LexDanaLexDanabeta
Inventor

Yuan-Sheng Tyan

Inventor
Webster, NY, US

Overview

71→
Patents
1980–2012
Patent span
General tagging of new technological developments
Primary field (CPC Y)

Patents· 71 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer25%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests21%
H10KOrganic electric solid-state devices18%
Y10TTechnical subjects covered by former us classification13%
H05BElectric heating6%
C23CCoating metallic material3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
C03CChemical composition of glasses, glazes or vitreous enamels1%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted1%
PatentTitleYear
8,272,910'Electroluminescent device having improved light output'20128,057,916'OLED device with improved performance'20118,034,465'Phosphorescent oled having double exciton-blocking layers'20117,951,421'Vapor deposition of a layer'20117,911,133'Electroluminescent device having improved light output'20117,888,858'Light emitting diode device incorporating a white light emitting layer in combination with a plurality of optical microcavities'20117,859,188'LED device having improved contrast'20107,851,995'Electroluminescent device having improved light output'20107,687,990'OLED device with short reduction'20107,602,118'OLED device having improved light output'20097,594,839'OLED device having improved light output'20097,564,181'Performance enhancement layer for OLED devices'20097,535,646'Light emitting device with microlens array'20097,268,485'White-emitting microcavity OLED device'20077,183,707'OLED device with short reduction'20077,169,232'Producing repetitive coatings on a flexible substrate'20077,129,634'Color OLED with added color gamut pixels'20067,057,339'OLED with color change media'20067,034,470'Serially connecting OLED devices for area illumination'20067,033,850'Roll-to-sheet manufacture of OLED materials'20067,030,553'OLED device having microcavity gamut subpixels and a within gamut subpixel'20067,019,331'Green light-emitting microcavity OLED device using a yellow color filter element'20066,965,197'Organic light-emitting device having enhanced light extraction efficiency'20056,917,159'Microcavity OLED device'20056,905,788'Stabilized OLED device'20056,861,800'Tuned microcavity color OLED display'20056,703,179'Transfer of organic material from a donor to form a layer in an OLED device'20046,693,296'OLED apparatus including a series of OLED devices'20046,688,365'Method for transferring of organic material from a donor to form a layer in an OLED device'20046,605,330'Phase-change recording element for write once applications'20036,544,617'Phase-change recording element for write once applications'20036,497,988'Phase-change recording element for write once applications'20026,365,256'Erasable phase change optical recording elements'20026,224,960'Phase-change recording medium for write once applications'20016,168,901'Recordable optical element using low absorption materials'20016,104,686'Copy protection marks on a transparent layer of an optical disk indicating that the disk has been previously accessed'20006,020,041'Performance recording media for recordable element using gold reflector'20006,007,887'Performance recording media for recordable element using silver reflector'19995,963,536'Copy count protection structure for optical recording medium and method for same'19995,882,760'Recordable optical disks with metallic interlayer'19995,879,773'Recordable optical disks with dielectric interlayer'19995,849,458'Recordable optical device including a barrier layer'19985,843,553'High performance media for optical recording'19985,783,301'Multilayer magnetooptic recording media'19985,750,274'Multilayer magnetooptic recording media'19985,733,623'Recording media for recordable element'19985,693,200'Forming a high performance Co/Pt disk'19975,612,109'Optical storage medium including multiple data levels made of Co/Pt magneto-optic recording media'19975,565,266'Multilayer magnetooptic recording media'19965,563,000'Multilayer magnetooptic recording media'19965,436,072'Multilayer magnetooptic recording media'19955,407,755'Multilayer magnetooptic recording media'19955,271,978'Optical recording media'19935,196,294'Erasable optical recording materials and methods based on tellurium alloys'19935,196,284'Erasable phase change optical recording elements and methods'19935,077,181'Optical recording materials comprising antimony-tin alloys including a third element'19915,051,340'Master for optical element replication'19915,015,548'Erasable phase change optical recording elements and methods'19914,981,772'Optical recording materials comprising antimony-tin alloys including a third element'19914,960,680'Recording elements comprising write-once thin film alloy layers'19904,904,577'Optical recording element and alloy for use therein'19904,865,955'Recording elements comprising write-once thin film alloy layers'19894,812,386'Recording elements comprising write-once thin film alloy layers'19894,812,385'Recording elements comprising write-once thin film alloy layers'19894,798,785'Recording elements comprising write-once thin film alloy layers'19894,797,871'Erasable optical recording method'19894,795,695'Recording elements comprising write-once thin film alloy layers'19894,774,170'Recording elements comprising write-once thin film alloy layers'19884,319,069'Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation'19824,315,096'Integrated array of photovoltaic cells having minimized shorting losses'19824,207,119'Polycrystalline thin film CdS/CdTe photovoltaic cell'1980

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1980–2009Patents assigned to EASTMAN KODAK CO (61)· patent assignee history
1980–2011Based in Webster, NY, US· patent location history
1990–2012Based in Rochester, NY, US· patent location history
2010–2011Patents assigned to GLOBAL OLED TECHNOLOGY LLC (8)· patent assignee history
2011–2012Patents assigned to TYAN YUAN-SHENG (2)· patent assignee history
2012Patents assigned to CUSHMAN THOMAS (1)· patent assignee history
2012Patents assigned to FARRUGGIA GIUSEPPE (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
EASTMAN KODAK CO611980–2009
GLOBAL OLED TECHNOLOGY LLC82010–2011
TYAN YUAN-SHENGself22011–2012
CUSHMAN THOMAS12012
FARRUGGIA GIUSEPPE12012
Locations
LocationPatentsSpan
Webster, New York, US691980–2011
Rochester, New York, US21990–2012