Inventor

Yao-Wen Chang

Inventor

Taipei, TW

Overview

1996–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 120 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices18%

H10DInorganic electric semiconductor devices16%

G11CStatic stores11%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

H10BElectronic memory devices9%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

H10NElectric solid-state devices not otherwise provided for6%

G06FElectric digital data processing6%

H04LTransmission of digital information, e.g. telegraphic communication2%

C23CCoating metallic material2%

PatentTitleYear

D0909383Handheld computer device housing2021 10,879,266Semiconductor device and operating method thereof2020 10,796,954Semiconductor structure and method for forming the same2020 10,790,362Semiconductor structure and manufacturing method of the same2020 10,770,144Non-volatile memory and program method thereof2020 10,763,273Vertical GAA flash memory including two-transistor memory cells2020 10,741,262NAND flash operating techniques mitigating program disturbance2020 10,741,250Non-volatile memory device and driving method thereof2020 10,727,077Structure and method to expose memory cells with different sizes2020 10,727,399Top electrode cap structure for embedded memory2020 10,713,410Method for legalizing mixed-cell height standard cells of IC2020 10,658,318Film scheme for bumping2020 10,558,779Method of redistribution layer routing for 2.5-dimensional integrated circuit packages2020 10,505,103Top electrode cap structure for embedded memory2019 10,497,773Method to improve MIM device performance2019 10,468,587Semiconductor structure, electrode structure and method of forming the same2019 10,290,701MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same2019 10,276,779Top electrode cap structure for embedded memory2019 10,275,559Method for legalizing mixed-cell height standard cells of IC2019 10,176,999Semiconductor device having a multi-layer, metal-containing film2019 10,163,651Structure and method to expose memory cells with different sizes2018 10,115,896Semiconductor device and method of manufacturing the same2018 10,103,078Formation of getter layer for memory device2018 10,047,039Compounds, compositions and methods for treating tumors2018 10,043,705Memory device and method of forming thereof2018 9,978,457Method for operating memory array2018 9,956,191Composition of 5-nitrobenzoate derivatives as anti-metastatic agent that inhibits tumor cell-induced platelet aggregation2018 9,954,166Embedded memory device with a composite top electrode2018 9,940,424Systems and methods for minimum-implant-area aware detailed placement2018 9,928,334'Redistribution layer routing for integrated fan-out wafer-level chip-scale packages'2018 9,887,134'Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices'2018 9,858,995'Method for operating a memory device'2018 9,830,416Method for analog circuit placement2017 9,825,117'MIM/RRAM structure with improved capacitance and reduced leakage current'2017 9,818,885'Deposited material and method of formation'2017 9,761,799'Bottom electrode structure for improved electric field uniformity'2017 9,722,011'Film scheme for MIM device'2017 9,711,713'Semiconductor structure, electrode structure and method of forming the same'2017 9,685,389'Formation of getter layer for memory device'2017 9,633,920'Low damage passivation layer for III-V based devices'2017 9,625,520'Latch-up test device and method for testing wafer under test'2017 9,604,910'Composition of 5-nitrobenzoate derivatives as anti-metastatic agent that inhibits tumor cell-induced platelet aggregation'2017 9,558,988'Method for filling the trenches of shallow trench isolation (STI) regions'2017 9,543,375'MIM/RRAM structure with improved capacitance and reduced leakage current'2017 9,524,868'Deposited material and method of formation'2016 9,509,137'Electrostatic discharge protection device'2016 9,502,649'Bottom electrode structure for improved electric field uniformity'2016 9,466,375'Memory device and programming method thereof'2016 9,460,928'Method for manufacturing semiconductor devices'2016 9,450,183'Memory structure having top electrode with protrusion'2016 9,443,955'Semiconductor device and method for fabricating the same'2016 9,437,303'Programming method of memory array'2016 9,425,061'Buffer cap layer to improve MIM structure performance'2016 9,324,789'Memory device and method for fabricating the same'2016 9,281,195'Semiconductor structure'2016 9,257,642'Protective sidewall techniques for RRAM'2016 9,257,272'Deposited material and method of formation'2016 9,257,497'Metal-insulator-metal (MIM) capacitor techniques'2016 9,215,257'Terminal device and method for exchanging VoIP signaling'2015 9,208,892'Operation method of multi-level memory'2015 9,082,620'Semiconductor device'2015 8,952,484'Non-volatile memory having isolation structures in and above a substrate and manufacturing method thereof'2015 8,937,347'Non-volatile memory'2015 8,929,134'Method of programming a flash memory by enhancing the channel voltage of a program-inhibit bit line with a boosted inhibit scheme'2015 8,902,880'Local terminal device and method for exchanging VoIP signaling'2014 8,875,083'Routing method for flip chip package and apparatus using the same'2014 8,836,005'Memory array'2014 8,817,436'Electrostatic discharge protection device'2014 8,776,000'Method of implementing timing engineering change order'2014 8,759,234'Deposited material and method of formation'2014 8,748,963'Non-volatile memory and manufacturing method thereof'2014 8,689,164'Method of analytical placement with weighted-average wirelength model'2014 8,675,322'Electrostatic discharge protection device'2014 8,661,388'Method of packing-based macro placement and semiconductor chip using the same'2014 8,644,081'Flash memory device and programming method thereof'2014 8,578,317'Routing method for flip chip package and apparatus using the same'2013 8,572,542'Clock-tree structure and method for synthesizing the same'2013 8,476,694'Memory cell, memory device and method for manufacturing memory cell'2013 8,462,773'Default gateway, terminal device, and method for exchanging VoIP signaling'2013 8,451,729'Embedded device and packet forwarding method'2013 8,411,506'Non-volatile memory and operating method of memory cell'2013 8,338,880'Flash memory'2012 8,340,141'Method of operating all-fiber-based ultra pulse laser system'2012 8,261,223'Hierarchy-based analytical placement method capable of macro rotation within an integrated circuit'2012 8,259,492'Method of reading dual-bit memory cell'2012 8,248,937'Packet forwarding device and load balance method thereof'2012 8,228,727'Method for programming multi-level cell and memory apparatus'2012 8,213,469'Linear cavity of all-fiber-based ultra short pulse laser system'2012 8,203,879'Non-volatile memory and operation method thereof'2012 8,189,441'Method of recognizing track pitch of optical disk'2012 8,098,522'Non-volatile memory and operation method thereof'2012 8,093,665'Semiconductor device and method for fabricating the same'2012 8,072,803'Memory device and methods for fabricating and operating the same'2011 8,040,927'Ring or linear cavity of all-fiber-based ultra short pulse laser system and method of operating the same'2011 8,014,203'Memory device and methods for fabricating and operating the same'2011 8,004,890'Operation method of non-volatile memory'2011 7,898,873'Window enlargement by selective erase of non-volatile memory cells'2011 7,830,707'Method of reading dual-bit memory cell'2010 7,826,262'Operation method of nitride-based flash memory and method of reducing coupling interference'2010 7,808,037'High voltage device'2010 7,799,638'Method for forming a memory array'2010 7,707,536'V-shaped multilevel full-chip gridless routing'2010 7,692,968'Operation method of non-volatile memory and method of improving coupling interference from nitride-based memory'2010 7,603,640'Multilevel IC floorplanner'2009 7,486,086'Method for measuring intrinsic capacitance of a metal oxide semiconductor (MOS) device'2009 7,362,122'Method and circuit for extracting current-voltage characteristics of device'2008 6,834,263'NROM structure'2004 6,829,174'Method of narrowing threshold voltage distribution'2004 6,756,638'MOSFET structure with reduced junction capacitance'2004 6,683,352'Semiconductor device structure'2004 6,624,737'Voltage regulated circuit with well resistor divider'2003 6,549,029'Circuit and method for measuring capacitance'2003 6,486,028'Method of fabricating a nitride read-only-memory cell vertical structure'2002 6,481,860'Circular optical reflection apparatus'2002 6,465,849'CMOS structure having dynamic threshold voltage'2002 6,320,786'Method of controlling multi-state NROM'2001 6,285,483'Optical scanner'2001 6,091,516'Device for holding and moving a contact image sensor'2000 5,769,515'Optical scanners with an improved chassis locking means'1998 5,537,240'Brilliance control apparatus of light source in an optical scanner'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2002Based in Miaoli, TW· patent location history

2001–2020Patents assigned to MACRONIX INT CO LTD (52)· patent assignee history

2001–2020Based in Hsinchu, TW· patent location history

2009–2020Based in Taipei, TW· patent location history

2011–2015Patents assigned to CHANG YAO-WEN (28)· patent assignee history

2011–2015Patents assigned to LU TAO-CHENG (10)· patent assignee history

2011–2015Patents assigned to YANG I-CHEN (7)· patent assignee history

2014–2021Based in New Taipei, TW· patent location history

2015–2020Based in Zhubei City, TW· patent location history

2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (35)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MACRONIX INT CO LTD	52	2001–2020
TAIWAN SEMICONDUCTOR MFG CO LTD	35	2016–2020
CHANG YAO-WENself	28	2011–2015
LU TAO-CHENG	10	2011–2015
YANG I-CHEN	7	2011–2015

Locations

Location	Patents	Span
Taipei, TW	50	2009–2020
Hsinchu, TW	47	2001–2020
Zhubei City, TW	5	2015–2020
Miaoli, TW	4	1996–2002
New Taipei, TW	3	2014–2021