Inventor
Peter Almern Losee
Inventor
Clifton Park, NY, US
Overview
Patents· 44 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H01LSemiconductor devices32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
H03KPulse technique2%
G01KMeasuring temperature1%
G06FElectric digital data processing1%
H05KPrinted circuits1%
PatentTitleYear
11,031,472Systems and methods for integrated diode field-effect transistor semiconductor devices202110,957,759Systems and methods for termination in silicon carbide charge balance power devices202110,955,297Systems and methods for monitoring junction temperature of a semiconductor switch202110,937,870Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions202110,636,660Super-junction semiconductor device fabrication202010,608,079High energy ion implantation for junction isolation in silicon carbide devices202010,600,649Systems and method for charge balanced semiconductor power devices with fast switching capability202010,600,871Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions202010,586,846System and method for edge termination of super-junction (SJ) devices202010,566,324Integrated gate resistors for semiconductor power conversion devices202010,541,338Edge termination designs for silicon carbide super-junction power devices202010,541,300Semiconductor device and method of making thereof202010,403,711Designing and fabricating semiconductor devices with specific terrestrial cosmic ray (TCR) ratings201910,403,623Gate networks having positive temperature coefficients of resistance (PTC) for semiconductor power conversion devices201910,388,737Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) devices having an optimization layer201910,347,489Semiconductor devices and methods of manufacture201910,269,951Semiconductor device layout and method for forming same201910,243,039Super-junction semiconductor power devices with fast switching capability201910,211,304Semiconductor device having gate trench in JFET region201910,199,465Cellular layout for semiconductor devices201910,192,958Cellular layout for semiconductor devices201910,096,681Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells201810,056,457Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions201810,002,920System and method for edge termination of super-junction (SJ) devices20189,997,507Semiconductor assembly and method of manufacture20189,899,512'Silicon carbide device and method of making thereof'20189,748,341'Metal-oxide-semiconductor (MOS) devices with increased channel periphery'20179,735,237'Active area designs for silicon carbide super-junction power devices'20179,735,263'Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the same'20179,716,144'Semiconductor devices having channel regions with non-uniform edge'20179,704,949'Active area designs for charge-balanced diodes'20179,633,998'Semiconductor device and method for making the same'20179,406,762'Semiconductor device with junction termination extension'20169,123,798'Insulating gate field effect transistor device and method for providing the same'20159,024,328'Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture'20159,006,027'Systems and methods for terminating junctions in wide bandgap semiconductor devices'20158,815,721'Semiconductor device and method of manufacturing the same'20148,691,634'Optically triggered semiconductor device and method for making the same'20148,536,641'Semiconductor device'20138,536,617'Optically triggered semiconductor device and method for making the same'20138,278,711'Semiconductor device and method of making the same'20128,232,637'Insulated metal substrates incorporating advanced cooling'20127,829,402'MOSFET devices and methods of making'20107,144,797'Semiconductor device having multiple-zone junction termination extension, and method for fabricating the same'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2021Based in Clifton Park, NY, US· patent location history
2010–2021Patents assigned to GEN ELECTRIC (43)· patent assignee history
2010Based in Rensselaer, NY, US· patent location history
2012–2017Patents assigned to LOSEE PETER ALMERN (8)· patent assignee history
2012–2015Patents assigned to ARTHUR STEPHEN DALEY (5)· patent assignee history
2013–2017Patents assigned to ELASSER AHMED (4)· patent assignee history
2013–2017Patents assigned to VERT ALEXEY (3)· patent assignee history
2013Based in Niskayuna, NY, US· patent location history
2015–2017Based in Starkville, MS, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GEN ELECTRIC | 43 | 2010–2021 |
| LOSEE PETER ALMERNself | 8 | 2012–2017 |
| ARTHUR STEPHEN DALEY | 5 | 2012–2015 |
| ELASSER AHMED | 4 | 2013–2017 |
| VERT ALEXEY | 3 | 2013–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Clifton Park, New York, US | 38 | 2006–2021 |
| Starkville, MS, US | 4 | 2015–2017 |
| Niskayuna, New York, US | 1 | 2013 |
| Rensselaer, New York, US | 1 | 2010 |