Image sensor pixel having storage gate implant with gradient profile

1. Field of the Disclosure

The present invention relates generally semiconductor processing. More specifically, examples of the present invention are related to semiconductor processing of image sensor pixel cell storage gates.

2. Background

For high-speed image sensors, a global shutter can be used to capture fast-moving objects. A global shutter typically enables all pixel cells in the image sensor to simultaneously capture the image. For slower moving objects, the more common rolling shutter is used. A rolling shutter normally captures the image in a sequence. For example, each row within a two-dimensional (“2D”) pixel cell array may be enabled sequentially, such that each pixel cell within a single row captures the image at the same time, but each row is enabled in a rolling sequence. As such, each row of pixel cells captures the image during a different image acquisition window. For slow moving objects the time differential between each row generates image distortion. For fast-moving objects, a rolling shutter causes a perceptible elongation distortion along the object's axis of movement.

To implement a global shutter, storage capacitors or storage transistors, which may also be referred to as storage gates herein, can be used to temporarily store the image charge acquired by each pixel cell in the array while it awaits readout from the pixel cell array. When a global shutter is used, a transfer transistor is typically used to transfer image charge from the photodiode to the storage transistor, and then an output transistor is used to transfer the stored image charge from the storage transistor to a readout node of the pixel cell.

Factors that affect performance in an image sensor pixel cell having a global shutter include shutter efficiency, dark current, white pixels and image lag. One tradeoff faced by designers when designing pixel cells is that as the structures of neighboring transistors (e.g., the transfer, storage transistors, and output transistors) are overlapped to reduce lag, some of the electrons become trapped in the deep implant regions between the neighboring transistors that cause “pinched” channels, which prevent some of the electrons from flowing to the output floating diffusions during transfer.

Non-limiting and non-exhaustive examples of the present invention are described with reference to the following figures, wherein like reference numerals refer to like parts throughout the various views unless otherwise specified.

FIG. 1 is a schematic illustrating one example of a pixel cell having a storage gate implant with gradient profile in accordance with the teachings of the present invention.

FIG. 2 is a cross-section view illustrating one example of a pixel cell having a storage gate implant with gradient profile in accordance with the teachings of the present invention.

FIG. 3A is a top-down view illustrating one example of a pixel cell storage gate implant with an effective gradient profile in accordance with the teachings of the present invention.

FIG. 3B is a top-down view illustrating another example of a pixel cell storage gate implant with an effective gradient profile in accordance with the teachings of the present invention.

FIG. 3C is a top-down view illustrating yet another example of a pixel cell storage gate implant with an effective gradient profile in accordance with the teachings of the present invention.

FIG. 4 is a diagram illustrating one example of an imaging system with a pixel array including pixel cells having storage gate implants with gradient profiles in accordance with the teachings of the present invention.

Corresponding reference characters indicate corresponding components throughout the several views of the drawings. Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of various embodiments of the present invention. Also, common but well-understood elements that are useful or necessary in a commercially feasible embodiment are often not depicted in order to facilitate a less obstructed view of these various embodiments of the present invention.

As will be shown, methods and apparatuses directed to an image sensor pixel having storage gate implant with a gradient profile are disclosed. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. In the following description numerous specific details are set forth to provide a thorough understanding of the embodiments. One skilled in the relevant art will recognize, however, that the techniques described herein can be practiced without one or more of the specific details, or with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.

Reference throughout this specification to “one embodiment,” an embodiment, “one example,” or “an example” means that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. Thus, the appearances of the phrases such as “in one embodiment” or “in one example” in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments or examples. The following is a detailed description of the terms and elements used in the description of examples of the present invention by referring to the accompanying drawings.

In typical image sensor pixel cells, most of the electrons that are trapped in pixel cells with overlapped deep implant regions are trapped between the transfer transistor and storage transistor structures due to deep storage transistor implants. Reductions in the overlap between transfer transistor and storage transistor can help to reduce the number of electrons that are trapped, but at the expense of increased photodiode to storage gate lag. Reducing storage gate implant energy could also help to reduce storage gate lag, but the risk of dark current and/or white pixels increases as a consequence. Reducing the storage gate dose could help to reduce storage gate lag, but at the expense of reduced full well capacity.

As will be shown, an imaging system with a pixel array including pixel cells having storage gate implants with gradient profiles in accordance with the teachings of the present invention enables an image sensor pixel cell array with a global shutter with reduced photodiode and storage gate transfer lag. Furthermore, as will be discussed, the risks of electrons being trapped on the transfer gate side of the pixel cell are also reduced with pixel cells having storage gate implants with gradient profiles in accordance with the teachings of the present invention.

To illustrate, FIG. 1 is a schematic illustrating one example of a pixel cell 100 having a storage gate implant 145 with gradient profile in accordance with the teachings of the present invention. For instance, in the depicted example, pixel cell 100 includes a global shutter transistor 110 , a photodiode 120 , a transfer transistor 130 , a storage transistor 140 , an output transistor 150 , a floating diffusion 170 , a reset transistor 160 , an amplifier transistor 180 , and a row-select transistor 190 coupled to a column bitline as shown. As illustrated in the example, the storage gate implant 145 under the gate of storage transistor 140 has a gradient doping profile in accordance with the teachings of the present invention. In particular, in one example, the effective doping level at the transfer gate side of the storage gate implant 145 is less than the effective doping level at the output gate side of the storage gate implant 145 in accordance with the teachings of the present invention. With the gradient doping profile of storage gate implant 145 as shown, a corresponding gradient potential profile is created. The resulting potential slope in storage gate implant 145 effectively pushes electrons in the storage gate towards the output gate side in accordance with the teachings of the present invention. Accordingly, the gradient profile in storage gate implant 145 reduces the storage gate electron density near the transfer gate side of storage gate implant 145 relative to the output gate side of storage gate implant 145 , and reduces the storage gate transfer lag in accordance with the teachings of the present invention.

FIG. 2 is a cross-section view illustrating one example of a pixel cell 200 having a storage gate implant 245 with gradient profile in accordance with the teachings of the present invention. It is noted that pixel cell 200 of FIG. 2 in one example is a cross-section view of pixel cell 100 of FIG. 1 , and that similarly named and numbered elements referenced below are coupled and function similar to as described above. As shown in the example depicted in FIG. 2 , pixel cell 200 is a front side illuminated (FSI) pixel cell that includes a photodiode 220 disposed in a semiconductor substrate 202 to accumulate image charge from light 206 , which is directed thereto. In another example, it is appreciated that pixel cell 200 may alternatively be implemented as a back side illuminated (BSI) pixel cell in accordance with the teachings of the present invention. Referring back to the example illustrated in FIG. 2 , the image charges accumulated in photodiode 220 are electrons. In other examples, it is appreciated that the image charges accumulated in photodiode 220 may be holes. In one example, light 206 is representative of a portion of an image directed through a lens to pixel cell 200 . In one example, a global shutter transistor, including a shutter gate 210 disposed over gate oxide 204 and semiconductor substrate 202 , is included in pixel cell 200 , which may be utilized in order to selectively deplete (photo-voltaically generated) charges in photodiode 220 . A storage transistor, including a storage gate 240 disposed over gate oxide 204 and semiconductor substrate 202 , is disposed in the semiconductor substrate 202 to store the image charge. A transfer transistor, including a transfer gate 230 disposed over gate oxide 204 and semiconductor substrate 202 , is disposed between the photodiode 220 and the storage transistor to selectively transfer the image charge from the photodiode 220 to the storage transistor to store the image charge accumulated by photodiode 220 in the storage transistor. An output transistor, including an output gate 250 disposed over gate oxide 204 and semiconductor substrate 202 , is disposed in the semiconductor substrate 202 and coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node, which in one example includes the floating diffusion 270 disposed in the semiconductor substrate 202 . In one example, shutter gate 210 , transfer gate 230 , storage gate 240 and output gate 250 include polysilicon.

Continuing with the example depicted in FIG. 2 , a storage gate implant 245 is implanted in semiconductor substrate 202 with a gradient profile as shown. In particular, in one example, the effective doping level at the transfer gate 230 side of the storage gate implant 245 is less than the effective doping level at the output gate 250 side of the storage gate implant 245 in accordance with the teachings of the present invention. Accordingly, with the gradient doping profile of storage gate implant 245 as shown, a corresponding gradient potential profile is created. As shown in FIG. 2 , the electron potential 242 in the storage gate implant 245 decreases from the transfer gate 230 side to output gate 250 side, which creates a potential slope in storage gate implant 245 that effectively pushes electrons in the storage gate towards the output gate 250 side in accordance with the teachings of the present invention. Accordingly, the gradient profile in storage gate implant 245 reduces the storage gate electron density near the transfer gate 230 side of storage gate implant 245 , and reduces the storage gate transfer lag in accordance with the teachings of the present invention.

FIG. 3A is a top-down view illustrating one example of a pixel cell storage gate implant 345 A with an effective gradient profile in the semiconductor substrate under the storage gate transistor in accordance with the teachings of the present invention. It is noted that storage gate implant 345 A of FIG. 3A in one example is a top-down view of storage gate implant 145 of FIG. 1 , or storage gate implant 245 of FIG. 2 , and that similarly named and numbered elements referenced below are coupled and function similar to as described above. As shown in the example depicted in FIG. 3A , storage gate implant 345 A includes a plurality of regions 346 A and 348 A, with each region 346 A and 348 A having different effective doping concentrations that increase from the transfer gate side 330 to the output gate side 350 in accordance with the teachings of the present invention.

In the specific example depicted in FIG. 3A , in region 346 A towards the output gate side 350 of the storage gate implant 345 A, there is a storage gate implant of dopants into the semiconductor substrate. In one example, the dopants in storage gate implant 345 A are N type dopants. However, in regions 348 A towards the transfer gate side 330 of the storage gate implant 345 A, dopants are not implanted, which define multiple “fingers” 347 A of implanted dopants and gaps between “fingers” 347 A of no implanted dopants on the transfer gate side 330 of the storage gate implant 345 A in accordance with the teachings of the present invention.

In one example, after region 346 A with “fingers” 347 A have been implanted into the semiconductor substrate as shown, the semiconductor substrate is then annealed, which allows the some of the implanted dopants to move around in the semiconductor substrate from areas of higher doping concentration to areas of lower doping concentration. With the dopant gradient between region 346 A with “fingers” 347 A, which have higher doping concentrations, and regions 348 A, which have lower doping concentrations, some of the implanted dopants will therefore move across the boundary between regions 346 A and 348 A from region 346 A and “fingers” 347 A into region 348 A as a result of the annealing. In other words, in the example depicted in FIG. 3A , some of the implanted dopants will move from region 346 A with “fingers” 347 A into regions 348 A, and the net result will be a dopant gradient between the OG side 350 and the TX side 330 of storage gate implant 345 A in accordance with the teachings of the present invention.

In the example depicted in FIG. 3A , it is noted that the mask used to implant the dopants into region 346 A is illustrated having a gap to “finger” 347 A width ratios fixed at 1:1. It is appreciated that the gap to “finger” 347 A width ratios may be varied, for example from 0.5:1 to 1.5:1, which allows the gradient in storage gate implant 345 A to be further adjusted in accordance with the teachings of the present invention. It is appreciated that example 0.5:1 to 1.5:1 ratio is provided for explanation purposes, and that in other examples, other varied gap to “finger” 347 A widths ratios may be utilized in accordance with the teachings of the present invention.

Accordingly, with the multiple “fingers” 347 A of implanted dopants and no implanted dopants that are defined by regions 346 A, 347 A and 348 A as shown in the example of FIG. 3A , and with the annealing as described, an effective gradient profile for storage gate implant 345 A is provided in accordance with the teachings of the present invention. As a result, the effective doping level at the transfer gate side 330 of the storage gate implant 345 A is less than the effective doping level at the output gate side 350 of the storage gate implant 345 A in accordance with the teachings of the present invention. Thus, with the gradient doping profile of storage gate implant 345 A as shown, a corresponding gradient potential profile is created. As shown in FIG. 3A , the electron potential 342 in the storage gate implant 345 A decreases from the transfer gate side 330 to output gate side 350 , which creates a potential slope in storage gate implant 345 A that prevents electrons from being trapped at the transfer gate side 330 and effectively pushes electrons in the storage gate towards the output gate side 350 before being transferred to the floating diffusion in accordance with the teachings of the present invention. Accordingly, the gradient profile in storage gate implant 345 A reduces the storage gate electron density near the transfer gate side 330 of storage gate implant 345 A, and reduces the storage gate transfer lag in accordance with the teachings of the present invention. Furthermore, in the example depicted in FIG. 3A , it is appreciated that the gradient profile of storage gate implant 345 A can be realized with only a single mask to provide region 346 A with the multiple “fingers” 347 A, a single implantation step, and an annealing step as discussed above in accordance with the teachings of the present invention.

FIG. 3B is a top-down view illustrating another example of a pixel cell storage gate implant 345 B with an effective gradient profile in accordance with the teachings of the present invention. It is noted that storage gate implant 345 B of FIG. 3B in one example is a top-down view of storage gate implant 145 of FIG. 1 , or storage gate implant 245 of FIG. 2 , and that similarly named and numbered elements referenced below are coupled and function similar to as described above. As shown in the example depicted in FIG. 3B , storage gate implant 345 B includes a plurality of regions 346 B and 348 B, with each region 346 B and 348 B having different effective doping concentrations that increase from the transfer gate side 330 to the output gate side 350 in accordance with the teachings of the present invention.

In the specific example depicted in FIG. 3B , in region 348 B towards the transfer gate side 330 of the storage gate implant 345 B, there is a first storage gate implant of dopants, which is labeled “SG 1 implant,” into the semiconductor substrate. In one example, the dopants in storage gate implant 345 B are N type dopants. However, in region 346 B towards the output gate side 350 of the storage gate implant 345 B, there is an additional second implant of dopants, which is correspondingly labeled “SG 1 +SG 2 implants.”

In one example, after regions 346 B and 348 B have been implanted into the semiconductor substrate as shown, the semiconductor substrate may then annealed, which allows the some of the implanted dopants to move around in the semiconductor substrate from areas of higher doping concentration to areas of lower doping concentration. With the dopant gradient between region 346 B, which has a higher doping concentration, and region 348 B, which has a lower doping concentration, some of the implanted dopants will therefore move across the boundary between regions 346 B and 348 B from region 346 B into region 348 B as a result of the annealing. In other words, in the example depicted in FIG. 3B , some of the implanted dopants will move from region 346 B into region 348 B and the net result will be a dopant gradient between the OG side 350 and the TX side 330 of storage gate implant 345 B in accordance with the teachings of the present invention.

Accordingly, with an increasing number of implants of dopants into the storage gate implant 345 B from the transfer gate side 330 towards the output gate side 350 as shown in the example of FIG. 3B , an effective gradient profile for storage gate implant 345 B is provided in accordance with the teachings of the present invention. As a result, the effective doping level at the transfer gate side 330 of the storage gate implant 345 B is less than the effective doping level at the output gate side 350 of the storage gate implant 345 B in accordance with the teachings of the present invention. Thus, with the gradient doping profile of storage gate implant 345 B as shown, a corresponding gradient potential profile is created. As shown in FIG. 3B , the electron potential 342 in the storage gate implant 345 B decreases from the transfer gate side 330 to output gate side 350 , which creates a potential slope in storage gate implant 345 B that prevents electrons from being trapped at the transfer gate side 330 and effectively pushes electrons in the storage gate towards the output gate side 350 before being transferred to the floating diffusion in accordance with the teachings of the present invention. Accordingly, the gradient profile in storage gate implant 345 B reduces the storage gate electron density near the transfer gate side 330 of storage gate implant 345 B, and reduces the storage gate transfer lag in accordance with the teachings of the present invention.

FIG. 3C is a top-down view illustrating yet another example of a pixel cell storage gate implant 345 C with an effective gradient profile in accordance with the teachings of the present invention. It is noted that storage gate implant 345 C of FIG. 3C in one example is a top-down view of storage gate implant 145 of FIG. 1 , or storage gate implant 245 of FIG. 2 , and that similarly named and numbered elements referenced below are coupled and function similar to as described above. It is also appreciated that storage gate implant 345 C of FIG. 3C shares many similarities with storage gate implant 345 B of FIG. 3B . One difference between storage gate implant 345 C of FIG. 3C and storage gate implant 345 B of FIG. 3B is that storage gate implant 345 C of FIG. 3C includes an additional region in, which is illustrated as a plurality of regions 346 C, 348 C, and 348 D, with each region 346 C, 348 C, and 348 D having different effective doping concentrations that increase from the transfer gate side 330 to the output gate side 350 in accordance with the teachings of the present invention.

In the specific example depicted in FIG. 3C , in region 348 D towards the transfer gate side 330 of the storage gate implant 345 C, there is a first storage gate implant of dopants, which is labeled “SG 1 implant,” into the semiconductor substrate. In one example, the dopants in storage gate implant 345 C are N type dopants. In the example, moving towards the output gate side 350 , there is another region 348 C in which there is an additional storage gate implant of dopants, which is correspondingly labeled “SG 1 +SG 2 implants.” Continuing towards the output gate side 350 , there is still another region 346 C in which there is yet another additional storage gate implant of dopants, which is correspondingly labeled “SG 1 +SG 2 +SG 3 implants.”

In one example, after regions 346 C, 348 C and 348 D have been implanted into the semiconductor substrate as shown, the semiconductor substrate is then annealed, which allows the some of the implanted dopants to move around in the semiconductor substrate from areas of higher doping concentration to areas of lower doping concentration. With the dopant gradients between region 346 C, which has a higher doping concentration, region 348 C, which has a lower doping concentration, and region 348 D, which has an even lower doping concentration than region 348 C, some of the implanted dopants will therefore move across the boundaries between regions 346 C and 348 C, and 348 C and 348 D, from region 346 C into region 348 C, and from region 348 C into 348 D, as a result of the annealing. In other words, in the example depicted in FIG. 3C , some of the implanted dopants will move from region 346 C into region 348 C, and from 348 C into region 348 D, and the net result will be a dopant gradient between the OG side 350 and the TX side 330 of storage gate implant 345 C in accordance with the teachings of the present invention.

Accordingly, with an increasing number of implants of dopants into the storage gate implant 345 C from the transfer gate side 330 towards the output gate side 350 as shown in the example of FIG. 3C , an effective gradient profile for storage gate implant 345 C is provided in accordance with the teachings of the present invention. As a result, the effective doping level at the transfer gate side 330 of the storage gate implant 345 C is less than the effective doping level at the output gate side 350 of the storage gate implant 345 C in accordance with the teachings of the present invention. Thus, with the gradient doping profile of storage gate implant 345 C as shown, a corresponding gradient potential profile is created. As shown in FIG. 3C , the electron potential 342 in the storage gate implant 345 C decreases from the transfer gate side 330 to output gate side 350 , which creates a potential slope in storage gate implant 345 C that prevents electrons from being trapped at the transfer gate side 330 and effectively pushes electrons in the storage gate towards the output gate side 350 before being transferred to the floating diffusion in accordance with the teachings of the present invention. Accordingly, the gradient profile in storage gate implant 345 C reduces the storage gate electron density near the transfer gate side 330 of storage gate implant 345 C, and reduces the storage gate transfer lag in accordance with the teachings of the present invention.

FIG. 4 is a diagram illustrating one example of an imaging system 491 including a pixel array having pixel cells including storage gate implants with gradient profiles in accordance with the teachings of the present invention. As shown in the depicted example, imaging system 491 includes pixel array 492 coupled to control circuitry 498 and read out circuitry 494 , which is coupled to function logic 496 .

In one example, pixel array 492 is a two-dimensional (2D) array of image sensor pixel cells (e.g., pixels P 1 , P 2 , P 3 , . . . , Pn). It is noted that the pixel cells P 1 , P 2 , . . . Pn in the pixel array 492 may be examples of pixel cell 100 of FIG. 1 and/or of pixel cell 200 of FIG. 2 , and that similarly named and numbered elements referenced below are coupled and function similar to as described above. As illustrated, each pixel cell is arranged into a row (e.g., rows R 1 to Ry) and a column (e.g., column C 1 to Cx) to acquire image data of a person, place, object, etc., which can then be used to render a 2D image of the person, place, object, etc.

In one example, after each pixel cell P 1 , P 2 , P 3 , . . . , Pn has acquired its image data or image charge, the image data is read out by read out circuitry 494 and then transferred to function logic 496 . In various examples, read out circuitry 494 may include amplification circuitry, analog-to-digital (ADC) conversion circuitry, or otherwise. Function logic 496 may simply store the image data or even manipulate the image data by applying post image effects (e.g., crop, rotate, remove red eye, adjust brightness, adjust contrast, or otherwise). In one example, read out circuitry 494 may read out a row of image data at a time along read out column lines (illustrated) or may read out the image data using a variety of other techniques (not illustrated), such as a serial read out or a full parallel readout of all pixels simultaneously.

In one example, control circuitry 498 is coupled to pixel array 492 to control operational characteristics of pixel array 492 . In one example, control circuitry 498 is coupled to generate a global shutter signal for controlling image acquisition for each pixel cell. In the example, the global shutter signal simultaneously enables all pixels cells P 1 , P 2 , P 3 , . . . Pn within pixel array 492 to simultaneously enable all of the pixel cells in pixel array 492 to simultaneously transfer the image charge from each respective photodiode during a single acquisition window.

The above description of illustrated examples of the present invention, including what is described in the Abstract, are not intended to be exhaustive or to be limitation to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible without departing from the broader spirit and scope of the present invention. Indeed, it is appreciated that the specific example voltages, currents, frequencies, power range values, times, etc., are provided for explanation purposes and that other values may also be employed in other embodiments and examples in accordance with the teachings of the present invention.

These modifications can be made to examples of the invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification and the claims. Rather, the scope is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation. The present specification and figures are accordingly to be regarded as illustrative rather than restrictive.