Optical head apparatus and optical information recording or reproducing apparatus

This application is a continuation-in-part of U.S. application Ser. No. 10/244,800 filed Sep. 16, 2002, now U.S. Pat. No. 6,980,505.

1. Field of the Invention

The present invention relates to an optical head apparatus and an optical information recording or reproducing apparatus for recording or reproducing information with respect to several types of optical recording mediums having different standards.

2. Description of Related Art

A recording density in an optical information recording or reproducing apparatus is inversely proportional to a square of a diameter of a condensed spot formed on an optical recording medium by an optical head apparatus. That is, the smaller the diameter of the condensed spot is, the higher the recording density becomes. The diameter of the light convergence spot is proportional to a wavelength of a light source in the optical head apparatus, and is inversely proportional to a numerical aperture of the objective lens. That is, when the wavelength of the light source is shorter, and the numerical aperture of the objective lens is greater, the diameter of the condensed spot is reduced. According to the Compact Disk (CD) standard having a capacity of 650 MB, the wavelength of the light source is about 780 nm and the numerical aperture of the objective lens is 0.45. According to the Digital Versatile Disk (DVD) standard having a capacity of 4.7 GB, the wavelength of the light source is about 660 nm and the numerical aperture of the objective lens is 0.6.

To further improve the recording density, hence, a next-generation standard has been proposed or practiced in recent years with a light source having a much shorter wavelength and with an objective lens having a much grater numerical aperture. For example, according to an Advanced optical Disk (AOD) standard for the capacity of 20 GB, the wavelength of the light source is about 400 nm and the numerical aperture of the objective lens is 0.65. According to a Blue Ray Disk (BRD) standard for the capacity of 23.3 GB, the wavelength of the light source is about 400 nm and the numerical aperture of the objective lens is 0.85.

From these backgrounds, there have been demands for an optical head apparatus and optical information recording or reproducing apparatus which have a good compatibility and are capable of recording or reproduction data on/from plural kinds of disks based on different standards. An optical head apparatus capable of recording or reproducing data on/from disks based on any of the DVD and CD standards has already been put to practical use. In addition, another optical head apparatus capable of recording or reproducing data on/from disks based on any of the next-generation standard, DVD and CD standards has been proposed.

An optical head apparatus described in JP-A-2001-43559 is an example of a conventional optical head apparatus capable of recording or reproducing data on/from disks based on any of the next-generation standard, DVD and CD standards. FIG. 83 schematically shows the structure of the optical head apparatus. Modules 311 a , 311 b , and 311 c each comprise a semiconductor laser, a photodetector, and a hologram optical element. The hologram optical element transmits part of light emitted from the semiconductor laser and guide the part of light to a disk. The element further diffracts reflection light from the disk, to guide the reflection light to the photodetector. The semiconductor lasers of the modules 311 a , 311 b , and 311 c have wavelengths of 780 nm, 660 nm, and 400 nm, respectively. A beam splitter 312 a transmits the light having wavelengths of 400 nm and 660 nm but reflects the light having the wavelength of 780 nm. Also, the beam splitter 312 b transmits the light having wavelength of 400 nm but reflects the light having the wavelength of 660 nm.

Light emitted from the semiconductor laser from the module 311 c passes through the beam splitters 312 a and 312 b and is reflected by a mirror 313 . The light is then converged onto the disk 315 based on the next-generation standard by the objective lens 314 . Reflection light from the disk 315 passes through the objective lens 314 in a reverse direction, and is reflected by the mirror 313 . This light then passes through the beam splitters 312 a and 312 b and is received by the photodetector in the module 311 c.

Light emitted from the semiconductor laser in the module 311 b is reflected by the beam splitter 312 b and passes through the beam splitter 312 a . This light is then reflected by the mirror 313 and is converged onto the disk 315 based on the DVD standard by the objective lens 314 . Reflection light from the disk 315 passes through the objective lens in a reverse direction, and is reflected by the mirror 313 . This light then passes through the beam splitter 312 a , is then reflected by the beam splitter 312 b , and is received by the photodetector in the module 311 b.

Light emitted from the semiconductor laser in the module 311 a is reflected by the beam splitter 312 a and reflected by the mirror 313 . The reflection light is converged onto the disk 315 based on the CD standard by the objective lens 314 . Reflection light form the disk 315 passes through the objective lens 314 in a reverse direction and is reflected by the mirror 313 . The reflection light is then reflected by the beam splitter 312 a and is received by the photodetector in the module 311 a.

On the other side, an example of a conventional optical head apparatus capable of recording or reproducing data on/from disks based on any of the DVD standard and CD standard is an optical head apparatus described in JP-A-2003-123305. FIG. 84 schematically shows the structure of this optical head apparatus. The wavelengths of semiconductor lasers 321 a and 321 b are 780 nm and 680 nm, respectively. A beam splitter 322 a transmits almost all of both of P-polarized and S-polarized components with respect to light having a wavelength of 660 nm. This beam splitter 322 a transmits about 25% of each of P-polarized and S-polarized components and reflects about 75% thereof, with respect to light having a wavelength of 780 nm. Another beam splitter 322 b transmits almost all of the P-polarized component with respect to light having a wavelength of 660 nm and reflects almost all of the S-polarized component thereof. This beam splitter 322 b transmits almost all of both of the P-polarized and S-polarized components, with respect to light having a wavelength of 780 nm.

Light emitted from the semiconductor laser 321 b enters as an S-polarized component into the beam splitter 322 b . Almost all of the light is reflected, passes through the beam splitter 332 a , and is reflected by a mirror 324 , and then is transformed from linearly polarized light into circularly polarized light by a wavelength plate 325 , and converged onto a disk 327 based on the DVD standard by an objective lens 326 . Reflection light from the disk 327 passes through the objective lens 326 in a reverse direction, and is transformed from the circularly polarized light into linearly polarized light which has a polarization direction at right angles to that of the linearly polarized light approaching in its way toward the disk, by the wavelength plate 325 . The linearly polarized light is reflected by the mirror 324 and almost all light passes through the beam splitter 322 a , then enters as a P-polarized component into the beam splitter 322 a . The beam splitter 322 a transmits almost all of light. Then a photodetector 323 receives the linearly polarized light.

Light emitted from the semiconductor laser 321 a enters as an S-polarized component into the beam splitter 322 a . About 75% of the light is reflected, is reflected by the mirror 324 , and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 325 , and the converged onto the disk 327 based on the CD standard by the objective lens 326 . Reflection light from the disk 327 passes through the objective lens 326 in a reverse direction, and is transformed from the circularly polarized light into linearly polarized light which has a polarization direction at right angles to that of the linearly polarized light approaching in its way toward the disk, by the wavelength plate 325 . The linearly polarized light is reflected by the mirror 324 and enters as a P-polarized component into the beam splitter 322 a . About 25% of the light transmits through the beam splitter 322 a . Almost all of the penetrating light passes through the beam splitter 322 b and is received by the photodetector 323 .

In the conventional optical head apparatus shown in FIG. 83 , all of the light having wavelengths of 400 nm, 660 nm, and 780 nm causes loss of the light amount when the light passes through a hologram optical element in a module, in the forward path of the light toward the disk, and when the light is diffracted by the hologram optical element, in the backward path of the light. Under a condition that the product of the penetration rate in the forward path and the diffraction efficiency in the backward path is maximized, the former rate is only 50% and the latter efficiency is only 40.5%. Loss of the light amount in the forward path causes a reduction in the light output during recording. Loss of the light amount in the backward path causes a reduction of the S/N ratio during reproducing. Disks of the next-generation standard have no margins for the light output during recording or the S/N ratio during reproducing Therefore, this is a serious problem. Similarly, disks of the DVD standard have no margins for the light output during recording or the S/N ratio during reproducing. This can also be a serious problem for the disks of the DVD standard. However, disks of the CD standard have margins for both the light output during recording or the S/N ratio during reproducing. Therefore, this cannot be a serious problem for the disks of the CD standard.

On the other aide, in the other conventional optical head apparatus shown in FIG. 84 , the light amount of light having a wavelength of 660 nm is not substantially lost when the light is reflected by the beam splitter 322 b or when the light passes through the beam splitter 322 a , in the forward path of light toward the disk. In the backward path of light, the light having the wavelength of 660 nm is not substantially lost when the light passes through the beam splitter 322 a or 322 b . Therefore, with respect to disks of the DVD standard, a high light output is obtained during recording and a high S/N ratio is obtained during reproducing. Light having a wavelength of 780 nm is reflected at a predetermined rate by the beam splitter 322 a in the forward path, substantially independently from the polarization state. In the backward path, the light having a wavelength of 780 nm passes through the beam splitters 322 a and 322 b at a predetermined rate, substantially independently from the polarization state. Therefore, with respect to disks of the CD standard, the birefringence of the disk varies, so that the light amount received by the photodetector does not substantially vary even when the polarization state of the reflection light from the disk varies.

In some kinds of optical system of the optical head apparatus, there is a case that the light amount received by the photodetector varies due to changes of the birefringence of the disk. If the light amount is too small, a sufficient S/N ratio cannot be obtained in a circuit in a rear stage. On the contrary, if the light amount is too great, the circuit in the rear stage is saturated. With respect to disks of the CD standard, the birefringence of the disk varies greatly and thereby causes a serious problem. In the conventional optical head apparatus shown in FIG. 84 , however, this problem has been solved. With respect to disks of the DVD standard, changes of the birefringence of the disk cannot be said to be sufficiently small and therefore can be a serious problem. With respect to disks of the next-generation standard, changes of the birefringence of the disk are small and therefore cannot be a serious problem. However, in the conventional optical head apparatus shown in FIG. 84 , recording or reproducing cannot be performed with respect to disks of the next-generation standard.

An object of the present invention is to solve the above-described problems in the conventional optical head apparatus, and to provide an optical head apparatus and an optical information recording or reproducing apparatus which is capable of: recording or reproducing data on/from any kind of optical recording medium that uses light having first to third wavelengths; achieving a high light output during recording and a high S/N ratio during reproducing with respect to at least one kind of optical recording medium including an optical recording medium using the light having the first wavelength, such as a disk according to a next-generation standard; and achieving such a light amount received by a photodetector that does not substantially vary even when birefringence of the disk varies, at least one kind of optical recording medium including an optical recording medium using the light having the third wavelength, such as a disk according to the CD standard.

According to the present invention, there is provided an optical head apparatus comprising: a first light source which emits light having a first wavelength; a second light source which emits light having a second wavelength; a third light source which emits light having a third wavelength; at least one photodetector which receives the light having the first wavelength, the light having the second wavelength, and the light having the third wavelength, which have been reflected by an optical recording medium; an objective lens provided, opposed to the optical recording medium; and a optical wave synthesizing/separating system which synthesizes/separates the light having the first, second, and third wavelengths and traveling toward the objective lens from the first, second, and third light sources, and the light having the first, second, and third wavelengths and traveling toward the photodetector from the objective lens, wherein (a) with respect to at least one light including the light having the first wavelength, among the light having the first, second, and third wavelengths, the optical wave synthesizing/separating system emits light, applied from the side of the first light source, to the side of the objective lens with a quantity of light larger than 50% of a quantity of incident light, and emits light, applied from the side of the objective lens to the side of the photodetector with a quantity of light larger than 50% of a quantity of incident light, and (b) with respect to at least one light including the light having the third wavelength, among the light having the first, second, and third wavelengths, the optical wave synthesizing/separating system emits light entering from the side of the objective lens to the side of the photodetector with a predetermined ratio substantially independent of a polarization state of the entering light.

Moreover, according to the present invention, there is provided an optical information recording or reproducing apparatus according to the present invention comprises: the optical head apparatus according to the present invention; a first circuit system which drives the first, second, and third light sources, a second circuit system which generates a reproduction signal and an error signal, from an output of the photodetector; and a third circuit system which drives the objective lens, based on the error signal.

In the optical head apparatus according to the present invention and the optical information recording or reproducing apparatus, light including the light having at least the first wavelength causes loss of only 50% or less when the light passes through an optical wave synthesizing/separating system in both of approaching and backward paths. Further, light having at least the third wavelength passes through the optical wave synthesizing/separating system at a predetermined ratio, substantially independent of the polarization state. Therefore, according to the present invention, it is possible to realize an optical head apparatus and an optical information recording or reproducing apparatus as follows. That is, recording and reproducing can be performed on any of disks according to the next-generation standard (AOD standard, BRD standard, or the like), DVD standard, and CD standard, by setting the first, second, and third wavelengths to 400 nm, 600 nm, and 780 nm, respectively. With respect to disks according to the next-generation standard, a high optical output can be obtained during recording and a high S/N ratio can be obtained during reproducing. With respect to disks according to the CD standard, the amount of light received by the photodetector does not substantially vary even when the birefringence of a disk varies.

As has been described above, the optical head apparatus and optical information recording or reproducing apparatus according to the present invention achieve the following advantages. That is, recording and reproducing can be performed on any of disks used with light having the first, second, and third wavelengths. With respect to disks used with light having the first wavelength (e.g., disks according to the AOD standard, BRD standard, or the like which defines use of light having a wavelength of 400 nm), a high optical output can be obtained during recording, and a high S/N ratio can be obtained during reproduction. With respect to disks used with light having the third wavelength (e.g., disks according to the CD standard which defines use of light having a wavelength of 780 nm), the amount of light received by the photodetector does not substantially vary even when birefringence of a disk varies. This is based on the grounds that the light having the first wavelength causes loss of only 50% or less in the amount of light when the light passes through the optical wave synthesizing/separating system in both the forward and backward paths, and that the light having the third wavelength passes through the optical wave synthesizing/separating system in the backward path, substantially independent of the polarization state.

In the accompanying drawings:

FIG. 1 is a diagram showing the first embodiment of the optical bead apparatus according to the present invention;

FIG. 2 is a diagram showing the second embodiment of the optical head apparatus according to the present invention;

FIG. 3 is a diagram showing the third embodiment of the optical head apparatus according to the present invention;

FIG. 4 is a diagram showing the fourth embodiment of the optical head apparatus according to the present invention;

FIG. 5 is a diagram showing the fifth embodiment of the optical head apparatus according to the present invention;

FIG. 6 is a diagram showing the sixth embodiment of the optical head apparatus according to the present invention;

FIG. 7 is a diagram showing the seventh embodiment of the optical head apparatus according to the present invention;

FIG. 8 is a diagram showing the eighth embodiment of the optical head apparatus according to the present invention;

FIG. 9 is a diagram showing the ninth embodiment of the optical head apparatus according to the present invention;

FIG. 10 is a diagram showing the tenth embodiment of the optical head apparatus according to the present invention;

FIG. 11 is a diagram showing the eleventh embodiment of the optical head apparatus according to the present invention;

FIG. 12 is a diagram showing the twelfth embodiment of the optical head apparatus according to the present invention;

FIG. 13 is a diagram showing the thirteenth embodiment of the optical head apparatus according to the present invention;

FIG. 14 is a diagram showing the fourteenth embodiment of the optical head apparatus according to the present invention;

FIG. 15 is a diagram showing the fifteenth embodiment of the optical head apparatus according to the present invention;

FIG. 16 is a diagram showing the sixteenth embodiment of the optical head apparatus according to the present invention;

FIG. 17 is a diagram showing the seventeenth embodiment of the optical head apparatus according to the present invention;

FIG. 18 is a diagram showing the eighteenth embodiment of the optical head apparatus according to the present invention;

FIG. 19 is a diagram showing the nineteenth embodiment of the optical head apparatus according to the present invention;

FIG. 20 is a diagram showing the twentieth embodiment of the optical head apparatus according to the present invention;

FIG. 21 is a diagram showing the twenty-first embodiment of the optical head apparatus according to the present invention;

FIG. 22 is a diagram showing the twenty-second embodiment of the optical head apparatus according to the present invention;

FIG. 23 is a diagram showing the twenty-third embodiment of the optical head apparatus according to the present invention;

FIG. 24 is a diagram showing the twenty-fourth embodiment of the optical head apparatus according to the present invention;

FIG. 25 is a diagram showing the twenty-fifth embodiment of the optical head apparatus according to the present invention;

FIG. 26 is a diagram showing the twenty-sixth embodiment of the optical head apparatus according to the present invention;

FIG. 27 is a diagram showing the twenty-seventh embodiment of the optical head apparatus according to the present invention;

FIG. 28 is a diagram showing the twenty-eighth embodiment of the optical head apparatus according to the present invention;

FIG. 29 is a diagram showing the twenty-ninth embodiment of the optical head apparatus according to the present invention;

FIG. 30 is a diagram showing the thirtieth embodiment of the optical head apparatus according to the present invention;

FIG. 31 is a diagram showing the thirty-first embodiment of the optical head apparatus according to the present invention;

FIG. 32 is a diagram showing the thirty-second embodiment of the optical head apparatus according to the present invention;

FIG. 33 is a diagram showing the thirty-third embodiment of the optical head apparatus according to the present invention;

FIG. 34 is a diagram showing the thirty-fourth embodiment of the optical head apparatus according to the present invention;

FIG. 35 is a diagram showing the thirty-fifth embodiment of the optical head apparatus according to the present invention;

FIG. 36 is a diagram showing the thirty-sixth embodiment of the optical head apparatus according to the present invention;

FIG. 37 is a diagram showing the thirty-seventh embodiment of the optical head apparatus according to the present invention;

FIG. 38 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 39 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 40 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 41 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 42 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 43 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 44 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 45 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 46 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 47 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 48 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 49 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 50 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 51 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 52 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 53 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 54 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 55 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 56 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 57 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 58 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 59 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 60 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 61 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 62 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 63 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 64 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 65 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 66 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 67 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 68 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 69 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 70 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 71 is a graph showing the wavelength dependence of the transmittance of a beam splitter used in the embodiments of the optical head apparatus according to the present invention;

FIG. 72 is a graph showing a semiconductor laser which is used in the embodiments of the optical head apparatus according to the present invention and integrates two semiconductor lasers;

FIG. 73 is a graph showing a semiconductor laser which is used in the embodiments of the optical head apparatus according to the present invention and integrates three semiconductor lasers;

FIG. 74 is a graph showing a semiconductor laser which is used in the embodiments of the optical head apparatus according to the present invention and integrates one semiconductor laser and one photodetector;

FIG. 75 is a graph showing a semiconductor laser which is used in the embodiments of the optical head apparatus according to the present invention and integrates two semiconductor lasers and one photodetector;

FIG. 76 is a graph showing a semiconductor laser which is used in the embodiments of the optical head apparatus according to the present invention and integrates three semiconductor lasers and one photodetector;

FIG. 77 is a diagram showing a constitution of an expander lens used in the embodiments of the optical head apparatus according to the present invention;

FIG. 78 is a diagram showing a constitution of a optical liquid crystal element used in the embodiments of the optical head apparatus according to the present invention, where FIG. 78A is a plan view and FIG. 78B is a side view;

FIG. 79 is a diagram showing a constitution of an aperture control element used in the embodiments of the optical head apparatus according to the present invention, where FIG. 78A is a plan view and FIG. 78B is a side view;

FIG. 80 is a graph showing the wavelength dependence of the transmittance of dielectric multilayered films in the aperture control element used in the embodiments of the optical head apparatus according to the present invention;

FIG. 81 is a diagram showing a pattern of a light receiving portion of a photodetector and layout of light spots in the photodetector, used in the embodiments of the present invention;

FIG. 82 is a diagram showing a constitution of an embodiment of an optical information recording or reproducing apparatus according to the present invention;

FIG. 83 is a diagram showing a constitution of a first example of a conventional optical head apparatus; and

FIG. 84 is a diagram showing a constitution of a second example of a conventional optical head apparatus.

Embodiments of the present invention will be described below with reference to the drawings.

A description will first be made of characteristics of a beam splitter and a wavelength plate which form part of a optical wave synthesizing/separating system used in an optical head apparatus of the present invention.

1. Characteristics of Beam Splitters

Characteristics of beam splitters used in the embodiments of the optical head apparatus of the present invention will be described first. The beam splitter is constructed in a structure in which two triangular prisms of glass are adhered to each other forming a cubic shape and a dielectric multilayered film is formed between the adhered surfaces. Alternatively, another structure may be considered in which a dielectric multilayered film is formed on a glass plate, etc. In case of using plural beam splitters, the plural splitters can be integrated with each other.

FIGS. 38 to 71 show respectively wavelength dependencies of the penetration efficiencies of beam splitters A to Y, and h, k, o, p, s, u, v, x, and y used in the embodiments of the optical head apparatus according to the present invention. In the figures, continuous and broken lines respectively indicate characteristics of the P-polarized component (the electric field component of a light wave parallel to the plane defined by incident light and reflection light) and S-polarized component (the electric field component of a light wave perpendicular to the plane defined by incident light and reflection light).

Each beam splitter has first to fourth wavelength ranges. In the first wavelength range, almost all of both the P-polarized component and S-polarized component is transmitted. In the second wavelength range in which the beam splitter serves really as a beam splitter, almost all of the P-polarized component is transmitted, and almost all of the S-polarized component is reflected. In the third wavelength range, almost all of both the P-polarized component and S-polarized component is reflected. In the fourth wavelength range in which the beam splitter serves as a non-polarization beam splitter, both of the P-polarized component and S-polarized component are transmitted and reflected, at predetermined rates. The dielectric multilayered film can be designed as follows. That is, the wavelength of 400 nm is included in any of the first to third wavelength ranges. The wavelength of 660 nm is included in any of the first to fourth wavelength ranges. The wavelength of 780 nm is included in any of the first, third, and fourth wavelength ranges.

The term of “almost all” used above means, for example, 90% or more. Also, the “predetermined rates” means, for example, a transmittance of 50% and a reflection rate of 50%. Alternatively, the transmittance and the reflection rate may respectively be 75% and 25% or 25% and 75%. The predetermined rates need not always be strictly uniform for both the P-polarized component and S-polarized component. For example, the transmittance and the reflection rate may respectively be 55% and 45% for the P-polarized component while the transmittance and the reflection rate may respectively be 45% and 55% for the S-polarized component. As long as the ratio between the transmittance and the reflection rate for the P-polarized component and S-polarized component falls within a range of 0.5 to 2, the light amount received by the photodetector is neither reduced half or more nor is increased twice or more even when the birefringence of a disk changes. Since a circuit in a rear stage can respond to changes within this range, no problem is caused by such changes in practical use.

(Beam Splitter A)

As shown in FIG. 38 , the beam splitter A reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and also transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter B)

As shown in FIG. 39 , the beam splitter B transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter C)

As shown in FIG. 40 , the beam splitter C transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, also transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter D)

As shown in FIG. 41 , the beam splitter D transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and also reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter E)

As shown in FIG. 42 , the beam splitter E reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter F)

As shown in FIG. 43 , the beam splitter F reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter G)

As shown in FIG. 44 , the beam splitter G transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component of the light having a wavelength of 400 nm, transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter H)

As shown in FIG. 45 , the beam splitter H transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component of the light having a wavelength of 660 nm, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter I)

As shown in FIG. 46 , the beam splitter I transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, also transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, transmits about 50% of both the S-polarized component and the P-polarized component of the light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter J)

As shown in FIG. 47 , the beam splitter J transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, also reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and reflects almost all of both the S-polarized component and P-polarized component of the light having a wavelength of 780 nm.

(Beam Splitter K)

As shown in FIG. 48 , the beam splitter K reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component thereof, and reflects almost all of both the S-polarized component and the P-polarized component of light having a wavelength of 780 nm.

(Beam Splitter L)

As shown in FIG. 49 , the beam splitter L reflects almost all of both the P-polarized component and the S-polarized component of light having a wavelength of 400 nm, reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter M)

As shown in FIG. 50 , the beam splitter M transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter N)

As shown in FIG. 51 , the beam splitter N transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter O)

As shown in FIG. 52 , the beam splitter O transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component thereof, and reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter P)

As shown in FIG. 53 , the beam splitter P reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component thereof, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam splitter Q)

As shown in FIG. 54 , the beam splitter Q transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter R)

As shown in FIG. 55 , the beam splitter R reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter S)

As shown in FIG. 56 , the beam splitter S transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component thereof, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter T)

As shown in FIG. 57 , the beam splitter T transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter U)

As shown in FIG. 58 , the beam splitter U transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component thereof, transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter V)

As shown in FIG. 59 , the beam splitter V reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component thereof, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter W)

As shown in FIG. 60 , the beam splitter W transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter X)

As shown in FIG. 61 , the beam splitter X transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component thereof, and reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter Y)

As shown in FIG. 62 , the beam splitter Y transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, transmits almost all of the P-polarized component of light having a wavelength of 660 nm, reflects almost all of the S-polarized component thereof, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter h)

As shown in FIG. 63 , the beam splitter h transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter k)

As shown in FIG. 64 , the beam splitter k reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, and reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter o)

As shown in FIG. 65 , the beam splitter o transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, and reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter p)

As shown in FIG. 66 , the beam splitter p reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter s)

As shown in FIG. 67 , the beam splitter s transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam Splitter u)

As shown in FIG. 68 , the beam splitter u transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, and transmits almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter v)

As shown in FIG. 69 , the beam splitter v reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 400 nm, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

(Beam splitter x)

As shown in FIG. 70 , the beam splitter x transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, and reflects almost all of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm.

(Beam Splitter y)

As shown in FIG. 71 , the beam splitter y transmits almost all of the P-polarized component of light having a wavelength of 400 nm, reflects almost all of the S-polarized component thereof, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 660 nm, reflects about 50% of both, transmits about 50% of both the P-polarized component and S-polarized component of light having a wavelength of 780 nm, and reflects about 50% of both.

Tables 1 and 2 show the characteristics of the beam splitters A to Y, h, k, o, p, s, u, v, x, and y described above.

2. Characteristics of the Wavelength Plate

Described next will be a wavelength plate (corresponding to the wavelength plate 202 shown in FIGS. 1 to 37 and 82 described later) used in the embodiments of the optical head apparatus according to the present invention. The wavelength plate used in the embodiments of the optical head apparatus according to the present invention is a quarter-wave plate covering a wide band corresponding to light having wavelengths of 400 nm, 660 nm, and 780 nm. A wide-band quarter-wave plate of this type is, for example, described in JP-A-H05 (1993)-100114.

In the embodiments of the optical head apparatus according to the present invention, a optical wave synthesizing/separating system is constructed by combining a polarizing beam splitter for light having a wavelength of 400 nm, a polarizing beam splitter or non-polarization beam splitter for light having a wavelength of 660 nm, at least one beam splitter including a non-polarization beam splitter for light having a wavelength of 780 nm, and a wavelength plate. The wavelength plate is provided at the closest position to an objective lens in the optical wave synthesizing/separating system.

Thus, with respect to the light having a wavelength of 400 nm, incident light onto the beam splitter has only one of P- and S-polarized components. With respect to light having a wavelength of 660 nm, incident light onto the beam splitter has only one of P- and S-polarized components in case of combining a polarizing beam splitter and a wavelength plate. In case where a beam splitter transmits both the P-polarized component and S-polarized component or reflects both, a phase difference occurs between the P-polarized component and S-polarized component which have been transmitted or reflected by the beam splitter. Therefore, if incident light onto a beam splitter has both the P-polarized component and S-polarized component, the state of polarization is disturbed when light is transmitted or reflected by the beam splitter, so that the optical wave synthesizing/separating system does not function properly. However, when the incident light onto the beam splitter contains only one of the P-polarized component and S-polarized component, the state of polarization is not disturbed when light is transmitted or reflected by the beam splitter, so that the optical wave synthesizing/separating system functions properly. Meanwhile, with respect to light having a wavelength of 780 nm, incident light onto the beam splitter has both the P-polarized component and S-polarized component if birefringence is effected by a disk. With respect to light having a wavelength of 660 nm in case of using a non-polarization beam splitter, incident light onto the beam splitter also has both the P-polarized component and S-polarized component if birefringence is effected by a disk. Therefore, if incident light onto the beam splitter has both the P-polarized component and S-polarized component, the state of polarization is disturbed when light is transmitted or reflected by the beam splitter. However, the characteristics of the optical wave synthesizing/separating system do not substantially depend on the state of polarization. The optical wave synthesizing/separating system hence functions properly even when the state of polarization is disturbed.

At this time, the efficiency at which light passes the optical wave synthesizing/separating system in both the forward path and the backward path can be raised to be higher than 50%, with respect to light having wavelengths of 400 nm and 660 nm, by combining the polarizing beam splitter and the wavelength plate. With respect to light having wavelengths of 660 nm and 780 nm, the efficiency at which light passes through the optical wave synthesizing/separating system in the backward path can be made substantially independent from the polarization state, by using the non-polarization beam splitter. Further, if birefringence is not effected by a disk, the polarization direction of light which has been reflected by the disk and returns to the light source is perpendicular to the polarization direction of light emitted from the light source, so that noise from the light source due to interference between the light of both polarization directions can be suppressed, by using a wavelength plate.

In the following, descriptions will be made of embodiments of the optical head apparatus according to the present invention using the optical wave synthesizing/separating system (e.g., beam splitters and a wavelength plate) having the characteristics as described above.

In the descriptions, the optical head apparatus capable of recording and reproducing data on disks according to any of the next generation standard (the AOD standard, BRD standard, or the like), DVD standard, and CD standard needs a light source of a wavelength of 400 nm for the next-generation standard, a light source of a wavelength of 660 nm for the DVD standard, a light source of a wavelength of 780 nm for the CD standard, a photodetector for the next-generation standard, a photodetector for the DVD standard, and a photodetector for the CD standard. That is, this kind of optical head apparatus needs three light sources and three photodetectors. To downsize this optical head apparatus, these devices should desirably be integrated or shared as much as possible. More specifically, there can be a method of integrating light sources and photodetectors as modules, a method of integrating plural light sources, or a method of sharing plural photodetectors. Each of the following embodiments will be described with reference to a case of using semiconductor lasers as light sources.

3. First to Fourth Embodiments

Type 1

Each of the first to fourth embodiments of the present invention has a form which has three light sources and two photodetectors.

First Embodiment

FIG. 1 shows the first embodiment of the optical head apparatus according to the present invention. Wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c are 780 nm, 660 nm, and 400 nm, respectively. The beam splitter D is used as a beam splitter 51 a . Any of the beam splitters K, O, and X is used as a beam splitter 51 b . Any of the beam splitters L, Q, W, S, V, and Y is used as the beam splitter 51 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 51 d.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 1 c enters, as S-polarized, into the beam splitter 51 d . Almost all of the light is reflected therefrom and passes through the beam splitter 51 a . This light is then reflected by a mirror 201 and transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that of the forward path. The light is then reflected by the mirror 201 , and almost all of the light passes through the beam splitter 51 a . The light further enters, as P-polarized, into the beam splitter 51 d . Almost all of the light passes through the beam splitter 51 d and is received by the photodetector 101 b.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 1 b enters, as P-polarized into the beam splitter 51 b . Almost all of the light passes through the beam splitter 51 b and is reflected by the beam splitter 51 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is then reflected by the beam splitter 51 a and enters, as S-polarized, into the beam splitter 51 b and is reflected therefrom. Almost all of the light enters into the beam splitter 51 c as S-polarized, is reflected therefrom, and is received by the photodetector 101 a.

About 50% of light having a wavelength of 780 nm and emitted from the semiconductor laser 1 a enters as P-polarized into and passes through the beam splitter 51 c . Almost all of the light is reflected by the beam splitter 51 b and by the beam splitter 51 a , and is also reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by the wavelength plate 202 , and is converged onto a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction, and is transformed from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 51 a and by the beam splitter 51 b , and enters as S-polarized into the beam splitter 51 c . About 50% of the light is reflected and is received by the photodetector 101 a.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter D is used as the beam splitter 51 a . Any of the beam splitters L, Q, and W is used as the beam splitter 51 b . Any of the beam splitters K, O, and X is used as the beam splitter 51 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 51 d.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 51 a . Any of the beam splitters J, M, and X is used as the beam splitter 51 b . Any of the beam splitters L, R, V, T, W, and Y is used as the beam splitter 51 c . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 51 d.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 51 a . Any of the beam splitters L, R, and v is used as the beam splitter 51 b . Any of the beam splitters J, M, and X is used as the beam splitter 51 c . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 51 d.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 51 a . Any of the beam splitters J, N, and W is used as the beam splitter 51 b . Any of the beam splitters K, P, V, U, X, and Y is used as the beam splitter 51 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 51 d.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 400 nm, 660 nm, and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 51 a . Any of the beam splitters K, P, and V is used as the beam splitter 51 b . Any of the beam splitters J, N, W, U, X, and Y is used as the beam splitter 51 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 51 d.

Further, the semiconductor laser 1 c can be replaced with a photodetector 101 b in the present embodiment. Also, in the present embodiment, any one of the semiconductor lasers 1 a and 1 b can be replaced with a photodetector 101 a.

In the present embodiment in which the semiconductor laser 1 a is replaced with the photodetector 101 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 1 b and then reflected by a disk 204 and then by the beam splitter 51 b , may be inserted between the beam splitters 51 b and 51 c , if necessary, in order that the light passes through the beam splitter 51 c.

In the present embodiment in which the semiconductor laser 1 b is replaced with the photodetector 101 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 1 a and has then passed through the beam splitter 51 c , may be inserted between the beam splitters 51 c and 51 b , if necessary, in order that the light is reflected by the beam splitter 51 b.

In the first embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 1 a , 1 b , and 1 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 1 a , 1 b , and 1 c can have a high heat radiation characteristic. Also, the total number of elements, i.e., the light sources and photodetectors is only five. Therefore, the optical head apparatus can be downsized. In addition, the photodetector 101 b can be defined to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 1 c , and the photodetector 101 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers 1 a and 1 b.

Second Embodiment

FIG. 2 shows the second embodiment of the optical head apparatus according to the present invention The wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c are 780 nm, 660 nm, and 400 nm, respectively. The beam splitter D is used as a beam splitter 52 a . Any of the beam splitters H, P, and U is used as a beam splitter 52 b . Any of the beam splitters I, R, T, S, V, and Y is used as the beam splitter 52 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 52 d.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 2 c enters, as S-polarized, into the beam splitter 52 d . Almost all of the light is reflected therefrom and passes through the beam splitter 52 a . This light is then reflected by a mirror 201 and transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that of the forward path. The light is then reflected by the mirror 201 , and almost all of the light passes through the beam splitter 52 a . The light further enters, as P-polarized, into the beam splitter 52 d . Almost all of the light passes through the beam splitter 52 d and is received by the photodetector 102 b.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 2 b enters, as S-polarized, into the beam splitter 52 b . Almost all of the light is reflected by the beam splitter 52 b and is further reflected by the beam splitter 52 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is then reflected by the beam splitter 52 a and enters, as P-polarized, into and passes through the beam splitter 52 b . Almost all of the light then enters, as P-polarized, into and passes through the beam splitter 52 c and is received by the photodetector 102 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 2 a enters, as S-polarized, into the beam splitter 52 c . About 50% of the light is reflected by the beam splitter 52 c . Almost all of the light then passes through the beam splitter 52 b and is then reflected by the beam splitter 52 a and by the mirror 201 . The light is further transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is then reflected by the beam splitter 52 a and passes through the beam splitter 52 b . The light then enters, as P-polarized, into the beam splitter 52 c . About 50% thereof passes through the beam splitter 52 c , and is received by the photodetector 102 a.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter D is used as the beam splitter 52 a . Any of the beam splitters I, R, and T is used as the beam splitter 52 b . Any of the beam splitters H, P, and U is used as the beam splitter 52 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 52 d.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 52 a . Any of the beam splitters G, N, and U is used as the beam splitter 52 b . Any of the beam splitters I, Q, S, T, W, and Y is used as the beam splitter 52 c . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 52 d.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 52 a . Any of the beam splitters I, Q, and S is used as the beam splitter 52 b . Any of the beam splitters G, N, and U is used as the beam splitter 52 c . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 52 d.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 52 a . Any of the beam splitters G, M, and T is used as the beam splitter 52 b . Any of the beam splitters H, O, S, U, X, and Y is used as the beam splitter 52 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 52 d.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 400 nm, 660 nm, and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 52 a . Any of the beam splitters H, O, and S is used as the beam splitter 52 b . Any of the beam splitters G, M, T, U, X, and Y is used as the beam splitter 52 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 52 d.

Further, the semiconductor laser 2 c can be replaced with a photodetector 102 b , in the present embodiment Also, in the present embodiment, any one of the semiconductor lasers 2 a and 2 b can be replaced with a photodetector 102 a.

In the present embodiment in which the semiconductor laser 2 a is replaced with the photodetector 102 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 2 b , reflected by a disk 204 and then passed through the beam splitter 52 b , may be inserted between the beam splitters 52 b and 52 c , if necessary, in order that the light is reflected by the beam splitter 52 c.

In the present embodiment in which the semiconductor laser 2 b is replaced with the photodetector 102 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 2 a and then reflected by the beam splitter 52 c , may be inserted between the beam splitters 52 c and 52 b , if necessary, in order that the light passes through the beam splitter 52 b.

In the second embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 2 a , 2 b , and 2 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 2 a , 2 b , and 2 c can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector 102 b can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 2 c , and the photodetector 102 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers 2 a and 2 b.

Third Embodiment

FIG. 3 shows the third embodiment of the optical head apparatus according to the present invention. The wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter A is used as a beam splitter 53 a . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as a beam splitter 53 b . Any of the beam splitters H, P, and U is used as the beam splitter 53 c . Any of the beam splitters I, R, T, S, V, and Y is used as the beam splitter 53 d.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 3 a enters, as P-polarized, into the beam splitter 53 b . Almost all of the light passes through the beam splitter 53 b and is reflected by the beam splitter 53 a . This light is then reflected by a mirror 201 and transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 , and almost all of the light passes through the beam splitter 53 a . The light further enters, as S-polarized, into the beam splitter 53 b . Almost all of the light is reflected therefrom and is received by the photodetector 103 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 3 b enters, as S-polarized, into the beam splitter 53 c . Almost all of the light is reflected by the beam splitter 53 c and further passes through the beam splitter 53 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light then passes through the beam splitter 53 a and enters, as P-polarized, into and passes through the beam splitter 53 c . Almost all of the light then enters, as P-polarized, into and passes through the beam splitter 53 d and is received by the photodetector 103 b.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 3 c enters, as S-polarized, into the beam splitter 53 d . About 50% of the light is reflected by the beam splitter 53 d . Almost all of the light then passes through the beam splitter 53 c and then the beam splitter 53 a , and is further reflected by the mirror 201 . The light is further transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light then passes through the beam splitter 53 a and the beam splitter 53 c . The light then enters, as P-polarized, into the beam splitter 53 d . About 50% thereof passes through the beam splitter 53 d , and is received by the photodetector 103 b.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 53 a . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 53 b . Any of the beam splitters I, R, and T is used as the beam splitter 53 c . Any of the beam splitters H, P, and U is used as the beam splitter 53 d.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 53 a . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 53 b . Any of the beam splitters G, N, and U is used as the beam splitter 53 c . Any of the beam splitters I, Q, S, T, W, and Y is used as the beam splitter 53 d.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 53 a . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 53 b . Any of the beam splitters I, Q, and S is used as the beam splitter 53 c . Any of the beam splitters G, N, and U is used as the beam splitter 53 d.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 53 a . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 53 b . Any of the beam splitters G, M, and T is used as the beam splitter 53 c . Any of the beam splitters H, O, S, U, X, and Y is used as the beam splitter 53 d.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 780 nm, 660 nm, and 400 mm, respectively. At this time, the beam splitter C is used as the beam splitter 53 a . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 53 b . Any of the beam splitters H, O, and S is used as the beam splitter 53 c . Any of the beam splitters G, M, T, U, X, and Y is used as the beam splitter 53 d.

Further, the semiconductor laser 3 a can be replaced with a photodetector 103 a , in the present embodiment. Also, in the present embodiment, any one of the semiconductor lasers 3 b and 3 c can be replaced with a photodetector 103 b.

In the present embodiment in which the semiconductor laser 3 c is replaced with the photodetector 103 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 3 c and then reflected by a disk 204 and then by the beam splitter 53 d , may be inserted between the beam splitters 53 d and 53 c , if necessary, in order that the light passes through the beam splitter 53 c.

In the present embodiment in which the semiconductor laser 3 c is replaced with the photodetector 103 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 3 b , then reflected by a disk 204 and passed through the beam splitter 53 c , may be inserted between the beam splitters 53 c and 53 d , if necessary, in order that the light is reflected by the beam splitter 53 d.

In the third embodiment of she optical head apparatus according to the present invention, the semiconductor lasers 3 a , 3 b , and 3 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 3 a , 3 b , and 3 c can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector 103 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 3 a , and the photodetector 103 b can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers 3 b and 3 c.

Fourth Embodiment

FIG. 4 shows the fourth embodiment of the optical head apparatus according to the present invention. The wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter A is used as a beam splitter 54 a . Any of the beam splitters G, J, N, N, T, U, W, X, and Y is used as a beam splitter 54 b . Any of the beam splitters K, O, and X is used as the beam splitter 54 c . Any of the beam splitters L, Q, W, S, V, and Y is used as the beam splitter 54 d.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 4 a enters, as P-polarized, into the beam splitter 54 b . Almost all of the light passes through the beam splitter 54 b and is reflected by the beam splitter 54 a . This light is then reflected by a mirror 201 and transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 , and almost all of the light is reflected by the beam splitter 54 a . The light further enters, as S-polarized, into the beam splitter 54 b . Almost all of the light is reflected therefrom and is received by the photodetector 104 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 4 b enters, as P-polarized, into the beam splitter 54 c . Almost all of the light passes through the beam splitter 54 c and passes through beam splitter 54 a . The light is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light then passes through the beam splitter 54 a and enters, as S-polarized, into the beam splitter 54 c and is reflected by the beam splitter 54 c . Almost all of the light then enters, as S-polarized, into and passes through the beam splitter 54 d and is reflected by the beam splitter 54 d . The light is then received by the photodetector 104 b.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 4 c enters, as P-polarized, into the beam splitter 54 d . About 50% of the light passes through the beam splitter 54 d . Almost all of the light is then reflected by the beam splitter 54 c and passes through the beam splitter 54 a , and is further reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light then passes through the beam splitter 54 a and is reflected by the beam splitter 54 c . The light then enters, as S-polarized, into the beam splitter 54 d . About 50% of the light is reflected therefrom, and is received by the photodetector 104 b.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 54 a . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 54 b . Any of the beam splitters L, Q, and W is used as the beam splitter 54 c . Any of the beam splitters K, O, and X is used as the beam splitter 54 d.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 54 a . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 54 b . Any of the beam splitters J, M, and X is used as the beam splitter 54 c . Any of the beam splitters L, R, V, T, W, and Y is used as the beam splitter 54 d.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 54 a . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 54 b . Any of the beam splitters L, R, and V is used as the beam splitter 54 c . Any of the beam splitters J, M, and X is used as the beam splitter 54 d.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 54 a . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 54 b . Any of the beam splitters J, N, and W is used as the beam splitter 54 c . Any of the beam splitters K, P, V, U, X, and Y is used as the beam splitter 54 d.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 h , and 4 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 54 a . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 54 b . Any of the beam splitters R, P, and V is used as the beam splitter 54 c . Any of the beam splitters J, N, W, U, X, and Y is used as the beam splitter 54 d.

Further, the semiconductor laser 4 a can be replaced with a photodetector 104 a , in the present embodiment. Also, in the present embodiment, any one of the semiconductor lasers 4 b and 4 c can be replaced with a photodetector 104 b.

In the present invention in which the semiconductor laser 4 b is replaced with the photodetector 104 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 4 c and has then passed through the beam splitter 54 d , may be inserted between the beam splitters 54 d and 54 c , if necessary, in order that the light is reflected by the beam splitter 54 c.

In the present embodiment in which the semiconductor laser 4 c is replaced with the photodetector 104 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 4 b , then reflected by a disk 204 and reflected by the beam splitter 54 c , may be inserted between the beam splitters 54 c and 54 d , if necessary, in order that the light passes through the beam splitter 54 d.

In the fourth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 4 a , 4 b , and 4 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 4 a , 4 b , and 4 c can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector 104 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 4 a , and the photodetector 104 b can be designed to have art optimal sensitivity or the like for the wavelengths of the semiconductor lasers 4 b and 4 c.

4. Fifth to Ninth Embodiments

Type 2

The fifth to ninth embodiments of the present invention each have three light sources and one photodetector.

Fifth Embodiment

FIG. 5 shows the fifth embodiment of the optical head apparatus according to the present invention. The wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter G is used as a beam splitter 55 a . Any of the beam splitters H and U is used as a beam splitter 55 b . Any of the beam splitters I, S, T, and Y is used as the beam splitter 55 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 5 a enters, as S-polarized, into the beam splitter 55 a . Almost all of the light is reflected therefrom and further reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 , and enters, as P-polarized, into the beam splitter 55 a . Almost all of the light passes through the beam splitter 55 a and enters, as P-polarized, into the beam splitter 55 b . Almost all of the light passes through the beam splitter 55 b and enters, as P-polarized, into the beam splitter 55 c . Almost all of the light passes through the beam splitter 55 c , and the light is then received by the photodetector 105 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 5 b enters, as S-polarized, into the beam splitter 55 b . Almost all of the light is reflected therefrom and passes through the beam splitter 55 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light then passes through the beam splitter 55 a and enters, as P-polarized, into the beam splitter 55 b . Almost all of the light passes through the beam splitter 55 b , and enters, as P-polarized, into the beam splitter 55 c . Almost all of the light passes through the beam splitter 55 c , and is received by the photodetector 105 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 5 c enters, as S-polarized, into the beam splitter 55 c . About 50% of the light is reflected therefrom. Almost all of the light then passes through the beam splitter 55 b and passes through the beam splitter 55 a . The light is further reflected by the mirror 201 , and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 55 a and also the beam splitter 55 b . The light then enters, as P-polarized, into the beam splitter 55 c . About 50% of the light passes through the beam splitter 55 c , and is received by the photodetector 105 a.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter G is used as the beam splitter 55 a . Any of the beam splitters I and T is used as the beam splitter 55 b . Any of the beam splitters H and U is used as the beam splitter 55 c.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter H is used as the beam splitter 55 a . Any of the beam splitters G and U is used as the beam splitter 55 b . Any of the beam splitters I, S, T, and Y is used as the beam splitter 55 c.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter H is used as the beam splitter 55 a . Any of the beam splitters I and S is used as the beam splitter 55 b . Any of the beam splitters G and U is used as the beam splitter 55 c.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter I is used as the beam splitter 55 a . The beam splitter G is used as the beam splitter 55 b . Any of the beam splitters H and U is used as the beam splitter 55 c.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter I is used as the beam splitter 55 a . The beam splitter H is used as the beam splitter 55 b . Any of the beam splitters G and U is used as the beam splitter 55 c.

Further, any of the semiconductor lasers 5 a , 5 b , and 5 c can be replaced with a photodetector 105 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 5 c is replaced with the photodetector 105 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 5 a and 5 b , reflected by the disk 204 , and has then passed through the beam splitter 55 b , may be inserted between the beam splitters 55 b and 55 c , if necessary, in order that the light is reflected by the beam splitter 55 c.

In the present embodiment in which the semiconductor laser 5 b is replaced with the photodetector 105 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 5 a , reflected by the disk 204 , and has then passed through the beam splitter 55 a , may be inserted between the beam splitters 55 a and 55 b , if necessary, in order that the light is reflected by the beam splitter 55 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 5 c and reflected by the beam splitter 55 c , may be inserted between the beam splitters 55 c and 55 b , if necessary, in order that the light passes through the beam splitter 55 b.

In the present embodiment in which the semiconductor laser 5 a is replaced with the photodetector 105 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 5 b and reflected by the beam splitter 55 b , may be inserted between the beam splitters 55 b and 55 a , if necessary, in order that the light passes through the beam splitter 55 a . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 5 c and reflected by the beam splitter 55 c , may be inserted between the beam splitters 55 c and 55 b , if necessary, in order that the light passes through the beam splitter 55 b.

In the fifth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 5 a , 5 b , and 5 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 5 a , 5 b , and 5 c can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only four. Therefore, the optical head apparatus can be downsized.

Sixth Embodiment

FIG. 6 shows the sixth embodiment of the optical head apparatus according to the present invention. The wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter J is used as a beam splitter 56 a . Any of the beam splitters K and X is used as a beam splitter 56 b . Any of the beam splitters L, V, W, and Y is used as the beam splitter 56 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 6 a enters, as P-polarized, into the beam splitter 56 a . Almost all of the light passes through the beam splitter 56 a and is further reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 , and enters, as S-polarized, into the beam splitter 56 a . Almost all of the light is reflected by the beam splitter 56 a and enters, as S-polarized, into the beam splitter 56 b . Almost all of the light is reflected by the beam splitter 56 b and enters, as S-polarized, into the beam splitter 56 c . Almost all of the light is reflected by the beam splitter 56 c , and is then received by the photodetector 106 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 6 b enters, as P-polarized, into the beam splitter 56 b . Almost all of the light passes through the beam splitter 56 b and is reflected by the beam splitter 56 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is then reflected by the beam splitter 56 a and enters, as S-polarized, into the beam splitter 56 b . Almost all of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 56 c . Almost all of the light is reflected therefrom and is received by the photodetector 106 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 6 c enters, as P-polarized, into the beam splitter 56 c . About 50% of the light passes through the beam splitter 56 c . Almost all of the light is then reflected by the beam splitter 56 b and by the beam splitter 56 a . The light is further reflected by the mirror 201 , and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 56 a and also by the beam splitter 56 b . The light then enters, as S-polarized, into the beam splitter 56 c . About 50% of the light is reflected therefrom and is received by the photodetector 106 a.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter a is used as the beam splitter 56 a . Any of the beam splitters L and W is used as the beam splitter 56 b . Any of the beam splitters K and X is used as the beam splitter 56 c.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter K is used as the beam splitter 56 a . Any of the beam splitters J and X is used as the beam splitter 56 b . Any of the beam splitters L, V, W, and Y is used as the beam splitter 56 c.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter K is used as the beam splitter 56 a . Any of the beam splitters L and V is used as the beam splitter 56 b . Any of the beam splitters J and X is used as the beam splitter 56 c.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter L is used as the beam splitter 56 a . The beam splitter J is used as the beam splitter 56 b . Any of the beam splitters K and X is used as the beam splitter 56 c.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter L is used as the beam splitter 56 a . The beam splitter K is used as the beam splitter 56 b . Any of the beam splitters J and X is used as the beam splitter 56 c.

Further, any of the semiconductor lasers 6 a , 6 b , and 6 c can be replaced with a photodetector 106 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 6 c is replaced with the photodetector 106 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 6 a and 6 b , reflected by the disk 204 , and then reflected by the beam splitter 5 b , may be inserted between the beam splitters 56 b and 56 c , if necessary, in order that the light passes through the beam splitter 56 c.

In the present embodiment in which the semiconductor laser 6 b is replaced with the photodetector 106 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 6 a , reflected by the disk 204 , and then reflected by the beam splitter 56 a , may be inserted between the beam splitters 56 a and 56 b , if necessary, in order that the light passes through the beam splitter 56 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 6 c and has passed through the beam splitter 56 c , may be inserted between the beam splitters 56 c and 56 b , if necessary, in order that the light is reflected by the beam splitter 56 b.

In the present embodiment in which the semiconductor laser 6 a is replaced with the photodetector 106 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 6 b and passed through the beam splitter 56 b , may be inserted between the beam splitters 56 b and 56 a , if necessary, in order that the light is reflected by the beam splitter 56 a . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 6 c and passed through the beam splitter 56 c , may be inserted between the beam splitters 56 c and 56 b , if necessary, in order that the light is reflected by the beam splitter 56 b.

In the sixth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 6 a , 6 b , and 6 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 6 a , 6 b , and 6 c can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only four Therefore, the optical head apparatus can be downsized.

Seventh Embodiment

FIG. 7 shows the seventh embodiment of the optical head apparatus according to the present invention. The wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter G is used as a beam splitter 57 a . Any of the beam splitters S and Y is used as a beam splitter 57 b . Any of the beam splitters C, E, M, K, O, and X is used as a beam splitter 57 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 7 a enters, as S-polarized, into the beam splitter 57 a . Almost all of the light is reflected therefrom and is further reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 , and enters, as P-polarized, into the beam splitter 57 a . Almost all of the light passes through the beam splitter 57 a and enters, as P-polarized, into the beam splitter 57 b . Almost all of the light passes through the beam splitter 57 b and is then received by the photodetector 107 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 7 b passes through the beam splitter 57 c and enters, as S-polarized, into the beam splitter 57 b . Almost all of the light is reflected therefrom, and passes through the beam splitter 57 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 57 a and enters, as P-polarized, into the beam splitter 57 b . Almost all of the light passes through the beam splitter 57 b , and is received by the photodetector 107 a.

In case of using any of the beam splitters K, O, and X as the beam splitter 57 c , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 7 b and passed through the beam splitter 57 c , may be inserted between the beam splitters 57 c and 57 b , in order that the light is reflected by the beam splitter 57 b.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 7 c enters, as S-polarized, into the beam splitter 57 c . Almost all of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 57 b . About 50% of the light is reflected therefrom. Almost all of the light then passes through the beam splitter 57 a and is reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 57 a and enters, as P-polarized, into the beam splitter 57 b . About 50% of the light passes there and is received by the photodetector 107 a.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter G is used as the beam splitter 57 a . Any of the beam splitters S and Y is used as the beam splitter 57 b . Any of the beam splitters B, F, N, H, P, and U is used as the beam splitter 57 c.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter H is used as the beam splitter 57 a . Any of the beam splatters T and Y is used as the bean splitter 57 b . Any of the beam splitters C, D, O, J, M, and X is used as the beam splitter 57 c.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter H is used as the beam splitter 57 a . Any of the beam splitters T and Y is used as the beat splitter 57 b . Any of the beam splitters A, F, P, X, N, and U is used as the beam splitter 57 c.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter I is used as the beam splitter 57 a . The beam splitter U is used as the beam splitter 57 b . Any of the beam splitters B, D, Q, H, O, S, J, N, W, U, X, and Y is used as the beam splitter 57 c.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter I is used as the beam splitter 57 a . The beam splitter U is used as the beam splitter 57 b . Any of the beam splitters A, E, R, G, M, T, K, P, V, U, X, and Y is used as the beam splitter 57 c.

Further, any of the semiconductor lasers 7 a , 7 b , and 7 c can be replaced with a photodetector 107 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 7 c is replaced with the photodetector 107 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 7 a , reflected by the disk 204 , and has then passed through the beam splitter 57 a , may be inserted between the beam splitters 57 a and 57 b , if necessary, in order that the light is reflected by the beam splitter 57 b.

In the present embodiment in which the semiconductor laser 7 b is replaced with the photodetector 107 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 7 a , reflected by the disk 204 , and has then passed through the beam splitter 57 a , may be inserted between the beam splitters 57 a and 57 b , if necessary, in order that the light is reflected by the beam splitter 57 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 7 a and 7 b , reflected by the disk 204 , and then reflected by the beam splitter 57 b , may be inserted between the beam splitters 57 b and 57 c , if necessary, in order that the light passes through the beam splitter 57 c.

In the present embodiment in which the semiconductor laser 7 a is replaced with the photodetector 107 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 7 b , and has passed through the beam splitter 57 c , may be inserted between the beam splitters 57 c and 57 b , if necessary, in order that the light is reflected by the beam splitter 57 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 7 b and 7 c and reflected by the beam splitter 57 b , may be inserted between the beam splatters 57 b and 57 a , if necessary, in order that the light passes through the beam splitter 57 a.

In the seventh embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 7 a , 7 b , and 7 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 7 a , 7 b , and 7 c can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only four. Therefore, the optical head apparatus can be downsized.

Eighth Embodiment

FIG. 8 shows the eighth embodiment of the optical head apparatus according to the present invention. The wavelengths of the semiconductor lasers 8 a , 8 b , and 8 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter J is used as a beam splitter 58 a . Any of the beam splitters V and Y is used as a beam splitter 58 b . Any of the beam splitters B, F, N, H, P, and U is used as a beam splitter 58 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 8 a enters, as P-polarized, into the beam splitter 58 a . Almost all of the light passes through the beam splitter 58 a and is further reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and it transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 , and enters, as S-polarized, into the beam splitter 58 a . Almost all of the light is reflected therefrom, and enters, as S-polarized, into the beam splitter 58 b . Almost all of the light is reflected therefrom, and is then received by the photodetector 108 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 8 b is reflected by the beam splitter 58 c and enters, as P-polarized, into the beam splitter 58 b . Almost all of the light passes through the beam splitter 58 b and is reflected by the beam splitter 58 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 58 a and enters, as S-polarized, into the beam splitter 58 b . Almost all of the light is reflected therefrom, and is received by the photodetector 108 a.

In case of using any of the beam splitters H, P, and U as the beam splitter 58 c , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 8 b and reflected by the beam splitter 58 c , may be inserted between the beam splitters 58 c and 58 b , in order that the light passes through the beam splitter 58 b.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 8 c enters, as P-polarized, into the beam splitter 58 c . Almost all of the light passes through the beam splitter 58 c and enters, as P-polarized, into the beam splitter 58 b . About 50% of the light passes through the beam splitter 58 b . Almost all of the light is then reflected by the beam splitter 58 a and is reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 58 a and enters, as S-polarized, into the beam splitter 58 b . About 50% of the light is reflected therefrom and is received by the photodetector 108 a.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b , and 8 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter J is used as the beam splitter 58 a . Any of the beam splitters V and Y is used as the beam splitter 58 b . Any of the beam splitters C, E, M, K, O, and X is used as the beam splitter 58 c.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b , and 8 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter K is used as the beam splitter 58 a . Any of the beam splitters W and Y is used as the beam splitter 58 b . Any of the beam splitters A, F, P, G, N, and U is used as the beam splitter 58 c.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b , and 8 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter K is used as the beam splitter 58 a . Any of the beam splitters W and Y is used as the beam splitter 58 b . Any of the beam splitters C, D, O, J, M, and X is used as the beam splitter 58 c.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b , and 8 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter L is used as the beam splitter 58 a . The beam splitter X is used as the beam splitter 58 b . Any of the beam splitters A, E, R, K, P, V, G, M, T, U, X and Y is used as the beam splitter 58 c.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b , and 8 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter L is used as the beam splitter 58 a . The beam splitter X is used as the beam splitter 58 b . Any of the beam splitters B, D, Q, J, N, W, H, O, S, U, X, and Y is used as the beam splitter 58 c.

Further, any of the semiconductor lasers 8 a , 8 b , and 8 c can be replaced with a photodetector 101 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 8 c is replaced with the photodetector 108 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 8 a , reflected by the disk 204 , and reflected by the beam splitter 58 a , may be inserted between the beam splitters 58 a and 58 b , if necessary, in order that the light passes through the beam splitter 58 b.

In the present embodiment in which the semiconductor laser 8 b is replaced with the photodetector 108 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 8 a , reflected by the disk 204 , and then reflected by the beam splitter 58 a , may be inserted between the beam splitters 58 a and 58 b , if necessary, in order that the light passes through the beam splitter 58 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 8 a and 8 b , reflected by the disk 204 , and has then passed through the beam splitter 58 b , may be inserted between the beam splitters 58 b and 58 c , if necessary, in order that the light is reflected by the beam splitter 58 c.

In the present embodiment in which the semiconductor laser 8 a is replaced with the photodetector 108 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 8 b and reflected by the beam splitter 58 c , may be inserted between the beam splitters 58 c and 58 b , if necessary, in order that the light passes through the beam splitter 58 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 8 b and 8 c and has passed through the beam splitter 58 b , may be inserted between the beam splitters 58 b and 58 a , if necessary, in order that the light is reflected by the beam splitter 58 a.

In the eighth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 8 a , 8 b , and 8 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 8 a , 8 b , and 8 c can have a high neat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only four. Therefore, the optical head apparatus can be downsized.

Ninth Embodiment

FIG. 9 shows the ninth embodiment of the optical head apparatus according to the present invention. The wavelengths of the semiconductor lasers 9 a , 9 b , and 9 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter U is used as a beam splitter 59 a . Any of the beam splitters A, E, R, G, M, T, K, P, V, U, X, and Y is used as a beam splitter 59 b . Any of the beam splitters I, S, T and Y is used as a beam splitter 59 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 9 a enters, as S-polarized, into the beam splitter 59 b . Almost all of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 59 a . Almost all of the light is reflected therefrom and is further reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 , and enters, as P-polarized, into the beam splitter 59 a . Almost all of the light passes through the beam splitter 59 a and enters, as P-polarized, into the beam splitter 59 c . Almost all of the light passes through the beam splitter 59 c , and is then received by the photodetector 109 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 9 b passes through the beam splitter 59 b and enters, as S-polarized, into the beam splitter 59 a . Almost all of the light is reflected therefrom and is further reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 and enters, as P-polarized, into the beam splitter 59 a . Almost all of the light passes through the beam splitter 59 a and enters, as P-polarized, into the beam splitter 59 c . Almost all of the light passes through the beam splitter 59 c , and is received by the photodetector 109 a.

In case of using any of the beam splitters K, P, V, U, X, and Y as the beam splitter 59 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 9 b and has passed through the beam splitter 59 b , may be inserted between the beam splitters 59 b and 59 a , in order that the light is reflected by the beam splitter 59 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 9 c enters, as S-polarized, into the beam splitter 59 c . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 59 a and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 59 a and enters, as P-polarized, into the beam splitter 59 c . About 50% of the light passes there, and is received by the photodetector 109 a.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b , and 9 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter T is used as the beam splitter 59 a . Any of the beam splitters A, F, P, G, N, and U is used as the beam splitter 59 b . Any of the beam splitters H and U is used as the beam splitter 59 c.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b , and 9 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter U is used as the beam splitter 59 a . Any of the beam splitters B, D, Q, H, O, S, J, N, W, U, X, and Y is used as the beam splitter 59 b . Any of the beam splitters I, S, T, and Y is used as the beam splitter 59 c.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b , and 9 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter S is used as the beam splitter 59 a . Any of the beam splitters B, F, N, H, P, and U is used as the beam splitter 59 b . Any of the beam splitters G and U is used as the beam splitter 59 c.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b , and 9 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter T is used as the beam splitter 59 a . Any of the beam splitters C, D, O, J, M, and X is used as the beam splitter 59 b . Any of the beam splitters H and U is used as the beam splitter 59 c.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b , and 9 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter S is used as the beam splitter 59 a . Any of the beam splitters C, E, M, K, O, and X is used as the beam splitter 59 b . Any of the beam splatters G and U is used as the beam splitter 59 c.

Further, any of the semiconductor lasers 9 a , 9 b , and 9 c can be replaced with a photodetector 109 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 9 a is replaced with the photodetector 109 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 9 c and reflected by the beam splitter 59 c , may be inserted between the beam splitters 59 c and 59 a , if necessary, in order that the light passes through the beam splitter 59 a.

In the present embodiment in which the semiconductor laser 9 b is replaced with the photodetector 109 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 9 c and reflected by the beam splitter 59 c , may be inserted between the beam splitters 59 c and 59 a , if necessary, in order that the light passes through the beam splitter 59 a . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 9 b and 9 c , reflected by the disk 204 , and then reflected by the beam splitter 59 a , may be inserted between the beam splitters 59 a and 59 b , if necessary, in order that the light passes through the beam splitter 59 b.

In the present embodiment in which the semiconductor laser 9 c is replaced with the photodetector 109 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 9 b and has passed through the beam splitter 59 b , may be inserted between the beam splitters 59 b and 59 a , if necessary, in order that the light is reflected by the beam splitter 59 a . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 9 a and 9 b , reflected by the disk 204 , and has passed through the beam splitter 59 a , may be inserted between the beam splitters 59 a and 59 c , if necessary, in order that the light is reflected by the beam splitter 59 c.

In the ninth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 9 a , 9 b , and 9 c are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 9 a , 9 b , and 9 c can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only four. Therefore, the optical head apparatus can be downsized.

5. Tenth Embodiment

Type 3

The tenth embodiment of the optical head apparatus according to the present invention has two light sources and two photodetectors. However, one of the two light sources is constructed by integrating two light sources.

FIG. 10 shows the tenth embodiment of the optical head apparatus according to the present invention. The semiconductor laser 10 b is a semiconductor laser which integrates two semiconductor lasers. The structure of the laser will be described later with reference to FIG. 72 . The wavelength of the semiconductor laser 10 a is 400 nm, and the semiconductor laser 10 b has wavelengths of 660 nm and 780 nm. The beam splitter A is used as a beam splitter 60 a . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as a beam splitter 60 b . Any of the beam splitters S, V, and Y is used as a beam splitter 60 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 10 a enters, as P-polarized, into the beam splitter 60 b . Almost all of the light passes through the beam splitter 60 b and is then reflected by the beam splitter 60 a . The light is further reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 60 a , and enters, as S-polarized, into the beam splitter 60 b . The light is then received by the photodetector 110 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 10 b enters, as S-polarized, into the beam splitter 60 c . Almost all of the light is reflected therefrom and passes through the beam splitter 60 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 60 a and enters, as P-polarized, into the beam splitter 60 c . Almost all of the light passes there and is received by the photodetector 110 b.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 10 b enters, as S-polarized, into the beam splitter 60 c . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 60 a and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 60 a and enters, as P-polarized, into the beam splitter 60 c . About 50% of the light passes there, and is received by the photodetector 110 b.

In the present embodiment, the wavelength of the semiconductor laser 10 a may be 660 nm and the wavelengths of the semiconductor laser 10 b may be 400 nm and 780 nm. At this time, the beam splitter B is used as the beam splitter 60 a . Any of the beam splitters H, K, O, P, S, U, V, x and Y is used as the beam splitter 60 b . Any of the beam splitters T, W, and Y is used as the beam splitter 60 c.

In the present embodiment, the wavelength of the semiconductor laser 10 a may be 780 nm and the wavelengths of the semiconductor laser 10 b may be 400 nm and 660 nm. At this time, the beam splitter C is used as the beam splitter 60 a . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 60 b . Any of the beam splitters U, X, and Y is used as the beam splitter 60 c.

Further, the semiconductor laser 10 a can be replaced with a photodetector 110 a , in the present embodiment. Also, the semiconductor laser 10 b can be replaced with a photodetector 10 b , in the present embodiment.

In the tenth embodiment of the optical head apparatus according to the present invention, the semiconductor laser 10 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor laser 10 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetector 110 a can be designed to have a sensitivity or the like which is optimal for the wavelength of the semiconductor laser 10 a . The photodetector 110 b can be designed to have a sensitivity or the like which is optimal for the wavelengths of the semiconductor laser 10 b.

6. Eleventh and Twelfth Embodiments

Type 4

Each of the eleventh and twelfth embodiments of the optical head apparatus according to the present invention has two light sources and one photodetector. However, one of the two light sources is constructed by integrating two light sources.

Eleventh Embodiment

FIG. 11 shows the eleventh embodiment of the optical head apparatus according to the present invention. The semiconductor laser 11 b is a semiconductor laser which integrates two semiconductor lasers. The structure of the laser will be described later with reference to FIG. 72 the wavelength of the semiconductor laser 11 a is 400 nm, and the semiconductor laser 11 b has wavelengths of 660 nm and 780 nm. The beam splitter G is used as a beam splitter 61 a . Any of the beam splitters S and Y is used as a beam splitter 61 b.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 11 a enters, as S-polarized, into the beam splitter 61 a . Almost all of the light is reflected therefrom and is then reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularity polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 and enters, as P-polarized, into the beam splitter 61 a . Almost all of the light passes through the beam splitter 61 a , and enters, as P-polarized, into the beam splitter 61 b . Almost all of the light passes through the beam splitter 61 b and is then received by the photodetector 111 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 11 b enters, as S-polarized, into the beam splitter 61 b . Almost all of the light is reflected therefrom and passes through the beam splitter 61 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 61 a and enters, as P-polarized, into the beam splatter 61 b . Almost all of the light passes through the beam splitter 61 b and is received by the photodetector 111 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 11 b enters, as S-polarized, into the beam splitter 61 b . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 61 a and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 61 a and enters, as P-polarized, into the beam splitter 61 b . About 50% of the light passes through the beam splitter 61 b , and is received by the photodetector 111 a.

In the present embodiment, the wavelength of the semiconductor laser 11 a may be 660 nm and the wavelengths of the semiconductor laser 11 b may be 400 nm and 780 nm. At this time, the beam splitter H is used as the beam splitter 61 a . Any of the beam splitters T and Y is used as the beam splitter 61 b . In the present embodiment, the wavelength of the semiconductor laser 11 a may be 780 nm and the wavelengths of the semiconductor laser 11 b may be 400 nm and 660 nm. At this time, the beam splitter I is used as the beam splitter 61 a . The beam splitter U is used as the beam splitter 61 b.

Further, one of the semiconductor lasers 11 a and 11 b can be replaced with a photodetector 111 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 11 b is replaced with the photodetector 111 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 11 a , reflected by the disk 204 , and has passed through the beam splitter 61 a , may be inserted between the beam splitters 61 a and 61 b , if necessary, in order that the light is reflected by the beam splitter 61 b.

In the present embodiment in which the semiconductor laser 11 a is replaced with the photodetector 111 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 11 b and reflected by the beam splitter 61 b , may be inserted between the beam splitters 61 b and 61 a , if necessary, in order that the light passes through the beam splitter 61 a.

In the present embodiment, the semiconductor laser 11 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 11 a may be 660 nm and 780 nm, and the wavelength of the semiconductor laser 11 b may be 400 nm. At this time, the beam splitter S is used as the beam splitter 61 a . Any of the beam splitters G end U is used as the beam splitter 61 b.

In the present embodiment, the semiconductor laser 11 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 11 a may be 400 nm and 780 nm, and the wavelength of the semiconductor laser 11 b may be 660 nm. At this time, the beam splitter T is used as the beam splitter 61 a . Any of the beam splitters H and U is used as the beam splitter 61 b.

In the present embodiment, the semiconductor laser 11 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 11 a may be 400 nm and 660 nm, and the wavelength of the semiconductor laser 11 b may be 780 nm. At this time, the beam splitter U is used as the beam splitter 61 a . Any of the beam splitters I, S, T, and Y is used as the beam splitter 61 b.

Further, the semiconductor laser 11 a may be a semiconductor laser integrating two semiconductor lasers, and one of the semiconductor lasers 11 a and 11 b may be replaced with the photodetector 111 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 11 b is replaced with the photodetector 111 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 11 b , reflected by the disk 204 , and has passed through the beam splitter 61 a , may be inserted between the beam splitters 61 a and 61 b , if necessary, in order that the light is reflected by the beam splitter 61 b.

In the present embodiment in which the semiconductor laser 11 a is replaced with the photodetector 111 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 11 b and reflected by the beam splitter 61 b , may be inserted between the beam splitters 61 b and 61 a , if necessary, in order that the light passes through the beam splitter 61 a.

In the eleventh embodiment of the optical head apparatus according to the present invention, the semiconductor laser 11 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor laser 11 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only three. Therefore, the optical head apparatus can be downsized.

Twelfth Embodiment

FIG. 12 shows the twelfth embodiment of the optical head apparatus according to the present invention. The semiconductor laser 12 b is a semiconductor laser which integrates two semiconductor lasers. The structure of the laser will be described later with reference to FIG. 72 . The wavelength of the semiconductor laser 12 a is 400 nm, and the semiconductor laser 12 b has wavelengths of 660 nm and 780 nm. The beam splitter J is used as a beam splitter 62 a . Any of the beam splitters V and Y is used as a beam splitter 62 b.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 12 a enters, as P-polarized, into the beam splitter 62 a . Almost all of the light passes through the beam splitter 62 a and is then reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 and enters, as S-polarized, into the beam splitter 62 a . Almost all of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 62 b . Almost all of the light is reflected therefrom and is then received by the photodetector 112 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 12 b enters, as P-polarized, into the beam splitter 62 b . Almost all of the light passes through the beam splitter 62 b and is reflected by the beam splitter 62 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 62 a and enters, as S-polarized, into the beam splitter 62 b . Almost all of the light is reflected therefrom and is received by the photodetector 112 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 12 b enters, as P-polarized, into the beam splitter 62 b . About 50% of the light passes through the beam splitter 62 b . Almost all of the light is reflected by the beam splitter 62 a and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 62 a and enters, as S-polarized, into the beam splitter 62 b . About 50% of the light is reflected therefrom, and is received by the photodetector 112 a.

In the present embodiment, the wavelength of the semiconductor laser 12 a may be 660 nm, and the wavelengths of the semiconductor laser 12 b may be 400 nm and 780 nm. At this time, the beam splitter K is used as the beam splitter 62 a . Any of the beam splitters W and Y is used as the beam splitter 62 b.

In the present embodiment, the wavelength of the semiconductor laser 12 a may be 780 nm, and the wavelengths of the semiconductor laser 12 b may be 400 nm and 660 nm. At this time, the beam splitter L is used as the beam splitter 62 a . The beam splitter X is used as the beam splitter 62 b.

Further, one of the semiconductor lasers 12 a and 12 b can be replaced with a photodetector 112 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 12 b is replaced with the photodetector 112 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 12 a , reflected by the disk 204 , and reflected by the beam splitter 62 a , may be inserted between the beam splitters 62 a and 62 b , if necessary, in order that the light passes through the beam splitter 62 b.

In the present embodiment in which the semiconductor laser 12 a is replaced with the photodetector 112 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 12 b and has passed through the beam splitter 62 b , may be inserted between the beam splitters 62 b and 62 a , if necessary, in order that the light is reflected by the beam splitter 62 a.

In the present embodiment, the semiconductor laser 12 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 12 a may be 660 nm and 780 nm, and the wavelength of the semiconductor laser 12 b may be 400 nm. At this time, the beam splitter V is used as the beam splitter 62 a . Any of the beam splitters J and X is used as the beam splitter 62 b.

In the present embodiment, the semiconductor laser 12 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 12 a may be 400 nm and 780 nm, and the wavelength of the semiconductor laser 12 b may be 660 nm. At this time, the beam splitter W is used as the beam splitter 62 a . Any of the beam splitters K and X is used as the beam splitter 62 b.

In the present embodiment, the semiconductor laser 12 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 12 a may be 400 nm and 660 nm, and the wavelength of the semiconductor laser 12 b may be 780 nm. At this time, the beam splitter X is used as the beam splitter 62 a . Any of the beam splitters L, V, W, and Y is used as the beam splitter 62 b.

Further, the semiconductor laser 12 a may be a semiconductor laser integrating two semiconductor lasers, and one of the semiconductor lasers 12 a and 12 b may be replaced with the photodetector 112 a , in the present embodiment.

In the present embodiment in which the semiconductor laser 12 b is replaced with the photodetector 112 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 12 a , reflected by the disk 204 , and reflected by the beam splitter 62 a , may be inserted between the beam splitters 62 a and 62 b , if necessary, in order that the light passes through the beam splitter 62 b.

In the present embodiment in which the semiconductor laser 12 a is replaced with the photodetector 112 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 12 b and passed through the beam splitter 62 b , may be inserted between the beam splitters 62 b and 62 a , if necessary, in order that the light is reflected by the beam splitter 62 a.

In the twelfth embodiment of the optical head apparatus according to the present invention, the semiconductor laser 12 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor laser 12 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the light sources and photodetectors is only three. Therefore, the optical head apparatus can be downsized.

7. Thirteenth Embodiment

Type 5

The thirteenth embodiment of the optical head apparatus according to the present invention has one light source and one photodetector. However, the one light source integrates three light sources.

FIG. 13 shows the thirteenth embodiment of the optical head apparatus according to the prevent invention. The semiconductor laser 13 a is a semiconductor laser which integrates three semiconductor lasers. The structure of the laser will be described later with reference to FIG. 73 . The wavelengths of the semiconductor laser 13 a are 400 nm, 660 nm, and 780 nm. The beam splitter Y is used as a beam splitter 63 a.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 13 a enters, as S-polarized, into the beam splitter 63 a . Almost all of the light is reflected therefrom and is then reflected by the mirror 201 . This light is transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 and enters, as P-polarized, into the beam splitter 63 a . Almost all of the light passes through the beam splitter 63 a and is then received by the photodetector 113 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 13 a enters, as S-polarized, into the beam splitter 63 a . Almost all of the light is reflected therefrom. The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light front the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 and enters, as P-polarized, into the beam splitter 63 a . Almost all of the light passes through the beam splitter 63 a and is received by the photodetector 113 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 13 a enters, as S-polarized, into the beam splitter 63 a . About 50% of the light is reflected therefrom. The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . The light enters, as P-polarized, into the beam splitter 63 a . About 50% of the light passes there, and is received by the photodetector 113 a.

In the thirteenth embodiment of the optical head apparatus according to the present invention, the total number of elements, i.e., the light source and photodetector is only two. Therefore, the optical head apparatus can be downsized.

8. Fourteenth to Nineteenth Embodiments

Type 6

The fourteenth to nineteenth embodiments of the optical head apparatus according to the present invention each have two light sources, two photodetectors, and one module. However, one module integrates one light source and one photodetector.

Fourteenth Embodiment

FIG. 14 shows the fourteenth embodiment of the optical head apparatus according to the present invention. The module 164 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 164 a is 400 nm. The wavelengths of the semiconductor lasers 14 a and 14 b are 660 nm and 780 nm, respectively. The beam splitter A is used as a beam splitter 64 a . Any of the beam splitters B, F, and N is used as a beam splitter 64 b . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as a beam splitter 64 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as a beam splitter 64 d.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser integrated in the module 164 a is reflected by the beam splitter 64 a and then reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 64 a , and is then received by the photodetector integrated in the module 164 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 14 a enters, as P-polarized, into the beam splitter 64 c . Almost all of the light passes there and is reflected by the beam splitter 64 b . Almost all of the light further passes through the beam splitter 64 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 64 a and is reflected by the beam splitter 64 b . The light then enters, as S-polarized, into the beam splitter 64 c . Almost all of the light is reflected therefrom and is received by the photodetector 114 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 14 b enters, as S-polarized, into the beam splitter 64 d . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitters 64 b and 64 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected, by the mirror 201 . Almost all of the light passes through the beam splitters 64 a and 64 b , and enters, as P-polarized, into the beam splitter 64 d . About 50% of the light passes through the beam splitter 64 d , and is received by the photodetector 114 b.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 400 nm and the wavelengths of the semiconductor lasers 14 a and 14 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 64 a . Any of the beam splitters C, E, and M is used as the beam splitter 64 b . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 64 c . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 64 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 660 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 64 a . Any of the beam splitters A, F, and P is used as the beam splitter 64 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 64 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 64 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 660 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 64 a . Any of the beam splitters C, D, and O is used as the beam splitter 64 b . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 64 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 64 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 780 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 64 a . Any of the beam splitters A, E, and R is used as the beam splitter 64 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 64 c . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 64 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 780 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 64 a . Any of the beam splitters B, D, and Q is used as the beam splitter 64 b . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 64 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 64 d.

Further, the semiconductor laser 14 a can be replaced with a photodetector 114 a , in the present embodiment. Also, in the present embodiment, the semiconductor laser 14 b can be replaced with a photodetector 114 b.

In the fourteenth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 14 a and 14 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 14 a and 14 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 164 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 164 a , and the photodetectors 114 a and 114 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers 14 a and 14 b.

Fifteenth Embodiment

FIG. 15 shows the fifteenth embodiment of the optical head apparatus according to the present invention. The module 165 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 165 a is 400 nm. The wavelengths of the semiconductor lasers 15 a and 15 b are 660 nm and 780 nm, respectively. The beam splitter D is used as a beam splitter 65 a . Any of the beam splitters C, E, and M is used as a beam splitter 65 b . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as a beam splitter 65 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as a beam splitter 65 d.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser integrated in the module 165 a passes through the beam splitter 65 a and is then reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 65 a , and is then received by the photodetector integrated in the module 165 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 15 a enters, as S-polarized, into the beam splitter 65 c . Almost all of the light is reflected therefrom and passes through the beam splitter 65 b . Almost all of the light is then reflected by the beam splitter 65 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 65 a and passes through the beam splitter 65 b The light then enters, as P-polarized, into the beam splitter 65 c . Almost all of the light passes through the beam splitter 65 c and is received by the photodetector 115 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 15 b enters, as P-polarized, into the beam splitter 65 a . About 50% of the light passes there. Almost all of the light is reflected by the beam splitters 65 b and 65 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitters 65 a and 65 b , and enters, as P-polarized, into the beam splitter 65 d . About 50% of the light passes through the beam splitter 65 d , and is received by the photodetector 115 b.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 400 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter D is used as the beam splitter 65 a . Any of the beam splitters B, F, and N is used as the beam splitter 65 b . Any of the beam splitters I, L, O, R, S, T, V, W, and Y is used as the beam splitter 65 c . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 65 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 660 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter E is used as the beam splitter 65 a . Any of the beam splitters C, D, and O is used as the beam splitter 65 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 65 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 65 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 660 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter E is used as the beam splitter 65 a . Any of the beam splitters A, F, and P is used as the beam splitter 65 b . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 65 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 65 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 780 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter F is used as the beam splitter 65 a . Any of the beam splitters B, D, and Q is used as the beam splitter 65 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 65 c . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 65 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 780 nm and the wavelengths of the semiconductor lasers 15 a and 15 b may respectively be 660 nm and 400 nm. At this time, the beam splitter F is used as the beam splitter 65 a . Any of the beam splitters A, E, and R is used as the beam splitter 65 b . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 65 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 65 d.

Further, the semiconductor laser 15 a can be replaced with a photodetector 115 a in the present embodiment. Also, in the present embodiment, the semiconductor laser 15 b can be replaced with a photodetector 115 b.

In the fifteenth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 15 a and 15 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 15 a and 15 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 165 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 165 a , and the photodetectors 115 a and 115 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers 15 a and 15 b.

Sixteenth Embodiment

FIG. 16 shows the sixteenth embodiment of the optical head apparatus according to the present invention. The module 166 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 166 a is 780 nm. The wavelengths of the semiconductor lasers 16 a and 16 b are 660 nm and 400 nm, respectively. The beam splitter D is used as a beam splitter 66 a . Any of the beam splitters K, O, and X is used as a beam splitter 66 b . Any of the beam splitters B, F, N, H, P, and U is used as a beam splitter 66 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as a beam splitter 66 d.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 16 b enters, as S-polarized, into the beam splitter 66 d . Almost all of the light is reflected therefrom and passes through the beam splitter 66 a . The light is reflected by the mirror 201 and is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 66 a , and enters, as P-polarized, into the beam splitter 66 d . Almost all of the light passes through the beam splitter 66 d and is then received by the photodetector 116 b.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 16 a enters, as P-polarized, into the beam splitter 66 b . Almost all of the light passes through the beam splitter 66 b and is then reflected by the beam splitter 66 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 66 a and enters, as S-polarized, into the beam splitter 66 b . Almost all of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 66 c . Almost all of the light is reflected therefrom and is received by the photodetector 116 a.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser integrated in the module 166 a passes through the beam splitter 66 c and is reflected by the beam splitter 66 b . Almost all of the light is then reflected by the beam splitter 66 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitters 66 a and 66 b and passes through the beam splitter 66 c . The light is then received by the photodetector integrated in the module 166 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 660 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter D is used as the beam splitter 66 a . Any of the beam splitters L, Q, and W is used as the beam splitter 66 b . Any of the beam splitters C, E, and M is used as the beam splitter 66 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 66 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 780 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 66 a . Any of the beam splitters J, M, and X is used as the beam splitter 66 b . Any of the beam splitters A, F, P, G, N, and U is used as the beam splitter 66 c . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 66 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 400 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter B is used as the beam splitter 66 a . Any of the beam splitters L, R, and V is used as the beam splitter 66 b . Any of the beam splitters C, D, and O is used as the beam splitter 66 c . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 66 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 660 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 66 a . Any of the beam splitters J, N, and W is used as the beam splitter 66 b . Any of the beam splitters A, E, R, G, M, and T is used as the beam splitter 66 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 66 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 400 nm and the wavelengths of the semiconductor lasers 16 a , and 16 b may be 660 nm and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 66 a . Any of the beam splitters K, P, and V is used as the beam splitter 66 b . Any of the beam splitters B, D, Q, H, O, and S is used as the beam splitter 66 c . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 66 d.

Further, the semiconductor laser 16 b can be replaced with a photodetector 116 b in the present embodiment. Also, in the present embodiment, the module 166 a , semiconductor laser 16 a , and photodetector 116 a can be replaced with each other.

In the present embodiment in which the module 166 a , semiconductor laser 16 a , and photodetector 116 a are respectively replaced with the photodetector 116 a , semiconductor laser 16 a , and module 166 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 16 a , reflected by the disk 204 , and reflected by the beam splitter 66 b , may be inserted between the beam splitters 66 b and 66 c , if necessary, in order that the light passes through the beam splitter 66 c.

In the present embodiment in which the module 166 a , semiconductor laser 16 a , and photodetector 116 a are respectively replaced with the semiconductor laser 16 a , photodetector 116 a , and module 166 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 16 a and passed through the beam splitter 66 c , may be inserted between the beam splitters 66 c and 66 b , if necessary, in order that the light is reflected by the beam splitter 66 b.

In the sixteenth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 16 a and 16 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 16 a and 16 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 166 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 166 a , and the photodetectors 116 a and 116 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers 16 a and 16 b.

Seventeenth Embodiment

FIG. 17 shows the seventeenth embodiment of the optical head apparatus according to the present invention The module 167 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 167 a is 780 nm. The wavelengths of the semiconductor lasers 17 a and 17 b are 660 nm and 400 nm, respectively. The beam splitter D is used as a bean splitter 67 a . Any of the beam splitters H, P, and U is used as a beam splitter 67 b . Any of the beam splitters C, E, M, K, O, and X is used as a beam splitter 67 c . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as a beam splitter 67 d.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 17 b enters, as S-polarized, into the beam splitter 67 d . Almost all of the light is reflected therefrom and passes through the beam splitter 67 a . The light is reflected by the mirror 201 and is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 67 a , and enters, as P-polarized, into the beam splitter 67 d . Almost all of the light passes through the beam splitter 67 d and is then received by the photodetector 117 b.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 17 a enters, as S-polarized, into the beam splitter 67 b . Almost all of the light is reflected therefrom and is then reflected by the beam splitter 67 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 67 a and enters, as P-polarized, into the beam splitter 67 b . Almost all of the light passes through the beam splitter 67 b and enters, as P-polarized, into the beam splitter 67 c . Almost all of the light passes through the beam splitter 67 c and is received by the photodetector 117 a.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser integrated in the module 167 a is reflected by the beam splitter 67 c and passes through the beam splitter 67 b . Almost all of the light is then reflected by the beam splitter 67 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 67 a and passes through the beam splitter 67 b . Almost all of the light is then reflected by the beam splitter 67 c and is then received by the photodetector integrated in the module 167 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 660 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter D is used as the beam splitter 67 a . Any of the beam splitters I, R and T is used as the beam splitter 67 b . Any of the beam splitters B, F, and N is used as the beam splitter 67 c . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as the beam splitter 67 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 780 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 67 a . Any of the beam splitters G, N, and U is used as the beam splitter 67 b . Any of the beam splitters C, D, O, J, M, and X is used as the beam splitter 67 c . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 67 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 400 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 67 a . Any of the beam splitters I, Q and S is used as the beam splitter 67 b . Any of the beam splitters A, F and P is used as the beam splitter 67 c . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 67 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 660 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter P is used as the beam splitter 67 a . Any of the beam splitters G, M, and T is used as the beam splitter 67 b . Any of the beam splitters B, D, Q, J, N and W is used as the beam splitter 67 c . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 67 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 400 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 660 nm and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 67 a . Any of the beam splitters H, O, and S is used as the beam splitter 67 b . Any of the beam splitters A, E, R, K, P, and V is used as the beam splitter 67 c . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 67 d.

Further, the semiconductor laser 17 b can be replaced with a photodetector 117 b in the present embodiment. Also, in the present embodiment, the module 167 a , semiconductor laser 17 a , and photodetector 117 a can be replaced with each other.

In the present embodiment in which the module 167 a , semiconductor laser 17 a , and photodetector 117 a are respectively replaced with the photodetector 117 a , semiconductor laser 17 a , and module 117 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 17 a and reflected by the disk 204 and passed through the beam splitter 67 b , may be inserted between the beam splitters 67 b and 67 c , if necessary, in order that the light is reflected by the beam splitter 67 c.

In the present embodiment in which the module 167 a , semiconductor laser 17 a , and photodetector 117 a are respectively replaced with the semiconductor laser 17 a , photodetector 117 a , and module 167 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 17 a and reflected by the beam splitter 67 c , may be inserted between the beam splitters 67 c and 67 b , if necessary, in order that the light passes through the beam splitter 67 b.

In the seventeenth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 17 a and 17 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 17 a and 17 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 167 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 167 a , and the photodetectors 117 a and 117 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers 17 a and 17 b.

Eighteenth Embodiment

FIG. 18 shows the eighteenth embodiment of the optical head apparatus according to the present invention. The module 168 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 168 a is 780 nm. The wavelengths of the semiconductor lasers 18 a and 18 b are 400 nm and 660 nm, respectively. The beam splitter A is used as a beam splitter 68 a . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as a beam splitter 68 b . Any of the beam splitters H, P, and U is used as a beam splitter 68 c . Any of the beam splitters C, E, M, K, O, and X is used as a beam splitter 68 d.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 18 a enters, as P-polarized, into the beam splitter 68 b . Almost all of the light passes through the beam splitter 68 b and is reflected by the beam splitter 68 a . The light is reflected by the mirror 201 and is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 68 a , and enters, as S-polarized, into the beam splitter 68 b . Almost all of the light is reflected therefrom and is then received by the photodetector 118 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 18 b enters, as S-polarized, into the beam splitter 68 c . Almost all of the light is reflected therefrom and passes through the beam splitter 68 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 68 a and enters, as P-polarized, into the beam splitter 68 c . Almost all of the light passes through the beam splitter 68 c and enters, as P-polarized, into the beam splitter 68 d . Almost all of the light passes through the beam splitter 66 d and is received by the photodetector 118 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser integrated in the module 168 a is reflected by the beam splitter 68 d and passes through the beam splitter 68 c . Almost all of the light then passes through the beam splitter 68 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 68 a and passes through the beam splitter 68 c . Almost all of the light is then reflected by the beam splitter 68 d and is then received by the photodetector integrated in the module 168 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 660 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter A is used as the beam splitter 68 a . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 68 b . Any of the beam splitters I, R, and T is used as the beam splitter 68 c . Any of the beam splitters B, F, and N is used as the beam splitter 68 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 780 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 68 a . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 68 b . Any of the beam splitters G, N, and U is used as the beam splitter 68 c . Any of the beam splitters C, D, O, J, M, and X is used as the beam splitter 68 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 400 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 660 nm and 790 nm, respectively. At this time, the beam splitter B is used as the beam splitter 68 a . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 68 b . Any of the beam splatters I, Q, and S is used as the beam splitter 68 c . Any of the beam splitters A, F, and P is used as the beam splitter 68 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 660 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 68 a . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 68 b . Any of the beam splitters G, M, and T is used as the beam splitter 68 c . Any of the beam splitters D, D, Q, J, N, and W is used as the beam splitter 68 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 400 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 68 a . Any of the beam splitters I, L, Q, R, S, T, V, W, and Y is used as the beam splitter 68 b . Any of the beam splitters H, O, and S is used as the beam splitter 68 c . Any of the beam splitters A, E, R, K, P, and V is used as the beam splitter 68 d.

Further, the semiconductor laser 18 a can be replaced with a photodetector 118 a in the present embodiment. Also, in the present embodiment, the module 168 a , semiconductor laser 18 b , and photodetector 118 b can be replaced with each other.

In the present embodiment in which the module 168 a , semiconductor laser 18 b , and photodetector 118 b are respectively replaced with the photodetector 118 b , semiconductor laser 18 b , and module 168 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 18 b , reflected by the disk 204 , and has passed through the beam splitter 68 c , may be inserted between the beam splitters 68 c and 68 a , if necessary, in order that the light is reflected by the beam splitter 68 d.

In the present embodiment in which the module 168 a , semiconductor laser 18 b , and photodetector 118 b are respectively replaced with the semiconductor laser 18 b , photodetector 118 b , and module 168 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 18 b and reflected by the beam splitter 68 d , may be inserted between the beam splitters 68 d and 68 c , if necessary, in order that the light passes through the beam splitter 68 c.

In the eighteenth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 18 a and 18 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 18 a and 18 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 168 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 168 a , and the photodetectors 118 a and 118 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers 18 a and 18 b.

Nineteenth Embodiment

FIG. 19 shows the nineteenth embodiment of the optical head apparatus according to the present invention. The module 169 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 169 a is 780 nm. The wavelengths of the semiconductor lasers 19 a and 19 b are 400 nm and 660 nm, respectively. The beam splitter A is used as a beam splitter 69 a . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as a beam splitter 69 b . Any of the beam splitters K, O, and X is used as a beam splitter 69 c . Any of the beam splitters B, F, N, H, P and U is used as a beam splitter 69 d.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 19 a enters, as P-polarized, into the beam splitter 69 b . Almost all of the light passes through the beam splitter 69 b and is reflected by the beam splitter 69 a . The light is reflected by the mirror 201 and is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 69 a , and enters, as S-polarized, into the beam splitter 69 b . Almost all of the light is reflected therefrom and is then received by the photodetector 119 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 19 b enters, as S-polarized, into the beam splitter 69 c . Almost all of the light passes through the beam splitter 69 c and further passes through the beam splitter 69 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 69 a and enters, as S-polarized, into the beam splitter 69 c . Almost all of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 69 d . Almost all of the light is reflected therefrom and is received by the photodetector 119 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser integrated in the module 169 a passes through the beam splitter 69 d and is reflected by the beam splitter 69 c . Almost all of the light then passes through the beam splitter 69 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 69 a and is reflected by the beam splitter 69 c . Almost all of the light then passes through the beam splitter 69 d and is then received by the photodetector integrated in the module 169 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 660 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter A is used as the beam splitter 69 a . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 69 b . Any of the beam splitters L, Q, and W is used as the beam splitter 69 c . Any of the beam splitters C, E, and M is used as the beam splitter 69 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 780 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 69 a . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 69 b . Any of the beam splitters J, M, and X is used as the beam splitter 69 c . Any of the beam splitters A, F, P, G, N, and U is used as the beam splitter 69 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 400 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 660 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 69 a . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 69 b . Any of the beam splitters L, R, and V is used as the beam splitter 69 c . Any of the beam splitters C, D, and O is used as the beam splitter 69 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 660 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 69 a . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 69 b . Any of the beam splitters J, N, and W is used as the beam splitter 69 c . Any of the beam splitters A, E, R, G, M and T is used as the beam splitter 69 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 400 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 69 a . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 69 b . Any of the beam splitters K, P, and V is used as the beam splitter 69 c . Any of the beam splitters B, D, Q, H, O, and S is used as the beam splitter 69 d.

Further, the semiconductor laser 19 a can be replaced with a photodetector 119 a in the present embodiment. Also, in the present embodiment, the module 169 a , semiconductor laser 19 b , and photodetector 119 b can be replaced with each other.

In the present embodiment in which the module 169 a , semiconductor laser 19 b , and photodetector 119 b are respectively replaced with the photodetector 119 b , semiconductor laser 19 b , and module 169 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 19 b , reflected by the disk 204 , and reflected by the beam splitter 69 c , may be inserted between the beam splitters 69 c and 69 d , if necessary, in order that the light passes through the beam splitter 69 d.

In the present embodiment in which the module 169 a , semiconductor laser 19 b , and photodetector 119 b are respectively replaced with the semiconductor laser 19 b , photodetector 119 b , and module 169 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 19 b and has passed through the beam splitter 69 d , may be inserted between the beam splitters 69 d and 69 c , if necessary, in order that the light is reflected by the beam splitter 69 c.

In the nineteenth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 19 a and 19 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 19 a and 19 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetectors is only five. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 169 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor later integrated also in the module 169 a , and the photodetectors 119 a and 119 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers 19 a and 19 b.

9. Twentieth to Twenty-Fourth Embodiments

Type 7

The twentieth to twenty-fourth embodiments of the optical head apparatus according to the present invention each have one light source, one photodetector, and two modules. However, each of the two modules integrates one light source and one photodetector.

Twentieth Embodiment

FIG. 20 shows the twentieth embodiment of the optical head apparatus according to the present invention. The modules 170 a and 170 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 170 a and 170 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 20 a is 400 nm. The beam splitter C is used as a beam splitter 70 a . Any of the beam splitters B, D, and Q is used as a beam splitter 70 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as a beam splitter 70 c.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser 20 a enters, as S-polarized, into the beam splitter 70 c . Almost all of the light is reflected therefrom and passes through the beam splitter 70 b . Almost all of the light further passes through the beam splitter 70 a and is then reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 70 a and then the beam splitter 70 b . The light then enters, as P-polarized, into the beam splitter 70 c . Almost all of the light passes through the beam splitter 70 c and is received by the photodetector 120 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser in the module 170 b is reflected by the beam splitter 70 b and passes through the beam splitter 70 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 70 a and is reflected by the beam splitter 70 b . The light is then received by the photodetector in the module 170 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser in the module 170 a is reflected by the beam splitter 70 a and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 70 a and is received by the photodetector in the module 170 a.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 170 a and 170 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 400 nm. At this time, the beam splitter B is used as the beam splitter 70 a . Any of the beam splitters C, D and O is used as the beam splitter 70 b . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as the beam splitter 70 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 170 a and 170 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 660 nm. At this time, the beam splitter C is used as the beam splitter 70 a . Any of the beam splitters A, E, and R is used as the beam splitter 70 b . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 70 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 170 a and 170 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 660 nm. At this time, the beam splitter A is used as the beam splitter 70 a . Any of the beam splitters C, E, and M is used as the beam splitter 70 b . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 70 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 170 a and 170 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 780 nm. At this time, the beam splitter B is used as the beam splitter 70 a . Any of the beam splitters A, F and P is used as the beam splitter 70 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 70 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 170 a and 170 b may be 400 nm and 660 nm, respectively, and the wavelengths of the semiconductor laser 20 a may be 780 nm. At this time, the beam splitter A is used as the beam splitter 70 a . Any of the beam splitters B, F, and N is used as the beam splitter 70 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 70 c.

Further, the modules 170 a and 170 b , semiconductor laser 20 a , and photodetector 120 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 170 a , module 170 b , semiconductor laser 20 a , and photodetector 120 a are respectively replaced with the module 170 a , semiconductor laser 20 a , photodetector 120 a , and module 170 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 20 a , reflected by the disk 204 , and has passed through the beam splitter 70 b , may be inserted between the beam splitters 70 b and 70 c , if necessary, in order that the light is reflected by the beam splitter 70 c.

In the present embodiment in which the module 170 a , module 170 b , semiconductor laser 20 a , and photodetector 120 a are respectively replaced with the module 170 a , photodetector 120 a , semiconductor laser 20 a , and module 170 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 20 a and reflected by the beam splitter 70 c , may be inserted between the beam splitters 70 c and 70 b , if necessary, in order that the light passes through the beam splitter 70 b.

In the present embodiment in which the module 170 a , module 170 b , semiconductor laser 20 a , and photodetector 120 a are respectively replaced with the semiconductor laser 20 a , module 170 b , photodetector 120 a , and module 170 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 20 a , reflected by the disk 204 , and has passed through the beam splitter 70 b , may be inserted between the beam splitters 70 b and 70 c , if necessary, in order that the light is reflected by the beam splitter 70 c.

In the present embodiment in which the module 170 a , module 170 b , semiconductor laser 20 a , and photodetector 120 a are respectively replaced with the photodetector 120 a , module 170 b , semiconductor laser 20 a , and module 170 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 20 a and reflected by the beam splitter 70 c , may be inserted between the beam splitters 70 c and 70 b , if necessary, in order that the light passes through the beam splitter 70 b.

In the present embodiment in which the module 170 a , module 170 b , semiconductor laser 20 a , and photodetector 120 a are respectively replaced with the semiconductor laser 20 a , photodetector 120 a , module 170 a or 170 b , and module 170 b or 170 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 20 a , reflected by the disk 204 , and has passed through the beam splitter 70 a , may be inserted between the beam splitters 70 a and 70 b , if necessary, in order that the light is reflected by the beam splitter 70 b.

In the present embodiment in which the module 170 a , module 170 b , semiconductor laser 20 a , and photodetector 120 a are respectively replaced with the photodetector 120 a , semiconductor laser 20 a , module 170 a or 170 b , and module 170 b or 170 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 20 a , and reflected by the beam splitter 70 b , may be inserted between the beam splitters 70 b and 70 a , if necessary, in order that the light passes through the beam splitter 70 a.

In the twentieth embodiment of the optical head apparatus according to the present invention, the semiconductor laser 20 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor laser 20 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the modules, light source, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetectors integrated in the modules 170 a and 170 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers integrated also in the modules 170 a and 170 b , and the photodetector 120 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 20 a.

Twenty-First Embodiment

FIG. 21 shows the twenty-first embodiment of the optical head apparatus according to the present invention. The modules 171 a and 171 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 171 a and 171 b are 780 nm and 660 nm. The wavelength of the semiconductor laser 21 a is 400 nm. The beam splitter F is used as a beam splitter 71 a . Any of the beam splitters A, E, and R is used as a beam splitter 71 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as a beam splitter 71 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 21 a enters, as P-polarized, into the beam splitter 71 c . Almost all of the light passes through the beam splitter 71 c and is reflected by the beam splitter 71 b . Almost all of the light is reflected by the beam splitter 71 a and is then reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 71 a and then by the beam splitter 71 b , and enters, as S-polarized, into the beam splitter 71 c . Almost all of the light is reflected by the beam splitter 71 c and is received by the photodetector 121 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser in the module 171 b passes through the beam splitter 71 b and is reflected by the beam splitter 71 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 71 a and passes through the beam splitter 71 b . The light is then received by the photodetector in the module 171 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser in the module 171 a passes through the beam splitter 71 a and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 71 a and is received by the photodetector in the module 171 a.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 171 a and 171 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 400 nm. At this time, the beam splitter E is used as the beam splitter 71 a . Any of the beam splitters A, F, and P is used as the beam splitter 71 b . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as the beam splitter 71 c.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 171 a and 171 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 660 nm. At this time, the beam splitter F is used as the beam splitter 71 a . Any of the beam splitters B, D, and Q is used as the beam splitter 71 b . Any of the beam splitters H, K, O, F, S, U, V, X and Y is used as the beam splitter 71 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 171 a and 171 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 660 nm. At this time, the beam splitter D is used as the beam splitter 71 a . Any of the beam splitters B, F, and N is used as the beam splitter 71 b . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 71 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 171 a and 171 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 780 nm. At this time, the beam splitter E is used as the beam splitter 71 a . Any of the beam splitters C, D, and O is used as the beam splitter 71 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 71 c.

In the present embodiment, the wavelengths of the semiconductor lasers 171 a and 171 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 780 nm. At this time, the beam splitter D is used as the beam splitter 71 a . Any of the beam splitters C, E, and M is used as the beam splitter 71 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 71 c.

Further, the modules 171 a and 171 b , semiconductor laser 21 a , and photodetector 121 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 171 a , module 171 b , semiconductor laser 21 a , and photodetector 121 a are respectively replaced with the module 171 a , semiconductor laser 21 a , photodetector 121 a , and module 171 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 21 a , reflected by the disk 204 , and reflected by the beam splitter 71 b , may be inserted between the beam splitters 71 b and 71 c , if necessary, in order that the light passes through the beam splitter 71 c.

In the present embodiment in which the module 171 a , module 171 b , semiconductor laser 21 a , and photodetector 121 a are respectively replaced with the module 171 a , photodetector 121 a , semiconductor laser 21 a , and module 171 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 21 a and passed through the beam splitter 71 c , may be inserted between the beam splitters 71 c and 71 b , if necessary, in order that the light is reflected by the beam splitter 71 b.

In the present embodiment in which the module 171 a , module 171 b , semiconductor laser 21 a , and photodetector 121 a are respectively replaced with the semiconductor laser 21 a , module 171 b , photodetector 121 a , and module 171 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 21 a , reflected by the disk 204 , and reflected by the beam splitter 71 b , may be inserted between the beam splitters 70 b and 70 c , if necessary, in order that the light passes through the beam splitter 71 c.

In the present embodiment in which the module 171 a , module 171 b , semiconductor laser 21 a , and photodetector 121 a are respectively replaced with the photodetector 121 a , module 171 b , semiconductor laser 21 a , and module 171 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 21 a and passed through the beam splitter 71 c , may be inserted between the beam splitters 71 c and 71 b , if necessary, in order that the light is reflected by the beam splitter 71 b.

In the present embodiment in which the module 171 a , module 171 b , semiconductor laser 21 a , and photodetector 121 a are respectively replaced with the semiconductor laser 21 a , photodetector 121 a , module 171 a or 171 b , and module 171 b or 171 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 21 a , reflected by the disk 204 , and reflected by the beam splitter 71 a , may be inserted between the beam splitters 71 a and 71 b , if necessary, in order that the light passes through the beam splitter 71 b.

In the present embodiment in which the module 171 a , module 171 b , semiconductor laser 21 a , and photodetector 121 a are respectively replaced with the photodetector 121 a , semiconductor laser 21 a , module 171 a or 171 b , and module 171 b or 171 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 21 a , and passed through the beam splitter 71 b , may be inserted between the beam splitters 71 b and 71 a , if necessary, in order that the light is reflected by the beam splitter 71 a.

In the twenty-first embodiment of the optical head apparatus according to the present invention, the semiconductor laser 21 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor laser 21 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the modules, light source, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetectors integrated in the modules 171 a and 171 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers integrated also in the modules 171 a and 171 b , and the photodetector 121 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 21 a.

Twenty-Second Embodiment

FIG. 22 shows the twenty-second embodiment of the optical head apparatus according to the present invention. The modules 172 a and 172 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 172 a and 172 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 22 a is 400 nm The beam splitter C is used as a beam splitter 72 a . Any of the beam splitters A, E, and R is used as a beam splitter 72 b . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as a beam splitter 72 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 22 a enters, as P-polarized, into the beam splitter 72 c . Almost all of the light passes through the beam splitter 72 c and is reflected by the beam splitter 72 b . Almost all of the light passes through the beam splitter 72 a and is then reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 72 a and is then reflected by the beam splitter 72 b , and enters, as S-polarized, into the beam splitter 72 c . Almost all of the light is reflected by the beam splitter 72 c and is received by the photodetector 122 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser in the module 172 b passes through the beam splitter 72 b and also passes through the beam splitter 72 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 72 a and also passes through the beam splitter 72 b . The light is then received by the photodetector in the module 172 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser in the module 172 a is reflected by the beam splitter 72 a and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 72 a and is received by the photodetector in the module 172 a.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 172 a and 172 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 400 nm. At this time, the beam splitter B is used as the beam splitter 72 a . Any of the beam splitters A, F, and P is used as the beam splitter 72 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 72 c.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 172 a and 172 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 660 nm. At this time, the beam splitter C is used as the beam splitter 72 a . Any of the beam splitters B, D, and Q is used as the beam splitter 72 b . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 72 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 172 a and 172 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 660 nm. At this time, the beam splitter A is used as the beam splitter 72 a . Any of the beam splitters B, F, and N is used as the beam splitter 72 b . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 72 c.

In the present embodiment, the wavelengths of the semiconductor lasers 172 a and 172 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 780 nm. At this time, the beam splitter B is used as the beam splitter 72 a . Any of the beam splitters C, D, and O is used as the beam splitter 72 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 72 c.

In the present embodiment, the wavelengths of the semiconductor lasers 172 a and 172 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 780 nm. At this time, the beam splitter A is used as the beam splitter 72 a . Any of the beam splitters C, E, and M is used as the beam splitter 72 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 72 c.

Further, the modules 172 a and 172 b , semiconductor laser 22 a , and photodetector 122 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 172 a , module 172 b , semiconductor laser 22 a , and photodetector 122 a are respectively replaced with the module 172 a , semiconductor laser 22 a , photodetector 122 a , and module 172 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 22 a , reflected by the disk 204 , and reflected by the beam splitter 72 b , may be inserted between the beam splitters 72 b and 72 c , if necessary, in order that the light passes through the beam splitter 72 c.

In the present embodiment in which the module 172 a , module 172 b , semiconductor laser 22 a , and photodetector 122 a are respectively replaced with the module 172 a , photodetector 122 a , semiconductor laser 22 a , and module 172 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 22 a and passed through the beam splitter 72 c , may be inserted between the beam splitters 72 c and 72 b , if necessary, in order that the light is reflected by the beam splitter 72 b.

In the present embodiment in which the module 172 a , module 172 b , semiconductor laser 22 a , and photodetector 122 a are respectively replaced with the semiconductor laser 22 a , module 172 b , module 172 a , and photodetector 122 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 22 a , reflected by the disk 204 , and has passed through the beam splitter 72 a , may be inserted between the beam splitters 72 a and 72 b , if necessary, in order that the light is reflected by the beam splitter 72 b.

In the present embodiment in which the module 172 a , module 172 b , semiconductor laser 22 a , and photodetector 122 a are respectively replaced with the photodetector 122 a , module 172 b , module 172 a , and semiconductor laser 22 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 22 a and reflected by the beam splitter 72 b , may be inserted between the beam splitters 72 b and 72 a , if necessary, in order that the light passes through the beam splitter 72 a.

In the present embodiment in which the module 172 a , module 172 b , semiconductor laser 22 a , and photodetector 122 a are respectively replaced with the semiconductor laser 22 a , module 172 b , photodetector 122 a , and module 172 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 22 a , reflected by the disk 204 , and has passed through the beam splitter 72 a , may be inserted between the beam splitters 72 a and 72 b , if necessary, in order that the light is reflected by the beam splitter 72 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 22 a , reflected by the disk 204 , and reflected by the beam splitter 72 b , may be inserted between the beam splitters 72 b and 72 c , if necessary, in order that the light passes through the beam splitter 72 c.

In the present embodiment in which the module 172 a , module 172 b , semiconductor laser 22 a , and photodetector 122 a are respectively replaced with the photodetector 122 a , module 172 b , semiconductor laser 22 a , and module 172 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 22 a and passed through the beam splitter 72 c , may be inserted between the beam splitters 72 c and 72 b , if necessary, in order that the light is reflected by the beam splitter 72 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 22 a and reflected by the beam splitter 72 b , may be inserted between the beam splitters 72 b and 72 a , if necessary, in order that the light passes through the beam splitter 72 a.

In the twenty-second embodiment of the optical head apparatus according to the present invention, the semiconductor laser 22 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 22 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the modules, light source, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetectors integrated in the modules 172 a and 172 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers integrated also in the modules 172 a and 172 b , and the photodetector 122 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 22 a.

Twenty-Third Embodiment

FIG. 23 shows the twenty-third embodiment of the optical head apparatus according to the present invention. The modules 173 a and 173 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 173 a and 173 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 23 a is 400 nm. The beam splitter F is used as a beam splitter 73 a . Any of the beam splitters B, D and Q is used as a beam splitter 73 b . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as a beam splitter 73 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 23 a enters, as S-polarized, into the beam splitter 73 c . Almost all of the light is reflected therefrom and passes through the beam splitter 73 b . Almost all of the light is reflected by the beam splitter 73 a and is then reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 73 a and then passes through the beam splitter 73 b , and enters, as P-polarized, into the beam splitter 73 c . Almost all of the light passes through the beam splitter 73 c and is received by the photodetector 123 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser in the module 173 b is reflected by the beam splitter 73 b and also by the beam splitter 73 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 73 a and also by the beam splitter 73 b . The light is then received by the photodetector in the module 173 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser in the module 173 a passes through the beam splitter 73 a and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 73 a and is received by the photodetector in the module 173 a.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 173 a and 173 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 400 nm. At this time, the beam splitter E is used as the beam splitter 73 a . Any of the beam splitters C, D and O is used as the beam splitter 73 b . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as the beam splitter 73 c.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 173 a and 173 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 660 nm. At this time, the beam splitter F is used as the beam splitter 73 a . Any of the beam splitters A, E and R is used as the beam splitter 73 b . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 73 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 173 a and 173 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 660 nm. At this time, the beam splitter D is used as the beam splitter 73 a . Any of the beam splitters C, E, and M is used as the beam splitter 73 b . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 73 c.

In the present embodiment, the wavelengths of the semiconductor lasers 173 a and 173 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 780 nm. At this time, the beam splitter E is used as the beam splitter 73 a . Any of the beam splitters A, F and P is used as the beam splitter 73 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 73 c.

In the present embodiment, the wavelengths of the semiconductor lasers 173 a and 173 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 780 nm. At this time, the beam splitter D is used as the beam splitter 73 a . Any of the beam splitters B, F and N is used as the beam splitter 73 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 73 c.

Further, the modules 173 a and 173 b , semiconductor laser 23 a , and photodetector 123 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 173 a , module 173 b , semiconductor laser 23 a , and photodetector 123 a are respectively replaced with the module 173 a , semiconductor laser 23 a , photodetector 123 a , and module 173 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 23 a , reflected by the disk 204 , and has passed through the beam splitter 73 b , may be inserted between the beam splitters 73 b and 73 c , if necessary, in order that the light is reflected by the beam splitter 73 c.

In the present embodiment in which the module 173 a , module 173 b , semiconductor laser 23 a , and photodetector 123 a are respectively replaced with the module 173 a , photodetector 123 a , semiconductor laser 23 a , and module 173 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 23 a and reflected by the beam splitter 73 c , may be inserted between the beam splitters 73 c and 73 b , if necessary, in order that the light passes through the beam splitter 73 b.

In the present embodiment in which the module 173 a , module 173 b , semiconductor laser 23 a , and photodetector 123 a are respectively replaced with the semiconductor laser 23 a , module 173 b , module 173 a , and photodetector 123 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 23 a , reflected by the disk 204 , and reflected by the beam splitter 73 a , may be inserted between the beam splitters 73 a and 73 b , if necessary, in order that the light passes through the beam splitter 73 b.

In the present embodiment in which the module 173 a , module 173 b , semiconductor laser 23 a , and photodetector 123 a are respectively replaced with the photodetector 123 a , module 173 b , module 173 a , and semiconductor laser 23 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 23 a and passed through the beam splitter 73 b , may be inserted between the beam splitters 73 b and 73 a , if necessary, in order that the light is reflected by the beam splitter 73 a.

In the present embodiment in which the module 173 a , module 173 b , semiconductor laser 23 a , and photodetector 123 a are respectively replaced with the semiconductor laser 23 a , module 173 b , photodetector 123 a , and module 173 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 23 a , reflected by the disk 204 , and reflected by the beam splitter 73 a , may be inserted between the beam splitters 73 a and 73 b , if necessary, in order that the light passes through the beam splitter 73 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 23 a , reflected by the disk 204 , and has passed through the beam splitter 73 b , may be inserted between the beam splitters 73 b and 73 c , if necessary, in order that the light is reflected by the beam splitter 73 c.

In the present embodiment in which the module 173 a , module 173 b , semiconductor laser 23 a , and photodetector 123 a are respectively replaced with the photodetector 123 a , module 173 b , semiconductor laser 23 a , and module 173 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 23 a and reflected by the beam splitter 73 c , may be inserted between the beam splitters 73 c and 73 b , if necessary, in order that the light passes through the beam splitter 73 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 23 a and passed through the beam splitter 73 b , may be inserted between the beam splitters 73 b and 73 a , if necessary, in order that the light is reflected by the beam splitter 73 a.

In the twenty-third embodiment of the optical head apparatus according to the present invention, the semiconductor laser 23 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 23 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the modules, light source, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetectors integrated in the modules 173 a and 173 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers integrated also in the modules 173 a and 173 b , and the photodetector 123 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 23 a.

Twenty-Fourth Embodiment

FIG. 24 shows the twenty-fourth embodiment of the optical head apparatus according to the present invention. The modules 174 a and 174 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 174 a and 174 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 24 a is 400 nm. The beam splitter D is used as a beam splitter 74 a . Any of the beam splitters C, E, and M is used as a beam splitter 74 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as a beam splitter 74 c.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 24 a enters, as S-polarized, into the beam splitter 74 c . Almost all of the light is reflected therefrom and passes through the beam splitter 74 a . The light is then reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 74 a and enters, as P-polarized, into the beam splitter 74 c . Almost all of the light passes through the beam splitter 74 c and is received by the photodetector 124 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser in the module 174 b passes through the beam splitter 74 b and is reflected by the beam splitter 74 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 74 a and passes through the beam splitter 74 b . The light is then received by the photodetector in the module 174 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser in the module 174 a is reflected by the beam splitter 74 b and by the beam splitter 74 a , and is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 74 a and by the beam splitter 74 b , and is received by the photodetector in the module 174 a.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 174 a and 174 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 400 nm. At this time, the beam splitter D is used as the beam splitter 74 a . Any of the beam splitters B, F, and N is used as the beam splitter 74 b . Any of the beam splitters G, J, M, N, T, U, W, X, and Y is used as the beam splitter 74 c.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 174 a and 174 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 660 nm. At this time, the beam splitter E is used as the beam splitter 74 a . Any of the beam splitters C, D, and O is used as the beam splitter 74 b . Any of the beam splitters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 74 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 174 a and 174 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 660 nm. At this time, the beam splitter E is used as the beam splitter 74 a . Any of the beam splitters A, F, and P is used as the beam splitter 74 b . Any of the beam splatters H, K, O, P, S, U, V, X, and Y is used as the beam splitter 74 c.

In the present embodiment, the wavelengths of the semiconductor lasers 174 a and 174 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 780 nm. At this time, the beam splitter F is used as the beam splitter 74 a . Any of the beam splitters B, P, and Q is used as the beam splitter 74 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 74 c.

In the present embodiment, the wavelengths of the semiconductor lasers 174 a and 174 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 780 nm. At this time, the beam splitter F is used as the beam splitter 74 a . Any of the beam splitters A, E and R is used as the beam splitter 74 b . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 74 c.

Further, the semiconductor laser 24 a and the photodetector 124 a can be replaced with each other, in the present embodiment. Also, one of the modules 174 a and 174 b can be replaced with the semiconductor laser 24 a , and the other one of the modules 174 a and 174 b can be replaced with the photodetector 124 a , in the present embodiment.

In the twenty-fourth embodiment of the optical head apparatus according to the present invention, the semiconductor laser 24 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 24 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the modules, light source, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetectors integrated in the modules 174 a and 174 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers integrated also in the modules 174 a and 174 b , and the photodetector 124 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 24 a.

10. Twenty-Fifth to Twenty-Ninth Embodiments

Type 8

The twenty-fifth to twenty-ninth embodiments of the optical head apparatus according to the present invention each have two light sources, one photodetector, and one module. However, the one module integrates one light source and one photodetector.

Twenty-Fifth Embodiment

FIG. 25 shows the twenty-fifth embodiment of the optical head apparatus according to the present invention. The module 175 a integrates one semiconductor laser and one photodetector The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 175 a is 400 nm. The wavelengths of the semiconductor lasers 25 a and 25 b are 660 nm and 780 nm, respectively. The beam splitter A is used as a beam splitter 75 a . Any of the beam splitters H, P, and U is used as a beam splitter 75 b . Any of the beam splitters I, R, T, S, V and Y is used as a beam splitter 75 c.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 175 a is reflected by the beam splitter 75 a and by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 75 a and is received by the photodetector in the module 175 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 25 a enters, as S-polarized, into the beam splitter 75 b . Almost all of the light is reflected therefrom and passes through the beam splitter 75 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 75 a and enters, as P-polarized, into the beam splitter 75 b . Almost all of the light passes through the beam splitter 75 b , and enters, as P-polarized, into the beam splitter 75 c . Almost all of the light passes through the beam splitter 75 c and is received by the photodetector 125 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 25 b enters, as S-polarized, into the beam splitter 75 c . About 50% of the light is reflected therefrom, and passes through the beam splitter 75 b . Almost all of the light then passes through the beam splitter 75 a and is reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 75 a and also passes through the beam splitter 75 b . The light enters, as P-polarized, into the beam splitter 75 c . About 50% passes through the beam splitter 75 c and is received by the photodetector 125 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 400 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 75 a . Any of the beam splitters I, R and T is used as the beam splitter 75 b . Any of the beam splitters H, P, and U is used as the beam splitter 75 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 660 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 75 a . Any of the beam splitters G, N, and U is used as the beam splitter 75 b . Any of the beam splitters I, Q, S, T, W and Y is used as the beam splitter 75 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 660 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 75 a . Any of the beam splitters I, Q and S is used as the beam splitter 75 b . Any of the beam splitters G, N, and U is used as the beam splitter 75 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 780 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 75 a . Any of the beam splitters C, M and T is used as the beam splitter 75 b . Any of the beam splitters H, O, S, U, X and Y is used as the beam splitter 75 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 780 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 75 a . Any of the beam splitters I, O, and S is used as the beam splitter 75 b . Any of the beam splitters C, M, T, U, X, and Y is used as the beam splitter 75 c.

Further, the module 175 a , semiconductor lasers 25 a and 25 b , and photodetector 125 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the module 175 a , semiconductor laser 25 a , photodetector 125 a , and semiconductor laser 25 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 a , reflected by the disk 204 , and has passed through the beam splitter 75 b , may be inserted between the beam splitters 75 b and 75 c , if necessary, in order that the light is reflected by the beam splitter 75 c.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the semiconductor laser 25 a or 25 b , module 175 a , photodetector 125 a , and semiconductor laser 25 b or 25 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 a or 25 b , reflected by the disk 204 , and has passed through the beam splitter 75 b , may be inserted between the beam splitters 75 b and 75 c , if necessary, in order that the light is reflected by the beam splitter 75 c.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the semiconductor laser 25 a or 25 b , photodetector 125 a , module 175 a , and semiconductor laser 25 b or 25 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 a or 25 b , reflected by the disk 204 , and has passed through the beam splitter 75 a , may be inserted between the beam splitters 75 a and 75 b , if necessary, in order that the light is reflected by the beam splitter 75 b.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the semiconductor laser 25 b , semiconductor laser 25 a , photodetector 15 a , and module 175 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 a and 25 b , reflected by the disk 204 , and has passed through the beam splitter 75 b , may be inserted between the beam splitters 75 b and 75 c , if necessary, in order that the light is reflected by the beam splitter 75 c.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the module 175 a , photodetector 125 a , semiconductor laser 25 b , and semiconductor laser 25 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 b and reflected by the beam splitter 75 c , may be inserted between the beam splitters 75 c and 75 b , if necessary, in order that the light passes through the beam splitter 75 b.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the photodetector 125 a , module 175 a , semiconductor laser 25 b , and semiconductor laser 25 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 b and reflected by the beam splitter 75 c , may be inserted between the beam splitters 75 c and 75 b , if necessary, in order that the light passes through the beam splitter 75 b.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the photodetector 125 a , semiconductor laser 25 a , module 175 a , and semiconductor laser 25 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 a and reflected by the beam splitter 75 b , may be inserted between the beam splitters 75 b and 75 a , if necessary, in order that the light passes through the beam splitter 75 a.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the photodetector 125 a , semiconductor laser 25 a , semiconductor laser 25 b , and module 175 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 a and reflected by the beam splitter 75 b , may be inserted between the beam splitters 75 b and 75 a , if necessary, in order that the light passes through the beam splitter 75 a . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 b and reflected by the beam splitter 75 c , may be inserted between the beam splitters 75 c and 75 b , it necessary, in order that the light passes through the beam splitter 75 b.

In the present embodiment in which the module 175 a , semiconductor laser 25 a , semiconductor laser 25 b , and photodetector 125 a are respectively replaced with the semiconductor laser 25 a , photodetector 125 a , semiconductor laser 25 b , and module 175 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 a , reflected by the disk 204 , and has passed through the beam splitter 75 a , may be inserted between the beam splitters 75 a and 75 b , if necessary, in order that the light is reflected by the beam splitter 75 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 25 b and reflected by the beam splitter 75 c , may be inserted between the beam splitters 75 c and 75 b , if necessary, in order that the light passes through the beam splitter 75 b.

In the twenty-fifth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 25 a and 25 b are not integrated with other light sources or photodetectors Therefore, the semiconductor lasers 25 a and 25 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 175 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 175 a , and the photodetector 125 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers 25 a and 25 b.

Twenty-Sixth Embodiment

FIG. 26 shows the twenty-sixth embodiment of the optical head apparatus according to the present invention. The modules 176 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 176 a is 400 nm. The wavelengths of the semiconductor lasers 26 a and 26 b are 660 nm and 780 nm, respectively. The beam splitter D is used as a beam splitter 76 a . Any of the beam splitters K, O, and X is used as a beam splitter 76 b . Any of the beam splitters L, Q, W, S, V, and Y is used as a beam splitter 76 c.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 176 a passes through the beam splitter 76 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 76 a and is received by the photodetector in the module 176 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 26 a enters, as P-polarized, into the beam splitter 76 b . Almost all of the light passes through the beam splitter 76 b and is reflected by the beam splitter 76 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 76 a . Almost all of the light enters, as S-polarized, into the beam splitter 76 b is reflected therefrom and enters, as S-polarized, into the beam splitter 76 c . Almost all of the light is reflected therefrom, and is received by the photodetector 126 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 26 b enters, as P-polarized, into the beam splitter 76 c . About 50% of the light passes through the beam splitter 76 c and is reflected by the beam splitter 76 b . Almost all of the light is reflected by the beam splitter 76 a and is reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 76 a and also by the beam splitter 76 b . The light enters, as S-polarized, into the beam splitter 76 c . About 50% is reflected therefrom and is received by the photodetector 126 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 400 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter D is used as the beam splitter 76 a . Any of the beam splitters L, Q, and W is used as the beam splitter 76 b . Any of the beam splitters K, O and X is used as the beam splitter 76 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 660 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter E is used as the beam splitter 76 a . Any of the beam splitters J, M and X is used as the beam splitter 76 b . Any of the beam splitters L, R, V, T, W and Y is used as the beam splitter 76 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 660 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter E is used as the beam splitter 76 a . Any of the beam splitters L, R, and V is used as the beam splitter 76 b . Any of the beam splitters J, M and X is used as the beam splitter 76 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 780 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter F is used as the beam splitter 76 a . Any of the beam splitters J, N, and W is used as the beam splitter 76 b . Any of the beam splitters K, P, V, U, X and Y is used as the beam splitter 76 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 780 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter F is used as the beam splitter 76 a . Any of the beam splitters K, P, and V is used as the beam splitter 76 b . Any of the beam splitters J, N, W, U, X, and Y is used as the beam splitter 76 c.

Further, the modules 176 a , semiconductor lasers 26 a and 26 b , and photodetector 126 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the module 176 a , semiconductor laser 26 a , photodetector 126 a , and semiconductor laser 26 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 a , reflected by the disk 204 , and reflected by the beam splitter 76 b , may be inserted between the beam splitters 76 b and 76 c , if necessary, in order that the light passes through the beam splitter 76 c.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the semiconductor laser 26 a or 26 b , module 176 a , photodetector 126 a , and semiconductor laser 26 b or 26 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 a or 26 b , reflected by the disk 204 , and has been reflected by the beam splitter 76 b , may be inserted between the beam splitters 76 b and 76 c , if necessary, in order that the light passes through the beam splitter 76 c.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the semiconductor laser 26 a or 26 b , photodetector 126 a , module 176 a , and semiconductor laser 26 b or 26 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 a or 26 b , reflected by the disk 204 , and reflected by the beam splitter 76 a , may be inserted between the beam splitters 76 a and 76 b , if necessary, in order that the light passes through the beam splitter 76 b.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the semiconductor laser 26 b , semiconductor laser 26 a , photodetector 126 a , and module 176 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 26 a and 26 b , reflected by the disk 204 , and reflected by the beam splitter 76 b , may be inserted between the beam splitters 76 b and 76 c , if necessary, in order that the light is reflected by the beam splitter 76 c.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the module 176 a , photodetector 126 a , semiconductor laser 26 b , and semiconductor laser 26 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 b and passed through the beam splitter 76 c , may be inserted between the beam splitters 76 c and 76 b , if necessary, in order that the light is reflected by the beam splitter 76 b.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the photodetector 126 a , module 176 a , semiconductor laser 26 b , and semiconductor laser 26 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 b and passed through the beam splitter 76 c , may be inserted between the beam splitters 76 c and 76 b , if necessary, in order that the light is reflected by the team splitter 76 b.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the photodetector 126 a , semiconductor laser 26 a , module 176 a , and semiconductor laser 26 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 a and passed through the beam splitter 76 b , may be inserted between the beam splitters 76 b and 76 a , if necessary, in order that the light is reflected by the beam splitter 76 a.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the photodetector 126 a , semiconductor laser 26 a , semiconductor laser 26 b , and module 176 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 a and passed through the beam splitter 76 b , may be inserted between the beam splitters 76 b and 76 a , if necessary, in order that the light is reflected by the beam splitter 76 a . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 b and passed through the beam splitter 76 c , may be inserted between the beam splitter 76 c and 76 b , if necessary, in order that the light passes through the beam splitter 76 b.

In the present embodiment in which the module 176 a , semiconductor laser 26 a , semiconductor laser 26 b , and photodetector 126 a are respectively replaced with the semiconductor laser 26 a , photodetector 126 a , semiconductor laser 26 b , and module 176 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 a , reflected by the disk 204 , and reflected by the beam splitter 76 a , may be inserted between the beam splitters 76 a and 76 b , if necessary, in order that the light passes through the beam splitter 76 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 b and passed through the beam splitter 76 c , may be inserted between the beam splitters 76 c and 76 b , if necessary, in order that the light is reflected by the beam splitter 76 b.

In the twenty-sixth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 26 a and 26 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 26 a and 26 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 176 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 176 a , and the photodetector 126 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers 26 a and 26 b.

Twenty-Seventh Embodiment

FIG. 27 shows the twenty-seventh embodiment of the optical head apparatus according to the present invention. The module 177 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 177 a is 400 nm. The wavelengths of the semiconductor lasers 27 a and 27 b are 660 nm and 780 nm, respectively. The beam splitter A is used as a beam splitter 77 a . Any of the beam splitters S, V, and Y is used as a beam splitter 77 b . Any of the beam splitters C, E, M, K, O, and X is used as a beam splitter 77 c.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 177 a is reflected by the beam splitter 77 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 77 a and is received by the photodetector in the module 177 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 27 a passes through the beam splitter 77 c and enters, as S-polarized, into the beam splitter 77 b . Almost all of the light passes through the beam splitter 77 b and passes through the beam splitter 77 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 77 a and enters, as P-polarized, into the beam splitter 77 b . Almost all of the light passes through the beam splitter 77 b and is received by the photodetector 17 a.

In case of using any of the beam splitters K, O, and X as the beam splitter 77 c , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a and passed through the beam splitter 77 c , may be inserted between the beam splitters 77 c and 77 b , in order that the light is reflected by the beam splitter 77 b.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 27 b enters, as S-polarized, into the beam splitter 77 c . Almost all of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 77 b . About 50% of the light is reflected therefrom, and passes through the beam splitter 77 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 77 a and enters, as P-polarized, into the beam splitter 77 b . About 50% of the light passes through the beam splitter 77 b and is received by the photodetector 127 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 400 nm and the wavelengths of the semiconductor lasers 27 a and 27 b may respectively be 780 nm and 660 nm. At this time, the beam splitter A is used as the beam splitter 77 a . Any of the beam splitters S, V, and Y is used as the beam splitter 77 b . Any of the beam splitters B, F, N, H, P, and U is used as the beam splitter 77 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 660 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 77 a . Any of the beam splitters T, W, and Y is used as the beam splitter 77 b . Any of the beam splitters C, D, O, J, M, and X is used as the beam splitter 77 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 660 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 77 a . Any of the beam splitters T, W, and Y is used as the beam splitter 77 b . Any of the beam splitters A, F, P, G, N, and U is used as the beam splitter 77 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 780 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 77 a . Any of the beam splitters U, X, and Y is used as the beam splitter 77 b . Any of the beam splitters B, D, Q, H, O, S, J, N, W, U, X, and Y is used as the beam splitter 77 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 780 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beat splitter 77 a . Any of the beam splitters U, X, and Y is used as the beam splitter 77 b . Any of the beam splitters A, E, R, G, M, T, K, P, V, U, X, and Y is used as the beam splitter 77 c.

Further, the modules 177 a , semiconductor lasers 27 a and 27 b , and photodetector 127 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 127 a are respectively replaced with the module 177 a , photodetector 127 a , semiconductor laser 27 b , and semiconductor laser 27 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a , reflected by the disk 204 , and reflected by the beam splitter 77 b , may be inserted between the beam splitters 77 b and 77 c , if necessary, in order that the light passes through the beam splitter 77 c.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 127 a are respectively replaced with the semiconductor laser 27 b , semiconductor laser 27 a , photodetector 127 a , and module 177 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 b , reflected by the disk 204 , and has passed through the beam splitter 77 a , may be inserted between the beam splitters 77 a and 77 b , if necessary, in order that the light is reflected by the beam splitter 77 b.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 127 a are respectively replaced with the semiconductor laser 27 a or 27 b , module 177 a , photodetector 127 a , and semiconductor laser 27 b or 27 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a or 27 b , reflected by the disk 204 , and has passed through the beam splitter 77 a , may be inserted between the beam splitters 77 a and 77 b , if necessary, in order that the light passes through the beam splitter 77 b.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 127 a are respectively replaced with the semiconductor laser 27 a , photodetector 127 a , semiconductor laser 27 b , and module 177 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a , reflected by the disk 204 , and has passed through the beam splitter 77 a , may be inserted between the beam splitters 77 a and 77 b , if necessary, in order that the light is reflected by the beam splitter 77 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a , reflected by the disk 204 , and reflected by the beam splitter 77 b , may be inserted between the beam splitters 77 b and 77 c , if necessary, in order that the light passes through the beam splitter 77 c.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 177 a are respectively replaced with the semiconductor laser 27 a or 27 b , photodetector 127 a , module 177 a , and semiconductor laser 27 b or 27 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a or 27 b , reflected by the disk 204 , and has passed through the beam splitter 77 a , may be inserted between the beam splitters 77 a and 77 b , if necessary, in order that the light is reflected by the beam splitter 77 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a or 27 b , reflected by the disk 204 , and reflected by the beam splitter 77 b , may be inserted between the beam splitters 77 b and 77 c , if necessary, in order that the light passes through the beam splitter 77 c.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 127 a are respectively replaced with the semiconductor laser 27 b , semiconductor laser 27 a , module 177 a , and photodetector 127 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a and passed through the beam splitter 77 c , may be inserted between the beam splitters 77 c and 77 b , if necessary, in order that the light is reflected by the beam splitter 77 b.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 127 a are respectively replaced with the photodetector 127 a , module 177 a , semiconductor laser 27 b , and semiconductor laser 27 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 b and reflected by the beam splitter 77 b , may be inserted between the beam splitters 77 b and 77 a , if necessary, in order that the light passes through the beam splitter 77 a.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 127 a are respectively replaced with the photodetector 127 a , semiconductor laser 27 a , module 177 a , and semiconductor laser 27 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a and passed through the beam splitter 77 c , may be inserted between the beam splitters 77 c and 77 b , if necessary, in order that the light is reflected by the beam splitter 77 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a and reflected by the beam splitter 77 b , may be inserted between the beam splitters 77 b and 77 a , if necessary in order that the light passes through the beam splitter 77 a.

In the present embodiment in which the module 177 a , semiconductor laser 27 a , semiconductor laser 27 b , and photodetector 127 a are respectively replaced with the photodetector 127 a , semiconductor laser 27 a , semiconductor laser 27 b , and module 177 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a and passed through the beam splitter 77 c , may be inserted between the beam splitters 77 c and 77 b , if necessary, in order that the light is reflected by the beam splitter 77 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 27 a and 27 b and reflected by the beam splitter 77 b , may be inserted between the beam splitters 77 b and 77 a , if necessary, in order that the light passes through the beam splitter 77 a.

In the twenty-seventh embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 27 a and 27 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 27 a and 27 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 177 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 177 a , and the photodetector 127 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers 27 a and 27 b.

Twenty-Eighth Embodiment

FIG. 28 shows the twenty-eighth embodiment of the optical head apparatus according to the present invention, the modules 178 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 178 a is 400 nm. The wavelengths of the semiconductor lasers 28 a and 28 b are 660 nm and 780 nm, respectively. The beam splitter D is used as a beam splitter 78 a . Any of the beam splitters S, V, and Y is used as a beam splitter 78 b . Any of the beam splitters B, F, N, H, P, and U is used as a beam splitter 78 c.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 178 a passes through the beam splitter 78 d and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 78 a and is received by the photodetector in the module 178 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 28 a is reflected by the beam splitter 78 a and enters, as P-polarized, into the beam splitter 78 b . Almost all of the light passes through the beam splitter 78 b and is reflected by the beam splitter 78 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 78 a and enters, as S-polarized, into the beam splitter 78 b . Almost all or the light is reflected therefrom and is received by the photodetector 128 a.

In case of using any of the beam splitters H, P, and U as the beam splitter 78 c , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a and reflected by the beam splitter 78 c , may be inserted between the beam splitters 78 c and 78 b , in order that the light passes through the beam splitter 78 b.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 28 b enters, as P-polarized, into the beam splitter 78 c . Almost all of the light passes through the beam splitter 78 c and enters, as P-polarized, into the beam splitter 78 b . About 50% of the light passes through the beam splitter 78 b . Almost all of the light is then reflected by the beam splitter 78 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 78 a , and enters, as S-polarized, into the beam splitter 78 b . About 50% of the light is reflected therefrom and is received by the photodetector 128 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 400 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter D is used as the beam splitter 70 a . Any of the beam splitters S, V, and Y is used as the beam splitter 78 b . Any of the beam splitters C, E, M, K, O, and X is used as the beam splitter 78 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 660 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter E is used as the beam splitter 78 a . Any of the beam splitters T, W, and Y is used as the beam splitter 78 b . Any of the beam splitters A, F, P, G, N, and U is used as the beam splitter 78 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 660 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter E is used as the beam splitter 78 a . Any of the beam splitters T, W, and Y is used as the beam splitter 78 b . Any of the beam splitters C, D, O, J, M, and X is used as the beam splitter 78 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 780 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter F is used as the beam splitter 78 a . Any of the beam splitters U, X, and Y is used as the beam splitter 78 b . Any of the beam splitters A, E, R, K, P, V, G, M, T, U, X, and Y is used as the beam splitter 78 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 780 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter F is used as the beam splitter 78 a . Any of the beam splitters U, X, and Y is used as the beam splitter 78 b . Any of the beam splitters B, D, Q, J, N, W, H, O, S, U, X, and Y is used as the beam splitter 78 c.

Further, the modules 178 a , semiconductor lasers 28 a and 28 b , and photodetector 128 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the module 178 a , photodetector 128 a , semiconductor laser 28 b , and semiconductor laser 28 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 a , reflected by the disk 204 , and passed through the beam splitter 76 b , may be inserted between the beam splitters 78 b and 78 c , if necessary, in order that the light is reflected by the beam splitter 78 c.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the semiconductor laser 28 b , semiconductor laser 28 a , photodetector 128 a , and module 178 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 b , reflected by the disk 204 , and reflected by the beam splitter 78 a , may be inserted between the beam splitters 78 a and 78 b , if necessary, in order that the light passes through the beam splitter 78 b.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the semiconductor laser 28 a or 28 b , module 178 a , photodetector 128 a , and semiconductor laser 28 b or 29 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a or 28 b , reflected by the disk 204 , and reflected by the beam splitter 78 a , may be inserted between the beam splitters 78 a and 78 b , if necessary, in order that the light passes through the beam splitter 78 b.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the semiconductor laser 28 a , photodetector 128 a , semiconductor laser 28 b , and module 178 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a , reflected by the disk 204 , and reflected by the beam splitter 78 a , may be inserted between the bean splitters 78 a and 78 b , if necessary, in order that the light passes through the beam splitter 78 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a , reflected by the disk 204 , and passed through the beam splitter 78 b , may be inserted between the beam splitters 78 b and 78 c , if necessary, in order that the light is reflected by the beam splitter 78 c.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the semiconductor laser 28 a or 28 b , photodetector 128 a , module 178 a , and semiconductor laser 28 b or 28 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a or 28 b , reflected by the disk 204 , and reflected by the beam splitter 78 a , may be inserted between the beam splitters 78 a and 78 b , if necessary, in order that the light passes through the beam splitter 78 b . In addition, a half wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a and 28 b , reflected by the disk 204 , and passed through the beam splitter 78 b , may be inserted between the beam splitters 78 b and 78 c , if necessary, in order that the light is reflected by the beam splitter 78 c.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the semiconductor laser 28 b , semiconductor laser 28 a , module 178 a , and photodetector 128 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a and reflected from the beam splitter 78 c , may be inserted between the beam splitters 78 c and 78 b , if necessary, in order that the light passes through the beam splitter 78 b.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the photodetector 128 a , module 178 a , semiconductor laser 28 b , and semiconductor laser 28 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 26 b and passed through the beam splitter 78 b , may be inserted between the beam splitters 78 b and 78 a , if necessary, in order that the light is reflected by the beam splitter 78 a.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the photodetector 128 a , semiconductor laser 28 a , module 178 a , and semiconductor laser 28 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 20 a and reflected by the beam splitter 78 c , may be inserted between the beam splitters 78 c and 78 b , if necessary, in order that the light passes through the beam splitter 78 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a and passed through the beam splitter 78 b , may be inserted between the beam splitters 78 b and 78 a , if necessary, in order that the light is reflected by the beam splitter 78 a.

In the present embodiment in which the module 178 a , semiconductor laser 28 a , semiconductor laser 28 b , and photodetector 128 a are respectively replaced with the photodetector 128 a , semiconductor laser 28 a , semiconductor laser 28 b , and module 178 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 28 a and reflected by the beam splitter 78 c , may be inserted between the beam splitters 78 c and 78 b , if necessary, in order that the light passes through the beam splitter 78 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 28 a and 28 b and passed through the beam splitter 78 b , may be inserted between the beam splitters 78 b and 78 a , if necessary, in order that the light is reflected by the beam splitter 78 a.

In the twenty-eighth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 28 a and 28 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 28 a and 28 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 178 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 178 a , and the photodetector 128 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers 28 a and 28 b.

Twenty-Ninth Embodiment

FIG. 29 shows the twenty-ninth embodiment of the optical head apparatus according to the present invention. The modules 179 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 179 a is 400 nm. The wavelengths of the semiconductor lasers 29 a and 29 b are 660 nm and 780 nm, respectively. The beam splitter P is used as a beam splitter 79 a . Any of the beam splitters A, E, R, K, P, and V, is used as a beam splitter 79 b . Any of the beam splitters I, R, T, S, V and Y is used as a beam splitter 79 c.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 179 a is reflected by the beam splitter 79 b and by the beam splitter 79 a , and is further reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in) the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 79 a and by the beam splitter 79 b , and is received by the photodetector in the module 179 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 29 a passes through the beam splitter 79 b and enters, as S-polarized, into the beam splitter 79 a . Almost all of the light is reflected therefrom. The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . The light enters, as P-polarized, into the beam splitter 79 a . Almost all of the light passes through the beam splitter 79 a and enters, as P-polarized, into the beam splitter 79 c . Almost all of the light passes through the beam splitter 79 c and is received by the photodetector 129 a.

In case of using any of the beam splitters K, P, and V as the beam splitter 79 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 a and passed through the beam splitter 79 b , may be inserted between the beam splitters 79 b and 79 a , in order that the light is reflected by the beam splitter 79 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 29 b enters, as S-polarized, into the beam splitter 79 c . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 79 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 79 a , and enters, as P-polarized, into the beam splitter 79 c . About 50% of the light passes through the beam splitter 79 c and is received by the photodetector 129 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 179 a may be 400 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter R is used as the beam splitter 79 a . Any of the beam splitters A, F, and P is used as the beam splitter 79 b . Any of the beam splitters H, P, and U is used as the beam splitter 79 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 179 a may be 660 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter N is used as the beam splitter 79 a . Any of the beam splitters B, D, Q, J, N, and W is used as the beam splitter 79 b . Any of the beam splitters I, Q, S, T, W and Y is used as the beam splitter 79 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the modulo 179 a may be 660 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter Q is used as the beam splitter 79 a . Any of the beam splitters B, F, and N is used as the beam splitter 79 b . Any of the beam splitters G, N, and U is used as the beam splitter 79 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 179 a may be 780 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter M is used as the beam splitter 79 a . Any of the beam splitters C, D, O, J, M, and X is used as the beam splitter 79 b . Any of the beam splitters H, O, S, U, X, and Y is used as the beam splitter 79 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 179 a may be 780 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter O is used as the beam splitter 79 a . Any of the beam splitters C, E, M, K, O, and X is used as the beam splitter 79 b . Any of the beam splitters G, M, T, U, X, and Y is used as the beam splitter 79 c.

Further, the modules 179 a , semiconductor lasers 29 a and 29 b , and photodetector 129 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the semiconductor laser 29 a or 29 b , module 179 a , photodetector 129 a , and semiconductor laser 29 b or 29 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 a or 29 b , reflected by the disk 204 , and passed through the beam splitter 79 a , may be inserted between the beam splitters 79 a and 79 c , if necessary, in order that the light is reflected by the beam splitter 79 c.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the semiconductor laser 29 a or 29 b , photodetector 129 a , module 179 a , and semiconductor laser 29 b or 29 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 b or 29 a , reflected by the disk 204 , and reflected by the beam splitter 79 c , may be inserted between the beam splitters 79 a and 79 b , if necessary, in order that the light passes through the beam splitter 79 b.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the photodetector 129 a , semiconductor laser 29 a , semiconductor laser 29 b , and module 179 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 b and reflected by the beam splitter 79 c , may be inserted between the beam splitters 79 c and 79 a , if necessary, in order that the light passes through the beam splitter 79 a.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the semiconductor laser 29 b , semiconductor laser 29 a , module 179 a , and photodetector 129 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 a and passed through the beam splitter 79 b , may be inserted between the beam splitters 79 b and 79 a , if necessary, in order that the light is reflected by the beam splitter 79 a.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the photodetector 129 a , module 179 a , semiconductor laser 29 b , and semiconductor laser 29 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 b and reflected by the beam splitter 79 c , may be inserted between the beam splitters 79 c and 79 a , if necessary, in order that the light passes through the beam splitter 79 a.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the module 179 a , semiconductor laser 29 a , photodetector 129 a , and semiconductor laser 29 b , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 a , reflected by the disk 204 , and passed through the beam splitter 79 a , may be inserted between the beam splitters 79 a and 79 c , if necessary, in order that the light is reflected by the beam splitter 79 c . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 a and passed through the beam splitter 79 b , may be inserted between the beam splitters 79 b and 79 a , if necessary, in order that the light is reflected by the beam splitter 79 a.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the semiconductor laser 29 a , photodetector 129 a , semiconductor laser 29 b , and module 179 a , A half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 b , reflected by the disk 204 , and reflected by the beam splitter 79 a , may be inserted between the beam splitters 79 a and 79 b , if necessary, in order that the light passes through the beam splitter 79 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 b and reflected by the beam splitter 79 c , may be inserted between the beam splitters 79 c and 79 a , if necessary, in order that the light passes through the beam splitter 79 a.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the semiconductor laser 29 b , semiconductor laser 29 a , photodetector 129 a , and module 179 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 29 a and 29 b , reflected by the disk 204 , and passed through the beam splitter 79 a , may be inserted between the beam splitters 79 a and 79 c , if necessary, in order that the light is reflected by the beam splitter 79 c . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 29 a and passed through the beam splitter 79 b , may be inserted between the beam splitters 79 b and 79 a , if necessary, in order that the light is reflected by the beam splitter 79 a.

In the present embodiment in which the module 179 a , semiconductor laser 29 a , semiconductor laser 29 b , and photodetector 129 a are respectively replaced with the module 179 a , photodetector 129 a , semiconductor laser 29 b , and semiconductor laser 29 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor lasers 29 a and 29 b , reflected by the disk 204 , and reflected by the beam splitter 79 a , may be inserted between the beam splitters 79 a and 79 b , if necessary, in order that the light passes through the beam splitter 79 b . In addition, a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 29 b and reflected by the beam splitter 79 c , may be inserted between the beam splitters 79 c and 79 a , if necessary, in order that the light passes through the beam splitter 79 a.

In the twenty-ninth embodiment of the optical head apparatus according to the present invention, the semiconductor lasers 29 a and 29 b are not integrated with other light sources or photodetectors. Therefore, the semiconductor lasers 29 a and 29 b can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light sources, and photodetector is only four. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 179 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser integrated also in the module 179 a , and the photodetector 129 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers 29 a and 29 b.

11. Thirtieth and Thirty-First Embodiments

Type 9

The thirtieth and thirty-first embodiments of the optical head apparatus according to the present invention each have three modules. However, the three modules each integrate one light source and one photodetector.

Thirtieth Embodiment

FIG. 30 shows the thirtieth embodiment of the optical head apparatus according to the present invention. The modules 180 a , 180 b , and 180 c each integrate one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c are 780 nm, 660 nm, and 400 nm, respectively. The beam splitter C is used as a beam splitter 80 a . Any of the beam splitters B, D, and Q is used as a beam splitter 80 b . Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 180 c passes through the beam splitters 80 b and 80 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitters 80 a and 80 b , and is received by the photodetector in the module 180 c.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser integrated in the module 180 b is reflected by the beam splitter 80 b , and passes through the beam splitter 80 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 80 a and is reflected by the beam splitter 80 b . The light is then received by the photodetector in the module 180 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser in the module 180 a is reflected by the beam splitter 80 a and is further reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 80 a and is received by the photodetector in the module 180 a.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 80 a . Any of the beam splitters C, D, and O is used as the beam splitter 80 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 80 a . Any of the beam splitters A, E, and R is used as the beam splitter 80 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 80 a . Any of the beam splitters C, E, and M is used as the beam splitter 80 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 80 a . Any of the beam splitters A, F, and P is used as the beam splitter 80 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 400 nm, 660 nm, and 780 nm, respectively. At this time, the beam splitter A is used as the beam splitter 80 a . Any of the beam splitters B, F, and N is used as the beam splitter 80 b.

In the thirtieth embodiment of the optical head apparatus according to the present invention, only three modules are used and no light source or photodetector is required. Therefore, the optical head apparatus can be downsized. Further, the photodetectors in the modules 180 a , 180 b , and 180 c can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers in the modules 180 a , 180 b , and 180 c.

Thirty-First Embodiment

FIG. 31 shows the thirty-first embodiment of the optical head apparatus according to the present invention. The modules 181 a , 181 b , and 181 c each integrate one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 181 a , 181 b , and 181 c are 780 nm, 660 nm, and 400 nm, respectively. The beam splitter F is used as a beam splitter 81 a . Any of the beam splitters A, E, and R is used as a beam splitter 81 b.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 181 c is reflected by the beam splitters 81 b and 81 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitters 81 a and then 81 b , and is received by the photodetector in the module 181 c.

Light having a wavelength of 660 nm and emitted from the semiconductor laser in the module 181 b passes through the beam splitter 81 b and is reflected by the beam splitter 81 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 81 a and passes through the beam splitter 81 b . The light is then received by the photodetector in the module 181 b.

Almost all of light having a wavelength of 780 nm and emitted from the semiconductor laser in the module 181 a passes through the beam splitter 81 a and is reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 81 a and is received by the photodetector in the module 181 a.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 181 a , 181 b , and 181 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter E is used as the beam splitter 81 a . Any of the beam splitters A, F, and P is used as the beam splitter 81 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 181 a , 181 b , and 181 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter F is used as the beam splitter 81 a . Any of the beam splitters B, D, and Q is used as the beam splitter 81 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 181 a , 181 b , and 181 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter D is used as the beam splitter 81 a . Any of the beam splitters B, F, and N is used as the beam splitter 81 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 181 a , 181 b , and 181 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter E is used as the beam splitter 81 a . Any of the beam splitters C, D, and O is used as the beam splitter 81 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 181 a , 181 b , and 181 c may be 400 nm, 660 nm, and 780 nm, respectively. At this time, the beam splitter D is used as the beam splitter 81 a . Any of the beam splitters C, B, and M is used as the beam splitter 81 b.

In the thirty-first embodiment of the optical head apparatus according to the present invention, only three modules are used and no light source or photodetector is required. Therefore, the optical head apparatus can be downsized. Further, the photodetectors in the modules 181 a , 181 b , and 181 c can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers in the modules 181 a , 181 b , and 181 c.

12. Thirty-Second and Thirty-Third Embodiments

Type 10

The thirty-second and thirty-third embodiments of the optical head apparatus according to the present invention each have one light source, one photodetector, and one module. However, the one light source integrates two light sources. The one module integrates one light source and one photodetector.

Thirty-Second Embodiment

FIG. 32 shows the thirty-second embodiment of the optical head apparatus according to the present invention. The module 182 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The semiconductor laser 32 a integrates two semiconductor lasers. The structure of the laser will be described later with reference to FIG. 72 . The wavelength of the semiconductor laser integrated in the module 182 a is 400 nm, and the wavelengths of the semiconductor laser 32 a are 660 nm and 780 nm. The beam splitter A is used as a beam splitter 82 a . Any of the beam splitters S, V, and Y is used as a beam splitter 82 b.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 182 a is reflected by the beam splitters 82 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 82 a , and is received by the photodetector in the module 182 a.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 32 a enters, as S-polarized, into the beam splitter 82 b , and is reflected therefrom. Almost all of the light passes through the beam splitter 82 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 82 a and enters, as P-polarized, into the beam splitter 82 b . Almost all of the light passes through the beam splitter 82 b and is then received by the photodetector 132 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 32 a enters, as S-polarized, into the beam splitter 82 b . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 82 a . The light is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 82 a and enters, as P-polarized, into the beam splitter 82 b . About 50% of the light passes through the beam splitter 82 b and is received by the photodetector 132 a.

In the present embodiment, the wavelength of the semiconductor laser in the module 182 a may be 660 nm and the wavelengths of the semiconductor laser 32 a may be 400 nm and 780 nm. At this time, the beam splitter B is used as the beam splitter 82 a . Any of the beam splitters T, W, and Y is used as the beam splitter 82 b.

In the present embodiment, the wavelength of the semiconductor laser in the module 182 a may be 780 nm and the wavelengths of the semiconductor laser 32 a may be 400 nm and 660 nm. At this time, the beam splitter C is used as the beam splitter 82 a . Any of the beam splitters U, X and Y is used as the beam splitter 82 b.

Further, the module 182 a , semiconductor laser 32 a , and photodetector 132 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 182 a , semiconductor laser 32 a , and photodetector 132 a are respectively replaced with the semiconductor laser 32 a , photodetector 132 a , and module 182 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 32 a , reflected by the disk 204 , and passed through the team splitter 82 a , may be inserted between the beam splitters 82 a and 82 b , if necessary, in order that the light is reflected by the beam splitter 82 b.

In the present embodiment in which the module 182 a , semiconductor laser 32 a , and photodetector 132 a are respectively replaced with the photodetector 132 a , semiconductor laser 32 a , and module 182 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 32 a and reflected by the beam splitter 82 b , may be inserted between the beam splitters 82 b and 82 a , if necessary, in order that the light passes through the beam splitter 82 a.

In the thirty-second embodiment of the optical head apparatus according to the present invention, the total number of elements, i.e., the module, light source, and photodetector is only three. Therefore, the optical head apparatus can be downsized. In addition, the photodetector in the module 182 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser in the module 182 a , and the photodetector 132 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 32 a.

Thirty-Third Embodiment

FIG. 33 shows the thirty-third embodiment of the optical head apparatus according to the present invention. The module 183 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The semiconductor laser 33 a integrates two semiconductor lasers. The structure of the laser will be described later with reference to FIG. 72 . The wavelength of the semiconductor laser integrated in the module 183 a is 400 nm, and the wavelengths of the semiconductor laser 33 a are 660 nm and 780 nm. The beam splitter D is used as a beam splitter 83 a . Any of the beam splitters S, V and Y is used as a beam splitter 83 b.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 183 a passes through the beam splitter 83 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 83 a , and is received by the photodetector in the module 183 a.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 33 a enters, as P-polarized, into the beam splitter 83 b . Almost all of the light passes through the beam splitter 83 b and is then reflected by the beam splitter 83 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 83 a and enters, as S-polarized, into the beam splitter 83 b . Almost all of the light is reflected therefrom and is then received by the photodetector 133 a.

Light having a wavelength of 780 nm and emitted from the semiconductor laser 33 a enters, as P-polarized, into the beam splitter 83 b . About 50% of the light passes through the beam splitter 63 b . Almost all of the light is reflected by the beam splitter 93 a . The light is then reflected by the mirror 201 . The light is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 83 a and enters, as S-polarized, into the beam splitter 83 b . About 50% of the light is reflected therefrom and is received by the photodetector 133 a.

In the present embodiment, the wavelength of the semiconductor laser in the module 183 a may be 660 nm and the wavelengths of the semiconductor laser 33 a may be 400 nm and 780 nm. At this time, the beam splitter E is used as the beam splitter 63 a . Any of the beam splitters T, W, and Y is used as the beam splitter 83 b.

In the present embodiment, the wavelength of the semiconductor laser in the module 183 a may be 780 nm and the wavelengths of the semiconductor laser 33 a may be 400 nm and 660 nm. At this time, the beam splitter F is used as the beam splitter 83 a . Any of the beam splitters U, X, and Y is used as the beam splitter 83 b.

Further, the module 183 a , semiconductor laser 33 a , and photodetector 133 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 183 a , semiconductor laser 33 a , and photodetector 133 a are respectively replaced with the semiconductor laser 33 a , photodetector 133 a , and module 183 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 33 a , reflected by the disk 204 , and reflected by the beam splitter 83 a , may be inserted between the beam splitters 83 a and 83 b , if necessary, in order that the light passes through the beam splitter 83 b.

In the present embodiment in which the module 183 a , semiconductor laser 33 a , and photodetector 133 a are respectively replaced with the photodetector 133 a , semiconductor laser 33 a , and module 183 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 33 a and passed through the beam splitter 83 b , may be inserted between the beam splitters 83 b and 83 a , if necessary, in order that the light is reflected by the beam splitter 83 a.

In the thirty-third embodiment of the optical head apparatus according to the present invention, the total number of elements, i.e., the module, light source, and photodetector is only three. Therefore, the optical head apparatus can be downsized. In addition, the photodetector in the module 183 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser in the module 183 a , and the photodetector 133 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 33 a.

13. Thirty-Fourth and Thirty-Fifth Embodiments

Type 11

The thirty-fourth and thirty-fifth embodiments of the optical head apparatus according to the present invention each have one light source, one photodetector, and one module. However, the module integrates two light sources and one photodetector.

Thirty-Fourth Embodiment

FIG. 34 shows the thirty-fourth embodiment of the optical head apparatus according to the present invention. The module 184 a integrates two semiconductor lasers and one photodetector the structure of the module will be described later with reference to FIG. 75 . The wavelengths of the semiconductor lasers integrated in the module 184 a are 660 nm and 780 nm, and the wavelength of the semiconductor laser 34 a is 400 nm. The beam splitter D is used as a beam splitter 84 a . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as a beam splitter 84 b.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 34 a enters, as S-polarized, into the beam splitter 84 b . Almost all of the light passes through the beam splitter 84 b and then passes through the beam splitter 84 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 84 a , and enters, as P-polarized, into the beam splitter 84 b . Almost all of the light passes through the beam splitter 84 b and is then received by the photodetector 134 a.

Almost all of light having a wavelength of 660 nm or light having a wavelength of 780 nm, emitted from any of the semiconductor lasers in the module 184 a , is reflected by the beam splitter 84 a and is reflected by the mirror 201 . The light is then transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard or the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 84 a and is then received by the photodetector in the module 184 a.

In the present embodiment, the wavelengths of the semiconductor lasers in the module 184 a may be 400 nm and 780 nm and the wavelength of the semiconductor laser 34 a may be 660 nm. At this time, the beam splitter E is used as the beam splitter 84 a . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 84 b.

In the present embodiment, the wavelengths of the semiconductor lasers in the module 184 a may be 400 nm and 660 nm and the wavelength of the semiconductor laser 34 a may be 780 nm. At this time, the beam splitter F is used as the beam splitter 84 a . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 84 b.

Further, the module 184 a , semiconductor laser 34 a , and photodetector 134 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 184 a , semiconductor laser 34 a , and photodetector 134 a are respectively replaced with the semiconductor laser 34 a , photodetector 134 a , and module 184 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 34 a , reflected by the disk 204 , and passed through the beam splitter 84 a , may be inserted between the beam splitters 84 a and 84 b , if necessary, in order that the light is reflected by the beam splitter 84 b.

In the present embodiment in which the module 184 a , semiconductor laser 34 a , and photodetector 134 a are respectively replaced with the photodetector 134 a , semiconductor laser 34 a , and module 184 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 34 a and reflected by the beam splitter 84 b , may be inserted between the beam splitters 84 b and 84 a , if necessary, in order that the light passes through the beam splitter 84 a.

In the thirty-fourth embodiment of the optical head apparatus according to the present invention, the semiconductor laser 34 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor laser 34 a can have a high heat radiation characteristic. In addition, the total number of elements, i.e., the module, light source, and photodetector is only three. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 184 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers integrated also in the module 184 a , and the photodetector 134 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 34 a.

Thirty-Fifth Embodiment

FIG. 35 shows the thirty-fifth embodiment of the optical head apparatus according to the present invention. The module 185 a integrates two semiconductor lasers and one photodetector. The structure of the module will be described later with reference to FIG. 75 . The wavelengths of the semiconductor lasers integrated in the module 185 a are 660 nm and 780 nm, and the wavelength of the semiconductor laser 35 a is 400 nm. The beam splitter A is used as a beam splitter 85 a . Any of the beam splitters G, J, M, N, T, U, W, X and Y is used as a beam splitter 85 b.

Light having a wavelength of 400 nm and emitted from the semiconductor laser 35 a enters, as P-polarized, into the beam splitter 85 b . Almost all of the light passes through the beam splitter 85 b and is reflected by the beam splitter 85 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 85 a , and enters, as S-polarized, into the beam splitter 85 b . Almost all of the light is reflected therefrom and is then received by the photodetector 135 a.

Almost all of light having a wavelength of 660 nm or light having a wavelength of 780 nm, emitted from any of the semiconductor lasers in the module 185 a , passes through the beam splitter 85 a and is reflected by the mirror 201 . The light is then transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard or the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 85 a and is then received by the photodetector in the module 185 a.

In the present embodiment, the wavelengths of the semiconductor lasers in the module 185 a may be 400 nm and 780 nm and the wavelength of the semiconductor laser 35 a may be 660 nm. At this time, the beam splitter B is used as the beam splitter 85 a . Any of the beam splitters H, K, O, P, S, U, V, X and Y is used as the beam splitter 85 b.

In the present embodiment, the wavelengths of the semiconductor lasers in the module 185 a may be 400 nm and 660 nm and the wavelength of the semiconductor laser 35 a may be 780 nm. At this time, the beam splitter C is used as the beam splitter 85 a . Any of the beam splitters I, L, Q, R, S, T, V, W and Y is used as the beam splitter 85 b.

Further, the module 185 a , semiconductor laser 35 a , and photodetector 135 a can be replaced with each other, in the present embodiment.

In the present embodiment in which the module 185 a , semiconductor laser 35 a , and photodetector 135 a are respectively replaced with the semiconductor laser 35 a , photodetector 135 a , and module 185 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 35 a , reflected by the disk 204 , and reflected by the beam splitter 85 a , may be inserted between the beam splitters 85 a and 85 b , if necessary, in order that the light passes through the beam splitter 85 b.

In the present embodiment in which the module 185 a , semiconductor laser 35 a , and photodetector 135 a are respectively replaced with the photodetector 135 a , semiconductor laser 35 a , and module 185 a , a half-wave plate for turning, by 90°, the polarization direction of the light which has been emitted from the semiconductor laser 35 a and passed through the beam splitter 85 b , may be inserted between the beam splitters 85 b and 85 a , if necessary, in order that the light is reflected by the beam splitter 85 a.

In the thirty-fifth embodiment of the optical head apparatus according to the present invention, the semiconductor laser 35 a is not integrated with other light sources or photodetectors. Therefore, the semiconductor laser 35 a can have a high heat radiation characteristic In addition, the total number of elements, i.e., the module, light source, and photodetector is only three. Therefore, the optical head apparatus can be downsized. Further, the photodetector integrated in the module 185 a can be designed to have an optimal sensitivity or the like for the wavelengths of the semiconductor lasers integrated also in the module 185 a , and the photodetector 135 a can be designed to have an optimal sensitivity or the like for the wavelength of the semiconductor laser 35 a.

14. Thirty-Sixth Embodiment

Type 12

The thirty-sixth embodiment of the optical head apparatus according to the present invention has two modules. However, one of the two modules integrates two light sources and one photodetector. The other one of the two modules integrates one light source and one photodetector.

FIG. 36 shows the thirty-sixth embodiment of the optical head apparatus according to the present invention The module 186 b integrates two semiconductor lasers and one photodetector. The structure of the module will be described later with reference to FIG. 75 . The module 186 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 186 a is 400 nm, and the wavelengths of the semiconductor lasers integrated in the module 186 b are 660 nm and 780 nm. The beam splitter A is used as a beam splitter 86 a.

Almost all of light having a wavelength of 400 nm and emitted from the semiconductor laser in the module 186 a is reflected by the beam splitter 86 a and is reflected by the mirror 201 . The light is then transformed into circularly polarized light from linearly polarized light by a wavelength plate 202 , and is converged on a disk 204 according to the next-generation standard by an objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from the circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 86 a , and is then received by the photodetector in the module 186 a.

Almost all of light having a wavelength of 660 nm or light having a wavelength of 780 nm, emitted from any of the semiconductor lasers in the module 186 b , passes through by the beam splitter 86 a and is reflected by the mirror 201 . The light is then transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard or the CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 86 a and is then received by the photodetector in the module 186 b.

In the present embodiment, the wavelength of the semiconductor laser in the module 186 a may be 660 nm, and the wavelengths of the semiconductor lasers in the module 186 b may be 400 nm and 780 nm. At this time, the beam splitter B is used as the beam splitter 86 a.

In the present embodiment, the wavelength of the semiconductor laser in the module 186 a may be 780 nm, and the wavelengths of the semiconductor lasers in the module 186 b may be 400 nm and 660 nm. At this time, the beam splitter C is used as the beam splitter 86 a.

In the present embodiment, the module 186 a may be a module which integrates two semiconductor lasers and one photodetector, and the module 186 b may be a module which integrates one semiconductor laser and one photodetector. The wavelengths of the semiconductor lasers in the module 186 a may be 660 nm and 780 nm, and the wavelength of the semiconductor laser in the module 186 b may be 400 nm. At this time, the beam splitter D is used as the beam splitter 86 a.

In the present embodiment, the module 186 a may be a module which integrates two semiconductor lasers and one photodetector, and the module 186 b may be a module which integrates one semiconductor laser and one photodetector. The wavelengths of the semiconductor lasers in the module 186 a may be 400 nm and 780 nm, and the wavelength of the semiconductor laser in the module 186 b may be 660 nm. At this time, the beam splitter E is used as the beam splitter 86 a.

In the present embodiment, the module 186 a may be a module which integrates two semiconductor lasers and one photodetector, and the module 186 b may be a module which integrates one semiconductor laser and one photodetector. The wavelengths of the semiconductor lasers in the module 186 a may be 400 nm and 660 nm, and the wavelength of the semiconductor laser in the module 186 b may be 780 nm. At this time, the beam splitter F is used as the beam splitter 86 a.

In the thirty-sixth embodiment of the optical head apparatus according to the present invention, only two modules are used and no light source or photodetector is required. Therefore, the optical head apparatus can be downsized. Further, the photodetectors integrated in the module 186 a and 186 b can respectively be designed to have optimal sensitivities or the like for the wavelengths of the semiconductor lasers integrated also in the modules 186 a and 186 b.

15. Thirty-Seventh Embodiment

Type 13

The thirty-sixth embodiment of the optical head apparatus according to the present invention has one module However, one module integrates three light sources and one photodetector.

FIG. 37 shows the thirty-seventh embodiment of the optical head apparatus according to the present invention. The module 187 a integrates three semiconductor lasers and one photodetector. The structure of the module will be described later with reference to FIG. 76 . The wavelengths of the semiconductor lasers integrated in the module 187 a are 400 nm, 660 nm, and 780 nm.

Light having a wavelength of 400 nm, 660 nm, or 780 nm, emitted from any of the semiconductor lasers in the module 187 a , is reflected by the mirror 201 . The light is then transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the next-generation standard, DVD standard, or CD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 and is further received by the photodetector in the module 187 a.

In the thirty-seventh embodiment of the optical head apparatus according to the present invention, only one module is used and no light source or photodetector is required. Therefore, the optical head apparatus can be downsized.

16. Thirty-Eighth to Forty-First Embodiment

Type 14

The thirty-eighth to forty-first embodiments of the optical head apparatus according to the present invention each have three light sources and two photodetectors.

Thirty-Eighth Embodiment

The thirty-eighth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 1 . The wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c are 780 nm, 660 nm, and 400 nm, respectively. The beam splitter D is used as a beam splitter 51 a . Any of the beam splitters k, o, and x is used as a beam splitter 51 b . Any of the beam splitters L, Q, W, s, v, and y is used as a beam splitter 51 c . Any of the beam splitters G, J, M, N, T, u, W, x and y is used as a beam splitter 51 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the first embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 1 b enters, as P-polarized, into the beam splitter 51 b . About 50% of the light passes through the beam splitter 51 b . Almost all of the light is reflected by the beam splitter 51 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 51 a and enters, as S-polarized, into the beam splitter 51 b . About 50% of the light is reflected therefrom, and enters, as S-polarized, into the beam splitter 51 c . Almost all of the light is reflected therefrom, and is received by the photodetector 101 a.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter D is used as the beam splitter 51 a . Any of the beam splitters L, Q, and W is used as the beam splitter 51 b . Any of the beam splitters k, o, and x is used as the beam splitter 51 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 51 d.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 51 a . Any of the beam splitters J, M, and x is used as the beam splitter 51 b . Any of the beam splitters L, R, v, T, W, and y is used as the beam splitter 51 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 51 d.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 51 a . Any of the beam splitters L, R, and V is used as the beam splitter 51 b . Any of the beam splitters J, M, and x is used as the beam splitter 51 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 51 d.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 51 a . Any of the beam splitters J, N, and W is used as the beam splitter 51 b . Any of the beam splitters k, p, v, u, x and y is used as the beam splitter 51 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 51 d.

In the present embodiment, the wavelengths of the semiconductor lasers 1 a , 1 b , and 1 c may be 400 nm, 660 nm, and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 51 a . Any of the beam splitters k, p, and v is used as the beam splitter 51 b . Any of the beam splitters J, N, W, u, x and y is used as the beam splitter 51 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 51 d.

Further, the semiconductor laser 1 c and the photodetector 101 b can be replaced with each other, in the present embodiment. In addition, one of the semiconductor lasers 1 a and 1 b can be replaced with the photodetector 101 a , in the present embodiment.

In the thirty-eighth embodiment of the optical head apparatus according to the present invention has the same characteristics as the first embodiment.

Thirty-Ninth Embodiment

The thirty-ninth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 2 . The wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c are 780 nm, 660 nm, and 400 nm, respectively. The beam splitter D is used as a beam splitter 52 a . Any of the beam splitters h, p and u is used as a beam splitter 52 b . Any of the beam splitters I, R, T, s, v and y is used as a beam splitter 52 c . Any of the beam splitters G, J, M, N, T, u, W, x and y is used as a beam splitter 52 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the second embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 2 b enters, as S-polarized, into the beam splitter 52 b . About 50% of the light is reflected therefrom. Almost all of the light is reflected by the beam splitter 52 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 52 a and enters, as P-polarized, into the beam splitter 52 b . About 50% of the light passes through the beam splitter 52 b , and enters, as P-polarized, into the beam splitter 52 c . Almost all of the light passes through the beam splitter 52 c , and is received by the photodetector 102 a.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter D is used as the beam splitter 52 a . Any of the beam splitters I, R, and T is used as the beam splitter 52 b . Any of the beam splitters h, p, and u is used as the beam splitter 52 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 52 d.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 52 a . Any of the beam splitters G, N, and u is used as the beam splitter 52 b . Any of the beam splitters I, Q, s, T, W, and y is used as the beam splitter 52 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 52 d.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 52 a . Any of the beam splitters I, Q, and s is used as the beam splitter 52 b . Any of the beam splitters G, N, and u is used as the beam splitter 52 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 52 d.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 52 a . Any of the beam splitters G, M, and T is used as the beam splitter 52 b . Any of the beam splitters h, o, s, u, x and y is used as the beam splitter 52 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 52 d.

In the present embodiment, the wavelengths of the semiconductor lasers 2 a , 2 b , and 2 c may be 400 nm, 660 nm, and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 52 a . Any of the beam splitters h, o, and s is used as the beam splitter 52 b . Any of the beam splitters G, M, T, u, x and y is used as the beam splitter 52 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 52 d.

Further, the semiconductor laser 2 c and the photodetector 102 b can be replaced with each other, in the present embodiment. In addition, one of the semiconductor lasers 2 a and 2 b can be replaced with the photodetector 102 a , in the present embodiment.

In the thirty-ninth embodiment of the optical head apparatus according to the present invention has the same characteristics as the second embodiment.

Fortieth Embodiment

The fortieth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 3 . The wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter A is used as a beam splitter 53 a . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a bean splitter 53 b . Any of the beam splitters h, p, and u is used as a beam splitter 53 c . Any of the beam splitters I, R, T, s, v, and y is used as a beam splitter 53 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the third embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 3 b enters, as S-polarized, into the beam splitter 53 c . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 53 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 53 a and enters, as P-polarized, into the beam splitter 53 c . About 50% of the light passes through the beam splitter 53 c , and enters, as P-polarized, into the beam splitter 53 d . Almost all of the light passes through the beam splitter 53 d , and is received by the photodetector 103 b.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 53 a . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 53 b . Any of the beam splitters I, R and T is used as the beam splitter 53 c . Any of the beam splitters h, p, and u is used as the beam splitter 53 d.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 53 a . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 53 b . Any of the beam splitters G, N, and u is used as the beam splitter 53 c . Any of the beam splitters r, Q, s, T, W and y is used as the beam splitter 53 d.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 53 a . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 53 b . Any of the beam splitters I, Q, and s is used as the beam splitter 53 c . Any of the beam splitters G, N, and u is used as the beam splitter 53 d.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 53 a . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 53 b . Any of the beam splitters G, M, and T is used as the beam splitter 53 c . Any of the beam splitters h, o, s, u, x and y is used as the beam splitter 53 d.

In the present embodiment, the wavelengths of the semiconductor lasers 3 a , 3 b , and 3 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 53 a . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 53 b . Any of the beam splitters h, o, and s is used as the beam splitter 53 c . Any of the beam splitters C, M, T, u, x, and y is used as the beam splitter 53 d.

Further, the semiconductor laser 3 a and the photodetector 103 a can be replaced with each other, in the present embodiment. In addition, one of the semiconductor lasers 3 b and 3 c can be replaced with the photodetector 103 b in the present embodiment.

In the fortieth embodiment of the optical head apparatus according to the present invention has the same characteristics as the third embodiment.

Forty-First Embodiment

The forty-first embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 4 . The wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter A is used as a beam splitter 54 a . Any of the beam splitters G, J, M, N, T, u, W, x and y is used as a beam splitter 54 b . Any of the beam splitters k, o, and x is used as a beam splitter 54 c . Any of the beam splitters L, Q, W, s, v and y is used as a beam splitter 54 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the fourth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 4 b enters, as P-polarized, into the beam splitter 54 c . About 50% of the light passes through the beam splitter 54 c . Almost all of the light passes through the beam splitter 54 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 54 a and enters, as S-polarized, into the beam splitter 54 c . About 50% of the light is reflected therefrom, and enters, as S-polarized, into the beam splitter 54 d . Almost all of the light is reflected therefrom, and is received by the photodetector 104 b.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 54 a . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 54 b . Any of the beam splitters L, Q, and W is used as the beam splitter 54 c . Any of the beam splitters k, o, and x is used as the beam splitter 54 d.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 54 a . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 54 b . Any of the beam splitters J, M, and x is used as the beam splitter 54 c . Any of the beam splitters L, R, v, T, W, and y is used as the beam splitter 54 d.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 54 a . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 54 b . Any of the beam splitters L, R, and v is used as the beam splitter 54 c . Any of the beam splitters J, M, and x is used as the beam splitter 54 d.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 54 a . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 54 b . Any of the beam splitters J, N, and W is used as the beam splitter 54 c . Any of the beam splitters k, p, v, u, x, and y is used as the beam splitter 54 d.

In the present embodiment, the wavelengths of the semiconductor lasers 4 a , 4 b , and 4 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 54 a . Any of the beam splitters I, L, Q, R, s, T, v, w and y is used as the beam splitter 54 b . Any of the beam splitters k, p, and v is used as the beam splitter 54 c . Any of the beam splitters J, N, W, u, x and y is used as the beam splitter 54 d.

Further, the semiconductor laser 4 a and the photodetector 104 a can be replaced with each other, in the present embodiment. In addition, one of the semiconductor lasers 4 b and 4 c can be replaced with the photodetector 104 b , in the present embodiment.

In the forty-first embodiment of the optical head apparatus according to the present invention has the same characteristics as the fourth embodiment.

17. Forty-Second to Forty-Sixth Embodiments

Type 15

The forty-second to forty-sixth embodiments of the optical head apparatus according to the present invention each have three light sources and one photodetector.

Forty-Second Embodiment

The forty-second embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 5 . The wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter G is used as a beam splitter 55 a . Any of the beam splitters h and u is used as a beam splatter 55 b . Any of the beam splitters I, s, T and y is used as a beam splitter 55 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the fifth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 5 b enters, as S-polarized, into the beam splitter 55 b . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 55 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 55 a and enters, as P-polarized, into the beam splitter 55 b . About 50% of the light passes through the beam splitter 55 b , and enters, as P-polarized, into the beam splitter 55 c . Almost all of the light passes through the beam splitter 55 c , and is received by the photodetector 105 a.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter G is used as the beam splitter 55 a . Any of the beam splitters I and T is used as the beam splitter 55 b . Any of the beam splitters h and u is used as the beam splitter 55 c.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter h is used as the beam splitter 55 a . Any of the beam splitters G and u is used as the beam splitter 55 b . Any of the beam splitters I, s, T and y is used as the beam splitter 55 c.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter h is used as the beam splitter 55 a . Any of the beam splitters I and s is used as the beam splitter 55 b . Any of the beam splitters G and u is used as the beam splitter 55 c.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter I is used as the beam splitter 55 a . The beam splitter G is used as the beam splitter 55 b . Any of the beam splitters h and u is used as the beam splitter 55 c.

In the present embodiment, the wavelengths of the semiconductor lasers 5 a , 5 b , and 5 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter I is used as the beam splitter 55 a . The beam splitter h is used as the beam splitter 55 b . Any of the beam splitters G and u is used as the beam splitter 55 c.

Further, one of the semiconductor lasers 5 a , 5 b , and 5 c can be replaced with the photodetector 105 a , in the present embodiment.

In the forty-second embodiment of the optical head apparatus according to the present invention has the same characteristics as the fifth embodiment.

Forty-Third Embodiment

The forty-third embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 6 . The wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter J is used as a beam splitter 56 a . Any of the beam splitters k and x is used as a beam splitter 56 b . Any of the beam splitters L, v, W, and y is used as a beam splitter 56 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the sixth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 6 b enters, as P-polarized, into the beam splitter 56 b . About 50% of the light passes through the beam splitter 56 b . Almost all of the light is reflected by the beam splitter 56 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 56 a and enters, as S-polarized, into the beam splitter 56 b . About 50% of the light is reflected therefrom, and enters, as S-polarized, into the beam splitter 56 c . Almost all of the light is reflected therefrom, and is received by the photodetector 106 a.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter J is used as the beam splitter 56 a . Any of the beam splitters L and W is used as the beam splitter 56 b . Any of the beam splitters k and x is used as the beam splitter 56 c.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter k is used as the beam splitter 56 a . Any of the beam splitters J and x is used as the beam splitter 56 b . Any of the beam splitters L, v, W, and y is used as the beam splitter 56 c.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter k is used as the beam splitter 56 a . Any of the beam splitters L and v is used as the beam splitter 56 b . Any of the beam splitters J and x is used as the beam splitter 56 c.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter L is used as the beam splitter 56 a . The beam splitter J is used as the beam splitter 56 b . Any of the beam splitters k and x is used as the beam splitter 56 c.

In the present embodiment, the wavelengths of the semiconductor lasers 6 a , 6 b , and 6 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter L is used as the beam splitter 56 a . The beam splitter k is used as the beam splitter 56 b . Any of the beam splitters J and x is used as the beam splitter 56 c.

Further, one of the semiconductor lasers 6 a , 6 b , and 6 c can be replaced with the photodetector 106 a , in the present embodiment.

In the forty-third embodiment of the optical head apparatus according to the present invention has the same characteristics as the sixth embodiment.

Forty-Fourth Embodiment

The forty-fourth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 7 . The wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter G is used as a beam splitter 57 a . Any of the beam splitters s and y is used as a beam splitter 57 b . Any of the beam splitters C, E, M, k, O and x is used as a beam splitter 57 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the seventh embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 7 b passes through the beam splitter 57 c , and enters, as S-polarized, into the beam splitter 57 b . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 57 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 57 a and enters, as P-polarized, into the beam splitter 57 b . About 50% of the light passes through the beam splitter 57 b , and is received by the photodetector 107 a.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter G is used as the beam splitter 57 a . Any of the beam splitters s and y is used as the beam splitter 57 b . Any of the beam splitters B, F, N, h, p, and u is used as the beam splitter 57 c.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter h is used as the beam splitter 57 a . Any of the beam splitters T and y is used as the beam splitter 57 b . Any of the beam splitters C, D, o, J, M and x is used as the beam splitter 57 c.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter h is used as the beam splitter 57 a . Any of the beam splitters T and y is used as the beam splitter 57 b . Any of the beam splitters A, F, p, G, N and u is used as the beam splitter 57 c.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b and 7 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter I is used as the beam splitter 57 a . The beam splitter u is used as the beam splitter 57 b . Any of the beam splitters B, D, Q, h, o, s, J, N, W, u, x and y is used as the beam splitter 57 c.

In the present embodiment, the wavelengths of the semiconductor lasers 7 a , 7 b , and 7 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter I is used as the beam splitter 57 a . The beam splitter u is used as the beam splitter 57 b . Any of the beam splitters A, E, R, G, M, T, k, p, v, u, x and y is used as the beam splitter 57 c.

Further, one of the semiconductor lasers 7 a , 7 b and 7 c can be replaced with the photodetector 107 a , in the present embodiment.

The forty-fourth embodiment of the optical head apparatus according to the present invention has the same characteristics as the seventh embodiment.

Forty-Fifth Embodiment

The forty-fifth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 8 . The wavelengths of the semiconductor lasers 8 a , 8 b , and 8 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter J is used as a beam splitter 58 a . Any of the beam splitters v and y is used as a beam splitter 58 b . Any of the beam splitters B, F, N, h, p and u is used as a beam splitter 58 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the eighth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 8 b is reflected by the beam splitter 58 c , and enters, as P-polarized, into the beam splitter 58 b . About 50% of the light passes through the beam splitter 58 b . Almost all of the light is reflected by the beam splitter 58 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 58 a and enters, as S-polarized, into the beam splitter 58 b . About 50% of the light is reflected therefrom, and is received by the photodetector 108 a.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b and 8 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter J is used as the beam splitter 58 a . Any of the beam splitters v and y is used as the beam splitter 58 b . Any of the beam splitters C, E, M, k, o and x is used as the beam splitter 58 c.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b and 8 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter k is used as the beam splitter 58 a . Any of the beam splitters W and y is used as the beam splitter 58 b . Any of the beam splitters A, F, p, G, N and u is used as the beam splitter 58 c.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b and 8 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter k is used as the beam splitter 58 a . Any of the beam splitters W and y is used as the beam splitter 8 b . Any of the beam splitters C, D, o, J, M and x is used as the beam splitter 58 c.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b , and 8 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter L is used as the beam splitter 55 a . The beam splitter x is used as the beam splitter 58 b . Any of the beam splitters A, E, R, k, p, v, G, M, T, u, x and y is used as the beam splitter 58 c.

In the present embodiment, the wavelengths of the semiconductor lasers 8 a , 8 b and 8 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter L is used as the beam splitter 58 a . The beam splitter x is used as the beam splitter 58 b . Any of the beam splitters B, D, Q, J, N, W, h, o, s, u, x and y is used as the beam splitter 58 c.

Further, one of the semiconductor lasers 8 a , 8 b , and 8 c can be replaced with the photodetector 108 a , in the present embodiment.

The forty-fifth embodiment of the optical head apparatus according to the present invention has the same characteristics as the eighth embodiment.

Forty-Sixth Embodiment

The forty-sixth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 9 . The wavelengths of the semiconductor lasers 9 a , 9 b , and 9 c are 400 nm, 660 nm, and 780 nm, respectively. The beam splitter v is used as a beam splitter 59 a . Any of the beam splitters A, E, R, G, M, T, k, p, v, u, x and y is used as a beam splitter 59 b . Any of the beam splitters I, s, T and y is used as a beam splitter 59 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the ninth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 9 b passes through the beam splitter 59 b , and enters, as S-polarized, into the beam splitter 59 a . About 50% of the light is reflected therefrom. The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . The light enters, as P-polarized, into the beam splitter 59 a . About 50% of the light passes through the beam splitter 59 a , and enters, as P-polarized, into the beam splitter 59 c . Almost all of the light passes through the beam splitter 59 c and is then received by the photodetector 109 a.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b and 9 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter T is used as the beam splitter 59 a . Any of the beam splitters A, F, p, G, N and u is used as the beam splitter 59 b . Any of the beam splitters h and u is used as the beam splitter 59 c.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b and 9 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter u is used as the beam splitter 59 a . Any of the beam splitters B, D, Q, h, o, s, J, N, W, u, x and y is used as the beam splitter 59 b . Any of the beam splitters I, s, T and y is used as the beam splitter 59 c.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b and 9 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter s is used as the beam splitter 59 a . Any of the beam splitters B, F, N, h, p and u is used as the beam splitter 59 b . Any of the beam splitters G and u is used as the beam splitter 59 e.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b and 9 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter T is used as the beam splitter 59 a . Any of the beam splitters C, D, o, J, M and x is used as the beam splitter 59 b . Any of the beam splitters h and u is used as the beam splitter 59 c.

In the present embodiment, the wavelengths of the semiconductor lasers 9 a , 9 b , and 9 c may be 780 nm, 660 nm, and 400 nm, respectively. At this time, the beam splitter s is used as the beam splitter 59 a . Any of the beam splitters C, E, M, k, o, and x is used as the beam splitter 59 b . Any of the beam splitters G and u is used as the beam splitter 59 c.

Further, one of the semiconductor lasers 9 a , 9 b , and 9 c can be replaced with the photodetector 109 a , in the present embodiment.

The forty-sixth embodiment of the optical head apparatus according to the present invention has the same characteristics as the ninth embodiment.

18. Forty-Seventh Embodiment

Type 16

The forty-seventh embodiment of the optical head apparatus according to the present invention has two light sources and two photodetectors. However, one of the two light sources integrates two light sources.

The forty-seventh embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 10 . The semiconductor laser 10 b integrates two semiconductor lasers. The structure of the semiconductor laser will be described later with reference to FIG. 72 . The wavelength of the semiconductor laser 10 a is 400 nm, and the wavelengths of the semiconductor laser 10 b are 660 nm and 780 nm. The beam splitter A is used as a beat splitter 60 a . Any of the beam splitters J, M, N, T, u, W, x, and y is used as a beam splitter 60 b . Any of the beam splitters s, v, and y is used as a beam splitter 60 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the tenth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 10 b enters, as S-polarized, into the beam splitter 60 c . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 60 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 60 a and enters, as P-polarized, into the beam splitter 60 c . About 50% of the light passes through the beam splitter 60 c , and is received by the photodetector 110 b.

In the present embodiment, the wavelength of the semiconductor laser 10 a may be 660 nm, and the wavelengths of the semiconductor laser 10 b may be 400 nm and 780 nm. At this time, the beam splitter B is used as the beam splitter 60 a . Any of the beam splitters h, k, o, p, s, u, v, x and y is used as the beam splitter 60 b . Any of the beam splitters T, W, and y is used as the beam splitter 60 c.

In the present embodiment, the wavelength of the semiconductor laser 10 a may be 780 nm, and the wavelengths of the semiconductor laser 10 b may be 400 nm and 660 nm. At this time, the beam splitter C is used as the beam splitter 60 a . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 60 b . Any of the beam splitters u, x, and y is used as the beam splitter 60 c.

Further, the semiconductor laser 10 a can be replaced with the photodetector 110 a , in the present embodiment. Also, the semiconductor laser 10 b can be replaced with the photodetector 10 b , in the present embodiment.

The forty-seventh embodiment of the optical head apparatus according to the present invention has the same characteristics as the tenth embodiment.

19. Forty-Eighth and Forty-Ninth Embodiments

Type 17

Each of the forty-eighth and forty-ninth embodiments of the optical head apparatus according to the present invention has two light sources and one photodetector. However, one of the two light sources is constructed by integrating two light sources.

Forty-Eighth Embodiment

The forty-eighth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 11 . The semiconductor laser 11 b is a semiconductor laser which integrates two semiconductor lasers. The structure of the laser will be described later with reference to FIG. 72 . The wavelength of the semiconductor laser 11 a is 400 nm, and the semiconductor laser 11 b has wavelengths of 660 nm and 780 nm. The beam splitter G is used as a beam splitter 61 a . Any of the beam splitters s and y is used as a beam splitter 61 b.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the eleventh embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 11 b enters, as S-polarized, into the beam splitter 61 b . About 50% of the light is reflected therefrom. Almost all of the light then passes through the beam splitter 61 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 61 a and enters, as P-polarized, into the beam splitter 61 b . About 50% of the light passes through the beam splitter 61 b and is received by the photodetector 111 a.

In the present embodiment, the wavelength of the semiconductor laser 11 a may be 660 nm and the wavelengths of the semiconductor laser 11 b may be 400 nm and 780 nm. At this time, the beam splitter h is used as the beam splitter 61 a . Any of the beam splitters T and y is used as the beam splitter 61 b . In the present embodiment, the wavelength of the semiconductor laser 11 a may be 780 nm and the wavelengths of the semiconductor laser 11 b may be 400 nm and 660 nm. At this time, the beam splitter I is used as the beam splitter 61 a . The beam splitter u is used as the beam splitter 61 b.

Further, one of the semiconductor lasers 11 a and 11 b can be replaced with the photodetector 111 a , in the present embodiment.

In the present embodiment, the semiconductor laser 11 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 11 a may be 660 nm and 780 nm, and the wavelength of the semiconductor laser 11 b may be 400 nm. At this time, the beam splitter s is used as the beam splitter 61 a . Any of the beam splitters G and u is used as the beam splitter 61 b.

In the present embodiment, the semiconductor laser 11 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 11 a may be 400 nm and 780 nm, and the wavelength of the semiconductor laser 11 b may be 660 nm. At this time, the beam splitter T is used as the beam splitter 61 a . Any of the beam splitters h and u is used as the beam splitter 61 b.

In the present embodiment, the semiconductor laser 11 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 11 a may be 400 nm and 660 nm, and the wavelength of the semiconductor laser 11 b may be 780 nm. At this time, the beam splitter u is used as the beam splitter 61 a . Any of the beam splitters I, s, T and y is used as the beam splitter 61 b.

Further, the semiconductor laser 11 a may be a semiconductor laser integrating two semiconductor lasers, and one of the semiconductor lasers 11 a and 11 b may be replaced with the photodetector 111 a , in the present embodiment.

The forty-eighth embodiment of the optical head apparatus according to the present invention has the same characteristics as the eleventh embodiment.

Forty-Ninth Embodiment

The forty-ninth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 12 . The semiconductor laser 12 b is a semiconductor laser which integrates two semiconductor lasers. The structure of the laser will be described later with reference to FIG. 72 . The wavelength of the semiconductor laser 12 a is 400 nm, and the semiconductor laser 12 b has wavelengths of 660 nm and 780 nm. The beam splitter J is used as a beam splitter 62 a . Any of the beam splitters v and y is used as a beam splitter 62 b.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the twelfth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 12 b enters, as P-polarized, into the beam splitter 62 b . About 50% of the light passes through the beam splitter 62 b . Almost all of the light is reflected by the beam splitter 62 a . The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 62 a and enters, as S-polarized, into the beam splitter 62 b . About 50% of the light is reflected therefrom and is received by the photodetector 112 a.

In the present embodiment, the wavelength of the semiconductor laser 12 a may be 660 nm and the wavelengths of the semiconductor laser 12 b may be 400 nm and 780 nm. At this time, the beam splitter k is used as the beam splitter 62 a . Any of the beam splitters W and y is used as the beam splitter 62 b . In the present embodiment, the wavelength of the semiconductor laser 12 a may be 780 nm and the wavelengths of the semiconductor laser 12 b may be 400 nm and 660 nm. At this time, the beam splitter L is used as the beam splitter 62 a . The beam splitter x is used as the beam splitter 62 b.

Further, one of the semiconductor lasers 12 a and 12 b can be replaced with the photodetector 112 a , in the present embodiment.

In the present embodiment, the semiconductor laser 12 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 12 a may be 660 nm and 780 nm, and the wavelength of the semiconductor laser 12 b may be 400 nm. At this time, the beam splitter v is used as the beam splitter 62 a . Any of the beam splitters J and x is used as the beam splitter 62 b.

In the present embodiment, the semiconductor laser 12 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 12 a may be 400 nm and 780 nm, and the wavelength of the semiconductor laser 12 b may be 660 nm. At this time, the beam splitter w is used as the beam splitter 62 a . Any of the beam splitters k and x is used as the beam splitter 62 b.

In the present embodiment, the semiconductor laser 12 a may be a semiconductor laser integrating two semiconductor lasers. The wavelengths of the semiconductor laser 12 a may be 400 nm and 660 nm, and the wavelength of the semiconductor laser 12 b may be 780 nm. At this time, the beam splitter x is used as the beam splitter 62 a . Any of the beam splitters L, v, W and y is used as the beam splitter 62 b.

Further, the semiconductor laser 12 a may be a semiconductor laser integrating two semiconductor lasers, and one of the semiconductor lasers 12 a and 12 b may be replaced with the photodetector 112 a , in the present embodiment.

The forty-ninth embodiment of the optical head apparatus according to the present invention has the same characteristics as the twelfth embodiment.

20. Fiftieth Embodiment

Type 18

The fiftieth embodiment of the optical head apparatus according to the present invention has one light source and one photodetector. However, the one light source integrates three light sources.

The fiftieth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 13 . The semiconductor laser 13 a integrates three semiconductor lasers. The structure of the laser will be described later with reference to FIG. 73 . The wavelengths of the semiconductor laser 13 a are 400 nm, 660 nm, and 780 nm. The beam splitter y is used as a beam splitter 63 a.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the thirteenth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 13 a enters, as S-polarized, into the beam splitter 63 a . About 50% of the light is reflected therefrom. The light is further reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 and enters, as P-polarized, into the beam splitter 63 a . About 50% of the light passes through the beam splitter 63 a and is received by the photodetector 113 a.

The fiftieth embodiment of the optical head apparatus according to the present invention has the same characteristics as the thirteenth embodiment.

21. Fifty-First to Fifty-Sixth Embodiments

Type 19

The fifty-first to fifty-sixth embodiments of the optical head apparatus according to the present invention each have two light sources, two photodetectors, and one module. The one module integrates one light source and one photodetector.

Fifty-First Embodiment

The fifty-first embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 14 . The module 164 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 164 a is 400 nm. The wavelengths of the semiconductor lasers 14 a and 14 b are 660 nm and 780 nm, respectively. The beam splitter A is used as a beam splitter 64 a . Any of the beam splitters B, F, and N is used as a beam splitter 64 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as a beam splitter 64 c . Any of the beam splitters I, L, Q, R, s, T, v, w and y is used as a beam splitter 64 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the fourteenth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 14 a enters, as P-polarized, into the beam splitter 64 c . About 50% of the light passes through the beam splitter 64 c . Almost all of the light is reflected by the beam splitter 64 b . Almost all of the light further passes through the beam splitter 64 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 64 a and is reflected by the beam splitter 64 b . The light then enters, as S-polarized, into the beam splitter 64 c . About 50% of the light is reflected therefrom and is received by the photodetector 114 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 400 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 64 a . Any of the beam splitters C, E, and M is used as the beam splitter 64 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 64 c . Any of the beam splitters h, k, o, p, s, v, v, x, and y is used as the beam splitter 64 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 660 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 64 a . Any of the beam splitters A, F, and p is used as the beam splitter 64 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 64 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 64 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 660 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 64 a . Any of the beam splitters C, D, and o is used as the beam splitter 64 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 64 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 64 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 780 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 64 a . Any of the beam splitters A, E, and R is used as the beam splitter 64 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 64 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 64 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 164 a may be 780 nm, and the wavelengths of the semiconductor lasers 14 a and 14 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 64 a . Any of the beam splitters B, D, and Q is used as the beam splitter 64 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 64 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 64 d.

Further, the semiconductor laser 14 a can be replaced with a photodetector 114 a , in the present embodiment. Also, in the present embodiment, the semiconductor laser 14 b can be replaced with a photodetector 114 b.

The fifty-first embodiment of the optical head apparatus according to the present invention has the same characteristics as the fourteenth embodiment.

Fifty-Second Embodiment

The fifty-second embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 15 . The module 165 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 165 a is 400 nm. The wavelengths of the semiconductor lasers 15 a and 15 b are 660 nm and 780 nm, respectively. The beam splitter D is used as a beam splitter 65 a . Any of the beam splitters C, E, and M is used as a beam splitter 65 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as a beam splitter 65 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as a beam splitter 65 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the fifteenth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 15 a enters, as S-polarized, into the beam splitter 65 c . About 50% of the light is reflected therefrom. Almost all of the light then passes through the beam splitter 65 b and is then reflected by the beam splitter 65 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 65 a and passes through the beam splitter 65 b . The light then enters, as P-polarized, into the beam splitter 65 c . About 50% of the light passes through the beam splitter 65 c and is received by the photodetector 115 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 400 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 780 nm and 660 nm, respectively. At this time, is the beam splitter D is used as the beam splitter 65 a . Any of the beam splitters B, F, and N is used as the beam splitter 65 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 65 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 65 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 660 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter E is used as the beam splitter 65 a . Any of the beam splitters C, D, and o is used as the beam splitter 65 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 65 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 65 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 660 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter E is used as the beam splitter 65 a . Any of the beam splitters A, F, and p is used as the beam splitter 65 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 65 c . Any of the beam splitters G, J, M, N, T, u, W, x and y is used as the beam splitter 65 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 780 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 65 a . Any of the beam splitters B, D, and Q is used as the beam splitter 65 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 65 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 65 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 165 a may be 780 nm, and the wavelengths of the semiconductor lasers 15 a and 15 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter F is used as the beam splitter 65 a . Any of the beam splitters A, E, and R is used as the beam splitter 65 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 65 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 65 d.

Further, the semiconductor laser 15 a can be replaced with a photodetector 115 a in the present embodiment. Also, in the present embodiment, the semiconductor laser 15 b can be replaced with a photodetector 115 b.

The fifty-second embodiment of the optical head apparatus according to the present invention has the same characteristics as the fifteenth embodiment.

Fifty-Third Embodiment

The fifty-third embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 16 . The module 166 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 166 a is 780 nm. The wavelengths of the semiconductor lasers 16 a and 16 b are 660 nm and 400 nm, respectively. The beam splitter D is used as a beam splitter 66 a . Any of the beam splitters k, o, and x is used as a beam splitter 66 b . Any of the beam splitters B, F, N, h, p, and U is used as a beam splitter 66 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 66 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the sixteenth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 16 a enters, as P-polarized, into the beam splitter 66 b . About 50% of the light passes through the beam splitter 66 b . Almost all of the light is then reflected by the beam splitter 66 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 205 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 66 a and enters, as S-polarized, into the beam splitter 66 b . About 50% of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 66 c . Almost all of the light is reflected therefrom and is received by the photodetector 116 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 660 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter D is used as the beam splitter 66 a . Any of the beam splitters L, Q, and W is used as the beam splitter 66 b . Any of the beam splitters C, E, and M is used as the beam splitter 66 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 66 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 780 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 66 a . Any of the beam splitters J, M, and x is used as the beam splitter 66 b . Any of the beam splitters A, F, p, G, N, and u is used as the beam splitter 66 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 66 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 400 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 66 a . Any of the beam splitters L, R, and v is used as the beam splitter 66 b . Any of the beam splitters C, D, and o is used as the beam splitter 66 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 66 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 166 a may be 660 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 66 a . Any of the beam splitters J, N, and W is used as the beam splitter 66 b . Any of the beam splitters A, E, R, G, M, and T is used as the beam splitter 66 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 66 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 16 a may be 400 nm, and the wavelengths of the semiconductor lasers 16 a and 16 b may be 660 nm and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 66 a . Any of the beam splitters k, p, and v is used as the beam splitter 66 b . Any of the beam splitters B, D, Q, h, o, and s is used as the beam splitter 66 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 66 d.

Further, the semiconductor laser 16 b can be replaced with a photodetector 116 b in the present embodiment. Also, in the present embodiment, the module 166 a , semiconductor laser 16 a , and photodetector 116 a can be replaced with each other.

The fifty-third embodiment of the optical head apparatus according to the present invention has the same characteristics as the sixteenth embodiment.

Fifty-Fourth Embodiment

The fifty-fourth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 17 . The module 167 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 167 a is 780 nm. The wavelengths of the semiconductor lasers 17 a and 17 b are 660 nm and 400 nm, respectively. The beam splitter D is used as a beam splitter 67 a . Any of the beam splitters h, p, and u is used as a beam splitter 67 b . Any of the beam splitters C, E, M, k, o, and x is used as a beam splitter 67 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 67 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the seventeenth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 17 a enters, as S-polarized, into the beam splitter 67 b . About 50% of the light is reflected therefrom and is then reflected by the beam splitter 67 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 67 a and enters, as P-polarized, into the beam splitter 67 b . About 50% of the light passes through the beam splitter 67 b and enters, as P-polarized, into the beam splitter 67 c . Almost all of the light passes through the beam splitter 67 c and is received by the photodetector 117 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 660 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter D is used as the beam splitter 67 a . Any of the beam splitters I, R and T is used as the beam splitter 67 b . Any of the beam splitters B, F, and N is used as the beam splitter 67 c . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 67 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 780 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 67 a . Any of the beam splitters G, N, and u is used as the beam splitter 67 b . Any of the beam splitters C, D, o, J, M, and x is used as the beam splitter 67 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 67 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 400 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter E is used as the beam splitter 67 a . Any of the beam splitters I, Q and a is used as the beam splitter 67 b . Any of the beam splitters A, F, and p is used as the beam splitter 67 c . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 67 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 660 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 67 a . Any of the beam splitters G, M, and T is used as the beam splitter 67 b . Any of the beam splitters B, D, Q, J, N, and W is used as the beam splitter 67 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 67 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 167 a may be 400 nm, and the wavelengths of the semiconductor lasers 17 a and 17 b may be 660 nm and 780 nm, respectively. At this time, the beam splitter F is used as the beam splitter 67 a . Any of the beam splitters h, o, and s is used as the beam splitter 67 b . Any of the beam splitters A, E, R, k, p, and v is used as the beam splitter 67 c . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 67 d.

Further, the semiconductor laser 17 b can be replaced with a photodetector 117 b in the present embodiment. Also, in the present embodiment, the module 167 a , semiconductor laser 17 a , and photodetector 117 a can be replaced with each other.

The fifty-fourth embodiment of the optical head apparatus according to the present invention has the same characteristics as the seventeenth embodiment.

Fifty-Fifth Embodiment

The fifty-fifth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 18 . The module 168 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 168 a is 780 nm. The wavelengths of the semiconductor lasers 18 a and 18 b are 400 nm and 660 nm, respectively. The beat splitter A is used as a beam splitter 68 a . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 68 b . Any of the beam splitters h, p, and u is used as a beam splitter 68 c . Any of the beam splitters C, E, M, k, o, and x is used as a beam splitter 68 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the eighteenth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 18 b enters, as S-polarized, into the beam splitter 68 a . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 68 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 68 a and enters, as P-polarized, into the beam splitter 68 c . About 50% of the light passes through the beam splitter 68 c and enters, as P-polarized, into the beam splitter 68 d . Almost all of the light passes through the beam splitter 68 d and is received by the photodetector 118 b.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 660 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter A is used as the beam splitter 68 a . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 68 b . Any of the beam splitters I, R and T is used as the beam splitter 68 c . Any of the beam splitters B, F, and N is used as the beam splitter 68 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 16 a may be 780 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 68 a . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 68 b . Any of the beam splitters G, N, and u is used as the beam splitter 68 c . Any of the beam splitters C, D, o, J, M, and x is used as the beam splitter 68 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 400 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 660 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 68 a . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 68 b . Any of the beam splitters I, Q and s is used as the beam splitter 68 c . Any of the beam splitters A, F, and p is used as the beam splitter 68 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 660 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 68 a . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 68 b . Any of the beam splitters G, M, and T is used as the beam splitter 68 c . Any of the beam splitters B, D, Q, J, N, and W is used as the beam splitter 68 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 168 a may be 400 nm, and the wavelengths of the semiconductor lasers 18 a and 18 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 68 a . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 68 b . Any of the beam splitters h, o, and s is used as the beam splitter 68 c . Any of the beam splitters A, E, R, k, p, and v is used as the beam splitter 68 d.

Further, the semiconductor laser 18 a can be replaced with a photodetector 118 a in the present embodiment. Also, in the present embodiment, the module 168 a , semiconductor laser 18 b , and photodetector 118 b can be replaced with each other.

The fifty-fifth embodiment of the optical head apparatus according to the present invention has the same characteristics as the eighteenth embodiment.

Fifty-Sixth Embodiment

The fifty-sixth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 19 . The module 169 a is a module which integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 169 a is 780 nm. The wavelengths of the semiconductor lasers 19 a and 19 b are 400 nm and 660 nm, respectively. The beam splitter A is used as a beam splitter 69 a . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 69 b . Any of the beam splitters k, o, and x is used as a beam splitter 69 c . Any of the beam splitters B, F, N, h, p, and u is used as a beam splitter 69 d.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the nineteenth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 19 b enters, as P-polarized, into the beam splitter 69 c . About 50% of the light passes through the beam splitter 69 c . Almost all of the light further passes through the beam splitter 69 a . The light is reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 69 a and enters, as S-polarized, into the beam splitter 69 c . About 50% of the light is reflected therefrom and enters, as S-polarized, into the beam splitter 69 d . Almost all of the light is reflected therefrom and is received by the photodetector 119 b.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 660 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter A is used as the beam splitter 69 a . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 69 b . Any of the beam splitters L, Q, and W is used as the beam splitter 69 c . Any of the beam splitters C, E, and M is used as the beam splitter 69 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 780 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 69 a . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 69 b . Any of the beam splitters J, M, and x is used as the beam splitter 69 c . Any of the beam splitters A, F, p, G, N, and u is used as the beam splitter 69 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 400 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 660 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 69 a . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 69 b . Any of the beam splitters L, R, and v is used as the beam splitter 69 c . Any of the beam splitters C, D, and o is used as the beam splitter 69 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 660 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 69 a . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 69 b . Any of the beam splitters J, N, and W is used as the beam splitter 69 c . Any of the beam splitters A, E, R, G, M, and T is used as the beam splitter 69 d.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 169 a may be 400 nm, and the wavelengths of the semiconductor lasers 19 a and 19 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 69 a . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 69 b . Any of the beam splitters k, p, and v is used as the beam splitter 69 c . Any of the beam splitters B, D, Q, h, o, and s is used as the beam splitter 69 d.

Further, the semiconductor laser 19 a can be replaced with a photodetector 119 a in the present embodiment. Also, in the present embodiment, the module 169 a , semiconductor laser 19 b , and photodetector 119 b can be replaced with each other.

The fifty-sixth embodiment of the optical head apparatus according to the present invention has the same characteristics as the nineteenth embodiment.

22. Fifty-Seventh to Sixty-First Embodiments

Type 20

The fifty-seventh to sixty-first embodiments of the optical head apparatus according to the present invention each have one light source, one photodetector, and two modules. However, each of the two modules integrates one light source and one photodetector.

Fifty-Seventh Embodiment

The fifty-seventh embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 20 . The modules 170 a and 170 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 170 a and 170 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 20 a is 400 nm. The beam splitter C is used as a beam splitter 70 a . Any of the beam splitters B, D, and Q is used as a beam splitter 70 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 70 c.

Descriptions concerning light having a wavelength of 400 nm, light having a wavelength of 660 nm, and light having a wavelength of 780 nm will be the same as those made in the twentieth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 170 a and 170 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 400 nm. At this time, the beam splitter B is used as the beam splitter 70 a . Any of the beam splitters C, D, and o is used as the beam splitter 70 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 70 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 170 a and 170 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 660 nm. At this time, the beam splitter C is used as the beam splitter 70 a . Any of the beam splitters A, E, and R is used as the beam splitter 70 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 70 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 170 a and 170 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 660 nm. At this time, the beam splitter A is used as the beam splitter 70 a . Any of the beam splitters C, E, and M is used as the beam splitter 70 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 70 c.

In the present embodiment, the wavelengths of the semiconductor lasers 170 a and 170 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 780 nm. At this time, the beam splitter B is used as the beam splitter 70 a . Any of the beam splitters A, F, and p is used as the beam splitter 70 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 70 c.

In the present embodiment, the wavelengths of the semiconductor lasers 170 a and 170 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 20 a may be 780 nm. At this time, the beam splitter A is used as the beam splitter 70 a . Any of the beam splitters B, F, and N is used as the beam splitter 70 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 70 c.

Further, the modules 170 a and 170 b , semiconductor laser 20 a , and photodetector 120 a can be replaced with each other, in the present embodiment.

The fifty-seventh embodiment of the optical head apparatus according to the present invention has the same characteristics as the twentieth embodiment.

Fifty-Eighth Embodiment

The fifty-eighth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 21 . The modules 171 a and 171 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 171 a and 171 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 21 a is 400 nm. The beam splitter F is used as a beam splitter 71 a . Any of the beam splitters A, E, and R is used as a beam splitter 71 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 71 c.

Descriptions concerning light having a wavelength of 400 nm, light having a wavelength of 660 nm, and light having a wavelength of 780 nm will be the same as those made in the twenty-first embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 171 a and 171 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 400 nm. At this time, the beam splitter E is used as the beam splitter 71 a . Any of the beam splitters A, F, and p is used as the beam splitter 71 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 71 c.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 171 a and 171 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 660 nm. At this time, the beam splitter F is used as the beam splitter 71 a . Any of the beam splitters B, D, and Q is used as the beam splitter 71 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 71 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 171 a and 171 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 660 nm. At this time, the beam splitter D is used as the beam splitter 71 a . Any of the beam splitters B, F, and N is used as the beam splitter 71 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 71 c.

In the present embodiment, the wavelengths of the semiconductor lasers 171 a and 171 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 780 nm. At this time, the beam splitter E is used as the beam splitter 71 a . Any of the beam splitters C, D, and o is used as the beam splitter 71 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 71 c.

In the present embodiment, the wavelengths of the semiconductor lasers 171 a and 171 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 21 a may be 780 nm. At this time, the beam splitter D is used as the beam splitter 71 a . Any of the beam splitters C, E, and M is used as the beam splitter 71 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 71 c.

Further, the modules 171 a and 171 b , semiconductor laser 21 a , and photodetector 121 a can be replaced with each other, in the present embodiment.

The fifty-eighth embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-first embodiment.

Fifty-Ninth Embodiment

The fifty-ninth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 22 . The modules 172 a and 172 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 172 a and 172 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 22 a is 400 nm. The beam splitter C is used as a beam splitter 72 a . Any of the beam splitters A, E, and R is used as a beam splitter 72 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 72 c.

Descriptions concerning light having a wavelength of 400 nm, light having a wavelength of 660 nm, and light having a wavelength of 780 nm will be the same as those made in the twenty-second embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 172 a and 172 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 400 nm. At this time, the beam splitter B is used as the beam splitter 72 a . Any of the beam splitters A, F, and p is used as the beam splitter 72 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 72 c.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 172 a and 172 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 660 nm. At this time, the beam splitter C is used as the beam splitter 72 a . Any of the beam splitters B, D, and Q is used as the beam splitter 72 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 72 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 172 a and 172 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 660 nm. At this time, the beam splitter A is used as the beam splitter 72 a . Any of the beam splitters B, F, and N is used as the beam splitter 72 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 72 c.

In the present embodiment, the wavelengths of the semiconductor lasers 172 a and 172 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 780 nm. At this time, the beam splitter B is used as the beam splitter 72 a . Any of the beam splitters C, D, and o is used as the beam splitter 72 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 72 c.

In the present embodiment, the wavelengths of the semiconductor lasers 172 a and 172 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 22 a may be 760 nm. At this time, the beam splitter A is used as the beam splitter 72 a . Any of the beam splitters C, E, and M is used as the beam splitter 72 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 72 c.

Further, the modules 172 a and 172 b , semiconductor laser 22 a , and photodetector 122 a can be replaced with each other, in the present embodiment.

The fifty-ninth embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-second embodiment.

Sixtieth Embodiment

The sixtieth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 23 . The modules 173 a and 173 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 173 a and 173 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 23 a is 400 nm. The beam splitter F is used as a beam splitter 73 a . Any of the beam splitters B, D, and Q is used as a beam splitter 73 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 73 c.

Descriptions concerning light having a wavelength of 400 nm, light having a wavelength of 660 nm, and light having a wavelength of 780 nm will be the same as those made in the twenty-third embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 173 a and 173 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 400 nm. At this time, the beam splitter E is used as the beam splitter 73 a . Any of the beam splitters C, D, and o is used as the beam splitter 73 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 73 c.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 173 a and 173 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 660 nm. At this time, the beam splitter F is used as the beam splitter 73 a . Any of the beam splitters A, E, and R is used as the beam splitter 73 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 73 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 173 a and 173 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 660 nm. At this time, the beam splitter D is used as the beam splitter 73 a . Any of the beam splitters C, E, and M is used as the beam splitter 73 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 73 c.

In the present embodiment, the wavelengths of the semiconductor lasers 173 a and 173 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 780 nm. At this time, the beam splitter E is used as the beam splitter 73 a . Any of the beam splitters A, F, and p is used as the beam splitter 73 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 73 c.

In the present embodiment, the wavelengths of the semiconductor lasers 173 a and 173 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 23 a may be 780 nm. At this time, the beam splitter D is used as the beam splitter 73 a . Any of the beam splitters B, F, and N is used as the beam splitter 73 b . Any of the beam splitters I, L, Q, R, s, T, v, W, and y is used as the beam splitter 73 c.

Further, the modules 173 a and 173 b , semiconductor laser 23 a , and photodetector 123 a can be replaced with each other, in the present embodiment.

The sixtieth embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-third embodiment.

Sixty-First Embodiment

The sixty-first embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 24 . The modules 174 a and 174 b are modules each of which integrates one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 174 a and 174 b are 780 nm and 660 nm, respectively. The wavelength of the semiconductor laser 24 a is 400 nm. The beam splitter D is used as a beam splitter 74 a . Any of the beam splitters C, E, and M is used as a beam splitter 74 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as a beam splitter 74 c.

Descriptions concerning light having a wavelength of 400 nm, light having a wavelength of 660 nm, and light having a wavelength of 780 nm will be the same as those made in the twenty-fourth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 174 a and 174 b may be 660 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 400 nm. At this time, the beam splitter D is used as the beam splitter 74 a . Any of the beam splitters B, F, and N is used as the beam splitter 74 b . Any of the beam splitters G, J, M, N, T, u, W, x, and y is used as the beam splitter 74 c.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 174 a and 174 b may be 780 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 660 nm. At this time, the beam splitter E is used as the beam splitter 74 a . Any of the beam splitters C, D, and o is used as the beam splitter 74 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 74 c.

In the present embodiment, the wavelengths of the semiconductor lasers in the modules 174 a and 174 b may be 400 nm and 780 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 660 nm. At this time, the beam splitter E is used as the beam splitter 74 a . Any of the beam splitters A, F, and p is used as the beam splitter 74 b . Any of the beam splitters h, k, o, p, s, u, v, x, and y is used as the beam splitter 74 c.

In the present embodiment, the wavelengths of the semiconductor lasers 174 a and 174 b may be 660 nm and 400 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 780 nm. At this time, the beam splitter F is used as the beam splitter 74 a . Any of the beam splitters B, D, and Q is used as the beam splitter 74 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 74 c.

In the present embodiment, the wavelengths of the semiconductor lasers 174 a and 174 b may be 400 nm and 660 nm, respectively, and the wavelength of the semiconductor laser 24 a may be 780 nm. At this time, the beam splitter F is used as the beam splitter 74 a . Any of the beam splitters A, E, and R is used as the beam splitter 74 b . Any of the beam splitters I, L, Q, R, s, T, v, W and y is used as the beam splitter 74 c.

Further, the semiconductor laser 24 a and the photodetector 124 a can be replaced with each other, in the present embodiment. Also, one of the modules 174 a and 174 b can be replaced with the semiconductor laser 24 a , and the other one of the modules 174 a and 174 b can be replaced with the photodetector 124 a , in the present embodiment.

The sixty-first embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-fourth embodiment.

23. Sixty-Second to Sixty-Sixth Embodiments

Type 21

The sixty-second to sixty-sixth embodiments of the optical head apparatus according to the present invention each have two light sources, one photodetector, and one module. However, the one module integrates one light source and one photodetector.

Sixty-Second Embodiment

The sixty-second embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 25 . The module 175 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 175 a is 400 nm. The wavelengths of the semiconductor lasers 25 a and 25 b are 660 nm and 780 nm, respectively. The beam splitter A is used as a beam splitter 75 a . Any of the beam splitters h, p, and u is used as a beam splitter 75 b . Any of the beam splitters I, R, T, s, v and y is used as a beam splitter 75 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the twenty-fifth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 25 a enters, as S-polarized, into the beam splitter 75 b . About 50% of the light is reflected therefrom. Almost all of the light then passes through the beam splitter 75 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 75 a and enters, as P-polarized, into the beam splitter 75 b . About 50% of the light passes through the beam splitter 75 b , and enters, as P-polarized, into the beam splitter 75 c . Almost all of the light passes through the beam splitter 75 c and is received by the photodetector 125 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 400 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 75 a . Any of the beam splitters I, R and T is used as the beam splitter 75 b . Any of the beam splitters h, p, and u is used as the beam splitter 75 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 660 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 75 a . Any of the beam splitters G, N, and u is used as the beam splitter 75 b . Any of the beam splitters I, Q, s, T, W and y is used as the beam splitter 75 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 660 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 75 a . Any of the beam splitters I, Q and s is used as the beam splitter 75 b . Any of the beam splitters G, N, and u is used as the beam splitter 75 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 780 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 75 a . Any of the beam splitters G, M, and T is used as the beam splitter 75 b . Any of the beam splitters h, o, s, u, x, and y is used as the beam splitter 75 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 780 nm, and the wavelengths of the semiconductor lasers 25 a and 25 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 75 a . Any of the beam splitters h, o, and s is used as the beam splitter 75 b . Any of the beam splitters G, M, T, u, x, and y is used as the beam splitter 75 c.

Further, the module 175 a , semiconductor lasers 25 a and 25 b , and photodetector 125 a can be replaced with each other, in the present embodiment.

The sixty-second embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-fifth embodiment.

Sixty-Third Embodiment

The sixty-third embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 26 . The module 176 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 176 a is 400 nm. The wavelengths of the semiconductor lasers 26 a and 26 b are 660 nm and 780 nm, respectively. The beam splitter D is used as a beam splitter 76 a . Any of the beam splitters k, o, and x is used as a beam splitter 76 b . Any of the beam splitters L, Q, W, s, v, and y is used as a beam splitter 76 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the twenty-sixth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 26 a enters, as P-polarized, into the beam splitter 76 b . About 50% of the light passes through the beam splitter 76 b . Almost all of the light is reflected by the beam splitter 76 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 76 a and enters, as S-polarized, into the beam splitter 76 b . About 50% of the light is reflected therefrom, and enters, as S-polarized, into the beam splitter 76 c . Almost all of the light is reflected therefrom and is received by the photodetector 126 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 400 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter D is used as the beam splitter 76 a . Any of the beam splitters L, Q, and W is used as the beam splitter 76 b . Any of the beam splitters k, o, and x is used as the beam splitter 76 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 660 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter E is used as the beam splitter 76 a . Any of the beam splitters J, M, and x is used as the beam splitter 76 b . Any of the beam splitters L, R, v, T, W, and y is used as the beam splitter 76 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 660 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter E is used as the beam splitter 76 a . Any of the beam splitters L, R, and v is used as the beam splitter 76 b . Any of the beam splitters J, M, and x is used as the beam splitter 76 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 780 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter F is used as the beam splitter 76 a . Any of the beam splitters J, N, and W is used as the beam splitter 76 b . Any of the beam splitters k, p, v, u, x, and y is used as the beam splitter 76 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 780 nm, and the wavelengths of the semiconductor lasers 26 a and 26 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter F is used as the beam splitter 76 a . Any of the beam splitters k, p, and v is used as the beam splitter 76 b . Any of the beam splitters J, N, W, u, x, and y is used as the beam splitter 76 c.

Further, the modules 176 a , semiconductor lasers 26 a and 26 b , and photodetector 126 a can be replaced with each other, in the present embodiment.

The sixty-third embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-sixth embodiment.

Sixty-Fourth Embodiment

The sixty-fourth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 27 . The module 177 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 177 a is 400 nm The wavelengths of the semiconductor lasers 27 a and 27 b are 660 nm and 780 nm, respectively. The beam splitter A is used as a beam splitter 77 a . Any of the beam splitters s, v, and y is used as a beam splitter 77 b . Any of the beam splitters C, E, M, k, o, and x is used as a beam splitter 77 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the twenty-seventh embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Light having a wavelength of 660 nm and emitted from the semiconductor laser 27 a passes through the beam splitter 77 c and enters, as S-polarized, into the beam splitter 77 b . About 50% of the light is reflected therefrom. Almost all of the light passes through the beam splitter 77 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light passes through the beam splitter 77 a and enters, as P-polarized, into the beam splitter 77 b . About 50% of the light passes through the beam splitter 77 b and is received by the photodetector 127 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 400 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter A is used as the beam splatter 77 a . Any of the beam splitters s, v, and y is used as the beam splitter 77 b . Any of the beam splitters B, F, N, h, p, and u is used as the beam splitter 77 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 660 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 77 a . Any of the beam splitters T, W, and y is used as the beam splitter 77 b . Any of the beam splitters C, D, o, J, M, and x is used as the beam splitter 77 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 660 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 77 a . Any of the beam splitters T, W, and y is used as the beam splitter 77 b . Any of the beam splitters A, F, p, G, N, and u is used as the beam splitter 77 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 780 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 77 a . Any of the beam splitters u, x, and y is used as the beam splitter 77 b . Any of the beam splitters B, D, Q, h, o, s, J, N, W, u, x, and y is used as the beam splitter 77 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 177 a may be 780 nm, and the wavelengths of the semiconductor lasers 27 a and 27 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter C is used as the beam splitter 77 a . Any of the beam splitters u, x, and y is used as the beam splitter 77 b . Any of the beam splitters A, E, R, G, M, T, k, p, v, u, x, and y is used as the beam splitter 77 c.

Further, the modules 177 a , semiconductor lasers 27 a and 27 b , and photodetector 127 a ran be replaced with each other, in the present embodiment.

The sixty-fourth embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-seventh embodiment.

Sixty-Fifth Embodiment

The sixty-fifth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 28 . The module 178 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 178 a is 400 nm. The wavelengths of the semiconductor lasers 28 a and 28 b are 660 nm and 780 nm, respectively. The beam splitter D is used as a beam splitter 78 a . Any of the beam splitters S, v, and y is used as a beam splitter 78 b . Any of the beam splitters B, F, N, h, p, and u is used as a beam splitter 78 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the twenty-eighth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 28 a is reflected by the beam splitter 78 a and enters, as P-polarized, into the beam splitter 78 b . About 50% of the light passes through the beam splitter 78 b . Almost all of the light is reflected by the beam splitter 78 a . The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . Almost all of the light is reflected by the beam splitter 78 a and enters, as S-polarized, into the beam splitter 78 b . About 50% of the light is reflected therefrom and is received by the photodetector 128 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 176 a may be 400 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter D is used as the beam splitter 78 a . Any of the beam splitters s, v, and y is used as the beam splitter 78 b . Any of the beam splitters C, E, M, k, o, and x is used as the beam splitter 78 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 660 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter E is used as the beam splitter 78 a . Any of the beam splitters T, W, and y is used as the beam splitter 78 b . Any of the beam splitters A, F, p, G, N, and u is used as the beam splitter 78 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 660 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter E is used as the beam splitter 78 a . Any of the beam splitters T, W, and y is used as the beam splitter 78 b . Any of the beam splitters C, D, o, J, X, and x is used as the beam splitter 78 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 780 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 400 nm and 660 nm, respectively. At this time, the beam splitter F is used as the beam splitter 78 a . Any of the beam splitters u, x, and y is used as the beam splitter 78 b . Any of the beam splitters A, E, R, k, p, v, G, M, T, u, x, and y is used as the beam splitter 78 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 178 a may be 780 nm, and the wavelengths of the semiconductor lasers 28 a and 28 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter F is used as the beam splitter 78 a . Any of the beam splitters u, x, and y is used as the beam splitter 78 b . Any of the beam splitters B, D, Q, J, N, W, h, o, s, u, x, and y is used as the beam splitter 78 c.

Further, the module 178 a , semiconductor lasers 28 a and 28 b , and photodetector 128 a can be replaced with each other, in the present embodiment.

The sixty-fifth embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-eighth embodiment.

Sixty-Sixth Embodiment

The sixty-sixth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 29 . The modules 179 a integrates one semiconductor laser and one photodetector. The structure of the module will be described later with reference to FIG. 74 . The wavelength of the semiconductor laser integrated in the module 179 a is 400 nm. The wavelengths of the semiconductor lasers 29 a and 29 b are 660 nm and 780 nm, respectively. The beam splitter p is used as a beam splitter 79 a . Any of the beam splitters A, E, R, k, p, and v, is used as a beam splitter 79 b . Any of the beam splitters I, R, T, s, v and y is used as a beam splitter 79 c.

Descriptions concerning light having a wavelength of 400 nm and light having a wavelength of 780 nm will be the same as those made in the twenty-ninth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

Almost all of light having a wavelength of 660 nm and emitted from the semiconductor laser 29 a passes through the beam splitter 79 b and enters, as S-polarized, into the beam splitter 79 a . About 50% all of the light is reflected therefrom. The light is then reflected by the mirror 201 and is transformed from linearly polarized light into circularly polarized light by the wavelength plate 202 . The light is then converged on a disk 204 according to the DVD standard by the objective lens 203 . Reflection light from the disk 204 passes through the objective lens 203 in a reverse direction and is transformed, by the wavelength plate 202 , from circularly polarized light into linearly polarized light whose polarization direction is perpendicular to that in the forward path. The light is then reflected by the mirror 201 . The light enters, as P-polarized, into the beam splitter 79 a . About 50% of the light passes through the beam splitter 79 a and enters, as P-polarized, into the beam splitter 79 c . Almost all of the light passes through the beam splitter 79 c and is received by the photodetector 129 a.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 179 a may be 400 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 780 nm and 660 nm, respectively. At this time, the beam splitter R is used as the beam splitter 79 a . Any of the beam splitters A, F, and p is used as the beam splitter 79 b . Any of the beam splitters h, p, and u is used as the beam splitter 79 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 179 a may be 660 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 400 nm and 780 nm, respectively. At this time, the beam splitter N is used as the beam splitter 79 a . Any of the beam splitters B, D, Q, J, N, and W is used as the beam splitter 79 b . Any of the beam splitters I, Q, s, T, W and y is used as the beam splitter 79 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 175 a may be 660 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 780 nm and 400 nm, respectively. At this time, the beam splitter Q is used as the beam splitter 79 a . Any of the beam splitters B, F, and N is used as the beam splitter 79 b . Any of the beam splitters G, N, and u is used as the beam splitter 79 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 179 a may be 780 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 400 mm and 660 nm, respectively. At this time, the beam splitter M is used as the beam splitter 79 a . Any of the beam splitters C, D, o, J, M, and x is used as the beam splitter 79 b . Any of the beam splitters h, o, s, u, x, and y is used as the beam splitter 79 c.

In the present embodiment, the wavelength of the semiconductor laser integrated in the module 179 a may be 780 nm, and the wavelengths of the semiconductor lasers 29 a and 29 b may be 660 nm and 400 nm, respectively. At this time, the beam splitter o is used as the beam splitter 79 a . Any of the beam splitters C, E, M, k, o, and x is used as the beam splitter 79 b . Any of the beam splitters G, M, T, u, x, and y is used as the beam splitter 79 c.

Further, the module 179 a , semiconductor lasers 29 a and 29 b , and photodetector 129 a can be replaced with each other, in the present embodiment.

The sixty-sixth embodiment of the optical head apparatus according to the present invention has the same characteristics as the twenty-ninth embodiment.

24. Sixty-Seventh and Sixty-Eighth Embodiments

Type 22

The sixty-seventh and sixty-eighth embodiments of the optical head apparatus according to the present invention each have three modules. However, each of the three modules integrates one light source and one photodetector.

Sixty-Seventh Embodiment

The sixty-seventh embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 30 . The modules 180 a , 180 b , and 180 c each integrate one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c are 780 nm, 660 nm, and 400 nm, respectively. The beam splitter C is used as a beam splitter 80 a . Any of the beam splitters B, D, and Q is used as a beam splitter 80 b.

Descriptions concerning light having a wavelength of 400 nm, light having a wavelength of 660 nm, and light having a wavelength of 780 nm will be the same as those made in the thirtieth embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter B is used as the beam splitter 80 a . Any of the beam splitters C, D, and o is used as the beam splitter 80 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 780 nm, 400 nm, and 660 nm, respectively. At this time, the beam splitter C is used as the beam splitter 80 a . Any of the beam splitters A, E, and R is used as the beam splitter 80 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 400 nm, 780 nm, and 660 nm, respectively. At this time, the beam splitter A is used as the beam splitter 80 a . Any of the beam splitters C, E, and M is used as the beam splitter 80 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 660 nm, 400 nm, and 780 nm, respectively. At this time, the beam splitter B is used as the beam splitter 80 a . Any of the beam splitters A, F, and p is used as the beam splitter 80 b.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 180 a , 180 b , and 180 c may be 400 nm, 660 nm, and 780 nm, respectively. At this time, the beam splitter A is used as the beam splitter 80 a . Any of the beam splitters B, F, and N is used as the beam splitter 80 b.

The sixty-seventh embodiment of the optical head apparatus according to the present invention has the same characteristics as the thirtieth embodiment.

Sixty-Eighth Embodiment

The sixty-eighth embodiment of the optical head apparatus according to the present invention is basically the same as the embodiment shown in FIG. 31 . The modules 181 a , 181 b , and 181 c each integrate one semiconductor laser and one photodetector. The structure of each module will be described later with reference to FIG. 74 . The wavelengths of the semiconductor lasers integrated in the modules 181 a , 181 b , and 181 c are 780 nm, 660 nm, and 400 nm, respectively. The beam splitter F is used as a beam splitter 81 a . Any of the beam splitters A, E, and R is used as a beam splitter 81 b.

Descriptions concerning light having a wavelength of 400 nm, light having a wavelength of 660 nm, and light having a wavelength of 780 nm will be the same as those made in the thirty-first embodiment of the optical head apparatus according to the present invention, and will therefore be omitted herefrom.

In the present embodiment, the wavelengths of the semiconductor lasers integrated in the modules 181 a , 181 b , and 181 c may be 660 nm, 780 nm, and 400 nm, respectively. At this time, the beam splitter E is used as the beam splitte