Inventor

George E. Possin

Inventor

Schenectady, NY, US

Overview

1977–2016

Patent span

Electricity

Primary field (CPC H)

Patents· 78 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices19%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation17%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%

G01TMeasurement of nuclear or x-radiation12%

A61BDiagnosis8%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

H04NPictorial communication, e.g. television6%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%

G11CStatic stores4%

G01NInvestigating or analysing materials by determining their chemical or physical properties1%

PatentTitleYear

9,325,913'Radiation detector for use in sequential image acquisition'2016 8,564,086'Apparatus for reducing photodiode thermal gain coefficient'2013 8,409,908'Apparatus for reducing photodiode thermal gain coefficient and method of making same'2013 7,564,125'Electronic array and methods for fabricating same'2009 7,512,210'Hybrid energy discriminating charge integrating CT detector'2009 7,403,590'CT detector photodiode having multiple charge storage devices'2008 7,403,589'Photon counting CT detector using solid-state photomultiplier and scintillator'2008 7,307,301'Imaging array'2007 7,283,609'CT detector photodiode having multiple charge storage devices'2007 7,233,640'CT detector having an optical mask layer'2007 7,145,152'Storage capacitor design for a solid state imager'2006 7,019,304'Solid-state radiation imager with back-side irradiation'2006 7,010,084'Light detector, radiation detector and radiation tomography apparatus'2006 6,982,176'Method for monitoring production of pixel detectors and detectors produced thereby'2006 6,740,884'Imaging array and methods for fabricating same'2004 6,724,010'Solid state imager having gated photodiodes and method for making same'2004 6,707,046'Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination'2004 6,680,216'Method of making imager structure'2004 6,623,161'Method and apparatus for identifying and correcting line artifacts in a solid state X-ray detector'2003 6,621,887'Method and apparatus for processing a fluoroscopic image'2003 6,559,506'Imaging array and methods for fabricating same'2003 6,504,158'Imaging array minimizing leakage currents'2003 6,465,824'Imager structure'2002 6,465,286'Method of fabricating an imager array'2002 6,404,851'Method and apparatus for automatic exposure control using localized capacitive coupling in a matrix-addressed imaging panel'2002 6,396,046'Imager with reduced FET photoresponse and high integrity contact via'2002 6,384,400'High resolution and high luminance scintillator and radiation imager employing the same'2002 6,093,580'Photosensitive imager contact'2000 6,031,234'High resolution radiation imager'2000 5,920,070'Solid state area x-ray detector with adjustable bias'1999 5,859,463'Photosensitive imager contact pad structure'1999 5,838,054'Contact pads for radiation imagers'1998 5,777,355'Radiation imager with discontinuous dielectric'1998 5,736,732'Induced charge prevention in semiconductor imaging devices'1998 5,648,654'Flat panel imaging device with patterned common electrode'1997 5,631,473'Solid state array with supplemental dielectric layer crossover structure'1997 5,616,524'Repair method for low noise metal lines in thin film imager devices'1997 5,610,404'Flat panel imaging device with ground plane electrode'1997 5,610,403'Solid state radiation imager with gate electrode plane shield wires'1997 5,587,591'Solid state fluoroscopic radiation imager with thin film transistor addressable array'1996 5,541,128'Self-aligned thin-film transistor constructed using lift-off technique'1996 5,527,726'Self-aligned thin-film transistor constructed using lift-off technique'1996 5,430,298'CT array with improved photosensor linearity and reduced crosstalk'1995 5,391,507'Lift-off fabrication method for self-aligned thin film transistors'1995 5,384,271'Method for reduction of off-current in thin film transistors'1995 5,362,660'Method of making a thin film transistor structure with improved source/drain contacts'1994 5,340,758'Device self-alignment by propagation of a reference structure\'s topography'1994 5,324,674'Fabrication method for a self-aligned thin film transistor having reduced end leakage and device formed thereby'1994 5,293,417'X-ray collimator'1994 5,281,546'Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface'1994 5,273,920'Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface'1993 5,241,192'Fabrication method for a self-aligned thin film transistor having reduced end leakage and device formed thereby'1993 5,231,655'X-ray collimator'1993 5,210,045'Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays'1993 5,198,694'Thin film transistor structure with improved source/drain contacts'1993 5,198,673'Radiation image detector with optical gain selenium photosensors'1993 5,156,986'Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration'1992 5,148,248'Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays'1992 5,130,263'Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer'1992 5,041,888'Insulator structure for amorphous silicon thin-film transistors'1991 5,010,027'Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure'1991 4,933,296'N.sup.+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays'1990 4,889,411'Process and structure for thin film transistor with aluminum contacts and nonaluminum metallization in liquid crystal displays'1989 4,873,708'Digital radiographic imaging system and method therefor'1989 4,855,806'Thin film transistor with aluminum contacts and nonaluminum metallization'1989 4,778,258'Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays'1988 4,774,207'Method for producing high yield electrical contacts to N+ amorphous silicon'1988 4,704,783'Method for passivating the back channel of amorphous silicon field effect transistors'1987 4,704,623'Doping for low capacitance amorphous silicon field effect transistor'1987 4,686,553'Low capacitance amorphous silicon field effect transistor structure'1987 4,646,424'Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors'1987 4,534,016'Beam addressed memory system'1985 4,212,082'Method for fabrication of improved storage target and target produced thereby'1980 4,197,144'Method for improving writing of information in memory targets'1980 4,128,897'Archival memory media and method for information recording thereon'1978 4,099,261'Method for writing on archival memory target by ion damage'1978 4,064,495'Ion implanted archival memory media and methods for storage of data therein'1977 4,064,558'Method and apparatus for randomizing memory site usage'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–2016Patents assigned to GEN ELECTRIC (75)· patent assignee history

1977–2016Based in Schenectady, NY, US· patent location history

1997–2013Based in Niskayuna, NY, US· patent location history

2002Based in Niskkayuna, NY, US· patent location history

2003–2006Patents assigned to GE MED SYS GLOBAL TECH CO LLC (2)· patent assignee history

2013Patents assigned to LI WEN (1)· patent assignee history

2013Patents assigned to POSSIN GEORGE E (1)· patent assignee history

2016Patents assigned to EBERHARD JEFFREY WAYNE (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
GEN ELECTRIC	75	1977–2016
GE MED SYS GLOBAL TECH CO LLC	2	2003–2006
EBERHARD JEFFREY WAYNE	1	2016
LI WEN	1	2013
POSSIN GEORGE Eself	1	2013

Locations

Location	Patents	Span
Schenectady, New York, US	43	1977–2016
Niskayuna, New York, US	34	1997–2013
Niskkayuna, New York, US	1	2002