Nonvolatile semiconductor memory device

This application is based upon and claims the benefit of priority from U.S. Provisional Patent Application 61/874,000, filed on Sep. 5, 2013; the entire contents of which are incorporated herein by reference.

Embodiments described herein relate generally to a nonvolatile semiconductor device.

A nonvolatile semiconductor memory device includes a memory cell region and a peripheral region disposed at a periphery of the memory cell region. Data information can be stored in the memory cell region. On the other hand, a control circuit for driving the memory cells provided in the memory cell region etc. are provided in the peripheral region.

Elements such as a resistance element and a capacitor may be incorporated into such a circuit. In the nonvolatile semiconductor memory device, layers, electrodes, etc. formed in the memory cell region may be diverted when elements are formed in the peripheral region.

FIG. 1 is a layout showing a nonvolatile semiconductor memory device according to a first embodiment;

FIG. 2A is a schematic plan view showing part of the memory cell region of the nonvolatile semiconductor memory device according to the first embodiment, FIG. 2B is a cross-sectional view taken along line B-B′ in FIG. 2A , and FIG. 2C is a cross-sectional view taken along line C-C′ in FIG. 2A ;

FIG. 3A is a schematic cross-sectional view showing a resistance element provided in the peripheral region of the nonvolatile semiconductor memory device according to the first embodiment, and FIG. 3B is a schematic cross-sectional view showing a capacitor provided in the peripheral region of the nonvolatile semiconductor memory device according to the first embodiment;

FIG. 4A to FIG. 5B are schematic cross-sectional views showing the manufacturing process of forming a resistance element in the peripheral region according to the first embodiment;

FIG. 6A to FIG. 7B are schematic cross-sectional views showing the manufacturing process of forming a capacitor in the peripheral region according to the first embodiment;

FIG. 8A is a schematic cross-sectional view showing a resistance element provided in the peripheral region of a nonvolatile semiconductor memory device according to the reference example, and FIG. 8B is a schematic cross-sectional view showing a capacitor provided in the peripheral region of the nonvolatile semiconductor memory device according to the reference example;

FIG. 9A is a schematic cross-sectional view showing a resistance element provided in the peripheral region of a nonvolatile semiconductor memory device according to a second embodiment, and FIG. 9B is a schematic cross-sectional view showing a capacitor provided in the peripheral region of the nonvolatile semiconductor memory device according to the second embodiment;

FIG. 10A to FIG. 11B are schematic cross-sectional views showing the manufacturing process of forming a resistance element in the peripheral region according to the second embodiment; and

FIG. 12A to FIG. 13C are schematic cross-sectional views showing the manufacturing process of forming a capacitor in the peripheral region according to the second embodiment.

In general, according to one embodiment, a nonvolatile semiconductor memory device, includes: a memory cell region; and a peripheral region disposed at a periphery of the memory cell region, the memory cell region including: a semiconductor layer including a plurality of semiconductor regions extending in a first direction, and the semiconductor layer being arranged in a direction crossing the first direction; a plurality of control gate electrodes provided on an upper side of the plurality of semiconductor regions, the control gate electrodes extending in a second direction crossing the first direction, and the control gate electrodes being arranged in a direction crossing the second direction; a first insulating film provided on a lower side of each of the plurality of control gate electrodes, and the first insulating film being in contact with the plurality of control gate electrodes; a semiconductor-containing layer provided at a crossing position of each of the plurality of semiconductor regions and the first insulating film, and the semiconductor-containing layer having a smaller thickness than the first insulating film; and a second insulating film provided between the semiconductor-containing layer and each of the plurality of semiconductor regions, the peripheral region including: the semiconductor layer; a third insulating film provided on the semiconductor layer; the semiconductor-containing layer provided on the third insulating film, and a periphery of the semiconductor-containing layer being surrounded by an element isolation region; the first insulating film provided on the semiconductor-containing layer; and a pair of conductive layers extending from a surface of the first insulating film to reach the third insulating film via the semiconductor-containing layer, and the pair of conductive layers being in contact with part of a lower surface of the semiconductor-containing layer.

Hereinbelow, embodiments are described with reference to the drawings. In the following description, identical components are marked with the same reference numerals, and a description of components once described is omitted as appropriate.

First Embodiment

FIG. 1 is a layout showing a nonvolatile semiconductor memory device according to a first embodiment.

A nonvolatile semiconductor memory device 1 includes a NAND flash memory. In the nonvolatile semiconductor memory device 1 , a memory cell region 100 , a row-direction end region 100 a of the memory cell region 100 , a sense amplifier region 1 s , a row decoder region 1 r , and a peripheral region 200 are disposed. In the embodiment, the sense amplifier region 1 s , the row decoder region 1 r , and the peripheral region 200 may be collectively referred to as a peripheral region. The peripheral region 200 is disposed at a periphery of the memory cell region 100 . In the memory cell region 100 , memory strings in each of which select gate transistors are connected to both ends of a column in which a plurality of nonvolatile memory cell transistors 121 are connected in series are arranged in a matrix configuration.

FIG. 2A is a schematic plan view showing part of the memory cell region of the nonvolatile semiconductor memory device according to the first embodiment, FIG. 2B is a cross-sectional view taken along line B-B′ in FIG. 2A , and FIG. 2C is a cross-sectional view taken along line C-C′ in FIG. 2A .

The memory cell region 100 of the nonvolatile semiconductor memory device 1 includes a semiconductor layer 10 , a control gate electrode 60 , a block insulating film 40 A, a floating gate layer 30 A (a semiconductor-containing layer), and a tunnel insulating film 20 . The memory cell region 100 has a planar floating gate cell structure.

The semiconductor layer 10 is a layer obtained by fragmenting a semiconductor wafer, for example, and includes a plurality of semiconductor regions 11 on its surface side. The plurality of semiconductor regions 11 extend in the Y-direction (a first direction), and are arranged in a direction crossing the Y-direction. The semiconductor region 11 is a region of the semiconductor layer 10 in which an impurity element is introduced. The semiconductor region 11 is an active area that the transistor of the nonvolatile semiconductor memory device 1 occupies. An element isolation region 50 is provided between adjacent semiconductor regions 11 ( FIG. 2B ). A diffusion region (a source drain region) is provided in the semiconductor region 11 on both sides of the tunnel insulating film 20 in the Y-direction shown in FIG. 2C (not shown).

A plurality of control gate electrodes 60 are provided on the upper side of the plurality of semiconductor regions 11 . The plurality of control gate electrodes 60 extend in the X-direction (a second direction) crossing the Y-direction. The plurality of control gate electrodes 60 are arranged in a direction crossing the X-direction.

The block insulating film 40 A is provided on the lower side of each of the plurality of control gate electrodes 60 . The block insulating film 40 A is in contact with the control gate electrode 60 . The block insulating film 40 A is provided between the floating gate layer 30 A and the control gate electrode 60 . The block insulating film 40 A extends in the X-direction. The block insulating film 40 A is located on the upper side of the upper end of the floating gate layer 30 A. The thickness of the block insulating film 40 A is 20 nm or less, for example.

The floating gate layer 30 A is provided in a position where each of the plurality of semiconductor regions 11 and the block insulating film 40 A cross each other. The thickness of the floating gate layer 30 A is thinner than the thickness of the block insulating film 40 A. The thickness of the floating gate layer 30 A is 10 nm or less, for example.

The floating gate layer 30 A is provided on the tunnel insulating film 20 . The floating gate layer 30 A can store a charge that has tunneled from the semiconductor region 11 via the tunnel insulating film 20 . The floating gate layer 30 A may be referred to as a charge storage layer.

The tunnel insulating film 20 is provided between the floating gate layer 30 A and each of the plurality of semiconductor regions 11 . The tunnel insulating film 20 allows a charge (e.g. electrons) to tunnel between the semiconductor region 11 and the floating gate layer 30 A. The thickness of the tunnel insulating film 20 is 10 nm or less, for example.

The control gate electrode 60 covers the floating gate layer 30 A via the block insulating film 40 A. The control gate electrode 60 is provided on the upper side of the block insulating film 40 A. The control gate electrode 60 functions as a gate electrode for controlling the transistor. The thickness of the control gate electrode 60 is 60 nm or less, for example.

In the case where a stacked body including the tunnel insulating film 20 , the floating gate layer 30 A, the block insulating film 40 A, and the control gate electrode 60 is used as a memory cell, an insulating layer 70 is provided between adjacent memory cells. In other words, the upper surface and the side surface of the floating gate layer 30 A are covered with the block insulating film 40 A, the tunnel insulating film 20 , and the insulating layer 70 , and the charge stored in the floating gate layer 30 A is prevented from leaking to the control gate electrode 60 and the semiconductor region 11 .

FIG. 3A is a schematic cross-sectional view showing a resistance element provided in the peripheral region of the nonvolatile semiconductor memory device according to the first embodiment, and FIG. 3B is a schematic cross-sectional view showing a capacitor provided in the peripheral region of the nonvolatile semiconductor memory device according to the first embodiment.

In the peripheral region 200 shown in FIG. 3A , an insulating film 21 is provided on the semiconductor layer 10 . The components and configuration of the insulating film 21 may be the same as the components and configuration of the tunnel insulating film 20 , for example.

A semiconductor-containing layer 30 B is provided on the insulating film 21 . The semiconductor-containing layer 30 B can be formed simultaneously with the floating gate layer 30 A in the memory cell region 100 by the same manufacturing process. In this case, the components of the semiconductor-containing layer 30 B are the same as the components of the floating gate layer 30 A. Furthermore, the thickness of the semiconductor-containing layer 30 B is the same as the thickness of the floating gate layer 30 A.

The periphery of the semiconductor-containing layer 30 B is surrounded by an element isolation region 51 . The semiconductor-containing layer 30 B is insulated from the semiconductor layer 10 by the element isolation region 51 . The element isolation region 51 further surrounds the periphery of the insulating film 21 on the lower side of the semiconductor-containing layer 30 B.

An insulating film 40 B is provided on the semiconductor-containing layer 30 B. The insulating film 40 B can be formed simultaneously with the block insulating film 40 A in the memory cell region 100 by the same manufacturing process. In this case, the components of the insulating film 40 B are the same as the components of the block insulating film 40 A. Furthermore, the thickness of the insulating film 40 B is the same as the thickness of the block insulating film 40 A.

In the peripheral region 200 shown in FIG. 3A , a pair of conductive layers 61 and 62 that extend from the surface of the insulating film 40 B to reach the insulating film 21 via the semiconductor-containing layer 30 B are provided. Each of the conductive layers 61 and 62 wraps around to the lower side of the semiconductor-containing layer 30 B, and is in contact with part of the lower surface 30 Bd of the semiconductor-containing layer 30 B.

Each of the conductive layers 61 and 62 can be formed simultaneously with the control gate electrode 60 in the memory cell region 100 by the same manufacturing process. In this case, the components and configuration of each of the conductive layers 61 and 62 are the same as the components and configuration of the control gate electrode 60 , for example.

A contact electrode 71 is connected to the conductive layer 61 . A contact electrode 72 is connected to the conductive layer 62 . The conductive layers 61 and 62 , the contact electrodes 71 and 72 , and the insulating film 40 B are covered with the insulating layer 70 .

In the peripheral region 200 shown in FIG. 3A , the semiconductor-containing layer 30 B connecting the conductive layer 61 and the conductive layer 62 forms a resistance element.

The thickness of the insulating film 21 may be thicker than the thickness of the tunnel insulating film 20 . The film thickness of the insulating film 21 is adjusted to such a film thickness that dielectric breakdown does not occur between the conductive layer 61 and the semiconductor layer 10 when a prescribed voltage is applied between the conductive layer 61 and the semiconductor layer 10 , or dielectric breakdown does not occur between the conductive layer 62 and the semiconductor layer 10 when a prescribed voltage is applied between the conductive layer 62 and the semiconductor layer 10 , for example. The thickness of the insulating film 21 is 50 nm or less, for example.

In the peripheral region 200 shown in FIG. 3B , an insulating film 22 is provided on the semiconductor layer 10 . A semiconductor-containing layer 30 C is provided on the insulating film 22 . The periphery of the semiconductor-containing layer 30 C is surrounded by an element isolation region 52 . The element isolation region 52 surrounds the periphery of the insulating film 22 on the lower side of the semiconductor-containing layer 30 C.

The semiconductor-containing layer 30 C can be formed simultaneously with the floating gate layer 30 A in the memory cell region 100 by the same manufacturing process. In this case, the components of the semiconductor-containing layer 30 C are the same as the components of the floating gate layer 30 A. Furthermore, the thickness of the semiconductor-containing layer 30 C is the same as the thickness of the floating gate layer 30 A.

An insulating film 40 C is provided on the semiconductor-containing layer 30 C. The insulating film 40 C can be formed simultaneously with the block insulating film 40 A in the memory cell region 100 by the same manufacturing process. In this case, the components of the insulating film 40 C are the same as the components of the block insulating film 40 A. Furthermore, the thickness of the insulating film 40 C is the same as the thickness of the block insulating film 40 A.

In the peripheral region 200 shown in FIG. 3B , a conductive layer 63 extends from the surface of the insulating film 40 C to reach the insulating film 22 via the semiconductor-containing layer 30 C. The conductive layer 63 wraps around to the lower side of the semiconductor-containing layer 30 C, and is in contact with part of the lower surface 30 Cd of the semiconductor-containing layer 30 C. A conductive layer 64 is provided on the semiconductor-containing layer 30 C via the insulating film 40 C.

Each of the conductive layers 63 and 64 can be formed simultaneously with the control gate electrode 60 in the memory cell region 100 by the same manufacturing process. In this case, the components and configuration of each of the conductive layers 63 and 64 are the same as the components and configuration of the control gate electrode 60 , for example.

A contact electrode 73 is connected to the conductive layer 63 . A contact electrode 74 is connected to the conductive layer 64 . The conductive layers 63 and 64 , the contact electrodes 73 and 74 , and the insulating film 40 C are covered with the insulating layer 70 .

In the peripheral region 200 shown in FIG. 3B , the semiconductor-containing layer 30 C, the conductive layer 64 , and the insulating film 40 C sandwiched by the semiconductor-containing layer 30 C and the conductive layer 64 form a capacitor.

The thickness of the insulating film 22 may be still thicker than the thickness of the insulating film 21 . The film thickness of the insulating film 22 is adjusted to such a film thickness that dielectric breakdown does not occur between the conductive layer 63 and the semiconductor layer 10 when a prescribed voltage is applied between the conductive layer 63 and the semiconductor layer 10 , for example.

When using the capacitor mentioned above, there is a case where a voltage higher than the voltage applied between the conductive layer 61 and the semiconductor layer 10 or between the conductive layer 62 and the semiconductor layer 10 is applied between the conductive layer 63 and the semiconductor layer 10 or between the conductive layer 64 and the semiconductor layer 10 . Even in such a case, sufficient insulation is maintained between the conductive layer 63 and the semiconductor layer 10 by setting the thickness of the insulating film 22 thicker than the thickness of the insulating film 21 .

The material of the semiconductor layer 10 (or the semiconductor region 11 ) is a silicon crystal, for example. The material of the tunnel insulating film 20 and the insulating films 21 and 22 is silicon oxide (SiO x ), for example.

The material of the floating gate layer 30 A and the semiconductor-containing layers 30 B and 30 C is polysilicon (poly-Si) or the like.

The block insulating film 40 A and the insulating films 40 B and 40 C are a single-layer film containing one of an oxide containing at least one of silicon (Si), aluminum (Al), hafnium (Hf), zirconium (Zr), tantalum (Ta), and lanthanum (La), a nitride containing at least one of Si, Al, Hf, Zr, Ta, and La, and an oxynitride containing at least one of Si, Al, Hf, Zr, Ta, and La, or a stacked film in which at least two of the single-layer film containing an oxide mentioned above, the single-layer film containing a nitride mentioned above, and the single-layer film containing an oxynitride mentioned above are stacked.

The material of the control gate electrode 60 and the conductive layers 61 to 64 is tungsten, tungsten nitride, or the like, for example.

In the embodiment, the material of portions referred to as element isolation regions, insulating films, or insulating layers is silicon oxide (SiO 2 ), for example.

FIG. 4A to FIG. 5B are schematic cross-sectional views showing the manufacturing process of forming a resistance element in the peripheral region according to the first embodiment.

First, as shown in FIG. 4A , a stacked body 15 in which the insulating film 21 is provided on the semiconductor layer 10 , the semiconductor-containing layer 30 B is provided on the insulating film 21 , and the insulating film 40 B is provided on the semiconductor-containing layer 30 B is prepared. Here, the thickness of the insulating film 21 may be formed thicker than the thickness of the tunnel insulating film 20 . The element isolation region 51 that surrounds the periphery of the semiconductor-containing layer 30 B is formed.

Subsequently, photolithography and RIE (reactive ion etching) processing are performed on the stacked body 15 to form a pair of contact holes 15 h extending from the surface of the insulating film 40 B to the insulating film 21 .

Next, as shown in FIG. 4B , a wet etching solution is introduced into the pair of contact holes 15 h to perform isotropic etching on the surface of the insulating film 21 exposed at the contact holes 15 h . Here, as the etching solution, a solution whereby the etching rate of the insulating film 21 is higher than the etching rate of the semiconductor-containing layer 30 B and the insulating film 40 B is selected. For example, a dilute hydrofluoric acid solution is used as the solution.

By the wet etching, the surface of the insulating film 21 exposed at the contact hole 15 h is selectively removed, and a space 21 sp leading to the contact hole 15 h is formed on the lower side of the semiconductor-containing layer 30 B. The space 21 sp has a wider width than the contact hole 15 h . Here, the width according to the embodiment is defined by the width in a direction parallel to the major surface of the semiconductor layer 10 , for example. In the space 21 sp , part of the lower surface 30 Bd of the semiconductor-containing layer 30 B is exposed.

Next, as shown in FIG. 4C , a conductive layer 68 is formed on the insulating film 40 B, in the contact hole 15 h , and in the space 21 sp . The formation of the conductive layer 68 is performed by CVD (chemical vapor deposition) with good step coatability. The components of the conductive layer 68 are the same as the components of the conductive layers 61 and 62 described above.

Next, as shown in FIG. 5A , photolithography and RIE processing are performed on the conductive layer 68 to separate the conductive layer 68 into the conductive layer 61 and the conductive layer 62 . In this stage, the conductive layers 61 and 62 that wrap around to the lower side of the semiconductor-containing layer 30 B and reach part of the lower surface 30 Bd of the semiconductor-containing layer 30 B are formed. Subsequently, the insulating layer 70 that covers the conductive layers 61 and 62 is formed by CVD.

Next, as shown in FIG. 5B , photolithography and RIE are performed on the insulating layer 70 , and a contact hole 70 h that exposes part of each of the conductive layers 61 and 62 is formed in the insulating layer 70 . After that, as shown in FIG. 3A , the contact electrodes 71 and 72 are formed in the contact holes 70 h . Through such manufacturing processes, a resistance element is formed in the peripheral region 200 .

FIG. 6A to FIG. 7B are schematic cross-sectional views showing the manufacturing process of forming a capacitor in the peripheral region according to the first embodiment.

First, as shown in FIG. 6A , a stacked body 16 in which the insulating film 22 is provided on the semiconductor layer 10 , the semiconductor-containing layer 30 C is provided on the insulating film 22 , and the insulating film 40 C is provided on the semiconductor-containing layer 30 C is prepared. Here, the thickness of the insulating film 22 may be formed thicker than the thickness of the insulating film 21 . The element isolation region 52 that surrounds the periphery of the semiconductor-containing layer 30 C is formed.

Subsequently, photolithography and RIE processing are performed on the stacked body 16 to form a contact hole 16 h extending from the surface of the insulating film 40 C to the insulating film 22 .

Next, as shown in FIG. 6B , a wet etching solution is introduced into the contact hole 16 h to perform isotropic etching on the surface of the insulating film 22 exposed at the contact hole 16 h . Here, a dilute hydrofluoric acid solution is used as the etching solution.

By the wet etching, the surface of the insulating film 22 exposed at the contact hole 16 h is selectively etched, and a space 22 sp leading to the contact hole 16 h is formed on the lower side of the semiconductor-containing layer 30 C. The space 22 sp has a wider width than the contact hole 16 h . In the space 22 sp , part of the lower surface 30 Cd of the semiconductor-containing layer 30 C is exposed.

Next, as shown in FIG. 6C , a conductive layer 69 is formed on the insulating film 40 C, in the contact hole 16 h , and in the space 22 sp . The formation of the conductive layer 69 is performed by CVD. The components of the conductive layer 69 are the same as the components of the conductive layers 63 and 64 described above.

Next, as shown in FIG. 7A , photolithography and RIE processing are performed on the conductive layer 69 to separate the conductive layer 69 into the conductive layer 63 and the conductive layer 64 . In this stage, the conductive layer 63 that wraps around to the lower side of the semiconductor-containing layer 30 C and reaches part of the lower surface 30 Cd of the semiconductor-containing layer 30 C is formed. Subsequently, the insulating layer 70 that covers the conductive layers 63 and 64 is formed by CVD.

Next, as shown in FIG. 7B , photolithography and RIE are performed on the insulating layer 70 , and a contact hole 70 h that exposes part of each of the conductive layers 63 and 64 is formed in the insulating layer 70 . After that, as shown in FIG. 3B , the contact electrodes 73 and 74 are formed in the contact holes 70 h . Through such manufacturing processes, a capacitor is formed in the peripheral region 200 .

Before effects of the first embodiment are described, a resistance element and a capacitor in the peripheral region according to a reference example are described.

FIG. 8A is a schematic cross-sectional view showing a resistance element provided in the peripheral region of a nonvolatile semiconductor memory device according to the reference example, and FIG. 8B is a schematic cross-sectional view showing a capacitor provided in the peripheral region of the nonvolatile semiconductor memory device according to the reference example.

In the peripheral region 200 shown in FIG. 8A , the process of forming the space 21 sp described above is not experienced. Therefore, in the reference example, the conductive layers 61 and 62 do not wrap around to the lower surface 30 Bd of the semiconductor-containing layer 30 B, and the conductive layers 61 and 62 are in contact only with the side wall 30 Bw of the semiconductor-containing layer 30 B.

As described above, in the case where the semiconductor-containing layer 30 B is formed simultaneously with the floating gate layer 30 A in the memory cell region 100 , the thickness of the semiconductor-containing layer 30 B is 10 nm or less. Therefore, in the resistance element according to the reference example, the contact area between the conductive layer 61 and the semiconductor-containing layer 30 B and the contact area between the conductive layer 62 and the semiconductor-containing layer 30 B are very small. Thus, in the resistance element according to the reference example, there are limitations to reducing the contact resistance between the conductive layer 61 and the semiconductor-containing layer 30 B and the contact resistance between the conductive layer 62 and the semiconductor-containing layer 30 B.

Also in the peripheral region 200 shown in FIG. 8B , the process of forming the space 22 sp described above is not experienced. Furthermore, the thickness of the insulating film 22 is the same as the thickness of the insulating film 21 . Therefore, the conductive layer 63 does not wrap around to the lower surface 30 Cd of the semiconductor-containing layer 30 C, and the conductive layer 63 is in contact only with the side wall 30 Cw of the semiconductor-containing layer 30 C.

As described above, in the case where the semiconductor-containing layer 30 C is formed simultaneously with the floating gate layer 30 A in the memory cell region 100 , the thickness of the semiconductor-containing layer 30 C is 10 nm or less. Therefore, in the capacitor according to the reference example, the contact area between the conductive layer 63 and the semiconductor-containing layer 30 C is very small. Thus, in the capacitor according to the reference example, there are limitations to reducing the contact resistance between the conductive layer 63 and the semiconductor-containing layer 30 C.

On the other hand, since the thickness of the semiconductor-containing layer 30 C is 10 nm or less, the bottom of the contact hole for burying the conductive layer 63 may pierce the semiconductor-containing layer 30 C to the lower side. In such a case, the lower end 63 d of the conductive layer 63 is located on the lower side of the semiconductor-containing layer 30 C. Therefore, the lower end 63 d of the conductive layer 63 may come close to the semiconductor layer 10 to cause dielectric breakdown between the conductive layer 63 and the semiconductor layer 10 .

Thus, in the reference example, for example, RC delay is likely to occur due to the increase in the contact resistance mentioned above.

In contrast, in the peripheral region 200 according to the first embodiment, the process of forming the space 21 sp described above is experienced. Thus, the conductive layers 61 and 62 wrap around to the lower surface 30 Bd of the semiconductor-containing layer 30 B, and the conductive layers 61 and 62 are in contact not only with the side wall 30 Bw of the semiconductor-containing layer 30 B but also with the lower surface 30 Bd of the semiconductor-containing layer 30 B.

Therefore, in the resistance element according to the first embodiment, the contact area between the conductive layer 61 and the semiconductor-containing layer 30 B and the contact area between the conductive layer 62 and the semiconductor-containing layer 30 B are larger than those of the reference example. In the resistance element according to the first embodiment, the contact resistance between the conductive layer 61 and the semiconductor-containing layer 30 B and the contact resistance between the conductive layer 62 and the semiconductor-containing layer 30 B can be made lower than those of the reference example.

Furthermore, in the peripheral region 200 according to the first embodiment, the process of forming the space 22 sp described above is experienced. Thus, the conductive layer 63 wraps around to the lower surface 30 Cd of the semiconductor-containing layer 30 C, and the conductive layer 63 is in contact not only with the side wall 30 Cw of the semiconductor-containing layer 30 C but also with the lower surface 30 Cd of the semiconductor-containing layer 30 C.

Therefore, in the capacitor according to the first embodiment, the contact area between the conductive layer 63 and the semiconductor-containing layer 30 C is larger than that of the reference example. Thereby, in the capacitor according to the first embodiment, the contact resistance between the conductive layer 63 and the semiconductor-containing layer 30 C can be made lower than that of the reference example. In other words, in the first embodiment, for example, RC delay is suppressed by the reduction in the contact resistance mentioned above.

The thickness of the insulating film 22 is thicker than the thickness of the insulating film 21 . Therefore, even if the conductive layer 63 is buried in the space 22 sp , the thickness of the insulating film between the conductive layer 63 and the semiconductor layer 10 is thicker than that of the reference example because the insulating film 22 is formed thicker than the thickness of the insulating film 21 . Thereby, in the first embodiment, dielectric breakdown is less likely to occur between the conductive layer 63 and the semiconductor layer 10 .

Second Embodiment

The resistance element and the capacitor in the peripheral region 200 are not limited to the structures of the first embodiment.

FIG. 9A is a schematic cross-sectional view showing a resistance element provided in the peripheral region of a nonvolatile semiconductor memory device according to a second embodiment, and FIG. 9B is a schematic cross-sectional view showing a capacitor provided in the peripheral region of the nonvolatile semiconductor memory device according to the second embodiment.

As shown in FIG. 9A , the insulating film 21 is provided on the semiconductor layer 10 . The semiconductor-containing layer 30 B is provided on the insulating film 21 . The semiconductor-containing layer 30 B is a resistance element. The periphery of the semiconductor-containing layer 30 B is surrounded by the element isolation region 51 . The semiconductor-containing layer 30 B is insulated from the semiconductor layer 10 by the element isolation region 51 . The element isolation region 51 further surrounds the periphery of the insulating film 21 on the lower side of the semiconductor-containing layer 30 B. The insulating film 40 B is provided on the semiconductor-containing layer 30 B.

As shown in FIG. 9A , a pair of conductive layers 81 and 82 that extend from the surface of the insulating film 40 B to reach the insulating film 21 via the semiconductor-containing layer 30 B are provided. Each of the conductive layers 81 and 82 wraps around to the lower side of the semiconductor-containing layer 30 B, and is in contact with part of the lower surface 30 Bd of the semiconductor-containing layer 30 B. The conductive layers 81 and 82 and the insulating film 40 B are covered with the insulating layer 70 .

As shown in FIG. 9B , the insulating film 22 is provided on the semiconductor layer 10 . The semiconductor-containing layer 30 C is provided on the insulating film 22 . The periphery of the semiconductor-containing layer 30 C is surrounded by the element isolation region 52 . The element isolation region 52 surrounds the periphery of the insulating film 22 on the lower side of the semiconductor-containing layer 30 C.

The insulating film 40 C is provided on the semiconductor-containing layer 30 C. As shown in FIG. 9B , a conductive layer 83 extends from the surface of the insulating film 40 C to reach the insulating film 22 via the semiconductor-containing layer 30 C. The conductive layer 83 wraps around to the lower side of the semiconductor-containing layer 30 C, and is in contact with part of the lower surface 30 Cd of the semiconductor-containing layer 30 C. Conductive layers 65 and 84 are provided on the semiconductor-containing layer 30 C via the insulating film 40 C. The conductive layers 83 , 84 , and 65 and the insulating film 40 C are covered with the insulating layer 70 .

In the peripheral region 200 shown in FIG. 9B , the semiconductor-containing layer 30 C, the conductive layer 65 , and the insulating film 40 C sandwiched by the semiconductor-containing layer 30 C and the conductive layer 65 form a capacitor.

The thickness of the insulating film 22 may be still thicker than the thickness of the insulating film 21 . FIG. 9B illustrates this state as an example. As described above, when using the capacitor mentioned above, there is a case where a voltage higher than the voltage applied between the conductive layer 81 and the semiconductor layer 10 or between the conductive layer 82 and the semiconductor layer 10 is applied between the conductive layer 65 and the semiconductor layer 10 or between the conductive layer 83 and the semiconductor layer 10 . In such a case, sufficient insulation is maintained between each of the conductive layers 65 and 82 and the semiconductor layer 10 by setting the thickness of the insulating film 22 thicker than the thickness of the insulating film 21 .

FIG. 10A to FIG. 11B are schematic cross-sectional views showing the manufacturing process of forming a resistance element in the peripheral region according to the second embodiment.

First, as shown in FIG. 10A , after the semiconductor layer 10 , the insulating film 21 , and the semiconductor-containing layer 30 B surrounded by the element isolation region 51 are formed beforehand, the insulating film 40 B is formed on the element isolation region 51 and on the semiconductor-containing layer 30 B, and the conductive layer 68 is formed on the insulating film 40 B. The structure in which the semiconductor layer 10 , the insulating film 21 , the semiconductor-containing layer 30 B, the insulating film 40 B, and the conductive layer 68 are stacked in this order is referred to as a stacked body 17 A.

The thickness of the insulating film 21 may be formed thicker than the thickness of the tunnel insulating film 20 .

Next, as shown in FIG. 10B , photolithography and RIE processing are performed on the stacked body 17 A to such a degree that the width of the conductive layer 68 and the width of the insulating film 40 B are almost the same as the width of the semiconductor-containing layer 30 B.

Next, as shown in FIG. 10C , the conductive layer 68 is removed from the stacked body 17 A, and the insulating layer 70 that covers the element isolation region 51 and the insulating film 40 B is formed. The structure in which the semiconductor layer 10 , the insulating film 21 , the semiconductor-containing layer 30 B, the insulating film 40 B, and the insulating layer 70 are stacked in this order is referred to as a stacked body 17 B.

Next, as shown in FIG. 11A , photolithography and RIE processing are performed on the stacked body 17 B to form a pair of contact holes 17 h extending from the surface of the insulating layer 70 to the insulating film 21 .

Next, as shown in FIG. 11B , a wet etching solution is introduced into the pair of contact holes 17 h to perform isotropic etching on the surface of the insulating film 21 exposed at the contact holes 17 h . Here, as the etching solution, a solution whereby the etching rate of the insulating film 21 is higher than the etching rate of the semiconductor-containing layer 30 B and the insulating film 40 B is selected. For example, a dilute hydrofluoric acid solution is used as the solution.

By the wet etching, the surface of the insulating film 21 exposed at the contact hole 17 h is selectively removed, and a space 21 sp leading to the contact hole 17 h is formed on the lower side of the semiconductor-containing layer 30 B. The space 21 sp has a wider width than the contact hole 15 h . In the space 21 sp , part of the lower surface 30 Bd of the semiconductor-containing layer 30 B is exposed.

After that, as shown in FIG. 9A , the conductive layers 81 and 82 are formed in the contact holes 17 h and in the spaces 21 sp . The formation of the conductive layers 81 and 82 is performed by CVD with good step coatability. The component of the conductive layers 81 and 82 is tungsten, for example.

FIG. 12A to FIG. 13C are schematic cross-sectional views showing the manufacturing process of forming a capacitor in the peripheral region according to the second embodiment.

First, as shown in FIG. 12A , the insulating film 22 is formed on the semiconductor layer 10 . The thickness of the insulating film 22 may be formed thicker than the thickness of the insulating film 21 .

Next, as shown in FIG. 12B , the semiconductor-containing layer 30 C is formed on the insulating film 22 . Subsequently, the element isolation region 52 that surrounds the semiconductor-containing layer 30 C is formed, the insulating film 40 C is formed on the element isolation region 52 and on the semiconductor-containing layer 30 C, and the conductive layer 65 is formed on the insulating film 40 C. The structure in which the semiconductor layer 10 , the insulating film 22 , the semiconductor-containing layer 30 C, the insulating film 40 C, and the conductive layer 65 are stacked in this order is referred to as a stacked body 18 A.

Next, as shown in FIG. 12C , photolithography and RIE processing are performed on the stacked body 18 A to perform processing to such a degree that the width of the conductive layer 65 and the width of the insulating film 40 C are almost the same as the width of the semiconductor-containing layer 30 C.

Next, as shown in FIG. 13A , photolithography and RIE processing are performed to reduce the width of the conductive layer 65 to expose part of the insulating film 40 C from the conductive layer 65 . Further, the insulating layer 70 that covers the element isolation region 52 , the insulating film 40 C, and the conductive layer 65 is formed. The structure in which the semiconductor layer 10 , the insulating film 22 , the semiconductor-containing layer 30 C, the insulating film 40 C, the conductive layer 65 , and the insulating layer 70 are stacked in this order is referred to as a stacked body 18 B.

Next, as shown in FIG. 13B , photolithography and RIE processing are performed on the stacked body 18 B to form a contact hole 18 ha extending from the surface of the insulating layer 70 to the insulating film 22 and a contact hole 18 hb reaching the conductive layer 65 . Here, the contact hole 18 hb is shallower than the contact hole 18 ha . Thus, the contact hole 18 hb reaches the conductive layer 65 earlier than the contact hole 18 ha reaches the insulating film 22 .

Here, as the etching gas, a gas whereby the etching rate of the conductive layer 65 is higher than the etching rate of the semiconductor-containing layer 30 B and the insulating film 40 B is selected. Therefore, even if the contact hole 18 hb reaches the conductive layer 65 earlier, the conductive layer 65 is not etched thereafter and the contact hole 18 ha reaches the insulating film 22 .

Next, as shown in FIG. 13C , a wet etching solution is introduced into the contact hole 18 ha to perform isotropic etching on the surface of the insulating film 22 exposed at the contact hole 18 ha . Here, a dilute hydrofluoric acid solution is used as the etching solution.

By the wet etching, the surface of the insulating film 22 exposed at the contact hole 18 ha is selectively removed, and a space 22 sp leading to the contact hole 18 ha is formed on the lower side of the semiconductor-containing layer 30 C. The space 22 sp has a wider width than the contact hole 18 ha . In the space 22 sp , part of the lower surface 30 Cd of the semiconductor-containing layer 30 C is exposed.

After that, as shown in FIG. 9B , the conductive layers 83 and 84 are formed in the contact holes 18 ha and 18 hb , respectively. The formation of the conductive layers 83 and 84 is performed by CVD. The component of the conductive layers 83 and 84 is tungsten, for example.

Also in the second embodiment, the conductive layers 81 and 82 wrap around to the lower surface 30 Bd of the semiconductor-containing layer 30 B, and the conductive layers 81 and 82 are in contact not only with the side wall 30 Bw of the semiconductor-containing layer 30 B but also with the lower surface 30 Bd of the semiconductor-containing layer 30 B.

Therefore, in the resistance element according to the second embodiment, the contact area between the conductive layer 81 and the semiconductor-containing layer 30 B and the contact area between the conductive layer 82 and the semiconductor-containing layer 30 B are larger than those of the reference example. In the resistance element according to the second embodiment, the contact resistance between the conductive layer 81 and the semiconductor-containing layer 30 B and the contact resistance between the conductive layer 82 and the semiconductor-containing layer 30 B can be made lower than those of the reference example.

Furthermore, the conductive layer 83 wraps around to the lower surface 30 Cd of the semiconductor-containing layer 30 C, and the conductive layer 83 is in contact not only with the side wall 30 Cw of the semiconductor-containing layer 30 C but also with the lower surface 30 Cd of the semiconductor-containing layer 30 C.

Therefore, in the capacitor according to the second embodiment, the contact area between the conductive layer 83 and the semiconductor-containing layer 30 C is larger than that of the reference example. Thereby, in the capacitor according to the second embodiment, the contact resistance between the conductive layer 83 and the semiconductor-containing layer 30 C can be made lower than that of the reference example. In other words, in the second embodiment, for example, RC delay is suppressed by the reduction in the contact resistance mentioned above.

The thickness of the insulating film 22 is thicker than the thickness of the insulating film 21 . Therefore, even if the conductive layer 83 is buried in the space 22 sp , the thickness of the insulating film between the conductive layer 83 and the semiconductor layer 10 is thicker than that of the reference example because the insulation film 22 is formed thicker than the thickness of the insulating film 21 . Thereby, in the second embodiment, dielectric breakdown is less likely to occur between the conductive layer 83 and the semiconductor layer 10 .

The embodiments have been described above with reference to examples. However, the embodiments are not limited to these examples. More specifically, these examples can be appropriately modified in design by those skilled in the art. Such modifications are also encompassed within the scope of the embodiments as long as they include the features of the embodiments. The components included in the above examples and the layout, material, condition, shape, size and the like thereof are not limited to those illustrated, but can be appropriately modified.

Furthermore, the components included in the above embodiments can be combined as long as technically feasible. Such combinations are also encompassed within the scope of the embodiments as long as they include the features of the embodiments. In addition, those skilled in the art could conceive various modifications and variations within the spirit of the embodiments. It is understood that such modifications and variations are also encompassed within the scope of the embodiments.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.