The gate electrode 164 and the emitter electrode 165 in FIG. 1 correspond to a signal connection terminal 327 L in FIGS. 2( a ) to 2( d ) . The positive electrode terminal 157 in FIG. 1 is the same as a positive electrode side terminal 315 D in FIGS. 2( a ) to 2( d ) . The negative electrode terminal 158 in FIG. 1 is the same as a negative electrode side terminal 319 D in FIGS. 2( a ) to 2( d ) . The AC terminal 159 in FIG. 1 is the same as an AC terminal 320 D in FIGS. 2( a ) to 2( d ) .

Subsequently, an embodiment will be described of the power semiconductor module 300 according to the present embodiment and a double side cooling type electric power conversion device 299 using the module with reference to FIGS. 2( a ) to 2( d ) , FIG. 3 , and FIG. 4 .

FIG. 2( a ) is an exterior perspective view illustrating a schematic configuration of the power semiconductor module 300 according to the present embodiment. FIG. 2( b ) is a sectional view in a cross section 2 B of FIG. 2( a ) . FIG. 2( c ) is an exploded sectional view illustrating a process of assembling the power semiconductor module 300 . FIG. 2( d ) is a circuit configuration diagram corresponding to FIG. 2( c ) .

The power semiconductor module 300 includes a circuit body 302 incorporating a power semiconductor device, a case frame 304 , and a heat radiation base 307 . The case frame 304 forms an accommodation space 306 for accommodating the circuit body 302 , and an opening 306 a connected to the accommodation space 306 .

The case frame 304 includes a heat radiation portion 305 a in which a fin is formed, on a surface opposite to a surface on which the opening 306 a is formed. The fin heat radiation portion 305 a is disposed to face the accommodation space 306 . In addition, the case frame 304 includes a terminal through hole 311 formed at a side portion to the heat radiation portion 305 a . The terminal through hole 311 is connected to the accommodation space 306 , and allows a terminal of the circuit body 302 disposed in the accommodation space 306 to pass through. An O-ring groove 312 is formed around the terminal through hole 311 . The O-ring groove 312 is formed on a sealing surface 309 formed to surround the terminal through hole 311 .

The circuit body 302 is accommodated in the accommodation space 306 of the case frame 304 , sandwiching an insulating member 333 between the circuit body 302 and the case frame 304 . The circuit body 302 includes the IGBTs 328 , 330 , and the diodes 156 , 166 , as power semiconductor devices. These power semiconductor devices are provided at a position facing the heat radiation portion 305 a , and subjected to heat radiation by a refrigerant flowing between the fins of the heat radiation portion 305 a.

A conductor portion 315 is disposed on one surface side of the power semiconductor devices 328 , 156 , and a conductor portion 318 is disposed on the other surface side. A conductor portion 320 is disposed on one surface side of the power semiconductor devices 330 , 166 , and a conductor portion 319 is disposed on the other surface side. The IGBT 328 and the diode 156 configuring an upper arm circuit are metal-bonded to be sandwiched in parallel by the conductor portion 315 and 318 . The IGBT 330 and the diode 166 configuring a lower arm circuit are metal-bonded to be sandwiched in parallel by the conductor portion 320 and 319 .

The power semiconductor devices 328 , 330 , 156 , 166 and the conductor portions 315 , 318 , 319 , 320 are sealed with resin sealing material 348 . Portions of the conductor portions 315 , 320 , 319 protrude from the resin sealing material 348 , and respectively form the positive electrode side terminal 315 D, the AC terminal 320 D, the negative electrode side terminal 319 D. In addition, the signal connection terminals 327 U, 327 L also protrude from the resin sealing material 348 . These terminals are formed to protrude from the resin sealing material 348 , and further to bend at a substantially right angle. Tips of the bent terminals pass through the terminal through hole 311 and extend to the outside of the case frame 304 .

In a state in which the circuit body 302 is accommodated in the accommodation space 306 , the opening 306 a of the case frame 304 is closed by the heat radiation base 307 . On the heat radiation base 307 , in a region facing the power semiconductor device, a heat radiation portion 305 b including a fin is formed. Between the heat radiation base 307 and the circuit body 302 , the insulating member 333 is disposed. The heat radiation base 307 is bonded to the case frame 304 with metal bonding or the like. Thus, an opening 306 a side of the accommodation space 306 is sealed. The heat radiation base 307 functions as a lid closing the opening 306 a of the case frame 304 , and also functions as a heat radiation portion for transmitting heat generation of the power semiconductor device to the refrigerant.

In a state in which the heat radiation base 307 is bonded to the case frame 304 , a reference surface 308 is formed at a side portion to the heat radiation portion 305 b . The reference surface 308 is a flat surface formed on a surface on one side of the case frame 304 . The reference surface 308 is provided substantially in parallel with the sealing surface 309 . The reference surface 308 is formed such that, when projection is performed from a direction vertical to the in-plane direction of the reference surface 308 , a projection of the reference surface 308 and a projection of the sealing surface 309 overlap each other. The reference surface 308 and the sealing surface 309 are disposed to face each other on both sides with respect to the case frame 304 . In this way, the reference surface 308 and the sealing surface 309 overlap each other in the vertical direction, whereby the reference surface 308 functions as a surface that receives a load to press an O-ring disposed in the O-ring groove 312 .

In addition, in the present example, a bonding portion between the heat radiation base 307 and the case frame 304 is provided in the reference surface 308 overlapping with the sealing surface 309 in the vertical direction. For that reason, the sealing surface 309 functions as a surface that receives a bonding load of when the heat radiation base 307 is bonded to the case frame 304 . The sealing surface 309 is formed with high rigidity, to hold a sealing member by a member such as a lid 313 described later with the O-ring groove 312 . Therefore, the sealing surface 309 can firmly support the load during bonding of the heat radiation base 307 .

In addition, since a portion interfering with a bonding tool is not provided near a bonding portion and the reference surface 308 is flat, bonding work can be easily performed also during work of bonding the heat radiation base 307 and the case frame 304 together by using a bonding tool. In addition, since there is no need to provide an excessive space to avoid interference with the bonding tool, area saving and miniaturization of the entire power semiconductor module can be achieved.

In the heat radiation base 307 , the thickness of the member can be changed between a region where the fin 305 b is formed and a region near the bonding portion to the case frame 304 formed around the fin 305 b region. For example, the thickness of the heat radiation base in the region near the bonding portion to the case frame 304 is made thinner than the thickness of the heat radiation base in the region where the fin 305 b is formed, whereby heat radiation, manufacturing assemblability, and reliability can be improved.

The fins 305 a and 305 b are each formed from a member having electric conductivity, for example, Cu, Cu alloy, a composite material such as Cu—C, Cu—CuO, or Al, Al alloy, a composite material such as AlSiC, Al—C.

As a sealing resin material 348 to be used for the circuit body 302 , for example, resin can be used based on a novolac-based, a polyfunctional-based, a biphenyl-based epoxy resin system. The sealing resin material 348 can contain ceramics such as SiO2, Al2O3, AlN, and BN, gel, and rubber, so that the coefficient of thermal expansion can be brought closer to that of the conductor portion. Thus, a difference in the coefficient of thermal expansion between members can be reduced, and thermal stress generated by temperature rise during use is significantly reduced, so that a lifetime of the power semiconductor module can be extended.

As a metal bonding agent for bonding the power semiconductor device and the conductor portion together, it is possible to use, for example, a Sn alloy-based soft soldering material (solder), a hard soldering material such as Al alloy or Cu alloy, or a metal sintered material using metal nanoparticles or metal microparticles.

FIG. 3 is an exploded sectional view illustrating a process of assembling the power semiconductor module 300 to a flow path forming body 400 . The flow path forming body 400 includes a flow path space 405 , and a flow path opening 403 connected to the flow path space 405 . The power semiconductor module 300 passes through the flow path opening 403 , and is accommodated in the flow path space 405 .

In the flow path forming body 400 , a module receiving surface 406 is formed in the flow path space 405 . The module receiving surface 406 is in contact with the reference surface 308 of the power semiconductor module 300 . In addition, the flow path forming body 400 forms a space that is recessed toward the bottom side from the module receiving surface 406 and in which the fin 305 b is disposed. The module receiving surface 406 is formed up to the vicinity of the fin 305 b forming region, whereby the flow path forming body 400 can suppress a bypass flow of the refrigerant flowing between the fins 305 b of the power semiconductor module 300 . For that reason, the structure of the flow path space 405 of the flow path forming body 400 is preferably designed along the shape of in particular the fin 305 b of the power semiconductor module 300 .

In a state in which the power semiconductor module 300 is accommodated, the flow path opening 403 is closed by a lid 413 . The lid 413 seals the flow path space 405 by an O-ring disposed in an O-ring groove 404 formed on the flow path forming body 400 . The lid 413 is disposed at a side on which the sealing surface 309 and the heat radiation portion 305 a are formed, with respect to the power semiconductor module 300 . Between the fins formed in the heat radiation portion 305 a , and in a space surrounded by the lid 413 , the refrigerant is circulated, similarly to the heat radiation portion 305 b side.

In the lid 413 , a terminal opening 413 A is formed. The terminal of the power semiconductor module 300 passes through the terminal opening 413 A. The lid 413 presses the power semiconductor module 300 to the flow path forming body 400 side, sandwiching the O-ring disposed in the O-ring groove 312 . Being sealed by the O-ring sandwiched between the lid 413 and the O-ring groove 312 , the refrigerant flowing in a region of the heat radiation portion 305 a does not leak into the power semiconductor module 300 from the terminal through hole 311 .

The power semiconductor module 300 pressed by the lid 413 is supported by the module receiving surface 406 of the flow path forming body 406 . In this way, the power semiconductor module 300 is pressed and fixed in a form of being sandwiched between the flow path forming body 400 and the lid 413 . According to the configuration of the power semiconductor module of the present embodiment, it is possible to simultaneously realize a sealing structure in the lid 413 side and a fixed disposition structure on a contact surface between the reference surface 308 and the module receiving surface 406 . Therefore, physical structure miniaturization of the entire electric power conversion device can be achieved.

FIG. 4 is a sectional view illustrating a configuration example of the electric power conversion device 299 to which a flow path structure of FIG. 3 is applied. The electric power conversion device 299 includes the flow path forming body 400 that is a housing integrally formed with a cooling flow path, a mold bus bar 700 , the power semiconductor module 300 , the capacitor module 500 , and a control board 200 . The flow path forming body 400 also serving as the housing includes an opening into which the power semiconductor module 300 is inserted, and an opening into which the capacitor module 500 is inserted.

In the mold bus bar 700 , a DC bus bar 710 and an AC bus bar 709 are sealed with a resin material having insulating properties. The DC bus bar 710 electrically connects the capacitor module 500 and the power semiconductor module 300 together. The DC bus bar 710 has a structure in which a positive electrode side bus bar and a negative electrode side bus bar are layered. Currents respectively having polarities opposite to each other flow through the positive and negative electrode bus bars, and low inductance is achieved due to magnetic field cancellation effect.

The mold bus bar 700 is disposed to face the power semiconductor module 300 sandwiching the lid 413 . The mold bus bar 700 is disposed on the same side with respect to the capacitor module 500 and the power semiconductor module 300 .

The electric power conversion device of the present embodiment is capable of simultaneously cooling the power semiconductor module 300 and the capacitor module 500 with the flow path forming body 400 also serving as the housing. In addition, by installing the mold bus bar 700 directly to the flow path forming body 400 , it is also possible to cool the mold bus bar 700 . In addition, the power semiconductor module 300 and the capacitor module 500 are disposed on the same layer, so that low height of the electric power conversion device can be achieved.

A power semiconductor module 300 and an electric power conversion device 299 in Example 2 will be described with reference to FIGS. 5( a ) to 5( c ) . Common components are denoted by the same reference numerals as those of Example 1, and detailed descriptions thereof will be omitted.

FIG. 5( a ) is an exploded perspective view of the power semiconductor module 300 . FIG. 5( b ) is an exploded sectional view. FIG. 5( c ) is a sectional view illustrating a process of assembling to a flow path forming body 400 . A difference from the structure described in Example 1 is that Example 2 has a structure in which two terminal through holes 311 are provided in a case frame 304 , and module terminals protrude from both sides sandwiching a heat radiation portion 305 a.

As illustrated in FIG. 5( a ) , a positive electrode side terminal 315 D and a negative electrode side terminal 319 D through which DC current flows protrude from one side of the power semiconductor module 300 , and an AC terminal 320 D through which AC current flows protrudes from the other side. For example, the positive electrode side terminal 315 D and the negative electrode side terminal 319 D are disposed on a side on which a capacitor module 500 is disposed with respect to the power semiconductor module 300 , whereby reduction of wiring inductance can be achieved.

In addition, the two terminal through holes 311 are provided, so that two O-ring grooves 312 are formed. Further, two terminal openings 413 A are formed of a lid 413 . Sealing surfaces 309 are respectively formed at both sides to the heat radiation portion 305 a.

In addition, in the lid 413 used in the present example, corresponding to a protruding length of a fin 305 a , a recess portion is formed on the fin 305 a side. By designing the recess portion to match the shape of the fin 305 a , a bypass flow flowing through the fin tip and a fin side portion can be suppressed. Thus, cooling performance is improved, and miniaturization of the power semiconductor module can be achieved.

According to the power semiconductor module of the present example and the electric power conversion device using the power semiconductor module, due to a structure to output the power module terminal from both sides of the heat radiation portion, a degree of freedom can be improved of the dimension of the terminal through hole and disposition of the power module terminal. Thus, effects can be achieved, such as miniaturization and low height of the entire electric power conversion device, reduction of wiring inductance, suppression of magnetic coupling between a signal terminal and a DC terminal.