Light emitting device

The light emitting device of the fourth embodiment illustrated in FIG. 4 was produced. The blue LED that emits the blue light having the wavelength of 455 nm was used as the light emitting element. In the blue LED, an InGaN compound semiconductor was used as an active layer. At this point, the sialon green phosphor having the composition and peak wavelength illustrated in a field of Example 1 of TABLE 1 was applied. The CASN red phosphor illustrated in TABLE 3 was applied to the first red phosphor. The sialon red phosphor having the composition and peak wavelength illustrated in a field of Example 1 of TABLE 2 was applied. A mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that a color temperature became near the warm-white color (2800 K).

When the obtained light emitting device of Example 1 was driven at 20 mA, the color rendering property was evaluated with respect to the average color rendering index Ra and the special color rendering indexes R9 and R15 based on the evaluation method of JISZ8726. The luminous efficiency of the light emitting device was also evaluated. The luminous efficiency was evaluated using an integrating sphere. TABLE 4 illustrates the result. In the evaluation of the peak wavelength, the single phosphor was irradiated with the excitation light of the blue LED to measure the wavelength of the emitted light.

TABLE 1 illustrates values of x, y, z, u, and w in the equation (3) that is of the composition of the sialon green phosphor. TABLE 2 illustrates values of x2, a2, b2, c2, and d2 in the equation (2) that is of the composition of the sialon red phosphor. TABLE 3 illustrates values of x1, a1, b1, c1, and d1 in the equation (1) that is of the composition of the CASN red phosphor.

The light emitting device was produced and evaluated similarly to Example 1 except that the sialon green phosphor illustrated in the field of Example 2 of TABLE 1 was applied to the green phosphor, the CASN red phosphor illustrated in the field of Example 2 of TABLE 3 was applied to the first red phosphor, and the sialon red phosphor illustrated in the field of Example 1 of TABLE 2 was applied to the second red phosphor. TABLE 4 illustrates the result.

The light emitting device of the first embodiment illustrated in FIG. 1 was produced. The sialon green phosphor illustrated in the field of Example 3 of TABLE 1 was applied to the green phosphor, the CASN red phosphor illustrated in the field of Example 3 of TABLE 3 was applied to the first red phosphor, and the sialon red phosphor illustrated in the field of Example 3 of TABLE 2 was applied to the second red phosphor. The light emitting device was produced and evaluated similarly to Example 1 except above matter. TABLE 4 illustrates the result.

The light emitting device of the second embodiment illustrated in FIG. 2 was produced. The sialon green phosphor illustrated in the field of Example 4 of TABLE 1 was applied to the green phosphor, the CASN red phosphor illustrated in the field of Example 4 of TABLE 3 was applied to the first red phosphor, and the sialon red phosphor illustrated in the field of Example 4 of TABLE 2 was applied to the second red phosphor. The light emitting device was produced and evaluated similarly to Example 1 except above matter. TABLE 4 illustrates the result.

The light emitting device of the third embodiment illustrated in FIG. 3 was produced. The sialon green phosphor illustrated in the field of Example 5 of TABLE 1 was applied to the green phosphor, the CASN red phosphor illustrated in the field of Example 5 of TABLE 3 was applied to the first red phosphor, and the sialon red phosphor illustrated in the field of Example 5 of TABLE 2 was applied to the second red phosphor. The light emitting device was produced and evaluated similarly to Example 1 except above matter. TABLE 4 illustrates the result.

The light emitting device of the third embodiment illustrated in FIG. 3 was produced. The LED chip 12 that emits the blue light having the peak wavelength of 455 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto an 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to an electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of a dome shape, and the transparent resin 20 is applied onto the transparent resin 18 in the form of laminae. In a mixed red phosphor, the CASN red phosphor illustrated in the field of Example 6 of TABLE 3 as the first red phosphor and the sialon red phosphor illustrated in the field of Example 6 of TABLE 2 as the second red phosphor are mixed at a weight ratio 1:6.8. The 30-weight-percent mixed red phosphor is dispersed in the transparent resin 20 . The transparent resin 30 is applied onto the transparent resin 20 in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 6 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The outermost transparent resin layer 24 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the seventh embodiment illustrated in FIG. 7 was produced. The LED chip 12 that emits the blue light having the peak wavelength of 455 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The LED is sealed by the transparent resin 16 and the flat-plate-shape transparent resin 20 a is applied onto the transparent resin 16 in the form of laminae. The 10-weight-percent CASN red phosphor illustrated in the field of Example 7 of TABLE 3 as the first red phosphor is dispersed in the transparent resin 20 a . The transparent resin 20 b is applied onto the transparent resin 20 a in the form of the laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Example 7 of TABLE 2 as the second red phosphor is dispersed in the transparent resin 20 b . The transparent resin 20 b is covered with the flat-plate-shape transparent resin 30 , and the flat-plate-shape transparent resin 22 is applied onto the transparent resin 30 . The 30-weight-percent sialon green phosphor illustrated in the field of Example 7 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The outermost transparent resin layer 24 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the seventh embodiment illustrated in FIG. 7 was produced. The LED chip 12 that emits the blue light having the peak wavelength of 455 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The LED is sealed by the resin 16 and the flat-plate-shape transparent resin 20 a is applied onto the transparent resin 16 in the form of laminae. The 10-weight-percent CASN red phosphor illustrated in the field of Example 8 of TABLE 3 as the first red phosphor is dispersed in the transparent resin 20 a . The transparent resin 20 b is applied onto the transparent resin 20 a in the form of the laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Example 8 of TABLE 2 as the second red phosphor is dispersed in the transparent resin 20 b . The transparent resin 20 b is covered with the flat-plate-shape transparent resin 30 , and the flat-plate-shape transparent resin 22 is applied onto the transparent resin 30 in the form of the laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 8 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The outermost transparent resin layer 24 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. A mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that a color temperature became near the warm-white color (2800 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the fifth embodiment illustrated in FIG. 5 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of the dome shape, and the transparent resin 20 is applied onto the transparent resin 18 in the form of laminae. In a mixed red phosphor, the CASN red phosphor illustrated in the field of Example 9 of TABLE 3 as the first red phosphor and the sialon red phosphor illustrated in the field of Example 9 of TABLE 2 as the second red phosphor are mixed at a weight ratio 1:7.6. The 30-weight-percent mixed red phosphor is dispersed in the transparent resin 20 . The transparent resin 30 is applied onto the transparent resin 20 in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 9 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ and the peak wavelength of 445 nm is dispersed in the transparent resin 28 . The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the sixth embodiment illustrated in FIG. 6 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of the dome shape, and the transparent resin 20 a is applied onto the transparent resin 18 in the form of laminae. The 10-weight-percent CASN red phosphor illustrated in the field of Example 10 of TABLE 3 as the first red phosphor is dispersed in the transparent resin 20 a . The transparent resin 20 b is applied onto the transparent resin 20 a in the form of the laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Example 10 of TABLE 2 as the second red phosphor is dispersed in the transparent resin 20 b . The transparent resin 30 is applied onto the transparent resin 20 b in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 10 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ is dispersed in the transparent resin 28 . The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the fifth embodiment illustrated in FIG. 5 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of the dome shape, and the transparent resin 20 is applied onto the transparent resin 18 in the form of laminae. In a mixed red phosphor, the CASN red phosphor illustrated in the field of Example 11 of TABLE 3 as the first red phosphor and the sialon red phosphor illustrated in the field of Example 11 of TABLE 2 as the second red phosphor are mixed at a weight ratio 1:7.6. The 30-weight-percent mixed red phosphor is dispersed in the transparent resin 20 . The transparent resin 30 is applied onto the transparent resin 20 in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 11 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ and the peak wavelength of 445 nm is dispersed in the transparent resin 28 .

A mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that a color temperature became near the warm-white color (2800 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the sixth embodiment illustrated in FIG. 6 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of the dome shape, and the transparent resin 20 a is applied onto the transparent resin 18 in the form of laminae. The 10-weight-percent CASN red phosphor illustrated in the field of Example 12 of TABLE 3 as the first red phosphor is dispersed in the transparent resin 20 a . The transparent resin 20 b is applied onto the transparent resin 20 a in the form of the laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Example 12 of TABLE 2 as the second red phosphor is dispersed in the transparent resin 20 b . The transparent resin 30 is applied onto the transparent resin 20 b in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 12 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ is dispersed in the transparent resin 28 . A mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that a color temperature became near the warm-white color (2800 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the ninth embodiment illustrated in FIG. 9 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The LED is sealed by the transparent resin 16 and the flat-plate-shape transparent resin 20 a is applied onto the transparent resin 16 in the form of laminae. The 10-weight-percent CASN red phosphor illustrated in the field of Example 13 of TABLE 3 as the first red phosphor is dispersed in the transparent resin 20 a . The transparent resin 20 b is applied onto the transparent resin 20 a in the form of the laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Example 13 of TABLE 2 as the second red phosphor is dispersed in the transparent resin 20 b . The transparent resin 20 b is covered with the flat-plate-shape transparent resin 30 , and the transparent resin 22 is applied onto the transparent resin 30 in the form of the laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 13 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ is dispersed in the transparent resin 28 . The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the warm-white color (2800 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the eighth embodiment illustrated in FIG. 8 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The LED is sealed by the transparent resin 16 , and the flat-plate-shape transparent resin 20 is applied onto the transparent resin 16 in the form of laminae. In a mixed red phosphor, the CASN red phosphor illustrated in the field of Example 14 of TABLE 3 as the first red phosphor and the sialon red phosphor illustrated in the field of Example 14 of TABLE 2 as the second red phosphor are mixed at a weight ratio 1:4.9. The 30-weight-percent mixed red phosphor is dispersed in the transparent resin 20 . The transparent resin 20 is covered with the flat-plate-shape transparent resin 30 , and the transparent resin 22 is applied onto the transparent resin 30 in the form of the laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 14 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ is dispersed in the transparent resin 28 . The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the warm-white color (2800 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the ninth embodiment illustrated in FIG. 9 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The LED is sealed by the transparent resin 16 and the flat-plate-shape transparent resin 20 a is applied onto the transparent resin 16 in the form of laminae. The 10-weight-percent CASN red phosphor illustrated in the field of Example 15 of TABLE 3 as the first red phosphor is dispersed in the transparent resin 20 a . The flat-plate-shape transparent resin 20 b is applied onto the transparent resin 20 a in the form of the laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Example 15 of TABLE 2 as the second red phosphor is dispersed in the transparent resin 20 b . The transparent resin 20 b is covered with the flat-plate-shape transparent resin 30 , and the transparent resin 22 is applied onto the transparent resin 30 in the form of the laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 15 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ is dispersed in the transparent resin 28 . The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

The light emitting device of the eighth embodiment illustrated in FIG. 8 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The LED is sealed by the transparent resin 16 , and the flat-plate-shape transparent resin 20 is applied onto the transparent resin 16 in the form of laminae. In a mixed red phosphor, the CASN red phosphor illustrated in the field of Example 16 of TABLE 3 as the first red phosphor and the sialon red phosphor illustrated in the field of Example 16 of TABLE 2 as the second red phosphor are mixed at a weight ratio 1:4.9. The 30-weight-percent mixed red phosphor is dispersed in the transparent resin 20 . The transparent resin 20 is covered with the flat-plate-shape transparent resin 30 , and the transparent resin 22 is applied onto the transparent resin 30 in the form of the laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 16 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ is dispersed in the transparent resin 28 . The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

Examples 17 to 20

The light emitting devices were produced and evaluated similarly to Example 1 except that the sialon green phosphor illustrated in the field of Examples 17 to 20 of TABLE 5 were applied to the green phosphor, the CASN red phosphor illustrated in the field of Example 10 of TABLE 3 was applied to the first red phosphor, and the sialon red phosphor illustrated in the field of Examples 17 to 20 of TABLE 6 were applied to the second red phosphor. TABLE 7 illustrates the result.

Examples 21 to 24

The light emitting devices of the third embodiment illustrated in FIG. 3 were produced. The LED chip 12 that emits the blue light having the peak wavelength of 455 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto an 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to an electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of a dome shape, and the transparent resin 20 is applied onto the transparent resin 18 in the form of laminae. In a mixed red phosphor, the CASN red phosphor illustrated in the field of Example 6 of TABLE 3 as the first red phosphor and the sialon red phosphor illustrated in the field of Examples 21 to 24 of TABLE 6 as the second red phosphor are mixed at a weight ratio 1:6.8. The 30-weight-percent mixed red phosphor is dispersed in the transparent resin 20 . The transparent resin 30 is applied onto the transparent resin 20 in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Example 6 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The outermost transparent resin layer 24 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The mixture ratio of the first red phosphor, the second red phosphor, and the green phosphor was designed such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 7 illustrates the result.

Comparative Example 1

The light emitting device similar to that of the third embodiment illustrated in FIG. 3 was produced. The silicate green phosphor illustrated in the field of Comparative example 1 of TABLE 1 was applied to the green phosphor, and the silicate red phosphor illustrated in the field of Comparative example 1 of TABLE 2 was applied to the red phosphor. The light emitting device was produced and evaluated similarly to Example 5 except above matter. TABLE 4 illustrates the result.

Comparative Example 2

The light emitting device similar to that of the first embodiment illustrated in FIG. 1 was produced. The silicate green phosphor illustrated in the field of Comparative example 2 of TABLE 1 was applied to the green phosphor, and the silicate red phosphor illustrated in the field of Comparative example 2 of TABLE 2 was applied to the red phosphor. The light emitting device was produced and evaluated similarly to Example 3 except above matter. TABLE 4 illustrates the result.

Comparative Example 3

The light emitting device similar to that of the third embodiment illustrated in FIG. 3 was produced. The sialon green phosphor illustrated in the field of Comparative example 3 of TABLE 1 was applied to the green phosphor, and the sialon red phosphor illustrated in the field of Comparative example 3 of TABLE 3 was applied to the red phosphor. The light emitting device was produced and evaluated similarly to Example 5 except above matter. TABLE 4 illustrates the result.

Comparative Example 4

The sialon green phosphor illustrated in the field of Comparative example 4 of TABLE 1 was applied to the green phosphor, and the sialon red phosphor illustrated in the field of Comparative example 4 of TABLE 3 was applied to the red phosphor. The green phosphor has the composition out of the equation (3), and the red phosphor has the composition out of the equation (2). Both the green phosphor and the red phosphor have the low luminous efficiency that is not enough to produce the light emitting device.

Comparative Example 5

The sialon green phosphor illustrated in the field of Comparative example 5 of TABLE 1 was applied to the green phosphor, and the sialon red phosphor illustrated in the field of Comparative example 5 of TABLE 3 was applied to the red phosphor. The green phosphor has the composition out of the equation (3), and the red phosphor has the composition out of the equation (2). Both the green phosphor and the red phosphor have the low luminous efficiency that is not enough to produce the light emitting device.

Comparative Example 6

The silicate green phosphor illustrated in the field of Comparative example 6 of TABLE 1 was applied to the green phosphor, and the nitride red phosphor illustrated in the field of Comparative example 5 of TABLE 3 was applied to the red phosphor. Both the green phosphor and the red phosphor have the low luminous efficiency that is not enough to produce the light emitting device.

Comparative Example 7

The light emitting device similar to that of the third embodiment illustrated in FIG. 3 was produced. The LED chip 12 that emits the blue light having the peak wavelength of 455 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto an 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to an electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 18 in the form of laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Comparative example 7 of TABLE 2 as the red phosphor is dispersed in the transparent resin 22 . The transparent resin 30 is applied onto the transparent resin 22 in the form of the dome shape, and the transparent resin 24 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Comparative example 7 of TABLE 1 as the green phosphor is dispersed in the transparent resin 24 , thereby producing the light emitting device. The design was made such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

Comparative Example 8

The light emitting device similar to that of the third embodiment illustrated in FIG. 3 was produced. The LED chip 12 that emits the blue light having the peak wavelength of 455 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto an 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to an electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of the dome shape, and the transparent resin 20 is applied onto the transparent resin 18 in the form of laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Comparative example 8 of TABLE 2 as the red phosphor is dispersed in the transparent resin 20 . The transparent resin 30 is applied onto the transparent resin 20 in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Comparative example 8 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The outermost transparent resin layer 24 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The design was made such that the color temperature became near the warm-white color (2800 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

Comparative Example 9

The light emitting device similar to that of the fifth embodiment illustrated in FIG. 5 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of the dome shape, and the transparent resin 20 is applied onto the transparent resin 18 in the form of laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Comparative example 9 of TABLE 2 as the red phosphor is dispersed in the transparent resin 20 . The transparent resin 30 is applied onto the transparent resin 20 in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Comparative example 9 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ is dispersed in the transparent resin 28 . The design was made such that the color temperature became near the white color (4200 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

Comparative Example 10

The light emitting device similar to that of the fifth embodiment illustrated in FIG. 5 was produced. The LED chip 12 that emits the near-ultraviolet light having the peak wavelength of 405 nm was used as the light emitting element. In the LED chip 12 , the InGaN compound semiconductor was used as the active layer. The LED chip 12 was bonded onto the 8-mm-square AlN package 10 by a solder, and the LED chip 12 was connected to the electrode through the gold wire 14 . The transparent resin 18 is applied on the LED in the form of the dome shape, and the transparent resin 20 is applied onto the transparent resin 18 in the form of laminae. The 30-weight-percent sialon red phosphor illustrated in the field of Comparative example 10 of TABLE 2 as the red phosphor is dispersed in the transparent resin 20 . The transparent resin 30 is applied onto the transparent resin 20 in the form of the dome shape, and the transparent resin 22 is applied onto the transparent resin 30 in the form of laminae. The 30-weight-percent sialon green phosphor illustrated in the field of Comparative example 10 of TABLE 1 as the green phosphor is dispersed in the transparent resin 22 . The transparent resin layer 28 is applied onto the transparent resin 22 in the form of laminae, thereby producing the light emitting device. The 30-weight-percent halophosphate blue phosphor having a composition expressed by (Sr,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ is dispersed in the transparent resin 28 . The design was made such that the color temperature became near the warm-white color (2800 K). The light emitting device was produced and evaluated similarly to Example 1. TABLE 4 illustrates the result.

In the light emitting devices of Examples 1 to 16, the high average color rendering index Ra and special color rendering index R9 and R15 were obtained compared with the light emitting devices of Comparative examples 1 to 9. In Examples 1 to 16, the light emitting device having the structure in which the application structure suppresses the re-absorption between the phosphors had the luminous efficiency (luminous flux efficiency) higher than that of the light emitting device having no structure which the application structure suppresses the re-absorption between the phosphors.