Inventor
Seong-Jae Lee
Inventor
Seoul, KR
Overview
Patents· 75 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices18%
B65DContainers for storage or transport of articles or materials, e.g. bags, barrels, bottles, boxes, cans, cartons, crates, drums, jars, tanks, hoppers, forwarding containers12%
B82YSpecific uses or applications of nanostructures8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure5%
H04BTransmission3%
G01RMeasuring electric variables3%
H04WWireless communication networks3%
G01DMeasuring not specially adapted for a specific variable2%
PatentTitleYear
11,005,259Monitoring and load controlling system for switchboard202110,898,152Stroke diagnosis apparatus based on artificial intelligence and method202110,763,618Apparatus for emergency disconnection of battery charge inlet of electric vehicle202010,717,504Shut-off valve for pneumatic fender202010,707,012Chip electronic component202010,557,000Method for preparing oblate polymer particle202010,371,549Magnetic sensor system201910,057,877Location estimation method and electronic device for performing the same20189,751,662'Container intended for liquid and having a pressure adjustment surface for constant discharge'20179,650,190'Accommodating device for different types of material'20179,617,051'Bottle cap'20179,598,200'Connection die coupled with container neck in use'20179,448,087'Contactless magnetic linear position sensor'20169,067,715'Bottle cap'20158,991,596'Cap assembly having storage chamber for secondary material with inseparable working member'20158,944,244'Cap assembly having storage chamber for secondary material with movable working member'20158,844,715'Cap assembly having storage chamber for secondary material with integral type working member'20148,844,716'Cap assembly having storage chamber for secondary material with movable working member'20148,836,458'Method for imparting annular oppositely polarized magnetically conditioned regions to a disk shaped member'20148,807,362'Bottle cap'20148,635,917'Magnetic torque sensor for transmission converter drive plate'20148,631,933'Bottle cap'20148,578,794'Magnetoelastic torque sensor with ambient field rejection'20138,485,353'Cap assembly having storage chamber for secondary material with inseparable working member'20138,424,393'Magnetic torque sensor for transmission converter drive plate'20138,422,314'Device and method for achieving SRAM output characteristics from DRAMS'20138,413,802'Pressurization type cap assembly having storage chamber for secondary material'20138,336,706'Cap assembly having storage chamber for secondary material with movable working member'20128,328,010'Cap assembly having storage chamber for secondary material with movable working member'20128,215,505'Structure of cap having storage space'20128,104,610'Method and structure for mixing different materials'20128,087,304'Magnetoelastic torque sensor with ambient field rejection'20127,981,735'Method of manufacturing a Schottky barrier tunnel transistor'20117,947,585'Method of manufacturing semiconductor device'20117,929,906'Forward and reverse link automatic power controlled repeater and method'20117,863,121'Method for fabricating Schottky barrier tunnel transistor'20117,828,140'Structure of cap having storage space'20107,831,203'Radio frequency repeater for cancelling feedback interference signal with built in antenna'20107,750,378'Field effect transistor and method of fabricating the same'20107,745,316'Method for fabricating Schottky barrier tunnel transistor'20107,662,282'Permanent magnet array iron filter'20107,656,776'Data storing and reading apparatus for storing data in a nano-device'20107,617,929'Method and structure for mixing different materials in a pouch container'20097,605,065'Schottky barrier tunnel single electron transistor and method of manufacturing the same'20097,566,642'Process of manufacturing an N-type Schottky barrier tunnel transistor'20097,545,000'Schottky barrier tunnel transistor and method of manufacturing the same'20097,539,119'Data storage apparatus using current switching in metal oxide layer'20097,537,883'Method of manufacturing nano size-gap electrode device'20097,486,933'Multi-path interference removing for wireless relay system apparatus and method using by same channel frequency'20097,365,533'Magneto-optic remote sensor for angular rotation, linear displacements, and evaluation of surface deformations'20087,312,510'Device using ambipolar transport in SB-MOSFET and method for operating the same'20077,268,407'Schottky barrier tunnel single electron transistor and method of manufacturing the same'20077,195,962'Ultra short channel field effect transistor and method of fabricating the same'20077,187,933'Channel assignment method for multi-FA CDMA cellular systems'20077,098,092'Single electron device, method of manufacturing the same, and method of simultaneously manufacturing single electron device and MOS transistor'20067,060,580'Field effect transistor and method of fabricating the same'20067,005,356'Schottky barrier transistor and method of manufacturing the same'20066,999,772'Channel assignment method for multi-FA CDMA cellular systems'20066,995,452'MOSFET device with nanoscale channel and method of manufacturing the same'20066,797,629'Method of manufacturing nano transistors'20046,770,534'Ultra small size vertical MOSFET device and method for the manufacture thereof'20046,723,587'Ultra small-sized SOI MOSFET and method of fabricating the same'20046,693,294'Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same'20046,680,663'Permanent magnet structure for generation of magnetic fields'20046,638,823'Ultra small size vertical MOSFET device and method for the manufacture thereof'20036,620,668'Method of fabricating MOS transistor having shallow source/drain junction regions'20036,323,504'Single-electron memory device using an electron-hole coulomb blockade'20016,037,198'Method of fabricating SOI wafer'20005,994,714'Quantum diffraction transistor'19995,940,696'Method of manufacturing a quantum diffraction transistor'19995,883,419'Ultra-thin MO-C film transistor'19995,880,484'Lateral resonant tunneling transistor having two non-symmetric quantum dots'19995,872,372'Thin film transistor with piezoelectric film'19995,760,675'Piezoresistive device and fabrication method thereof'19985,519,232'Quantum interference device'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2011Patents assigned to KOREA ELECTRONICS TELECOMM (33)· patent assignee history
1996–2021Based in Seoul, KR· patent location history
2003–2011Based in Daejon, KR· patent location history
2004–2013Based in Daejeon, KR· patent location history
2004–2010Based in Ames, IA, US· patent location history
2009–2017Patents assigned to LEE SEONG-JAE (22)· patent assignee history
2009–2017Patents assigned to LEE JEONG-MIN (16)· patent assignee history
2012–2020Patents assigned to LEE SEONG JAE (3)· patent assignee history
2012–2019Based in Mount Prospect, IL, US· patent location history
2013–2016Patents assigned to METHODE ELECTRONICS INC (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOREA ELECTRONICS TELECOMM | 33 | 1996–2011 |
| LEE SEONG-JAEself | 22 | 2009–2017 |
| LEE JEONG-MIN | 16 | 2009–2017 |
| METHODE ELECTRONICS INC | 5 | 2013–2016 |
| LEE SEONG JAEself | 3 | 2012–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 33 | 1996–2021 |
| Daejeon, KR | 18 | 2004–2013 |
| Mount Prospect, Illinois, US | 7 | 2012–2019 |
| Daejon, KR | 3 | 2003–2011 |
| Ames, IA, US | 3 | 2004–2010 |