Buffer circuit having amplifier offset compensation and source driving circuit including the same

This application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2014-0013224 filed on Feb. 5, 2014, the disclosure of which is hereby incorporated by reference in its entirety.

1. Field

Some example embodiments of the inventive concepts relate to display devices, and more particularly, to source driving circuits of display devices.

2. Description of Related Art

Display devices (e.g., a liquid crystal display (LCD) device) include a source driving circuit and a gate driving circuit for driving a panel. The source driving circuit outputs data and includes an output buffer circuit having amplifiers.

The output deviation of the source driving circuit is desired to be relatively small in order to apply the circuit to high resolution display devices. The smaller the offset voltage of amplifiers included in the output buffer circuit, the smaller the output deviation of the source driving circuit.

At least one example embodiment of the inventive concepts provides an output buffer circuit of a source driving circuit, which is capable of reducing an amplifier offset.

At least one example embodiment of the inventive concepts provides a source driving circuit capable of reducing an amplifier offset.

Example embodiments of the inventive concepts are not limited to the above disclosure, and other example embodiments may become apparent to those of ordinary skill in the art based on the following descriptions.

In accordance with an example embodiment of the inventive concepts, an output buffer includes a plurality of channel amplifiers, each of which is configured to adjust an amount of current flowing through transistors connected to at least one of a non-inverted input terminal and an inverted input terminal of a differential input unit to compensate an amplifier offset, and adjust buffer input voltage signals to generate output voltage signals.

In some example embodiments, the output buffer circuit may measure an output voltage signal of each of the channel amplifiers in a state in which the non-inverted input terminal and the inverted input terminal are electrically connected to each other, and compensate the amplifier offset using offset information at a time point at which the output voltage signal transitions.

In some example embodiments, the output buffer circuit may adjust the amount of current flowing through the transistors connected to the inverted input terminal of the differential input unit of each of the channel amplifiers such that the amplifier offset is compensated.

In some example embodiments, the output buffer circuit may adjust the amount of current flowing through the transistors connected to the non-inverted input terminal of the differential input unit of each of the channel amplifiers such that the amplifier offset is compensated.

In some example embodiments each of the channel amplifiers may include a differential input unit, an upper bias circuit, a lower bias circuit, a load stage, and an output stage.

In some example embodiments, the differential input unit may include a P-type differential input unit and an N-type differential input unit, and may be configured to receive an input voltage signal and an output voltage signal in a differential mode, and compensates the amplifier offset in response to a switch control signal. The upper bias circuit may be electrically connected to the P-type differential input unit, and may configured to connect the P-type differential input unit to a supply voltage and supply a first bias current to the P-type differential input unit. The lower bias circuit may be electrically connected to the N-type differential input unit, and may configured to connect the N-type differential input unit to a ground voltage and supply a second bias current to the N-type differential input unit. The load stage may be electrically connected to the differential input unit, and may operate as a load of the differential input unit. The output stage may be electrically connected to the load stage, and may connect an output terminal of the load stage to the supply voltage or to the ground voltage.

In some example embodiments, the N-type differential input unit may include a first NMOS transistor, a second NMOS transistor, and an amplifier offset compensating circuit.

In some example embodiments, the first NMOS transistor may have a gate connected to the non-inverted input terminal of the differential input unit. The second NMOS transistor may have a gate connected to the inverted input terminal of the differential input unit. The amplifier offset compensating circuit may be connected in parallel to the second NMOS transistor, and may be configured to adjust the amount of current flowing through transistors connected to the inverted input terminal of the differential input unit in response to the switch control signal.

In some example embodiments, the amplifier offset compensating circuit may include a third NMOS transistor connected in parallel to the second NMOS transistor, a first switch connected between the gate of the second NMOS transistor and a gate of the third NMOS transistor, and a second switch connected between the gate of the third NMOS transistor and the ground voltage.

In some example embodiments, the N-type differential input unit may include at least one first NMOS transistor, at least one second NMOS transistor, and an amplifier offset compensating circuit.

In some example embodiments, the at least one first NMOS transistor may have a gate connected to the non-inverted input terminal of the differential input unit. The at least one second NMOS transistor may have a gate connected to the inverted input terminal of the differential input unit. The amplifier offset compensating circuit may be connected in parallel to the second NMOS transistor, and may be configured to adjust the amount of current flowing through transistors connected to the inverted input terminal of the differential input unit in response to the switch control signal.

In some example embodiments, the amplifier offset compensating circuit may include at least one third NMOS transistors connected in parallel to the at least one second NMOS transistor, a first switch connected between a gate of the at least one third NMOS transistor and the gate of the at least one second NMOS transistor, and a second switch connected between the gate of the at least one third NMOS transistor and the ground voltage.

In some example embodiments, the N-type differential input unit may include at least one first NMOS transistor, at least one second NMOS transistor, and an amplifier offset compensating circuit.

In some example embodiments, the first NMOS transistor may have a gate connected to the inverted input terminal of the differential input unit. The second NMOS transistor may have a gate connected to the non-inverted input terminal of the differential input unit. The amplifier offset compensating circuit may be connected in parallel to the second NMOS transistor, and may be configured to adjust the amount of current flowing through transistors connected to the non-inverted input terminal of the differential input unit in response to the switch control signal.

In some example embodiments, the amplifier offset compensating circuit may include at least one third NMOS transistor connected in parallel to the NMOS transistor, a first switch connected between a gate of the third NMOS transistor and the gate of second NMOS transistor, and a second switch connected between the gate of the third NMOS transistor and the ground voltage.

In some example embodiments, each of the channel amplifiers may further include a switch control signal generating circuit configured to generate the switch control signal based on offset information.

In accordance with an example embodiment of the inventive concepts, a gamma voltage generator includes a plurality of amplifiers and string resistors. The gamma voltage generator may be configured to detect offset of each of the amplifiers, determine polarities of the amplifiers, and provide the determined polarities to the amplifiers to perform a chopping operation.

In some example embodiments, the gamma voltage generator measures an output voltage signal of each of the amplifiers in a state in which the non-inverted input terminal and the inverted input terminal are electrically connected to each other, and compensate the offset of each of the amplifier using offset information at a time point at which the output voltage signal transitions.

In some example embodiments, the gamma voltage generator may include a gamma voltage generating unit, an offset detecting unit, and a polarity determining unit. The gamma voltage generating unit may include the plurality of amplifiers and the string resistors, and may be configured to generate gamma voltages and amplifier output voltages. The offset detecting unit may be configured to detect an amplifier offset based on the amplifier output voltages. The polarity determining unit may be configured to determine the polarities of the amplifiers based on the amplifier offset.

In accordance with an aspect example embodiment of the inventive concepts, an output buffer circuit includes a plurality of first amplifiers each including a differential input unit, the differential input unit configured to receive an input voltage signal and an output voltage signal of a corresponding one of the first amplifiers in a differential mode and compensate an offset of the corresponding one of the first amplifiers in response to switch control signals.

In some example embodiments, the differential input unit may include a P-type differential input unit, an N-type differential input unit having a first group of at least one NMOS transistor and a second group of at least one NMOS transistor, the first group connected to an inverted input terminal of the differential input unit, the second group connected to a non-inverted input terminal of the differential input unit, and an amplifier offset compensating circuit configured to selectively connect in parallel to the first group of at least one NMOS transistor and configured to control current flowing to the inverted input terminal in response to the switch control signals.

In some example embodiments, the switch signals may be signals generated based on offset information, the offset information being a signal corresponding to the output voltage signal measured in a state in which a non-inverted input terminal and an inverted input terminal of the differential input unit are electrically connected to each other.

In some example embodiments, the output buffer circuit may be configured to adjust an amount of current flowing through a current path connected to one of a non inverted input terminal and an inverted input terminal of the differential input, unit of at least one of the first amplifiers such that an offset of the cat least one one of the first amplifiers is compensated.

In some example embodiments, the output buffer circuit may be configured to compensate the offset of the corresponding one of the first amplifiers by measuring the output voltage signal of the corresponding one of the first amplifiers in a state in which a non inverted input terminal and an inverted input terminal of the differential input unit of the corresponding one of the first amplifiers are electrically connected to each other, and compensating the offset of the corresponding one of the first amplifiers using offset information at a time point at which the output voltage signal of the corresponding one of the first amplifiers transitions.

The foregoing and other features and advantages of the inventive concepts will be apparent from the more particular description of example embodiments of the inventive concepts, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the inventive concepts. In the drawings:

FIG. 1 is a block diagram illustrating a source driving circuit of a display device, in accordance with an example embodiment of the inventive concepts;

FIG. 2 is a circuit diagram illustrating an example of a digital-to-analog converter included in the source driving circuit of FIG. 1 ;

FIG. 3 is a circuit diagram illustrating an example of an output buffer circuit included in the source driving circuit of FIG. 1 ;

FIG. 4 is a circuit diagram illustrating an example configuration of a channel amplifier included in the output buffer circuit of FIG. 3 ;

FIG. 5 is a circuit diagram illustrating an example configuration of a switch control signal generating circuit included in the channel amplifier of FIG. 4 ;

FIG. 6 is a circuit diagram illustrating another example configuration of a channel amplifier included in the output buffer circuit of FIG. 3 ;

FIG. 7 is a circuit diagram illustrating an example configuration of a switch control signal generating circuit included in the channel amplifier of FIG. 6 ;

FIG. 8 is a circuit diagram illustrating still another example configuration of a channel amplifier included in the output buffer circuit of FIG. 3 ;

FIG. 9 is a circuit diagram illustrating yet another example configuration of a channel amplifier included in the output buffer circuit of FIG. 3 ;

FIG. 10 is diagrams illustrating a circuit configuration for measuring an amplifier offset in a test mode, and a circuit configuration of a channel amplifier in a normal node;

FIG. 11 is a diagram illustrating an example of a process of obtaining offset information of the channel amplifier, in accordance with some example embodiments of the inventive concepts;

FIG. 12 is a flowchart illustrating a method of operating a source driving circuit of a display device, in accordance with an example embodiment of the inventive concepts;

FIG. 13 is a flowchart illustrating a method of compensating an offset of the channel amplifier included in a source driving circuit of a display device;

FIG. 14 is a circuit diagram illustrating an example of a gamma voltage generator included in the source driving circuit of FIG. 1 ;

FIG. 15 is a circuit diagram illustrating an example configuration of a gamma voltage generating unit included in the gamma voltage generator of FIG. 14 ;

FIG. 16 is a circuit diagram illustrating an example configuration of an offset detecting unit included in the gamma voltage generator of FIG. 14 ;

FIG. 17 is a circuit diagram illustrating an example configuration of an amplifier included in the gamma voltage generating unit of FIG. 15 ;

FIG. 18 is a circuit diagram illustrating a configuration of the amplifier of FIG. 17 when a polarity has a logic high state;

FIG. 19 is a circuit diagram illustrating a configuration of the amplifier of FIG. 17 when a polarity has a logic low state;

FIG. 20 is a table illustrating a method of determining the polarity applied to amplifiers included in the gamma voltage generating unit of FIG. 15 ;

FIG. 21 is a graph illustrating offsets included in gamma voltages generated by the gamma voltage generator, which is configured to compensate an amplifier offset, shown in FIG. 14 ; and

FIG. 22 is a circuit diagram illustrating an LCD device that includes the source driving circuit according to an example embodiment of the inventive concepts.

Various example embodiments will now be described more fully with reference to the accompanying drawings in which some example embodiments are shown. These inventive concepts may, however, be embodied in different forms and should not be construed as limited to the example embodiments set forth herein. Rather, these example embodiments are provided so that this disclosure is thorough and complete and fully conveys the inventive concepts to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity.

It will be understood that when an element or layer is referred to as being “on,” “connected to” or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present. Like numerals refer to like elements throughout. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third, etc, may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present inventive concepts.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present inventive concepts. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise, it will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concepts belong. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Meanwhile, when it is possible to implement any embodiment in any other way, a function or an operation specified in a specific block may be performed differently from a flow specified in a flowchart. For example, two consecutive blocks may actually perform the function or the operation simultaneously, and the two blocks may perform the function or the operation conversely according to a related operation or function.

The inventive concepts will now be described more fully with reference to the accompanying drawings, in which some example embodiments of the inventive concepts are shown.

FIG. 1 is a block diagram illustrating a source driving circuit 100 of a display device, in accordance with an example embodiment of the inventive concepts.

Referring to FIG. 1 , the source driving circuit 100 includes a shift register 110 , a data lath circuit 120 , a digital-to-analog (D/A) converter 130 , an output buffer circuit 140 , and a gamma voltage generator 150 .

The gamma voltage generator 150 may include a plurality of amplifiers and string resistors and may generate a gamma voltage GMA. The gamma voltage generator 150 may detect offset of each of the amplifiers included in the gamma voltage generator 150 , determine polarities of the amplifiers, and provide the determined polarities to the amplifiers to perform a chopping operation. The gamma voltage generator 150 may compensate the amplifier offset using offset information at a time point at which output voltage signals of amplifiers included in the gamma voltage generator 150 transitions.

The shift register 110 may receive a clock signal CLK and an input/output signal DIO and generates a pulse signal by a desired (or alternatively, predetermined) number of clock signals CLK. The data latch circuit 120 may receive data DATA and a load signal TP. The data latch circuit 120 may latch data DATA according to a shift order of the shift register 110 and output the data DATA when the load signal TP is applied. The D/A converter 130 may generate input voltage signals VIN 1 to VINn that are analog signals corresponding to output signals D 1 to Dn of the data latch circuit 120 using the gamma voltage GMA.

The output buffer circuit 140 may include a plurality of channel amplifiers, and may compensate an amplifier offset by adjusting an amount of current flowing through a current path connected to one of a non-inverted input terminal and an inverted input terminal of the differential input unit of each of the channel amplifiers, and buffer the input voltage signals VIN 1 to VINn to generate source signals to Y 1 to Yn. The source signals Y 1 to Yn may be output to each source line according to an order of data DATA applied to the data latch circuit 120 .

The source driving circuit 100 of FIG. 1 may include an output buffer circuit according to some example embodiments of the inventive concepts described herein after.

FIG. 2 is a circuit diagram illustrating an example of the D/A converter 130 included in the source driving circuit of FIG. 1 .

Referring to FIG. 2 , the D/A converter 130 receives gamma voltages GMA from the gamma voltage generator 150 , and outputs gamma voltages GMA corresponding to digital input signals D 1 to Dn as input voltage signals VIN 1 to VINn.

FIG. 3 is a circuit diagram illustrating an example of the output buffer circuit 140 included in the source driving circuit 100 of FIG. 1 .

Referring to FIG. 3 , the output buffer circuit 140 performs buffering on the input voltage signals VIN 1 to VINn to generate output voltage signals Y 1 to Yn. The output buffer circuit 140 includes channel amplifiers OP_CH 1 to OP_CH 3 , which generate the output voltage signals Y 1 to Yn. A bias voltage VB is applied to the channel amplifiers OP_CH 1 to OP_CH 3 .

FIG. 4 is a circuit diagram illustrating an example configuration of the channel amplifier included in the output buffer circuit 140 of FIG. 3 .

Referring to FIG. 4 , a channel amplifier 140 _ 1 includes a differential input unit 142 , an upper bias unit including a PMOS transistor MPB a lower bias unit including an NMOS transistor MNB, a load stage 144 , and an output stage 145 . A bias voltage VB 1 may be applied to the PMOS transistor MPB, and a bias voltage VB 2 may be applied to the NMOS transistor MNB.

The differential input unit 142 includes a P-type differential input unit and an N-type differential input unit, and receives an input voltage signal VINP and an output voltage signal VOUT in a differential mode, and compensates an amplifier offset in response to switch control signals SWC 1 and SWC 1 B. In FIG. 4 , it is illustrated that the differential input unit 142 receives a first input voltage signal VINP and a second input voltage signal VINN. Because an inverted input terminal ITERM is connected to an output node, the second input voltage signal VINN is the same as an output voltage signal VOUT.

The T-type differential input unit includes PMOS transistors MP 1 and MP 2 , and the N-type differential input unit includes NMOS transistors MN 1 and MN 2 and an amplifier offset compensating circuit 143 . The NMOS transistor MN 1 has a gate connected to a non-inverted input terminal TERM of the differential input unit 142 . The NMOS transistor MN 2 has a gate connected to the inverted input terminal ITERM of the differential input unit 142 . The amplifier offset compensating circuit 143 is connected in parallel to the NMOS transistor MN 2 , and adjusts an amount of a current flowing through the NMOS transistors MN 2 and MN 3 connected to the inverted input terminal ITERM in response to the switch control signals SWC 1 and SWC 1 B. The switch control signals SWC 1 and SWC 1 B may have opposite phases. The amplifier offset compensating circuit 143 may include NMOS transistor MN 3 connected in parallel to the NMOS transistor MN 2 , a first switch SW 1 connected between a gate of the NMOS transistor MN 2 and a gate of the NMOS transistors MN 3 , and a second switch SW 2 connected between the gate of the NMOS transistor MN 3 and a ground voltage.

In the circuit of FIG. 4 , in the N-type differential input unit, a current flowing through the NMOS transistors MN 2 and MN 3 connected to the inverted input terminal ITERM of the differential input unit may flow through the load stage 144 and the lower bias circuit that includes NMOS transistor MNB.

The upper bias unit is electrically connected to the P-type differential input unit, and connects the P-type differential input unit to a supply voltage VDD and supplies a bias current to the P-type differential input unit. The lower bias circuit is electrically connected to the N-type differential input unit, and connects the N-type differential input unit to the ground voltage and supplies the bias current to the N-type differential input unit. The load stage 144 is electrically connected to the differential input unit 142 , and operates as a load of the differential input unit 142 . The output stage 145 is electrically connected to the load stage 144 , and connects an output terminal of the load stage 144 to the supply voltage VDD or the ground voltage. The load stage 144 may include an upper current source 146 connected to the N-type differential input unit and a lower current source 147 connected to the P-type differential input unit. The output stage 145 may include a PMOS transistor MPO 1 which connects an output node to the supply voltage and an NMOS transistor MNO 1 which connects the output node to the ground voltage.

The channel amplifier 140 _ 1 may further include a switch control signal generating circuit 148 that generates the switch control signals SWC 1 and SWC 1 B based on offset information INFO_OFF. The offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier 140 _ 1 measured in a state in which the non-inverted input terminal and the inverted input terminal of the differential input unit of the channel amplifier 140 _ 1 are electrically connected.

Hereinafter, the operation of the channel amplifier 140 _ 1 of FIG. 4 will be described.

The switch control signals SWC 1 and SWC 1 B may be generated by the switch control signal generating circuit 148 based on the offset information INFO_OFF. As described above, the offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier 140 _ 1 measured in a state in which the non-inverted input terminal TERM and the inverted input terminal ITERM of the differential input unit of the channel amplifier 140 _ 1 are electrically connected. The amplifier offset compensating circuit 143 connected to the inverted input terminal ITERM of the channel amplifier 140 _ 1 may adjust an amount of a current flowing through NMOS transistors in the differential input unit connected to the inverted input terminal ITERM by turning on or off the NMOS transistor MN 3 included in the amplifier offset compensating circuit 143 in response to the switch control signals SWC 1 and SWC 1 B. For example, when the first switch SW 1 is turned on and the second switch SW 2 is turned off, the NMOS transistor MN 3 is turned on and the amount of a current flowing through the transistors connected to the inverted input terminal ITERM may increase. When the first switch SW 1 is turned off and the second switch SW 2 is turned on, the NMOS transistor MN 3 is turned off and the amount of the current flowing through the transistors connected to the inverted input terminal ITERM may decrease.

For example, when the output voltage signal VOUT of the channel amplifier 140 _ 1 measured in a state in which the non-inverted input terminal TERM and the inverted input terminal ITERM of the differential input unit 142 are electrically connected to each other transitions from a low state to a high state, an amplifier offset may be presented. In this case, a current flowing through the transistors in the differential input unit connected to the non-inverted input terminal TERM may be larger than a current flowing through the transistors in the differential input unit connected to the inverted input terminal ITERM. At this time, when the first switch SW 1 is turned on and the second switch SW 2 is turned off, the NMOS transistor MN 3 is turned on and the amount of a current flowing through the transistors in the differential input unit connected to the inverted input terminal ITERM may increase, thereby decreasing the amplifier offset. Therefore, the channel amplifier 140 _ 1 may decrease the amplifier offset by including the amplifier offset compensating circuit 143 .

FIG. 5 is a circuit diagram illustrating an example configuration of the switch control signal generating circuit 148 included in the channel amplifier 140 _ 1 of FIG. 4 .

Referring to FIG. 5 , the switch control signal generating circuit 148 includes an inverter INV 1 , and outputs the offset information INFO_OFF as the first switch control signal SWC 1 , and inverts the offset information INFO_OFF to generate the second switch control signal SWC 1 B.

FIG. 6 is a circuit diagram illustrating another example configuration of the channel amplifier included in the output buffer circuit 140 of FIG. 3 .

Referring to FIG. 6 , the channel amplifier 140 _ 2 includes a differential input unit 142 b , an upper bias unit including a PMOS transistor MPB, a lower bias unit including an NMOS transistor MNB, a load stage 144 and an output stage 145 . A bias voltage VB 1 may be applied to the PMOS transistor MPB, and a bias voltage VB 2 may be applied to the NMOS transistor MNB.

The differential input unit 142 b may include a P-type differential input unit and an N-type differential input unit, and may receive an input voltage signal VNP and an output voltage signal VOUT in a differential mode, and may compensate an amplifier offset in response to switch control signals SWC 2 , SWC 2 B, SWC 3 , SWC 3 B, SWC 4 , and SWC 4 B. In FIG. 6 , it is illustrated that the differential input unit 142 b receives a first input voltage signal VINP and a second input voltage signal VINN. Because an inverted input terminal ITERM is connected to an output node, the second input voltage signal VINN is the same as an output voltage signal VOUT.

The P-type differential input unit may include PMOS transistors MP 11 and MP 12 , and the N-type differential input unit may include NMOS transistors MN 11 to MN 17 and an amplifier offset compensating circuit 143 b . The NMOS transistor MN 11 may have a gate connected to a non-inverted input terminal TERM of the differential input unit 142 b . The NMOS transistors MN 12 to MN 14 may be connected in parallel to the NMOS transistor MN 11 . The NMOS transistor MN 15 may have a gate connected to the inverted input terminal ITERM of the differential input unit. The NMOS transistors MN 16 to MN 17 may be connected in parallel to the NMOS transistor MN 15 . The amplifier offset compensating circuit 143 b may be connected in parallel to the NMOS transistor MN 15 , and adjust an amount of a current flowing through the transistors connected to the inverted input terminal ITERM in response to the switch control signals SWC 2 , SWC 2 B, SWC 3 , SWC 3 B, SWC 4 , and SWC 4 B.

The amplifier offset compensating circuit 143 b may include NMOS transistors MN 18 , MN 19 and MN 20 connected in parallel to the NMOS transistor MN 15 , a first switch SW 1 connected between a gate of the NMOS transistor MN 15 and a gate of the NMOS transistors MN 18 , a second switch SW 2 connected between the gate of the NMOS transistor MN 18 and a ground voltage, a third switch SW 3 connected between the gate of the NMOS transistor MN 15 and a gate of the NMOS transistors MN 19 , a fourth switch SW 4 connected between the gate of the NMOS transistor MN 19 and the ground voltage, a fifth switch SW 5 connected between the gate of the NMOS transistor MN 15 and a gate of the NMOS transistors MN 20 , and a sixth switch SW 6 connected between the gate of the NMOS transistor MN 20 and the ground voltage.

In the circuit of FIG. 6 , in the N-type differential input unit, a current flowing through the NMOS transistors MN 15 to MN 20 connected to the inverted input terminal ITERM of the differential input unit may flow through the load stage 144 and the lower bias circuit that includes NMOS transistor MNB.

The channel amplifier 140 _ 2 may further include a switch control signal generating circuit 148 b that generates the switch control signals SWC 2 , SWC 2 B, SWC 3 , SWC 3 B, SWC 4 and SWC 4 B based on offset information INFO_OFF. The offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier 140 _ 2 measured in a state in which the non-inverted input, terminal and the inverted input terminal of the differential input unit of the channel amplifier 140 _ 2 are electrically connected.

Hereinafter, the operation of the channel amplifier 140 _ 2 of FIG. 6 will be described.

The switch control signals SWC 2 , SWC 2 B, SWC 3 , SWC 3 B, SWC 4 and SWC 4 B may be generated by the switch control signal generating circuit 148 b based on the offset information INFO_OFF. As described above, the offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier 140 _ 2 measured in a state in which the non-inverted input terminal TERM and the inverted input terminal ITERM of the differential input unit of the channel amplifier 140 _ 2 are electrically connected. The amplifier offset compensating circuit 143 b connected to the inverted input terminal ITERM of the channel amplifier 140 _ 2 may adjust an amount of a current flowing through transistors in the differential input unit connected to the inverted input terminal ITERM by turning on or of the NMOS transistors MN 18 , MN 19 and LM 20 included in the amplifier offset compensating circuit 143 b in response to the switch control signals SW 2 and SWC 2 B to SWC 4 and SWC 4 B. For example, when the first switch SW 1 is turned on and the second switch SW 2 is turned off, the NMOS transistor MN 18 is turned on and an amount of a current flowing through the transistors of the differential input unit connected to the inverted input terminal ITERM may increase. When the first switch SW 1 is turned off and the second switch SW 2 is turned on, the NMOS transistor MN 18 is turned off and the amount of a current flowing through the transistors of the differential input unit connected to the inverted input terminal ITERM may decrease. Further, when the third switch SW 3 is turned on and the fourth switch SW 4 is turned off, the NMOS transistor MN 19 is turned on and the amount of a current flowing through the transistors of the differential input unit connected to the inverted input terminal ITERM may increase. When the third switch SW 3 is turned off and the fourth switch SW 4 is turned on, the NMOS transistor MN 19 is turned off and the amount of a current flowing through the transistors of the differential input unit connected to the inverted input terminal ITERM may decrease. Further, when the fifth switch SW 5 is turned on and the sixth switch SW 6 is turned off, the NMOS transistor MN 20 is turned on and the amount of a current flowing through the transistors of the differential input unit connected to the inverted input terminal ITERM may increase. When the fifth switch SW 5 is turned off and the sixth switch SW 6 is turned on, the NMOS transistor MN 20 is turned of and the amount of a current flowing through the transistors of the differential input unit connected to the inverted input terminal ITERM may decrease.

For example, when the output voltage signal VOUT of the channel amplifier 140 _ 2 measured in a state in which the non-inverted input terminal ITERM and the inverted input terminal TERM of the differential input unit 142 b are electrically connected to each other transitions from a low state to a high state, an amplifier offset may occur. In this case, a current flowing through the transistors in the differential input unit connected to the non-inverted input terminal TERM may be larger than a current flowing through the transistors in the differential input unit connected to the inverted input terminal ITERM. At this time, when the first switch SW 1 is turned on and the second switch SW 2 is turned off, the NMOS transistor MN 18 is turned on and the amount of a current flowing through the transistors in the differential input unit connected to the inverted input terminal ITERM may increase, thereby decreasing the amplifier offset. Again, when the output voltage signal VOUT of the channel amplifier 140 _ 2 measured in a state in which the non-inverted input terminal and the inverted input terminal of the differential input unit 142 b are electrically connected to each other still transitions from a low state to a high state, an amplifier offset may still occur. In this case, when the third switch SW 3 is turned on and the fourth switch SW 4 is turned off while the NMOS transistor MN 18 is turned on, the NMOS transistor MN 19 is turned on, and the amount of a current flowing through the transistors in the differential input unit connected to the inverted input terminal ITERM may further increase, thereby further decreasing the amplifier offset. When the output voltage signal VOUT of the channel amplifier 140 _ 2 measured in a state in which the non-inverted input terminal and the inverted input terminal of the differential input unit 142 b are electrically connected to each other still transitions from a low state to a high state, an amplifier offset may still occur. In this case, when the NMOS transistor MN 19 (and/or the NMOS transistor MN 18 ) is turned on and the fifth switch SW 5 is turned on and the sixth switch SW 6 is turned off, the NMOS transistor MN 20 is turned on, and the amount of a current flowing through the transistors in the differential input unit connected to the inverted input terminal ITERM may further increase, thereby further decreasing the amplifier offset.

Again, when the output voltage signal VOUT of the channel amplifier 140 _ 2 measured in a state in which the non-inverted input terminal and the inverted input terminal of the differential input unit 142 b are electrically connected to each other does not transition, the amplifier offset may be sufficiently decreased. Accordingly, the channel amplifier 140 _ 2 may decrease the amplifier offset by including the amplifier offset compensating circuit 143 b.

FIG. 7 is a circuit diagram illustrating an example configuration of the switch control signal generating circuit 148 b included in the channel amplifier 140 _ 2 of FIG. 6 .

Referring to FIG. 7 , the switch control signal generating circuit 148 b includes a decoder 12 and inverters INV 2 , INV 3 , and INV 4 . The decoder 12 may receive and decode the offset information INFO_OFF to generate the switch control signals SWC 2 , SWC 3 and SWC 4 . The inverter INV 2 may invert the switch control signal SWC 2 to generate the switch control signal SWC 2 B, the inverter INV 3 may invert the switch control signal SWC 3 to generate the switch control signal SWC 3 B, and the inverter INV 4 may invert the switch control signal SWC 4 to generate the switch control signal SWC 4 B.

FIG. 8 is a circuit diagram illustrating still another example configuration of the channel amplifier included in the output buffer circuit 140 of FIG. 3 .

Referring to FIG. 8 , the channel amplifier 140 _ 3 includes a differential input unit 142 c , an upper bias unit including a PMOS transistor MPB, a lower bias unit including an NMOS transistor MNB, a load stage 144 and an output stage 145 . A bias voltage VB 1 may be applied to the PMOS transistor MPB, and a bias voltage VB 2 may be applied to the NMOS transistor MNB.

The differential input unit 142 c may include a P-type differential input unit and an N-type differential input unit, and may receive an input voltage signal VINP and an output voltage signal VOUT in a differential mode, and compensates an amplifier offset in response to switch control signals SWC 11 and SWC 11 B. In FIG. 8 , it is illustrated that the differential input unit 142 c receives a first input voltage signal VINP and a second input voltage signal VINN. Because an inverted input terminal ITERM is connected to an output node, the second input voltage signal VINN is the same as an output voltage signal VOUT.

The P-type differential input unit may include PMOS transistors MP 1 and MP 2 , and the N-type differential input unit may include NMOS transistors MN 1 and MN 2 and an amplifier offset compensating circuit 143 c . The NMOS transistor MN 1 may have a gate connected to a non-inverted input terminal TERM of the differential input unit 142 c . The NMOS transistor MN 2 may have a gate connected to the inverted input terminal ITERM of the differential input unit 142 c . The amplifier offset compensating circuit 143 c may be connected in parallel to the NMOS transistor MN 1 , and a may adjust an amount of a current flowing through the transistors in the differential input unit connected to the non-inverted input terminal TERM in response to the switch control signals SWC 11 and SWC 11 B. The amplifier offset compensating circuit 143 c may include NMOS transistor MN 23 connected in parallel to the NMOS transistor MN 1 , a first switch SW 11 connected between a gate of the NMOS transistor MN 1 and a gate of the NMOS transistors MN 23 , and a second switch SW 11 B connected between the gate of the NMOS transistor MN 23 and a ground voltage.

In the circuit of FIG. 8 , in the N-type differential input unit, a current flowing through the NMOS transistor MN 2 connected to the inverted input terminal ITERM of the differential input unit may flow through the load stage 144 and the lower bias unit that includes NMOS transistor MNB.

In the circuit of FIG. 8 , in the N-type differential input unit, a current flowing through the NMOS transistors MN 1 and MN 23 connected to the non-inverted input terminal TERM of the differential input unit may flow through the load stage 144 and the lower bias unit that includes NMOS transistor MNB.

The channel amplifier 140 _ 3 may further include a switch control signal generating circuit 148 c that generates the switch control signals SWC 11 and SWC 11 B based on offset information INFO_OFF. The switch control signal generating circuit 148 c may have a similar configuration as the switch control signal generating circuit 148 of FIG. 5 .

The offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier 140 _ 3 measured in a state in which the non-inverted input terminal TERM and the inverted input terminal ITERM of the differential input unit of the channel amplifier 140 _ 3 are electrically connected to each other.

Hereinafter, the operation of the channel amplifier 140 _ 3 of FIG. 8 will described.

The switch control signals SWC 11 and SWC 11 B may be generated by the switch control signal generating circuit 148 c based on the offset information INFO_OFF. As described above, the offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier 140 _ 3 measured in a state in which the non-inverted input terminal TERM and the inverted input terminal ITERM of the differential input unit of the channel amplifier 140 _ 3 are electrically connected to each other. The amplifier offset compensating circuit 143 c connected to the non-inverted input terminal TERM of the channel amplifier 140 _ 3 may adjust an amount of a current flowing through the transistors in the differential input unit connected to the non-inverted input terminal TERM by turning on or off the NMOS transistor MN 23 included in the amplifier offset compensating circuit 143 c in response to the switch control signals SWC 11 and SWC 11 B. For example, when the first switch SW 11 is turned on and the second switch SW 11 B is turned off, the NMOS transistor MN 2 is turned on and the amount of a current flowing through the transistors connected to the non-inverted input terminal TERM may increase. When the first switch SW 11 is turned off and the second switch SW 11 B is turned on, the NMOS transistor MN 23 is turned off and the amount of a current flowing through the transistors connected to the non-inverted input terminal TERM may decrease. As such, the channel amplifier 140 _ 3 may decrease the amplifier offset by the amplifier offset compensating circuit 143 c.

FIG. 9 is a circuit diagram illustrating yet another example configuration of the channel amplifier included in the output buffer circuit of FIG. 3 .

Referring to FIG. 9 , the channel amplifier 140 _ 4 may include a differential input unit 142 e , an upper bias unit including a PMOS transistor MPB, a lower bias unit including an NMOS transistor MNB, a load stage 144 and an output stage 145 . A bias voltage VB 1 may be applied to the PMOS transistor MPB, and a bias voltage VB 2 may be applied to the NMOS transistor MNB.

The differential input unit 142 e may include a P-type differential input unit and an N-type differential input unit, and may receive an input voltage signal VINP and an output voltage signal VOUT in a differential mode, and may compensate an amplifier offset in response to switch control signals SWC 12 , SWC 12 B, SWC 13 , SWC 13 B, SWC 14 and SWC 14 B. In FIG. 9 , it is illustrated that the differential input unit 142 e receives a first input voltage signal VINP and a second input voltage signal VINN. Because an inverted input terminal ITERM is connected to an output node, the second input voltage signal VINN is the same as an output voltage signal VOUT.

The P-type differential input unit may include PMOS transistors MP 11 and MP 12 , and the N-type differential input unit may include NMOS transistors MN 31 , MN 32 , MN 33 , MN 34 , MN 37 , MN 38 , MN 39 and MN 40 and an amplifier offset compensating circuit 143 e . The NMOS transistor MN 37 may have a gate connected to the inverted input terminal ITERM of the differential input unit 142 e . The NMOS transistors MN 38 , MN 39 and MN 40 are connected in parallel to the NMOS transistor MN 37 . The NMOS transistor MN 31 has a gate connected to a non-inverted input terminal TERM of the differential input unit 142 e . The NMOS transistors MN 32 and MN 33 are connected in parallel to the NMOS transistor MN 31 . The amplifier offset compensating circuit 143 e may be connected in parallel to the NMOS transistor MN 31 , and may adjust an amount of a current flowing through the transistors in the differential input unit connected to the non-inverted input terminal TERM in response to the switch control signals SWC 12 , SWC 12 B, SWC 13 , SWC 13 B, SWC 14 and SWC 14 B.

The amplifier offset compensating circuit 143 e may include NMOS transistors MN 34 , MN 35 and MN 36 connected in parallel to the NMOS transistor MN 31 , a first switch SW 14 connected between a gate of the NMOS transistor M 31 and a gate of the NMOS transistors MN 34 , a second switch SW 14 B connected between the gate of the NMOS transistor MN 34 and a ground voltage, a third switch SW 15 connected between a gate of the NMOS transistor M 31 and a gate of the NMOS transistors MN 35 , a fourth switch SW 15 B connected between the gate of the NMOS transistor MN 35 and the ground voltage, a fifth switch SW 16 connected between a gate of the NMOS transistor M 31 and a gate of the NMOS transistors MN 36 , a sixth switch SW 16 B connected between the gate of the NMOS transistor MN 36 and the ground voltage.

In the circuit of FIG. 9 , in the N-type differential input unit, a current flowing through the NMOS transistors MN 31 , MN 32 , MN 33 , MN 34 , MN 35 and MN 36 connected to the non-inverted input terminal TERM of the differential input unit may flow through the load stage 144 and the lower bias unit that includes NMOS transistor MNB.

The channel amplifier 140 _ 4 may further include a switch control signal generating circuit 148 e that generates the switch control signals SWC 12 , SWC 12 B, SWC 13 , SWC 13 B, SWC 14 and SWC 14 B based on offset information INFO_OFF. The switch control signal generating circuit 148 e may have a similar configuration as the switch control signal generating circuit 148 b of FIG. 7 .

The offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier 140 _ 4 measured in a state in which the non-inverted input terminal and the inverted input terminal of the differential input unit of the channel amplifier 140 _ 4 are electrically connected to each other.

Hereinafter, the operation of the channel amplifier 140 _ 4 of FIG. 9 will be described.

The switch control signals SWC 12 , SWC 12 B, SWC 13 , SWC 13 B, SWC 14 and SWC 14 B may be generated by the switch control signal generating circuit 148 e based on the offset information INFO_OFF. As described above, the offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier 140 _ 4 measured in a state in which the non-inverted input terminal TERM and the inverted input terminal ITERM of the differential input unit of the channel amplifier 140 _ 4 are electrically connected to each other. The amplifier offset compensating circuit 143 e connected to the non-inverted input terminal TERM of the channel amplifier 140 _ 4 may adjust an amount of a current flowing through the transistors in the differential input unit connected to the non-inverted input terminal TERM by turning on or off the NMOS transistors MN 34 , MN 35 and MN 36 included in the amplifier offset compensating circuit 143 e in response to the switch control signals SWC 12 , SWC 12 B, SWC 13 , SWC 13 B, SWC 14 and SWC 14 B.

Therefore, the channel amplifier 140 _ 4 may decrease the amplifier offset by the amplifier offset compensating circuit 143 e.

FIG. 10 is diagrams illustrating circuit configurations for measuring an amplifier offset in a test mode, and a circuit configuration of a channel amplifier in a normal node.

FIG. 10( a ) illustrates a circuit configuration for measuring an amplifier offset in a test mode, and FIG. 10( b ) illustrates a circuit configuration in a normal mode. As shown in FIG. 10 , the amplifier offset can be Obtained using a time point at which the output voltage signal VOUT transitions after measuring the output voltage signal VOUT when the non-inverted input terminal and the inverted input terminal of the differential input unit of the channel amplifier are electrically connected to each other. The offset information INFO_OFF may be a signal corresponding to the output voltage signal VOUT of the channel amplifier measured when the ion-inverted input terminal and the inverted input terminal of the differential input unit of the channel amplifier are electrically connected to each other.

FIG. 11 is a diagram illustrating an example of a process of obtaining offset information of a channel amplifier in accordance with some example embodiments of the inventive concepts.

Referring to FIG. 11 , at T 1 when an internal offset of an amplifier, which is a difference between a voltage signal of a positive input terminal and a voltage signal of a negative input terminal, is large, the output voltage of the amplifier transitions from a logic low state to a logic high state. The internal offset value of the amplifier may be adjusted by selectively turning on NMOS transistors using the amplifier offset compensating circuit according to some example embodiments of the inventive concepts. At T 2 , the output voltage of the amplifier does not transition because the internal offset of the amplifier is too relatively small (e.g., less than a threshold amount). At T 3 , the value of a voltage signal at a positive input terminal and the value of a voltage signal at a negative input terminal are reversed, but the output voltage of the amplifier does not transition because the internal offset of the amplifier is relatively small (e.g., less than a threshold amount). At T 4 , a difference between the value of a voltage signal at a positive input terminal and the value of a voltage signal at a negative input terminal are reversed and the internal offset of the amplifier is relatively large (e.g., larger than a threshold amount), and the output voltage of the amplifier transitions from a logic high state to a low high state.

As described above, the internal offset value of the amplifier may be maintain to be substantially small by selectively turning on NMOS transistors using the amplifier offset compensating circuit according to some example embodiments of the inventive concepts.

FIG. 12 is a flowchart illustrating a method of operating a source driving circuit of a display device in accordance with an example embodiment of the inventive concepts.

Referring to FIG. 12 , the method of operating the source driving circuit of the display device may include:

(1) generating a pulse signal based on a clock signal and an input/output control signal (S 1 );

(2) latching data based on the pulse signal (S 2 );

(3) outputting the data as digital input signals in response to a load signal (S 3 );

(4) generating input voltage signals corresponding to the digital input signals using a gray voltage (S 4 );

(5) adjusting the amount of current flowing through the transistors connected to the non-inverted input terminal of the differential input unit of each channel amplifier to compensate the amplifier offset (S 5 ); and

(6) buffering the input voltage signals to generate source signals (S 6 ).

FIG. 13 is a flowchart illustrating a method of compensating an offset of a channel amplifier included in the source driving circuit of the display device.

Referring to FIG. 13 , a method of compensating an offset of a channel amplifier included in the source driving circuit of the display device may include:

(1) electrically connecting the non-inverted input terminal and the inverted input terminal of each of the differential input units of the channel amplifiers (S 51 );

(2) measuring an output voltage signal of each of the channel amplifiers (S 52 );

(3) storing offset information at a time point at which the output voltage signal transitions (S 53 ); and

(4) compensating an amplifier offset using the offset information (S 54 ).

FIG. 14 is a circuit diagram illustrating an example of the gamma voltage generator 150 included in the source driving circuit of FIG. 1 .

The gamma voltage generator 150 may include a plurality of amplifiers and string resistors. The gamma voltage generator 150 may detect offset of each of the amplifiers, determine polarities of the amplifiers, and provide the determined polarities to the amplifiers to perform a chopping operation. The gamma voltage generator 150 may measure an output voltage signal of each amplifier in a state in which the non-inverted input terminal and the inverted input terminal are electrically connected to each other, and compensate the amplifier offset using offset information at a time point at which the output voltage signal transitions.

Referring to FIG. 14 , the gamma voltage generator 150 may include a gamma voltage generating unit 152 , an offset detecting unit 154 and a polarity determining unit 156 .

The gamma voltage generating unit 152 may include a plurality of amplifiers and the string resistors, and generates gamma voltages GMA and amplifier output voltages VAO. The offset detecting unit 154 detects an amplifier offset COMPO based on the amplifier output voltages VAO. The polarity determining unit 156 may determine the polarities POL of the amplifiers based on an offset value COMPO of the amplifiers.

FIG. 15 is a circuit diagram illustrating an example configuration of a gamma voltage generating unit 152 included in the gamma voltage generator 150 of FIG. 14 .

Referring to FIG. 15 , the gamma voltage generating unit 152 may include a plurality of amplifiers B 1 to B 11 , string resistors 10 , 13 to 20 and 29 , and selecting circuits 11 , 12 and 21 to 28 .

Each of the string resistors 10 , 13 to 20 and 29 may include a plurality of resistors connected to each other in series. The string resistor 10 may be connected between a first voltage VREG and a second voltage VGS, and include a plurality of resistors. Each of the amplifiers B 1 to B 11 may include a switch connected between an inverted input terminal and an output terminal, and a switch connected between a non-inverted input terminal and the inverted input terminal. For example, the first amplifier B 1 operates in response to a first polarity POL0, and may include a switch that operates in response to an enable signal AEN 0 and a switch that operates in response to an enable signal AENB 0 . The enable signal AEN 0 and the enable signal AENB 0 are signals having opposite phases. The eleventh amplifier B 11 operates in response to an eleventh polarity POL10, and may include a switch which operates in response to an enable AEN 10 and a switch which operates in response to an enable signal AENB 10 . In a normal operation mode, AEN 0 may be enabled and AENB 0 may be disabled. Therefore, in the normal operation mode, the first amplifier B 1 may operate as a buffer. In an offset measuring mode, the first amplifier B 1 may operate as a comparator. The remaining amplifiers B 2 to B 11 may operate in the same way. Each of the amplifiers B 1 to B 11 included in the gamma voltage generating unit 152 may operate in a chopping mode in response to the values of polarities (POL).

FIG. 16 is a circuit diagram illustrating an example configuration of the offset detecting unit 154 included in the gamma voltage generator of FIG. 14 .

Referring to FIG. 16 , the offset detecting unit 154 may include a selecting circuit 22 and a comparator 24 . The selecting circuit 22 may select one of amplifier output voltages VAO<10:0> in response to a selection signal SEL. The comparator 24 may compare an output signal of the selecting circuit 22 with a reference voltage REF and generate a comparison output voltage COMPO. The comparison output voltage COMPO may be a signal corresponding to an amplifier offset signal. For example, the output voltage of the first amplifier B 1 in FIG. 15 may be measured in a state, in which AEN 0 is disabled and AENB 0 is enabled, to detect an offset of the first amplifier B 1 in FIG. 15 . In the same way, the output voltage of the eleventh amplifier B 11 in FIG. 15 may be measured in a state, in which AEN 10 is disabled and AENB 10 is enabled to detect an offset of the eleventh amplifier B 11 . When output voltages of all the amplifiers B 1 to B 11 are obtained, one of the amplifier output voltages VAO<10:0> is selected, and then an amplifier output voltage VAO of the selected amplifier may be compared with the reference voltage REF to generate the comparison output voltage COMPO.

FIG. 17 is a circuit diagram illustrating an example configuration of the amplifier included in the gamma voltage generating unit of FIG. 15 .

Referring to FIG. 17 , the amplifier may include PMOS transistors MP 51 , MP 52 , and MP 53 . NMOS transistors MN 51 and MN 52 , switches SW 51 to SW 58 , and current sources IS 1 and IS 2 . An input signal IN may be input to a node N 51 , and an output signal OUT may be output from a node N 54 . The switches SW 52 , SW 53 , SW 55 , and SW 58 may operate in response to the polarity signal POL, and the switches SW 51 , SW 54 , SW 56 , and SW 57 may operate in response to an inverted polarity signal POLB. The switch SW 51 may be connected between the node N 51 and a gate of the NMOS transistor MN 51 , the switch SW 52 may be connected between the node N 51 and a gate of the NMOS transistor MN 52 , the switch SW 53 may be connected between the node N 52 and a drain of the NMOS transistor MN 51 , and the switch SW 54 may be connected between the node N 52 and a drain of the NMOS transistor MN 52 . The switch SW 55 may be connected between the drain of the NMOS transistor MN 52 and a gate of a PMOS transistor MP 53 . The switch SW 56 may be connected between the drain of the NMOS transistor MN 51 and the gate of the PMOS transistor MP 53 . The switch SW 57 may be connected between the gate of the NMOS transistor MN 52 and the node N 54 , and the switch SW 58 may be connected between the gate of the NMOS transistor MN 51 and the node N 54 . The drain of the PMOS transistor MP 51 may be connected to the drain of the NMOS transistor MN 51 , and the drain of the PMOS transistor MP 52 may be connected to the drain of the NMOS transistor MN 52 . The sources of the PMOS transistors MP 51 , MP 52 , and MP 53 may be connected to the supply voltage VDD. The current source IS 1 may be connected between a node N 53 and a ground voltage VSS, and the current source IS 2 may be connected between the node N 54 and the ground voltage VSS.

FIG. 18 is a circuit diagram illustrating a configuration of the amplifier of FIG. 17 when a polarity has a logic “high” state, and FIG. 19 is a circuit diagram illustrating a configuration of the amplifier of FIG. 17 when the polarity has a logic “low” state.

Referring to FIG. 18 , when the polarity has a logic “high” state, the switches SW 52 , SW 53 , SW 55 , and SW 58 is in an on state, and the switches SW 51 , SW 54 , SW 56 , and SW 57 is in an off state. When the input signal IN is V, and a small signal voltage dV is applied to the gate of the NMOS transistor MN 51 , the output signal OUT may have a value of V−dV.

Referring to FIG. 19 , when the polarity has a logic “low” state, the switches SW 52 , SW 53 , SW 55 , and SW 58 is in an off state, and the switches SW 51 , SW 54 , SW 56 , and SW 57 is in an on state. When the input signal IN is V, and a small signal voltage dV is applied to the gate of the NMOS transistor MN 51 , the output signal OUT may have a value of V+dV.

FIG. 20 is a table illustrating a method of determining the polarity applied to the amplifiers included in the gamma voltage generating unit of FIG. 15 . The values of the polarities POL VALUE may be generated by the polarity determining unit 156 in FIG. 14 , and determined by comparing an expected value EXP and a measured value MEAS. Further, the values of the polarities POL VALUE may be determined by, for example, an application processor (AP) or a logic circuit included in the system.

Referring to FIG. 20 , when the measured value MEAS has the same logic value as the expected value EXP, the values of the polarities POL VALUE may be determined as a logic “low,” and when the measured value MEAS has a different logic value from the expected value EXP, the values of the polarities POL VALUE may be determined as a logic “high.” For example, the expected value EXP may be a previous logic value of the polarity applied to each of the amplifiers. For example, an offset for each of the amplifiers in FIG. 15 are measured and then the measured value MEAS corresponding to the measured offset is obtained. The measured value MEAS of the polarity may be compared with a previous POL value of the amplifier to determine a logic value of a new polarity.

FIG. 21 is a graph illustrating offsets included in gamma voltages generated by the gamma voltage generator, which is configured to compensate the amplifier offset, shown in FIG. 14 . In FIG. 21 , GR 1 denotes offset voltages included in the gamma voltages generated by a conventional gamma voltage generator, and GR 2 denotes offset voltages included in the gamma voltages generated by the gamma voltage generator that is configured to compensate the amplifier offset according to some example embodiments of the inventive concepts.

Referring to FIG. 21 , the offset voltages included in the gamma voltages generated by the conventional gamma voltage generator have a relatively large variation according to the gray level, but the offset voltages included in the gamma voltages GMA 11 , GMA 23 , GMA 35 , GMA 51 , GMA 87 , GMA 151 , GMA 203 , and GMA 255 generated by the gamma voltage generator configured to compensate the amplifier offset according to some example embodiments of the inventive concepts may have a relatively small variation according to the gray level.

As described above, the gamma voltage generator according to some example embodiments of the inventive concepts may measure an offset value of each of the amplifiers included in the gamma voltage generator, determine the values of polarities based on the offset values, provide the newly-determined values of the polarities to each of the amplifiers, and operate in a chopping mode to compensate the amplifier offset.

FIG. 22 is a circuit diagram illustrating an LCD device that includes the source driving circuit according to an example embodiment of the inventive concepts.

Referring to FIG. 22 , the LCD device 1000 may include a controller 1100 , a gate driving circuit 1200 , a source driving circuit 1300 , and a display panel 1400 .

The display panel 1400 may include thin film transistors (TFTs) located at each intersection of the matrix. The TFT may include a source, which receives a source signal (also called a “data signal”), and a gate which receives a gate signal (also called a “scan signal”). A storage capacitor C ST and a liquid crystal capacitor C LC may be connected between a drain of the TFT and a common voltage VCOM. The liquid crystal panel 1400 may receive the gate signals through gate lines G 1 to Gn, and the source signals through source lines D 1 to Dm. The gate driving circuit 1200 may apply the gate signals, each of which is a combination of an on-voltage Von and an off-voltage Voff, to a corresponding one of the gate lines G 1 to Gn.

The source driving circuit 1300 may generate gamma voltages GMA (not shown), which are related to brightness of the LCD device 1000 , perform a D/A conversion on data DATA received from the control circuit 1100 by using the gamma voltages GMA, and applies the converted data to the source lines D 1 to Dm.

The controller 1100 may receive RGB video signals R, G and B and control signals (e.g., a vertical sync signal Vsync, a horizontal sync signal Hsync, a main clock signal MCLK, and a data enable signal DE). The controller 1100 may generate source control signals CONT 1 and gate control signals CONT 2 based on the control signals, and properly process the RGB video signals R, G and B such that operational conditions of the display panel 1400 are satisfied. Then, the gate control signals CONT 2 may be transmitted to the gate driving circuit 1200 , and the source control signals CONT 1 and the video signals DATA (R, G, B) may be transmitted to the source driving circuit 1300 .

The gate driving circuit 1200 and the source driving circuit 1300 may include a plurality of gate driving chips (not shown) and a plurality of source driving chips, respectively. The data DATA may determine a gray level with respect to each pixel. The source driving circuit 1300 may apply the source signals to the source lines arranged on the display panel 1400 , and the gate driving circuit 1200 may apply the gate signals to the gate lines arranged on the display panel 1400 .

The source driving circuit 1300 included in the display device 1000 of FIG. 22 may have a configuration of the source driving circuit 100 of FIG. 1 . The output buffer circuit included in the source driving circuit 1300 may include a plurality of channel amplifiers, and each of the channel amplifiers may be configured to adjust an amount of current flowing through transistors connected to at least one of a non-inverted input terminal and an inverted input terminal of a differential input unit to compensate an amplifier offset, and adjust buffer input voltage signals to generate source signals. The output buffer circuit included in the source driving circuit 1300 may maintain a relatively very small internal offset value of an amplifier by selectively turning on NMOS transistors included in the amplifier offset compensating circuit. Therefore, the deviation of an output voltage of the source driving circuit 1300 may decrease. Further, the gamma voltage generator included in the source driving circuit 1300 may measure an offset value of each of the amplifiers included in the gamma voltage generator, determine the values of polarities based on the offset values, provide the newly-determined values of the polarities to each of the amplifiers, and operate in a chopping mode to compensate the amplifier offset.

In the above, a source driving circuit, and an LCD device having the source driving circuit were described. However, example embodiments of the inventive concepts may be applied to different display devices, for example, a plasma display panel (PDP), and an organic light emitting diode (OLED).

The output buffer circuit of a source driving circuit according to example embodiments of the inventive concepts may include a plurality of channel amplifiers. Each of the channel amplifiers may adjust an amount of current flowing through transistors connected to at least one of a non-inverted input terminal and an inverted input terminal of a differential input unit to compensate an amplifier offset, and adjust buffer input voltage signals to generate source signals.

The output buffer circuit included in the source driving circuit may maintain a relatively very small internal offset value of an amplifier by selectively turns on NMOS transistors included in the amplifier offset compensating circuit. Therefore, the deviation of an output voltage of the source driving circuit may decrease. Further, the gamma voltage generator included in the source driving circuit may measure an offset value of each of the amplifiers included in the gamma voltage generator, determine the values of polarities based on the offset values, provide the newly-determined values of the polarities to each of the amplifiers, and operate in a chopping mode to compensate the amplifier offset. Therefore, the source driving circuit of the display device according to example embodiments of the inventive concepts may be applied to a high resolution display device.

The example embodiments of the inventive concepts may be applied to source driving circuits and display devices including the same.

The foregoing is illustrative of example embodiments and is not to be construed as limiting thereof. Although a few example embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in the example embodiments without materially departing from the novel teachings and advantages of example embodiments. Accordingly, all such modifications are intended to be included within the scope of the inventive concepts as defined in the claims. In the claims, means-plus-function clauses are intended to cover the structures described herein as performing the recited function, and not only structural equivalents but also equivalent structures.