Inventor
WANDON KIM
Inventor
KR
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
H01LSemiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
B82YSpecific uses or applications of nanostructures16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10BElectronic memory devices2%
PatentTitleYear
12,550,333Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same202612,451,421Semiconductor device with double etch stop layer and method of manufacturing the same202512,444,675Semiconductor devices202512,419,086Semiconductor device and method of fabricating the same202512,354,943Semiconductor device202512,262,558Semiconductor device and method of manufacturing the same202512,243,815Semiconductor device and method of fabricating the same202512,230,682Integrated circuit device202512,218,046Semiconductor device and method of fabricating the same202512,199,163Semiconductor device and method of fabricating the same where semiconductor device includes high-k dielectric layer that does not extend between inhibition layer and side of gate electrode202512,183,742Semiconductor device202412,080,712Semiconductor device202412,062,661Semiconductor device202412,021,027Integrated circuit device having parallel conductive lines with bulging end portion(s) and method of manufacturing the same202411,955,487Semiconductor device202411,955,523Semiconductor device including a gate structure202411,948,994Semiconductor device and method of fabricating the same202411,929,366Semiconductor device202411,888,063Semiconductor device202411,837,645Method of manufacturing a semiconductor device202311,830,874Method of fabricating a semiconductor device202311,804,530Semiconductor device and method of fabricating the same202311,778,835Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same202311,682,706Semiconductor device202311,664,310Semiconductor device and method of fabricating the same202311,631,769Semiconductor device202311,610,975Semiconductor devices having multiple barrier patterns202311,594,604Semiconductor device including a gate structure202311,557,656Semiconductor device having a capping pattern on a gate electrode202311,538,916Semiconductor device202211,417,656Semiconductor device202211,411,106Semiconductor device202211,387,236Semiconductor device202211,374,001Semiconductor device202211,335,701Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same202211,296,078Semiconductor device202211,239,334Semiconductor device202211,233,050Semiconductor device with diffusion barrier in the active contact202211,217,677Semiconductor device and method of fabricating the same202211,145,738Semiconductor devices having multiple barrier patterns2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to SAMSUNG ELECTRONICS CO LTD (40)· patent assignee history
2021–2026Based in KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 40 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 40 | 2021–2026 |