Power circuit
Granted 24 Apr 2012 · no office action yet
Current assignee: HONG FU JIN PRECISION INDUSTRY (SHENZHEN) CO., LTD. (Foxconn) · originally Foxconn Technology Group
Law firm: Law firm · Log in to unlock
Attorney: Attorney · Log in to unlock
Inventors: Hai-Qing Zhou · Examiner: M Elamin · AU 2116 · TC 2100
Life of the application
6 dated eventsAbstract
A power circuit includes a memory power circuit and a central processing unit (CPU) power circuit. The memory power circuit includes a first operational amplifier and a first switch. The CPU power circuit includes a second operational amplifier and a second switch. The memory power circuit supplies power to a memory slot. The CPU power circuit supplies power to a CPU.
Description
3 parts›BACKGROUND
1. Technical Field
The present disclosure relates to a power circuit.
2. Description of Related Art
On some motherboards, power circuitry for memory chips are separated from power circuitry for the central processing unit (CPU). This is because the memory chips and the CPU runs on different voltages, that is, some memory chips runs on 2.5 volts(V) and the CPU runs on 1.5V. However, having separate power circuitry on different areas of the motherboard will involve duplication of some components. This increases the cost of the motherboard. Therefore there is room for improvement in the art.
›BRIEF DESCRIPTION OF THE DRAWING
Many aspects of the present embodiments can be better understood with reference to the following drawing. The components in the drawing are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the present embodiments. Moreover, in the drawing, all the views are schematic, and like reference numerals designate corresponding parts throughout.
The FIGURE is a circuit diagram of an exemplary embodiment of a power circuit.
›DETAILED DESCRIPTION
The disclosure, including accompanying drawing in which like references indicate similar elements, is illustrated by way of example and not by way of limitation. It should be noted that references to “an” or “one” embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.
Referring to the drawing, an exemplary embodiment of a power circuit is arranged on a motherboard 10 . The power circuit includes a memory power circuit 100 and a central processing unit (CPU) power circuit 200 .
The circuit 100 includes a first operational amplifier U 1 , a first switch, resistors R 1 -R 3 , and capacitors C 1 -C 3 . In the embodiment, the first switch is a metal-oxide-semiconductor field effect transistor (MOSFET) Q 1 .
A non-inverting input of the first operational amplifier U 1 is connected to a first power source Vcc 1 via the resistor R 1 , and grounded via the resistor R 2 and the capacitor C 1 in parallel. An inverting input of the first operational amplifier U 1 is grounded via the capacitor C 2 . An output of the first operational amplifier U 1 is connected to the inverting input of the first operational amplifier U 1 via the resistor R 3 . A power terminal of the first operational amplifier U 1 is connected to a second power source Vcc 2 . A ground terminal of the first operational amplifier U 1 is grounded.
A drain of the MOSFET Q 1 is connected to the first power source Vcc 1 , and grounded via capacitor C 3 . A gate of the MOSFET Q 1 is connected to the output of the first operational amplifier U 1 . A source of the MOSFET Q 1 is connected to a node A between the resistor R 3 and the capacitor C 2 . A power terminal VCC of a memory slot 300 of the motherboard 10 is connected to the node A.
The relationship between the voltage V-in 1 of the non-inverting input of the first operational amplifier U 1 , the voltage of the first power source Vcc 1 , and resistances of the resistors R 1 and R 2 is shown below.
V-in1=Vcc1×R2/(R1+R2)
The voltage of the first power source Vcc 1 is 3.3 volts (V). The resistances of R 1 and R 2 are such that the voltage V-in 1 of the non-inverting input of the first operational amplifier U 1 is 2.5V. The voltage at the output of the first operational amplifier U 1 turns on the MOSFET Q 1 . The first operational amplifier U 1 and the resistor R 3 compose a deep negative feedback circuit. The voltage of the inverting input of the first operational amplifier U 1 is equal to the voltage V-in 1 of the non-inverting input of the first operational amplifier U 1 . Therefore, the voltage of the node A is 2.5V. The memory power circuit 100 supplies power to the memory slot 300 via the power terminal VCC of the memory slot 300 .
The CPU power circuit 200 includes a second operational amplifier U 2 , a second switch, resistors R 4 -R 6 , and capacitors C 4 and C 5 . In the embodiment, the second switch is a MOSFET Q 2 .
A non-inverting input of the second operational amplifier U 2 is connected to the first power source Vcc 1 via the resistor R 4 , and grounded via the resistor R 5 and the capacitor C 4 in parallel. An inverting input of the second operational amplifier U 2 is grounded via the capacitor C 5 . An output of the second operational amplifier U 2 is connected to the inverting input of the second operation amplifier U 2 via the resistor R 6 . A power terminal of the second operational amplifier U 2 is connected to the second power source Vcc 2 . A ground terminal of the second operational amplifier U 2 is grounded.
A drain of the MOSFET Q 2 is connected to the node A of the memory power circuit 100 . A gate of the MOSFET Q 2 is connected to the output of the second operational amplifier U 2 . A source of the MOSFET Q 2 is connected to a node B between the resistor R 6 and the capacitor C 5 . A power terminal VCC of a CPU 400 of the motherboard 10 is connected to the node B.
The relationship between the voltage V-in 2 of the non-inverting input of the second operational amplifier U 2 , the voltage of the first power source Vcc 1 , and resistances of the resistors R 4 and R 5 is shown below.
V-in2=Vcc1×R5/(R4+R5)
The resistances of R 4 and R 5 are such that the voltage V-in 2 of the non-inverting input of the second operational amplifier U 2 is 1.5V. The output of the second operational amplifier U 2 is at a high voltage level. The MOSFET Q 2 is turned on. The second operational amplifier U 2 and the resistor R 6 compose a deep negative feedback circuit. The voltage of the inverting input of the second operational amplifier U 2 is equal to the voltage V-in 2 of the non-inverting input of the second operational amplifier U 2 . Therefore, the voltage of the node B is 1.5V. The CPU power circuit 200 supplies power to the CPU 400 via the power terminal VCC of the CPU 400 .
The foregoing description of the exemplary embodiments of the disclosure has been presented only for the purposes of illustration and description and is not intended to be exhaustive or to limit the disclosure to the precise forms disclosed. Many modifications and variations are possible in light of the above everything. The embodiments were chosen and described in order to explain the principles of the disclosure and their practical application so as to enable others of ordinary skill in the art to utilize the disclosure and various embodiments and with various modifications as are suited to the particular use contemplated. Alternative embodiments will become apparent to those of ordinary skills in the art to which the present disclosure pertains without departing from its spirit and scope. Accordingly, the scope of the present disclosure is defined by the appended claims rather than the foregoing description and the exemplary embodiments described therein.
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9 codes- G06F1/00
- H02M3/335
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