Method for compensating proximity effects of particle beam lithography processes

This application claims the benefits of a provisional application Ser. No. 61/446,077, filed Feb. 24, 2011, and Taiwan application Serial No. 100123715, filed Jul. 5, 2011, the subject matters of which are incorporated herein by reference.

1. Field of the Invention

The invention relates in general to a method for compensating proximity effects of lithography processes, and more particularly to a method for compensating proximity effects of particle beam lithography processes.

2. Description of the Related Art

Lithography technology, which plays a very important role in the semiconductor manufacturing process, must be conformed to new generation circuit design rules otherwise the development in the semiconductor industry will be hindered. In recent years, the integrated circuit design rules are directed towards miniaturization. Therefore, lithography technology, which is crucial to the effectiveness of patterning fidelity, must take the trend of miniaturization into consideration and require tremendous efforts in terms of labor, resources, capital and time in the development of exposing equipment, the establishment of manufacturing processes, the fabrication of masks and the application of relevant technologies.

The conventional lithography system mainly includes an item of optical lithography equipment. In terms of a deep ultra violet (DUV) light source, the resolution has much to do with the wavelength of the light source, and has a limit. Therefore, the development of lithography technology is gradually directed towards the electron beam, X-ray, extreme ultra violet (EUV) light, ion beam and so on.

The electron beam lithography technology is based on the concept of a scanning election microscope (SEM). The wavelength of the electron beam of the lithography technology is only several thousandth of the deep ultra violet light, hence producing excellent resolution. In order to make for the inadequacy in the resolution of an optical lithography system, electron beam lithography technology is also used in the direct writing of a wafer for directly printing the pattern on a photosensitive material disposed on a wafer surface.

The invention is directed to a method for compensating proximity effects of particle beam lithography processes. The method is performed by several recursive adjusting means, such that the difference between an actual pattern and a target pattern can be fitted in with a target value range.

According to a first aspect of the present invention, a method for compensating proximity effects of particle beam lithography processes is provided. The method comprises (a) providing a control pattern consisted of a set of control boundaries; (b) providing a dissection process, wherein the dissection process produces a set of points according to an import pattern which is composed of a set of boundaries, and the set of the boundaries pass through the set of the points; (c) providing a set of control points produced according to the dissection process and the control pattern, wherein the set of the control boundaries pass through the set of the control points; (d) defining the control pattern as being an input pattern of the lithography process; (e) providing a target pattern consisted of a set of target boundaries; (f) providing a set of target points produced according to the dissection process and the target pattern, the set of the target boundaries passing through the set of the target points; (g) providing a set of target measurement values, wherein the set of the target measurement values are obtained from the set of the target points and the set of the target boundaries; (h) defining an actual pattern consisted of a set of actual boundaries; (i) providing a set of actual measurement values, wherein the actual measurement values are obtained from the set of the target points and the set of the actual boundaries; (j) calculating a set of comparison values according to the set of the target measurement values and the set of the actual measurement values; (k) providing an adjusting strategy; (l) producing a corrected pattern according to the set of the comparison values and the adjusting strategy, the corrected pattern consisted of a set of corrected boundaries and the set of the corrected boundaries passing through the set of the control points; and (m) defining the corrected pattern as an updated input pattern of the lithography process according to the set of the corrected boundaries.

The invention will become apparent from the following detailed description of the preferred but non-limiting embodiments. The following description is made with reference to the accompanying drawings.

FIGS. 1A-1B show a flowchart of a method for compensating proximity effects of particle beam lithography processes according to a preferred embodiment of the invention; and

FIG. 2 illustrates FIGS. 1A-1B .

An embodiment is disclosed below for elaborating the invention. However, the embodiment is for exemplification purpose only, not for limiting the scope of protection of the invention. Also, secondary elements are omitted in the embodiment for highlighting the technical features of the invention.

Please refer to FIGS. 1A-1B and 2 at the same time. FIGS. 1A-1B show a flowchart of a method for compensating a proximity effect of a particle beam lithography process according to a preferred embodiment of the invention. FIG. 2 illustrates FIGS. 1A-1B . In the present embodiment, the particle beam can be an ion beam, an electron beam or a neutron beam.

Further, the proximity effect is resulted from an accumulative energy or a scattering of particles in a resist layer, and the proximity effect results in the difference between a target pattern and an actual pattern.

Firstly, in step S 101 , a control pattern 110 is provided. The control pattern 110 is consisted of a set of control boundaries 111 . As shown in FIG. 2 , each of the set of the control boundaries 111 encloses a region with a constant energy distribution respectively.

Next, in step S 102 , a dissection process is provided. The dissection process produces a set of points according to an import pattern which is composed of a set of boundaries, and the set of the boundaries pass through the set of the points.

Afterwards, in step S 103 , a set of control points 112 is provided. The control points 112 are produced according to the dissection process and the control pattern 110 . As shown in FIG. 2 , the set of the control boundaries 111 pass through the set of the control points 112 .

Then, in step S 104 , the control pattern 110 is defined as being an input pattern of the lithography process.

Next, in step S 105 , a target pattern 120 is provided. As shown in FIG. 2 , the target pattern 120 is consisted of a set of target boundaries 121 .

In addition, the set of the target boundaries 121 represent a target energy distribution or a set of target resist contours.

Afterwards, in step S 106 , a set of target points 122 are produced according to the dissection process and the target pattern 120 . The set of the target boundaries 121 pass through the set of the target points 122 .

Next, in step 107 , a set of target measurement values are provided. The set of the target measurement values are obtained from the set of the target points 122 and the set of the target boundaries 121 .

Next, in step 108 , an actual pattern 130 is defined. The actual pattern 130 is consisted of a set of actual boundaries 131 .

In addition, the actual pattern 130 is obtained by processing a lithography process from the input pattern, i.e. the control pattern 110 .

Furthermore, the actual pattern 130 can be also obtained via a numerical simulating process from the input pattern, i.e. the control pattern 110 . The numerical simulating process includes a numerical model, and the numerical model is used for predicting the actual boundaries 131 in the lithography process.

Moreover, the actual boundaries 131 represent a set of actual energy distributions or a set of actual resist contours.

Afterwards, in step S 109 , a set of actual measurement values are obtained from the set of the target points 122 and the set of the actual boundaries 131 .

Next, in step S 110 , a set of comparison values are calculated according to the set of the target measurement values and the set of the actual measurement values.

Afterwards, in step S 111 , an adjusting strategy is provided.

Then, in step S 112 , a corrected pattern 140 is produced according to the set of the comparison values and the adjusting strategy. As shown in FIG. 2 , the corrected pattern 140 is consisted of a set of corrected boundaries 141 . The set of the corrected boundaries 141 pass through the set of the control points 142 .

Afterwards, in step S 113 , the corrected pattern 140 is defined as an updated input pattern of the lithography process according to the set of the corrected boundaries 141 .

In the present method, a target value range or a maximum recursive number is defined. If the comparison values do not reach the target value range, then the adjusting strategy is performed. Then, whether the comparison values reach the target value range or not is determined again until the comparison values reach the target value range or the recursive number reaches the maximum recursive number.

The present embodiment is used to adjust the proximity effect of the particle beam lithography process by several recursive steps, such that the precision of the particle beam lithography process can be improved greatly. It is an extreme progress for the semiconductor lithography process.

While the invention has been described by way of example and in terms of a preferred embodiment, it is to be understood that the invention is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.