Inventor
Xiaoye Zhao
Inventor
Mountain View, CA, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1042%
H01JElectric discharge tubes or discharge lamps29%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
G11BInformation storage based on relative movement between record carrier and transducer3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
8,828,248'Method for defect reduction in magnetic write head fabrication'20148,231,799'Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone'20128,048,806'Methods to avoid unstable plasma states during a process transition'20117,575,007'Chamber recovery after opening barrier over copper'20097,540,971'Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content'20097,541,292'Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones'20097,435,685'Method of forming a low-K dual damascene interconnect structure'20087,431,859'Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation'20087,413,990'Method of fabricating a dual damascene interconnect structure'20087,309,448'Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material'20077,300,597'Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material'20077,256,134'Selective etching of carbon-doped low-k dielectrics'20077,186,943'MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20077,132,618'MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20067,132,369'Method of forming a low-K dual damascene interconnect structure'20067,115,517'Method of fabricating a dual damascene interconnect structure'20067,030,335'Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20066,921,727'Method for modifying dielectric characteristics of dielectric layers'20056,894,245'Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20056,677,712'Gas distribution plate electrode for a plasma receptor'20046,586,886'Gas distribution plate electrode for a plasma reactor'20036,153,530'Post-etch treatment of plasma-etched feature surfaces to prevent corrosion'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2012Patents assigned to APPLIED MATERIALS INC (21)· patent assignee history
2000–2014Based in Mountain View, CA, US· patent location history
2011Based in Palo Alto, CA, US· patent location history
2012Patents assigned to BERA KALLOL (1)· patent assignee history
2012Patents assigned to BRILLHART PAUL LUKAS (1)· patent assignee history
2012Patents assigned to DOAN KENNY L (1)· patent assignee history
2012Patents assigned to GEOFFRION BRUNO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 21 | 2000–2012 |
| BERA KALLOL | 1 | 2012 |
| BRILLHART PAUL LUKAS | 1 | 2012 |
| DOAN KENNY L | 1 | 2012 |
| GEOFFRION BRUNO | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Mountain View, California, US | 21 | 2000–2014 |
| Palo Alto, California, US | 1 | 2011 |