USPatent applicationPatented

Nitrided valve metals and processes for making the same

Granted 5 Dec 2006 · 4 office actions

Current assignee: Global Advanced Metals, USA, Inc. · originally Cabot Corporation

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Attorney: Attorney · Log in to unlock

Inventors: Shi Yuan, legal representative · Examiner: Daniel Jenkins · AU 1742 · TC 1700

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Abstract

Nitrided valve metals are described, such as nitrided tantalum and nitrided niobium. The nitrided valve metals preferably have improved flow properties, higher Scott Densities, and/or improved pore size distribution which leads to improved physical properties of the valve metal and improved electrical properties once the valve metal is formed into a capacitor anode. Processes for preparing a nitrided valve metal are further described and involve nitriding the valve metal at a sufficient temperature and pressure during a heat treatment that is prior to the deoxidation step. Capacitor anodes and other products incorporating the valve metals of the present invention are further described.

Description

13 parts
›CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No. 09/795,947 filed Feb. 28, 2001 now U.S. Pat. No. 6,679,934, which in turn claims the benefit under 35 U.S.C. § 119(e) of prior U.S. Provisional Patent Application No. 60/185,979 filed Mar. 1, 2000, which is incorporated in its entirety by reference herein.

›BACKGROUND OF THE INVENTION

The present invention relates to valve metals and processes of preparing valve metals of acceptable quality for use in such applications as capacitors and the like.

There is always a desire in the industry to improve on the properties of valve metals, such as tantalum, particularly in the areas of capacitance and DC leakage achieved by valve metals when formed into capacitor anodes. The manner in which the various valve metal properties are improved upon include modifying various steps of the processes involved in making the valve metal, including purifying the valve metal.

There are general processes known to those skilled in the art for preparing valve metals. For instance, tantalum is obtained from ore and subsequently crushed into a powder. The tantalum is then separated from the crushed ore through the use of an acid solution and density separation of the acid solution containing the tantalum from the acid solution containing niobium and other impurities. The acid solution containing the tantalum is then crystallized into a salt and this tantalum containing salt is then reacted with pure sodium in order to reduce the tantalum containing salts to tantalum and to form salts with the non-tantalum containing elements. Water washing is then used to remove the salts and recover the tantalum which is subsequently subjected to one or more acid Teachings to remove chemical impurities. The tantalum is then dried resulting in what is known as a basic lot powder. Typically, this basic lot(s) is subjected to a heat treatment or thermal agglomeration step and then passivated to obtain a powder cake that is subsequently ground up into a powder. A deoxidation step using oxygen getters, such as magnesium, is then performed. After the deoxidation step, the tantalum powder is generally subjected to an acid wash and dried. The powder is then pressed into a pellet and sintered for subsequent processing by capacitor anode manufacturers.

There is an interest by those skilled in the art to nitride valve metals, such as tantalum, with the belief that such nitriding can decrease the DC leakage in capacitor anodes formed from such nitrided tantalum. The current nitriding techniques primarily involve the use of nitrogen containing compounds or nitrogen gas during the deoxidation stage. This method has several disadvantages including the lack of uniform distribution of the nitrogen in the valve metal.

Accordingly, there is a desire to improve on the methods of nitriding valve metals as well as improving on the resulting product.

›SUMMARY OF THE PRESENT INVENTION

A feature of the present invention is to provide processes to nitride valve metals, such as tantalum.

Another feature of the present invention is to provide a process which provides a more uniform distribution of the nitrogen throughout the valve metal.

A further feature of the present invention is to provide nitrided valve metals, such as tantalum.

An additional feature of the present invention is to provide a nitrided valve metal, such as tantalum, having high capacitance capability along with excellent flow properties and/or Scott density.

Additional features and advantages of the present invention will be set forth in part in the description which follows, and in part will be apparent from the description, or may be learned by practice of the present invention. The objectives and other advantages of the present invention will be realized and obtained by means of the elements and combinations particularly pointed out in the written description and appended claims.

To achieve these and other advantages, and in accordance with the purpose of the present invention, as embodied and broadly described herein, the present invention relates to a process of preparing a nitrided valve metal which involves the step of nitriding a valve metal powder at a sufficient temperature and pressure prior to a deoxidation step. Preferably, the nitriding of the valve metal occurs during a heat treatment step but always prior to the deoxidation step.

The present invention further relates to nitrided valve metals wherein the nitrogen content is from about 1,500 ppm to about 4,000 ppm and is substantially and uniformly distributed throughout the valve metal. All ppm referenced herein are by weight.

The present invention also relates to a nitrided valve metal, such as tantalum, wherein at least a portion of the valve metal has pore sizes equal to or greater than 2 microns in size.

The present invention in addition relates to a nitrided tantalum having a capacitance of from about 40,000 CV/g to about 80,000 CV/g when formed into a capacitor anode and having a Scott Density of from about 25 to about 40 g/in 3 and/or a flow of from about 70 to about 300 mg/s.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide a further explanation of the present invention, as claimed.

The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate several embodiments of the present invention and together with the description serve to explain the principles of the present invention.

›BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 are graphs depicting the temperature and pressure conditions during a heat treatment, wherein tantalum powder was nitrided.

FIGS. 3 and 4 are graphs depicting pore size diameter of nitrided tantalum vs. Log Differential Intrusion (mL/g) and pore size diameter vs. Cumulative Pore Volume (mL/g).

›DETAILED DESCRIPTION OF THE PRESENT INVENTION · 1 of 2

The present invention relates to nitrided valve metals and processes for making nitrided valve metals.

For purposes of the present invention, valve metals include, but are not limited to, tantalum and niobium. Preferably, the valve metal is tantalum or niobium, and more preferably is tantalum.

The valve metal that is nitrided can be in any form and is preferably in the form of a powder. The powder can be any shape, such as flaked, nodular, or combinations thereof, and the like. Further, the powder can have any surface area and particle size and/or agglomerate size. For instance, the powder can have a BET surface area of from about 0.5 to about 10 m 2 /g and more preferably from about 1 to about 3 m 2 /g.

Furthermore, when the powder, such as tantalum, is formed into a capacitor anode, the capacitor preferably has a capacitance of from about 20,000 to about 80,000 CV/g, and more preferably from about 26,000 to about 64,000 CV/g when formed at 30 volts and a press density of 5.5 g/cc.

Preferably, the valve metal powder, especially tantalum, has a flow of from about 70 to about 300, and more preferably from about 80 to about 200 mg/s, as determined by the flow test recited in WO 99/61184, incorporated in its entirety by reference herein. Also, or alternatively, preferably the valve metal powder, especially tantalum, has a Scott Density of from about 25 to about 40, and more preferably, from about 26 to about 32 g/in 3 .

The amount of nitrogen present in the valve metal powder can be any amount suitable for such applications as capacitor anodes. Preferably, the nitrogen content is from about 1,500 ppm to about 4,000 ppm. The inventor has found that amounts generally greater than about 4,000 ppm do not lead to any additional improvement in properties compared to lower amounts of nitrogen. Similarly, amounts lower than about 1,500 ppm nitrogen generally do not accomplish the desired improvements sought with nitrogen doping. Accordingly, the range of from about 1,500 ppm to about 4,000 ppm is beneficial, and more preferably the range of from about 2,000 ppm to about 3,000 ppm nitrogen.

The valve metal can also have a phosphorus content, such as from about 50 ppm to about 100 ppm. The valve metal can also have an oxygen content, such as from about 1,500 ppm to about 3,500 ppm.

In addition, the valve metal powder, preferably tantalum, has at least a portion of the pores with a pore size of 2 microns or greater leads to beneficial properties once a capacitor anode is made and impregnated, since such pore sizes permit the more uniform and complete impregnation with the counter electrode liquid.

As stated earlier, the process of nitriding the valve metal preferably begins with the basic lot powder of the valve metal. The following discussion uses tantalum as an example but it must be realized that the following discussion is applicable to any valve metal and the process conditions, such as temperature and time of heat treatment, varies depending upon the type of valve metal involved.

In the present process, the basic lot powder can be obtained by any processing techniques known to those skilled in the art. Such general processing techniques have been discussed above in the background of the invention and typically involve recovering the ore, crushing the ore, conducting solvent extraction to recover the tantalum in a salt form, and reducing the tantalum salt with sodium in order to form tantalum and other salts. These other salts are generally removed by water washing, and acid leaching can then be conducted to remove chemical impurities. The tantalum is then dried to obtain the basic lot. These above steps can be modified in any manner or alternative steps can be used in order to achieve what is known to those skilled in the art as a basic lot powder.

Once the basic lot is obtained, it is preferred (though, optional) for purposes of the present invention to conduct further processing of the tantalum powder or other valve metal prior to heat treatment. One preferred processing step before heat treatment is conducting water agglomeration as described in PCT Publication No. WO 99/61184 published Dec. 2, 1999, incorporated in its entirety herein by reference. The tantalum powder in the form of a powder or powder cake, with or without the prior water agglomeration or other agglomeration procedures, can then be subjected to a heat treatment wherein the nitriding of the tantalum powder occurs.

For purposes of the present invention it is understood that heat treatment and thermal agglomeration refer to the same processing step which involves subjecting the tantalum powder or other valve metal powder to elevated temperatures generally in a furnace and generally under vacuum.

Preferably, in the heat treatment step and with reference to tantalum powder, if significant levels of hydrogen are present in the tantalum powder, such as on the order of greater than about 200 or 300 ppm hydrogen, then a degassing step is preferably conducted in order to substantially remove the hydrogen present. Typically, the degassing step will remove enough hydrogen from the tantalum powder so that after the degassing step, the amount of hydrogen present in the tantalum powder is below 50 ppm hydrogen and preferably below 40 ppm hydrogen gas.

Once the tantalum powder has been degassed (if needed), the heat treatment or thermal agglomeration of the tantalum powder can occur. With respect to tantalum, typically the sintering phase of the heat treatment occurs at a temperature of from about 1100° C. to about 1500° C., which is the approximate average temperature reached on the surface of the powder in the furnace. Generally, the heat treatment at this temperature range occurs for about 10 minutes to about 2 hours, although other times can be used depending upon the desired properties. For purposes of the present invention, the heat treatment includes the time necessary to reach the sintering phase which generally causes some loss of surface area of the powder. Furthermore, the heat treatment typically occurs under vacuum and preferably at about 0.01 Torr or less. The nitriding of the tantalum powder occurs during heat treatment and prior to the deoxidation step.

›DETAILED DESCRIPTION OF THE PRESENT INVENTION · 2 of 2

The nitriding of the tantalum powder or other valve metal preferably occurs at a temperature of about 600° C. or lower, and more preferably from about 250° C. to about 600° C., and more preferably from about 300° C. to about 400° C. Since the nitriding is preferably occurring at temperatures not above 600° C., it is preferred to conduct the nitriding where these temperatures are achievable, meaning, nitriding right before the sintering phase of heat treatment occurring at 1250° C.–1500° C. or after this high temperature phase has occurred. In the present invention, the nitriding of the metal powder preferably occurs once the temperature of the metal powder has reached some stability and is not fluctuating significantly (e.g., not fluctuating by more than 50° C. or so). Further, preferably the nitriding begins at a temperature of about 200°–300° C. to avoid the absorption of nitrogen in one location of the powder. Preferably, nitriding is started at a low temperature, like 200° C.–300° C., and then the temperature is ramped up at approximately 1° C. to about 10° C. per minute. Thus, a steady increase in temperature ensures that nitrogen absorption is uniform throughout the powder and further ensures that the temperature is substantially uniform for absorption, which can vary depending on powder and surface area, is reached for a sufficient time to permit absorption.

The nitriding of the tantalum powder can be accomplished with the use of a nitriding agent, such as nitrogen gas or a nitrogen containing gas or with nitrogen containing or generating compounds (e.g, TaN). Preferably, a nitrogen gas is used in this process. Generally, once the tantalum powder is at the preferred temperature range of from about 250° C. to about 600° C., the nitriding process is preferably started. In the preferred embodiment, the nitrogen gas is introduced into the furnace under vacuum and the amount of nitrogen gas introduced is dependent upon the amount of nitrogen desired in the resulting nitrided powder and the amount of basic lot powder present in the furnace. In the Examples, it can be seen that various amounts of nitrogen were introduced in order to achieve various nitrogen contents in the powder. In view of the present invention, one skilled in the art can readily determine the amount of nitrogen to be introduced into the furnace for a desired amount of nitrogen in the final metal powder.

It is preferred that the nitrogen gas or other nitrogen generating techniques do not occur at temperatures above 600° C. because the combination of nitrogen with tantalum is an exothermic reaction which generates heat and leads to an autocatalytic process which can be uncontrollable. This reaction leads to a non-uniformed distribution of the nitrogen in the basic lot powder.

Generally, during the nitriding process, the nitrogen is introduced into the furnace and is readily absorbed by the basic lot powder present in the furnace. Once the nitrogen gas has been absorbed, or prior to this step, the basic lot powder is subjected to the higher heat treatment phase or sintering phase of heat treatment described earlier. Once the desired heat treatment at high temperatures and the desired nitriding of the basic lot powder has occurred, the temperature is preferably substantially reduced in order to passivate the powder. Generally, the powder is in the form of a powder cake which is subsequently subjected to grinding. The powder can then be subjected to a deoxidation process. Any conventional deoxidation process can be used, such as with magnesium or any other oxygen getters. Once the deoxidation step and subsequent acid leaching is complete, the powder can be further processed in conventional manners, such as by pressing into pellets and sintering at desired temperatures which is dependent upon the desired capacitance and the type of valve metal being sintered. The sintered pellets can then be used as capacitor anodes using standard techniques known in the industry such as those set forth in U.S. Pat. Nos. 4,805,074; 5,412,533; 5,211,741; and 5,245,514, and European Patent Application Nos. 0 634 762 A1, incorporated in their entirety herein by reference.

The nitriding of the valve metal during the heat treatment step is beneficial compared to other nitriding methods which typically occur during the deoxidation step. By nitriding during the heat treatment stage, a more uniform distribution of the nitrogen throughout the entire valve metal powder is achieved. One reason this occurs may be due to the fact that the nitriding occurs at an early stage of the metal processing and thereafter there are many other stages which involve subjecting the valve metal to high temperatures. These additional stages assist in uniformly distributing the nitrogen. Thus, the earlier the nitriding can occur, the more uniform distribution of the nitrogen throughout the valve metal can be achieved. In the examples, as can be seen, uniform nitrogen distribution was accomplished.

It is certainly possible and within the bounds of the present invention to conduct more than one nitriding step in order to achieve any amount of nitrogen content desired in the final product.

The present invention will be further clarified by the following examples, which are intended to be exemplary of the present invention.

EXAMPLES
›Examples6
›Example 1

44 pounds of tantalum basic lot powder having the characteristics set forth in Table 1 were used. The basic lot tantalum powder was introduced into a furnace and placed under vacuum. A hydrogen degassing procedure was conducted by raising the temperature of the basic lot powder to about 745° C. for one hour, and during this time the increase in pressure resulting from the hydrogen release was vented out using a vacuum. Thereafter, under vacuum, the basic lot powder temperature was further increased to about 1146° C. for about 60 minutes and then the temperature of the basic lot powder was raised to about 1458° C. for 30 minutes and then the temperature was reduced to about 350° C. Argon gas was introduced once the furnace cooled to about 1,000° C. to aid in the cooling process. Once this lower temperature was reached, the argon gas was removed and nitrogen gas was introduced into the vacuum by pumping out and replacing the argon with nitrogen gas at a pressure of about 80 Torr. During this nitrogen addition, the temperature of the basic lot powder was increased to about 500° C. at a rate increase of 1° C. per minute and the pressure of the nitrogen gas decreased to about 1 Torr or less because the tantalum was absorbing the nitrogen. Once the nitrogen was absorbed, the furnace was then backed filled with argon and the powder was permitted to cool. FIG. 1 plots this procedure.

Upon measurement, the basic lot powder had a nitrogen content of about 1,500 ppm. FIG. 1 reflects the temperature and pressure changes as well as the point of nitrogen introduction during the heat treatment.

›Example 2

A basic lot tantalum powder (72 lbs.−36 lbs. of this tantalum was doped with 50 ppm P) similar to that used in Example 1 was subjected to a heat treatment like in Example 1, wherein the basic lot powder was subjected to a hydrogen degassing procedure by raising the temperature of the basic lot powder to about 750° C. for about 1 hour and 15 minutes. During this time, the release of hydrogen gas was vented under vacuum. Once the vacuum level reaches 10 microns or lower, the temperature of the basic lot powder was then allowed to cool down to about 350° C. wherein about 80 Torr of nitrogen gas was introduced into the furnace. Like in Example 1, the nitrogen gas was essentially fully absorbed by the tantalum powder and there was a temperature increase during this time of about 60° C. Once the nitriding was finished, the furnace chamber was evacuated to 10 microns or less and then the temperature of the basic lot powder was then raised to about 1186° C. for about an hour and a half and then raised even higher to about 1350° C. for 30 minutes (sintering phase of heat treatment) and thereafter the temperature of the basic lot tantalum powder was allowed to cool off for further processing. FIG. 2 plots this procedure.

›Example 3

The powders from Examples 1 and 2 were then processed as follows:

Heat treated material which was in the form of cakes was crushed and screened using 70 mesh (US Sieve) screen. The −70 mesh powder was blended with magnesium. Magnesium content was 0.75% by weight. Magnesium blended tantalum powder was deoxidized by reacting at 850 C. This deoxidation step was conducted to lower the oxygen content of the tantalum powder to reasonable level. The deoxidized tantalum powder was then treated with nitric acid, hydrofluoric acid and deionized water to remove the residual magnesium and the magnesium oxide generated during the deoxidation process. Acid treated powder was further rinsed with deionized water until a conductivity of less than 10 micromhos/cm was attained in the DI water. The rinsed tantalum powder was dried using a vacuum dryer. A representative sample of the dried powder was taken and analyzed for physical, chemical, and electrical properties of the powder. The results are shown in the Tables 1, 2, and 3. The electrical properties were evaluated using the following procedure:

[1] Anode Fabrication:

(a) N=16 anodes per sample (b) Diam=0.1235″

Length=0.1021″ Powder Wt=100 mg Dp=5.0 g/cc

[2] Anode Sintering (NRC Furnace):

(a) 1 Sinters

1430° C.*30′(10° C. per minute ramp)

[3] 100V Ef Evaluation:

(a) Anodization:

(1) One Formation

N=8 anodes (one tree) per sample (1) tree/sample+standards

(2) Electrolyte; (0.1% H3PO4 @ 90° 3.08 mmho) (3) Constant current density: (75 ma/g) (4) Terminal Voltage=100.0 VDC+/−0.03 (5) Terminal Voltage Time=180 min −0/+5 min (6) 25° C. soak for 30 min (7) 100° C. oven for 30 min

(b) DC Leakage:

(1) Charge E=70.0+/−0.02 (2) Charge Time=30 sec & 120 sec (3) DCL Test Electrolyte=10% H3PO4 @ 21° C.

(c) Capacitance/DF:

(1) Capacitance Test Electrolyte=18% H2SO4 @ 21° C. (2) Bias=2.5 VDC (3) Frequency=120 Hz (4) Series Capacitance (5) GenRad #1658

›Example 4

A sample was prepared using basic lot tantalum powder described in Table 9. Sample was prepared by soaking 60 pounds of tantalum with 34% of deionized water containing phosphorous dopant solution to provide 100 ppm by weight of phosphorous. The powder was soaked for 16 hours. Soaked powder was transferred to Teflon coated stainless steel trays and additional 3% of deionized water was added. The wet powder was vibrated for eight to ten minutes using the vibrating table. After vibrating, the trays were allowed to sit for at least sixty minutes for any water to separate. Any water which separated was decanted. Afterwards the drying trays were transferred to a vacuum dryer. The commercial vacuum dryer was purchased from STOKES VACUUM Inc. The model number is 338J. The material in the stainless steel trays was dried for approximately 14 hours at about 195° F. and 50 torr pressure. The dried tantalum powder was then transferred to a tantalum tray for heat treatment. The heat treatment was conducted at approximately 1309° C. for about 30 minutes. The cakes were then transferred to a batch can for milling and were milled and screened using 70 mesh (US Sieve) screen. −70 mesh portion of the material was deoxidized using 2% magnesium at 850° C. and acid leached using nitric acid, hydrogen peroxide and deionized water. Powder was further rinsed with DI water until the conductivity is lowered to less than 5 micromhos/cm. Rinsed powder was dried in a vacuum dryer. Samples were deoxidized again, to lower the oxygen, using 2% magnesium at 850° C. and acid leached, rinsed and dried as described above. The final product was analyzed and the data is shown in Table 4 and 9.

Electrical evaluation was conducted using the following procedure.

[1] Anode Fabrication:

(a) Haberer Press—

(1) N=16 anodes per sample (2) non-lubed powder (3) size—0.1545″ dia×0.1225″ length (4) Dp=5.0 g/cc (5) powder wt=188 mg

[2] Anode Sintering:

(a) NRC Furnace;

1335° C.*10 (“A” ramp)

[3] 30 V Ef Evaluation:

(a) Anodization:

(1) N=8 anodes (one tree) per sample (2) Electrolyte;

E251 Test Electrolyte (0.06% H3PO4 @ 83°, 2.86 mmho)

(3) Constant current density: E251 Test current (337.5 ma/g) (4) Terminal Voltage=30.0 VDC+/ 31 0.03 (5) Terminal Voltage Time=300 min −0/+5 min (6) Soak 25° for 30 minutes (7) 100° C. oven for 30 minutes

(b) DC Leakage:

(1) Charge E=21.0+/−0.02 (2) Charge Time=30 & 120 sec (3) DCL Test Electrolyte=10% H3PO4 @ 21° C.

(c) Capacitance/DF:

(1) Capacitance Test Electrolyte=18% H2SO4 @ 21° C. (2) Bias=2.5 VDC (3) Frequency=120 Hz (4) Series Capacitance (5) GenRad #1658

Final properties of the tantalum powders are set forth in Tables 4, 5, and 9.

›Example 5

In this example, about 45 lbs. of basic lot tantalum powder per lot were nitrided as in Example 4 except the final temperature of the powder was about 1300° C. for about 30 minutes. The characteristics of the resulting nitrided tantalum are set forth in Tables 4 and 5. FIG. 3 reflects the pore size distribution of a pressed and sintered tantalum pellet and FIG. 4 reflects the cumulative pore volume for each pore size.

›Example 6

72 pounds of basic lot tantalum powder were doped with nitrogen for a target nitrogen content of 1500 ppm. In this process, the powder was heated to 740° C. followed by hydrogen degassing and then the powder was cooled down to about 325° C. At this point, nitrogen gas was introduced in the same manner as in Example 1. Following nitrogen doping, the samples were removed to determine whether the nitrogen doping distribution was uniform for all of the trays containing tantalum powder in the furnace. The particulars of doping with nitrogen and other parameters are set forth in Table 6. Table 7 (run number 5) also sets forth another experiment involving nitrogen doping for a variety of samples in the furnace with the target value of 2,500 ppm nitrogen in the final product.

As a comparison, tantalum powder was nitrided during the deoxidation stage. The nitrogen doping amount was higher but this was done in order to ensure nitrogen was absorbed in all tray samples. Details are set forth on Table 8.

As can be seen from Tables 6 and 7, the amount of nitrogen content on average was very close to the target value in each instance and the overall difference between the various trays was within acceptable parameters. When nitriding occurred during the deoxidation stage, the non-uniform nitrogen distribution from tray to tray was observed as can be seen in Table 8. In more detail, there was large differences in absorbed nitrogen amounts from tray to tray. Where nitriding during heat treatment caused a variation of about 1,000–1,500 ppm, nitriding during deoxidation caused a variation over 20,000 ppm.

Other embodiments of the present invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims and equivalents thereof.

›Tables in the description — 9
TABLE 1 — Used HP410 basic lot blend. 36 lbs. From HP410-B-121828 and 36 lbs. From HP410-B-121829. 36 pounds was processed without “P” and the other 36 pounds was doped with 50 ppm “P” using NH4PF6. Powder was heated to 740° C. followed by degas, cool down to 325° C. and nitrogen was introduced. 1500 ppm AIM. This is heat treated for 90 min @1180° C. followed by 30 min @ 1350° C. (SPC: 1447 C)
8187-11-B8187-11-NM2
Basic LotFinished product
HT set point30 min @ 1350 C
FSS (microns)0.892.54
Scott (gms/inch3)18.731.0
BET (m2/gm)1.000.59
Na (ppm)62
K (ppm)114
P (ppm)484
C (ppm)1224
O (ppm)28221670
N (ppm)292326
H (ppm)55736
Si (ppm)24019
Fe (ppm)44
Ni (ppm)510
Cr (ppm)44
Nb (ppm)2424
Ti (ppm)44
Mn (ppm)44
Sn (ppm)44
Ca (ppm)44
Al (ppm)44
Mo (ppm)44
W (ppm)2424
Zr (ppm)44
Mg (ppm)44
B (ppm)33
Co (ppm)44
Cu (ppm)44
Screens
+602.4
60/10014.7
100/20026.4
200/32515.2
325/4009.0
−40032.3
FLOW (mg/sec)163
Crush Str.26.0 lbs.
1480 C 50 V Cap25970
DCL (nA/CV)0.07
Fliers0/8
Shrinkage3.3
Sinter Density5.4
Press Density 5.0 g/cc
TABLE 2 — (Example 1) Used HP 410 basic lot blend. 36 lbs. From HP 410-B-121828 and 36 lbs. from HP410-B-121829. 36 pounds was processed without “P” and the other 36 pounds was doped with 50 ppm “P” using NH4PF6. Powder was heated to 740° C. followed by degas, cool down to 325° C. and nitrogen was introduced. 1500 ppm AIM. This is heat treated for 90 min @ 1180° C. followed by 30 min at 1350° C. (SPC: 1447 C).
8187-11-B8187-11-NM2
Basic LotFinished Product
HT (SPC)1447 C
FSS (microns)0.892.54
Scott (gms/inch3)18.731.0
BET (m2/gm)1.000.59
C (ppm)1224
O (ppm)28221670
N (ppm)292326
H (ppm)55736
Screens
+602.4
60/10014.7
100/20026.4
200/32515.2
325/4009.0
−40032.3
FLOW (mg/sec)163
1430 C 100 V C
Cap (CV/gm)23,829
DCL (nA/CV)0.33
Shrinkage0.1
Sinter Density5.1
TABLE 3 — (Example 2)
8187-11-B8187-19-NM
Basic LotFinal Product
HT (SPC)1458 C
FSS (microns) (mod)0.892.35
Scott (gms/inch3)18.729.4
BET (m2/gm)0.37
C (ppm)1223
O (ppm)28221959
N (ppm)291333
H (ppm)55750
Screens
+600.0
60/1007.3
100/20028.2
200/32518.7
325/40010.2
−40035.5
1430 C 100 V Cap
Capacitance (CV/gm)24,885
DCL (nA/CV)0.24
Shrinkage−0.6
Sinter Density4.8
TABLE 4 — Physical, Chemistry Properties of Nitrided Powder
8280-66-8280-67-8280-68-
nm2anm2anm2aAverage
Modified FSS (microns)2.912.392.322.54
Scott (gms/in3)2827.827.927.9
BET1.111.031.151.10
C (ppm)60565758
O (ppm)3288305829783180
N (ppm)2509237924832457
H (ppm)71818779.7
Si (ppm)5544.7
Ni (ppm)17448.3
Fe (ppm)4444.0
Cr (ppm)4444.0
Cb (ppm)24242424.0
Ti (ppm)4444.0
Mn (ppm)4444.0
Sn (ppm)4444.0
Ca (ppm)4444.0
Al (ppm)4444.0
Mo (ppm)4444.0
W (ppm)24242424.0
Zr (ppm)4444.0
Mg (ppm)55106.7
B (ppm)1111.0
Co (ppm)4444.0
Cu (ppm)4444.0
Na (ppm)6455.0
K (ppm)29262827.7
Screens
+600000.0
−60/+10023.423.730.525.87
−100/+20033.135.233.233.83
−200/+32515.614.612.614.27
−325/+4008.27.86.87.60
−40019.718.716.918.43
Flow (mg/sec)97.4103.4103.3101.4
mtrack
per 1027.7229.8322.3326.63
per 50118.31119.08109.43115.61
per 90261.04260.8265.11262.32
SA0.1020.0940.1270.11
TABLE 5 — Electrical Properties of Nitrided Powder Press Density in each case was 5.0 g/cc.
8280-66-8280-67-8280-68-
NM2ANM2ANM2AAverage
Sintering
Temp.
1335 C. 30 V36.335.941.037.7
Cap (cv/gm)67,72668,68668,89868,437
DCL (na/cv)0.310.270.360.32
Fliers0100.33
Sint. Den.5.205.175.185.18
Shrinkage1.681.811.611.70
Sintering
Temp.
1265° C. 30 V
Cap (cv/gm)70,26671,19871,76971,077
DCL (na/cv)0.300.350.260.30
Fliers0000.00
Sint. Den.4.944.924.954.94
Shrinkage0.050.110.160.11
Sintering
Temp.
1335° C. 60 V
Cap (cv/gm)53,80254,71954,49554,338
DCL (na/cv)0.530.380.420.44
Fliers0000.00
Sint. Den.5.195.175.185.18
Shrinkage1.681.811.611.70
Sintering
Temp.
1265° C. 60 V
Cap (cv/gm)55,54156,46056,37056,124
DCL (na/cv)0.630.440.430.50
Fliers0100.33
Sint. Den.4.944.924.954.94
Shrinkage0.050.110.160.11
TABLE 6 — 72 pounds of HP410 basic lot (C410-S-128793) was doped with nitrogen to an aim value of 1500 ppm. Powder was heated to 740° C. followed by degas, cool down to 325° C. and nitrogen was introduced.
Tray #PositionOxygenNitrogen
8187-10-1TTray 1Top3848598
8187-10-1MTray 1Middle44672172
8187-10-1BTray 1Bottom44981749
8187-10-2TTray 2Top39241056
8187-10-2MTray 2Middle40551539
8187-10-2BTray 2Bottom45671570
8187-10-3TTray 3Top3598938
8187-10-3MTray 3Middle43861586
8187-10-3BTray 3Bottom46051328
8187-10-4TTray 4Top3700719
8187-10-4MTray 4Middle4041696
8187-10-4BTray 4Bottom4269673
8187-10-5TTray 5Top3794813
8187-10-5MTray 5Middle42071689
8187-10-5BTray 5Bottom44022297
8187-10-6TTray 6Top36621300
8187-10-6MTray 6Middle43992382
8187-10-6BTray 6Bottom44241612
8187-10-7TTray 7Top36711279
8187-10-7MTray 7Middle43212084
8187-10-7BTray 7Bottom44191702
8187-10-8TTray 8Top39261074
8187-10-8MTray 8Middle4228679
8187-10-8BTray 8Bottom4692554
8187-10-NBZBlend41651420
Avg.41711329
Ta Powder weight: 72 pounds
Nitrogen aim Value: 1500 ppm
Nitrogen Flow rate: 3 liters/min
Nitrogen addition Time: 16 minutes
Total pressure: 134 torr
Nitrogen Doping Temp.: 325 C Ramp up @ 1 C/min.
Total Nitrogen absorption time: 240 minutes
Final Temperature achieved: 498° C.
Nitrogen Analysis for 8187-10-H run
FrontRear
Tray #1Top598813
Middle21721689
Bottom17492297
Tray #2Top10561300
Middle15392382
Bottom15701512
Tray #3Top9381279
Middle15862084
Bottom13281702
Tray #4Top7191074
Middle696679
Bottom573554
Average12101447
1329
Blend1420
TABLE 7 — 72 pounds of HP410 basic lot (C410-S-128793) was doped with nitrogen to an aim value of 2500 ppm. PLC crashed during the cool down phase. The run was aborted and rerun on May 11, 1999. Powder was heated to 740° C. followed by degas, cool down to 325° C. and nitrogen was introduced. Hy-
Tray #PositionCarbonOxygenNitrogendrogen
8187-2-1TTray 1Top456612107644
8187-2-1MTray 1Middle285705227829
8187-2-1BTray 1Bottom386136233530
8187-2-2TTray 2Top486247231433
8187-2-2MTray 2Middle285646234627
8187-2-2BTray 2Bottom425136221323
8187-2-3TTray 3Top515881200238
8187-2-3MTray 3Middle295618174226
8187-2-3BTray 3Bottom355853183830
8187-2-4TTray 4Top56593694637
8187-2-4MTray 4Middle26548166427
8187-2-4BTray 4Bottom34586968125
8187-2-5TTray 5Top536463146743
8187-2-5MTray 5Middle335706423727
8187-2-5BTray 5Bottom395987346427
8187-2-6TTray 6Top445784247838
8187-2-6MTray 6Middle505743324021
8187-2-6BTray 6Bottom396035325916
8187-2-7TTray 7Top426131231936
8187-2-7MTray 7Middle285708218926
8187-2-7BTray 7Bottom356027216126
8187-2-8TTray 8Top585848136431
8187-2-8MTray 8Middle27562484230
8187-2-8BTray 8Bottom33584867019
8187-2-NBBlend365821240721
Avg.395922200130
Nitrogen Analysis for 8187-2-H run
FrontRear
Tray #1Top10761467
Middle22784237
Bottom23353464
Tray #2Top23142478
Middle23463240
Bottom22133259
Tray #3Top20022319
Middle17422189
Bottom18382161
Tray #4Top9461364
Middle664842
Bottom581670
Average169520012308
Blend2407
Ta Powder weight: 70 pounds
Nitrogen aim Value: 2500 ppm
Nitrogen Flow rate: 3 liters/min
Nitrogen addition Time: 24 minutes
Total pressure: 205 torr
Nitrogen Doping Temp.: 325 C. Ramp up @ 1 C./min.
Total Nitrogen absorption time: 176 minutes
Final Temperature achieved: 489° C.
TABLE 8 — Nitriding Run 2500 ppm Target. All batches were deoxed using 0.75% Magnesium @ 850° C. (100 min soak + 60 min vacuum). Nitriding parameters 450° C. with 5000 ppm set point @ 2.5 Liters/min. Flow rate. No pressure raise during nitrogen doping. After deox and acid leaching Non-uniform nitrogen observed when nitrogen doping was conducted during its deox process.
SampleNitrogen (ppm)Oxygen (ppm)
8030-95-M19382093
8030-95-M2146701883
8030-95-M3203302429
8030-95-M4190502466
8030-95-M5271901991
8030-95-M6177401767
8030-95-M7109202067
8030-95-M856211773
8030-95-M929092373
8030-95-M1023522401
8030-95-M1115462127
8030-95-M1211762052
8030-95-M136302870
8030-95-M145392191
TABLE 9 — Process Basic lots were soaked with 34% water. Water agglomerated with 37% water. Materials was heat-treated at 1309 spc anode temperature. Nitrogen was doped before heating up. Target for Nitrogen doping is 2500 ppm.
Basic lotsFinished Material
8280-66-b8280-67-nm2a
Modified FSS (microns)0.372.39
Scott (gms/in3)12.327.8
BET2.741.03
C (ppm)4656
O (ppm)86823058
N (ppm)432379
H (pm)148281
Screens
+600
−60/+10023.7
−100/+20035.2
−200/+32514.6
−325/+4007.8
−40018.7
Flow103.4
1335 C 30 V
Cap (cv/gm)68,686
DCL (na/cv)0.27
Fliers1
Sint. Den.5.17
Shrinkage1.81

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Classifications

10 codes
IPC · International Patent Classification
Section B — Performing operations; transporting
  • B22F1/12
  • B22F1/145
Section C — Chemistry; metallurgy
  • C22C27/02
  • C23C8/24
  • C23C8/80
Section H — Electricity
  • H01G9/04
  • H01G9/052
USPC · US Patent Classification
419/13148/513419/54

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