SIP semiconductor system

The present application claims priority under 35 U.S.C. §119(a) to Korean application number 10-2011-0015176 filed on Feb. 21, 2011 and Korean application number 10-2011-0060826, filed on Jun. 22, 2011 in the Korean Intellectual Property Office, which is incorporated by reference in its entirety.

1. Technical Field

The present invention relates to a semiconductor system, and more particularly, to a system in package (SIP) semiconductor system in which a memory device and a controller are in one package.

2. Related Art

As semiconductor devices are integrated, a system in package (SIP) technology is used, in which a memory device and a controller are configured in one package.

A SIP semiconductor system configured using the SIP technology can have superior characteristics in terms of noise and operation stability compared to a semiconductor device configured using a heterogeneous package technology.

In the SIP semiconductor system configured using the SIP technology, all input/output terminals accessing a memory device from the outside of a package are generally connected to a controller in the package, and hence there exists no terminal capable of directly accessing the memory device from the outside of the package. Therefore, the SIP semiconductor system cannot perform a probe test and repair operation performed in the semiconductor device using the heterogeneous package technology.

In order to solve such a problem, the SIP semiconductor system performs a test of an internal memory device through an internal controller, and a design for test (DFT) such as a memory built-in self test (MBIST) or scan test is used to perform the test.

In order to repair the memory device of the SIP semiconductor system based on a test result obtained through the DFT, a redundancy analysis (RA) is required to allow optimal repair to be performed by analyzing the test result. The RA has a relatively complicated configuration, and the area and cost of the package or memory device is increased by implementing the configuration as an internal logic circuit.

A SIP semiconductor system capable of testing an internal memory device using less area and cost is described.

In one embodiment of the present invention, a SIP semiconductor system includes a memory device, a controller configured to communicate with the memory device, a first input/output terminal configured to perform communication between the controller and a device external to the SIP semiconductor system, a test control unit configured to control a predetermined test mode of the memory device, and a second input/output terminal configured to perform communication between the test control unit and at least the device external to the SIP semiconductor system.

In another embodiment of the present invention, a SIP semiconductor system includes a memory device configured to include electrical fuses for restoring a defective storage element, a test control unit configured to control a predetermined test mode of the memory device, and an input/output terminal configured to perform communication between the test control unit and a device external to the SIP semiconductor system. In the SIP semiconductor system the test control unit may use an IEEE standard interface, store a code with a plurality of bits in an internal register according to an input signal received through the input/output terminal, and store a test result received from the memory device in the internal register. The memory device may perform the predetermined test mode according to values stored in the internal register.

In still another embodiment of the present invention, a SIP semiconductor system includes a test access port, a register configured to be connected to the test access port, and output a rupture start signal and a rupture object fuse information signal during a repair operation, and a fuse unit configured to rupture a fuse corresponding to the rupture object fuse information signal in response to the rupture start signal and the rupture object fuse information signal.

Features, aspects, and embodiments are described in conjunction with the attached drawings:

FIG. 1 is an exemplary block diagram of a SIP semiconductor system according to one embodiment of the invention;

FIG. 2 is a detailed block diagram of an exemplary test control unit illustrated in FIG. 1 ; and

FIG. 3 illustrates one exemplary embodiment of a predetermined test mode operation based on settings of an internal register illustrated in FIG. 2 .

A SIP semiconductor system according to the present invention will be described below with reference to the accompanying drawings through exemplary embodiments.

The SIP semiconductor system according to an embodiment of the present invention includes an input/output terminal for directly testing a memory device of the SIP semiconductor system so that it may be possible to test and repair the memory device of the SIP semiconductor system.

Furthermore, in the SIP semiconductor system according to an embodiment of the present invention, the input/output terminal is configured according to the IEEE 1149.1 Standard so that it is possible to facilitate implementing a test operation of the SIP semiconductor system and loading test equipment of the SIP semiconductor system.

FIG. 1 is an exemplary block diagram of a SIP semiconductor system according to one embodiment of the invention.

As illustrated in FIG. 1 , the SIP semiconductor system can be configured to include a memory device 100 , a controller 200 , a first input/output terminal 300 , a test control unit 400 , and a second input/output terminal 500 .

The memory device 100 includes a plurality of storage elements for storing data. The configuration of the memory device 100 is not particularly limited. As an example, the memory device 100 can be configured to include a single memory chip or can be configured to include a plurality of memory chips stacked using through silicon via (TSV). As another example, the memory device 100 can be configured as a volatile memory device such as a DRAM or can be configured as a non-volatile memory device such as a flash memory.

The controller 200 controls the memory device 100 . The controller 200 can be configured to include a processor such as a general central processing unit (CPU) or graphic processing unit (GPU).

The first input/output terminal 300 is an input/output terminal for communication between the outside of the SIP semiconductor system and the controller 200 . The first input/output terminal 300 can be configured to include an input/output terminal of a general SIP semiconductor system.

The controller 200 communicates with devices external to the SIP semiconductor system through the first input/output terminal 300 , and controls the memory device 100 .

The test control unit 400 controls a predetermined test mode of the memory device 100 .

The test control unit 400 controls the memory device 100 to perform various predetermined test modes (e.g., a repair operation). The predetermined test mode of the test control unit 400 includes a variety of tests. The test control unit 400 can include a plurality of algorithms for performing the predetermined test mode. The test of the memory device 100 , performed by the test control unit 400 includes a voltage test (AC or DC test), a functional test of semiconductor logic, a memory cell test, and the like. However, the present invention is not limited thereto. Particularly, since memory devices such as DRAMs or flash memories include a large number of memory cells, much time may be taken to perform the memory cell test for finding a defective memory cell. Thus, the memory cell test performed through the test control unit 400 can decrease test time and increase test efficiency as compared with that performed through external test equipment.

The test control unit 400 directly controls the memory device 100 , and can communicate with devices external to the SIP semiconductor system through the second input/output terminal 500 . Thus, the test control unit 400 may not need to communicate with the controller 200 for some of its functionality.

For example, when the predetermined test mode is a repair operation, the SIP semiconductor system according to this embodiment can repair a defective storage element of the memory device 100 . Alternatively, the SIP semiconductor system according to this embodiment can repair a defective TSV in the memory device 100 including the plurality of memory chips stacked using the TSV.

More specifically, the memory device 100 further includes a fuse unit 110 having an electrical fuse (E-fuse) for restoring a defective storage element or defective TSV. The memory device 100 can be configured to perform a rupture operation on the E-fuse by performing the predetermined test mode.

The test control unit 400 can be configured separately from the memory device in the inside of the SIP semiconductor system. The test control unit 400 can be configured to be included in the memory device 100 . It will be apparent that the present invention is not limited to where the test control unit 400 is positioned in the SIP semiconductor system.

As an example, when the memory device 100 is configured to include a plurality of memory chips, the test control unit 400 can be included in each of the plurality of memory chips. The memory device 100 configured so that the test control unit 400 included in each of the plurality of memory chips can perform the predetermined test mode in the state where the memory device 100 is connected in parallel to the plurality of memory chips.

As another example, when the memory device 100 is configured to include a plurality of memory chips stacked using the TSV, the test control unit 400 can be included in one of the plurality of memory chips. Among the plurality of memory chips, the memory chip with the test control unit 400 may be a memory chip (e.g., a master chip) communicating with the controller 200 .

The second input/output terminal 500 is an input/output terminal for communication between the test control unit 400 and the outside of the SIP semiconductor system.

The SIP semiconductor system configured as described above can control the memory device by communicating with the controller 200 through the first input/output terminal 300 . The SIP semiconductor system can control the memory device 100 to perform the predetermined test mode by communicating with the test control unit 400 through the second input/output terminal 500 .

Thus, the SIP semiconductor system can perform the test of the memory device 100 without passing through the controller 200 .

The test control unit 400 can be configured using IEEE 1149.1.

The IEEE 1149.1 (JTAG Boundary Scan test) is a serial standard interface used as a standard in communication between a SIP semiconductor system and a device external (e.g., a system board) to the SIP semiconductor system.

The test control unit 400 configured using the IEEE 1149.1 has advantages as follows.

The IEEE 1149.1 is a standardized interface, and its configuration is relatively simple. Thus, it is easy to design the test control unit 400 . Further, it is unnecessary to have a complicated configuration like the related art DFT using an RA algorithm.

The IEEE 1149.1 is an interface used as a standard in communication between the related art SIP semiconductor system and the system board. Thus, the test can be performed by loading the SIP semiconductor system according to an embodiment of the present invention onto the system board without configuring a separate logic on the system board.

The SIP semiconductor system according to this embodiment is configured using the IEEE 1149.1 so as to have characteristics suitable for communication with the system board.

The IEEE 1149.1 is frequently used in current test communication between the system board and the SIP semiconductor system, but the test control unit 400 can be differently configured depending on a change in IEEE standard interface. That is, the test control unit 400 can be configured not only using the IEEE 1149.1 but also using the IEEE standard interface. When the test control unit 400 is configured using the IEEE 1149.1, the second input/output terminal 500 is preferably configured as a test access port for supporting the IEEE 1149.1.

The test access port of the IEEE 1149.1 can be configured to include TDI, TDO, TMS, TCK, and TRST.

The TDI is a test data input terminal, and the TDO is a test data output terminal. The TMS is a test mode select terminal, and the TCK is a test clock-signal terminal. The TRST is a test reset terminal.

The IEEE 1149.1 is configured to perform a recording operation for an internal register under communication of the test access port. One embodiment for setting the internal register will be described later.

FIG. 2 is a detailed block diagram of the test control unit 400 illustrated in FIG. 1 .

The test control unit 400 can be configured to include a test register unit 410 and a test logic unit 420 .

The test register unit 410 generates a test code tcode<0:5> in an internal register 411 according to an input signal TDI, TCK, TMS or TRST received from the second input/output terminal 500 .

The test register unit 410 can be configured using, for example, the IEEE 1149.1.

The test code tcode<0:5> can be recorded in the internal register 411 by the input signal TDI, TCK, TMS or TRST received from the second input/output terminal 500 . In addition, the test code tcode<0:5> can be recorded in the internal register 411 by a test result tres<0:5> generated as the memory device 100 performs a test mode. The embodiment for setting the internal register will be described later.

The test logic unit 420 generates test control signals MRSCMD and FADD<0:3> according to the test code tcode<0:5> stored in the internal register 411 , and provides the generated test control signals to the memory device 100 .

For example, the test logic unit 420 can generate the test control signal MRSCMD so that the memory device 100 starts a repair operation in response to the test code tcode<1>. In this case, the test control signal MRSCMD can be configured to include a mode register setting signal.

The test logic unit 420 can also generate the test control signal FADD<0:3> so that the semiconductor device 100 performs the repair operation in response to the test code tcode<2:5> stored in the internal register 411 . In this case, the test control signal FADD<0:3> can be configured to include a fuse address signal.

The memory device 100 can perform the predetermined test mode (e.g., a repair operation such as an available fuse search operation or rupture operation) in response to the test control signals MRSCMD and FADD<0:3>.

The test logic unit 420 can be configured to receive the test result tres<0:5> from the memory device 100 and provide the received test result to the test register unit 410 . In this case, the test register unit 410 can be configured to record the test result tres<0:5> in the internal register 411 and output the test result tres<0:5> recorded in the internal register 411 to the outside through the second input/output terminal via TDO using the IEEE 1149.1.

Although it has been illustrated in FIG. 2 that the test code tcode<0:5> and the test result tres<0:5> are 6-bit signals, the present invention is not limited thereto.

FIG. 3 illustrates one embodiment of the predetermined test mode operation based on settings of the internal register 411 illustrated in FIG. 2 .

It is assumed that the memory device 100 has an electrical fuse for restoring a defective storage element.

The predetermined test mode operation can be configured to include a repair operation such as an available fuse search operation or rupture operation.

The available fuse search operation is an operation of searching for an available electrical fuse among electrical fuses provided to the memory device 100 .

The rupture operation is an operation of rupturing the available electrical fuse according to a test code.

In order to perform the available fuse search operation, the internal register 411 can include, for example, a fuse search start register r 1 , available fuse information registers r 2 to r 5 , and a fuse search end register r 6 .

The fuse search start register r 1 determines whether the operation of searching the available electrical fuse is to start for the purpose of repair. Thus, the fuse search start register r 1 can be configured to have a single bit. A value of the fuse search start register r 1 is recorded by the input signal inputted from the second input/output terminal 500 .

The test logic unit 420 illustrated in FIG. 2 receives the value of the fuse search start register r 1 as the test code tcode<0>. Accordingly, the test control signal MRSCMD can be generated so that the memory device 100 performs the available fuse search operation. For example, when the value of the fuse search start register r 1 is 1, the test logic unit 420 can generate the test control signal MRSCMD so that the memory device 100 performs the available fuse search operation.

The available fuse information registers r 2 to r 5 are registers in which information on available electrical fuses is recorded. Values of the available fuse information registers r 2 to r 5 are recorded according to the test result tres<0:4> inputted from the memory device 100 . In the available fuse search operation, the test result tres<0:4> can include information on available electrical fuses and a fuse search end signal.

The available fuse information registers r 2 to r 5 are preferably configured to have a storage space of bits (4 bits) respectively corresponding to electrical fuses (e.g., 4) included in the memory device 100 . For example, the available fuse information registers r 2 to r 5 can be configured to have a storage space of 4 bits respectively corresponding to four electrical fuses.

If the memory device 100 outputs the information on available electrical fuses as the test result tres<1:4> through the available fuse search operation, the values of the available fuse information registers r 2 to r 5 , respectively corresponding to the available electrical fuses are recorded as 1. For unavailable fuses, the values of the available fuse information registers r 2 to r 5 respectively corresponding to unavailable electrical fuses are recorded as 0.

The fuse search end register r 6 is a register in which the end of the available fuse search operation is recorded. Thus, the fuse search end register r 6 can be configured to have a single bit. A value of the fuse search end register r 6 is recorded by the search result inputted from the memory device 100 .

For example, if the memory device 100 outputs an available search operation end signal as the test result tres<0> through the available fuse search operation, the value of the fuse search end register r 6 is changed from 0 to 1. If the value of the fuse search start register r 1 is set to 1, the value of the fuse search end register r 6 is reset to 0.

In order to perform the rupture operation, the internal register 411 can include a rupture start register r 7 , rupture object fuse information registers r 8 to r 11 , and a rupture end register r 12 .

The rupture start register r 7 determines whether the operation of rupturing the electrical fuse is started for the purpose of repair. Thus, the rupture start register r 7 can be configured to have a single bit. A value of the rupture start register r 7 is recorded by the input signal TDI, TMS, TCK, or TRST inputted from the second input/output terminal 500 .

The test logic unit 420 illustrated in FIG. 2 receives the value of the rupture register r 7 as the test code tcode<1>. Accordingly, the test control signal MRSCMD can be generated so that the memory device 100 starts the operation of rupturing a corresponding electrical fuse. For example, when the value of the rupture register value r 7 is 1, the test logic unit 420 can generate the test control signal MRSCMD so that the memory device 100 performs the operation of rupturing the corresponding electrical fuse.

The rupture object fuse information registers r 8 to r 11 are registers in which addresses of electrical fuses subjected to the rupture operation are recorded. Values of the rupture object fuse information registers r 8 to r 11 are recorded by the input signal TDI, TMS, TCK, or TRST inputted from the second input/output terminal 500 .

The rupture object fuse information registers r 8 to r 11 is preferably configured to have a storage space of bits (4 bits) respectively corresponding to electrical fuses (e.g., 4) included in the memory device 100 . For example, the rupture object fuse information registers r 8 to r 11 can be configured to have a storage space of 4 bits respectively corresponding to four electrical fuses.

The values of the rupture object fuse information registers r 8 to r 11 , respectively corresponding to electrical fuses subjected to the rupture operation, are recorded as 1. On the contrary, the values of the rupture object fuse information registers r 8 to r 11 , respectively corresponding to electrical fuses not subjected to the rupture operation, are recorded as 0.

The test logic unit 420 receives the values of the fuse information registers r 8 to r 11 as the test code tcode<2:5>. Accordingly, the test control signal FADD<0:3> can be generated so that the memory device 100 ruptures a corresponding electrical fuse.

The rupture end register r 12 is a register in which the end of the rupture operation is recorded. Thus, the rupture end register r 12 can be configured to have a single bit. A value of the rupture end register r 12 is recorded by the search result inputted from the memory device 100 .

For example, if the memory device 100 outputs an available fuse search operation end signal as the test result tres<5> through the available fuse search operation, the value of the rupture end register r 12 is changed from 0 to 1. If the value of the rupture register r 7 is set to 1, the value of the rupture end register r 12 is reset to 0.

While certain embodiments have been described above, it will be understood to those skilled in the art that the embodiments described are by way of example only. Accordingly, the SIP semiconductor system described herein should not be limited based on the described embodiments. Rather, the SIP semiconductor system described herein should only be limited in light of the claims that follow when taken in conjunction with the above description and accompanying drawings.