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Inventor

Nien-Yu Tsai

Inventor
Taichung, TW

Overview

17→
Patents
2000–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G06Fprimary
G06FElectric digital data processing21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10DInorganic electric semiconductor devices13%
H01LSemiconductor devices10%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices8%
H10BElectronic memory devices8%
Y02PClimate change mitigation technologies in the production or processing of goods5%
PatentTitleYear
11,106,852Standard cell and semiconductor device including anchor nodes and method of making202111,017,148Multi-patterning graph reduction and checking flow method202110,713,407Standard cell and semiconductor device including anchor nodes202010,430,544Multi-patterning graph reduction and checking flow method201910,162,928Method of designing a semiconductor device, system for implementing the method and standard cell201810,121,694Methods of manufacturing a semiconductor device20189,514,266'Method and system of determining colorability of a layout'20169,038,010'DRC format for stacked CMOS design'20158,895,447'Semiconductor hole structure'20146,998,277'Method of planarizing spin-on material layer and manufacturing photoresist layer'20066,743,726'Method for etching a trench through an anti-reflective coating'20046,514,817'Method of forming shallow trench'20036,410,417'Method of forming tungsten interconnect and vias without tungsten loss during wet stripping of photoresist polymer'20026,312,983'Etching method for reducing bit line coupling in a DRAM'20016,306,772'Deep trench bottle-shaped etching using Cl2 gas'20016,143,653'Method of forming tungsten interconnect with tungsten oxidation to prevent tungsten loss'20006,071,823'Deep trench bottle-shaped etch in centura mark II NG'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2006Patents assigned to PROMOS TECHNOLOGIES INC (6)· patent assignee history
2000–2001Patents assigned to MOSEL VITELIC INC (3)· patent assignee history
2000–2001Patents assigned to SIEMENS AG (3)· patent assignee history
2000–2001Patents assigned to PROMOS TECHNOLOGY INC (2)· patent assignee history
2000–2014Based in Hsinchu, TW· patent location history
2000–2006Based in Taipei, TW· patent location history
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (8)· patent assignee history
2015–2021Based in Taichung, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD82015–2021
PROMOS TECHNOLOGIES INC62000–2006
MOSEL VITELIC INC32000–2001
SIEMENS AG32000–2001
PROMOS TECHNOLOGY INC22000–2001
Locations
LocationPatentsSpan
Taichung, TW82015–2021
Hsinchu, TW52000–2014
Taipei, TW42000–2006