Optoelectronic semiconductor component comprising an optoelectronic semiconductor chip being partly embedded in a shaped body serving as support and method for producing an optoelectronic semiconductor component comprising an optoelectronic semiconductor chip being partly embedded in a shaped body serving as support

This patent application is a national phase filing under section 371 of PCT/EP2014/068001, filed Aug. 25, 2014, which claims the priority of German patent application 10 2013 110 733.8, filed Sep. 27, 2013, each of which is incorporated herein by reference in its entirety.

Embodiments of the invention relate to an optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component.

An optoelectronic semiconductor component with an optoelectronic semiconductor chip is specified. In particular embodiments, the optoelectronic semiconductor component is a radiation-emitting semiconductor component that takes the form of a side emitter.

Furthermore, a method for producing an optoelectronic semiconductor component is specified. In particular embodiments, the method is based on so-called CiF technology (CiF: chip in a frame), the optoelectronic semiconductor chip being partly embedded into a shaped body which serves as support.

Embodiments of the present application specify a mechanically stable optoelectronic semiconductor component that is suitable for lateral emission or absorption of radiation. Further embodiments specify a method for producing a mechanically stable optoelectronic semiconductor component that is suitable for lateral emission or absorption of radiation.

According to at least one embodiment, the optoelectronic semiconductor component includes an optoelectronic semiconductor chip with a radiation passage face, with several lateral faces, which are arranged transversely in relation to the radiation passage face, and with a rear surface arranged opposite the radiation passage face. In particular, the radiation passage face is characterized in that a large part of the radiation that, for example, is generated in operation by the optoelectronic semiconductor chip passes through it. In particular, the radiation passage face of the semiconductor chip forms a part of a radiation-passage-side surface of the semiconductor component. The semiconductor component on the radiation passage side is preferentially bounded toward the outside by the radiation-passage-side surface.

The optoelectronic semiconductor element preferentially includes a shaped body which is formed from a molding compound. The molding compound may contain a plastic material, for example, a thermosetting plastic material such as epoxide or a silicone. Furthermore, the molding compound may comprise a filler, for example, amorphous silicon dioxide, boron nitride or aluminum oxide. In particular, the proportion of the filler in the molding compound amounts to at least 50 percent by weight. Moreover, the molding compound may contain additives such as white pigments or carbon black, which impart to the shaped body a characteristic color such as white or black. In particular, the proportion of the additives in the molding compound amounts to 10 to 15 percent by weight.

According to at least one embodiment, the optoelectronic semiconductor chip is partly embedded into the shaped body, in which case the molding compound at least partly covers at least two lateral faces and the rear surface of the semiconductor chip. In particular, the covered lateral faces are arranged to be opposing. Advantageously, the shaped body forms a support for the optoelectronic semiconductor chip. The shaped body accordingly contributes to the mechanical stability of the optoelectronic semiconductor component. The shaped body may comprise a radiation-passage-side main area, a rear main area and several lateral faces. In particular, the shaped body is bounded on the radiation passage side of the semiconductor component by the radiation-passage-side main area, on the rear side by the rear main area, and peripherally by the lateral faces. In particular, the radiation-passage-side main area of the shaped body forms a part of the radiation-passage-side surface of the semiconductor component.

Moreover, the optoelectronic semiconductor component may comprise a first contact layer and a second contact layer which are arranged on the shaped body and are provided for electrical connection of the semiconductor chip. In particular, the optoelectronic semiconductor chip may comprise a first and a second electrical contact, which are provided for electrical connection of the semiconductor chip, the first electrical contact is connected to the first contact layer, and the second electrical contact is connected to the second contact layer. In particular, the contact layers enable a wireless contacting of the semiconductor chip.

Moreover, the optoelectronic semiconductor component may comprise a mounting face which is arranged transversely in relation to the radiation passage face of the semiconductor chip and is provided for mounting the semiconductor component. As a result of this, the semiconductor component takes the form, in particular, of a side emitter if the semiconductor chip is a radiation-emitting semiconductor chip. A side emitter of such a type is suitable, in particular, for lateral coupling of light into a light guide of a display.

For example, the optoelectronic semiconductor component with the mounting face may be arranged on a connection support. For fastening the semiconductor component, the latter may be provided with a connecting means, in particular a solder, along edges of the mounting face. The connecting means may be arranged on the radiation-passage-side surface, on two opposing lateral faces which, in particular, are arranged transversely in relation to the connection support, and on a rear surface of the optoelectronic semiconductor component. Moreover, the connecting means is preferentially arranged between the mounting face and the connection support. The connecting means preferentially covers the contact layers at least partly, so that the latter are electrically connected to the connection support by the connecting means. In particular, proceeding from the radiation-passage-side surface, the contact layers extend along the stated faces via the lateral faces as far as the rear surface of the optoelectronic semiconductor component. Moreover, the contact layers may extend onto the mounting face, so that the semiconductor component can also be electrically connected to the mounting face.

According to a preferred embodiment, the shaped body includes a projecting portion which is arranged on a lateral face of the semiconductor chip and comprises a first and a second dimension which are each larger than a smallest dimension of the semiconductor chip. In particular, the shaped body comprises a further projecting portion which is arranged opposite the other portion and is located on a further lateral face of the semiconductor chip. Advantageously, the further portion also comprises a first and a second dimension which are each larger than a smallest dimension of the semiconductor chip. In particular, the first and the second dimension of the portion are determined along a first and second principal direction of extent, a plane in which the mounting face is arranged being spanned by the two principal directions of extent. By means of the two portions, the optoelectronic semiconductor component can be supported on the mounting face.

According to at least one embodiment of the optoelectronic component, the first and the second dimension of the projecting portion are at least twice as large as the smallest dimension of the semiconductor chip. This preferentially also holds for the further portion. For example, the smallest dimension of the semiconductor chip may be a thickness of the semiconductor chip measured parallel to the first principal direction of extent, which thickness amounts, in particular, to between 0.1 mm and 0.2 mm. Moreover, the first dimension of the projecting portion may amount to between 0.2 mm and 2 mm. Furthermore, the second dimension may amount to between 0.3 mm and 3 mm.

In addition, in an advantageous configuration of the projecting portion the first and the second dimension are at most as large as a largest dimension of the semiconductor chip. For example, the semiconductor chip may comprise the largest dimension in the second principal direction of extent.

According to at least one embodiment, the first contact layer extends from the radiation-passage-side main area onto a lateral face of the shaped body, the lateral face is arranged transversely in relation to the mounting face. Moreover, the second contact layer may extend from the radiation-passage-side main area onto a further lateral face of the shaped body, the further lateral face also is arranged transversely in relation to the mounting face. Furthermore, the first and the second contact layer may extend over the respective lateral faces as far as the rear main area of the shaped body. In particular, the lateral faces are completely covered by the respective contact layers.

In a preferred configuration of the optoelectronic semiconductor component, the shaped body comprises an opening that extends from the rear surface of the optoelectronic semiconductor chip as far as the rear main area of the shaped body. The opening enables an electrical contacting of the semiconductor chip on its rear surface.

For example, the opening may taper, proceeding from the rear main area of the shaped body as far as the rear surface of the optoelectronic semiconductor chip. This means that a cross-sectional area of the opening becomes smaller, proceeding from the rear main area of the shaped body as far as the rear surface of the optoelectronic semiconductor chip.

The opening is preferentially bounded on its underside by the rear surface of the semiconductor chip, and peripherally at least partly by at least one internal surface of the shaped body. For example, the opening may be bounded by a closed internal surface. In this case, the opening is completely enclosed peripherally by the shaped body. Moreover, it is conceivable that the opening extends from a first lateral face, for example, the mounting face, as far as a second lateral face situated opposite the first lateral face, the second lateral face being situated, for example, opposite the mounting face. The opening is then bounded not by a closed internal surface but, for example, by two unconnected internal surfaces.

In an advantageous configuration, the first contact layer extends from the rear main area of the shaped body right into the opening. In particular, the first contact layer extends from the radiation-passage-side main area, via a lateral face arranged transversely in relation to the mounting face and via the rear main area, right into the opening. The contact layer is preferably applied onto the internal surface of the shaped body and onto the rear surface of the optoelectronic semiconductor chip.

According to a preferred further development, a filling is arranged in the opening. For example, the filling may be formed from the same molding compound as the shaped body. By virtue of the filling, the semiconductor component gains further stability. The first contact layer is preferentially arranged between the filling and the shaped body. Moreover, the first contact layer is arranged between the semiconductor chip and the filling.

According to at least one embodiment of the optoelectronic semiconductor component, the shaped body is formed in a single layer. This means, in particular, that no interfaces appear within the shaped body.

Alternatively, the shaped body may be formed in two layers. This means, in particular, that within the shaped body an interface is formed which separates a first layer of the shaped body from a second layer. In particular, the first and the second layer are formed by the same molding compound. However, it is also conceivable to use different molding compounds for the two layers. In an advantageous configuration, the semiconductor component comprises a third contact layer which is arranged between the first and the second layer. The third contact layer forms an interface between the first and the second layer of the shaped body. The first contact layer and the rear surface of the semiconductor chip are preferentially connected to one another by means of the third contact layer. In particular, the first contact layer and the rear surface of the semiconductor chip are connected to one another mechanically and electrically by means of the third contact layer.

According to at least one embodiment, at least a part of the mounting face of the semiconductor component is formed by a lateral face of the shaped body. Moreover, a part of the mounting face of the semiconductor component may be formed by a lateral face of the optoelectronic semiconductor chip. If the lateral face of the optoelectronic semiconductor chip is covered with molding compound, the mounting face of the semiconductor component is preferentially formed only by the lateral face of the shaped body. Moreover, a part of the mounting face may be formed by at least one of the two contact layers which extend onto the mounting face. In particular, at least one of the two contact layers may extend onto that lateral face of the shaped body which forms at least a part of the mounting face.

According to at least one embodiment, for the optoelectronic semiconductor component an optoelectronic semiconductor chip is used that comprises a succession of semiconductor layers with an active zone and preferentially with further functional layers. The succession of semiconductor layers can be grown on a growth substrate by means of an epitaxial process, for example, by means of metalorganic vapor-phase epitaxy (MOVPE) or molecular-beam epitaxy (MBE). In the present case, it is preferentially a question of a thin-film semiconductor chip. This means, in particular, that after the growth of the succession of semiconductor layers the growth substrate is greatly thinned or is completely removed from the succession of semiconductor layers. The succession of semiconductor layers may be arranged on a substitute substrate.

According to at least one embodiment, the succession of semiconductor layers is not covered by the molding compound of the shaped body. A substrate surface of a substrate, on which the succession of semiconductor layers is arranged, is preferentially also not covered by the molding compound of the shaped body. Hence on the radiation passage side of the semiconductor component the shaped body preferentially does not project beyond the succession of semiconductor layers and, in particular, not beyond the substrate surface of the semiconductor chip. Further surfaces of the substrate may be positively embedded into the shaped body. In particular, lateral faces of the substrate are covered by the molding compound.

In an advantageous configuration, the optoelectronic semiconductor component does not have an additional housing. This means that the optoelectronic semiconductor chip, which is stabilized by the shaped body, can be arranged on a connection support without a further housing.

For example, a grouting, in particular a clear grouting, can be applied onto the succession of semiconductor layers.

The succession of semiconductor layers may, for example, are formed from a material based on In x Ga y Al 1-x-y N, where 0≦x≦1 and 0≦y≦1 holds in each instance. The succession of semiconductor layers is suitable, in particular, for emitting short-wave visible radiation, in particular from green to blue.

According to at least one embodiment, the optoelectronic semiconductor component is suitable for emitting mixed-color radiation. For this purpose the semiconductor component comprises, in particular, a conversion element which is arranged on the radiation passage face of the optoelectronic semiconductor chip. In the chip, a radiation exit face of the conversion element forms a part of the radiation-passage-side surface of the semiconductor component.

In an advantageous configuration, the first electrical contact and the second electrical contact are arranged on the substrate on which the succession of semiconductor layers is arranged. In particular, the first and the second contact layer terminate on a surface of the substrate. Advantageously, the radiation passage face is free of radiation-absorbing contact layers and contacts. For example, the first contact layer may terminate on a rear substrate surface. However, it is also possible that the first contact layer terminates on a front substrate surface. Moreover, the second contact layer may also terminate on a front substrate surface. In an advantageous configuration, the rear surface of the semiconductor chip is formed by the rear substrate surface. The succession of semiconductor layers is preferentially arranged on the front substrate surface.

A method for producing an optoelectronic semiconductor component has, according to at least one embodiment, the following steps:

making available a composite consisting of several optoelectronic semiconductor chips which are arranged with their radiation passage faces on a common support,

embedding the optoelectronic semiconductor chips into a molding compound, so that the lateral faces and rear surfaces of the semiconductor chips are covered by the molding compound, a projecting portion of the molding compound is assigned to each semiconductor chip, the portion is arranged on a lateral face of the semiconductor chip and comprising a first and a second dimension which are each larger than a smallest dimension of the semiconductor chip,

detaching the common support,

applying first and second metallizations onto the molding compound for forming first and second contact layers,

separation into several optoelectronic semiconductor components.

According to at least one embodiment of the method, the molding compound is applied onto the semiconductor chips by spraying or casting. Application of the molding compound is preferentially undertaken in a transfer-molding process, for example, a sheet transfer-molding process.

According to at least one embodiment of the method, the metallizations are generated galvanically. For example, for generating the metallizations firstly a seed layer, for example, consisting of titanium or copper, can be applied onto the molding compound, and a metal layer, for example, consisting of copper, can be electrodeposited on the seed layer. For producing the contact layers, the metallizations can be applied in already structured form or can be structured after formation of the metallizations.

According to at least one embodiment of the method, the molding compound is applied onto the semiconductor chips as a continuous closed layer and, except for the division into several molded bodies, is not structured any further.

Alternatively, the molding compound can be applied onto the semiconductor chips as a closed layer, and openings can be generated in the molding compound. In particular, in this case the openings extend as far as the rear surfaces of the optoelectronic semiconductor chips. The openings can be generated by removing the molding compound, for example, by means of laser ablation.

Furthermore, the molding compound can be applied as an interrupted layer. For example, the molding compound can be applied selectively, in which case selected regions of the semiconductor chips are recessed. In particular, the rear surfaces of the semiconductor chips are covered at most partly by the molding compound.

In a further configuration, for producing openings a structured sacrificial layer is used which covers regions of the semiconductor chips on which no molding compound is to be applied. After embedding of the semiconductor chips into the molding compound, the sacrificial layer is preferentially removed, in which case openings arise in regions of the detached sacrificial layer.

Further advantages, advantageous embodiments and further developments result from the exemplary embodiments described in the following in connection with the figures.

FIG. 1A shows a schematic side view, and FIG. 1B shows a schematic top view, of an arrangement including an optoelectronic semiconductor component described herein;

FIGS. 2B to 2D show schematic top views of the radiation-passage-side surface of an optoelectronic semiconductor component according to various exemplary embodiments, and FIG. 2A shows a schematic top view of a lateral face, situated opposite the mounting face, of an optoelectronic semiconductor component according to the various exemplary embodiments;

FIG. 3 shows a schematic top view of a lateral face, situated opposite the mounting face, according to a further exemplary embodiment;

FIG. 4A shows a schematic top view of a lateral face situated opposite the mounting face, and FIG. 4B shows a schematic top view of the radiation-passage-side surface of an optoelectronic semiconductor component according to a further exemplary embodiment;

FIG. 5A shows a schematic top view of a lateral face situated opposite the mounting face, and FIG. 5B shows a schematic top view of the radiation-passage-side surface of an optoelectronic semiconductor component according to a further exemplary embodiment;

FIGS. 6A to 6F and 7A to 7C and 8A to 8C show various method steps according to various exemplary embodiments of a method; and

FIG. 9B shows a schematic top view of a composite consisting of semiconductor chips, and FIG. 9A shows a schematic cross-sectional view of this composite.

FIGS. 1A and 1B illustrate a possible arrangement with an optoelectronic semiconductor component 100 described herein. The semiconductor component 100 is, in particular, a radiation-emitting semiconductor component. The optoelectronic semiconductor component 100 is arranged with its mounting face 4 on a connection support 20 . Located between the optoelectronic semiconductor component 100 and the connection support 20 is a connecting means 13 for fastening the semiconductor component 100 to the connection support 20 . As represented in FIG. 1B , the connecting means 13 may be arranged along edges of the mounting face 4 . In particular, the connecting means 13 is arranged on a radiation-passage-side surface 100 A, on two opposing lateral faces 100 B, and on a rear surface 100 C of the optoelectronic semiconductor component 100 . Furthermore, the semiconductor component 100 comprises a first and a second contact layer 3 A, 3 B which, corresponding to the connecting means 13 , proceeding from the radiation-passage-side surface 100 A via the lateral faces 100 B onto the rear surface 100 C of the optoelectronic semiconductor component 100 , extend along the stated surfaces. In particular, the contact layers 3 A, 3 B are connected to the connection support 20 mechanically and in electrically conducting manner by the connecting means 13 .

The optoelectronic semiconductor component 100 emits a large part of the generated radiation through the radiation-passage-side surface 100 A which is arranged transversely in relation to the mounting face 4 . A principal radiating direction 12 , in which the greater part of the generated radiation is emitted, runs perpendicular to a radiation passage face 1 A of the optoelectronic semiconductor chip 1 (see FIG. 2A ).

In this arrangement the radiation is laterally coupled into a light guide 30 .

The optoelectronic semiconductor component 100 may be designed to be comparatively flat and is therefore particularly suitable to form a flat backlighting array which can be used for a display, for example. In particular, the optoelectronic semiconductor component 100 has a height H between 0.2 mm and 0.4 mm. Furthermore, the optoelectronic semiconductor component 100 is designed to be comparatively narrow with a thickness D of about 0.2 mm.

Various exemplary embodiments of an optoelectronic semiconductor component 100 are represented in FIGS. 2B, 2C and 2D . The semiconductor component 100 comprises an optoelectronic semiconductor chip 1 and a shaped body 2 formed from a molding compound 200 , into which the optoelectronic semiconductor chip 1 is partly embedded. The shaped body 2 comprises a radiation-passage-side main area 2 A, several lateral faces 2 B and a rear main area 2 C.

Moreover, the optoelectronic semiconductor chip 1 comprises a radiation passage face 1 A, through which a large part of the generated radiation passes, and several lateral faces 1 B, which are arranged transversely in relation to the radiation passage face 1 A, and also a rear surface 1 C arranged opposite the radiation passage face 1 A. At least two lateral faces 1 B of the semiconductor chip 1 are covered by the molding compound 200 . For example, all four lateral faces 1 B may be covered by the molding compound 200 (see FIG. 2B ). Alternatively, at most three lateral faces 1 B may be covered by the molding compound 200 . For example, the lateral face 1 B arranged on the mounting face 4 may not are covered by molding compound, so that this lateral face 1 B forms a part of the mounting face 4 . Moreover, the lateral face 1 B situated opposite the mounting face 4 may also not are covered by molding compound (see FIG. 2C ). In particular, the semiconductor component 100 in this case has a height H that corresponds to the height H′ of the semiconductor chip 1 .

In the exemplary embodiments shown in FIGS. 2A to 2D , the rear surface 1 C is only partly covered by the molding compound. In particular, the shaped body 2 comprises an opening 5 that extends from the rear surface 1 C of the optoelectronic semiconductor chip 1 as far as the rear main area 2 C of the shaped body 2 . The opening 5 tapers, proceeding from the rear main area 2 C of the shaped body 2 as far as the rear surface 1 C of the optoelectronic semiconductor chip 1 .

The opening 5 is bounded on its underside by the rear surface 1 C of the semiconductor chip 1 , and peripherally by at least one internal surface 2 D of the shaped body 2 .

A possible configuration of the opening 5 is represented in FIG. 2D . The opening 5 in this case is bounded peripherally by a closed internal surface 2 D of the shaped body 2 . The opening 5 takes the form of an elongated hole and, in particular, has a greater extent parallel to the mounting face 4 than perpendicular to the mounting face 4 .

Alternatively, the opening 5 may be bounded by two unconnected internal surfaces of the shaped body 2 (not represented). In this case, the opening 5 may extend from the mounting face 4 as far as the lateral face 100 B of the semiconductor component 100 situated opposite the mounting face 4 .

The optoelectronic semiconductor component 100 includes a first contact layer 3 A and a second contact layer 3 B, which are arranged on the shaped body 2 and are provided for electrical connection of the semiconductor chip 1 . The two contact layers 3 A, 3 B extend from the front main area 2 A, respectively via a lateral face 2 B, onto the rear main area 2 C of the shaped body 2 . Furthermore, the first contact layer 3 A extends from the rear main area 2 C of the shaped body 2 right into the opening 5 . The first contact layer 3 a is applied onto an internal surface 2 D of the shaped body 2 and onto the rear surface 1 C of the optoelectronic semiconductor chip 1 . In particular, the first contact layer 3 A terminates on the rear surface 1 C and is connected to a first electrical contact (not represented) of the semiconductor chip 1 . The semiconductor chip 1 preferentially includes a substrate 6 and a succession of semiconductor layers 7 arranged on the substrate 6 . The first electrical contact is provided for electrical connection of a first semiconductor region (not represented) arranged on a side of the succession of semiconductor layers 7 facing toward the substrate 6 . Furthermore, the semiconductor chip 1 comprises a second electrical contact (not represented) which is provided for electrical connection of a second semiconductor region (not represented) arranged on a side of the succession of semiconductor layers 7 facing away from the substrate 6 . In particular, the first contact is a p-contact, and the first semiconductor region is a p-conducting semiconductor region. Moreover, the second contact is preferentially an n-contact, and the second semiconductor region is preferentially an n-conducting semiconductor region.

For example, the succession of semiconductor layers 7 may comprise an active zone which is provided with at least one electrically conducting aperture which enables an electrical contacting of the second semiconductor region, proceeding from the substrate 6 (not represented). In this case the second contact layer 3 B preferentially terminates on the substrate 6 . Similarly, the first semiconductor region can be electrically connected via the substrate 6 . By virtue of the substrate-side contacting of the semiconductor chip 1 , the radiation passage face 1 A can remain free of radiation-absorbing contact structures.

The shaped body 2 includes a first projecting portion 8 A and a second projecting portion 8 B, which are each arranged on a lateral face 1 B of the semiconductor chip 1 . The projecting portions 8 a , 8 b each comprise a first and second dimension which are each larger than a smallest dimension of the semiconductor chip 1 . The first dimension T is, in particular, the depth of the projecting portions 8 A, 8 B, and the second dimension B is the width of the projecting portions 8 A, 8 B. For example, the first dimension T of the projecting portions 8 A, 8 B may amount to between 0.2 mm and 2 mm. Furthermore, the second dimension B may amount to between 0.3 mm and 3 mm. Furthermore, a height H′ may amount to between 0.2 mm and 0.4 mm (see FIG. 2B ).

For example, the smallest dimension of the semiconductor chip may specify the thickness D thereof, which, in particular, amounts to between 0.1 mm and 0.2 mm.

The optoelectronic semiconductor component 100 preferentially includes, in an end region, connected to the semiconductor chip 1 , of the second contact layer 3 B, a passivation layer 9 which is arranged between the second contact layer 3 B and the optoelectronic semiconductor chip 1 . By means of the passivation layer 9 , the second contact layer 3 B can be electrically isolated in relation to the substrate 6 . For example, the passivation layer 9 may be formed from an organic material, in particular a synthetic substance. Advantageously, the second contact layer 3 B is designed to be narrower in the end region than in a transition region adjoining the lateral face 2 B, in which the radiation-passage-side main area 2 A is, in particular, completely covered by the second contact layer 3 B (see 2 B to 2 D). The first contact layer 3 A in the transition region between the lateral face 2 B and the radiation-passage-side main area 2 A preferentially also covers the latter completely (see 2 B to 2 D). However, the first contact layer 3 A does not reach as far as the semiconductor chip 1 but terminates on the radiation-passage-side main area 2 A.

Electrical contacting of the optoelectronic semiconductor component 100 is undertaken from outside by means of the first and second contact layers 3 A, 3 B, the connecting means 13 is arranged at least peripherally—that is to say, along edges that bound the mounting face 4 (see FIG. 1B in this regard). Moreover, at least one of the two contact layers 3 A, 3 B may extend onto the mounting face 4 , in which case the connecting means 13 is then also arranged, in particular, between the mounting face 4 and the connection support (not represented).

The semiconductor component 100 may, as represented in FIG. 2A , include a conversion element 10 which is arranged on the radiation passage face 1 A of the semiconductor chip 1 . The radiation passing through the radiation passage face 1 A of the semiconductor chip 1 can be wavelength-converted by means of the conversion element 10 . The semiconductor chip 1 preferentially emits radiation having a wavelength range in the ultraviolet to blue region of the spectrum. Moreover, the conversion element 10 is able to transform the radiation emitted by the semiconductor chip 1 into radiation having a wavelength range in the green to red region of the spectrum. For example, the optoelectronic semiconductor component 100 may be suitable to emit white light.

The optoelectronic semiconductor component 100 as represented in FIGS. 2A to 2D is designed to be particularly flat. In addition to this, the shaped body 2 or the projecting portions 8 a , 8 b provided with suitable dimensions impart(s) sufficient stability to the semiconductor component 100 , so that the semiconductor component 100 can be mounted transversely in relation to the radiation passage face 1 A, and hence takes the form of a side emitter.

In connection with FIG. 3 , a further exemplary embodiment of an optoelectronic semiconductor component 100 is represented. This component is similar to the semiconductor components 100 represented in FIGS. 2A to 2D . In contrast thereto, a filling 11 is arranged in the rear opening 5 . In this case, the opening 5 is completely filled out by the filling 11 . However, it is also conceivable that the filling 11 fills out only a part of the opening 5 . The filling 11 is formed, in particular, from the same material as the molding compound. The filling can be produced, for example, by means of spraying, casting or dispensing. By virtue of the filling 11 , the stability of the semiconductor component 100 can be further enhanced.

In the exemplary embodiment represented in connection with FIGS. 4A and 4B the shaped body 2 is formed in two layers. In this case, in a first production step the optoelectronic semiconductor chip 1 is preferentially embedded into a molding compound, in which case the lateral faces 1 B and the rear surface 1 C of the semiconductor chip 1 are completely covered by the molding compound. The molding compound can then be abraded parallel to the rear surface 1 C of the semiconductor chip 1 until the rear surface 1 C of the semiconductor chip 1 is not covered by molding compound. In particular, this is done by grinding the molding compound back. The remaining molding compound forms a first layer 21 of the finished shaped body 2 . A third contact layer 3 C can be applied onto the first layer 21 and onto the rear surface 1 C of the semiconductor chip 1 . Subsequently a second layer 22 , which can be produced from the same molding compound as the first layer 21 or from a different molding compound, is applied onto the first layer 21 and onto the semiconductor chip 1 embedded therein. Between the first and second layers 21 , 22 the two-layer shaped body 2 comprises an interface formed by the third contact layer 3 C. The third contact layer 3 C is connected to the first contact layer 3 A and establishes an electrical connection between the first contact layer 3 A and the semiconductor chip 1 .

In the exemplary embodiment of an optoelectronic semiconductor component 100 represented in connection with FIGS. 5A and 5B , the rear surface 1 C is completely covered by molding compound. The shaped body 2 comprises no interfaces in its interior. Furthermore, the contact layers 3 A, 3 B are each arranged only on the radiation-passage-side main area 2 A, on the lateral faces 2 B and on the rear main area 2 C of the shaped body 2 . Moreover, both contact layers 3 A, 3 B extend on the radiation-passage-side main area 2 A as far as the semiconductor chip 1 . In this exemplary embodiment the rear surface 1 C of the semiconductor chip 1 remains not covered by the contact layers 3 A, 3 B.

FIGS. 6A to 6F show various steps of a method according to a first exemplary embodiment for producing an optoelectronic semiconductor component as described herein.

FIG. 6A shows an initial step of the method, wherein a composite consisting of several optoelectronic semiconductor chips 1 is made available. The semiconductor chips 1 are arranged with their radiation passage faces 1 A on a common support 40 . The semiconductor chips 1 may be fastened to the support 40 , for example, by means of an adhesive film 14 .

FIG. 6B shows a next step, wherein the optoelectronic semiconductor chips 1 are embedded in molding compound 200 . In particular, in this case the lateral faces 1 B and rear surfaces 1 C of the semiconductor chips 1 are covered by the molding compound 200 , whereby projecting portions are formed which are arranged on lateral faces 1 B of the semiconductor chips 1 and which each comprise a first dimension T and a second dimension B which are each larger than a smallest dimension D of the semiconductor chips 1 (see FIG. 6A ).

FIG. 6C shows a further method step, wherein the common support 40 is detached.

In the method step represented in FIG. 6D , various openings 5 , 15 are formed in the molding compound 200 .

The openings 15 extend from a first main area of the molding compound 200 as far as a second main area and are each arranged between two adjacent semiconductor chips 1 . The openings 15 enable a division of the composite into several optoelectronic semiconductor components. The openings 5 each extend from the second main area of the molding compound as far as the rear surfaces 1 C of the optoelectronic semiconductor chips 1 . In particular, the openings 5 , 15 are generated in the molding compound 200 by means of laser ablation.

FIG. 6E shows a method step wherein a passivation layer 9 is applied onto each of the semiconductor chips 1 . In particular, the passivation layer 9 is applied on the edge of the semiconductor chip 1 , so that the second contact 16 is partly covered by the passivation layer 9 .

FIG. 6F shows a further method step wherein first and second metallizations are applied onto the molding compound 200 for forming the first and second contact layers 3 A, 3 B. In particular, the metallizations are generated galvanically, wherein firstly a seed layer can be applied, on which a metal layer is electrodeposited.

In a subsequent method step the composite can be separated along the openings 15 into several optoelectronic semiconductor components (not represented).

FIGS. 7A to 7C show first steps of a method according to a second exemplary embodiment, wherein the method step represented in FIG. 7A is preferentially undertaken in accordance with the method step represented in FIG. 6A . However, the openings 5 , 15 are formed not by removing the molding compound 200 , as represented in FIGS. 6C and 6D , but by means of recessing of the molding compound in the regions of the composite that are to remain free of molding compound 200 . In this case, the molding compound 200 is already applied as an interrupted layer. In the case of the method according to the second exemplary embodiment, the common support 40 is preferentially detached only when the molding compound provided with openings 5 , 15 is applied onto the semiconductor chips 1 (see FIGS. 7B and 7C ). The further method steps, such as applying passivation layers and applying metallizations, are preferentially undertaken in accordance with the method steps described in connection with FIGS. 6E and 6F .

A third exemplary embodiment of a method is represented in connection with FIGS. 8A to 8C . In this case, for generating the openings 5 , 15 use is made of a structured sacrificial layer 17 , for example, a photoresist layer, which is arranged in the regions of the composite where the openings 5 , 15 are to be formed. Molding compound 200 is arranged in interstices of the sacrificial layer 17 . Subsequently the sacrificial layer 17 is dissolved out, so that the openings in the molding compound 200 are formed (not represented). The common support 40 may already be removed prior to the removal of the sacrificial layer 17 (see FIG. 8C ). The further method steps, such as applying passivation layers and applying metallizations, are preferentially undertaken in accordance with the method steps described in connection with FIGS. 6E and 6F .

An exemplary embodiment of a composite consisting of semiconductor chips 1 is shown in FIG. 9B in top view and in FIG. 9A in a cross-sectional view along the dashed line represented in FIG. 9B .

In a first direction R 1 the semiconductor chips 1 are arranged in rows, each two adjacent semiconductor chips 1 is connected to one another by means of molding compound 200 . In a second direction R 2 arranged orthogonally to the first, the semiconductor chips 1 are also arranged in rows, each two adjacent semiconductor chips 1 of a row is separated from one another by an opening 15 . The opening 15 comprises first and second metallizations for forming first and second contact layers 3 A, 3 B. In particular, one opening 15 severs several rows of semiconductor chips 1 . The semiconductor chips 1 of the outer rows are connected to one another along the second direction R 2 in each instance by an edge consisting of molding compound 200 . A division of the composite is preferentially undertaken parallel to the first and second directions R 1 , R 2 , wherein the edges consisting of molding compound 200 and also the connections formed from molding compound 200 between the semiconductor chips 1 are severed, and consequently a plurality of optoelectronic semiconductor components 100 is formed.

The invention is not restricted by the description on the basis of the exemplary embodiments. Rather, the invention encompasses each new feature and also each combination of features, including, in particular, each combination of features in the claims, even if this feature or this combination itself is not specified explicitly in the claims or exemplary embodiments.