Semiconductor integrated circuit driving external FET and power supply incorporating the same

1. Field of the Invention

The present invention relates to a semiconductor integrated circuit and a power supply, and in particular to a semiconductor integrated circuit driving an external FET and a power supply incorporating the same.

2. Description of the Background Art

FET driving circuits for driving an external FET (Field Effect Transistor) have been developed. For example, a driving circuit controlling switching of a transistor is disclosed in Japanese Patent Laying-Open Nos. 2000-201475, 2004-088245, and 2003-235251 (Patent Documents 1-3).

Such a conventional driving circuit as described above is provided with a switching control circuit switching an external FET between an ON state and an OFF state. As the switching control circuit, for example, a circuit formed by combining an N-channel MOS (Metal Oxide Semiconductor) transistor with a P-channel MOS transistor is employed.

When an FET driving IC (Integrated Circuit) in which FET driving circuits are integrated has an abnormality such as a short circuit of an external terminal, there may be a case where control is performed to turn off an external FET by turning on one of the N-channel MOS transistor and the P-channel MOS transistor in the switching control circuit and turning off the other thereof, in order to prevent a large current from flowing into the external FET and breaking down the external FET or a circuit at the next stage of the external FET.

However, when a short circuit occurs between a ground potential, a power supply potential, or the like and an external terminal to which an output of the switching control circuit is connected, although the external FET can be turned off, a large current may flow into the MOS transistor in an ON state in the switching control circuit, and break down the MOS transistor.

To solve such a problem, there can be conceived a structure that turns off both of the N-channel MOS transistor and the P-channel MOS transistor in the switching control circuit when an abnormality occurs, and includes a pull-down resistor or a pull-up resistor supplying a gate of the external FET with a bias voltage turning off the external FET. In such a structure, however, due to a parasitic capacitance of the external FET and the pull-up resistor or the pull-down resistor generally having a value of several tens of kilo-ohms, a longer time is required to cause transition of a potential at the gate of the external FET from a potential corresponding to the ON state to a potential corresponding to the OFF state, which may break down the external FET or the circuit at the next stage of the external FET.

One object of the present invention is provide a semiconductor integrated circuit and a power supply capable of protecting both of an external FET and a circuit driving the external FET.

A semiconductor integrated circuit in accordance with an aspect of the present invention is a semiconductor integrated circuit driving an external FET, including: a switching control circuit having a first transistor and a second transistor coupled to the FET, and turning on and off the FET by turning on and off each of the first transistor and the second transistor, the FET attaining an OFF state when the first transistor is in an ON state and the second transistor is in an OFF state; a bias circuit supplying the FET with a bias voltage for turning off the FET when the first transistor and the second transistor are in an OFF state; and a protection control circuit turning off the FET by turning on the first transistor and turning off the second transistor when an abnormality is detected, and turning off the first transistor and the second transistor after a lapse of a predetermined time.

Preferably, the first transistor has a first conductive electrode coupled to a first fixed potential and a second conductive electrode coupled to a control electrode of the FET, the second transistor has a first conductive electrode coupled to the control electrode of the FET and a second conductive electrode coupled to a second fixed potential, the bias circuit includes a resistor having a first end coupled to the first fixed potential and a second end coupled to the control electrode of the FET, and the FET is turned off when the control electrode has a potential equal to the first fixed potential.

A power supply in accordance with an aspect of the present invention includes an FET and a semiconductor integrated circuit. The semiconductor integrated circuit includes a switching control circuit having a first transistor and a second transistor coupled to the FET, and turning on and off the FET by turning on and off each of the first transistor and the second transistor, and the FET attains an OFF state when the first transistor is in an ON state and the second transistor is in an OFF state. The semiconductor integrated circuit further includes a bias circuit supplying the FET with a bias voltage for turning off the FET when the first transistor and the second transistor are in an OFF state, and a protection control circuit turning off the FET by turning on the first transistor and turning off the second transistor when an abnormality is detected, and turning off the first transistor and the second transistor after a lapse of a predetermined time.

According to the present invention, both of an external FET and a circuit driving the external FET can be protected.

The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.

FIG. 1 shows a structure of a power supply in accordance with an embodiment of the present invention.

FIG. 2 shows a structure of a protection control circuit in a semiconductor integrated circuit incorporated into the power supply in accordance with the embodiment of the present invention.

FIG. 3 is a timing chart showing operation of a protection control circuit 3 .

Hereinafter, embodiments of the present invention will be described with reference to the drawings, in which identical or corresponding parts will be designated by the same reference numerals, and the description thereof will not be repeated.

FIG. 1 shows a structure of a power supply in accordance with an embodiment of the present invention.

Referring to FIG. 1 , a power supply 201 includes a semiconductor integrated circuit 101 , a P-channel MOS transistor M 11 , an N-channel MOS transistor M 12 , a coil L 11 , and a capacitor C 11 . Semiconductor integrated circuit 101 includes switching control circuits 1 A and 1 B, bias circuits 2 A and 2 B, a protection control circuit 3 , an abnormality detection circuit 11 , a PWM (Pulse Width Modulation) control circuit 12 , and external terminals T 1 and T 2 . Switching control circuit 1 A includes a P-channel MOS transistor (first transistor) M 1 and an N-channel MOS transistor (second transistor) M 2 . Switching control circuit 1 B includes a P-channel MOS transistor (second transistor) M 3 and an N-channel MOS transistor (first transistor) M 4 . Bias circuit 2 A includes a resistor R 1 , and bias circuit 2 B includes a resistor R 2 .

P-channel MOS transistor M 1 has a source (first conductive electrode) coupled to a power supply potential (first fixed potential). N-channel MOS transistor M 2 has a drain (first conductive electrode) coupled to a drain (second conductive electrode) of P-channel MOS transistor M 1 , and a source (second conductive electrode) coupled to a ground potential (second fixed potential). Resistor R 1 has a first end coupled to the power supply potential, and a second end coupled to the drain of P-channel MOS transistor M 1 and the drain of N-channel MOS transistor M 2 .

P-channel MOS transistor M 11 has a gate (control electrode) coupled to the drain of P-channel MOS transistor M 1 and the drain of N-channel MOS transistor M 2 , via external terminal T 1 .

When P-channel MOS transistor M 1 is in an ON state and N-channel MOS transistor M 2 is in an OFF state, P-channel MOS transistor M 11 has a gate potential equal to the power supply potential, and attains an OFF state. Further, when P-channel MOS transistor M 1 is in an OFF state and N-channel MOS transistor M 2 is in an ON state, P-channel MOS transistor M 11 has a gate potential equal to the ground potential, and attains an ON state.

When P-channel MOS transistor M 1 or N-channel MOS transistor M 2 is in the ON state, bias circuit 2 A has no effect on the gate potential of P-channel MOS transistor M 11 . When P-channel MOS transistor M 1 and N-channel MOS transistor M 2 are in the OFF state, bias circuit 2 A supplies the gate of P-channel MOS transistor M 11 with a bias voltage for turning off P-channel MOS transistor M 11 , that is, a power supply voltage.

P-channel MOS transistor M 3 has a source (first conductive electrode) coupled to the power supply potential (first fixed potential). N-channel MOS transistor M 4 has a drain (first conductive electrode) coupled to a drain (second conductive electrode) of P-channel MOS transistor M 3 , and a source (second conductive electrode) coupled to the ground potential (second fixed potential). Resistor R 2 has a first end coupled to the ground potential, and a second end coupled to the drain of P-channel MOS transistor M 3 and the drain of N-channel MOS transistor M 4 .

N-channel MOS transistor M 12 has a gate (control electrode) coupled to the drain of P-channel MOS transistor M 3 and the drain of N-channel MOS transistor M 4 , via external terminal T 2 .

When P-channel MOS transistor M 3 is in an ON state and N-channel MOS transistor M 4 is in an OFF state, N-channel MOS transistor M 12 has a gate potential equal to the power supply potential, and attains an ON state. Further, when P-channel MOS transistor M 3 is in an OFF state and N-channel MOS transistor M 4 is in an ON state, N-channel MOS transistor M 12 has a gate potential equal to the ground potential, and attains an OFF state.

When P-channel MOS transistor M 3 or N-channel MOS transistor M 4 is in the ON state, bias circuit 2 B has no effect on the gate potential of N-channel MOS transistor M 12 . When P-channel MOS transistor M 3 and N-channel MOS transistor M 4 are in the OFF state, bias circuit 2 B supplies the gate of N-channel MOS transistor M 12 with a bias voltage for turning off N-channel MOS transistor M 12 , that is, a ground voltage.

PWM (Pulse Width Modulation) control circuit 12 outputs to protection control circuit 3 a PWM signal for exclusively switching P-channel MOS transistor M 11 and N-channel MOS transistor M 12 between the ON state and the OFF state.

Protection control circuit 3 generates control signals CONT 1 -CONT 4 according to the PWM signal received from PWM control circuit 12 , and outputs control signals CONT 1 -CONT 4 to P-channel MOS transistor M 1 and N-channel MOS transistor M 2 in switching control circuit 1 A and P-channel MOS transistor M 3 and N-channel MOS transistor M 4 in switching control circuit 1 B, respectively.

According to control signals CONT 1 -CONT 4 received from protection control circuit 3 , switching control circuits 1 A and 1 B switch P-channel MOS transistor M 11 and N-channel MOS transistor M 12 , respectively, between the ON state and the OFF state.

An alternating-current voltage generated by the switching of each of P-channel MOS transistor M 11 and N-channel MOS transistor M 12 between the ON state and the OFF state is smoothed by coil L 11 and capacitor C 11 , and output to the outside as a power supply voltage.

Abnormality detection circuit 11 monitors output voltages of semiconductor integrated circuit 101 , that is, voltages at external terminals T 1 and T 2 . When abnormality detection circuit 11 determines that an abnormality occurs in the output voltage of semiconductor integrated circuit 101 , it outputs an abnormality detection signal DET to protection control circuit 3 .

Upon receiving abnormality detection signal DET from abnormality detection circuit 11 , protection control circuit 3 turns on P-channel MOS transistor M 1 and turns off N-channel MOS transistor M 2 irrespective of the PWM signal received from PWM control circuit 12 , and thereby turns off P-channel MOS transistor M 11 . Further, upon receiving abnormality detection signal DET from abnormality detection circuit 11 , protection control circuit 3 turns off P-channel MOS transistor M 3 and turns on N-channel MOS transistor M 4 irrespective of the PWM signal received from PWM control circuit 12 , and thereby turns off N-channel MOS transistor M 12 .

After a lapse of a predetermined time, protection control circuit 3 turns off P-channel MOS transistors M 1 and M 3 and N-channel MOS transistors M 2 and M 4 .

FIG. 2 shows a structure of the protection control circuit in the semiconductor integrated circuit incorporated into the power supply in accordance with the embodiment of the present invention.

Referring to FIG. 2 , protection control circuit 3 includes NOT circuits G 1 -G 3 , a NOR circuit G 4 , a NAND circuit G 5 , OR circuits G 6 and G 7 , AND circuits G 8 and G 9 , and a delay circuit 21 .

NOT circuit G 1 , NOR circuit G 4 , and delay circuit 21 receive abnormality detection signal DET from abnormality detection circuit 11 . NOT circuit G 2 receives the PWM signal from PWM control circuit 12 .

Delay circuit 21 delays abnormality detection signal DET for a predetermined time, and outputs the delayed signal to NOT circuit G 3 and to OR circuits G 6 and G 7 . Delay circuit 21 can be formed of, for example, an analog circuit including a capacitor and a resistor, or a digital circuit including a counter.

OR circuit G 6 outputs control signal CONT 1 to a gate of P-channel MOS transistor M 1 . AND circuit G 8 outputs control signal CONT 2 to a gate of N-channel MOS transistor M 2 . OR circuit G 7 outputs control signal CONT 3 to a gate of P-channel MOS transistors M 3 . AND circuit G 9 outputs control signal CONT 4 to a gate of N-channel MOS transistor M 4 .

FIG. 3 is a timing chart showing operation of protection control circuit 3 . Herein, it is assumed that abnormality detection circuit 11 does not detect an abnormality when abnormality detection signal DET is at an L level, and abnormality detection circuit 11 detects an abnormality when abnormality detection signal DET is at an H level.

Referring to FIG. 3 , when abnormality detection signal DET is at the L level, protection control circuit 3 determines logic levels of control signals CONT 1 -CONT 4 according to the PWM signal.

During a period from when abnormality detection signal DET changes from the L level to the H level until when a predetermined delay time elapses, protection control circuit 3 sets control signal CONT 1 to an L level, control signal CONT 2 to an L level, control signal CONT 3 to an H level, and control signal CONT 4 to an H level. Specifically, protection control circuit 3 turns on P-channel MOS transistor M 1 and turns off N-channel MOS transistor M 2 , thereby setting a drive signal DRVA to an H level and turning off P-channel MOS transistor M 11 . Further, protection control circuit 3 turns off P-channel MOS transistor M 3 and turns on N-channel MOS transistor M 4 , thereby setting a drive signal DRVB to an L level and turning off N-channel MOS transistor M 12 .

After the predetermined delay time elapses, protection control circuit 3 sets control signal CONT 1 to an H level, control signal CONT 2 to the L level, control signal CONT 3 to the H level, and control signal CONT 4 to an L level. Specifically, protection control circuit 3 turns off P-channel MOS transistors M 1 and M 3 and N-channel MOS transistors M 2 and M 4 . On this occasion, bias circuit 2 A maintains drive signal DRVA at the H level, that is, maintains P-channel MOS transistor M 11 in the OFF state, by means of resistor R 1 pulled up to the power supply potential. Further, bias circuit 2 B maintains drive signal DRVB at the L level, that is, maintains N-channel MOS transistor M 12 in the OFF state, by means of resistor R 2 pulled down to the ground voltage.

Protection control circuit 3 performs control as shown in FIG. 3 not only when abnormality detection circuit 11 detects an abnormality but also when power supply 201 is stopped during normal operation. Thereby, semiconductor integrated circuit 101 can be configured with a simpler structure.

In a conventional FET driving IC, when a short circuit occurs between a ground potential, a power supply potential, or the like and an external terminal to which an output of a switching control circuit switching an external FET between an ON state and an OFF state is connected, although the external FET can be turned off, a large current may flow into a MOS transistor in an ON state in the switching control circuit, and break down the MOS transistor. Or else, due to a parasitic capacitance of the external FET and a pull-up resistor or a pull-down resistor generally having a value of several tens of kilo-ohms, a longer time is required to cause transition of a potential at a gate of the external FET from a potential corresponding to the ON state to a potential corresponding to the OFF state, which may break down the external FET or a circuit at the next stage of the external FET.

However, in the semiconductor integrated circuit in accordance with the embodiment of the present invention, when an abnormality is detected, protection control circuit 3 turns off an external FET by turning on one of the MOS transistors in the switching control circuit and turning off the other MOS transistor, and after a lapse of a predetermined time, protection control circuit 3 turns off the two MOS transistors. Subsequently, the bias circuit supplies the external FET with a bias voltage for turning off the external FET.

Consequently, the semiconductor integrated circuit in accordance with the embodiment of the present invention can quickly turn off the external FET when an abnormality occurs to reliably protect the external FET and a circuit at the next stage of the external FET, and can protect a circuit such as a transistor in the semiconductor integrated circuit for driving the external FET.

Although the power supply in accordance with the embodiment of the present invention is described to include P-channel MOS transistor M 11 and N-channel MOS transistor M 12 as the FETs external to semiconductor integrated circuit 101 , the power supply is not limited thereto. Not only a MOS transistor but also an FET of any other type may be used. Further, power supply 201 may be formed to include two P-channel MOS transistors or two N-channel MOS transistors as the FETs external to semiconductor integrated circuit 101 .

Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the scope of the present invention being interpreted by the terms of the appended claims.