Inventor
Tatsuo Nishita
Inventor
Amagasaki, JP
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
C23CCoating metallic material24%
H10DInorganic electric semiconductor devices22%
H10BElectronic memory devices10%
H01JElectric discharge tubes or discharge lamps5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
G11CStatic stores2%
H05HPlasma technique2%
PatentTitleYear
8,569,186'Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device'20138,366,953'Plasma cleaning method and plasma CVD method'20138,329,596'Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device'20128,318,614'Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus'20128,258,571'MOS semiconductor memory device having charge storage region formed from stack of insulating films'20128,138,103'Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device'20128,119,545'Forming a silicon nitride film by plasma CVD'20128,114,790'Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus'20127,915,177'Method of forming gate insulation film, semiconductor device, and computer recording medium'20117,674,722'Method of forming gate insulating film, semiconductor device and computer recording medium'20107,304,002'Method of oxidizing member to be treated'20077,156,923'Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method'20076,844,273'Precleaning method of precleaning a silicon nitride film forming system'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2013Patents assigned to TOKYO ELECTRON LTD (12)· patent assignee history
2005–2007Based in Esashi, JP· patent location history
2007Based in Tokyo, JP· patent location history
2010–2013Based in Amagasaki, JP· patent location history
2012–2013Patents assigned to KOHNO MASAYUKI (7)· patent assignee history
2012–2013Patents assigned to NAKANISHI TOSHIO (7)· patent assignee history
2012–2013Patents assigned to NISHITA TATSUO (7)· patent assignee history
2012Patents assigned to HIROTA YOSHIHIRO (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 12 | 2005–2013 |
| KOHNO MASAYUKI | 7 | 2012–2013 |
| NAKANISHI TOSHIO | 7 | 2012–2013 |
| NISHITA TATSUOself | 7 | 2012–2013 |
| HIROTA YOSHIHIRO | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Amagasaki, JP | 10 | 2010–2013 |
| Esashi, JP | 2 | 2005–2007 |
| Tokyo, JP | 1 | 2007 |