Optical inspection system and optical inspection method

MEMS (Micro Electro Mechanical Systems) devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. Because of the size of MEMS devices, the MEMS devices are usually inspected for defects by some specific microscopes, such as scanning electron microscopes (SEM), or atomic force microscopes (AFM). However, the SEM or the AFM inspect the MEMS devices by emitting electrons or atoms, and that will damage the MEMS devices.

Optical microscopes may be usually used for inspecting MEMS devices to prevent damage. However, the optical microscopes for MEMS devices have very complex and precise mechanisms, and therefore, the manufacturing of the optical microscopes is very difficult, and the manufacturing cost of the optical microscopes is very expensive. Moreover, the inspection processes of the microscopes are very complex and take a lot of time.

Therefore, there are challenges to the manufacturing of optical microscopes and improving the inspection methods of the optical microscopes.

For a more complete understanding of the present disclosure, and the advantages of the present disclosure, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:

FIGS. 1 and 2 are schematic views of optical inspection systems in accordance with some embodiments of the disclosure.

FIG. 3A is a top view of an object and a substrate in accordance with some embodiments of the disclosure.

FIG. 3B is a cross-sectional view of the object and the substrate along line AA of FIG. 3A .

FIGS. 4A and 4B are flow charts of an optical inspection method in accordance with some embodiments of the disclosure.

FIG. 5 is an image frame in accordance with some embodiments of the disclosure.

FIG. 6A is a top view of an interference pattern in accordance with some embodiments of the disclosure.

FIG. 6B is a curve diagram corresponding to the interference pattern in FIG. 6A .

FIG. 7A is a top view of an interference pattern in accordance with some embodiments of the disclosure.

FIG. 7B is a curve diagram corresponding to the interference pattern in FIG. 7A .

FIG. 8A is a top view of an interference pattern in accordance with some embodiments of the disclosure.

FIG. 8B is a curve diagram corresponding to the interference pattern in FIG. 8A .

FIG. 9A is a top view of an interference pattern in accordance with some embodiments of the disclosure.

FIG. 9B is a cross-sectional view of an object and a substrate corresponding to the interference pattern in FIG. 9A .

FIG. 10A is a top view of an interference pattern in accordance with some embodiments of the disclosure.

FIG. 10B is a cross-sectional view of an object and a substrate corresponding to the interference pattern in FIG. 10A .

FIG. 11A is a cross-sectional view of an object in accordance with some embodiments of the disclosure.

FIG. 11B is a top view of the object in accordance with some embodiments of the disclosure.

FIG. 11C illustrates interference patterns corresponding to the object in accordance with some embodiments of the disclosure.

It is to be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. Moreover, the performance of a first process before a second process in the description that follows may include embodiments in which the second process is performed immediately after the first process, and may also include embodiments in which additional processes may be performed between the first and second processes. Various features may be arbitrarily drawn in different scales for the sake of simplicity and clarity. Furthermore, the formation of a first feature over or on a second feature in the description may include embodiments in which the first and second features are formed in direct or indirect contact.

FIG. 1 is a schematic view of an optical inspection system 1 in accordance with some embodiments of the disclosure. Optical inspection system 1 for inspecting an object A 1 includes a light source 10 , a beam expander 20 , a polaroid module 30 , a half-reflect mirror 40 , an image module 50 , and a computer 60 . In some embodiments, light source 10 , beam expander 20 , polaroid module 30 , and half-reflect mirror 40 are arranged along a first axis AX 1 , and object A 1 , half-reflect mirror 40 , and image module 50 are arranged along a second axis AX 2 in sequence. First axis AX 1 is perpendicular to second axis AX 2 .

The arrangement of light source 10 , beam expander 20 , polaroid module 30 , half-reflect mirror 40 , image module 50 , and computer 60 varies. In some embodiments, light source 10 , beam expander 20 , polaroid module 30 , half-reflect mirror 40 , and object A 1 are arranged along first axis AX 1 (or second axis AX 2 ), and half-reflect mirror 40 , and image module 50 are arranged along second axis AX 2 (or first axis AX 1 ) in sequence.

As shown in FIG. 1 , light source 10 emits a light beam (coherent beam L 1 , polarized coherent beam L 2 , and inspection beam L 3 ) which is transmitted to beam expander 20 , polaroid module 30 , half-reflect mirror 40 , and object A 1 , and reflected by object A 1 . Next, after object A 1 reflects the light beam, the reflected light beam is transmitted to half-reflect mirror 40 and image module 50 , and captured by image module 50 . In some embodiments, polarized coherent beam L 2 emitted to object A 1 and inspection beam L 3 reflected by object A 1 are transmitted along the same axis (second axis AX 2 ).

In some embodiments, light source 10 is a coherent light source, such as a laser emitting device or coherent filtered light in same wavelength by photomultiplier amplifying. The laser emitting device may be a gas laser emitting device, a liquid laser emitting device, a solid state laser emitting device, or a semiconductor laser emitting device.

For example, light source 10 is a laser emitting device emitting a coherent beam L 1 , such as a laser beam along a first direction D 1 and first axis AX 1 , and first direction D 1 is parallel to first axis AX 1 . In some embodiments, coherent beam L 1 has a single wavelength in a range from about 380 nm to about 700 nm, such as a monochromatic light. The energy of coherent beam L 1 is in a range from about 3 mw to about 10 mw. For example, the wavelength of coherent beam L 1 is about 532 nm, and the energy of coherent beam L 1 is about 5 mw.

The beam expander 20 increases width W 1 of coherent beam L 1 to width W 2 , which is greater than width W 1 . Width W 2 is substantially the same as or approaches to width W 3 of object A 1 . In some embodiments, width W 1 of coherent beam L 1 is in a range from about 0.05 mm to about 0.2 mm. In some embodiments, width W 2 of coherent beam L 1 is in a range from about 0.4 mm to about 1 mm. In some embodiments, and width W 3 of object A 1 is in a range from about 0.4 mm to about 1 mm. For example, width W 1 is about 0.1 mm, width W 2 is about 0.5 mm, and width W 3 is about 0.6 mm.

Beam expander 20 includes a first lens 21 and a second lens 22 arranged along first axis AX 1 in sequence. First lens 21 is adjacent to light source 10 , and second lens 22 is adjacent to polaroid module 30 . First lens 21 is a symmetrical double convex lens, and second lens 22 is a symmetrical biconcave lens. The refractive index of first and second lenses 21 and 22 are in a range about 1.33 to 2.0. The first and second lenses 21 and 22 are made of glass.

Coherent beam L 1 between first lens 21 and light source 10 is collimated light with constant width W 1 . After coherent beam L 1 passes through first lens 21 , the width of coherent beam L 1 is gradually greater between first lens 21 and second lens 22 . Further, after coherent beam L 1 passes through second lens 22 , coherent beam L 1 has a constant width W 2 . Therefore, optical inspection system 1 adapts to the variety of sizes of object A 1 by adjusting and modifying the lenses of beam expander 20 .

In some embodiments, first lens 21 has a focal length in a range less than 20 cm, and a radius of curvature in a range less than 2 cm. In some embodiments, second lens 22 has a focal length in a range large than −20 cm, and a radius of curvature in a range large than 2 cm. In some embodiments, a distance E 1 between light source 10 and first lens 21 equal to focal length of lens 21 . In some embodiments, a distance E 2 between first lens 21 and second lens 22 equal to absolute value of focal length of lens 22 . For example, the first lens 21 has a focal length about 15 cm, and a radius of curvature about 1.32 cm. Second lens 22 has a focal length about −10 cm, and a radius of curvature about −0.82 cm. A distance E 1 between light source 10 and first lens 21 is about 15 cm. A distance E 2 between first lens 21 and second lens 22 is about 10 cm.

Polaroid module 30 is adjacent to beam expander 20 , and transforms coherent beam L 1 to a polarized coherent beam L 2 transmitted along first direction D 1 and first axis AX 1 . Polarized coherent beam L 2 has a constant width, and the width of polarized coherent beam L 2 is the same as width W 2 of coherent beam L 1 . Further, polarized coherent beam L 2 is polarized light, such as S-wave polarized light or S-wave polarized light, and collimated light. Polaroid module 30 includes a polaroid 31 , such as a linear polaroid or a circular polaroid.

Half-reflect mirror 40 reflects polarized coherent beam L 2 to object A 1 . Half-reflect mirror 40 is inclined about 45 degrees relative to first axis AX 1 and second axis AX 2 . Therefore, polarized coherent beam L 2 is transmitted along second axis AX 2 , which is perpendicular to first axis AX 1 , after being reflected by half-reflect mirror 40 .

After polarized coherent beam L 2 is emitted to object A 1 , object A 1 generates an inspection beam L 3 with an interference pattern by reflecting polarized coherent beam L 2 . Inspection beam L 3 has a constant width, and the width of inspection beam L 3 is the same as width W 2 of coherent beam L 1 . Further, inspection beam L 3 is transmitted along a second direction D 2 and second axis AX 2 , and second direction D 2 is parallel to second axis AX 2 . Further, inspection beam L 3 passes through half-reflect mirror 40 to image module 50 along second direction D 2 and second axis AX 2 .

Image module 50 includes a microscope 51 and a camera 52 . Microscope 51 includes a microscope mechanism 511 , a rotating element 512 , and several lens elements 513 . Rotating element 512 is pivoted on microscope mechanism 511 , and lens elements 513 are fixed on rotating element 512 . Each of lens elements 513 corresponds to the different widths of the objects, and one of lens elements 513 is aligned to inspection beam L 3 and second axis AX 2 by rotating the rotating element 512 .

Camera 52 is disposed on microscope 51 . Camera 52 may be a charge-coupled device. Computer 60 includes a processes module 61 and a display 62 electrically connected with processes module 61 . Processes module 61 is communicated with camera 52 by wire or wireless network.

Inspection beam L 3 passes through lens elements 513 and microscope mechanism 511 to camera 52 and is captured by camera 52 . After camera 52 captures inspection beam L 3 , camera 52 generates an image signal according to the interference pattern of inspection beam L 3 to processes module 61 . Processes module 61 generates an inspection signal to display 62 according to image signal, and display 62 displays an inspection image according to the inspection signal.

FIG. 2 is a schematic view of an optical inspection system in accordance with some embodiments of the disclosure. FIG. 2 is similar to FIG. 1 , except that beam expander 20 further includes a third lens 23 and a fourth lens 24 . As shown in FIG. 2 , third lens 23 and fourth lens 24 are between first lens 21 and second lens 22 , and first lens 21 , third lens 23 , fourth lens 24 , and second lens 22 are arranged along first axis AX 1 in sequence.

First lens 21 , third lens 23 , and fourth lens 24 are symmetrical double convex lenses. In some embodiments, as shown in FIG. 2 , first lens 21 has a focal length in a range less than 10 cm, and a radius of curvature in a range less than 1.3 cm. In some embodiments, second lens 22 has a focal length in a range larger than −10 cm, and a radius of curvature in a range larger than −1.3 cm. In some embodiments, third lens 23 has a focal length in a range less than 10 cm, and a radius of curvature in a range less than 1.3 cm. In some embodiments, fourth lens 24 has a focal length in a range less than 20 cm, and a radius of curvature in a range less than 2 cm. For example, first lens 21 has a focal length about 3.5 cm, and a radius of curvature about 0.48 cm. Second lens 22 has a focal length about −10 cm, and a radius of curvature about −0.82 cm. Third lens 23 has a focal length about 4 cm, and a radius of curvature about 0.63 cm. Fourth lens 24 has a focal length about 15 cm, and a radius of curvature about 1.32 cm.

In some embodiments, a distance E 3 between light source 10 and first lens 21 equal to focal length of first lens 21 . In some embodiments, a distance E 4 between first lens 21 and third lens 23 equal to focal length of third lens 23 . In some embodiments, a distance E 5 between third lens 23 and fourth lens 24 equal to focal length of lens 24 , a distance E 6 between fourth lens 24 and second lens 22 equal to absolute value of focal length of second lens 22 . For, example, a distance E 3 between light source 10 and first lens 21 is about 3.5 cm. A distance E 4 between first lens 21 and third lens 23 is about 4 cm. A distance E 5 between third lens 23 and fourth lens 24 is about 15 cm. A distance E 6 between fourth lens 24 and second lens 22 is about 10 cm.

In addition, polaroid module 30 includes a first polaroid 31 and a second polaroid 32 arranged along a first axis AX 1 in sequence and parallel to each other. In some embodiments, the structure of first polaroid 31 and second polaroid 32 are the same. Therefore, by first polaroid 31 and second polaroid 32 , the polarization of polarized coherent beam L 2 is improved.

As shown in FIGS. 1 and 2 , the optical inspection system 1 of the present disclosure has a simplification structure, and therefore, the difficulty of the manufacturing and the manufacturing cost of the optical inspection system 1 are decreased.

FIG. 3A is a top view of object A 1 and substrate A 2 in accordance with some embodiments of the disclosure. FIG. 3B is a cross-sectional view of object A 1 and substrate A 2 along line AA of FIG. 3A . Objects A 1 are arranged on substrate A 2 in array. Object A 1 may be an MEMS (Micro Electro Mechanical Systems) element, and substrate A 2 may be a wafer. In some embodiments, object A 1 is a microphone including a support element A 11 and a membrane A 12 with a curved surface A 13 . Optical inspection system 1 inspects objects A 1 in sequence.

FIGS. 4A and 4B are flow charts of an optical inspection method in accordance with some embodiments of the disclosure. FIG. 5 is an image frame F 1 in accordance with some embodiments of the disclosure. First, light source 10 emits coherent beam L 1 (step S 101 ). Next, width of coherent beam L 1 is increased by coherent beam L 1 passing through beam expander 20 (step S 103 ), and coherent beam L 1 is polarized by passing through polaroid module 30 (step S 105 ). Polarized coherent beam L 2 is reflected to object A 1 by half-reflect mirror 40 .

Polarized coherent beam L 2 is reflected by object A 1 to generate inspection beam L 3 with an interference pattern (step S 107 ). Next, inspection beam L 3 passes through half-reflect mirror 40 to image module 50 , and is captured by image module 50 (step S 109 ). Repeating steps S 101 to S 109 , optical inspection system 1 inspects each of objects A 1 on substrate A 2 .

In some embodiments, polarized coherent beam L 2 is emitted to object A 1 by passing through half-reflect mirror 40 , and inspection beam L 3 is reflected to image module 50 by half-reflect mirror 40 .

Further, image module 50 generates an image signal of each of objects A 1 to processes module 61 , and processes module 61 generates an inspection signal according to the image signal. Display 62 displays an image frame F 1 according to the inspection signal. Image frame F 1 includes inspection images F 11 arranged thereon in array. Each of inspection images F 11 has one interference pattern I 1 corresponds one curved surface A 13 of object A 1 as shown in FIG. 3A (step 201 ).

Next, whether interference pattern I 1 has concentric circles C 1 is detected (step S 203 ). If interference pattern I 1 excludes concentric circles C 1 , inspection image F 11 is marked as a defect image, and object A 1 corresponding to inspection image F 11 is classified as a defect object (step S 205 ). As shown in FIG. 5 , for example, interference patterns I 1 include interference patterns I 11 , I 12 , I 13 , I 14 , I 15 and I 16 in varied types. Interference pattern I 12 has a mass area B 1 and curves C 2 . Therefore, interference pattern I 12 excludes concentric circles C 1 , and object A 1 corresponding to interference pattern I 12 is classified as a defect object.

Further, whether a distance between two adjacent concentric circles C 1 is within a predetermined range is detected (step S 207 ). If the distance greater than the predetermined range, inspection image F 11 in FIG. 5 is also marked as a defect inspection image, and object A 1 corresponding to inspection image F 11 is classified as a defect object (step S 205 ). Further, if the distance is within the predetermined range, inspection image F 11 is marked as a qualified image, and object A 1 corresponding to inspection image F 11 is classified as a qualified object (step S 209 ).

For example, a distance between two adjacent concentric circles C 1 of interference pattern I 13 in FIG. 5 exceeds the predetermined range, and object A 1 corresponding to interference pattern I 13 is classified as a defect object. If a distance between two adjacent concentric circles C 1 of interference pattern I 11 is within the predetermined range, then object A 1 corresponding to interference pattern I 11 is classified as a qualified object.

As shown in FIG. 5 , for example, interference patterns I 12 , I 13 , I 14 , I 15 and I 16 are defect interference patterns, which is significant difference from a qualified interference pattern I 11 . Therefore, the determination of an object A 1 whether having defect is easier.

FIG. 6A is a top view of an interference pattern I 11 in accordance with some embodiments of the disclosure. FIG. 6B is a curve diagram corresponding to interference pattern I 11 in FIG. 6A . As shown in FIGS. 6A and 6B , for example, interference pattern 111 has concentric circles C 11 , C 12 , C 13 , C 14 , C 15 , and C 16 . For example, a first distance d 1 between concentric circles C 11 and C 12 is about 80 um, a second distance d 2 between concentric circles C 12 and C 13 is about 30 um, and a third distance d 3 between concentric circles C 13 and C 14 is about 15 um.

In addition, a first predetermined range corresponding to first distance d 1 is in a range of from about 78 nm to about 82 nm, a second predetermined range corresponding to second distance d 2 is in a range of from about 28 nm to about 32 nm, and a third predetermined range corresponding to third distance d 3 is in a range of from about 13 nm to about 17 nm. Since first, second and third distances d 1 , d 2 , and d 3 are respectively within the first, second and third predetermined ranges, interference pattern I 11 is marked as a qualified interference pattern, and object A 1 corresponding to interference pattern I 11 is classified as a qualified object.

A topography structure of curved surface A 13 of object A 1 is restructured according to the curve diagram of FIG. 6B . Point P 1 is a center of concentric circles C 11 , and a point P 1 having a coordinate (X, Y) is positioned at a proper position in the curve diagram.

In FIG. 6B , the coordinate of point P 1 is about (170, 10). Point P 2 has a coordinate (X+X1, Y+Y1), and the X1 is the value of first distance d 1 , and the Y1 is a value of the wavelength of the light beam emitted by light source 10 . Point P 3 has a coordinate (X+X1+X2, Y+2*Y1), and the X2 is the value of second distance d 2 . Point P 4 has a coordinate (X+X1+X2+X3, Y+3*Y1), and the X3 is the value of third distance d 3 .

Therefore, a curved line CV is drawn in the curve diagram of FIG. 6B according to points P 1 , P 2 , P 3 , P 4 , and P 5 . Curved line CV corresponds to the topography structure of curved surface A 13 of object A 1 as shown in FIG. 3B . Namely, the topography structure of curved surface A 13 of object A 1 is restructured, and the quality of object A 1 may be easily determined according to curved line CV.

In some embodiments, as shown in FIGS. 7A and 7B , interference pattern I 13 has three concentric circles C 11 , C 12 , and C 13 . First distance d 1 between concentric circles C 11 and C 12 is about 100 um, which exceeds the first predetermined range. Second distance d 2 between concentric circles C 12 and C 13 is about 50 um, which exceeds the second predetermined range. Therefore, interference pattern I 13 is marked as a defect interference pattern, and the object A 1 corresponding to interference pattern I 13 is classified as a defect object.

Further, since interference pattern I 13 has less concentric circles C 1 than qualified interference pattern I 11 , curved line CV of interference pattern I 13 is flatter than curved line CV of interference pattern I 11 . Therefore, the quality of interference pattern I 1 is easily determined by the number of concentric circles C 1 of the interference pattern I 1 . For example, if the number of concentric circles C 1 is not equal to or less than the predetermined number, such as 5, inspection image F 11 corresponding to interference pattern I 13 is classified as a defect image, and object A 1 corresponding to interference pattern I 13 is classified as a defect object.

In addition, if the number of concentric circles C 1 is equal to a predetermined number, inspection image F 11 corresponding to interference pattern I 11 as shown in FIG. 6A may be classified as a qualified image, and object A 1 corresponding to interference pattern I 11 may be classified as a qualified object.

FIG. 8A is a top view of an interference pattern I 14 in accordance with some embodiments of the disclosure. FIG. 8B is a curve diagram corresponding to interference pattern I 14 in FIG. 8A . In some embodiments, interference pattern I 14 has more concentric circles C 1 than qualified interference pattern I 11 , and curved line CV of interference pattern I 14 is more curved than curved line CV of interference pattern I 11 . Since the number of concentric circles C 1 is not equal to or greater than the predetermined number, inspection image F 11 corresponding to interference pattern I 14 is classified as a defect image, and object A 1 corresponding to interference pattern I 14 is classified as a defect object.

FIG. 9A is a top view of an interference pattern I 15 in accordance with some embodiments of the disclosure. FIG. 9B is a cross-sectional view of object A 1 and substrate A 2 corresponding to interference pattern I 15 in FIG. 9A . In some embodiments, interference pattern I 15 has rings C 3 with at least one flat segment C 31 , and one side of surface A 13 is more inclined than the other side. Therefore, inspection image F 11 corresponding to interference pattern I 15 is classified as a defect image, and object A 1 corresponding to interference pattern I 15 is classified as a defect object.

FIG. 10A is a top view of an interference pattern I 16 in accordance with some embodiments of the disclosure. FIG. 10B is a cross-sectional view of object A 1 and substrate A 2 corresponding to interference pattern I 16 in FIG. 10A . In some embodiments, interference pattern I 16 has a mass area and uncompleted concentric circles C 2 . Here, a particle K 1 may have fallen down on surface A 2 . Therefore, inspection image F 11 corresponding to interference pattern I 16 is classified as a defect image, and object A 1 corresponding to interference pattern I 16 is classified as a defect object.

In some embodiments, the optical inspection system 1 and optical inspection method is applied to variety of objects with a variety surfaces. FIG. 11A is a cross-sectional view of an object A 3 in accordance with some embodiments. FIG. 11B is a top view of object A 3 in accordance with some embodiments. FIG. 11C illustrates interference patterns 12 and 13 corresponding to object A 3 in accordance with some embodiments. Object A 3 has rectangle grooves A 31 and grooves A 32 . Interference pattern 12 corresponding to groove A 31 is rectangle.

Rectangle grooves A 31 has a bottom portion A 321 and a top portion A 322 . Bottom portion A 321 is a cuboid with a rectangle bottom surface A 3211 and a rectangle opening A 3212 . Top portion A 322 has a rectangle opening A 3221 and an inclined surface A 3222 connected with rectangle opening A 3212 and A 3221 . Interference pattern 13 corresponding to interference pattern 12 has concentric rectangle T 1 .

Embodiments of mechanisms for an optical inspection system are provided. The optical inspection system has a simplification structure, and therefore, the difficulty of the manufacturing and the manufacturing cost of the optical inspection system are decreased. An interference pattern of an object is obtained quickly and easily by the optical inspection system. If the object has defect, the interference pattern of the object is significant difference from a qualified interference pattern. Therefore, the determination of the object whether having defect is easier.

In some embodiments, an optical inspection system for inspecting an object is provided. The optical inspection system includes a light source emitting a coherent beam having a first width, and a beam expander increasing the first width to a second width. The optical inspection system also includes a polaroid module adjacent to the beam expander and polarizing the coherent beam. The object generates an inspection beam with an interference pattern by reflecting the polarized coherent beam. The optical inspection system further includes an image module capturing the inspection beam.

In some embodiments, an optical inspection method is provided. The optical inspection method includes emitting a coherent beam from a light source. The method further includes increasing a width of the coherent beam by a beam expander. The method further includes polarizing the coherent beam by a polaroid module. The method further includes reflecting the polarized coherent beam by the object to generate an inspection beam with an interference pattern. The method further includes capturing the inspection beam by an image module.

In some embodiments, an optical inspection method is provided. The optical inspection method includes emitting a polarized coherent beam to an object, and generating an inspection beam with an interference pattern according to a surface of an object. The object generates the inspection beam by reflecting the polarized coherent beam. The method further includes capturing the inspection beam. The method further includes providing an inspection image with the interference pattern. The method further includes detecting the inspection image. The method further includes classifying the object as a defect object when the inspection image corresponding to the object excludes a plurality of concentric circles or includes the concentric circles having a distance between two adjacent concentric circles which exceed a predetermined range.

Although embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, it will be readily understood by those skilled in the art that many of the features, functions, processes, and materials described herein may be varied while remaining within the scope of the present disclosure. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.